CN108736967A - Infrared receiver chip circuit and infrared receiver system - Google Patents
Infrared receiver chip circuit and infrared receiver system Download PDFInfo
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- CN108736967A CN108736967A CN201810446400.3A CN201810446400A CN108736967A CN 108736967 A CN108736967 A CN 108736967A CN 201810446400 A CN201810446400 A CN 201810446400A CN 108736967 A CN108736967 A CN 108736967A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
- H04B10/112—Line-of-sight transmission over an extended range
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/693—Arrangements for optimizing the preamplifier in the receiver
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/697—Arrangements for reducing noise and distortion
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
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Abstract
The present invention provides a kind of infrared receiver chip circuits, including infrared induction diode and chip interior system；The chip interior system includes the input terminal being sequentially connected electrically, reflection of electromagnetic wave unit, prime amplifier, gain variable amplifier, bandpass filter, comparator, integrator, Schmidt trigger, the first transistor, output end and the automatic gain control unit being connected between the output of the comparator and the input of the gain variable amplifier；The gate terminal of the first transistor is connected to the output of the Schmidt trigger, and source terminal is connected to ground terminal, and drain electrode is connected to the output end and the drain electrode of the first transistor is connected to power end by the piezoresistance of series connection one.The present invention also provides a kind of infrared receiver systems including the infrared receiver chip circuit.Compared with the relevant technologies, infrared receiver chip circuit of the invention and infrared receiver system rejection to disturbance be strong, good reliability and accuracy are high.
Description
Technical field
The present invention relates to chip technology field more particularly to a kind of infrared receiver chip circuit and infrared receiver systems
System.
Background technology
With the development of information age, various wireless telecommunications become mainstream.Infrared receiver chip circuit be wherein without
The major part that signal receives in line communication.
It is to read comparator by automatic growth control module to export in the infrared receiver chip circuit of the relevant technologies
Digital signal simultaneously determines whether noise or useful signal.The infrared receiver chip circuit is in external interference signal intensity ratio
When weaker, especially Electromagnetic Interference, interference signal will not generate larger wave distortion in the infrared receiver chip
In the case of, the bandpass filter of the infrared receiver chip interior can effectively filter out most interference signal.
But when external interference signals intensity is stronger, leading to signal, portion's amplifier chain road waveforms amplitude is excessive in the chip,
Lead to wave distortion.And wave distortion will produce harmonic wave low frequency component, part low frequency component can be fallen in the infrared receiver core
In the bandpass range of piece circuit, and then cause the output end of the infrared receiver chip circuit noise occur and accidentally export, increases letter
Number transmission error rates.
Therefore, it is really necessary to provide a kind of new infrared receiver chip circuit and infrared receiver system to solve above-mentioned ask
Topic.
Invention content
For the above the deficiencies in the prior art, the present invention proposes a kind of strong anti-interference performance, good reliability and accuracy rate height
Infrared receiver chip circuit and infrared receiver system.
In order to solve the above technical problem, the present invention provides a kind of infrared receiver chip circuits, including：
Infrared induction diode for receiving infrared-ray carrier signal and is converted into multi-carrier telecommunication number；And core
Piece built-in system, for the multi-carrier telecommunication number to be carried out Signal optimum processing and is exported；
The chip interior system includes：
Input terminal, for receiving the multi-carrier telecommunication number；
Reflection of electromagnetic wave unit, for receiving the multi-carrier telecommunication number, and it is dry to carry out electromagnetic wave to the multi-carrier telecommunication number
Disturb signal reflex processing；
Prime amplifier, for being carried out at pre-amplification to the multi-carrier telecommunication number after the reflection of electromagnetic wave cell processing
Reason；
Gain variable amplifier, for treated that the multi-carrier telecommunication number is amplified place through the prime amplifier
Reason；
Bandpass filter, for treated that the multi-carrier telecommunication number is filtered place through the gain variable amplifier
Reason；
Comparator, for treated that the multi-carrier telecommunication number carries out at digital signal conversion through the bandpass filter
Reason；
Automatic gain control unit, for judging that treated whether the multi-carrier telecommunication number is interference through the comparator
Noise simultaneously feeds back to the gain variable amplifier, and the gain to control the gain variable amplifier exports；
Integrator, for will treated that the multi-carrier telecommunication number carries out reduction treatment through the comparator；
Schmidt trigger, for treated that the multi-carrier telecommunication number carries out integer processing through the integrator；
The first transistor, for treated that the multi-carrier telecommunication number is amplified and goes out through the Schmidt trigger
It is defeated；And
Output end；
The gate terminal of the first transistor is connected to the output of the Schmidt trigger, the source of the first transistor
Extreme to be connected to ground terminal, the drain electrode of the first transistor is connected to the output end and the drain electrode of the first transistor is logical
It crosses the piezoresistance excessively of series connection one and is connected to power end.
Preferably, the reflection of electromagnetic wave unit includes first resistor, second resistance, 3rd resistor, the 4th resistance, the 5th
Resistance, the 6th resistance, the 7th resistance, the first capacitance, the second capacitance, third capacitance, the 4th capacitance, the 5th capacitance and second are brilliant
Body pipe；
The first end of the first resistor is connected to the output of the infrared induction diode, and the of the first resistor
Two ends are respectively connected to the first end of the first end and the 3rd resistor of the second resistance；
The second end of the second resistance is respectively connected to the first end of the first end and the second capacitance of the 5th resistance；
The second end of the 3rd resistor be respectively connected to the first end of the 4th resistance, the 6th resistance first
The first end of end and first capacitance；
The second end of 4th resistance is connected to the source terminal of the second transistor；
The second end of 5th resistance be respectively connected to the second end of the 7th resistance, first capacitance second
It holds, the first end of the second end of the third capacitance and the 5th capacitance；
The second end of 6th resistance be separately connected the first end of the 7th resistance, second capacitance second
End, the first end of the third capacitance, the first end of the 4th capacitance；
The second end of 4th capacitance is connected to the positive input terminal of the prime amplifier, the second end of the 5th capacitance
It is connected to the negative input end of the prime amplifier；
The drain electrode end of the second transistor is connected to power end, and the gate terminal of the second transistor is connected to described
The drain electrode end of two-transistor.
Preferably, the first transistor and the second transistor are NMOS transistor.
Preferably, the infrared receiver chip circuit further includes that gain inhibits unit, the gain to inhibit unit connection
Between the gain variable amplifier and the bandpass filter, for will be through the gain variable amplifier treated institute
It states multi-carrier telecommunication number and carries out wave distortion gain inhibition processing.
Preferably, it includes the 8th resistance, the 6th capacitance, third transistor, the 4th transistor, that the gain, which inhibits unit,
Five transistors, the 6th transistor and the 7th transistor；
The source electrode of the source terminal of the third transistor, the source terminal of the 6th transistor and the 7th transistor
End is respectively connected to the positive output end of the gain variable amplifier；
The source terminal of 4th transistor, the source terminal of the 5th transistor, the source terminal of the 7th transistor
And the negative terminal of the 6th capacitance is respectively connected to the negative output terminal of the gain variable amplifier；
The gate terminal of the third transistor is respectively connected to the drain electrode end of the third transistor, the 6th transistor
Gate terminal, the gate terminal of the drain electrode end of the 4th transistor, the 4th transistor；
The drain electrode end of 6th transistor is respectively connected to the gate terminal of the 5th transistor, the 5th transistor
Drain electrode end and the 8th resistance first end；
The second end of 8th resistance is respectively connected to the positive terminal of the 6th capacitance and the 7th transistor
Gate terminal；
The source terminal of 7th transistor and the drain electrode end of the 7th transistor are respectively connected to the bandpass filtering
The input of device.
Preferably, the third transistor and the 6th transistor are PMOS transistor；4th transistor, institute
It is NMOS transistor to state the 5th transistor and the 7th transistor.
The present invention also provides a kind of infrared receiver systems, including above-mentioned infrared receiver chip electricity provided by the invention
Road.
Compared with the relevant technologies, infrared receiver chip circuit of the invention and infrared receiver system pass through described pre-
Reflection of electromagnetic wave unit is added in the front end of amplifier, receives the multi-carrier telecommunication number by the reflection of electromagnetic wave unit and to institute
It states multi-carrier telecommunication number and carries out Electromagnetic Interference signal reflex processing, be effectively reflected into the infrared receiver chip circuit
Electromagnetic Interference signal, and then avoid the output of the infrared receiver chip circuit due to external electromagnetic waves signal interference
The problem of output error signal, improves the infrared receiver chip circuit and the anti-interference ability of infrared receiver system,
Especially anti-electromagnetic wave interference performance, and then increase its reliability and accuracy.In addition, the infrared receiver chip circuit
The gain is also added between the gain variable amplifier and the bandpass filter and inhibits unit, and being used for will be through the increasing
Treated that the multi-carrier telecommunication number carries out wave distortion gain inhibition processing for beneficial variable amplifier, improves institute from another point of view
Infrared receiver chip circuit and the anti-interference ability of infrared receiver system are stated, especially anti-WIFI interference performances, further
Improve the infrared receiver chip circuit and the Synthetic Anti-jamming and reliability of infrared receiver system.
Description of the drawings
The invention will now be described in detail with reference to the accompanying drawings.By being described in detail made by conjunction with the following drawings, of the invention is upper
It states or otherwise content will be apparent and be easier to understand.In attached drawing：
Fig. 1 is the structure diagram of infrared receiver chip circuit of the present invention；
Fig. 2 is the circuit structure diagram of reflection of electromagnetic wave unit in Fig. 1；
Fig. 3 is the circuit structure diagram that gain inhibits unit in Fig. 1.
Specific implementation mode
The specific implementation mode that the invention will now be described in detail with reference to the accompanying drawings.
Specific implementation mode/the embodiment recorded herein is the specific specific implementation mode of the present invention, for illustrating this
The design of invention is explanatory and illustrative, should not be construed as the limitation to embodiment of the present invention and the scope of the invention.
In addition to the embodiment recorded herein, those skilled in the art can also be based on disclosed in the application claims and specification
For content using obvious other technical solutions, these technical solutions include taking the post as using the embodiment to recording herein
The technical solution of what obvious substitutions and modifications, all within protection scope of the present invention.
It please join shown in Fig. 1, the present invention provides a kind of infrared receiver chip circuits 100, and the present invention provides a kind of red
Outside line receiving chip circuit 100, including infrared induction diode 1 and the core that is electrically connected with the infrared induction diode 1
Piece built-in system 2.
The infrared induction diode 1 is for receiving infrared-ray carrier signal and is converted into multi-carrier telecommunication number.Institute
Chip interior system 2 is stated for the multi-carrier telecommunication number to be carried out Signal optimum processing and is exported.
Specifically, the chip interior system 2 include the input terminal IN being sequentially connected electrically, it is reflection of electromagnetic wave unit 21, pre-
Amplifier (Pre-amplifier, Pre-amp) 22, gain variable amplifier (variable gain amplifier, VGA)
23, gain inhibits unit 24, bandpass filter (band pass filter, BPF) 25, comparator (Comparator) 26, product
Divide device (Integrator) 27, Schmidt trigger (Schmitt trigger) 28, the first transistor M1, output end OUT, with
And it is connected to the automatic gain control unit between the output of the comparator 26 and the input of the gain variable amplifier 23
(Automatic gain control, AGC) 29.
The gate terminal of the first transistor M1 is connected to the output of the Schmidt trigger 28, the first transistor
The drain electrode that the source terminal of M1 is connected to ground terminal GND, the first transistor M1 is connected to the output end OUT and described first
The drain electrode of transistor M1 crosses piezoresistance R by series connection one and is connected to power end VDD.
It should be noted that the input terminal IN, the prime amplifier 22, the gain variable amplifier 23, the band
It is bandpass filter 25, the comparator 26, the integrator 27, the Schmidt trigger 28, the first transistor M1, described
The signal that the infrared receiver chip circuit 100 can be realized in output end OUT and the automatic gain control unit 29 connects
Receipts and emission function.And it is described infrared in order to effectively improve that the reflection of electromagnetic wave unit 21 and the gain, which inhibit unit 24,
The anti-interference ability of line receiving chip circuit 100 keeps its reliability more excellent, accuracy higher.
Wherein, the reflection of electromagnetic wave unit 21 can reflect most of interference signal, especially Electromagnetic Interference signal；And
The gain inhibits unit 24 that can then filter out most of interference signal and inhibits the amplification output of part interference signal, especially
It is to filter out WIFI interference signals.
That is, in the infrared receiver chip circuit 100 of the present invention, in order to realize that its anti-interference ability and signal are accurate
True property can only add the reflection of electromagnetic wave unit 21 or only add the gain inhibition unit 24, or add institute simultaneously
It states reflection of electromagnetic wave unit 21 and the gain inhibits unit 24, these three schemes that can solve the technology that the present invention refers to and ask
Topic.
In present embodiment, for adding the reflection of electromagnetic wave unit 21 and the gain simultaneously and inhibit unit 24 into
Row is described in detail.
1 receiving infrared-ray carrier signal of the infrared induction diode is simultaneously converted into multi-carrier telecommunication number.It is described defeated
Enter to hold IN to receive the multi-carrier telecommunication number and be delivered to the reflection of electromagnetic wave unit 21, the reflection of electromagnetic wave unit 21 receives
After the multi-carrier telecommunication number, and Electromagnetic Interference signal reflex processing is carried out to the multi-carrier telecommunication number.
Incorporated by reference to ginseng Fig. 2 shown in, specifically, the reflection of electromagnetic wave unit 21 include first resistor R1, second resistance R2,
3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the first capacitance C1, the second capacitance C2,
Third capacitance C3, the 4th capacitance C4, the 5th capacitance C5 and second transistor M2.
The first end of the first resistor R1 is connected to the output of the infrared induction diode 1, the first resistor
The second end of R1 is respectively connected to the first end of the first end and the 3rd resistor R3 of the second resistance R2；Second electricity
The second end of resistance R2 is respectively connected to the first end of the first end and the second capacitance C2 of the 5th resistance R5；The 3rd resistor
The second end of R3 is respectively connected to the first end of the 4th resistance R4, the first end and described first of the 6th resistance R6
The first end of capacitance C1；The second end of the 4th resistance R4 is connected to the source terminal of the second transistor M2；Described 5th
The second end of resistance R5 is respectively connected to the second end of the 7th resistance R7, the second end of the first capacitance C1, described
The first end of the second end of three capacitance C3 and the 5th capacitance C5；The second end of the 6th resistance R6 is separately connected described
The first end of 7th resistance R7, the second end of the second capacitance C2, the first end of the third capacitance C3, the 4th capacitance
The first end of C4；The second end of the 4th capacitance C4 is connected to the positive input terminal of the prime amplifier 22, the 5th capacitance
The second end of C5 is connected to the negative input end of the prime amplifier 22；The drain electrode end of the second transistor M2 is connected to power end
VDD, the gate terminal of the second transistor M2 are connected to the drain electrode end of the second transistor M2.
In present embodiment, specifically, the first transistor M1 and the second transistor M2 are NMOS transistor.
Continuing with combining shown in ginseng Fig. 1, the prime amplifier 22 is to through treated the institute of the reflection of electromagnetic wave unit 21
It states multi-carrier telecommunication number and carries out pre-amplification processing.
The gain variable amplifier 23 is to through the prime amplifier 22, treated that the multi-carrier telecommunication number is amplified
Processing.
The gain inhibits that unit 24 will treated that the multi-carrier telecommunication number carries out through the gain variable amplifier 23
Wave distortion gain inhibition is handled.
Shown in ginseng Fig. 3, specifically, it includes the 8th resistance R8, the 6th capacitance C6, that the gain, which inhibits unit 24,
Three transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6 and the 7th transistor M7.
The source terminal of the third transistor M3, the source terminal of the 6th transistor M6 and the 7th transistor M7
Source terminal be respectively connected to the positive output end of the gain variable amplifier 23；The source terminal of the 4th transistor M4, institute
The source terminal, the source terminal of the 7th transistor M7 and the negative terminal of the 6th capacitance C6 for stating the 5th transistor M5 connect respectively
It is connected to the negative output terminal of the gain variable amplifier 23；The gate terminal of the third transistor M3 is respectively connected to the third
The drain electrode end of transistor M3, the gate terminal of the 6th transistor M6, the drain electrode end of the 4th transistor M4 and described
The gate terminal of four transistor M4；The drain electrode end of the 6th transistor M6 is respectively connected to the grid of the 5th transistor M5
It holds, the first end of the drain electrode end of the 5th transistor M5 and the 8th resistance R8；The second end of the 8th resistance R8
It is respectively connected to the gate terminal of the positive terminal and the 7th transistor M7 of the 6th capacitance C6；The 7th transistor M7's
The drain electrode end of source terminal and the 7th transistor M7 are respectively connected to the input of the bandpass filter 25.
It should be noted that in present embodiment, it is related in the description at the both ends of the electronic components such as resistance, capacitance, if
For the component there are positive and negative polarity, then it is negative pole end that first end, which is positive terminal, second end,；If not distinguishing positive and negative polarity,
First end and second end is then defined as according to the flow direction of electric signal successively, to facilitate description.
In present embodiment, more preferably, the third transistor M3 and the 6th transistor M6 are PMOS transistor；
The 4th transistor M4, the 5th transistor M5 and the 7th transistor M7 are NMOS transistor.
Shown in ginseng Fig. 1, the bandpass filter 25 is to through the gain variable amplifier 23, that treated is described
Multi-carrier telecommunication number is filtered.It should be noted that because the gain inhibits the setting of unit 24, at this point, the band logical
Filter 25 is then to receive to inhibit unit 24 to carry out wave distortion gain through the gain to inhibit treated the multi-carrier telecommunication
Number and it is filtered.
The comparator 26 is to through the bandpass filter 25, treated that the multi-carrier telecommunication number carries out digital signal turns
Change is handled.
The automatic gain control unit 29 judge through treated the multi-carrier telecommunication number of the comparator 26 whether be
Interference noise simultaneously feeds back to the gain variable amplifier 23, and the gain to control the gain variable amplifier 23 exports.
The integrator 27 will treated that the multi-carrier telecommunication number carries out reduction treatment through the comparator 26.
The Schmidt trigger 28 is to through the integrator 27, treated that the multi-carrier telecommunication number carries out integer processing.
The first transistor M1 is to through the Schmidt trigger 28, treated that the multi-carrier telecommunication number is amplified
And go out defeated.
The output end OUT then receives after the first transistor M1 treated multi-carrier telecommunications number that its is defeated
Go out, to realize the output of the infrared receiver chip circuit 100.
It is further illustrated below from integrated circuit：
The infrared induction diode 1 receives the infra-red carrier signal comprising useful signal (echo signal) and will
It is converted to the input terminal IN that multi-carrier telecommunication number is input to the chip interior system 2.
When the input terminal IN of chip interior system 2 is there are when strong electromagnetic wave interference signal, the reflection of electromagnetic wave list
Member 21 can adjust spontaneous impedance matching, so that Electromagnetic Interference signal is largely reflected back, without portion's system 2 in the chip
Amplifier chain road generate harmonic distortion, influence useful signal (echo signal) reception.Then, reflection of electromagnetic wave unit 21 exports
Multi-carrier telecommunication number containing useful information is amplified by the prime amplifier 22 and the gain variable amplifier 23, then
It is filtered by the bandpass filter 25, digital signal is then converted to by the comparator 26, using the product
Point device 27 restores the useful signal in the multi-carrier telecommunication number, finally pass through 28 integer of the Schmidt trigger and
It is output to the output end OUT by the first transistor M1 (NMOS transistor) and the amplifications of piezoresistance R excessively.
In the chip interior system 2, the automatic gain control unit 29 can read the load of the output of the comparator 26
The digital signal of wave electric signal and judge that the signal is useful signal or ambient light interference noise, and anti-based on the judgement
It is fed to the gain variable amplifier 23, to control the gain of the gain variable amplifier 23, keeps noise suppressed and useful
Signal can be amplified to output.
Due to the setting of the reflection of electromagnetic wave unit 21, when there are larger electricity for the infrared receiver chip circuit 100
When magnetic wave interference signal, which can produce to avoid high-frequency signal in 25 input node of the bandpass filter
Raw amplitude saturation distortion, to avoid generating low-frequency disturbance component, so that the infrared receiver chip circuit 100 is not outer
Portion's strong electromagnetic wave interference signal is influenced, and is improved its reliability and is claimed accurate performance.
The principle of the reflection of electromagnetic wave unit 21 is as follows：For effectively inhibit electromagnetic wave radiation and conduction and high order it is humorous
Wave adjusts the reflectance factor S11 that the reflection of electromagnetic wave unit 21 inputs so that electromagnetism using Maxwell's EM theory
The S11 values of interference signal are larger, so that the input matching of electromagnetic interference signal is very poor, most of electromagnetic interference signal is all
It can reflect away, without entering inside the infrared receiver chip circuit 100.It avoids interfering due to external strong electromagnetic wave
Signal and the input of the bandpass filter 25 generate low-frequency disturbance component, avoid the infrared receiver chip circuit 100
Mistake output is generated under external strong electromagnetic wave interference signal, i.e., high degree improves the infrared receiver chip circuit
100 anti-interference, especially electromagnetism interference (EMI) ability.
In addition, inhibiting 24 explanation of unit in conjunction with the gain：
Multi-carrier telecommunication number is input to the infrared receiver chip circuit 100, passes through the prime amplifier 22 and the increasing
Beneficial variable amplifier 23 is amplified.The gain inhibits load of the unit 24 as the gain variable amplifier 23, works as institute
When stating the amplitude slight saturation distortion of excessive generation of 23 output signal of gain variable amplifier, the gain inhibits unit 24 can be with
Adjusting spontaneous impedance reduces and maintains a period of time, so that the amplitude of 23 output signal of the gain variable amplifier is declined, emulates
The serious saturation distortion of its amplitude.Then the gain inhibits 24 output signal of unit to be filtered by the bandpass filter 25
Wave, then digital signal is converted to by the comparator 26, using the integrator 27 by useful signal in multi-carrier telecommunication number
It restores, 28 integer of last Schmidt trigger and process the first transistor M1 and the amplifications of piezoresistance R excessively are output to institute
State output end OUT.In the infrared receiver chip circuit 100, the automatic gain control unit 29 can read the comparison
The digital signal of the multi-carrier telecommunication number of the output of device 26 and the signal is judged for useful signal or ambient light interference noise, and
And the gain variable amplifier 23 is fed back to based on the judgement, to control the gain of the gain variable amplifier 23, make to make an uproar
Sound is suppressed and useful signal can be amplified to output.
Since the gain inhibits the setting of unit 24, there are larger WIFI outside infrared ray receiving chip circuit 100
When interference signal, which inhibits unit 24 that can be produced in the input node of the bandpass filter 25 to avoid high-frequency signal
Raw amplitude saturation distortion, to avoid generating low-frequency disturbance component, so that the infrared receiver chip circuit 100 is not outer
The strong WIFI interference signals in portion are influenced.
The gain inhibits the principle of unit 24 as follows：When 23 output amplitude of the gain variable amplifier is more than described the
The sum of three transistor M3 threshold voltages and the 4th transistor M4 threshold voltages, the third transistor M3 and the 4th transistor
The two MOS transistors of M4 will be opened, and be operated in sub-threshold region.23 output signal of the gain variable amplifier is produced at this time
Raw slight saturation distortion.The third transistor M3 generates electric current and flows to its drain electrode end from its source terminal, which is mirrored onto
In its M6 of 6th transistor and the 5th transistor M5, the drain-to-gate voltage of the 5th transistor M5 is made to increase.It is described
The drain-to-gate voltage of 5th transistor M5 gives the 7th transistor after the 8th resistance R8 and the 6th capacitance C6 filtering
M7 makes the 7th transistor M7 open, and reduces equivalent between the positive-negative output end of the gain variable amplifier 23
Resistance avoids saturation distortion to reduce its output amplitude.Due to the 8th resistance R8 and the 6th capacitance C6 RC when
Between constant be generally 5ms, therefore the equivalent conduction impedance set by the 7th transistor M7 can maintain a period of time.
The gain inhibits the setting of unit 24 so that the infrared receiver chip circuit 100 is in the bandpass filtering
The input of device 25 will not generate waveform saturation distortion because of external strong WIFI interference signals.To avoid generating low-frequency disturbance point
Amount, so that the infrared receiver chip circuit 100 is not influenced by external strong WIFI interference signals.
And in the infrared receiver chip circuit 100 of the present invention, present embodiment increases the electricity in the circuit simultaneously
Magnetic wave reflector element 21 and the gain inhibit unit 24 so that and the anti-interference ability of infrared receiver chip circuit 100 is stronger,
Better reliability, and accuracy rate higher.
The present invention also provides a kind of infrared receiver system (not shown), including above-mentioned infrared receiver provided by the invention
Chip circuit.
Compared with the relevant technologies, infrared receiver chip circuit of the invention and infrared receiver system pass through described pre-
Reflection of electromagnetic wave unit is added in the front end of amplifier, receives the multi-carrier telecommunication number by the reflection of electromagnetic wave unit and to institute
It states multi-carrier telecommunication number and carries out Electromagnetic Interference signal reflex processing, be effectively reflected into the infrared receiver chip circuit
Electromagnetic Interference signal, and then avoid the output of the infrared receiver chip circuit due to external electromagnetic waves signal interference
The problem of output error signal, improves the infrared receiver chip circuit and the anti-interference ability of infrared receiver system,
Especially anti-electromagnetic wave interference performance, and then increase its reliability and accuracy.In addition, the infrared receiver chip circuit
The gain is also added between the gain variable amplifier and the bandpass filter and inhibits unit, and being used for will be through the increasing
Treated that the multi-carrier telecommunication number carries out wave distortion gain inhibition processing for beneficial variable amplifier, improves institute from another point of view
Infrared receiver chip circuit and the anti-interference ability of infrared receiver system are stated, especially anti-WIFI interference performances, further
Improve the infrared receiver chip circuit and the Synthetic Anti-jamming and reliability of infrared receiver system.
It should be noted that each embodiment above by reference to described in attached drawing be only to illustrate the present invention and unrestricted
The range of invention, it will be understood by those of ordinary skill in the art that, it is right under the premise without departing from the spirit and scope of the present invention
The modification or equivalent replacement that the present invention carries out, should all cover within the scope of the present invention.In addition, signified unless the context
Outside, the word occurred in the singular includes plural form, and vice versa.In addition, unless stated otherwise, then any embodiment
All or part of is used in combination with all or part of of any other embodiment.
Claims (7)
1. a kind of infrared receiver chip circuit, including：
Infrared induction diode for receiving infrared-ray carrier signal and is converted into multi-carrier telecommunication number；And in chip
Portion's system, for the multi-carrier telecommunication number to be carried out Signal optimum processing and is exported；
It is characterized in that, the chip interior system includes：
Input terminal, for receiving the multi-carrier telecommunication number；
Reflection of electromagnetic wave unit carries out Electromagnetic Interference letter for receiving the multi-carrier telecommunication number, and to the multi-carrier telecommunication number
Number reflection processing；
Prime amplifier, for carrying out pre-amplification processing to the multi-carrier telecommunication number after the reflection of electromagnetic wave cell processing；
Gain variable amplifier, for treated that the multi-carrier telecommunication number is amplified processing through the prime amplifier；
Bandpass filter, for treated that the multi-carrier telecommunication number is filtered through the gain variable amplifier；
Comparator, for treated that the multi-carrier telecommunication number carries out digital signal conversion processing through the bandpass filter；
Automatic gain control unit, for judging that treated whether the multi-carrier telecommunication number is interference noise through the comparator
And the gain variable amplifier is fed back to, the gain to control the gain variable amplifier exports；
Integrator, for will treated that the multi-carrier telecommunication number carries out reduction treatment through the comparator；
Schmidt trigger, for treated that the multi-carrier telecommunication number carries out integer processing through the integrator；
The first transistor, for treated that the multi-carrier telecommunication number is amplified and goes out defeated through the Schmidt trigger；
And
Output end；
The gate terminal of the first transistor is connected to the output of the Schmidt trigger, the source terminal of the first transistor
It is connected to ground terminal, the drain electrode of the first transistor is connected to the output end and the drain electrode of the first transistor passes through string
Connection one crosses piezoresistance and is connected to power end.
2. infrared receiver chip circuit according to claim 1, which is characterized in that the reflection of electromagnetic wave unit includes
First resistor, second resistance, 3rd resistor, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the first capacitance, second
Capacitance, third capacitance, the 4th capacitance, the 5th capacitance and second transistor；
The first end of the first resistor is connected to the output of the infrared induction diode, the second end of the first resistor
It is respectively connected to the first end of the first end and the 3rd resistor of the second resistance；
The second end of the second resistance is respectively connected to the first end of the first end and the second capacitance of the 5th resistance；
The second end of the 3rd resistor be respectively connected to the first end of the 4th resistance, the first end of the 6th resistance with
And the first end of first capacitance；
The second end of 4th resistance is connected to the source terminal of the second transistor；
The second end of 5th resistance be respectively connected to the second end of the 7th resistance, the second end of first capacitance,
The first end of the second end of the third capacitance and the 5th capacitance；
The second end of 6th resistance is separately connected the first end, the second end of second capacitance, institute of the 7th resistance
State the first end of third capacitance, the first end of the 4th capacitance；
The second end of 4th capacitance is connected to the positive input terminal of the prime amplifier, the second end connection of the 5th capacitance
To the negative input end of the prime amplifier；
The drain electrode end of the second transistor is connected to power end, and the gate terminal of the second transistor is connected to second crystalline substance
The drain electrode end of body pipe.
3. infrared receiver chip circuit according to claim 2, which is characterized in that the first transistor and described
Two-transistor is NMOS transistor.
4. infrared receiver chip circuit according to claim 1, which is characterized in that the infrared receiver chip circuit
Further include that gain inhibits unit, the gain inhibit unit be connected to the gain variable amplifier and the bandpass filter it
Between, for will treated that the multi-carrier telecommunication number carries out wave distortion gain inhibition processing through the gain variable amplifier.
5. infrared receiver chip circuit according to claim 4, which is characterized in that it includes that the gain, which inhibits unit,
Eight resistance, the 6th capacitance, third transistor, the 4th transistor, the 5th transistor, the 6th transistor and the 7th transistor；
The source terminal of the source terminal of the third transistor, the source terminal of the 6th transistor and the 7th transistor point
It is not connected to the positive output end of the gain variable amplifier；
The source terminal of 4th transistor, the source terminal of the 5th transistor, the source terminal of the 7th transistor and
The negative terminal of 6th capacitance is respectively connected to the negative output terminal of the gain variable amplifier；
The gate terminal of the third transistor is respectively connected to the grid of the drain electrode end of the third transistor, the 6th transistor
Extremely, the gate terminal of the drain electrode end of the 4th transistor, the 4th transistor；
The drain electrode end of 6th transistor is respectively connected to the leakage of the gate terminal, the 5th transistor of the 5th transistor
The first end of extreme and described 8th resistance；
The second end of 8th resistance is respectively connected to the grid of the positive terminal and the 7th transistor of the 6th capacitance
End；
The source terminal of 7th transistor and the drain electrode end of the 7th transistor are respectively connected to the bandpass filter
Input.
6. infrared receiver chip circuit according to claim 5, which is characterized in that the third transistor and described
Six transistors are PMOS transistor；4th transistor, the 5th transistor and the 7th transistor are
NMOS transistor.
7. a kind of infrared receiver system, which is characterized in that including infrared receiver as claimed in any one of claims 1 to 6
Chip circuit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810446400.3A CN108736967B (en) | 2018-05-11 | 2018-05-11 | Infrared receiving chip circuit and infrared receiving system |
| PCT/CN2018/110807 WO2019214164A1 (en) | 2018-05-11 | 2018-10-18 | Infrared receiving chip circuit and infrared receiving system |
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| CN201810446400.3A CN108736967B (en) | 2018-05-11 | 2018-05-11 | Infrared receiving chip circuit and infrared receiving system |
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| CN108736967A true CN108736967A (en) | 2018-11-02 |
| CN108736967B CN108736967B (en) | 2021-04-06 |
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| CN112686357A (en) * | 2019-10-17 | 2021-04-20 | 莫冰 | Ultrahigh frequency RFID (radio frequency identification) tag and anti-electromagnetic interference module thereof |
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| CN113328764B (en) * | 2021-06-04 | 2022-10-28 | 深圳诺博医疗科技有限公司 | Intelligent empty box detection system and intelligent empty box detection method |
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| CN108736967B (en) | 2021-04-06 |
| WO2019214164A1 (en) | 2019-11-14 |
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