CN107733375A - Ultra-wideband low-noise amplifier - Google Patents
Ultra-wideband low-noise amplifier Download PDFInfo
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- CN107733375A CN107733375A CN201711068702.3A CN201711068702A CN107733375A CN 107733375 A CN107733375 A CN 107733375A CN 201711068702 A CN201711068702 A CN 201711068702A CN 107733375 A CN107733375 A CN 107733375A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
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Abstract
The invention discloses a kind of ultra-wideband low-noise amplifier, mainly solves the problems, such as prior art noise and linearity poor-performing.It uses two-stage cascade structure, and is coupled between two-stage using electric capacity C3.The second level amplifying circuit uses the basic common-source circuits of peak value structure in parallel；Connection forms series circuit by feedback metal-oxide-semiconductor M3 and feedback coupled capacitor C2 between the input and output of the first order amplifying circuit, to provide the matching in broadband and improve the linearity, feedback metal-oxide-semiconductor M3 source electrode is connected with biasing metal-oxide-semiconductor M4, to provide bias current for feedback metal-oxide-semiconductor M3；Auxiliary trsanscondutance amplifier G is connected between first order input amplifier and second level amplification circuit output end.The present invention can partly or entirely eliminate the noise as caused by part component in first order amplifying circuit, improve the overall noiseproof feature of ultra-wideband low-noise amplifier, the radio communication available for ultra wide band.
Description
Technical field
The present invention relates to wireless communication technology field, more specifically to a kind of ultra-wideband low-noise amplifier, mainly
For super broad band radio communication.
Background technology
Ultra-wideband low-noise amplifier is responsible for receive on antenna generally as first module of ultra-wide band radio-frequency front end
The small-signal power amplification arrived uses for late-class circuit, while need to introduce less noise power, and its performance is to whole system
Performance have important influence.The signal received on antenna is generally the signal through ovennodulation, and signal frequency is in radio frequency or microwave
In the range of, pass through the theoretical degree of reflection for understanding input signal of high-frequency circuit and antenna and low-noise amplifier input impedance
Matching degree has close relationship, i.e.,：
Γ represents the reflectance factor of incoming signal in formula, and Rin represents the input impedance of low-noise amplifier, Rs representative antennas
Characteristic impedance.
Because the reflection between antenna and low-noise amplifier can cause signal power losses, can be damaged under serious situation
Bad signal declines communication quality.In order to solve this problem, general method is added between the grid of amplifier tube and drain electrode
Enter negative feedback resistor, the impedance for making to see from amplifier in has suitable real component, then the side for passing through impedance matching
Formula is transformed into 50 ohm, or the amplification mode using common gate.But consequently, it is possible to matching network can be made using negative feedback resistor
Complicate, need addition inductance, electric capacity etc. passive to all obtain approximate 50 ohm input impedance in whole communication band
Element, chip area is sacrificed, and can not further improve the linearity, can then limit single-stage using common gate input matching puts
Big device gain and noiseproof feature, for simple common-gird circuit, when input is realized and matched the noise coefficient of amplifier >=
3dB。
From the Noise Theory cascaded, most prime is that the noise coefficient of low-noise amplifier rises to the overall noise of system
Decisive role, because amplification of the noise Jing Guo reception chain entire gain eventually appears in output end, and other parts
Noise amplifies merely through the gain of reception chain part of module.So further reduce making an uproar for low-noise amplifier by technological means
Sound is contributed, largely effective to the overall performance of raising reception chain.At the same time, the gain of low-noise amplifier is sufficiently high, with
The influence of noise equivalent to the input of rear class is set to reduce as far as possible；Gain-frequency characteristic is sufficiently flat, believes time domain
Number distortion level reduce as far as possible.
As wireless communication system becomes more popular, whole communication environment is caused to become extremely noisy, antenna is connecing
Other noises or communication signal in passband are also have received while receiving useful signal, can shadow if the interference is sufficiently large
The normal operating conditions to low-noise amplifier is rung, is allowed to lose the amplifying power to useful signal.Another common situation：
Consider the situation that transmitting path passes through duplexer common antenna with receiving path, it is assumed that the signal power for needing to receive is in -80dBm
Left and right, the power output of transmitting terminal power amplifier is 30dBm, and the emission port of duplexer and the isolation characteristic of receiving port are 50dBm,
This will imply that the power of transmitting has -20dBm to leak into input, and it is input to low-noise amplifier jointly with useful signal,
Because the leakage power of transmission signal is larger so that low-noise amplifier is in the state of gain compression, and useful signal can not be by
Effectively amplification.Simultaneously because the wide bandwidth characteristic of ultra-wideband communication system, its total signal power received is in whole frequency band
The integration of signal power so that influence of this non-linear phenomena to ultra-wideband communication system is stronger.In low noise amplification
In the design process of device, negative-feedback is to improve the effective ways of the linearity, but this is to sacrifice gain as cost, while causes low noise
The deterioration of acoustic amplifier and the noise coefficient of system entirety.
The content of the invention
It is an object of the invention to provide a kind of ultra wide band low noise amplifier circuit structure, with to matching performance, noise,
Strong tradeoff is weakened between gain and the linearity, in the situation that holding gain characteristic and matching performance are constant
Lower raising noise characteristic and the linearity.
The present invention technical thought be：In view of the tradeoff between matching, gain, noise and the linearity, rational choosing
The circuit structure of low noise amplifier circuit is selected out, the parameter value of appropriate setting circuit components, is realizing the same of matching performance
When introduce less noise, and improve the noise and the linearity of circuit by circuit structure, to meet communication system to low noise
The requirement of the various performance parameters of amplifier, improve the overall performance of reception chain.
According to above-mentioned thinking, ultra-wideband low-noise amplifier of the invention, including a kind of ultra-wideband low-noise amplifier, adopt
With two-stage cascade structure, first order amplifying circuit includes the basic common-source circuits using resistance as load, and the second level is using in parallel
The basic common-source circuits of peak value structure, including the second amplifier tube M2, the second biasing resistor R3, the second load resistance R4 and parallel connection
Peak value inductance L1, signal utilizes Capacitance Coupled between two-stage, it is characterised in that：
First order amplifying circuit, including the feedback metal-oxide-semiconductor M3 of the first amplifier tube M1, diode connection, biasing metal-oxide-semiconductor M4,
First biasing resistor R1, the first load resistance R2, the 3rd biasing resistor R5 and feedback coupled capacitor C2, feedback metal-oxide-semiconductor M3 and anti-
Coupled capacitor C2 composition series circuits are presented, are connected between the first amplifier tube M1 grid and drain electrode, to provide in broadband
Match somebody with somebody and improve the linearity, feedback metal-oxide-semiconductor M3 source electrode is connected with biasing metal-oxide-semiconductor M4 drain electrode, biasing metal-oxide-semiconductor M4 source electrode connection
To ground, to provide bias current for feedback metal-oxide-semiconductor M3；
Auxiliary trsanscondutance amplifier G is connected between first amplifier tube M1 grid and the second amplifier tube M2 drain electrode, is used for
Partly or entirely eliminate by the first amplifier tube M1, biasing metal-oxide-semiconductor M4 and the first load resistance R2 noise, improve ultra wide band low noise
The overall noiseproof feature of acoustic amplifier.
Preferably, the feedback metal-oxide-semiconductor M3 uses NMOS tube.
Preferably, the feedback metal-oxide-semiconductor M3, biasing metal-oxide-semiconductor M4 and the first amplifier tube M1 channel length, are used
Minimum dimension specified in CMOS production technologies, to reduce parasitic capacitance, improve frequency characteristic and matching performance.
Preferably, the grid of the biasing metal-oxide-semiconductor M4 is connected to the bias voltage of current source by the 3rd biasing resistor R5
Vb2, for reducing influence of the biasing metal-oxide-semiconductor M4 gate-drain parasitic capacitances to input matching.
Preferably, the grid of the first amplifier tube M1 connects the first biasing resistor R1 one end, the R1 other end connects
It is connected to the bias voltage vb1 of first order amplifying circuit；First amplifier tube M1 the first load resistance R2 of drain electrode connection one end, R2
The other end be connected to power supply vdd；First amplifier tube M1 source ground.
Preferably, the grid of the second amplifier tube M2 connects the second biasing resistor R3 one end, R3 another termination
Second amplifying circuit bias voltage vb3；Second amplifier tube M2 drain electrode connects the second load resistance R4 one end, R4 another termination
Peak value inductance L1 in parallel one end, L1 another termination power vdd；Second amplifier tube M2 source ground.
The present invention has the following advantages that relative to prior art：
1. the present invention is on the premise of good matching and gain characteristic is maintained, due to the non-of feedback metal-oxide-semiconductor M3
Linear characteristic further improves the overall linearity；
2. the present invention due between the drain electrode in the first amplifier tube M1 grids and the second amplifier tube M2 bridging have auxiliary across
Amplifier G is led, the first amplifier tube M1, the first load resistance R2 is reduced and biases metal-oxide-semiconductor M4 noise contribution, improve noise
Performance.
Brief description of the drawings
Fig. 1 is the circuit block diagram of the present invention；
Fig. 2 is the circuit structure diagram of embodiments of the invention；
Fig. 3 is that obtained input matching performance figure is emulated to the embodiment of the present invention；
Fig. 4 is that obtained noise characteristic figure is emulated to the embodiment of the present invention；
Fig. 5 is that obtained third order intermodulation performance plot is emulated to the embodiment of the present invention；
Fig. 6 is that obtained gain characteristic curve is emulated to the embodiment of the present invention.
Embodiment
Below with reference to accompanying drawing, to the preferred embodiments of the present invention progress structure and the detailed description of effect, it will be appreciated that
Preferred embodiment is just to illustrate the present invention, the protection domain that should not be construed as limiting the invention.
Reference picture 1, a preferred embodiment of ultra-wideband low-noise amplifier of the present invention, mainly by first order amplifying circuit
A1, the second level amplifying circuit A2 and booster amplifier G are formed, and wherein Vs and Rs are respectively driving source and internal resistance.Signal is through input
Capacitance C1 enters first order amplifying circuit A1 and carries out first order amplification, and A1 output signal is through blocking condenser C3 couplings
Close to second level amplifying circuit A2 and carry out second level amplification, the signal being exaggerated through the second level is defeated through exporting capacitance C4 again
Go out.It may be such that the entire gain of ultra-wideband low-noise amplifier more easily reachs the numerical value of requirement by the amplification of this two-stage, and the
One-level amplifying circuit A1 feedback metal-oxide-semiconductor M3 can provide 50 ohm of input resistance component, and then realize good input
Match somebody with somebody；It can offset outlet end part of the first order amplifying circuit A1 noise in the second level by booster amplifier G, and then improve
The noiseproof feature of the present invention.
Reference picture 2, first order amplifying circuit A1 includes the basic common-source circuits using resistance as load, by the first amplifier tube
M1, the feedback metal-oxide-semiconductor M3 of diode connection, biasing metal-oxide-semiconductor M4, the first biasing resistor R1, the first load resistance R2, the 3rd biasing
Resistance R5 and feedback coupled capacitor C2 compositions.First amplifier tube M1 source ground, drain electrode connect the first load resistance R2 one end,
First load resistance R2 another termination power vdd, the first amplifier tube M1 grid connect the first biasing resistor R1 one end, the
One biasing resistor R1 other end connection first order amplifying circuit bias voltage vb1, feedback metal-oxide-semiconductor M3 grid and drain electrode are short
Connect, be connected to the first amplifier tube M1 drain electrode, feedback metal-oxide-semiconductor M3 source electrode connection feedback coupled capacitor C2 one end, C2's is another
One end is connected to the first amplifier tube M1 grid, for providing broadband input matching and improving the linearity, feedback metal-oxide-semiconductor M3 source
Pole is connected to biasing metal-oxide-semiconductor M4 drain electrode, biasing metal-oxide-semiconductor M4 source ground, and grid connects the 3rd biasing resistor R5 one end,
The 3rd biasing resistor R5 other end is connected to the bias voltage vb2 of current source, for reducing biasing metal-oxide-semiconductor M4 gate-drain parasitic
Influence of the electric capacity to input matching.
Second level amplifying circuit A2, using the basic common-source circuits of peak value structure in parallel, including the second amplifier tube M2,
Two biasing resistor R3, the second load resistance R4 and peak value inductance L1 in parallel.Second amplifier tube M2 grid connects the second biasing resistor
R3 one end, the second biasing resistor R3 other end connection second level amplifying circuit bias voltage vb3, the second amplifier tube M2 source
Pole is grounded, and drain electrode connects the second load resistance R4 one end, and the R4 other end connects peak value inductance L1 in parallel one end, and L1's is another
Power supply vdd is connected to, for lifting high-frequency gain.
Connection auxiliary trsanscondutance amplifier G between first amplifier tube M1 grid and the second amplifier tube M2 drain electrode, for portion
Divide or all eliminate by the first amplifier tube M1, biasing metal-oxide-semiconductor M4 and the first load resistance R2 noise, improve superwide band low noise
The overall noiseproof feature of amplifier.
Input signal Si, first order amplifying circuit A1, use electric capacity between the second level amplifying circuit A2 and output signal So
Coupling.More specifically, the first amplifier tube M1 grid connection input capacitance C1 one end, input signal is by inputting blocking
Electric capacity C1 other end input；First amplifier tube M1 drain electrode connects level connection coupled capacitor C3 one end, and the C3 other ends are connected to
Second amplifier tube M2 grid；Second amplifier tube M2 drain electrode connects output capacitance C4 one end, amplified signal by
Export capacitance C4 other end output, cocurrent is to next stage.
The principle of the present invention and performance evaluation：
1. input the theory analysis of matching
In first order amplifying circuit A1, the signal voltage transitions of input are signal code by the first amplifier tube M1, and signal is electric
The equivalent output impedance that stream flows through A1 produces pressure drop, feeds back metal-oxide-semiconductor M3, realizes from M1 drain electrode to the voltage-to-current of M1 grids
Feedback, M4 occur as current source, and suitable bias current is provided for M3.
In the case of low frequency small-signal, ignore the influence of parasitic factor and can obtain the real part of input impedance and be：
R in above formulainFor low-noise amplifier input resistance component, gM1、gM3Respectively the first amplifier tube M1 and feedback MOS
Pipe M3 small-signal transconductance.
As can be seen from the above equation, by adjusting gM1、gM3Input resistance R can be obtained with R2 sizeinFor 50 ohm.It is logical
The channel length for crossing setting M1, M3 and M4 is minimum dimension as defined in CMOS production technologies, can minimize input and post
The influence of raw electric capacity, reaches the purpose with antenna matched well, and optimization frequency characteristic, this uses NMOS tube for M3, because
For for identical gM3, NMOS has smaller size relative to PMOS, and minimum channel length is 0.18um in the present embodiment.
Fig. 3 shows the input matching properties of the ultra-wideband low-noise amplifier of the embodiment, as can be seen from Figure 3 should
The reflectance factor S11 of embodiment is less than -10dB in 500MHz-5GHz frequency ranges, realizes good matching.
2. the analysis that noiseproof feature improves
The present invention uses trsanscondutance amplifier G in structure, introduces noise cancellation path, passes through noise analysis：M1 is produced
Raw noise current flows through the equivalent output impedance of first order amplifying circuit, A points in fig. 2 and B point polarization identicals
The noise voltage of noise voltage, wherein A point is converted to M2 drain current by the amplification of second level amplifying circuit, and B points are made an uproar
Psophometric voltage produces G output current by auxiliary trsanscondutance amplifier G amplification, and this drain electrode of two-way noise current in M2 is stacked
Add.Because G mutual conductance and the mutual conductance of second level amplifying circuit have opposite symbol, therefore reasonable selection auxiliary trsanscondutance amplifier
G gain offsets can then just two-way noise current, i.e., eliminated in the output end of low-noise amplifier as caused by M1
Noise current.Under conditions of M1 noise current is completely eliminated, made an uproar as caused by the first load resistance R2, biasing metal-oxide-semiconductor M4
Sound also obtains different degrees of counteracting.
With the analysis result to noise on the contrary, being input to signal voltage the putting by two-stage commonsource amplifier of M1 grids
Greatly, the output signal with input signal identical polar has been obtained；Input signal is amplified by auxiliary trsanscondutance amplifier, equally
The output signal of same polarity has been obtained, i.e., has been strengthened in output end signal voltage.
By using auxiliary trsanscondutance amplifier, the first amplifier tube M1, the first load resistance R2 and biasing metal-oxide-semiconductor M4 are weakened
Noise, strengthen output signal voltage, the influence of these two aspects causes the ultra-wideband low-noise amplifier to obtain well
Noise characteristic.
Fig. 4 shows the curve that the noise characteristic of the present embodiment changes with frequency, it can be seen that in the whole of 500MHz-5GHz
Individual inband noise coefficient NF is less than 3dB, has obtained good noiseproof feature.
3. the theory analysis that the linearity improves
Using feedback networks of the feedback metal-oxide-semiconductor M3 as first order amplifying circuit, except the factor that considers to match due also to
It can do pre-distortion to the big signal of input so that the overall linearity of two-stage circuit has been lifted.
According to Fig. 1, under large-signal conditions, the principle for improving the linearity as feedback network to feedback metal-oxide-semiconductor is done
It is explained further.
In Fig. 1 amplifier A0 gain it is sufficiently large, feedback metal-oxide-semiconductor M3 there is preferable square law characteristic under conditions of,
It can draw from input source Vs to intermediate node C voltage gain and be：
V in formulaCFor the big signal voltage of output of C points in Fig. 1, K=0.5 μnCoxW/L, for feed back metal-oxide-semiconductor M3 technique and
Dimensional parameters, VTHFor M3 threshold voltage.Due to input voltage Vs sheets as negative value so occurring negative sign inside radical sign.
As can be seen that the output voltage Vc and input voltage Vs of C points are in square root relationship from above formula, i.e., A1 is to input
Big signal has carried out pre-distortion.Circuit A2 in the second level uses common source configuration, therefore second level amplifying circuit in embodiment
Input and output voltage characteristic be square law characteristic, the signal voltage of predistortion is coupled to the second level by blocking condenser C3
Amplifying circuit M2 grid, the output signal voltage with good linearity is obtained by the amplification of A2 square law characteristics.
Fig. 5 shows the linearity simulation result of embodiment.In 2GHz test frequencies, output third order intermodulation point is reachable
12.24dBm, the linearity are improved.
4. the theory analysis that high-frequency gain is kept
In the amplifying circuit A2 of the second level, A2 is used as with connecting for peak value inductance inductance L1 in parallel by the use of the second load resistance R4
Overall load.It is assumed here that load capacitance is expressed as CLAnd ignore the parasitic factor of pipe, it can deduce by Circuit theory
The small-signal gain that second amplifying circuit drains from M2 grid to M2 is：
A in above formulavFor second level amplifying circuit voltage gain, gM2For the second amplifier tube M2 mutual conductance.
As can be seen from the above equation, in the amplifying circuit of the second level, as a result of resistance, inductance series load, its frequency
A zero point-R4/L1 in characteristic be present, regulation R4 and L1 value can adjust the position of zero point, go to offset the one of amplifier
Individual limit, the entire gain of the ultra-wideband low-noise amplifier is set still to keep higher level in high frequency.
Fig. 6 show the gain simulation result of the embodiment of the present invention, when frequency increases to 5GHz from 500MHz, gain from
Gradually rise up to be more than 20dB less than 19dB, it can be seen that the presence of zero point makes gain raise with the increase of frequency.
The above-mentioned realization principle for the present invention, as previously described, it should be understood that the present invention is not limited to disclosed form,
Those skilled in the art does not depart from protection scope of the present invention based on the design that the present invention is proposed by limited reasoning from logic.
Claims (6)
1. a kind of ultra-wideband low-noise amplifier, using two-stage cascade structure, it is negative that first order amplifying circuit A1, which is included using resistance,
The basic common-source circuits carried, second level amplifying circuit A2 use the basic common-source circuits of peak value structure in parallel, including second
Amplifier tube M2, the second biasing resistor R3, the second load resistance R4 and peak value inductance L1 in parallel, signal utilizes electric capacity coupling between two-stage
Close, it is characterised in that：
First order amplifying circuit A1, including the feedback metal-oxide-semiconductor M3 of the first amplifier tube M1, diode connection, biasing metal-oxide-semiconductor M4, the
One biasing resistor R1, the first load resistance R2, the 3rd biasing resistor R5 and feedback coupled capacitor C2, feed back metal-oxide-semiconductor M3 and feedback
Coupled capacitor C2 forms series circuit, is connected between the first amplifier tube M1 grid and drain electrode, to provide the matching in broadband
With the raising linearity, feedback metal-oxide-semiconductor M3 source electrode is connected with biasing metal-oxide-semiconductor M4 drain electrode, and biasing metal-oxide-semiconductor M4 source electrode is connected to
Ground, to provide bias current for feedback metal-oxide-semiconductor M3；
Auxiliary trsanscondutance amplifier G is connected between first amplifier tube M1 grid and the second amplifier tube M2 drain electrode, for part
Or all eliminate by the first amplifier tube M1, biasing metal-oxide-semiconductor M4 and the first load resistance R2 noise, improve superwide band low noise and put
The overall noiseproof feature of big device.
2. ultra-wideband low-noise amplifier as claimed in claim 1, it is characterised in that feedback metal-oxide-semiconductor M3 uses NMOS tube.
3. ultra-wideband low-noise amplifier as claimed in claim 1, it is characterised in that feedback metal-oxide-semiconductor M3, biasing metal-oxide-semiconductor M4 and
First amplifier tube M1 channel length, using minimum dimension specified in CMOS production technologies, to reduce parasitic capacitance, improve
Frequency characteristic and matching performance.
4. ultra-wideband low-noise amplifier as claimed in claim 1, it is characterised in that biasing metal-oxide-semiconductor M4 grid passes through the 3rd
Biasing resistor R5 is connected to the bias voltage vb2 of current source, and input is matched for reducing biasing metal-oxide-semiconductor M4 gate-drain parasitic capacitances
Influence.
5. ultra-wideband low-noise amplifier as claimed in claim 1, it is characterised in that the first amplifier tube M1 grid connection the
One biasing resistor R1 one end, the R1 other end are connected to the bias voltage vb1 of first order amplifying circuit；First amplifier tube M1's
The first load resistance R2 of drain electrode connection one end, the R2 other end are connected to power supply vdd；First amplifier tube M1 source ground.
6. ultra-wideband low-noise amplifier as claimed in claim 1, it is characterised in that the second amplifier tube M2 grid connects second
Biasing resistor R3 one end, R3 another termination second level amplifying circuit bias voltage vb3；Second amplifier tube M2 drain electrode connects
Two load resistance R4 one end, R4 another termination parallel connection peak value inductance L1 one end, L1 another termination power vdd；Second
Amplifier tube M2 source ground.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108736967A (en) * | 2018-05-11 | 2018-11-02 | 思力科（深圳）电子科技有限公司 | Infrared receiver chip circuit and infrared receiver system |
| CN110190816A (en) * | 2019-04-17 | 2019-08-30 | 西安电子科技大学 | A kind of self feed back low-noise amplifier applied to biopotential processing |
| CN110708021A (en) * | 2019-09-30 | 2020-01-17 | 西安电子科技大学 | High-linearity differential double-feedback low-noise amplifier |
| GB2576417A (en) * | 2018-07-06 | 2020-02-19 | Skyworks Solutions Inc | Amplifier linearity boost circuits and methods for post distortion feedback cancellation |
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