CN114844470A - Low-noise amplifier and chip - Google Patents
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- CN114844470A CN114844470A CN202210309131.2A CN202210309131A CN114844470A CN 114844470 A CN114844470 A CN 114844470A CN 202210309131 A CN202210309131 A CN 202210309131A CN 114844470 A CN114844470 A CN 114844470A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention discloses a low noise amplifier and a chip, wherein the amplifier comprises: the connecting point of the first capacitor and the third inductor is connected with one end of the first inductor; the source electrode of the first transistor is grounded through the second inductor, and the drain electrode of the first transistor is connected with the source electrode of the second transistor; the first inductor and the second inductor form a first transformer; the drain electrode of the second transistor is connected to a power supply through a fifth inductor, and the drain electrode of the second transistor is connected with the grid electrode of the third transistor; the source electrode of the third transistor is grounded through a seventh inductor, and the drain electrode of the third transistor is connected with the source electrode of the fourth transistor through an eighth inductor; the fifth inductor and the seventh inductor form a second transformer; the drain electrode of the fourth transistor is connected to the power supply through a ninth inductor; the eighth inductor and the ninth inductor constitute a third transformer. The invention realizes the broadband low-noise amplifier on the millimeter wave frequency band based on the transformer coupling structure, effectively reduces the area of the circuit, and can be widely applied to the technical field of semiconductors.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a low-noise amplifier and a chip.
Background
With the rapid development of wireless communication technology, higher requirements are put on the performance of the communication system, such as data transmission rate, transmission bandwidth, efficiency, and the like. The fifth generation mobile communication technology (5G) has attracted more and more attention of researchers in recent years due to its characteristics of high speed, low delay, large bandwidth, and the like. The 5G communication frequency band mainly includes a Sub 6GHz frequency band and a millimeter wave frequency band of low frequency. The former has quite crowded frequency band resources, while the latter has abundant spectrum resources, which can provide larger bandwidth and capacity for the communication system. The front-end link of the radio frequency receiver needs an amplifier with enough gain to amplify the signal received by the antenna, and has strict requirements on the noise coefficient of the amplifier; this amplifier is known as a Low Noise Amplifier (LNA), the performance of which is decisive for the signal-to-noise ratio of the overall receiving system. On the premise of meeting the requirement of noise, the amplifier with the broadband characteristic is more popular than a narrow band, can be simultaneously applied to a plurality of working frequency bands, and improves the availability of the circuit. Therefore, research on a broadband low noise amplifier applied to a 5G millimeter wave system is receiving much attention.
In order to realize the broadband performance of the low noise amplifier in the millimeter wave working environment, the existing first scheme provides a low noise amplifier based on a three-order distributed structure, and the principle is to use an inductor or a transmission line to resonate with a parasitic capacitor, and add and output gains of all stages. The circuit comprises a three-order distributed structure, each order of gain resonance is enabled to be on different frequencies by using inductance or transmission line and parasitic capacitance resonance, and finally, the gain of each order is added and output to obtain a broadband gain characteristic. This method can achieve very wide bandwidth performance, but it has the disadvantages of large power consumption, high noise, and large area.
In the second scheme of the prior art, a multi-stage LC matching network is used for realizing broadband matching, and although the method is simple in design and easy to realize, the method needs more inductors, so that the chip area is overlarge, the cost is higher, and the realization in the chip is not easy.
The existing third scheme proposes to use a feedback resistor for broadband matching, and the structure can make the input impedance of the circuit lower and is easy to match. At the same time, however, the feedback resistor also introduces additional noise, degrading the noise figure performance of the amplifier.
Disclosure of Invention
To solve at least some of the problems in the prior art, it is an object of the present invention to provide a low noise amplifier and a chip.
The technical scheme adopted by the invention is as follows:
a low noise amplifier, comprising:
the radio frequency input end of the first transistor is connected with a grid electrode of the first transistor after sequentially passing through the first capacitor and the third inductor, a connecting point of the first capacitor and the third inductor is connected with one end of the first inductor, and the other end of the first inductor is connected with a first bias voltage; the source electrode of the first transistor is grounded through the second inductor, and the drain electrode of the first transistor is connected with the source electrode of the second transistor; the first inductor and the second inductor form a first transformer;
the drain electrode of the second transistor is connected to a power supply through a fifth inductor, the grid electrode of the second transistor is connected to the power supply through a first resistor, and the drain electrode of the second transistor is connected with the grid electrode of the third transistor;
the source electrode of the third transistor is grounded through a seventh inductor, and the drain electrode of the third transistor is connected with the source electrode of the fourth transistor through an eighth inductor; the fifth inductor and the seventh inductor form a second transformer;
a fourth transistor, a drain of which is connected to the power supply through a ninth inductor, and a gate of which is connected to the power supply through a tenth inductor; the eighth inductor and the ninth inductor form a third transformer; the drain electrode of the fourth transistor is used as a radio frequency output end.
Further, the low noise amplifier further comprises a fourth inductor connected between the drain of the first transistor and the source of the second transistor.
Further, the low noise amplifier further comprises a second capacitor and a sixth inductor, and the second capacitor and the sixth inductor are connected in series between the drain of the second transistor and the gate of the third transistor.
Further, the low noise amplifier further comprises a bypass capacitor, and the gate of the second transistor is grounded through the bypass capacitor.
Further, the substrates of the first transistor, the second transistor, the third transistor and the fourth transistor are all grounded through substrate isolation resistors.
Furthermore, the low noise amplifier further comprises a second resistor, one end of the second resistor is connected with the gate of the third transistor, and the other end of the second resistor is connected with a second bias voltage.
The other technical scheme adopted by the invention is as follows:
a communication chip comprising a low noise amplifier as described above.
The beneficial effects of the invention are: the invention realizes the broadband low-noise amplifier on the millimeter wave frequency band based on the transformer coupling structure, effectively reduces the area of the circuit and saves the cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description is made on the drawings of the embodiments of the present invention or the related technical solutions in the prior art, it should be understood that the drawings in the following description are only for convenience and clarity of describing some embodiments in the technical solutions of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is an electrical circuit diagram of a low noise amplifier in an embodiment of the present invention;
FIG. 2 is a schematic diagram of conventional narrowband input matching;
FIG. 3 is a schematic diagram of broadband input matching based on gate-source transformer coupling;
FIG. 4 is a schematic diagram of wideband input matching as proposed in an embodiment of the present invention;
FIG. 5 is a schematic diagram of the S parameter of a low noise amplifier according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the noise figure of a low noise amplifier according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of the stability factor of a low noise amplifier according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention and are not to be construed as limiting the present invention. The step numbers in the following embodiments are provided only for convenience of illustration, the order between the steps is not limited at all, and the execution order of each step in the embodiments can be adapted according to the understanding of those skilled in the art.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a plurality of means is one or more, the meaning of a plurality of means is two or more, and larger, smaller, larger, etc. are understood as excluding the number, and larger, smaller, inner, etc. are understood as including the number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
As shown in fig. 1, the present embodiment provides a low noise amplifier, including:
first transistor M 1 The radio frequency input end passes through the first capacitor C in sequence 1 A third inductor L 3 Rear and first transistor M 1 Is connected to the first capacitor C 1 And a third inductance L 3 And the first inductor L 1 Is connected to the first inductor L 1 Is connected with a first bias voltage V b1 (ii) a First transistor M 1 Through a second inductor L 2 Grounded, first transistor M 1 And the second transistor M 2 Is connected to the source of (a); first inductance L 1 And a second inductance L 2 Form a first transformer T 1 ；
Second transistor M 2 Second transistor M 2 Through a fifth inductor L 5 Connected to a power supply, a second transistor M 2 Is passed through a first resistor R 1 Connected to a power supply, a second transistor M 2 And the third transistor M 3 The gate of (1) is connected;
third transistor M 3 A third transistor M 3 Through a seventh inductor L 7 Grounded, third transistor M 3 Through an eighth inductor L 8 And a fourth transistor M 4 Is connected to the source of (a); fifth inductance L 5 And a seventh inductance L 7 Form a second transformer T 2 ；
Fourth transistor M 4 Fourth transistor M 4 Drain electrode of (2) through a ninth inductor L 9 Connected to a power supply, a fourth transistor M 4 Is passed through a tenth inductor L 10 Connected to a power source; eighth inductance L 8 And a ninth inductance L 9 Form a third transformer T 3 (ii) a Fourth transistor M 4 The drain of which serves as the radio frequency output terminal.
Further as an alternative embodiment, the low noiseThe amplifier further comprises a fourth inductor L 4 Said fourth inductance L 4 Is connected to the first transistor M 1 And the second transistor M 2 Between the source electrodes of (1). Transistor M 1 Drain electrode and M 2 Source electrode is composed of inductor L 4 Connected to each other by an inductance L 4 Where it can resonate with the parasitic capacitance of the device, making the gain flatter in-band. In the same way, the transistor M 3 Drain electrode and M 4 Source electrode is composed of inductor L 8 Connected to each other by an inductance L 8 Where it can resonate with the parasitic capacitance of the device, making the gain flatter in-band.
Further as an optional implementation, the low noise amplifier further comprises a second capacitor C 2 And a sixth inductance L 6 Said second capacitor C 2 And a sixth inductance L 6 Is connected in series to the second transistor M 2 And the third transistor M 3 Between the gates of the transistors. Capacitor C 2 And an inductance L 6 Participate in forming the inter-stage matching network.
Further as an optional implementation, the low noise amplifier further comprises a bypass capacitor C b The second transistor M 2 Is grounded through the bypass capacitor.
Further as an alternative embodiment, the first transistor M 1 A second transistor M 2 A third transistor M 3 And a fourth transistor M 4 The substrates of (1) are all grounded through substrate isolation resistors.
Further as an optional implementation, the low noise amplifier further includes a second resistor R 2 Said second resistance R 2 And a terminal of the third transistor M 3 The second resistor R, the second resistor R 2 And the other end of the first terminal is connected to a second bias voltage.
The low noise amplifier circuit described above is explained in detail below with reference to specific embodiments.
(1) Description of circuit structure
The design circuit of this embodiment is mainly composed of a two-stage cascode structure as shown in fig. 1, and the specific circuit connection is as follows:
radio frequencyThe input terminal passes through a capacitor C 1 And an inductance L 3 And a transistor M 1 Are connected. In the transformer T 1 Middle and high inductance L 1 One terminal and a capacitor C 1 And an inductance L 3 Connected to another end of the DC bias voltage V b1 Connecting; inductor L 2 One end is connected with a transistor M 1 And the other end to ground. Transistor M 1 Drain through inductor L 4 And transistor M 2 Are connected. Transistor M 2 Drain electrode of (2) through a transformer T 2 Inductor L in 5 To a power supply V DD Gate pass resistance R 1 To a power supply V DD Through a bypass capacitor C b To ground. Transistor M 2 Drain electrode and capacitor C 2 Are connected through an inductor L 6 And transistor M 3 Are connected. Resistance R 2 One terminal and transistor M 3 Is connected with the grid electrode of the grid electrode, and the other end of the grid electrode is connected with a direct current bias V b2 Are connected. Inductor M 3 And an inductance L 7 Coupled to form transformer T 2 . Transistor M 3 Drain through inductor L 8 And transistor M 4 Are connected. Transistor M 4 Respectively pass through an inductor L 10 And L 9 And a power supply V DD Are connected. At the same time, the transistor M 4 Through inductor L 8 And L 9 Coupling, inductance L 8 And L 9 Form a transformer T 3 . Transistor M 4 Through a capacitor C 3 To the radio frequency output. Transistor M 1 、M 2 、M 3 And M 4 Respectively through a resistor R b1 、R b2 、R b3 And R b4 And (4) grounding.
(2) Description of the operating principles of the circuits
The millimeter wave broadband low-noise amplifier based on the transformer coupling structure in the embodiment of the invention mainly comprises a two-stage cascode structure.
Broadband input matching
The invention designs a wider input matching network on the basis of the traditional narrow-band input matching and the broadband input matching based on the coupling of the grid-source transformer. The specific analysis is as follows:
FIG. 2 shows a source degeneration common source LNA with narrow band input matching using one gate inductance with input impedance Z in And quality factor Q in1 Comprises the following steps:
in the formula C gs Is a transistor M 1 Gate to source capacitance of (c), ω T Is a transistor M 1 Cutoff frequency of f 0 To match the resonant frequency of the network, Rs is typically 50 Ω.
According to the equation (1), the real part of the input impedance Zin is represented by the source inductance L 2 By adjusting transistor M 1 Gate inductance L of 3 The imaginary part of Zin can be made 0 to achieve 50 ohm matching with the input impedance. However, as can be seen from equation (2), matching using this method can make the figure of merit of the input matching network too high to facilitate broadband input matching.
Fig. 3 is a schematic diagram of a wide-band input-matched source degenerated common-source LNA based on a gate-source transformer coupling structure, wherein the quality factor of an input matching network is as follows:
comparing formulas (2) and (3), it is apparent that Q in2 Ratio Q in1 Small, and is more beneficial to realizing broadband input matching.
Nevertheless, although broadband input matching can be achieved with the input matching structure in fig. 3, its tunable bandwidth is still limited. The present invention therefore contemplates combining the input matching methods of fig. 2 and 3, as shown in fig. 4. In FIG. 3 the gate source transformer coupling matchingOn the basis, one grid inductor is introduced, one more pole can be introduced into the input circuit, so that the pole tuning of the input matching circuit is more flexible, and the adjustable range is larger. Meanwhile, the transistor M in the broadband input matching structure provided by the invention 1 Has a source electrode negative feedback inductor L 2 The optimal input impedance matching and the optimal noise matching can be closer, and the compromise relation between the noise coefficient and the input matching is relieved to a certain extent.
Inductor L 4 And L 8
As shown in FIG. 1, transistor M 1 Drain electrode and M 2 Source electrode is composed of inductor L 4 Connected, transistor M 3 Drain electrode and M 4 Source electrode is composed of inductor L 8 Are connected. Inductor L 4 And L 8 Where it can resonate with the parasitic capacitance of the device, making the gain flatter in-band.
Leakage source transformer feedback
As shown in FIG. 1, the proposed LNA uses two different types of drain-source transformer feedback (T) 2 And T 3 ) The gain control circuit is used for realizing broadband gain and improving the stability of the circuit.
Transformer T 2 By an inductance L 5 And L 7 The overall gain of the circuit can be improved by the positive feedback effect. Meanwhile, the transformer is also used for a common source tube M in a second-stage circuit cascode structure 3 Playing the role of gm-boosting. By raising the transistor M 3 The transconductance of the second-stage circuit is improved, and the noise coefficient performance of the whole circuit is further optimized.
Transformer T 3 By an inductance L 8 And L 9 The structure mainly plays a role in improving the stability of the circuit and enabling the in-band gain to be flatter. Due to the circuit of the invention, the transistor M 4 Using an inductor L for the gate 10 . Inductor L 10 The feedback circuit plays a role of positive feedback, can provide a gain pole for a circuit, and expands the-3 dB bandwidth. But at the same time, positive feedback also deteriorates the stability of the circuit. Therefore, a transformer T is introduced here 3 By passingThe negative feedback action improves the stability of the circuit.
In addition to the above-mentioned structures and devices, the functions of other components in the above-mentioned circuits will be explained as follows: resistance R b1 、R b2 、R b3 And R b4 The resistance values are all 10k omega, the substrate isolation function is realized in the circuit, and the circuit gain can be improved by 0.5-1 dB by introducing the substrate isolation resistor. Capacitor C 1 And C 3 The direct current blocking capacitor is used for isolating direct current signals. Resistance R 1 And R 2 Resistance values of 10k omega, isolation of AC signals, and transistor M 2 And M 3 A gate bias voltage is provided. Capacitor C 2 And an inductance L 6 Participate in forming the inter-stage matching network.
From the above, the wideband LNA is realized on the millimeter wave frequency band mainly based on the transformer coupling structure. Compared with the distributed structure in the first scheme and the multi-stage LC matching network in the second scheme, the transformer has the characteristic of compact area, so that the circuit area is greatly reduced, and the cost is saved. In addition, compared with the prior third scheme in which a feedback resistor is introduced for broadband matching, additional resistor thermal noise is introduced, and the noise coefficient performance is deteriorated, the broadband input matching structure provided by the invention can relieve the compromise problem between the noise coefficient and the input matching to a certain extent. Meanwhile, in general, the transformer Q value of the CMOS process is low, which results in large loss and is not favorable for realizing high gain. The inductor L adopted by the invention 5 And an inductance L 7 Constructed drain-source coupling transformer T 2 This disadvantage can be optimized, the transformer T 2 By raising the transistor M 3 The transconductance of the second stage circuit improves the gain of the second stage circuit, thereby improving the gain of the whole circuit and further reducing the noise coefficient. In addition, using a common-source amplifier as an input stage is one of the common structures of LNAs, because the noise figure of the common-source amplifier is minimal compared to cascode and common-gate amplifiers, but at the same time, it brings about greater power consumption under the same gain. The invention aims at the problem that a cascode structure is adopted in the input stage, and under the same gain,in the introduction of the input matching network of the present invention, how to optimize the noise figure performance is detailed, while having lower power consumption than the conventional common source amplifier as an input stage, and aiming at the problem that the noise figure is higher than that of the common source amplifier.
The low-noise amplifier based on the transformer coupling structure can work in a millimeter wave frequency band and is suitable for a receiver link in a radio frequency front-end system. Referring to FIGS. 5-7, the LNA in the present invention is based on a 65nm CMOS process, and has a 3dB bandwidth of 23.8-49.8GHz, an in-band noise figure of 3.27-5dB, an IIP3 of-6 dBm, a highest gain of 14.8dB, a power consumption of 12mW, and an area of 0.28mm 2 . Fig. 5 is a schematic diagram of an S parameter of the low noise amplifier, fig. 6 is a schematic diagram of a noise coefficient of the low noise amplifier, and fig. 7 is a schematic diagram of a stability coefficient of the low noise amplifier.
In summary, compared with the prior art, the present embodiment has the following advantages and beneficial effects:
1) broadband input matching: the invention provides a novel input matching structure by combining the traditional narrow-band input matching and the wide-band input matching based on the coupling of a grid-source transformer. Compared with a traditional broadband input matching structure coupled by a grid-source transformer, the novel input matching structure provided by the invention has larger bandwidth and more flexible input matching tuning.
2) And (3) reducing power consumption: the invention adopts a two-stage cascode structure, and compared with a common source amplifier and a common gate amplifier, the power consumption of the cascode amplifier is the least under the same gain. At the same time, the drain-source transformer T 2 The gm-boosting effect is achieved on the common source tube in the second-stage cascode structure, the transconductance of the second-stage circuit is improved, and the power consumption of the circuit can be further reduced under the same gain.
3) And (3) stability is improved: the invention is in the transistor M 4 The grid of the grid is connected with an inductor L 10 The inductor can introduce a high-frequency gain pole for the circuit, and the effect of adjusting the gain bandwidth can be realized by tuning the frequency point where the pole is located. However, due to the inductance L 10 The circuit has a positive feedback function, so that the stability of the circuit is poorThe problem is that oscillation is likely to occur. Therefore, the invention provides a drain-source transformer T 3 The negative feedback serves to increase the stability of the circuit.
The present invention also provides a communication chip, which includes the low noise amplifier described above, and therefore has corresponding functions and advantages.
In the foregoing description of the specification, reference to the description of "one embodiment/example," "another embodiment/example," or "certain embodiments/examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. A low noise amplifier, comprising:
the radio frequency input end of the first transistor is connected with a grid electrode of the first transistor after sequentially passing through the first capacitor and the third inductor, a connecting point of the first capacitor and the third inductor is connected with one end of the first inductor, and the other end of the first inductor is connected with a first bias voltage; the source electrode of the first transistor is grounded through the second inductor, and the drain electrode of the first transistor is connected with the source electrode of the second transistor;
the first inductor and the second inductor form a first transformer;
the drain electrode of the second transistor is connected to a power supply through a fifth inductor, the grid electrode of the second transistor is connected to the power supply through a first resistor, and the drain electrode of the second transistor is connected with the grid electrode of the third transistor;
a third transistor with its source connected to ground via a seventh inductor and its drain connected to the ground via an eighth inductor
The source electrode of the fourth transistor is connected; the fifth inductor and the seventh inductor form a second transformer;
a fourth transistor, a drain of which is connected to the power supply through a ninth inductor, and a gate of which is connected to the power supply through a tenth inductor; the eighth inductor and the ninth inductor form a third transformer; the drain electrode of the fourth transistor is used as a radio frequency output end.
2. A low noise amplifier according to claim 1, further comprising a fourth inductor connected between the drain of the first transistor and the source of the second transistor.
3. A low noise amplifier according to claim 1, further comprising a second capacitor and a sixth inductor connected in series between the drain of the second transistor and the gate of the third transistor.
4. A low noise amplifier according to claim 1, further comprising a bypass capacitor, wherein the gate of the second transistor is connected to ground via the bypass capacitor.
5. A low noise amplifier according to claim 1, wherein the substrates of the first transistor, the second transistor, the third transistor and the fourth transistor are all grounded through substrate isolation resistors.
6. The low noise amplifier of claim 1, further comprising a second resistor, wherein one end of the second resistor is connected to the gate of the third transistor, and the other end of the second resistor is connected to a second bias voltage.
7. A communication chip comprising a low noise amplifier according to any one of claims 1 to 6.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116015221A (en) * | 2023-03-24 | 2023-04-25 | 安徽矽磊电子科技有限公司 | Radio frequency amplifier circuit based on negative feedback of transformer |
| CN116073772A (en) * | 2023-03-07 | 2023-05-05 | 华南理工大学 | Ultra-wideband low-noise amplifier and communication equipment |
| CN116073767A (en) * | 2023-03-06 | 2023-05-05 | 华南理工大学 | Differential low-noise amplifier and communication equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116073767A (en) * | 2023-03-06 | 2023-05-05 | 华南理工大学 | Differential low-noise amplifier and communication equipment |
| CN116073767B (en) * | 2023-03-06 | 2023-07-18 | 华南理工大学 | Differential low-noise amplifier and communication equipment |
| CN116073772A (en) * | 2023-03-07 | 2023-05-05 | 华南理工大学 | Ultra-wideband low-noise amplifier and communication equipment |
| CN116015221A (en) * | 2023-03-24 | 2023-04-25 | 安徽矽磊电子科技有限公司 | Radio frequency amplifier circuit based on negative feedback of transformer |
| CN116015221B (en) * | 2023-03-24 | 2023-05-26 | 安徽矽磊电子科技有限公司 | Radio frequency amplifier circuit based on negative feedback of transformer |
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