CN117375544A - Ultra-wideband distributed low-noise amplifier with triple cascade structure - Google Patents
Ultra-wideband distributed low-noise amplifier with triple cascade structure Download PDFInfo
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- 230000005540 biological transmission Effects 0.000 claims abstract description 42
- 239000003990 capacitor Substances 0.000 claims abstract description 25
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- 238000004377 microelectronic Methods 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 238000013461 design Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 101100416997 Homo sapiens RNPS1 gene Proteins 0.000 description 2
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- 238000011161 development Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses an ultra-wideband distributed low-noise amplifier with a triple cascade structure, relates to the microelectronic technology, and provides a scheme for solving the problem that the gain and bandwidth are low in the prior art. A plurality of gain units are connected in parallel between the input artificial transmission line and the output artificial transmission line; the head end of the input artificial transmission line is connected with a first capacitor in series and then used as a signal input end, and the tail end of the input artificial transmission line sequentially passes through a grid terminal unit and a second choke inductor and then is connected with a first grid bias voltage; the tail end of the output artificial transmission line is connected in series with a seventh capacitor and then used as a signal output end; the head end sequentially passes through the drain terminal unit and the first choke inductor and then is connected with working voltage; each gain unit has the same structure and is formed by cascading three GaN transistors. The advantage is that a large bandwidth and a high linearity can be achieved. The gain unit effectively compensates roll-off of high-frequency gain of the distributed amplifier, effectively expands bandwidth of the distributed low-noise amplifier, and realizes the ultra-wideband amplifier with multiple octaves.
Description
Technical Field
The invention relates to a microelectronic technology, in particular to an ultra-wideband distributed low-noise amplifier with a triple cascade structure.
Background
A low noise amplifier is a circuit for amplifying weak signals, which is commonly used for amplifying signals in radio receivers. The low noise amplifier is positioned at the front end of the radio frequency receiving system and connected with the antenna. Since the signal from the antenna is generally very weak, the quality of the signal received by the overall receiver is directly affected by the performance of the low noise amplifier. In order to ensure that the signal is amplified and transmitted to the next stage, the low noise amplifier needs to have performance characteristics of high gain, high linearity, low noise and the like. In addition, in broadband transceivers, the bandwidth of the low noise amplifier is also an important performance parameter.
In addition to broadband transceivers, broadband amplifiers are also widely used in multimode transceivers, high-speed links, instrumentation systems, radar and imaging systems. Conventional wideband amplifier technologies include resistive feedback technology, inductive load technology, balanced structures, distributed structures, and the like. To design an ultra wideband amplifier with multiple octaves, a distributed architecture is one of the most widely used architectures at present. The distributed structure has the advantages of applying the monolithic microwave integrated circuit technology, and has a simple topological structure, the performance of the distributed structure is insensitive to the change of the process parameters, and the distributed structure is widely applied to gallium arsenide technology in the first place. With the continued development of communication systems, wideband amplifiers require higher linearity, wider operating bandwidth, higher sensitivity, and lower noise figure. The high electron mobility and good thermal conductivity of gallium nitride enable a gallium nitride high electron mobility transistor (GaN HEMT) to obtain large bandwidth and low noise coefficient, and the gallium nitride high electron mobility transistor can work at higher voltage, remarkably improves output power and linearity, and greatly improves performance compared with gallium arsenide. With this great advantage, it is more attractive to design a distributed ultra wideband low noise amplifier using gallium nitride technology.
The prior art has the following defects:
the performance of a distributed amplifier depends on the gain cell circuit, while the bandwidth of the amplifier is also limited by the parasitic parameters of the transistors in the gain cell circuit. Most of the existing distributed amplifiers are based on gallium arsenide or silicon-based technology, and the distributed amplifiers are divided into a common-source distributed amplifier, a common-source common-gate distributed amplifier and other structures according to different gain unit circuits. The distributed amplifier has the following problems:
first, gallium arsenide and silicon based processes, while having broader applications, have lower linearity and output power. With the development of communication technology, performance such as high frequency, high bandwidth, high transmission rate, and high output power is required in radio frequency applications. Gallium nitride not only can meet high frequency and high bandwidth, but also has high output power, and is an ideal choice for designing a broadband amplifier. But current gallium nitride based distributed amplifiers have difficulty reaching bandwidths above 50 GHz.
Second, the gain and bandwidth of the cascode distributed amplifier are low, and although the gain and bandwidth of the cascode distributed amplifier can be improved, its minimum parasitic parameters limit the gain compensation at higher frequencies. A new gain cell circuit is needed to more effectively compensate for the high frequency gain roll-off, further expanding bandwidth.
Disclosure of Invention
In order to solve the defect of high-frequency gain compensation of a common source-common gate gain unit and simultaneously consider the linearity of the amplifier, the invention provides an ultra-wideband distributed low-noise amplifier with a triple cascade structure. The gain unit based on the Triple cascade (Triple cascode) structure of the gallium nitride transistor effectively improves the gain bandwidth product of the distributed amplifier, realizes the ultra-wideband distributed low-noise amplifier with multiple octaves, and meets good noise performance and linearity.
The ultra-wideband distributed low-noise amplifier with the triple cascade structure comprises an input artificial transmission line formed by connecting a plurality of first grid microstrip lines in series and an output artificial transmission line formed by connecting a plurality of first drain microstrip lines in series; a plurality of gain units are connected in parallel between the input artificial transmission line and the output artificial transmission line; the head end of the input manual transmission line is connected with a first capacitor in series and then used as a signal input end, and the tail end of the input manual transmission line sequentially passes through a grid terminal unit and a second choke inductor and then is connected with a first grid bias voltage; the tail end of the output manual transmission line is connected in series with a seventh capacitor and then used as a signal output end; the head end sequentially passes through the drain terminal unit and the first choke inductor and then is connected with working voltage; each gain unit has the same structure and is formed by cascading three GaN transistors.
The gain unit structure specifically comprises: the grid electrode of the first GaN transistor is connected with an input manual transmission line through a second grid microstrip line, the source electrode of the first GaN transistor is grounded, and the drain electrode of the first GaN transistor is connected with the source electrode of the second GaN transistor through a first peaking inductor; the grid electrode of the second GaN transistor is respectively connected with a second grid bias voltage through a second resistor and grounded through a third capacitor, and the drain electrode of the second GaN transistor is connected with the source electrode of the third GaN transistor through a second peaking inductor; the grid electrode of the third GaN transistor is respectively connected with a third grid bias voltage through a third resistor and grounded through a fourth capacitor, and the drain electrode of the second GaN transistor is connected with an output artificial transmission line through a second drain microstrip line.
The number of gain cells is 4 to 8, preferably 6.
The grid terminal unit structure specifically comprises: one end of the first resistor is connected to the tail end of the input manual transmission line, and the other end of the first resistor is connected with the first grid bias voltage through the second capacitor and the second choke inductor respectively.
The drain terminal unit has the specific structure that: one end of the sixth resistor is connected to the head end of the output manual transmission line, the other end of the sixth resistor is divided into three branches, the first branch is connected with working voltage through the first choke inductor, the second branch is grounded after passing through the fifth resistor and the sixth capacitor, and the third branch is grounded after passing through the fourth resistor and the fifth capacitor.
The sixth capacitance and the fifth capacitance are not equal.
The ultra-wideband distributed low-noise amplifier with the triple cascade structure has the advantages that based on gallium nitride process design, the small-size gallium nitride transistor can achieve large bandwidth and higher linearity. The gain unit of the distributed amplifier adopts a Triple cam structure, so that roll-off of high-frequency gain of the distributed amplifier is effectively compensated, bandwidth of the distributed low-noise amplifier is effectively expanded, and the ultra-wideband amplifier with multiple octaves is realized.
On the other hand, compared with the distributed amplifier in the prior art, the ultra-wideband distributed low-noise amplifier effectively improves the gain bandwidth product of the amplifier, the bandwidth of the ultra-wideband distributed low-noise amplifier with the gain flatness smaller than 1dB is 1-72.5GHz, the 3-dB bandwidth is 1-77GHz, the ultra-wideband amplifier with full coverage from L wave band to V wave band is realized, and good noise performance and linearity are maintained.
Drawings
Fig. 1 is a schematic diagram of an ultra wideband distributed low noise amplifier according to the present invention.
Fig. 2 is a voltage gain curve of the gain cell of the present invention versus the gain cell of the prior art.
Fig. 3 is a graph of the gain response and noise figure simulation of the ultra wideband distributed low noise amplifier of the present invention.
Fig. 4 is a graph of simulation of the input reflection coefficient and the output reflection coefficient of the ultra wideband distributed low noise amplifier according to the present invention.
Fig. 5 is a graph of a simulation of the stability of an ultra wideband distributed low noise amplifier according to the present invention.
FIG. 6 is an output P of the ultra-wideband distributed low noise amplifier of the present invention 1dB The point simulation graph is compressed.
Reference numerals:
01 is a gate terminal unit, 02 is a gain unit, 03 is a drain terminal unit;
c1 to C7 are first to seventh capacitances;
r1 to R6 are first to sixth resistances;
lg1 to Lg2 are first to second gate microstrip lines;
ld1 to Ld2 are first to second drain microstrip lines;
m1 to M3 are first to third GaN transistors;
lx1 to Lx2 are first to second peaking inductors;
LDC1 to LDC2 are first to second choke inductors;
vg1 to Vg3 are first to third gate bias voltages;
vd is an operating voltage, RFin is a signal input, and RFout is a signal output.
Detailed Description
As shown in fig. 1, the ultra-wideband distributed low noise amplifier with the triple cascade structure in the invention comprises an input artificial transmission line formed by connecting a plurality of first gate microstrip lines Lg1 in series and an output artificial transmission line formed by connecting a plurality of first drain microstrip lines Ld1 in series. And a plurality of gain units 02 are connected in parallel between the input artificial transmission line and the output artificial transmission line. The head end of the input manual transmission line is connected with a first capacitor C1 in series and then serves as a signal input end, and the tail end of the input manual transmission line sequentially passes through a gate terminal unit 01 and a second choke inductance LDC2 and then is connected with a first gate bias voltage Vg1. The tail end of the output artificial transmission line is connected in series with a seventh capacitor C7 and then used as a signal output end. The head end is connected with the working voltage Vd after sequentially passing through the drain terminal unit 03 and the first choke inductance LDC 1. Each gain unit 02 has the same structure and is formed by cascading three GaN transistors.
The gain unit 02 has the structure specifically as follows: the grid electrode of the first GaN transistor M1 is connected to the input manual transmission line through the second grid microstrip line Lg2, the source electrode of the first GaN transistor M1 is grounded, and the drain electrode of the first GaN transistor M1 is connected with the source electrode of the second GaN transistor M2 through the first peaking inductor Lx 1. The grid electrode of the second GaN transistor M2 is respectively connected with a second grid bias voltage Vg2 through a second resistor R2 and grounded through a third capacitor C3, and the drain electrode of the second GaN transistor M2 is connected with the source electrode of the third GaN transistor M3 through a second peaking inductor Lx 2. The grid electrode of the third GaN transistor M3 is respectively connected with a third grid bias voltage Vg3 through a third resistor R3 and grounded through a fourth capacitor C4, and the drain electrode of the third GaN transistor M3 is connected into an output artificial transmission line through a second drain microstrip line Ld 2.
The number of gain units 02 is 4 to 8 or more, and in the present embodiment, a preferred value of 6 is used.
The structure of the gate terminal unit 01 specifically comprises: one end of the first resistor R1 is connected to the tail end of the input manual transmission line, and the other end of the first resistor R1 is respectively grounded through the second capacitor C2 and connected with the first grid bias voltage Vg1 through the second choke inductor LDC 2.
The specific structure of the drain terminal unit 03 is as follows: one end of the sixth resistor R6 is connected to the head end of the manual transmission line, the other end of the sixth resistor R6 is divided into three branches, the first branch is connected with the working voltage Vd through the first choke inductor LDC1, the second branch is grounded after passing through the fifth resistor R5 and the sixth capacitor C6, and the third branch is grounded after passing through the fourth resistor R4 and the fifth capacitor C5.
The sixth capacitance C6 and the fifth capacitance C5 are not equal.
The working principle of the ultra-wideband distributed low-noise amplifier in the invention is as follows:
the grid terminal unit 01 is connected to the tail end of the input manual transmission line in the forward signal transmission direction, absorbs residual signals at the tail end, and ensures that the signals cannot be back-propagated at the tail end.
The drain terminal unit 03 is connected to the end of the output artificial transmission line in the reverse signal transmission direction, absorbs the reverse propagation signal of the end, and prevents the signal from being reflected and then superimposed with the forward propagation signal to deteriorate the gain flatness.
The higher the frequency, the more sensitive the signal to spurious parameters of the circuit. The design of the drain termination 03 requires a measure of output matching, gain and stability. At higher frequencies, small segments of the transmission line on the operating voltage Vd path deteriorate the high frequency performance of the circuit. To solve this problem, a drain sixth resistor R6 is placed as a drain termination resistor in the path of the direct current, and two RC series networks are added at the end, where the capacitance in one RC series network is a large capacitance and the other is a small capacitance. With this design, although power consumption is improved, most of the influence of the drain terminal unit 03 on the circuit can be eliminated.
All distributed amplifier performance is substantially determined by the gain cells within it. In order to more effectively compensate the roll-off of the high-frequency gain, the invention provides a gain unit 02 based on a Triple-cascaded (Triple-cascaded) structure of gallium nitride transistors. A first peaking inductor Lx1 is introduced between the drain electrode of the first GaN transistor M1 and the source electrode of the second GaN transistor M2, and a second peaking inductor Lx2 is introduced between the drain electrode of the second GaN transistor M2 and the source electrode of the third GaN transistor M3, so as to realize the compensation of high-frequency gain.
The gain unit 02 compensates the gain roll-off by increasing the output impedance at high frequency, and under a fixed working voltage, the parasitic capacitance of each transistor is also determined, the first peaking inductance Lx1 and the parasitic capacitance of the first GaN transistor M1 and the second GaN transistor M2 cooperate to generate a pole, and the addition of the third capacitor C3 increases the adjustability of the pole. Then, the value of the pole can be adjusted by changing the first peaking inductance Lx1 and the third capacitance C3, thereby improving the output impedance of the high frequency. Similarly, the second peaking inductor Lx2 and the other pole generated by the fourth capacitor C4 further enhance this effect.
The technical effects of the ultra-wideband distributed low noise amplifier in the invention are shown in fig. 2 to 6. To prove the advantages of the gain unit 02, the voltage gains of the three gain unit 02 basic structures of the common-source stage (CS), the common-source common-gate (cascode) and the Triple cascode according to the present invention are compared, and as shown in fig. 2, the gain compensation effect of the high frequency is not good although the common-source common-gate structure is improved compared with the gain of the common-source stage structure. Under the same working voltage, the Triple cam structure more effectively compensates the high-frequency gain roll-off and expands the bandwidth. On the basis of the advantage effect of the gain unit 02, the bandwidth of the ultra-wideband distributed low-noise amplifier with the gain flatness smaller than 1dB is 1-72.5GHz, the 3-dB bandwidth is 1-77GHz, the ultra-wideband amplifier with the full coverage from the L wave band to the V wave band is realized, and good noise performance and linearity are maintained.
It will be apparent to those skilled in the art from this disclosure that various other changes and modifications can be made which are within the scope of the invention as defined in the appended claims.
Claims (7)
1. The ultra-wideband distributed low-noise amplifier with the triple cascade structure is characterized by comprising an input artificial transmission line formed by connecting a plurality of first grid microstrip lines (Lg 1) in series and an output artificial transmission line formed by connecting a plurality of first drain microstrip lines (Ld 1) in series; a plurality of gain units (02) are connected in parallel between the input artificial transmission line and the output artificial transmission line;
the head end of the input manual transmission line is connected with a first capacitor (C1) in series and then used as a signal input end, and the tail end of the input manual transmission line sequentially passes through a grid terminal unit (01) and a second choke inductor (LDC 2) and then is connected with a first grid bias voltage (Vg 1);
the tail end of the output manual transmission line is connected in series with a seventh capacitor (C7) and then used as a signal output end; the head end sequentially passes through the drain terminal unit (03) and the first choke inductor (LDC 1) and then is connected with the working voltage (Vd);
each gain unit (02) has the same structure and is formed by cascading three GaN transistors.
2. Ultra wideband distributed low noise amplifier of triple cascaded structure according to claim 1, characterized in that the gain unit (02) structure is specifically:
the grid electrode of the first GaN transistor (M1) is connected with an input manual transmission line through a second grid microstrip line (Lg 2), the source electrode of the first GaN transistor (M1) is grounded, and the drain electrode of the first GaN transistor (M1) is connected with the source electrode of the second GaN transistor (M2) through a first peaking inductor (Lx 1);
the grid electrode of the second GaN transistor (M2) is respectively connected with a second grid bias voltage (Vg 2) through a second resistor (R2) and grounded through a third capacitor (C3), and the drain electrode of the second GaN transistor (M2) is connected with the source electrode of the third GaN transistor (M3) through a second peaking inductor (Lx 2);
the grid electrode of the third GaN transistor (M3) is respectively connected with a third grid bias voltage (Vg 3) through a third resistor (R3) and grounded through a fourth capacitor (C4), and the drain electrode of the third GaN transistor (M3) is connected into an output manual transmission line through a second drain microstrip line (Ld 2).
3. An ultra wideband distributed low noise amplifier of triple cascaded structure according to claim 1, characterized in that the number of gain cells (02) is 4 to 8.
4. An ultra wideband distributed low noise amplifier of triple cascaded structure according to claim 3, characterized in that the number of gain cells (02) is 6.
5. An ultra wideband distributed low noise amplifier of triple cascaded structure according to claim 1, wherein said gate termination unit (01) structure is specifically: one end of the first resistor (R1) is connected to the tail end of the input manual transmission line, and the other end of the first resistor is grounded through the second capacitor (C2) and connected with the first grid bias voltage (Vg 1) through the second choke inductor (LDC 2).
6. An ultra wideband distributed low noise amplifier of triple cascaded structure according to claim 1, wherein said drain termination unit (03) has the specific structure: one end of a sixth resistor (R6) is connected to the head end of the manual transmission line, the other end of the sixth resistor is divided into three branches, the first branch is connected with the working voltage (Vd) through a first choke inductor (LDC 1), the second branch is grounded through a fifth resistor (R5) and a sixth capacitor (C6), and the third branch is grounded through a fourth resistor (R4) and a fifth capacitor (C5).
7. An ultra wideband distributed low noise amplifier with triple cascaded structure according to claim 6, wherein said sixth capacitance (C6) and fifth capacitance (C5) are not equal.
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| CN108336978A (en) * | 2018-01-10 | 2018-07-27 | 南京邮电大学 | A kind of cascade distributed low noise amplifier |
| CN108736850A (en) * | 2018-08-17 | 2018-11-02 | 广东工业大学 | A kind of distributed amplifier of low noise |
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| CN113659934A (en) * | 2021-07-27 | 2021-11-16 | 电子科技大学 | Distributed low noise amplifier based on negative feedback matching network |
| CN214799427U (en) * | 2021-04-27 | 2021-11-19 | 南京米乐为微电子科技有限公司 | Ultra-wideband distributed power amplifier |
-
2023
- 2023-10-23 CN CN202311382094.9A patent/CN117375544A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336978A (en) * | 2018-01-10 | 2018-07-27 | 南京邮电大学 | A kind of cascade distributed low noise amplifier |
| CN108736850A (en) * | 2018-08-17 | 2018-11-02 | 广东工业大学 | A kind of distributed amplifier of low noise |
| CN111600553A (en) * | 2020-05-28 | 2020-08-28 | 成都嘉纳海威科技有限责任公司 | Microwave monolithic integration ultra-wideband power amplifier |
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| CN113659934A (en) * | 2021-07-27 | 2021-11-16 | 电子科技大学 | Distributed low noise amplifier based on negative feedback matching network |
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