CN216056945U - Three-path power synthesis radio frequency power amplifier based on transformer matching - Google Patents
Three-path power synthesis radio frequency power amplifier based on transformer matching Download PDFInfo
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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Abstract
The embodiment of the utility model discloses a transformer matching based three-way power synthesis radio frequency power amplifier, wherein a radio frequency input signal RFin sequentially passes through an input matching network and a first-stage two-way amplifying circuit, is amplified by the first-stage two-way amplifying circuit, and then is converted into two-way differential signals after sequentially passing through the first-stage matching network, the second-stage one-way amplifying circuit and a first transformer T1, the two-way differential signals pass through a third-stage two-way amplifying circuit and then are synthesized into one-way signals through a second transformer T2, the synthesized signals and the other amplified signals after being amplified by the first-stage two-way amplifying circuit are transmitted to a third transformer T3 together, so that the signals are synthesized into one-way radio frequency output signals RFout through a third transformer T3, and the impedance matching difficulty can be reduced through the mode, and the input return loss and the gain can be effectively optimized, and the output power is favorably improved.
Description
Technical Field
The utility model relates to the technical field of power amplifiers, in particular to a three-path power synthesis radio frequency power amplifier based on transformer matching.
Background
The key module of the 5G wireless communication system is a radio frequency Power Amplifier (RF Power Amplifier) located at the final stage of the transmitter, and the radio frequency Power Amplifier is used for amplifying signals and then transmitting the amplified signals through an antenna. The radio frequency power amplifier directly influences and determines various performance indexes of the transmitter system, such as output power, efficiency, gain, linearity, working bandwidth, reflection coefficient and the like, thereby influencing and determining various performance indexes of the whole 5G wireless communication system. An impedance matching network is usually used in a radio frequency power amplifier, the existing matching network is generally a series-parallel combination of one to several capacitance inductors, and the impedance matching network of the capacitance inductors is used for realizing impedance change when an input/output port of the radio frequency power amplifier is connected with a 50 ohm port, so that the effects of maximum gain transmission or maximum power transmission and the like are achieved according to the requirements of different amplifiers.
Most of the existing impedance matching networks are n-shaped, T-shaped and L-shaped, however, the output power of a radio frequency power amplifier in a 5G wireless communication system is higher, so that more transistors are needed for designing and realizing high power, and the matching difficulty is increased; in addition, the capacitance, the inductance and the resistance under high frequency generate larger parasitic effect, so that the actual value of the device has a certain difference from the ideal value, and therefore, the impedance matching under high frequency is more difficult; moreover, if only the conventional matching structure of the capacitor and the inductor is used, it is difficult to match the input return loss and the gain to a good state.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a transformer matching-based three-path power synthesis radio frequency power amplifier, which can reduce impedance matching difficulty, effectively optimize input return loss and gain and is beneficial to improving output power.
In order to solve the above technical problem, in one aspect, an embodiment of the present invention provides a transformer matching based three-way power synthesis radio frequency power amplifier, including an input matching network, a first-stage two-way amplifying circuit, a first-stage matching network, a second-stage one-way amplifying circuit, a second-stage transformer matching network, a third-stage two-way amplifying circuit, and an output transformer matching network;
the second stage transformer matching network comprises a first transformer T1, the output transformer matching network comprises a second transformer T2 and a third transformer T3;
a radio-frequency input signal RFin is transmitted to two input ends of the first-stage two-way amplification circuit through the input matching network, and two output ends of the first-stage two-way amplification circuit are respectively connected with the input end of the first-stage matching network and one input end of the third transformer T3; the output end of the first-stage matching network is connected to the input end of the second-stage single-path amplifying circuit, two input ends of the first transformer T1 are respectively connected to the output end of the second-stage single-path amplifying circuit and the power supply voltage Vcc2, two output ends of the first transformer T1 are respectively connected to two input ends of the third-stage double-path amplifying circuit, two output ends of the third-stage double-path amplifying circuit are respectively connected to two input ends of the second transformer T2, two output ends of the second transformer T2 are respectively connected to the ground end and the other input end of the third transformer T3, one output end of the third transformer T3 is used for outputting the radio frequency output signal RFout, and the other output end of the third transformer T3 is grounded.
Further, the input matching network includes a fourth transformer T4, a first capacitor C1, a second capacitor C2, a first inductor L1, and two third capacitors C3;
one input end of the fourth transformer T4 is configured to input the radio frequency input signal RFin, the other input end of the fourth transformer T4 is grounded through the first inductor L1, one end of the first capacitor C1 and one end of the second capacitor C2 are respectively connected to two input ends of the fourth transformer T4, the other ends of the first capacitor C1 and the second capacitor C2 are both grounded, and two output ends of the fourth transformer T4 are respectively connected to two input ends of the first-stage two-way amplifying circuit through the two third capacitors C3.
Furthermore, the input matching network comprises two mirrored pi-shaped circuits, and each pi-shaped circuit comprises a high-pass pi-shaped LC unit, a fourth capacitor C4 and a base resistor R0;
the input end of the high-pass pi-type LC unit is used for inputting a radio frequency input signal RFin, and the output end of the high-pass pi-type LC unit is connected with one input end of the first-stage double-path amplifying circuit through the fourth capacitor C4 and the base resistor R0 in sequence.
Further, the first stage matching network comprises a high-pass T-type LC cell and a second inductor L2;
the input end of the high-pass T-shaped LC unit is connected with one end of the second inductor L2, a connection node is used as the input end of the first-stage matching network and is connected with one output end of the first-stage double-path amplifying circuit, the other end of the second inductor L2 is connected with a power supply voltage Vcc1, and the output end of the high-pass T-shaped LC unit is used as the output end of the first-stage matching network and is connected with the input end of the second-stage single-path amplifying circuit.
Furthermore, the second-stage transformer matching network further includes a fifth capacitor C5, a sixth capacitor C6, a third inductor L3, two fourth inductors L4, and two seventh capacitors C7;
one end of the fifth capacitor C5 and one end of the sixth capacitor C6 are respectively connected to two input ends of the first transformer T1, the other end of the fifth capacitor C5 and the other end of the sixth capacitor C6 are both grounded, the input end of the first transformer T1 for receiving the power supply voltage Vcc2 is connected to the power supply voltage Vcc2 through the third inductor L3, one end of the two fourth inductors L4 are respectively connected to two output ends of the first transformer T1, the other ends of the two fourth inductors L4 are both grounded, and the two seventh capacitors C7 are respectively connected in series between two output ends of the first transformer T1 and two input ends of the third-stage dual-path amplifying circuit.
Furthermore, the output transformer matching network further includes two eighth capacitors C8, a ninth capacitor C9, a tenth capacitor C10, a fifth inductor L5, and a sixth inductor L6;
one end of each of the two eighth capacitors C8 is connected to two input ends of the second transformer T2, the other ends of the two eighth capacitors C8 are all grounded, the grounded output end of the second transformer T2 is grounded through the fifth inductor L5, one end of the ninth capacitor C9 is connected to the grounded output end of the second transformer T2, the other end of the ninth capacitor C9 is grounded, the grounded output end of the third transformer T3 is grounded through the sixth inductor L6, one end of the tenth capacitor C10 is connected to the grounded output end of the third transformer T3, and the other end of the tenth capacitor C10 is grounded.
Furthermore, the system also comprises a first amplifying unit and an interstage matching network I; an output end of the first-stage two-way amplifying circuit connected with an input end of the third transformer T3 is connected with an input end of the third transformer T3 sequentially through the first interstage matching network and the first amplifying unit.
Furthermore, the system also comprises a second amplifying unit and an interstage matching network II; the first amplifying unit is connected with the input end of the third transformer T3 through the second interstage matching network and the second amplifying unit in sequence.
Further, the first-stage two-way amplifying circuit comprises two first transistors Q1, the second-stage one-way amplifying circuit comprises one second transistor Q2, and the third-stage two-way amplifying circuit comprises two third transistors Q3;
the bases of the two first transistors Q1 correspond to two input ends of the first-stage double-path amplifying circuit respectively, the collectors of the two first transistors Q1 correspond to two output ends of the first-stage double-path amplifying circuit respectively, and the emitters of the two first transistors Q1 are both grounded; the base electrode and the collector electrode of the second transistor Q2 are respectively and correspondingly used as the input end and the output end of the second-stage one-way amplifying circuit, and the emitter electrode of the second transistor Q2 is grounded; bases of the two third transistors Q3 correspond to two input ends of the third-stage double-circuit amplifying circuit respectively, collectors of the two third transistors Q3 correspond to two output ends of the third-stage double-circuit amplifying circuit respectively, and emitters of the two third transistors Q3 are grounded.
Has the advantages that: the utility model relates to a radio frequency power amplifier based on three-path power synthesis of transformer matching, which comprises an input matching network, a first-stage two-path amplifying circuit, a first-stage matching network, a second-stage one-path amplifying circuit, a second-stage transformer matching network, a third-stage two-path amplifying circuit and an output transformer matching network; the second stage transformer matching network comprises a first transformer T1, the output transformer matching network comprises a second transformer T2 and a third transformer T3, a radio frequency input signal RFin is transmitted to two input ends of the first stage two-way amplifying circuit through the input matching network, after being amplified by the first stage two-way amplifying circuit, one path of amplified signal passes through the first stage matching network and the second stage one-way amplifying circuit in sequence and is transmitted to the first transformer T1, the two paths of amplified signal are converted into two paths of differential signals through the first transformer T1, the two paths of differential signals are transmitted to the second transformer T2 after passing through the third stage two-way amplifying circuit, the two paths of differential signals are combined into one path of signal through the second transformer T2 and are transmitted to one input end of the third transformer T3, and the amplified path of amplified signal by the first stage two-way amplifying circuit is transmitted to the other input end of the third transformer T3, therefore, the third transformer T3 is used for signal synthesis to form a radio frequency output signal RFout, three paths of power synthesis are achieved, impedance matching difficulty can be reduced by using the transformer for impedance matching, input return loss and gain can be effectively optimized, and output power can be improved.
Drawings
The technical solution and the advantages of the present invention will be apparent from the following detailed description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a radio frequency power amplifier according to an embodiment of the present invention;
fig. 2 is another schematic structural diagram of a radio frequency power amplifier according to an embodiment of the present invention;
fig. 3 is a schematic diagram of another structure of the rf power amplifier according to the embodiment of the present invention;
fig. 4 is a schematic diagram of another structure of the rf power amplifier according to the embodiment of the present invention.
Detailed Description
Referring to the drawings, wherein like reference numbers refer to like elements, the principles of the present invention are illustrated as being implemented in a suitable computing environment. The following description is based on illustrated embodiments of the utility model and should not be taken as limiting the utility model with regard to other embodiments that are not detailed herein.
Referring to fig. 1, a radio frequency power amplifier 100 for three-way power synthesis based on transformer matching according to an embodiment of the present invention includes an input matching network 11, a first-stage two-way amplifying circuit 12, a first-stage matching network 13, a second-stage one-way amplifying circuit 14, a second-stage transformer matching network 15, a third-stage two-way amplifying circuit 16, and an output transformer matching network 17.
Wherein the second stage transformer matching network 15 comprises a first transformer T1, and the output transformer matching network comprises a second transformer T2 and a third transformer T3. It is understood that the first stage two-way amplifier circuit 12 and the third stage two-way amplifier circuit 16 are both circuits having two-way amplifier circuits, both having two input terminals and two output terminals, and the second stage one-way amplifier circuit 14 is an one-way amplifier circuit.
A radio-frequency input signal RFin is transmitted to two input ends of the first-stage two-way amplifying circuit 12 through the input matching network 11, and two output ends of the first-stage two-way amplifying circuit 12 are respectively connected with an input end of the first-stage matching network 13 and one input end of the third transformer T3; an output end of the first-stage matching network 13 is connected to an input end of the second-stage single-path amplifying circuit 14, two input ends of the first transformer T1 are respectively connected to an output end of the second-stage single-path amplifying circuit 14 and a supply voltage Vcc2, two output ends of the first transformer T1 are respectively connected to two input ends of the third-stage double-path amplifying circuit 16, two output ends of the third-stage double-path amplifying circuit 16 are respectively connected to two input ends of the second transformer T2, two output ends of the second transformer T2 are respectively connected to a ground end and another input end of the third transformer T3, one output end of the third transformer T3 is used for outputting a radio frequency output signal RFout, and another output end of the third transformer T3 is grounded.
Therefore, after the two amplified signals are amplified by the first-stage two-way amplifying circuit 12, one amplified signal passes through the first-stage matching network 13 and the second-stage one-way amplifying circuit 14 in sequence, is transmitted to the first transformer T1, and is converted into two-way differential signals under the action of the first transformer T1, and the two-way differential signals and the other amplified signal by the first-stage two-way amplifying circuit 12 form three-way signals. The two differential signals are transmitted to the second transformer T2 after passing through the third-stage two-way amplification circuit, the two differential signals are synthesized into one signal under the action of the second transformer T2, the signal is transmitted to one input end of the third transformer T3, the other amplified signal after being amplified by the first-stage two-way amplification circuit 12 is transmitted to the other input end of the third transformer T3, and then the signal is synthesized into one radio frequency output signal RFout through the third transformer T3, so that three-way power synthesis is realized. By the mode, the impedance matching is performed by using the transformer, the impedance matching difficulty can be reduced, the input return loss and the gain can be effectively optimized, and the output power can be improved.
In some embodiments of the present invention, the input matching network 11 includes a fourth transformer T4, a first capacitor C1, a second capacitor C2, a first inductor L1, and two third capacitors C3. In this embodiment, the rf input signal RFin is a single-ended signal. One input end of the fourth transformer T4 is configured to input the radio frequency input signal RFin, the other input end of the fourth transformer T4 is grounded through the first inductor L1, one end of the first capacitor C1 and one end of the second capacitor C2 are respectively connected to two input ends of the fourth transformer T4, the other ends of the first capacitor C1 and the second capacitor C2 are both grounded, and two output ends of the fourth transformer T4 are respectively connected to two input ends of the first-stage two-way amplifying circuit 12 through the two third capacitors C3.
Therefore, the single-ended rf input signal RFin can be converted into two-way signals by the action of the fourth transformer T4, and the two-way signals are input to the first-stage two-way amplifier circuit 12 for amplification.
With continued reference to fig. 1, the first stage matching network 13 includes a high pass T-LC cell and a second inductor L2.
The high-pass T-shaped LC unit comprises a capacitor Ca, a capacitor Cb and an inductor La, one end of the capacitor Ca is used as the input end of the high-pass T-shaped LC unit and is connected with one end of a second inductor L2, a connection node is used as the input end of the first-stage matching network 13 and is connected with one output end of the first-stage double-path amplifying circuit 12, and the other end of the second inductor L2 is connected with a power supply voltage Vcc 1. The other end of the capacitor Ca is connected to one end of the capacitor Cb and one end of the inductor La, and the other end of the capacitor Cb is an output end of the high-pass T-type LC unit and is also an output end of the first-stage matching network 13, and is connected to an input end of the second-stage one-way amplifying circuit 14. The other end of the inductor La is grounded.
The second-stage transformer matching network 15 further includes a fifth capacitor C5, a sixth capacitor C6, a third inductor L3, two fourth inductors L4, and two seventh capacitors C7. One end of the fifth capacitor C5 and one end of the sixth capacitor C6 are respectively connected to two input ends of the first transformer T1, the other end of the fifth capacitor C5 and the other end of the sixth capacitor C6 are both grounded, the input end of the first transformer T1 for receiving the power supply voltage Vcc2 is connected to the power supply voltage Vcc2 through the third inductor L3, one end of the two fourth inductors L4 are respectively connected to two output ends of the first transformer T1, the other ends of the two fourth inductors L4 are both grounded, and the two seventh capacitors C7 are respectively connected in series between two output ends of the first transformer T1 and two input ends of the third-stage dual-path amplifying circuit 16.
The output transformer matching network 17 further includes two eighth capacitors C8, a ninth capacitor C9, a tenth capacitor C10, a fifth inductor L5, and a sixth inductor L6. One end of each of the two eighth capacitors C8 is connected to two input ends of the second transformer T2, the other ends of the two eighth capacitors C8 are all grounded, the grounded output end of the second transformer T2 is grounded through the fifth inductor L5, one end of the ninth capacitor C9 is connected to the grounded output end of the second transformer T2, the other end of the ninth capacitor C9 is grounded, the grounded output end of the third transformer T3 is grounded through the sixth inductor L6, one end of the tenth capacitor C10 is connected to the grounded output end of the third transformer T3, and the other end of the tenth capacitor C10 is grounded.
Further, the output transformer matching network 17 further includes an eleventh capacitor C11, a twelfth capacitor C12, a seventh inductor L7, and an eighth inductor L8, wherein one output end of the first-stage two-way amplifying circuit 12 is connected to the input end of the third transformer T3 sequentially through the eleventh capacitor C11 and the seventh inductor L7. One end of the twelfth capacitor C12 is connected between the eleventh capacitor C11 and the seventh inductor L7, and the other end is grounded. One end of the eighth inductor L8 is connected between the output end of the first-stage two-way amplifier circuit 12 and the eleventh capacitor C11, and the other end is connected to a supply voltage Vcc 1.
In some embodiments of the present invention, the first stage two-way amplifying circuit 12 includes two first transistors Q1, the second stage one-way amplifying circuit 14 includes one second transistor Q2, and the third stage two-way amplifying circuit 16 includes two third transistors Q3.
The bases of the two first transistors Q1 correspond to two input ends of the first-stage two-way amplifying circuit 12, the collectors of the two first transistors Q1 correspond to two output ends of the first-stage two-way amplifying circuit 12, and the emitters of the two first transistors Q1 are both grounded; the base electrode and the collector electrode of the second transistor Q2 are respectively corresponding to the input end and the output end of the second stage one-way amplifying circuit 14, and the emitter electrode of the second transistor Q2 is grounded; bases of the two third transistors Q3 correspond to two input terminals of the third-stage dual-path amplifying circuit 16, collectors of the two third transistors Q3 correspond to two output terminals of the third-stage dual-path amplifying circuit 16, and emitters of the two third transistors Q3 are grounded.
Therefore, in the embodiment of the present invention, the first-stage two-way amplifying circuit 12 uses two first transistors Q1 to implement two-way amplifying circuits, respectively, while in other real-time modes, each of the amplifying circuits of the first-stage two-way amplifying circuit 12 may be implemented by using a plurality of parallel first transistors Q1, wherein bases of a plurality of parallel first transistors Q1 are connected in parallel, collectors are connected in parallel, and emitters are grounded. Similarly, each of the amplifying circuits of the other stages can be implemented by a plurality of transistors connected in parallel.
The bases of the first transistor Q1, the second transistor Q2, and the third transistor Q3 may be connected to a bias circuit for providing a bias voltage, for example, the base of the first transistor Q1 may be connected to the bias circuit bias1, the base of the second transistor Q2 may be connected to the bias circuit bias2, and the base of the third transistor Q3 may be connected to the bias circuit bias 3.
In the embodiment of the application, the radio frequency power amplifier 100 can be used as a power amplifier of an N77 frequency band (3.3-4.2 GHz) in 5G communication, and the gain and the output power of the power amplifier can be obviously improved by adopting a transformer matching mode, and the problem that the interstage matching of an amplifying circuit is difficult is solved.
The rf power amplifier 100 is composed of three stages of amplifying circuits to obtain high gain, and the base currents of the transistors in the amplifying circuits of each stage are about 100 μ a, which are all class AB quiescent operating points, thereby increasing the power added efficiency of the overall rf power amplifier. The input matching network 11 is transformer-matched and can convert a single-end input signal into a differential signal, wherein the capacitors C1, C2, C3, the inductor L1 and the fourth transformer T4 form the transformer matching network together, the two capacitors C3 can adjust the gain trend of the first-stage dual-path amplifier circuit 12, wherein the two first transistors Q1 can be set as the same or different transistors according to requirements, if the two first transistors Q1 are the same, the two capacitors C3 are the same, and otherwise, the two capacitors C3 are different. Two differential signals output by the first-stage two-way amplifying circuit 12 pass through a first-stage matching network 13 and a second-stage one-way amplifying circuit 14 and then enter a second-stage transformer matching network 15, and the other path of the two differential signals directly enters an output transformer matching network 17. The first stage matching network 13 is a two-stage LC matching, the second stage transformer matching network 15 converts the single-ended output signal of the second stage single-path amplifying circuit 14 into a differential output signal, and the two capacitors C7 can adjust the gain trend of the third stage double-path amplifying circuit 16. The output transformer matching network 17 is composed of two transformers, wherein the second transformer T2 converts the differential signal output by the third-stage two-way amplifying circuit 16 into a single-ended signal, and the single-ended signal is combined with the output signal of the other first-stage two-way amplifying circuit 12 into one path through the third transformer T3, so as to obtain high output power. The purpose of adjusting the overall output power can be achieved by adjusting one output power of the first-stage two-way amplifying circuit 12.
Referring to fig. 2, another embodiment of the rf power amplifier 100 of the present invention is different from the rf power amplifier shown in fig. 1 in that the structure of the input matching network 11 is different, and in the embodiment of fig. 1, a single rf input signal RFin input to the input matching network 11 is then converted into two differential signals by the fourth transformer T4.
More specifically, in the present embodiment, two paths of the pi-type circuits 111 are mirror images of the input matching network 11, and each path of the pi-type circuit 111 includes a high-pass pi-type LC unit 1111, a fourth capacitor C4, and a base resistor R0;
the input end of the high-pass pi-type LC unit 1111 is used for inputting a radio frequency input signal RFin, and the output end of the high-pass pi-type LC unit 1111 is connected with one input end of the first-stage two-way amplification circuit 12 through the fourth capacitor C4 and the base resistor R0 in sequence. The high-pass pi-type LC unit 1111 includes a capacitor and two inductors, one end of each of the two inductors is connected to the two ends of the capacitor, the two ends of the capacitor are the input end and the output end of the high-pass pi-type LC unit, and the other ends of the two inductors are grounded.
Referring to fig. 3, in another embodiment of the rf power amplifier 100 of the present invention, the rf power amplifier 100 may further include a first amplifying unit 18 and an inter-stage matching network one 19.
An output end of the first-stage two-way amplification circuit 12, which is connected to an input end of the third transformer T3, is connected to a connection node between the eleventh capacitor C11 and the eighth inductor L8 through the first inter-stage matching network 19 and the first amplification unit 18 in sequence.
As shown, the specific structure of the first amplifying unit 18 may be the same as that of the second stage single-circuit amplifying circuit 14, that is, the first amplifying unit 18 may also be implemented by using a second transistor Q2, the structure of the inter-stage matching network one 19 is substantially the same as that of the first stage matching network 13, and the inter-stage matching network one 19 also includes a high-pass T-type LC unit and an inductive element, except that the inter-stage matching network one 19 has a base resistor R1, and the base resistor R1 is connected in series between the high-pass T-type LC unit and the base of the second transistor Q2.
In this embodiment, the first interstage matching network 19 and the first amplifying unit 18 are arranged to form a two-stage amplifying circuit with one amplifying circuit (i.e., the first transistor Q1 at the lower half portion shown in fig. 1) of the first-stage two-way amplifying circuit 12, so that a larger gain and an output power can be provided, and the input return loss S11 can also be optimized by the interstage matching network 19.
It will be appreciated that the input matching network shown in fig. 3 may also take the configuration of the input matching network shown in fig. 2.
Referring to fig. 4, in another embodiment of the radio frequency power amplifier 100 of the present invention, the radio frequency power amplifier further includes a second amplifying unit 20 and a second inter-stage matching network 21. The first amplifying unit 18 is connected to a connection node of the eleventh capacitor C11 and the eighth inductor L8 through the second interstage matching network 21 and the second amplifying unit 20 in sequence. The structure of the second interstage matching network 21 is the same as that of the first interstage matching network 19, and a detailed description thereof is omitted, and the second amplifying unit 20 may be implemented by using a third transistor Q3. The input matching network shown in fig. 4 may be configured as the input matching network shown in fig. 2.
In this embodiment, by adding the second amplifying unit 20 and the second interstage matching network 21 to those shown in fig. 3, a three-stage amplifying circuit can be formed together with one amplifying circuit of the first-stage two-way amplifying circuit 12 (i.e., the first transistor Q1 in the lower half part shown in fig. 1) and the first amplifying unit 18, so that a larger gain and output power can be provided, and the input return loss S11 can be optimized.
The foregoing describes in detail a three-way power combining radio frequency power amplifier based on transformer matching according to an embodiment of the present invention, and a specific example is applied in the present disclosure to explain the principle and implementation manner of the present invention, and the description of the foregoing embodiment is only used to help understanding the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (9)
1. A radio frequency power amplifier based on three-path power synthesis of transformer matching is characterized by comprising an input matching network, a first-stage two-path amplifying circuit, a first-stage matching network, a second-stage one-path amplifying circuit, a second-stage transformer matching network, a third-stage two-path amplifying circuit and an output transformer matching network;
the second stage transformer matching network comprises a first transformer T1, the output transformer matching network comprises a second transformer T2 and a third transformer T3;
a radio-frequency input signal RFin is transmitted to two input ends of the first-stage two-way amplification circuit through the input matching network, and two output ends of the first-stage two-way amplification circuit are respectively connected with the input end of the first-stage matching network and one input end of the third transformer T3; the output end of the first-stage matching network is connected to the input end of the second-stage single-path amplifying circuit, two input ends of the first transformer T1 are respectively connected to the output end of the second-stage single-path amplifying circuit and the power supply voltage Vcc2, two output ends of the first transformer T1 are respectively connected to two input ends of the third-stage double-path amplifying circuit, two output ends of the third-stage double-path amplifying circuit are respectively connected to two input ends of the second transformer T2, two output ends of the second transformer T2 are respectively connected to the ground end and the other input end of the third transformer T3, one output end of the third transformer T3 is used for outputting the radio frequency output signal RFout, and the other output end of the third transformer T3 is grounded.
2. The radio frequency power amplifier of claim 1, wherein the input matching network comprises a fourth transformer T4, a first capacitor C1, a second capacitor C2, a first inductor L1, and two third capacitors C3;
one input end of the fourth transformer T4 is configured to input the radio frequency input signal RFin, the other input end of the fourth transformer T4 is grounded through the first inductor L1, one end of the first capacitor C1 and one end of the second capacitor C2 are respectively connected to two input ends of the fourth transformer T4, the other ends of the first capacitor C1 and the second capacitor C2 are both grounded, and two output ends of the fourth transformer T4 are respectively connected to two input ends of the first-stage two-way amplifying circuit through the two third capacitors C3.
3. The radio frequency power amplifier of claim 1, wherein the input matching network comprises two mirrored pi-type circuits, each of the pi-type circuits comprising a high-pass pi-type LC cell, a fourth capacitor C4, and a base resistor R0;
the input end of the high-pass pi-type LC unit is used for inputting a radio frequency input signal RFin, and the output end of the high-pass pi-type LC unit is connected with one input end of the first-stage double-path amplifying circuit through the fourth capacitor C4 and the base resistor R0 in sequence.
4. The radio frequency power amplifier of claim 1, wherein the first stage matching network comprises a high pass T-type LC cell and a second inductor L2;
the input end of the high-pass T-shaped LC unit is connected with one end of the second inductor L2, a connection node is used as the input end of the first-stage matching network and is connected with one output end of the first-stage double-path amplifying circuit, the other end of the second inductor L2 is connected with a power supply voltage Vcc1, and the output end of the high-pass T-shaped LC unit is used as the output end of the first-stage matching network and is connected with the input end of the second-stage single-path amplifying circuit.
5. The radio frequency power amplifier of claim 1, wherein the second stage transformer matching network further comprises a fifth capacitor C5, a sixth capacitor C6, a third inductor L3, two fourth inductors L4, and two seventh capacitors C7;
one end of the fifth capacitor C5 and one end of the sixth capacitor C6 are respectively connected to two input ends of the first transformer T1, the other end of the fifth capacitor C5 and the other end of the sixth capacitor C6 are both grounded, the input end of the first transformer T1 for receiving the power supply voltage Vcc2 is connected to the power supply voltage Vcc2 through the third inductor L3, one end of the two fourth inductors L4 are respectively connected to two output ends of the first transformer T1, the other ends of the two fourth inductors L4 are both grounded, and the two seventh capacitors C7 are respectively connected in series between two output ends of the first transformer T1 and two input ends of the third-stage dual-path amplifying circuit.
6. The radio frequency power amplifier of claim 1, wherein the output transformer matching network further comprises two eighth capacitors C8, a ninth capacitor C9, a tenth capacitor C10, a fifth inductor L5, and a sixth inductor L6;
one end of each of the two eighth capacitors C8 is connected to two input ends of the second transformer T2, the other ends of the two eighth capacitors C8 are all grounded, the grounded output end of the second transformer T2 is grounded through the fifth inductor L5, one end of the ninth capacitor C9 is connected to the grounded output end of the second transformer T2, the other end of the ninth capacitor C9 is grounded, the grounded output end of the third transformer T3 is grounded through the sixth inductor L6, one end of the tenth capacitor C10 is connected to the grounded output end of the third transformer T3, and the other end of the tenth capacitor C10 is grounded.
7. The radio frequency power amplifier according to any one of claims 1 to 6, further comprising a first amplifying unit and an inter-stage matching network I; an output end of the first-stage two-way amplifying circuit connected with an input end of the third transformer T3 is connected with an input end of the third transformer T3 sequentially through the first interstage matching network and the first amplifying unit.
8. The radio frequency power amplifier of claim 7, further comprising a second amplifying unit and an inter-stage matching network two; the first amplifying unit is connected with the input end of the third transformer T3 through the second interstage matching network and the second amplifying unit in sequence.
9. The radio frequency power amplifier of claim 1, wherein the first stage two-way amplifying circuit comprises two first transistors Q1, the second stage one-way amplifying circuit comprises one second transistor Q2, and the third stage two-way amplifying circuit comprises two third transistors Q3;
the bases of the two first transistors Q1 correspond to two input ends of the first-stage double-path amplifying circuit respectively, the collectors of the two first transistors Q1 correspond to two output ends of the first-stage double-path amplifying circuit respectively, and the emitters of the two first transistors Q1 are both grounded; the base electrode and the collector electrode of the second transistor Q2 are respectively and correspondingly used as the input end and the output end of the second-stage one-way amplifying circuit, and the emitter electrode of the second transistor Q2 is grounded; bases of the two third transistors Q3 correspond to two input ends of the third-stage double-circuit amplifying circuit respectively, collectors of the two third transistors Q3 correspond to two output ends of the third-stage double-circuit amplifying circuit respectively, and emitters of the two third transistors Q3 are grounded.
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WO2023065843A1 (en) * | 2021-10-22 | 2023-04-27 | 深圳飞骧科技股份有限公司 | Transformer matching-based three-power synthesis radio frequency power amplifier |
WO2024109421A1 (en) * | 2022-11-23 | 2024-05-30 | 深圳飞骧科技股份有限公司 | Radio-frequency power amplifier and electronic device |
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US7486141B2 (en) * | 2005-12-21 | 2009-02-03 | Trex Enterprises Corp. | Wide bandwidth, high power amplifier |
JP2015115860A (en) * | 2013-12-13 | 2015-06-22 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | High frequency power amplification device and radio communication device |
CN106533374A (en) * | 2016-09-20 | 2017-03-22 | 锐迪科微电子(上海)有限公司 | Multiband GSM radio-frequency power amplifier |
CN106788274B (en) * | 2017-01-18 | 2023-10-31 | 广东宽普科技股份有限公司 | Broadband three-way synthesized radio frequency microwave power amplifier |
CN112865720A (en) * | 2021-01-20 | 2021-05-28 | 电子科技大学 | X-band wide-pulse high-power internal matching power amplifier |
CN216056945U (en) * | 2021-10-22 | 2022-03-15 | 深圳飞骧科技股份有限公司 | Three-path power synthesis radio frequency power amplifier based on transformer matching |
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WO2023065843A1 (en) * | 2021-10-22 | 2023-04-27 | 深圳飞骧科技股份有限公司 | Transformer matching-based three-power synthesis radio frequency power amplifier |
WO2024109421A1 (en) * | 2022-11-23 | 2024-05-30 | 深圳飞骧科技股份有限公司 | Radio-frequency power amplifier and electronic device |
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