CN208174687U - Infrared receiver chip circuit and infrared receiver system - Google Patents
Infrared receiver chip circuit and infrared receiver system Download PDFInfo
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- CN208174687U CN208174687U CN201820707319.1U CN201820707319U CN208174687U CN 208174687 U CN208174687 U CN 208174687U CN 201820707319 U CN201820707319 U CN 201820707319U CN 208174687 U CN208174687 U CN 208174687U
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Abstract
The utility model provides a kind of infrared receiver chip circuit, including infrared induction diode and chip interior system；The chip interior system includes the input terminal being sequentially connected electrically, reflection of electromagnetic wave unit, prime amplifier, gain variable amplifier, bandpass filter, comparator, integrator, Schmidt trigger, the first transistor, output end and the automatic gain control unit being connected between the output of comparator and the input of gain variable amplifier；The gate terminal of the first transistor is connected to the output of the Schmidt trigger, and source terminal is connected to ground terminal, and drain electrode is connected to the output end and the drain electrode of the first transistor is connected to power end by the piezoresistance of series connection one.The utility model also provides a kind of infrared receiver system including the infrared receiver chip circuit.Compared with the relevant technologies, the infrared receiver chip circuit and infrared receiver system rejection to disturbance of the utility model be strong, good reliability and accuracy are high.
Description
Technical field
The utility model relates to chip technology field more particularly to a kind of infrared receiver chip circuits and infrared receiver
System.
Background technique
With the development of information age, various wireless telecommunications become mainstream.Infrared receiver chip circuit be wherein without
The received major part of signal in line communication.
It is to read comparator by automatic growth control module to export in the infrared receiver chip circuit of the relevant technologies
Digital signal simultaneously judges whether it is noise or useful signal.The infrared receiver chip circuit is in external interference signal intensity ratio
When weaker, especially Electromagnetic Interference, interference signal will not generate larger wave distortion in the infrared receiver chip
In the case of, the bandpass filter of the infrared receiver chip interior can effectively filter out most interference signal.
But when external interference signals intensity is stronger, will lead to signal, portion's amplifier chain road waveforms amplitude is excessive in the chip,
Lead to wave distortion.And wave distortion can generate harmonic wave low frequency component, part low frequency component can fall in the infrared receiver core
In the bandpass range of piece circuit, and then cause the output end of the infrared receiver chip circuit noise occur and accidentally export, increases letter
Number transmission error rates.
Therefore, it is really necessary to provide the new infrared receiver chip circuit of one kind and infrared receiver system to solve above-mentioned ask
Topic.
Utility model content
For the above the deficiencies in the prior art, the utility model proposes a kind of strong anti-interference performance, good reliability and accurate
The high infrared receiver chip circuit of rate and infrared receiver system.
In order to solve the above-mentioned technical problem, the utility model provides a kind of infrared receiver chip circuit, including is used for
Receiving infrared-ray carrier signal is simultaneously converted into the infrared induction diode of multi-carrier telecommunication number and is used for the carrier wave
The chip interior system that electric signal carries out Signal optimum processing and exports；The chip interior system include be sequentially connected electrically it is defeated
Enter end, reflection of electromagnetic wave unit, prime amplifier, gain variable amplifier, bandpass filter, comparator, integrator, Schmidt's touching
Hair device, the first transistor, output end and be connected to the comparator output and the input of the gain variable amplifier it
Between automatic gain control unit；The gate terminal of the first transistor is connected to the output of the Schmidt trigger, described
The source terminal of the first transistor is connected to ground terminal, and the drain electrode of the first transistor is connected to the output end and described first
The drain electrode of transistor crosses piezoresistance by series connection one and is connected to power end；The reflection of electromagnetic wave unit is for receiving the carrier wave
Electric signal, and Electromagnetic Interference signal reflex processing is carried out to the multi-carrier telecommunication number.
Preferably, the reflection of electromagnetic wave unit includes first resistor, second resistance, 3rd resistor, the 4th resistance, the 5th
Resistance, the 6th resistance, the 7th resistance, first capacitor, the second capacitor, third capacitor, the 4th capacitor, the 5th capacitor and second are brilliant
Body pipe；
The first end of the first resistor is connected to the output of the infrared induction diode, and the of the first resistor
Two ends are respectively connected to the first end of the second resistance and the first end of the 3rd resistor；
The second end of the second resistance is respectively connected to the first end of the 5th resistance and the first end of the second capacitor；
The second end of the 3rd resistor be respectively connected to the first end of the 4th resistance, the 6th resistance first
The first end of end and the first capacitor；
The second end of 4th resistance is connected to the source terminal of the second transistor；
The second end of 5th resistance be respectively connected to the second end of the 7th resistance, the first capacitor second
The first end at end, the second end of the third capacitor and the 5th capacitor；
The second end of 6th resistance be separately connected the first end of the 7th resistance, second capacitor second
End, the first end of the third capacitor, the first end of the 4th capacitor；
The second end of 4th capacitor is connected to the positive input terminal of the prime amplifier, the second end of the 5th capacitor
It is connected to the negative input end of the prime amplifier；
The drain electrode end of the second transistor is connected to power end, and the gate terminal of the second transistor is connected to described
The drain electrode end of two-transistor.
Preferably, the first transistor and the second transistor are NMOS transistor.
Preferably, the infrared receiver chip circuit further includes that gain inhibits unit, and the gain inhibits unit connection
Between the gain variable amplifier and the bandpass filter, for will be through the gain variable amplifier treated institute
It states multi-carrier telecommunication number and carries out wave distortion gain inhibition processing.
Preferably, it includes the 8th resistance, the 6th capacitor, third transistor, the 4th transistor, that the gain, which inhibits unit,
Five transistors, the 6th transistor and the 7th transistor；
The source electrode of the source terminal of the third transistor, the source terminal of the 6th transistor and the 7th transistor
End is respectively connected to the positive output end of the gain variable amplifier；
Source terminal, the source terminal of the 5th transistor, the source terminal of the 7th transistor of 4th transistor
And the negative terminal of the 6th capacitor is respectively connected to the negative output terminal of the gain variable amplifier；
The gate terminal of the third transistor is respectively connected to the drain electrode end of the third transistor, the 6th transistor
Gate terminal, the gate terminal of the drain electrode end of the 4th transistor, the 4th transistor；
The drain electrode end of 6th transistor is respectively connected to the gate terminal of the 5th transistor, the 5th transistor
Drain electrode end and the 8th resistance first end；
The second end of 8th resistance is respectively connected to the positive terminal and the 7th transistor of the 6th capacitor
Gate terminal；
The source terminal of 7th transistor and the drain electrode end of the 7th transistor are respectively connected to the bandpass filtering
The input of device.
Preferably, the third transistor and the 6th transistor are PMOS transistor；4th transistor, institute
Stating the 5th transistor and the 7th transistor is NMOS transistor.
The utility model also provides a kind of infrared receiver system, including above-mentioned infrared receiver provided by the utility model
Chip circuit.
Compared with the relevant technologies, the infrared receiver chip circuit and infrared receiver system of the utility model pass through in institute
Reflection of electromagnetic wave unit is added in the front end for stating prime amplifier, receives the multi-carrier telecommunication number simultaneously by the reflection of electromagnetic wave unit
Electromagnetic Interference signal reflex processing is carried out to the multi-carrier telecommunication number, is effectively reflected into the infrared receiver chip
The Electromagnetic Interference signal of circuit, and then the output of the infrared receiver chip circuit is avoided because external electromagnetic waves signal is dry
It disturbs the problem of output error signal, improves the anti-interference energy of the infrared receiver chip circuit and infrared receiver system
Power, especially anti-electromagnetic wave interference performance, and then increase its reliability and accuracy.In addition, the infrared receiver chip
Circuit also adds the gain between the gain variable amplifier and the bandpass filter and inhibits unit, and being used for will be through institute
It states gain variable amplifier treated that the multi-carrier telecommunication number carries out wave distortion gain inhibition processing, improve from another point of view
The anti-interference ability of the infrared receiver chip circuit and infrared receiver system, especially anti-WIFI interference performance, into
One step improves the Synthetic Anti-jamming and reliability of the infrared receiver chip circuit and infrared receiver system.
Detailed description of the invention
According to the present invention will be described in detail below with reference to the accompanying drawings.By made detailed description in conjunction with the following drawings, this is practical
Novel above-mentioned or otherwise content will be apparent and be easier to understand.In attached drawing：
Fig. 1 is the structural block diagram of the utility model infrared receiver chip circuit；
Fig. 2 is the circuit structure diagram of reflection of electromagnetic wave unit in Fig. 1；
Fig. 3 is the circuit structure diagram that gain inhibits unit in Fig. 1.
Specific embodiment
The specific embodiment that according to the present invention will be described in detail below with reference to the accompanying drawings.
Specific embodiment/the embodiment recorded herein is the specific specific embodiment of the utility model, for saying
The design of bright the utility model, be it is explanatory and illustrative, should not be construed as to the utility model embodiment and this reality
With the limitation of novel range.In addition to the embodiment recorded herein, those skilled in the art can also be based on the claim of this application
Using obvious other technical solutions, these technical solutions include using to remembering herein for book and specification disclosure of that
The technical solution for making any obvious substitutions and modifications of the embodiment of load, all the protection scope of the utility model it
It is interior.
Shown in Figure 1, the utility model provides a kind of infrared receiver chip circuit 100, and the utility model mentions
Supplied a kind of infrared receiver chip circuit 100, including infrared induction diode 1 and with the infrared induction diode 1
The chip interior system 2 of electrical connection.
The infrared induction diode 1 is for receiving infrared-ray carrier signal and is converted into multi-carrier telecommunication number.Institute
Chip interior system 2 is stated for the multi-carrier telecommunication number to be carried out Signal optimum processing and is exported.
Specifically, the chip interior system 2 include the input terminal IN being sequentially connected electrically, it is reflection of electromagnetic wave unit 21, pre-
Amplifier (Pre-amplifier, Pre-amp) 22, gain variable amplifier (variable gain amplifier, VGA)
23, gain inhibits unit 24, bandpass filter (band pass filter, BPF) 25, comparator (Comparator) 26, product
Divide device (Integrator) 27, Schmidt trigger (Schmitt trigger) 28, the first transistor M1, output end OUT, with
And it is connected to the automatic gain control unit between the output of the comparator 26 and the input of the gain variable amplifier 23
(Automatic gain control, AGC) 29.
The gate terminal of the first transistor M1 is connected to the output of the Schmidt trigger 28, the first transistor
The source terminal of M1 is connected to ground terminal GND, and the drain electrode of the first transistor M1 is connected to the output end OUT and described
The drain electrode of one transistor M1 crosses piezoresistance R by series connection one and is connected to power end VDD.
It should be noted that the input terminal IN, the prime amplifier 22, the gain variable amplifier 23, the band
It is bandpass filter 25, the comparator 26, the integrator 27, the Schmidt trigger 28, the first transistor M1, described
The signal that the infrared receiver chip circuit 100 can be realized in output end OUT and the automatic gain control unit 29 connects
Receipts and emission function.And it is described infrared in order to effectively improve that the reflection of electromagnetic wave unit 21 and the gain, which inhibit unit 24,
The anti-interference ability of line receiving chip circuit 100 keeps its reliability more excellent, and accuracy is higher.
Wherein, the reflection of electromagnetic wave unit 21 can reflect most of interference signal, especially Electromagnetic Interference signal；And
The gain inhibits unit 24 that can then filter out most of interference signal and inhibits the amplification output of part interference signal, especially
It is to filter out WIFI interference signal.
That is, in the infrared receiver chip circuit 100 of the utility model, in order to realize its anti-interference ability and letter
Number accuracy, can only add the reflection of electromagnetic wave unit 21 or only add the gain and inhibit unit 24, or increase simultaneously
If the reflection of electromagnetic wave unit 21 and the gain inhibit unit 24, these three schemes can solve the utility model and refer to
The technical issues of.
In present embodiment, for adding the reflection of electromagnetic wave unit 21 and the gain simultaneously and inhibit unit 24 into
Row is described in detail.
The 1 receiving infrared-ray carrier signal of infrared induction diode is simultaneously converted into multi-carrier telecommunication number.It is described defeated
Enter to hold IN to receive the multi-carrier telecommunication number and be delivered to the reflection of electromagnetic wave unit 21, the reflection of electromagnetic wave unit 21 receives
After the multi-carrier telecommunication number, and Electromagnetic Interference signal reflex processing is carried out to the multi-carrier telecommunication number.
Incorporated by reference to shown in Figure 2, specifically, the reflection of electromagnetic wave unit 21 includes first resistor R1, second resistance
R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, first capacitor C1, the second capacitor
C2, third capacitor C3, the 4th capacitor C4, the 5th capacitor C5 and second transistor M2.
The first end of the first resistor R1 is connected to the output of the infrared induction diode 1, the first resistor
The second end of R1 is respectively connected to the first end of the second resistance R2 and the first end of the 3rd resistor R3；Second electricity
The second end of resistance R2 is respectively connected to the first end of the 5th resistance R5 and the first end of the second capacitor C2；The 3rd resistor
The second end of R3 is respectively connected to the first end of the 4th resistance R4, the first end of the 6th resistance R6 and described
The first end of one capacitor C1；The second end of the 4th resistance R4 is connected to the source terminal of the second transistor M2；Described
The second end of five resistance R5 is respectively connected to the second end of the 7th resistance R7, second end of the first capacitor C1, described
The first end of the second end of third capacitor C3 and the 5th capacitor C5；The second end of the 6th resistance R6 is separately connected
The first end of the 7th resistance R7, the second end of the second capacitor C2, the first end of the third capacitor C3, the described 4th
The first end of capacitor C4；The second end of the 4th capacitor C4 is connected to the positive input terminal of the prime amplifier 22, and the described 5th
The second end of capacitor C5 is connected to the negative input end of the prime amplifier 22；The drain electrode end of the second transistor M2 is connected to electricity
Source VDD, the gate terminal of the second transistor M2 are connected to the drain electrode end of the second transistor M2.
In present embodiment, specifically, the first transistor M1 and the second transistor M2 are NMOS crystal
Pipe.
Shown in Figure 1 continuing with combining, treated through the reflection of electromagnetic wave unit 21 for 22 pairs of the prime amplifier
The multi-carrier telecommunication number carries out pre-amplification processing.
Treated that the multi-carrier telecommunication number amplifies through the prime amplifier 22 for 23 pairs of the gain variable amplifier
Processing.
The gain inhibit unit 24 will through the gain variable amplifier 23 treated that the multi-carrier telecommunication number carries out
Wave distortion gain inhibition processing.
Incorporated by reference to shown in Figure 3, specifically, it includes the 8th resistance R8, the 6th capacitor that the gain, which inhibits unit 24,
C6, third transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6 and the 7th transistor M7.
The source terminal of the third transistor M3, the source terminal of the 6th transistor M6 and the 7th transistor M7
Source terminal be respectively connected to the positive output end of the gain variable amplifier 23；The source terminal of the 4th transistor M4, institute
The source terminal, the source terminal of the 7th transistor M7 and the negative terminal of the 6th capacitor C6 for stating the 5th transistor M5 connect respectively
It is connected to the negative output terminal of the gain variable amplifier 23；The gate terminal of the third transistor M3 is respectively connected to the third
The drain electrode end of transistor M3, the gate terminal of the 6th transistor M6, the drain electrode end of the 4th transistor M4 and described
The gate terminal of four transistor M4；The drain electrode end of the 6th transistor M6 is respectively connected to the grid of the 5th transistor M5
It holds, the first end of the drain electrode end of the 5th transistor M5 and the 8th resistance R8；The second end of the 8th resistance R8
It is respectively connected to the positive terminal of the 6th capacitor C6 and the gate terminal of the 7th transistor M7；The 7th transistor M7's
The drain electrode end of source terminal and the 7th transistor M7 are respectively connected to the input of the bandpass filter 25.
It should be noted that be related in the description at the both ends of the electronic components such as resistance, capacitor in present embodiment, if
For the component there are positive and negative polarity, then it is negative pole end that first end, which is positive terminal, second end,；If not distinguishing positive and negative polarity,
First end and second end is successively then defined as according to the flow direction of electric signal, to facilitate description.
In present embodiment, more preferably, the third transistor M3 and the 6th transistor M6 are PMOS crystal
Pipe；The 4th transistor M4, the 5th transistor M5 and the 7th transistor M7 are NMOS transistor.
Continuing with shown in ginseng Fig. 1, that treated is described through the gain variable amplifier 23 for 25 pairs of the bandpass filter
Multi-carrier telecommunication number is filtered.It should be noted that because the gain inhibits the setting of unit 24, at this point, the band logical
Filter 25 is then to receive to inhibit unit 24 to carry out wave distortion gain through the gain to inhibit treated the multi-carrier telecommunication
Number and it is filtered.
Treated that the multi-carrier telecommunication number carries out digital signal turns through the bandpass filter 25 for 26 pairs of the comparator
Change processing.
The automatic gain control unit 29 judge through the comparator 26 treated the multi-carrier telecommunication number whether be
Interference noise simultaneously feeds back to the gain variable amplifier 23, to control the gain output of the gain variable amplifier 23.
The integrator 27 will treated that the multi-carrier telecommunication number carries out reduction treatment through the comparator 26.
Treated that the multi-carrier telecommunication number carries out integer processing through the integrator 27 for 28 pairs of the Schmidt trigger.
The first transistor M1 is to through the Schmidt trigger 28, treated that the multi-carrier telecommunication number amplifies
And it is defeated out.
The output end OUT then receives after the first transistor M1 treated the multi-carrier telecommunication number that its is defeated
Out, to realize the output of the infrared receiver chip circuit 100.
It is further illustrated below from integrated circuit：
The infrared induction diode 1 receives the infra-red carrier signal comprising useful signal (echo signal) and will
It is converted to the input terminal IN that multi-carrier telecommunication number is input to the chip interior system 2.
When the input terminal IN of chip interior system 2 is there are when strong electromagnetic wave interference signal, the reflection of electromagnetic wave list
First 21 adjustable spontaneous impedance matchings, reflect back Electromagnetic Interference signal largely, without portion's system 2 in the chip
Amplifier chain road generate harmonic distortion, influence useful signal (echo signal) reception.Then, reflection of electromagnetic wave unit 21 exports
Multi-carrier telecommunication number containing useful information is amplified by the prime amplifier 22 and the gain variable amplifier 23, then
It is filtered by the bandpass filter 25, digital signal is then converted to by the comparator 26, using the product
Point device 27 restores the useful signal in the multi-carrier telecommunication number, finally by 28 integer of Schmidt trigger and
The output end OUT is output to by the first transistor M1 (NMOS transistor) and the amplification of piezoresistance R excessively.
In the chip interior system 2, the automatic gain control unit 29 can read the load that the comparator 26 exports
The digital signal of wave electric signal and judge that the signal is useful signal or ambient light interference noise, and anti-based on the judgement
It is fed to the gain variable amplifier 23, to control the gain of the gain variable amplifier 23, keeps noise suppressed and useful
Signal can be amplified to output.
Due to the setting of the reflection of electromagnetic wave unit 21, when there are larger electricity for the infrared receiver chip circuit 100
When magnetic wave interference signal, which can be produced to avoid high-frequency signal in 25 input node of bandpass filter
Raw amplitude saturation distortion, to avoid generating low-frequency disturbance component, so that the infrared receiver chip circuit 100 is not outer
Portion's strong electromagnetic wave interference signal is influenced, and is improved its reliability and is claimed accurate performance.
The principle of the reflection of electromagnetic wave unit 21 is as follows：For effectively inhibit electromagnetic wave radiation and conduction and high order it is humorous
Wave adjusts the reflection coefficient S11 that the reflection of electromagnetic wave unit 21 inputs, so that electromagnetism using Maxwell's EM theory
The S11 value of interference signal is larger, so that the input matching of electromagnetic interference signal is very poor, most of electromagnetic interference signal is all
It can reflect away, without entering inside the infrared receiver chip circuit 100.It avoids interfering due to external strong electromagnetic wave
Signal and the input of the bandpass filter 25 generate low-frequency disturbance component, avoid the infrared receiver chip circuit 100
Mistake output is generated under external strong electromagnetic wave interference signal, i.e., high degree improves the infrared receiver chip circuit
100 anti-interference, especially electromagnetism interference (EMI) ability.
In addition, inhibiting 24 explanation of unit in conjunction with the gain：
Multi-carrier telecommunication number is input to the infrared receiver chip circuit 100, passes through the prime amplifier 22 and the increasing
Beneficial variable amplifier 23 amplifies.The gain inhibits load of the unit 24 as the gain variable amplifier 23, works as institute
When stating the amplitude slight saturation distortion of excessive generation of 23 output signal of gain variable amplifier, the gain inhibits unit 24 can be with
Adjusting spontaneous impedance reduces and maintains a period of time, declines the amplitude of 23 output signal of gain variable amplifier, emulates
The serious saturation distortion of its amplitude.Then the gain inhibits 24 output signal of unit to be filtered by the bandpass filter 25
Wave, then digital signal is converted to by the comparator 26, using the integrator 27 by useful signal in multi-carrier telecommunication number
It restores, last 28 integer of Schmidt trigger and process the first transistor M1 and the amplification of piezoresistance R excessively are output to institute
State output end OUT.In the infrared receiver chip circuit 100, the automatic gain control unit 29 can read the comparison
The digital signal of the multi-carrier telecommunication number of the output of device 26 and judge the signal for useful signal or ambient light interference noise, and
And the gain variable amplifier 23 is fed back to based on the judgement, to control the gain of the gain variable amplifier 23, make to make an uproar
Sound is suppressed and useful signal can be amplified to output.
Since the gain inhibits the setting of unit 24, there are larger WIFI outside infrared ray receiving chip circuit 100
When interference signal, which inhibits unit 24 that can produce to avoid high-frequency signal in the input node of the bandpass filter 25
Raw amplitude saturation distortion, to avoid generating low-frequency disturbance component, so that the infrared receiver chip circuit 100 is not outer
The strong WIFI interference signal in portion is influenced.
The gain inhibits the principle of unit 24 as follows：When 23 output amplitude of gain variable amplifier is more than described the
The sum of three transistor M3 threshold voltages and the 4th transistor M4 threshold voltage, the third transistor M3 and the 4th transistor
The two MOS transistors of M4 will be opened, and work in sub-threshold region.23 output signal of gain variable amplifier produces at this time
Raw slight saturation distortion.The third transistor M3 generates electric current and flows to its drain electrode end from its source terminal, which is mirrored onto
In its M6 of 6th transistor and the 5th transistor M5, increase the drain-to-gate voltage of the 5th transistor M5.It is described
The drain-to-gate voltage of 5th transistor M5 gives the 7th transistor after the 8th resistance R8 and the 6th capacitor C6 filtering
M7 opens the 7th transistor M7, and reduces equivalent between the positive-negative output end of the gain variable amplifier 23
Resistance avoids saturation distortion to reduce its output amplitude.Due to the 8th resistance R8 and the 6th capacitor C6 RC when
Between constant be generally 5ms, therefore equivalent conduction impedance set by the 7th transistor M7 can maintain a period of time.
The gain inhibits the setting of unit 24, so that the infrared receiver chip circuit 100 is in the bandpass filtering
The input of device 25 will not generate waveform saturation distortion because of external strong WIFI interference signal.To avoid generating low-frequency disturbance point
Amount, so that the infrared receiver chip circuit 100 is not influenced by external strong WIFI interference signal.
And in the infrared receiver chip circuit 100 of the utility model, present embodiment increases institute simultaneously in the circuit
It states reflection of electromagnetic wave unit 21 and the gain inhibits unit 24, so that the anti-interference ability of infrared receiver chip circuit 100
It is stronger, better reliability, and accuracy rate is higher.
The utility model also provides a kind of infrared receiver system (not shown), including provided by the utility model above-mentioned red
Outside line receiving chip circuit.
Compared with the relevant technologies, the infrared receiver chip circuit and infrared receiver system of the utility model pass through in institute
Reflection of electromagnetic wave unit is added in the front end for stating prime amplifier, receives the multi-carrier telecommunication number simultaneously by the reflection of electromagnetic wave unit
Electromagnetic Interference signal reflex processing is carried out to the multi-carrier telecommunication number, is effectively reflected into the infrared receiver chip
The Electromagnetic Interference signal of circuit, and then the output of the infrared receiver chip circuit is avoided because external electromagnetic waves signal is dry
It disturbs the problem of output error signal, improves the anti-interference energy of the infrared receiver chip circuit and infrared receiver system
Power, especially anti-electromagnetic wave interference performance, and then increase its reliability and accuracy.In addition, the infrared receiver chip
Circuit also adds the gain between the gain variable amplifier and the bandpass filter and inhibits unit, and being used for will be through institute
It states gain variable amplifier treated that the multi-carrier telecommunication number carries out wave distortion gain inhibition processing, improve from another point of view
The anti-interference ability of the infrared receiver chip circuit and infrared receiver system, especially anti-WIFI interference performance, into
One step improves the Synthetic Anti-jamming and reliability of the infrared receiver chip circuit and infrared receiver system.
It should be noted that each embodiment above by reference to described in attached drawing is only to illustrate the utility model rather than limits
The scope of the utility model processed, those skilled in the art should understand that, in the spirit and model for not departing from the utility model
The modification or equivalent replacement carried out under the premise of enclosing to the utility model, should all cover within the scope of the utility model.
In addition, signified outer unless the context, the word occurred in the singular includes plural form, and vice versa.In addition, except non-specifically
Illustrate, then any embodiment all or part of in combination with any other embodiment all or part of come using.
Claims (7)
1. a kind of infrared receiver chip circuit, including for receiving infrared-ray carrier signal and it is converted into multi-carrier telecommunication number
Infrared induction diode and for will the multi-carrier telecommunication number carry out Signal optimum processing and export chip interior system
System, which is characterized in that the chip interior system include the input terminal being sequentially connected electrically, reflection of electromagnetic wave unit, prime amplifier,
Gain variable amplifier, bandpass filter, comparator, integrator, Schmidt trigger, the first transistor, output end and company
The automatic gain control unit being connected between the output of the comparator and the input of the gain variable amplifier；Described first
The gate terminal of transistor is connected to the output of the Schmidt trigger, and the source terminal of the first transistor is connected to ground connection
End, the drain electrode of the first transistor is connected to the output end and the drain electrode of the first transistor crosses piezoelectricity by series connection one
Resistance is connected to power end；The reflection of electromagnetic wave unit for receiving the multi-carrier telecommunication number, and to the multi-carrier telecommunication number into
Row Electromagnetic Interference signal reflex processing.
2. infrared receiver chip circuit according to claim 1, which is characterized in that the reflection of electromagnetic wave unit includes
First resistor, second resistance, 3rd resistor, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, first capacitor, second
Capacitor, third capacitor, the 4th capacitor, the 5th capacitor and second transistor；
The first end of the first resistor is connected to the output of the infrared induction diode, the second end of the first resistor
It is respectively connected to the first end of the second resistance and the first end of the 3rd resistor；
The second end of the second resistance is respectively connected to the first end of the 5th resistance and the first end of the second capacitor；
The second end of the 3rd resistor be respectively connected to the first end of the 4th resistance, the first end of the 6th resistance with
And the first end of the first capacitor；
The second end of 4th resistance is connected to the source terminal of the second transistor；
The second end of 5th resistance be respectively connected to the second end of the 7th resistance, the second end of the first capacitor,
The first end of the second end of the third capacitor and the 5th capacitor；
The second end of 6th resistance is separately connected the first end of the 7th resistance, the second end of second capacitor, institute
State the first end of third capacitor, the first end of the 4th capacitor；
The second end of 4th capacitor is connected to the positive input terminal of the prime amplifier, the second end connection of the 5th capacitor
To the negative input end of the prime amplifier；
The drain electrode end of the second transistor is connected to power end, and it is brilliant that the gate terminal of the second transistor is connected to described second
The drain electrode end of body pipe.
3. infrared receiver chip circuit according to claim 2, which is characterized in that the first transistor and described
Two-transistor is NMOS transistor.
4. infrared receiver chip circuit according to claim 1, which is characterized in that the infrared receiver chip circuit
Further include that gain inhibits unit, the gain inhibit unit be connected to the gain variable amplifier and the bandpass filter it
Between, for will treated that the multi-carrier telecommunication number carries out wave distortion gain inhibition processing through the gain variable amplifier.
5. infrared receiver chip circuit according to claim 4, which is characterized in that it includes that the gain, which inhibits unit,
Eight resistance, the 6th capacitor, third transistor, the 4th transistor, the 5th transistor, the 6th transistor and the 7th transistor；
The source terminal of the source terminal of the third transistor, the source terminal of the 6th transistor and the 7th transistor point
It is not connected to the positive output end of the gain variable amplifier；
The source terminal of 4th transistor, the source terminal of the 5th transistor, the source terminal of the 7th transistor and
The negative terminal of 6th capacitor is respectively connected to the negative output terminal of the gain variable amplifier；
The gate terminal of the third transistor is respectively connected to the grid of the drain electrode end of the third transistor, the 6th transistor
Extremely, the gate terminal of the drain electrode end of the 4th transistor, the 4th transistor；
The drain electrode end of 6th transistor is respectively connected to the leakage of the gate terminal, the 5th transistor of the 5th transistor
The first end of extreme and described 8th resistance；
The second end of 8th resistance is respectively connected to the positive terminal of the 6th capacitor and the grid of the 7th transistor
End；
The source terminal of 7th transistor and the drain electrode end of the 7th transistor are respectively connected to the bandpass filter
Input.
6. infrared receiver chip circuit according to claim 5, which is characterized in that the third transistor and described
Six transistors are PMOS transistor；4th transistor, the 5th transistor and the 7th transistor are
NMOS transistor.
7. a kind of infrared receiver system, which is characterized in that including infrared receiver as claimed in any one of claims 1 to 6
Chip circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820707319.1U CN208174687U (en) | 2018-05-11 | 2018-05-11 | Infrared receiver chip circuit and infrared receiver system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820707319.1U CN208174687U (en) | 2018-05-11 | 2018-05-11 | Infrared receiver chip circuit and infrared receiver system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208174687U true CN208174687U (en) | 2018-11-30 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820707319.1U Active CN208174687U (en) | 2018-05-11 | 2018-05-11 | Infrared receiver chip circuit and infrared receiver system |
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| Country | Link |
|---|---|
| CN (1) | CN208174687U (en) |
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2018
- 2018-05-11 CN CN201820707319.1U patent/CN208174687U/en active Active
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Effective date of registration: 20200513 Address after: 361101 room a, 13th floor, building 2, No. 1888, Hongxiang West Road, Xiang'an District, Xiamen City, Fujian Province Patentee after: XIAMEN SILICON ELECTRONIC Co.,Ltd. Address before: 518000 Tailing Building 903, 5022 Fifth Avenue, Bantian Street, Longgang District, Shenzhen City, Guangdong Province Patentee before: SILICTEC (SHENZHEN) ELECTRONIC TECHNOLOGY Co.,Ltd. |
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