CN108718216A - Infrared receiver chip and its system - Google Patents
Infrared receiver chip and its system Download PDFInfo
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- CN108718216A CN108718216A CN201810446309.1A CN201810446309A CN108718216A CN 108718216 A CN108718216 A CN 108718216A CN 201810446309 A CN201810446309 A CN 201810446309A CN 108718216 A CN108718216 A CN 108718216A
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- 230000006698 induction Effects 0.000 claims abstract description 9
- 230000005764 inhibitory process Effects 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims description 16
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 2
- 238000005516 engineering process Methods 0.000 abstract description 7
- 241000208340 Araliaceae Species 0.000 description 4
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 4
- 235000003140 Panax quinquefolius Nutrition 0.000 description 4
- 235000008434 ginseng Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
- H04B10/114—Indoor or close-range type systems
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/693—Arrangements for optimizing the preamplifier in the receiver
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/693—Arrangements for optimizing the preamplifier in the receiver
- H04B10/6931—Automatic gain control of the preamplifier
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
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- Amplifiers (AREA)
Abstract
The present invention provides a kind of infrared receiver chips, including infrared induction diode and chip interior system；The chip interior system includes the input terminal being sequentially connected electrically, prime amplifier, gain variable amplifier, gain inhibition unit, bandpass filter, comparator, integrator, Schmidt trigger, the first transistor, output end and the automatic gain control unit being connected between the output of the comparator and the input of the gain variable amplifier；The gate terminal of the first transistor is connected to the output of the Schmidt trigger, and source terminal is connected to ground terminal, and drain electrode is connected to the output end and the drain electrode of the first transistor is connected to power end by the piezoresistance of series connection one.The present invention also provides a kind of infrared receiver systems including the infrared receiver chip.Compared with the relevant technologies, infrared receiver chip of the invention and infrared receiver system rejection to disturbance be strong, good reliability and accuracy are high.
Description
Technical field
The present invention relates to chip technology field more particularly to a kind of infrared receiver chip and its systems.
Background technology
With the development of information age, various wireless telecommunications become mainstream.Infrared receiver chip is wherein channel radio
The major part that signal receives in news.
It is the number that comparator output is read by automatic growth control module in the infrared receiver chip of the relevant technologies
Signal simultaneously determines whether noise or useful signal.Infra-red carrier signal frequency range is about 36Khz to 40Khz, this is red
The common centre frequency of bandpass filter that outside line receives chip is 36Khz or 38Khz or 40Khz, and bandwidth is about 4.5Khz.?
External WIFI interference signal intensities are weaker, and WIFI signal is lost there is no larger waveform is generated in the infrared receiver chip
In the case of genuine, the bandpass filter of the infrared receiver chip can effectively filter out the WIFI that carrier frequency is about 2.4Ghz and do
Disturb signal.
However, when external WIFI interference signal intensities are stronger, signal can be caused in infrared receiver chip interior amplifier chain
Road waveforms amplitude is excessive, leads to wave distortion.And wave distortion can cause the interference signal for being originally used for 2.4Ghz to generate derivative
Low frequency component, certain low frequency components are possible to fall in the bandpass range of infrared receiver chip, and then cause this infrared
There is noise accidentally output in the output end that line receives chip, increases its signal transmission bit error rate.
Therefore, it is really necessary to provide a kind of new infrared receiver chip and its system to solve the above problems.
Invention content
For the above the deficiencies in the prior art, the present invention proposes a kind of strong anti-interference performance, good reliability and accuracy rate height
Infrared receiver chip and its system.
In order to solve the above technical problem, the present invention provides a kind of infrared receiver chips, including：Infrared induction two
Pole pipe for receiving infrared-ray carrier signal and is converted into multi-carrier telecommunication number；And chip interior system, being used for will be described
Multi-carrier telecommunication number carries out Signal optimum processing and exports.The chip interior system includes：
Input terminal, for receiving the multi-carrier telecommunication number；
Prime amplifier, for being carried out at pre-amplification to the multi-carrier telecommunication number after the reflection of electromagnetic wave cell processing
Reason；
Gain variable amplifier, for treated that the multi-carrier telecommunication number is amplified place through the prime amplifier
Reason；
Gain inhibits unit, for will treated that the multi-carrier telecommunication number carries out waveform through the gain variable amplifier
Distortion gain inhibition is handled；
Bandpass filter, for treated that the multi-carrier telecommunication number is filtered place through the gain variable amplifier
Reason；
Comparator, for treated that the multi-carrier telecommunication number carries out at digital signal conversion through the bandpass filter
Reason；
Automatic gain control unit, for judging that treated whether the multi-carrier telecommunication number is interference through the comparator
Noise simultaneously feeds back to the gain variable amplifier, and the gain to control the gain variable amplifier exports；
Integrator, for will treated that the multi-carrier telecommunication number carries out reduction treatment through the comparator；
Schmidt trigger, for treated that the multi-carrier telecommunication number carries out integer processing through the integrator；
The first transistor, for treated that the multi-carrier telecommunication number is amplified and goes out through the Schmidt trigger
It is defeated；And
Output end；
The gate terminal of the first transistor is connected to the output of the Schmidt trigger, the source of the first transistor
Extreme to be connected to ground terminal, the drain electrode of the first transistor is connected to the output end and the drain electrode of the first transistor is logical
It crosses the piezoresistance excessively of series connection one and is connected to power end.
Preferably, it includes the 8th resistance, the 6th capacitance, third transistor, the 4th transistor, that the gain, which inhibits unit,
Five transistors, the 6th transistor and the 7th transistor；
The source electrode of the source terminal of the third transistor, the source terminal of the 6th transistor and the 7th transistor
End is respectively connected to the positive output end of the gain variable amplifier；
The source terminal of 4th transistor, the source terminal of the 5th transistor, the source terminal of the 7th transistor
And the negative terminal of the 6th capacitance is respectively connected to the negative output terminal of the gain variable amplifier；
The gate terminal of the third transistor is respectively connected to the drain electrode end of the third transistor, the 6th transistor
Gate terminal, the gate terminal of the drain electrode end of the 4th transistor, the 4th transistor；
The drain electrode end of 6th transistor is respectively connected to the gate terminal of the 5th transistor, the 5th transistor
Drain electrode end and the 8th resistance first end；
The second end of 8th resistance is respectively connected to the positive terminal of the 6th capacitance and the 7th transistor
Gate terminal；
The source terminal of 7th transistor and the drain electrode end of the 7th transistor are respectively connected to the bandpass filtering
The input of device.
Preferably, the third transistor and the 6th transistor are PMOS transistor；4th transistor, institute
It is NMOS transistor to state the 5th transistor and the 7th transistor.
The present invention also provides a kind of infrared receiver systems, including above-mentioned infrared receiver chip provided by the invention.
Compared with the relevant technologies, infrared receiver chip of the invention and its system pass through in the gain variable amplifier
The gain is added between the bandpass filter and inhibits unit, for will be through the gain variable amplifier treated institute
It states multi-carrier telecommunication number and carries out wave distortion gain inhibition processing, improve the infrared receiver chip and infrared receiver system
Anti-interference ability, especially anti-WIFI interference performances, to improve the infrared receiver chip and infrared receiver system
The Synthetic Anti-jamming of system improves its reliability and accuracy.
Description of the drawings
The invention will now be described in detail with reference to the accompanying drawings.By being described in detail made by conjunction with the following drawings, of the invention is upper
It states or otherwise content will be apparent and be easier to understand.In attached drawing：
Fig. 1 is the structure diagram of infrared receiver chip of the present invention；
Fig. 2 is the circuit structure diagram of reflection of electromagnetic wave unit in Fig. 1；
Fig. 3 is the circuit structure diagram that gain inhibits unit in Fig. 1.
Specific implementation mode
The specific implementation mode that the invention will now be described in detail with reference to the accompanying drawings.
Specific implementation mode/the embodiment recorded herein is the specific specific implementation mode of the present invention, for illustrating this
The design of invention is explanatory and illustrative, should not be construed as the limitation to embodiment of the present invention and the scope of the invention.
In addition to the embodiment recorded herein, those skilled in the art can also be based on disclosed in the application claims and specification
For content using obvious other technical solutions, these technical solutions include taking the post as using the embodiment to recording herein
The technical solution of what obvious substitutions and modifications, all within protection scope of the present invention.
It please join shown in Fig. 1, the present invention provides a kind of infrared receiver chips 100, and the present invention provides a kind of infrared rays
Receive chip 100, including infrared induction diode 1 and the chip interior system that is electrically connected with the infrared induction diode 1
System 2.
The infrared induction diode 1 is for receiving infrared-ray carrier signal and is converted into multi-carrier telecommunication number.Institute
Chip interior system 2 is stated for the multi-carrier telecommunication number to be carried out Signal optimum processing and is exported.
Specifically, the chip interior system 2 include the input terminal IN being sequentially connected electrically, it is reflection of electromagnetic wave unit 21, pre-
Amplifier (Pre-amplifier, Pre-amp) 22, gain variable amplifier (variable gain amplifier, VGA)
23, gain inhibits unit 24, bandpass filter (band pass filter, BPF) 25, comparator (Comparator) 26, product
Divide device (Integrator) 27, Schmidt trigger (Schmitt trigger) 28, the first transistor M1, output end OUT, with
And it is connected to the automatic gain control unit between the output of the comparator 26 and the input of the gain variable amplifier 23
(Automatic gain control, AGC) 29.
The gate terminal of the first transistor M1 is connected to the output of the Schmidt trigger 28, the first transistor
The drain electrode that the source terminal of M1 is connected to ground terminal GND, the first transistor M1 is connected to the output end OUT and described first
The drain electrode of transistor M1 crosses piezoresistance R by series connection one and is connected to power end VDD.
It should be noted that the input terminal IN, the prime amplifier 22, the gain variable amplifier 23, the band
It is bandpass filter 25, the comparator 26, the integrator 27, the Schmidt trigger 28, the first transistor M1, described
Output end OUT and the automatic gain control unit 29 can be realized the infrared receiver chip 100 signal receive with
Emission function.And the reflection of electromagnetic wave unit 21 and the gain, which inhibit unit 24, to be connect to effectively improve the infrared ray
The anti-interference ability for receiving chip 100, keeps its reliability more excellent, accuracy higher.
Wherein, the reflection of electromagnetic wave unit 21 can reflect most of interference signal, especially Electromagnetic Interference signal；And
The gain inhibits unit 24 that can then filter out most of interference signal and inhibits the amplification output of part interference signal, especially
It is to filter out WIFI interference signals.
That is, in the infrared receiver chip 100 of the present invention, in order to realize that its anti-interference ability and signal are accurate
Property, it can only add the reflection of electromagnetic wave unit 21 or only add the gain inhibition unit 24, or add simultaneously described
Reflection of electromagnetic wave unit 21 and the gain inhibit unit 24, these three schemes that can solve the technology that the present invention refers to and ask
Topic.
In present embodiment, for adding the reflection of electromagnetic wave unit 21 and the gain simultaneously and inhibit unit 24 into
Row is described in detail.
1 receiving infrared-ray carrier signal of the infrared induction diode is simultaneously converted into multi-carrier telecommunication number.It is described defeated
Enter to hold IN to receive the multi-carrier telecommunication number and be delivered to the reflection of electromagnetic wave unit 21, the reflection of electromagnetic wave unit 21 receives
After the multi-carrier telecommunication number, and Electromagnetic Interference signal reflex processing is carried out to the multi-carrier telecommunication number.
Incorporated by reference to ginseng Fig. 2 shown in, specifically, the reflection of electromagnetic wave unit 21 include first resistor R1, second resistance R2,
3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the first capacitance C1, the second capacitance C2,
Third capacitance C3, the 4th capacitance C4, the 5th capacitance C5 and second transistor M2.
The first end of the first resistor R1 is connected to the output of the infrared induction diode 1, the first resistor
The second end of R1 is respectively connected to the first end of the first end and the 3rd resistor R3 of the second resistance R2；Second electricity
The second end of resistance R2 is respectively connected to the first end of the first end and the second capacitance C2 of the 5th resistance R5；The 3rd resistor
The second end of R3 is respectively connected to the first end of the 4th resistance R4, the first end and described first of the 6th resistance R6
The first end of capacitance C1；The second end of the 4th resistance R4 is connected to the source terminal of the second transistor M2；Described 5th
The second end of resistance R5 is respectively connected to the second end of the 7th resistance R7, the second end of the first capacitance C1, described
The first end of the second end of three capacitance C3 and the 5th capacitance C5；The second end of the 6th resistance R6 is separately connected described
The first end of 7th resistance R7, the second end of the second capacitance C2, the first end of the third capacitance C3, the 4th capacitance
The first end of C4；The second end of the 4th capacitance C4 is connected to the positive input terminal of the prime amplifier 22, the 5th capacitance
The second end of C5 is connected to the negative input end of the prime amplifier 22；The drain electrode end of the second transistor M2 is connected to power end
VDD, the gate terminal of the second transistor M2 are connected to the drain electrode end of the second transistor M2.
In present embodiment, specifically, the first transistor M1 and the second transistor M2 are NMOS transistor.
Continuing with combining shown in ginseng Fig. 1, the prime amplifier 22 is to through treated the institute of the reflection of electromagnetic wave unit 21
It states multi-carrier telecommunication number and carries out pre-amplification processing.
The gain variable amplifier 23 is to through the prime amplifier 22, treated that the multi-carrier telecommunication number is amplified
Processing.
The gain inhibits that unit 24 will treated that the multi-carrier telecommunication number carries out through the gain variable amplifier 23
Wave distortion gain inhibition is handled.
Shown in ginseng Fig. 3, specifically, it includes the 8th resistance R8, the 6th capacitance C6, that the gain, which inhibits unit 24,
Three transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6 and the 7th transistor M7.
The source terminal of the third transistor M3, the source terminal of the 6th transistor M6 and the 7th transistor M7
Source terminal be respectively connected to the positive output end of the gain variable amplifier 23；The source terminal of the 4th transistor M4, institute
The source terminal, the source terminal of the 7th transistor M7 and the negative terminal of the 6th capacitance C6 for stating the 5th transistor M5 connect respectively
It is connected to the negative output terminal of the gain variable amplifier 23；The gate terminal of the third transistor M3 is respectively connected to the third
The drain electrode end of transistor M3, the gate terminal of the 6th transistor M6, the drain electrode end of the 4th transistor M4 and described
The gate terminal of four transistor M4；The drain electrode end of the 6th transistor M6 is respectively connected to the grid of the 5th transistor M5
It holds, the first end of the drain electrode end of the 5th transistor M5 and the 8th resistance R8；The second end of the 8th resistance R8
It is respectively connected to the gate terminal of the positive terminal and the 7th transistor M7 of the 6th capacitance C6；The 7th transistor M7's
The drain electrode end of source terminal and the 7th transistor M7 are respectively connected to the input of the bandpass filter 25.
It should be noted that in present embodiment, it is related in the description at the both ends of the electronic components such as resistance, capacitance, if
For the component there are positive and negative polarity, then it is negative pole end that first end, which is positive terminal, second end,；If not distinguishing positive and negative polarity,
First end and second end is then defined as according to the flow direction of electric signal successively, to facilitate description.
In present embodiment, more preferably, the third transistor M3 and the 6th transistor M6 are PMOS transistor；
The 4th transistor M4, the 5th transistor M5 and the 7th transistor M7 are NMOS transistor.
Shown in ginseng Fig. 1, the bandpass filter 25 is to through the gain variable amplifier 23, that treated is described
Multi-carrier telecommunication number is filtered.It should be noted that because the gain inhibits the setting of unit 24, at this point, the band logical
Filter 25 is then to receive to inhibit unit 24 to carry out wave distortion gain through the gain to inhibit treated the multi-carrier telecommunication
Number and it is filtered.
The comparator 26 is to through the bandpass filter 25, treated that the multi-carrier telecommunication number carries out digital signal turns
Change is handled.
The automatic gain control unit 29 judge through treated the multi-carrier telecommunication number of the comparator 26 whether be
Interference noise simultaneously feeds back to the gain variable amplifier 23, and the gain to control the gain variable amplifier 23 exports.
The integrator 27 will treated that the multi-carrier telecommunication number carries out reduction treatment through the comparator 26.
The Schmidt trigger 28 is to through the integrator 27, treated that the multi-carrier telecommunication number carries out integer processing.
The first transistor M1 is to through the Schmidt trigger 28, treated that the multi-carrier telecommunication number is amplified
And go out defeated.
The output end OUT then receives after the first transistor M1 treated multi-carrier telecommunications number that its is defeated
Go out, to realize the output of the infrared receiver chip 100.
It is further illustrated below from integrated circuit：
The infrared induction diode 1 receives the infra-red carrier signal comprising useful signal (echo signal) and will
It is converted to the input terminal IN that multi-carrier telecommunication number is input to the chip interior system 2.
When the input terminal IN of chip interior system 2 is there are when strong electromagnetic wave interference signal, the reflection of electromagnetic wave list
Member 21 can adjust spontaneous impedance matching, so that Electromagnetic Interference signal is largely reflected back, without portion's system 2 in the chip
Amplifier chain road generate harmonic distortion, influence useful signal (echo signal) reception.Then, reflection of electromagnetic wave unit 21 exports
Multi-carrier telecommunication number containing useful information is amplified by the prime amplifier 22 and the gain variable amplifier 23, then
It is filtered by the bandpass filter 25, digital signal is then converted to by the comparator 26, using the product
Point device 27 restores the useful signal in the multi-carrier telecommunication number, finally pass through 28 integer of the Schmidt trigger and
It is output to the output end OUT by the first transistor M1 (NMOS transistor) and the amplifications of piezoresistance R excessively.
In the chip interior system 2, the automatic gain control unit 29 can read the load of the output of the comparator 26
The digital signal of wave electric signal and judge that the signal is useful signal or ambient light interference noise, and anti-based on the judgement
It is fed to the gain variable amplifier 23, to control the gain of the gain variable amplifier 23, keeps noise suppressed and useful
Signal can be amplified to output.
Due to the setting of the reflection of electromagnetic wave unit 21, when there are larger electromagnetic waves for the infrared receiver chip 100
When interference signal, which can generate width to avoid high-frequency signal in 25 input node of the bandpass filter
It is worth saturation distortion, to avoid generating low-frequency disturbance component, so that the infrared receiver chip 100 is not by external strong electromagnetic
Interference wave signal is influenced, and is improved its reliability and is claimed accurate performance.
The principle of the reflection of electromagnetic wave unit 21 is as follows：For effectively inhibit electromagnetic wave radiation and conduction and high order it is humorous
Wave adjusts the reflectance factor S11 that the reflection of electromagnetic wave unit 21 inputs so that electromagnetism using Maxwell's EM theory
The S11 values of interference signal are larger, so that the input matching of electromagnetic interference signal is very poor, most of electromagnetic interference signal is all
It can reflect away, without entering inside the infrared receiver chip 100.It avoids due to external strong electromagnetic wave interference signal
And low-frequency disturbance component is generated in the input of the bandpass filter 25, avoid the infrared receiver chip 100 external strong
Mistake output is generated under Electromagnetic Interference signal, i.e., high degree improves the anti-interference of the infrared receiver chip 100, especially
It is electromagnetism interference (EMI) ability.
In addition, inhibiting 24 explanation of unit in conjunction with the gain：
Multi-carrier telecommunication number is input to the infrared receiver chip 100, can by the prime amplifier 22 and the gain
Become amplifier 23 to be amplified.The gain inhibits load of the unit 24 as the gain variable amplifier 23, when the increasing
When the amplitude slight saturation distortion of excessive generation of 23 output signal of beneficial variable amplifier, the gain inhibits unit 24 that can adjust
Spontaneous impedance reduces and maintains a period of time, so that the amplitude of 23 output signal of the gain variable amplifier is declined, emulates its width
It is worth serious saturation distortion.Then the gain inhibits 24 output signal of unit to be filtered by the bandpass filter 25, then
Digital signal is converted to by the comparator 26, restores useful signal in multi-carrier telecommunication number using the integrator 27
Go out, 28 integer of last Schmidt trigger and process the first transistor M1 and the mistake piezoresistance R amplifications are output to described defeated
Outlet OUT.In the infrared receiver chip 100, the automatic gain control unit 29 can read the defeated of the comparator 26
The digital signal of the multi-carrier telecommunication number gone out and the signal is judged for useful signal or ambient light interference noise, and based on should
Judgement feeds back to the gain variable amplifier 23, to control the gain of the gain variable amplifier 23, noise is made to be suppressed
And useful signal can be amplified to output.
Since the gain inhibits the setting of unit 24, there are larger WIFI interference outside infrared receiver chip 100
When signal, which inhibits unit 24 that can generate width in the input node of the bandpass filter 25 to avoid high-frequency signal
It is worth saturation distortion, to avoid generating low-frequency disturbance component, so that the infrared receiver chip 100 is not by external strong WIFI
Interference signal is influenced.
The gain inhibits the principle of unit 24 as follows：When 23 output amplitude of the gain variable amplifier is more than described the
The sum of three transistor M3 threshold voltages and the 4th transistor M4 threshold voltages, the third transistor M3 and the 4th transistor
The two MOS transistors of M4 will be opened, and be operated in sub-threshold region.23 output signal of the gain variable amplifier is produced at this time
Raw slight saturation distortion.The third transistor M3 generates electric current and flows to its drain electrode end from its source terminal, which is mirrored onto
In its M6 of 6th transistor and the 5th transistor M5, the drain-to-gate voltage of the 5th transistor M5 is made to increase.It is described
The drain-to-gate voltage of 5th transistor M5 gives the 7th transistor after the 8th resistance R8 and the 6th capacitance C6 filtering
M7 makes the 7th transistor M7 open, and reduces equivalent between the positive-negative output end of the gain variable amplifier 23
Resistance avoids saturation distortion to reduce its output amplitude.Due to the 8th resistance R8 and the 6th capacitance C6 RC when
Between constant be generally 5ms, therefore the equivalent conduction impedance set by the 7th transistor M7 can maintain a period of time.
The gain inhibits the setting of unit 24 so that the infrared receiver chip 100 is in the bandpass filter 25
Input will not generate waveform saturation distortion because of external strong WIFI interference signals.To avoid generating low-frequency disturbance component,
So that the infrared receiver chip 100 is not influenced by external strong WIFI interference signals.
And in the infrared receiver chip 100 of the present invention, present embodiment increases the electromagnetic wave in the circuit simultaneously
Reflector element 21 and the gain inhibit unit 24 so that the anti-interference ability of infrared receiver chip 100 is stronger, and reliability is more
It is good, and accuracy rate higher.
The present invention also provides a kind of infrared receiver system (not shown), including above-mentioned infrared receiver provided by the invention
Chip.
Compared with the relevant technologies, infrared receiver chip of the invention and its system pass through in the gain variable amplifier
The gain is added between the bandpass filter and inhibits unit, for will be through the gain variable amplifier treated institute
It states multi-carrier telecommunication number and carries out wave distortion gain inhibition processing, improve the infrared receiver chip and infrared receiver system
Anti-interference ability, especially anti-WIFI interference performances, to improve the infrared receiver chip and infrared receiver system
The Synthetic Anti-jamming of system improves its reliability and accuracy.
It should be noted that each embodiment above by reference to described in attached drawing be only to illustrate the present invention and unrestricted
The range of invention, it will be understood by those of ordinary skill in the art that, it is right under the premise without departing from the spirit and scope of the present invention
The modification or equivalent replacement that the present invention carries out, should all cover within the scope of the present invention.In addition, signified unless the context
Outside, the word occurred in the singular includes plural form, and vice versa.In addition, unless stated otherwise, then any embodiment
All or part of is used in combination with all or part of of any other embodiment.
Claims (4)
1. a kind of infrared receiver chip, including：
Infrared induction diode for receiving infrared-ray carrier signal and is converted into multi-carrier telecommunication number；And in chip
Portion's system, for the multi-carrier telecommunication number to be carried out Signal optimum processing and is exported；
It is characterized in that, the chip interior system includes：
Input terminal, for receiving the multi-carrier telecommunication number；
Prime amplifier, for carrying out pre-amplification processing to the multi-carrier telecommunication number after the reflection of electromagnetic wave cell processing；
Gain variable amplifier, for treated that the multi-carrier telecommunication number is amplified processing through the prime amplifier；
Gain inhibits unit, for will treated that the multi-carrier telecommunication number carries out wave distortion through the gain variable amplifier
Gain inhibition is handled；
Bandpass filter, for treated that the multi-carrier telecommunication number is filtered through the gain variable amplifier；
Comparator, for treated that the multi-carrier telecommunication number carries out digital signal conversion processing through the bandpass filter；
Automatic gain control unit, for judging that treated whether the multi-carrier telecommunication number is interference noise through the comparator
And the gain variable amplifier is fed back to, the gain to control the gain variable amplifier exports；
Integrator, for will treated that the multi-carrier telecommunication number carries out reduction treatment through the comparator；
Schmidt trigger, for treated that the multi-carrier telecommunication number carries out integer processing through the integrator；
The first transistor, for treated that the multi-carrier telecommunication number is amplified and goes out defeated through the Schmidt trigger；
And
Output end；
The gate terminal of the first transistor is connected to the output of the Schmidt trigger, the source terminal of the first transistor
It is connected to ground terminal, the drain electrode of the first transistor is connected to the output end and the drain electrode of the first transistor passes through string
Connection one crosses piezoresistance and is connected to power end.
2. infrared receiver chip according to claim 1, which is characterized in that it includes the 8th electricity that the gain, which inhibits unit,
Resistance, the 6th capacitance, third transistor, the 4th transistor, the 5th transistor, the 6th transistor and the 7th transistor；
The source terminal of the source terminal of the third transistor, the source terminal of the 6th transistor and the 7th transistor point
It is not connected to the positive output end of the gain variable amplifier；
The source terminal of 4th transistor, the source terminal of the 5th transistor, the source terminal of the 7th transistor and
The negative terminal of 6th capacitance is respectively connected to the negative output terminal of the gain variable amplifier；
The gate terminal of the third transistor is respectively connected to the grid of the drain electrode end of the third transistor, the 6th transistor
Extremely, the gate terminal of the drain electrode end of the 4th transistor, the 4th transistor；
The drain electrode end of 6th transistor is respectively connected to the leakage of the gate terminal, the 5th transistor of the 5th transistor
The first end of extreme and described 8th resistance；
The second end of 8th resistance is respectively connected to the grid of the positive terminal and the 7th transistor of the 6th capacitance
End；
The source terminal of 7th transistor and the drain electrode end of the 7th transistor are respectively connected to the bandpass filter
Input.
3. infrared receiver chip according to claim 2, which is characterized in that the third transistor and the 6th crystalline substance
Body pipe is PMOS transistor；4th transistor, the 5th transistor and the 7th transistor are NMOS crystalline substances
Body pipe.
4. a kind of infrared receiver system, which is characterized in that include the infrared receiver as described in claim 1-3 any one
Chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN108718216B (en) | 2021-04-06 |
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