CN112953419A - Nonlinear cancellation power amplifier based on cascode structure - Google Patents
Nonlinear cancellation power amplifier based on cascode structure Download PDFInfo
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
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Abstract
The invention belongs to the technical field of wireless communication, and provides a cascode-structure-based nonlinear cancellation power amplifier, which is used for solving the problems of poor linearity and poor return loss performance of an output end of the conventional cascode-structure-based power amplifier. The single-ended cascode structure circuit and the nonlinear cancellation circuit are formed, the common-gate tube M3 is added at the middle node of the single-ended cascode structure, the output resistance of the power amplifier is changed to be approximately equal to the optimal load resistance, and the output return loss performance of the device is greatly improved; meanwhile, the non-linear currents of the common-gate tube M3 and the common-source tube M1 in the common-source common-gate structure are mutually offset, so that the linearity of the power amplifier is improved; in addition, the common-gate transistor M3 does not introduce extra power consumption by itself, nor does it degrade the output power of the power amplifier. In conclusion, the nonlinear cancellation power amplifier provided by the invention has higher linearity and better output return loss performance.
Description
Technical Field
The invention belongs to the technical field of wireless communication, relates to a power amplifier in a communication system transmitter, and particularly provides a nonlinear cancellation power amplifier based on a cascode structure.
Background
With the rapid development of wireless communication technology, people put forward a series of requirements on radio frequency transceivers, such as higher frequency, smaller size, lower power consumption, higher reliability, and the like. As a core module in a radio frequency transceiver, the performance of a Power Amplifier (PA) directly affects the quality of signal transmission, and the linearity and return loss at the output end are two key performance indicators. A cascode (cascode) structure is a common structure of a Power Amplifier (PA), and a circuit diagram thereof is shown in fig. 1. The cascode structure has the advantages of high output power and high gain, but also has many problems: firstly, extra nonlinearity is introduced into a common-gate tube superposed on a common-source tube, so that the overall linearity of the common-source and common-gate is deteriorated, and the communication quality is further influenced; secondly, the output resistance of the power amplifier with the cascode structure is overlarge and has a large difference with the resistance value of the optimal load resistor connected with the output end of the power amplifier, so that the power amplifier has poor output return loss; third, impedance mismatch exists at the internal nodes of the cascode structure, which reduces the overall gain.
In order to solve the above problems, researchers have improved the conventional cascode structure, and an improvement method is that an inductor connected in parallel to the ground is added at the place where the cascode tube and the cascode tube are connected, so that the parasitic capacitance and the inductor of the node can form a parallel resonant cavity, thereby preventing the signal from leaking at the node, and further improving the gain, as shown in fig. 2; another improvement method is that a series inductor is inserted at the joint of the common-gate tube and the common-source tube, so that the load impedance seen by the common-source tube is changed from capacitive to inductive, the matching between the common-gate tube and the common-source tube is realized, and finally the gain is improved, as shown in fig. 3.
However, the two improvement methods described above both introduce an inductor, which occupies a large layout area and is not favorable for layout, and also introduce extra loss. In addition, the improved structure only improves the gain of the cascode structure power amplifier, and does not solve the problem that the cascode structure power amplifier has poor linearity and output end return loss. The linearity of the power amplifier directly influences the communication quality, and the lower the linearity is, the greater the distortion degree of the transmitted signal is, and the worse the communication quality is; the return loss at the output of the power amplifier limits its reliability, and the greater the return loss, the greater the reflected energy between the power amplifier and the load, and the worse the reliability. Based on the technical scheme, the invention provides a novel power amplifier with an improved cascode structure.
Disclosure of Invention
The invention aims to provide a novel cascode structure power amplifier aiming at the problems of the traditional and improved cascode structure power amplifiers; the invention adopts an inductance-free linearization cascode structure, the area of the circuit is greatly reduced due to the inductance-free structure, the linearization technology is realized by using an additional common-gate transistor, the output impedance of the cascode and the flow direction of the internal nonlinear current are effectively changed, and thus the power amplifier can realize higher linearity and good output end return loss.
In order to achieve the purpose, the invention adopts the technical scheme that:
a cascode structure based non-linear cancellation power amplifier, comprising: a single-ended cascode structure circuit, the single-ended cascode structure circuit comprising: a common source tube M1 and a common gate tube M2; the power amplifier further includes: the nonlinear cancellation circuit consists of a common gate tube M3, a high-frequency bypass capacitor C and an isolation resistor R, wherein the source electrode of the common gate tube M3 is connected with the drain electrode of the common source tube M1, and the grid electrode of the common gate tube is connected with a control voltage V after passing through the isolation resistor RctrlDrain connected to supply voltage VxOne end of the high-frequency bypass capacitor C is connected with the grid electrode of the common-grid tube M3, and the other end is grounded.
Further, in the single-ended cascode structure, a source electrode of the common source transistor M1 is grounded, a drain electrode of the common source transistor M2 is connected to a source electrode of the common gate transistor M2, a power supply voltage VDD is connected to the drain electrode of the common gate transistor M2 through a choke inductor, and an input signal is input from a gate electrode of the common source transistor M1, amplified by the common source transistor M1 and the common gate transistor M2, and then output from a drain electrode of the common gate transistor M2.
The invention has the beneficial effects that:
the invention provides a nonlinear cancellation power amplifier based on a cascode structure, which consists of a single-end cascode structure circuit and a nonlinear cancellation circuit, wherein a common gate tube M3 (nonlinear cancellation circuit) is added at a middle node (a connection point of a common source tube and a common gate tube) of the single-end cascode structure to change the output resistance of the power amplifier to be approximately equal to the optimal load resistance, so that the output return loss performance of the power amplifier is greatly improved; meanwhile, the polarity of the nonlinear current of the common-gate tube M3 is opposite to that of the nonlinear current of the common-source tube (M1) in a cascode (cascode) structure, so that the effect of mutual cancellation can be achieved, and the linearity of the power amplifier is further remarkably improved; in addition, no current flows through the common-gate tube M3, so that extra power consumption is not introduced, the output power of the power amplifier is not deteriorated, and the layout area of the circuit is greatly reduced because the nonlinear cancellation circuit has no inductance structure;
in summary, compared with the conventional cascode (cascode) structure-based power amplifier, the cascode structure-based nonlinear cancellation power amplifier provided by the invention has higher linearity and better output return loss performance.
Drawings
Fig. 1 is a circuit diagram of a conventional cascode (cascode) based power amplifier.
Fig. 2 is a circuit schematic diagram of a cascode (cascode) structure-based power amplifier with an intermediate node connected in parallel with an inductor.
Fig. 3 is a circuit schematic diagram of a cascode (cascode) structure-based power amplifier with an intermediate node connected in series with an inductor.
Fig. 4 is a circuit schematic diagram of a cascode-based nonlinear cancellation power amplifier according to the present invention.
Fig. 5 is a schematic flow diagram of the nonlinear current of the cascode-based nonlinear cancellation power amplifier according to the present invention.
Fig. 6 is a graph comparing the output return loss of the cascode-based non-linear cancellation power amplifier and the conventional cascode power amplifier according to the embodiment of the present invention.
Fig. 7 is a comparison of IMD3 for a cascode based non-linear cancellation power amplifier and a conventional cascode power amplifier in accordance with an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The embodiment provides a power amplifier is offset to nonlinearity based on cascode structure, and its circuit structure is shown in fig. 4, through linearization technique, has not only effectively promoted the linearity of traditional cascode structure, has improved the return loss of traditional cascode structure moreover by a wide margin, and then shows promotion cascode power amplifier's reliability.
The invention mainly comprises two parts, wherein the first part is a traditional single-ended cascade structure and comprises the following components: the common source tube M1 and the common gate tube M2, wherein, the source of the M1 tube is grounded, the drain is connected with the source of the M2 tube, the power supply voltage VDD supplies power to the drain of the M2 through the choke inductor, the signal is input from the grid of the M1 tube, and is output from the drain of the M2 after being amplified by the M1 and the M2; the second part is a nonlinear cancellation circuit consisting of a common-gate tube M3, a high-frequency bypass capacitor C and an isolation resistor R, wherein the source electrode of the M3 tube is connected with the drain electrode of the M1 tube, and the grid electrode of the M3 tube is connected with a control voltage V after passing through the isolation resistor RctrlThe drain of the M3 tube is connected with a supply voltage VxOne end of the high-frequency bypass capacitor C is connected with the grid of the M3 tube, and the other end of the high-frequency bypass capacitor C is grounded; as shown in fig. 4, the common source transistor M1, the common gate transistor M2, and the common gate transistor M3 all use NMOS transistors.
The working principle of the invention is as follows:
1. improvement of return loss for the output of the power amplifier;
the output resistance of the power amplifier is increased from g of the conventional structure due to the adoption of the nonlinear cancellation circuitm2·rO1·rO2Is reduced to gm2·(rO1//r3)·rO2Wherein g ism2Is M2Transconductance r ofO1Is the output resistance, r, of M1O2Is the output resistance, r, of M23A drain-source resistance of M3; the optimal load resistance of the cascode structure PA is equal to VDD/(2I)DC) Wherein VDD is power voltage, IDCIs the drain quiescent current of the common source transistor M1. For a typical CMOS process, VDD/(2I)DC) Has a value of about several tens of ohms, gm2·rO1·rO2Of between several hundred and several thousand ohms, gm2·(rO1//r3)·rO2Values of between tens and hundreds of ohms; to achieve maximum power of a Power Amplifier (PA), the PA output must be connected to an optimal load resistance, and the return loss at the output is determined by the values of the output resistance and the load resistance, the closer the two are, the better the return loss is.
Therefore, in the conventional cascode-structure-based power amplifier, the optimal load resistance VDD/(2I)DC) And an output resistance gm2·rO1·rO2There is a gap in the order of magnitude; in the present invention, the optimal load resistance VDD/(2I)DC) And an output resistance gm2·(rO1//r3)·rO2Are largely approximated and are adjusted by adjusting the size of M3 and VctrlR can be further changed3So that the output resistance is approximately equal to the optimal load resistance; therefore, the invention has better return loss compared with the traditional cascade structure. In addition, since there is no voltage difference between the source and drain of M3, no current flows through this transistor, and therefore it does not introduce additional power consumption by itself, nor does it degrade the output power of the PA.
2. Improvement for power amplifier linearity;
in this embodiment, the flow direction of the nonlinear current of the cascode-structure-based nonlinear cancellation power amplifier is shown in fig. 5; the third order nonlinear current magnitude flowing through M1 is:
wherein, g3Third-order transconductance of M1 tube, amplitude of input voltage, third-order non-transconductance of flowing M3The linear current amplitude is:
wherein,
is the third order transconductance of the M3 tube,
the voltage amplitude at point X. By adjusting the sizes of the M1 and the M3, the magnitudes of the third-order nonlinear currents flowing through the M1 and the M3 can be equal, so that the third-order nonlinear current flowing through the M2 is 0, and no nonlinear current can be output to a load; therefore, compared with the traditional cascade structure, the linearity is improved.
In summary, by adopting the nonlinear cancellation technology, compared with the power amplifier with the traditional cascode structure, the return loss and linearity of the output end of the power amplifier are both significantly improved; under the condition of keeping the same main circuit parameters, the nonlinear cancellation power amplifier based on the cascode structure in the present embodiment and the conventional cascode structure power amplifier (fig. 1) are subjected to simulation tests, and the test results are shown in fig. 6 and fig. 7, respectively. As shown in fig. 6, compared to the conventional cascode-structured power amplifier, the return loss (S22) at the output end of the power amplifier provided in the present embodiment is increased by 6 to 8dB over the entire operating frequency band; as shown in fig. 7, compared to the conventional cascode-structured power amplifier, the IMD3 of the power amplifier provided in the present embodiment is increased by at most 20 dB; therefore, compared with the traditional cascode structure power amplifier, the cascode structure power amplifier has better return loss characteristic of the output end and higher linearity.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (2)
1. A cascode structure based non-linear cancellation power amplifier, comprising: a single-ended cascode structure circuit, the single-ended cascode structure circuit comprising: a common source tube M1 and a common gate tube M2; the power amplifier further includes: the nonlinear cancellation circuit consists of a common gate tube M3, a high-frequency bypass capacitor C and an isolation resistor R, wherein the source electrode of the common gate tube M3 is connected with the drain electrode of the common source tube M1, and the grid electrode of the common gate tube is connected with a control voltage V after passing through the isolation resistor RctrlDrain connected to supply voltage VxOne end of the high-frequency bypass capacitor C is connected with the grid electrode of the common-grid tube M3, and the other end is grounded.
2. The cascode based nonlinear cancellation power amplifier of claim 1, wherein in the single-ended cascode configuration, the source of the common source transistor M1 is grounded, the drain is connected to the source of the common gate transistor M2, the power supply voltage VDD is connected to the drain of the common gate transistor M2 through a choke inductor, and the input signal is input from the gate of the common source transistor M1, amplified by the common source transistor M1 and the common gate transistor M2, and output from the drain of the common gate transistor M2.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113346847A (en) * | 2021-06-17 | 2021-09-03 | 西安电子科技大学重庆集成电路创新研究院 | High linearity variable gain amplifier |
| CN116436420A (en) * | 2023-06-15 | 2023-07-14 | 苏州悉芯射频微电子有限公司 | High-performance low-noise amplifier |
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2021
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113346847A (en) * | 2021-06-17 | 2021-09-03 | 西安电子科技大学重庆集成电路创新研究院 | High linearity variable gain amplifier |
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