CN218549870U

CN218549870U - Radio frequency power amplifier and radio frequency front end module

Info

Publication number: CN218549870U
Application number: CN202222300828.1U
Authority: CN
Inventors: 曹原; 戎星桦; 倪建兴
Original assignee: Radrock Shenzhen Technology Co Ltd
Current assignee: Radrock Shenzhen Technology Co Ltd
Priority date: 2022-08-31
Filing date: 2022-08-31
Publication date: 2023-02-28
Anticipated expiration: 2032-08-31

Abstract

The utility model belongs to the technical field of the radio frequency, especially, relate to a radio frequency power amplifier and radio frequency front end module. The radio frequency power amplifier has the advantages that the first differential pair and the second differential pair are adopted for amplifying radio frequency signals, and the radio frequency power amplifier can also ensure better insertion loss and bandwidth performance on the premise of realizing high-power performance by coupling the first primary coil, the second primary coil and the first secondary coil and reasonably setting the inductance value ratio relationship among the first primary coil, the first sub-coil, the second primary coil and the second sub-coil.

Description

Radio frequency power amplifier and radio frequency front end module

Technical Field

The utility model belongs to the technical field of the radio frequency, especially, relate to a radio frequency power amplifier and radio frequency front end module.

Background

The new generation of information technology is in a rapidly developing situation at present, and the technology of each subdivision field is continuously updated and advanced. Among them, the Power Amplifier (PA) in the rf technology is an important component in the rf front-end module. With the increasing requirements for the working frequency band in the radio frequency technology, the power amplifier is also greatly tested. For example, with the continuous application and popularization of the fifth Generation Mobile Communication Technology (5G), it is a key in the design of the power amplifier whether each performance index can meet the higher requirements in the new application scenario.

Disclosure of Invention

The utility model provides an among the prior art power amplifier at least partial performance index be difficult to satisfy the technical problem of the higher performance requirement in new application scene, provide a radio frequency power amplifier and radio frequency front end module.

In a first aspect, an embodiment of the present invention provides a radio frequency power amplifier, including:

a first differential pair comprising a first output terminal and a second output terminal;

a first primary coil, the first output terminal being connected to a first end of the first primary coil, the second output terminal being connected to a second end of the first primary coil;

a second differential pair comprising a third output terminal and a fourth output terminal;

a second primary coil, the third output terminal being connected to a first terminal of the second primary coil, the fourth output terminal being connected to a second terminal of the second primary coil;

the first secondary coil comprises a first sub-coil and a second sub-coil which are connected in series, the first sub-coil is coupled with the first primary coil, and the second sub-coil is coupled with the second primary coil;

the ratio of the inductance values of the first primary coil and the first sub-coil is 1: [1.5-13];

the ratio of the inductance values of the second primary coil and the second sub-coil is 1: [1.5-13].

Optionally, the radio frequency Power amplifier supports the Power Class 2 standard in 3GPP, and a ratio of inductance values of the first primary coil and the first sub-coil is in a range of 1: 2-6; the ratio of the inductance values of the second primary coil and the second sub-coil is in the range of 1: [2-6 ].

Optionally, the radio frequency Power amplifier supports a Power Class 1 standard and/or a Power Class 1.5 standard in 3GPP, and a ratio of inductance values of the first primary coil and the first sub-coil is in a range of 1: [7-13 ]; the ratio of the inductance values of the second primary coil and the second sub-coil is in the range of 1: [7-13 ].

Optionally, the radio frequency power amplifier supports transmission of radio frequency signals in a N41 frequency band and/or a N77 frequency band, and the inductance values of the first primary coil and the second primary coil are both [0.4nh,2nh ].

Optionally, the inductance values of the first primary coil and the second primary coil are both between [0.4nH,1.2H ], (1.2nH, 1.5nH ], or (1.5AnH, 2nH ].

Optionally, the fundamental output impedance of the first output terminal and the second output terminal of the first differential pair is between [3 ohm and 8 ohm ], and the fundamental output impedance of the third output terminal and the fourth output terminal of the second differential pair is between [3 ohm and 8 ohm ].

Optionally, a difference between fundamental wave output impedances of any two of the first output terminal, the second output terminal, the third output terminal, and the fourth output terminal is less than 0.5 ohm.

Optionally, the fundamental output impedances of the first output and the second output of the first differential pair are both between [3 ohm, 4.5 ohm ], (4.5 ohm, 6 ohm ], or (6 ohm, 8 ohm ], and the fundamental output impedances of the third output and the fourth output of the second differential pair are both between [3 ohm, 4.5 ohm ], (4.5 ohm, 6 ohm ], or (6 ohm, 8 ohm ].

Optionally, the line widths of the first sub-coils of the first primary coils are the same, the coil lengths of the first sub-coils of the first primary coils are configured such that the ratio of the inductance values of the first primary coils and the first sub-coils is between 1: [1.5-13];

and/or the presence of a gas in the gas,

the line widths of the second sub-coils of the second primary coils are the same, and the coil lengths of the second sub-coils of the second primary coils are configured such that the ratio of the inductance values of the second primary coils and the second sub-coils is between 1: [1.5-13].

Optionally, the first differential pair further includes a first input terminal and a second input terminal, the first input terminal receives a first differential signal, and the second input terminal receives a second differential signal; the second differential pair further comprises a third input terminal and a fourth input terminal, the third input terminal receives a third differential signal, and the fourth input terminal receives a fourth differential signal;

the phase difference between the first differential signal and the second differential signal is 180 ± 20 degrees, the phase difference between the third differential signal and the fourth differential signal is 180 ± 20 degrees, the phase difference between the first differential signal and the fourth differential signal is ± 20 degrees, and the phase difference between the second differential signal and the third differential signal is ± 20 degrees.

Optionally, the differential amplifier further comprises an input conversion module, where the input conversion module receives an input radio frequency signal, converts the input radio frequency signal into multiple differential signals, and outputs the multiple differential signals to the first differential pair and the second differential pair.

Optionally, the input conversion module includes a first conversion balun and a second conversion balun, a first end of a primary coil of the first conversion balun receives an input radio frequency signal, and a second end of the primary coil of the first conversion balun is grounded; a first end of the secondary of the first conversion balun is connected to the second input of the first differential pair and a second end of the secondary of the first conversion balun is connected to the first input of the first differential pair; a first end of a primary coil of the second conversion balun receives an input radio frequency signal, and a second end of the primary coil of the second conversion balun is grounded; a first end of the secondary coil of the second converting balun is connected to the third input end of the second differential pair, and a second end of the secondary coil of the second converting balun is connected to the fourth input end of the second differential pair.

Optionally, a first input of the first differential pair corresponds to the first output, and a second input of the first differential pair corresponds to the second output; the third input end of the second differential pair corresponds to the third output end, and the fourth input end of the second differential pair corresponds to the fourth output end.

Optionally, the ratio of the inductance values of the first primary coil and the first sub-coil is 1: [1.5-3.5], 1 (3.5-5.5 ] or 1 (5.5-7 ], 1 (7-9 ] or 1 (9-13 ], and the ratio of the inductance values of the second primary coil and the second sub-coil is 1: [1.5-3.5], 1 (3.5-5.5 ] or 1 (5.5-7 ] or 1 (7-9 ].

Optionally, a first end of the first sub-coil is connected to an output end of a radio frequency signal, a second end of the first sub-coil is connected to a first end of the second sub-coil, and a second end of the second sub-coil is grounded; the ratio of the inductance values of the first sub-coil and the second sub-coil is larger than 1.

Optionally, a ratio of inductance values of the first sub-coil and the second sub-coil is between (1, 1.2).

In a second aspect, an embodiment of the present invention provides a radio frequency power amplifier, including:

the radio frequency power amplifier supports transmission of radio frequency signals in an N41 frequency band and/or an N77 frequency band, and the inductance values of the first primary coil and the second primary coil are both between [0.4nH,2nH ].

In a third aspect, an embodiment of the present invention provides a radio frequency power amplifier, including:

a first primary coil, the first output terminal connected to a first end of the first primary coil, the second output terminal coupled to a second end of the first primary coil;

a second primary coil, the third output connected to a first end of the second primary coil, the fourth output coupled to a second end of the second primary coil;

the fundamental wave output impedance of the first output end and the second output end of the first differential pair is between [3 ohm and 8 ohm ], and the fundamental wave output impedance of the third output end and the fourth output end of the second differential pair is between [3 ohm and 8 ohm ].

Optionally, the apparatus further comprises a power supply circuit, wherein the power supply circuit provides a power supply voltage for the first differential pair and/or the second differential pair.

Optionally, the supply voltage is less than or equal to 3.5V.

Optionally, a first conversion balun and a second conversion balun are further included;

a first end of a primary coil of the first conversion balun receives an input radio frequency signal, and a second end of the primary coil of the first conversion balun is grounded; a first end of the secondary coil of the first conversion balun is connected to the second input end of the first differential pair, and a second end of the secondary coil of the first conversion balun is connected to the first input end of the first differential pair;

a first end of a primary coil of the second conversion balun receives an input radio-frequency signal, and a second end of the primary coil of the second conversion balun is grounded; a first end of the secondary coil of the second converting balun is connected to the third input end of the second differential pair, and a second end of the secondary coil of the second converting balun is connected to the fourth input end of the second differential pair.

Optionally, a first output terminal of the first differential pair is connected to a first terminal of the first primary coil through a first capacitor, and a second output terminal of the first differential pair is connected to a second terminal of the first primary coil through a second capacitor; the third output end of the second differential pair is connected to the first end of the second primary coil through a third capacitor, and the fourth output end of the second differential pair is connected to the second end of the second primary coil through a fourth capacitor.

Optionally, the first end of the first sub-coil is connected to a signal output end, the second end of the first sub-coil is connected to the first end of the second sub-coil, and the second end of the second sub-coil is grounded through a fifth capacitor.

In a fourth aspect, an embodiment of the present invention provides a radio frequency front end module, including:

a substrate;

the first chip is arranged on the substrate and comprises a first differential pair and a second differential pair, the first differential pair comprises a first output end and a second output end, and the second differential pair comprises a third output end and a fourth output end;

a second primary coil, the third output terminal connected to a first terminal of the second primary coil, the fourth output terminal coupled to a second terminal of the second primary coil;

Optionally, the first primary coil, the second primary coil and the first secondary coil are disposed on the substrate.

Optionally, the first primary coil, the second primary coil and the first secondary coil are disposed in a second chip, the second chip being disposed on the substrate.

Optionally, the second chip is an integrated passive device chip.

Optionally, the first primary coil, the second primary coil and the first sub-coil are configured in at least one metal layer of the second chip according to a ratio of inductance values of the first primary coil and the first sub-coil being between 1: [1.5-13], and a ratio of inductance values of the second primary coil and the second sub-coil being between 1: [1.5-13].

Optionally, the substrate includes a first metal layer and a second metal layer sequentially disposed above and below, the first primary coil and the second primary coil are disposed in the first metal layer, and the first secondary coil is disposed in the second metal layer;

or,

the substrate comprises a first metal layer and a second metal layer which are sequentially arranged from top to bottom, the first primary coil and the second primary coil are arranged in the second metal layer, and the first secondary coil is arranged in the first metal layer.

Optionally, the substrate includes a first metal layer, a second metal layer and a third metal layer sequentially arranged from top to bottom, the first primary coil includes a fifth partial coil arranged in the first metal layer and a sixth partial coil arranged in the third metal layer, the second primary coil includes a seventh partial coil arranged in the first metal layer and an eighth partial coil arranged in the third metal layer, and the first sub-coil includes a ninth partial coil and a tenth partial coil arranged in the second metal layer;

the fifth partial coil and the sixth partial coil are connected in parallel, the seventh partial coil and the eighth partial coil are connected in parallel, and the ninth partial coil and the tenth partial coil are connected in series;

the fifth partial coil and the sixth partial coil are coupled to the ninth partial coil, and the seventh partial coil and the eighth partial coil are coupled to the tenth partial coil.

Optionally, the substrate includes a first metal layer, a second metal layer and a third metal layer sequentially disposed from top to bottom, and the first primary coil and the second primary coil are disposed in the second metal layer;

the first sub-coil comprises a first partial coil arranged on a first metal layer and a second partial coil arranged on a third metal layer, and the first partial coil and the first primary coil, and the second partial coil and the first primary coil are coupled up and down;

the second sub-coil comprises a third partial coil arranged on the first metal layer and a fourth partial coil arranged on the third metal layer, and the third partial coil is vertically coupled with the second primary coil and the fourth partial coil is vertically coupled with the second primary coil.

In a fifth aspect, an embodiment of the present invention provides a radio frequency front end module, including:

a substrate;

the first primary coil, the second primary coil, and the first sub-coil are in at least one metal layer of the substrate.

or,

Optionally, the first primary coil, the second primary coil and the first sub-coil are configured such that a ratio of inductance values of the first primary coil and the first sub-coil is between 1: [1.5-13] and a ratio of inductance values of the second primary coil and the second sub-coil is between 1: [1.5-13], and are disposed in at least one metal layer of the substrate.

In a sixth aspect, an embodiment of the present invention provides a radio frequency front end module, including:

a substrate;

the substrate comprises a first metal layer, a second metal layer and a third metal layer which are sequentially arranged from top to bottom, and the first primary coil and the second primary coil are arranged in the second metal layer;

the second sub-coil comprises a third partial coil arranged on the first metal layer and a fourth partial coil arranged on the third metal layer, the third partial coil and the second primary coil are coupled up and down, and the fourth partial coil and the second primary coil are coupled up and down.

The embodiment of the utility model provides an among radio frequency power amplifier and the radio frequency front end module, through adopting first difference pair and second difference pair to carry out radiofrequency signal's enlarged processing to through coupling between first primary, second primary and the first secondary and reasonable setting first primary with first sub-coil and second primary with inductance value ratio relation between the second sub-coil, with under the performance prerequisite of realization high power, can also guarantee that the better insertion of radio frequency power amplifier decreases and the bandwidth performance.

Drawings

The present invention will be further explained with reference to the drawings and examples.

Fig. 1 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention;

fig. 2 (a) -2 (c) are schematic simulation diagrams in an embodiment of the present invention;

fig. 3 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention;

fig. 4 is a schematic diagram of an rf power amplifier according to an embodiment of the present invention;

fig. 5 is a schematic diagram of simulation in an embodiment of the present invention;

fig. 6 (a) -6 (b) are schematic simulation diagrams in an embodiment of the present invention;

fig. 7 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention;

fig. 8 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention;

fig. 9 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention;

fig. 10 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention;

fig. 11 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention;

fig. 12 is a schematic diagram of an rf power amplifier according to an embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, of the embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity to indicate like elements throughout.

It will be understood that when an element or layer is referred to as being "on," adjacent to, "" connected to, "" and "connected to" other elements or layers, it can be directly on, adjacent to, or connected to the other elements or layers, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" other elements or layers, \82303030cceptsare not present there between. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

Spatial relationship terms such as "under 82303030," "under 823030; below," "under 823030; above," "over," etc. may be used herein for convenience of description to describe the relationship of one element or feature to another element or feature illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "at 8230, below" and "at 8230, below" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

In order to provide a thorough understanding of the present invention, detailed structures and steps will be provided in the following description so as to explain the technical solution provided by the present invention. The preferred embodiments of the present invention are described in detail below, however, other embodiments of the present invention are possible in addition to these detailed descriptions.

An embodiment of the utility model provides a radio frequency power amplifier, include:

Illustratively, as shown in fig. 1, the radio frequency power amplifier includes a first differential pair 10 and a second differential pair 20, the first differential pair 10 includes a first output terminal 11 and a second output terminal 12, and the second differential pair 20 includes a third output terminal 21 and a fourth output terminal 22. The radio frequency power amplifier further comprises a first primary coil 30, a second primary coil 40 and a first secondary coil 50, the first secondary coil 50 comprising a first sub-coil 51 and a second sub-coil 52 connected in series. It will be appreciated that the first differential pair 10 and the second differential pair 20 are both push-pull power amplifier architectures.

The first output terminal 11 is connected to a first terminal of the first primary coil 30, and the second output terminal 12 is connected to a second terminal of the first primary coil 30. It is understood that the first output terminal 11 may be directly connected to the first end of the first primary coil 30, or may be indirectly connected to the first end of the first primary coil 30. Illustratively, the first output terminal 11 may be connected to the first terminal 31 of the first primary winding 30 through at least one matching element, which may be one of an inductance, a capacitance, or a resistance, or a combination of at least two. It is understood that the second output terminal 12 may be directly connected to the second terminal of the first primary coil 30, or may be indirectly connected to the second terminal of the first primary coil 30. The second output terminal 12 may be connected to the second terminal of the first primary winding 30 through at least one matching element, which may be one of an inductance, a capacitance, or a resistance, or a combination of at least two.

The third output terminal 21 is connected to a first terminal of the second primary coil 40, and the fourth output terminal 22 is connected to a second terminal of the second primary coil 40. It is understood that the third output terminal 21 may be directly connected to the first terminal of the second primary coil 40, or indirectly connected to the first terminal of the second primary coil 40. Illustratively, the third output terminal 21 may be connected to the first terminal of the second primary winding 40 through at least one matching element, which may be one of an inductance, a capacitance, or a resistance, or a combination of at least two. It is understood that the fourth output terminal 22 may be directly connected to the second terminal of the second primary coil 40, or indirectly connected to the second terminal of the second primary coil 40. Illustratively, the fourth output terminal 22 may be connected to the second terminal of the second primary winding 40 through at least one matching element, which may be one or a combination of at least two of inductance, capacitance, or resistance.

As shown in fig. 1, the first secondary coil 50 includes a first sub-coil 51 and a second sub-coil 52 connected in series, wherein the first sub-coil 51 is coupled to the first primary coil 30, and the second sub-coil 52 is coupled to the second primary coil 40. Specifically, the coupling between the first sub-coil 51 and the first primary coil 30, and the coupling between the second sub-coil 52 and the second primary coil 40 may be between the same metal layers, or may be between different metal layers.

The ratio of the inductance values of the first primary coil and the first sub-coil is between 1: [1.5-13].

Wherein, the inductance values of the first primary coil, the first sub-coil, the second primary coil and the second sub-coil all refer to inductance values presented by themselves. In one embodiment, the ratio of the inductance values of the first primary coil and the first sub-coil is 1: [1.5-3], 1 (3-6), 1 (6-9 ] or 1 (9-13 ], and the ratio of the inductance values of the second primary coil and the second sub-coil is 1: [1.5-3], 1 (3-6), 1 (6-9) or 1 (9-13 ].

In one embodiment, the ratio of the inductance values of the first primary coil and the first sub-coil is 1.5, 1, 2, 1. In one embodiment, the ratio of the inductance values of the second primary coil and the second sub-coil is 1.5, 1, 2, 1.

In this embodiment, the first differential pair and the second differential pair are used to amplify the radio frequency signal, and the inductance value ratio relationship between the first primary coil and the first sub-coil and between the second primary coil and the second sub-coil is reasonably set through the coupling among the first primary coil, the second primary coil and the first secondary coil, so that the better insertion loss and bandwidth performance of the radio frequency power amplifier can be ensured on the premise of realizing high power performance.

As shown in fig. 2 (a) -2 (c), there are three cases in which inductance value ratio relationships between the first primary coil and the first sub-coil and between the second primary coil and the second sub-coil in the radio frequency power amplifier in the present embodiment are different. Specifically, in the curve a, the ratio of the inductance values of the first primary coil and the first sub-coil is more than 1: [1.5-13], and the ratio of the inductance values of the second primary coil and the second sub-coil is more than 1: [1.5-13]; in the curve b, the ratio of the inductance values of the first primary coil and the first sub-coil is 1: [1.5-13], and the ratio of the inductance values of the second primary coil and the second sub-coil is 1: [1.5-13]; in the curve c, the ratio of the inductance values of the first primary coil and the first sub-coil is less than 1: [1.5-13], and the ratio of the inductance values of the second primary coil and the second sub-coil is less than 1: [1.5-13]. As can be seen from fig. 2 (a) -2 (c), the value of the curve b enables the rf power amplifier to have good performance of both insertion loss and bandwidth characteristics.

In one embodiment, the radio frequency Power amplifier supports the Power Class 2 standard in 3GPP, and the ratio of the inductance values of the first primary coil and the first sub-coil is in the range of 1: 2-6; the ratio of the inductance values of the second primary coil and the second sub-coil is in the range of 1: [2-6 ]. Controlling the ratio of inductance values of the first primary coil and the first sub-coil to be 1: [2-6 ]; the ratio of the inductance values of the second primary coil and the second sub-coil is in the range of 1: 2-6, to realize the good performance of the radio frequency power amplifier in the power mode, which can combine the insertion loss and the bandwidth characteristic.

In one embodiment, the rf Power amplifier supports Power Class 1 standard and/or Power Class 1.5 standard in 3GPP, and the ratio of inductance values of the first primary coil and the first sub-coil is 1: [7-13 ]; the ratio of the inductance values of the second primary coil and the second sub-coil is in the range of 1: [7-13 ]. Controlling the ratio of the inductance values of the first primary coil and the first sub-coil to be 1: [7-13 ]; the ratio of the inductance values of the second primary coil and the second sub-coil is in the range of 1: 7-13, to achieve good performance of the radio frequency power amplifier in the power mode with both insertion loss and bandwidth characteristics.

In one embodiment, the first differential pair further comprises a first input and a second input. The first input end and the second input end respectively receive a pair of differential input signals, and the differential input signals are amplified through the first differential pair and then output through the first output end and the second output end. In one embodiment, the first input receives a first differential signal and the second input receives a second differential signal. Optionally, the phase difference between the first differential signal and the second differential signal is 180 ± 20 degrees.

In one embodiment, the second differential pair further comprises a third input and a fourth input. The third input end and the fourth input end respectively receive a pair of differential input signals, and the differential input signals are amplified by the second differential pair and then output by the third output end and the fourth output end. In one embodiment, the third input receives a third differential signal and the fourth input receives a fourth differential signal. Optionally, a phase difference of the third differential signal and the fourth differential signal is 180 ± 20 degrees.

In one embodiment, a phase difference between the first differential signal and the second differential signal is 180 ± 20 degrees, a phase difference between the third differential signal and the fourth differential signal is 180 ± 20 degrees, a phase difference between the first differential signal and the fourth differential signal is ± 20 degrees, and a phase difference between the second differential signal and the third differential signal is ± 20 degrees.

In one embodiment, a phase difference between the first differential signal and the second differential signal is 180 ± 20 degrees, a phase difference between the third differential signal and the fourth differential signal is 180 ± 20 degrees, a phase difference between the first differential signal and the third differential signal is ± 20 degrees, and a phase difference between the second differential signal and the fourth differential signal is ± 20 degrees.

In one embodiment, as shown in fig. 3, the rf power amplifier further includes an input conversion module 60, where the input conversion module 60 receives an input rf signal (RFin) and converts the input rf signal (RFin) into a plurality of differential signals to be output. Illustratively, the input conversion module 60 converts the received input radio frequency signal into the first differential signal, the second differential signal, the third differential signal and the fourth differential signal.

It is understood that the input conversion module can realize the output from a single radio frequency input signal to a plurality of differential signals through one-stage or multi-stage conversion.

In one embodiment, the input conversion module includes three input baluns: the first input balun, the second input balun and the third input balun. After passing through the first input balun, the input radio frequency signal is converted into two differential signals, and the two differential signals are converted into four differential signals (exemplarily, the two differential signals are converted into the first differential signal, the second differential signal, the third differential signal, and the fourth differential signal mentioned above) through the second input balun and the third input balun, and then are input into the first differential pair and the second differential pair, respectively.

In one embodiment, as shown in fig. 7, the input conversion module includes a first conversion balun 61 and a second conversion balun 62. A first end of the primary coil of the first conversion balun 61 receives the input radio frequency signal RFin, and a second end of the primary coil of the first conversion balun 61 is grounded. A first terminal of the secondary of the first conversion balun 61 is connected to the second input of said first differential pair and a second terminal of the secondary of the first conversion balun 61 is connected to the first input of said first differential pair. A first end of the primary coil of the second switching balun 62 receives the input radio frequency signal RFin, and a second end of the primary coil of the second switching balun 62 is grounded. A first end of the secondary coil of the second switching balun 62 is connected to the third input end of the second differential pair, and a second end of the secondary coil of the second switching balun 62 is connected to the fourth input end of the second differential pair.

Further, in this embodiment, the first input terminal of the first differential pair corresponds to the first output terminal, and the second input terminal of the first differential pair corresponds to the second output terminal. The third input end of the second differential pair corresponds to the third output end, and the fourth input end corresponds to the fourth output end. In particular, the above correspondence may be understood as an input terminal and an output terminal of the same amplifying transistor, or the correspondence may be understood as an input terminal and an output terminal on the same signal transmission path. In this embodiment, the first terminal of the first sub-coil is connected to an output terminal RFout of a radio frequency signal, the second terminal of the first sub-coil is connected to the first terminal of the second sub-coil, and the second terminal of the second sub-coil is grounded. The symmetry of the whole circuit of the radio frequency power amplifier can be ensured, better balance can be ensured, and the insertion loss characteristic of the whole circuit can be improved at least.

In this embodiment, signal splitting of the radio frequency signal RFin is realized by the two transforming baluns, and by the above connection manner with the first differential pair and the second differential pair, symmetry of the whole circuit structure is ensured, balance of the two differential pairs is realized, impedance balance of the whole circuit is further ensured, and insertion loss of the circuit can be reduced.

In one embodiment, the input conversion module includes a third primary coil, a second secondary coil, and a third secondary coil. The third primary coil comprises a third sub-coil and a fourth sub-coil, the third sub-coil is coupled with the second secondary coil, and the fourth sub-coil is coupled with the third secondary coil. The first end of the third sub-coil receives an input radio frequency signal RFin, the second end of the third sub-coil is connected with the first end of the fourth sub-coil, and the second end of the fourth sub-coil is grounded. A first end of the second secondary winding is connected to a first input of the first differential pair, and a second end of the second secondary winding is connected to a second input of the first differential pair. A first end of the third secondary winding is connected to a third input of the second differential pair, and a second end of the third secondary winding is connected to a fourth input of the second differential pair.

In one embodiment, the first differential pair 10 may include at least one amplification stage, each of which may include a pair of differential amplification transistors. Illustratively, taking the first differential pair 10 as a one-stage amplification stage as an example, as shown in fig. 3, the first differential pair 10 includes a first amplification transistor 13 and a second amplification transistor 14. The first and

second amplification transistors

13 and 14 may be Bipolar Junction Transistors (BJTs), J-type Field Effect transistors (JFETs), metal Oxide semiconductor Field Effect transistors (MOS FETs), or other types of transistors. Taking the first amplifying transistor 13 and the second amplifying transistor 14 as npn-type bipolar transistors as an example in fig. 3, the first amplifying transistor 13 includes a base, a collector and an emitter, wherein the base receives an input radio frequency signal (for example, a first differential signal) to be amplified, the emitter is grounded, and the collector is connected to the first output terminal 11. The second amplifying transistor 14 includes a base receiving an input radio frequency signal to be amplified (illustratively, a second differential signal), a collector connected to the second output terminal 12, and an emitter.

In one embodiment, the first amplifying transistor 13 and the second amplifying transistor 14 are both MOS transistors. The first amplifying transistor 13 includes a gate, a drain, and a source, wherein the gate receives an input radio frequency signal (illustratively, a first differential signal) to be amplified, the source is grounded, and the drain is connected to the first output terminal 11. The second amplifying transistor 14 includes a gate, a drain, and a source, wherein the gate receives an input radio frequency signal (illustratively, a second differential signal) to be amplified, the source is grounded, and the drain is connected to the second output terminal 12.

It will be appreciated that corresponding bias circuits, power supply circuits, input, output or inter-stage matching circuits, etc. may also be included in the first differential pair 10. In some embodiments, the bias circuit, the power supply circuit, the input/output or inter-stage matching circuit, etc. may be implemented by using a circuit structure commonly used in the art, and are not described herein again.

In one embodiment, the second differential pair 20 may include at least one amplification stage, each of which may include a pair of differential amplification transistors. Illustratively, taking the second differential pair 20 as a one-stage amplification stage as an example, as shown in fig. 4, the second differential pair 20 includes a third amplification transistor 23 and a fourth amplification transistor 24. The third and

fourth amplifying transistors

23 and 24 may be Bipolar Junction Transistors (BJTs), J-type Field Effect transistors (JFETs), metal Oxide semiconductor Field Effect transistors (MOS FETs), other types of transistors, or the like. In fig. 3, taking the third amplifying transistor 23 and the fourth amplifying transistor 24 as npn-type bipolar transistors as an example, the third amplifying transistor 23 includes a base, a collector and an emitter, wherein the base receives an input radio frequency signal (illustratively, a third differential signal) to be amplified, the emitter is grounded, and the collector is connected to the third output terminal 21. The fourth amplifying transistor 24 includes a base receiving an input radio frequency signal to be amplified (illustratively, a fourth differential signal), a collector connected to the fourth output terminal 22, and an emitter.

In one embodiment, the third amplification transistor 23 and the fourth amplification transistor 24 are both MOS transistors. The third amplifying transistor 23 includes a gate, a drain, and a source, wherein the gate receives an input radio frequency signal (illustratively, a third differential signal) to be amplified, the source is grounded, and the drain is connected to the third output terminal 21. The fourth amplifying transistor 24 includes a gate, a drain, and a source, wherein the gate receives an input radio frequency signal (illustratively, a fourth differential signal) to be amplified, the source is grounded, and the drain is connected to the fourth output terminal 22.

It will be appreciated that corresponding bias circuits, power supply circuits, input, output or inter-stage matching circuits, etc. may also be included in the second differential pair 20. In some embodiments, the bias circuit, the power supply circuit, the input/output or inter-stage matching circuit, etc. may be implemented by using a circuit structure commonly used in the art, and are not described herein again.

In one embodiment, the radio frequency power amplifier supports transmission of radio frequency signals in N41 band and/or N77 band, and the inductance values of the first primary coil and the second primary coil are both between [0.4nH,2nH ]. Wherein, the frequency ranges of N41 frequency band are [2515MHz,2675MHz ], and N77 frequency band are [3300MHz,4200MHz ]. In this embodiment, when the rf power amplifier supports transmission of the rf signal in the N41 frequency band and/or the N77 frequency band, the inductance values of the first primary coil and the second primary coil are both set to be [0.4nh,2nh ], so as to achieve better performance matching.

As shown in fig. 2 (a) -2 (c), in the curve b, the inductance values of the first primary coil and the second primary coil are both between [0.4nh,2nh ], and it can be seen that the impedance characteristic of the rf power amplifier is relatively stable in the N41 frequency band (i.e., [2515mhz,2675mhz ]), and the insertion loss is also better.

In one embodiment, the radio frequency power amplifier supports transmission of radio frequency signals in an N41 frequency band and/or an N77 frequency band, and the inductance values of the first primary coil and the second primary coil are both between [0.4nh,1.2nh ].

In one embodiment, the inductance value in the coil and the line width are negatively correlated and the coil length is positively correlated, and said first sub-coil of the first primary coil, and/or said second sub-coil of the second primary coil may be configured according to this relationship such that the ratio of the inductance values of the first primary coil and said first sub-coil is between 1: [1.5-13] and the ratio of the inductance values of the second primary coil and said second sub-coil is between 1: [1.5-13].

In one embodiment, the coil width and length of the first sub-coil of the first primary coil are configured such that the ratio of the inductance values of the first primary coil and the first sub-coil is between 1: [1.5-13]. And/or the coil width and the length of the second sub-coil of the second primary coil are configured such that the ratio of the inductance values of the second primary coil and the second sub-coil is between 1: [1.5-13].

In one embodiment, the line widths of the first sub-coils of the first primary coils are the same, and the coil lengths of the first sub-coils of the first primary coils are configured such that the ratio of the inductance values of the first primary coils and the first sub-coils is between 1: [1.5-13]. And/or the line width of the second sub-coil of the second primary coil is the same, and the coil length of the second sub-coil of the second primary coil is configured to make the ratio of the inductance values of the second primary coil and the second sub-coil between 1: [1.5-13].

In one embodiment, a first terminal of the first sub-coil is connected to an output terminal RFout of a radio frequency signal, a second terminal of the first sub-coil is connected to a first terminal of the second sub-coil, and a second terminal of the second sub-coil is grounded; the turn ratio of the first sub-coil to the second sub-coil is greater than 1.

In one embodiment, the turns ratio of the first sub-coil and the second sub-coil is between (1, 1.2).

In one implementation, a first terminal of the first sub-coil is connected to an output terminal RFout of a radio frequency signal, a second terminal of the first sub-coil is connected to a first terminal of the second sub-coil, and a second terminal of the second sub-coil is grounded; the ratio of the inductance values of the first sub-coil and the second sub-coil is greater than 1.

In one embodiment, the first and second sub-coils have the same line width, and the coil lengths of the first and second sub-coils are arranged such that a ratio of inductance values of the first and second sub-coils is greater than 1.

In one embodiment, a ratio of inductance values of the first and second sub-coils is between (1, 1.2).

As shown in fig. 5, a curve d indicates that the inductance values of the first sub-coil and the second sub-coil are the same, and a curve e indicates that the ratio of the inductance values of the first sub-coil and the second sub-coil is greater than 1. As can be seen from fig. 5, curve e clearly achieves good loss performance over a wide frequency band. Therefore, by setting the ratio of the inductance values of the first sub-coil and the second sub-coil to be greater than 1, the radio frequency power amplifier can obtain better loss performance in a wider frequency band range.

Further, by configuring the ratio of the inductance values of the first sub-coil and the second sub-coil to be (1, 1.2), the radio frequency power amplifier can obtain stable and low insertion loss in a wide bandwidth range.

In one embodiment, the first output and the second output of the first differential pair each have a fundamental output impedance between [3 ohms, 8 ohms ], and the third output and the fourth output of the second differential pair each have a fundamental output impedance between [3 ohms, 8 ohms ].

As shown in fig. 6 (a) and fig. 6 (b), fig. 6 (a) is a power-efficiency graph in which the fundamental output impedances of the first output terminal, the second output terminal, the third output terminal, and the fourth output terminal are 2 ohms, 3 ohms, 8 ohms, and 10 ohms, respectively. Wherein curve f corresponds to their fundamental output impedance of 2 ohms, curve g corresponds to their fundamental output impedance of 3 ohms, curve h corresponds to their fundamental output impedance of 8 ohms, and curve i corresponds to their fundamental output impedance of 10 ohms. And figure 6 (b) corresponds from left to right to the efficiency values after a saturation power backoff of 4dB for curve i, curve h, curve g and curve f, respectively. As can be seen from fig. 6 (a) and 6 (b), the efficiency values after 4dB power back-off for the curves with 3 ohm and 8 ohm fundamental output impedance are significantly higher than the efficiency values after 4dB power back-off for the curves with 2 ohm and 10 ohm fundamental output impedance. Therefore, in the present embodiment, by controlling the fundamental wave output impedance of the first output terminal, the second output terminal, the third output terminal, and the fourth output terminal to be [3 ohms, 8 ohms ], both power and efficiency can be achieved.

It can be understood that the fundamental output impedance mentioned in the embodiment of the present invention may be valued according to the real part of the impedance or the modulus of the impedance.

In one embodiment, the first output and the second output of the first differential pair each have a fundamental output impedance between [4 ohm, 8 ohm ], [5 ohm, 8 ohm ], or [6 ohm, 8 ohm ], and the third output and the fourth output of the second differential pair each have a fundamental output impedance between [4 ohm, 8 ohm ], [5 ohm, 8 ohm ], or [6 ohm, 8 ohm ].

In one embodiment, the first output and/or the second output of the first differential pair has a fundamental output impedance of 3 ohms, 4 ohms, 5 ohms, 6 ohms, 7 ohms, or 8 ohms, and the third output and/or the fourth output of the second differential pair has a fundamental output impedance of 3 ohms, 4 ohms, 5 ohms, 6 ohms, 7 ohms, or 8 ohms.

In one embodiment, a power supply circuit is further included that provides a supply voltage to the first differential pair and/or the second differential pair. Optionally, the supply voltage is within the interval of [2.7V,5V ]. In one embodiment, the supply voltage is less than or equal to 3.5V.

In this embodiment, in an application scenario of a low power supply voltage, in the radio frequency power amplifier provided in this embodiment, the fundamental wave output impedances of the first output terminal and the second output terminal of the first differential pair are both [3 ohms, 8 ohms ], and the fundamental wave output impedances of the third output terminal and the fourth output terminal of the second differential pair are both [3 ohms, 8 ohms ], that is, their fundamental wave output impedances are controlled at a lower level, which may ensure that the radio frequency power amplifier achieves high power performance.

Wherein, in the embodiment of the present invention, the inductance values of the first primary coil, the first sub-coil, the second primary coil and the second sub-coil all refer to inductance values that they present. Their inductance values can be calculated by direct measurement or by measuring the relevant parameters laterally. Also, respective end points of the first primary coil, the first sub-coil, the second primary coil, and the second sub-coil may be determined as connection points of the respective to other elements. Exemplarily, taking fig. 4 as an example, the first coil 30 may be determined as a portion between the first output terminal 11 and the second output terminal 12 (if there are no other elements between the first output terminal 11 and the first coil 30 and between the second output terminal 12 and the first coil 30). Taking fig. 8 as an example, the first primary coil 30 may be determined as a portion between an end point at which the first capacitor C1 is connected to the first end of the first primary coil 30 and an end point at which the second capacitor C2 is connected to the second end of the first primary coil 30. For the first and second sub-coils, since the second end of the first sub-coil and the first end of the second sub-coil are connected, their connection midpoints may be determined as respective end points.

An embodiment of the utility model also provides a radio frequency power amplifier, include:

a first primary coil, the first output terminal connected to a first end of the first primary coil, the second output terminal connected to a second end of the first primary coil;

the radio frequency power amplifier supports transmission of radio frequency signals of an N41 frequency band, and the inductance values of the first primary coil and the second primary coil are both between [0.4nH,2nH ].

The embodiment of the utility model provides a through adopting first difference pair and second difference pair to carry out radiofrequency signal's enlarged processing to through first primary with the reasonable setting of the inductance value of second primary is with under the performance prerequisite of realizing the high power in specific frequency channel (N41 frequency channel), can also guarantee the better insertion loss of radio frequency power amplifier and bandwidth performance.

the radio frequency power amplifier supports the transmission of radio frequency signals in an N77 frequency band, and the inductance values of the first primary coil and the second primary coil are both between [0.4nH,2nH ].

The embodiment of the utility model provides a through adopting first difference pair and second difference pair to carry out radiofrequency signal's enlarged processing to through first primary with the reasonable setting of the inductance value of second primary is with under the performance prerequisite of realizing the high power in specific frequency channel (N77 frequency channel), can also guarantee the better insertion loss of radio frequency power amplifier and bandwidth performance.

In this embodiment, the first differential pair and the second differential pair are used to amplify the rf signal, and the fundamental wave output impedances of the first output end and the second output end of the first differential pair are both [3 ohm, 8 ohm ], and the fundamental wave output impedances of the third output end and the fourth output end of the second differential pair are both [3 ohm, 8 ohm ], so that on the premise of realizing high power performance, better insertion loss and bandwidth performance of the rf power amplifier can be ensured.

In one embodiment, the fundamental wave output impedances of the first output terminal and the second output terminal of the first differential pair are both [3 ohm, 8 ohm ], and the fundamental wave output impedances of the third output terminal and the fourth output terminal of the second differential pair are both [3 ohm, 8 ohm ], which can be realized by the structure of the matching circuit and the adjustment of the parameters of the corresponding elements.

Alternatively, as shown in fig. 8, the first output terminal of the first differential pair is connected to the first terminal of the first primary coil through a first capacitor C1, and the second output terminal of the first differential pair is connected to the second terminal of the first primary coil through a second capacitor C2. A third output terminal of the second differential pair is connected to the first terminal of the second primary winding through a third capacitor C3, and the fourth output terminal is connected to the second terminal of the second primary winding through a fourth capacitor C4.

And the ratio of the inductance values of the first primary coil and the first sub-coil is between 1: [1.5-13]; the ratio of the inductance values of the second primary coil and the second sub-coil is 1: [1.5-13].

In this embodiment, by providing series capacitors between the output terminals and the first primary coil and the second primary coil of each differential pair and combining the parameters of the first primary coil, the second primary coil and the first secondary coil, the above-mentioned effects can be achieved that the fundamental wave output impedances of the first output terminal and the second output terminal of the first differential pair are both [3 ohm, 8 ohm ], and the fundamental wave output impedances of the third output terminal and the fourth output terminal of the second differential pair are both [3 ohm, 8 ohm ].

Alternatively, as shown in fig. 9, the second terminal of the second sub-coil is grounded through a fifth capacitor C5; i.e. the fifth capacitor is connected in series between the second terminal of the second sub-coil and ground.

Optionally, the second end of the first sub-coil and the first end of the second sub-coil are connected through a sixth capacitor; namely, a sixth capacitor is connected in series between the second terminal of the first sub-coil and the first terminal of the second sub-coil.

Optionally, the first end of the first sub-coil is connected to a signal output end through a seventh capacitor; namely, the seventh capacitor is connected in series between the first end of the first sub-coil and the signal output end.

An embodiment of the utility model also provides a radio frequency front end module, include:

a substrate;

In one embodiment, the first primary coil, the plurality of second primary coils, and the first secondary coil are disposed on the substrate.

In one embodiment, the first primary coil, the second primary coil and the first sub-coil are arranged in at least one metal layer of the second chip such that a ratio of inductance values of the first primary coil and the first sub-coil is between 1: [1.5-13] and a ratio of inductance values of the second primary coil and the second sub-coil is between 1: [1.5-13].

In one embodiment, the first primary coil, the second primary coil and the first sub-coil are arranged in two metal layers of the second chip such that a ratio of inductance values of the first primary coil and the first sub-coil is between 1: [1.5-13] and a ratio of inductance values of the second primary coil and the second sub-coil is between 1: [1.5-13].

In one embodiment, the first primary coil, the second primary coil and the first sub-coil are arranged in a three-layer metal layer of the second chip such that a ratio of inductance values of the first primary coil and the first sub-coil is between 1: [1.5-13], and a ratio of inductance values of the second primary coil and the second sub-coil is between 1: [1.5-13].

In one embodiment, the substrate includes a first metal layer, a second metal layer, and a third metal layer sequentially disposed one above the other, the first primary coil and the second primary coil being disposed in the second metal layer;

The first partial coil, the second partial coil, the third partial coil and the fourth partial coil are connected in series. As shown in fig. 12, the first partial coil is connected in series with the second partial coil through the through hole, the second partial coil is connected in series with the third partial coil through a segment, and the third partial coil is connected in series with the fourth partial coil through the through hole. It is to be understood that the manner in which the first partial coil, the second partial coil, the third partial coil and the fourth partial coil are connected in series is not limited to the manner of fig. 12. In one embodiment, the first partial coil is connected in series with the second partial coil through the through hole, the third partial coil is connected in series with the fourth partial coil through the through hole, and the first partial coil is connected in series with the third partial coil through a line segment.

As shown in fig. 12, the first primary coil 30 and the second primary coil 40 are both disposed in a second metal layer. The first primary coil 30 and the first and second partial coils are coupled to each other, and the second primary coil 40 and the third and fourth partial coils are coupled to each other.

In one embodiment, the substrate includes a first metal layer and a second metal layer sequentially disposed one above the other, the first primary coil and the second primary coil are disposed in the first metal layer, and the first secondary coil is disposed in the second metal layer. The first secondary coil comprises a first sub-coil and a second sub-coil which are connected in series, the first sub-coil is coupled with the first primary coil, and the second sub-coil is coupled with the second primary coil.

In one embodiment, the substrate includes a first metal layer and a second metal layer sequentially disposed one above the other, the first primary coil and the second primary coil are disposed in the second metal layer, and the first secondary coil is disposed in the first metal layer. The first secondary coil comprises a first sub-coil and a second sub-coil which are connected in series, the first sub-coil is coupled with the first primary coil, and the second sub-coil is coupled with the second primary coil.

In one embodiment, the first chip is a gallium arsenide chip, a gallium nitride chip, a CMOS chip, or the like.

In one embodiment, the first primary coil, the second primary coil, and the first secondary coil are disposed in a second chip disposed on the substrate. As shown in fig. 10, the first chip 100 includes a first differential pair and a second differential pair. The first primary coil 30, the second primary coil 40 and the first secondary coil 50 are disposed in a second chip 200.

In one embodiment, the second chip is an Integrated Passive Device (IPD) chip. It is understood that, in one embodiment, the rf front-end module may further include some passive matching elements, for example, capacitors C1-C5 mentioned in any of the above embodiments or other matching elements. These passive components may be placed in the first chip, in the second chip or on the substrate, which is not described in detail herein.

In one embodiment, as shown in fig. 11, the substrate includes a first metal layer, a second metal layer, and a third metal layer sequentially disposed above and below, the first primary coil includes a fifth partial coil disposed in the first metal layer and a sixth partial coil disposed in the third metal layer, the second primary coil includes a seventh partial coil disposed in the first metal layer and an eighth partial coil disposed in the third metal layer, and the first sub-coil includes a ninth partial coil and a tenth partial coil disposed in the second metal layer.

In one embodiment, the fifth partial coil provided in the first metal layer and the sixth partial coil provided in the third metal layer are connected in parallel, the seventh partial coil provided in the first metal layer and the eighth partial coil provided in the third metal layer are connected in parallel, and the ninth partial coil provided in the second metal layer and the tenth partial coil are connected in series. As shown in fig. 11, the fifth partial coil disposed in the first metal layer and the sixth partial coil disposed in the third metal layer are connected in parallel through a via hole, the seventh partial coil disposed in the first metal layer and the eighth partial coil disposed in the third metal layer are connected in parallel through a via hole, and the ninth partial coil and the tenth partial coil disposed in the second metal layer are connected in series through a line segment.

As shown in fig. 11, the fifth partial coil disposed in the first metal layer and the sixth partial coil disposed in the third metal layer are coupled to the ninth partial coil disposed in the second metal layer, and the seventh partial coil disposed in the first metal layer and the eighth partial coil disposed in the third metal layer are coupled to the tenth partial coil disposed in the second metal layer.

In one embodiment, the first ends of the fifth and sixth partial coils are connected by a first via and the second ends of the fifth and sixth partial coils are connected by a second via to realize a parallel connection.

The first end of the seventh partial coil is connected with the first end of the eighth partial coil through the third through hole, and the second end of the seventh partial coil is connected with the second end of the eighth partial coil through the fourth through hole, so that parallel connection is realized.

The second end of the ninth partial coil and the first end of the tenth partial coil are connected to realize a series connection. The first end of the ninth partial coil is connected to the output terminal RFout of the radio frequency signal, and the second end of the tenth partial coil is grounded, or the first end of the ninth partial coil is grounded, and the second end of the tenth partial coil is connected to the output terminal RFout of the radio frequency signal.

In one embodiment, a radio frequency front end module includes:

a substrate;

In this embodiment, the first primary coil, the second primary coil and the first secondary coil are disposed on the substrate, so that the integration level and the higher coupling coefficient can be considered, and the connection mode with the first chip can be combined, so that the better insertion loss and bandwidth performance of the rf power amplifier in the rf front-end module can be ensured on the premise of realizing high power performance.

It is to be understood that some of the details of the same or similar technical features in the above description have not been set forth in some embodiments or implementations in order to avoid redundancy, but substantially these details are also applicable in different embodiments or implementations.

The above description is only exemplary of the present invention and should not be construed as limiting the present invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims

1. A radio frequency power amplifier, comprising:

2. The rf Power amplifier of claim 1, wherein the rf Power amplifier supports Power Class 2 standard in 3GPP, and wherein a ratio of inductance values of the first primary coil and the first sub-coil is in a range of 1: 2-6; the ratio of the inductance values of the second primary coil and the second sub-coil is in the range of 1: [2-6 ].

3. The rf Power amplifier of claim 1, wherein the rf Power amplifier supports a Power Class 1 standard and/or a Power Class 1.5 standard in 3GPP, and wherein a ratio of inductance values of the first primary coil and the first sub-coil is in a range of 1: [7-13 ]; the ratio of the inductance values of the second primary coil and the second sub-coil is in the range of 1: [7-13 ].

4. The radio frequency power amplifier according to claim 1, wherein the radio frequency power amplifier supports transmission of radio frequency signals in N41 band and/or N77 band, and the inductance values of the first primary coil and the second primary coil are each between [0.4nH,2nH ].

5. The radio frequency power amplifier of claim 4, wherein the inductance values of the first and second primary coils are each between [0.4nH,1.2H ], (1.2 nH,1.5nH ], or (1.5 AnH,2nH ].

6. The radio frequency power amplifier of claim 1, wherein the fundamental output impedances of the first and second outputs of the first differential pair are each between [3 ohms, 8 ohms ], and the fundamental output impedances of the third and fourth outputs of the second differential pair are each between [3 ohms, 8 ohms ].

7. The RF power amplifier of claim 6, wherein the difference in fundamental output impedance of any two of the first, second, third and fourth outputs is less than 0.5 ohms.

8. The RF power amplifier of claim 6, wherein the fundamental output impedances of the first and second outputs of the first differential pair are each between [3 ohm, 4.5 ohm ], (4.5 ohm, 6 ohm ] or (6 ohm, 8 ohm ], and the fundamental output impedances of the third and fourth outputs of the second differential pair are each between [3 ohm, 4.5 ohm ], (4.5 ohm, 6 ohm ] or (6 ohm, 8 ohm ].

9. The radio frequency power amplifier according to claim 1, wherein the line widths of the first sub-coils of the first primary coils are the same, the coil lengths of the first sub-coils of the first primary coils are configured such that the ratio of the inductance values of the first primary coils and the first sub-coils is between 1: [1.5-13];

and/or the presence of a gas in the gas,

10. The radio frequency power amplifier of claim 1, wherein the first differential pair further comprises a first input and a second input, the first input receiving a first differential signal and the second input receiving a second differential signal; the second differential pair further comprises a third input terminal and a fourth input terminal, the third input terminal receives a third differential signal, and the fourth input terminal receives a fourth differential signal;

11. The rf power amplifier of claim 1, further comprising an input converting module, which receives an input rf signal and converts the input rf signal into multiple differential signals to be output to the first differential pair and the second differential pair.

12. The rf power amplifier of claim 11, wherein the input converting module comprises a first converting balun and a second converting balun, a first end of a primary coil of the first converting balun receives an input rf signal, and a second end of the primary coil of the first converting balun is grounded; a first end of the secondary coil of the first conversion balun is connected to the second input end of the first differential pair, and a second end of the secondary coil of the first conversion balun is connected to the first input end of the first differential pair; a first end of a primary coil of the second conversion balun receives an input radio frequency signal, and a second end of the primary coil of the second conversion balun is grounded; a first end of the secondary coil of the second converting balun is connected to the third input end of the second differential pair, and a second end of the secondary coil of the second converting balun is connected to the fourth input end of the second differential pair.

13. The radio frequency power amplifier of claim 12, wherein a first input of the first differential pair corresponds to the first output, and a second input of the first differential pair corresponds to the second output; the third input end of the second differential pair corresponds to the third output end, and the fourth input end of the second differential pair corresponds to the fourth output end.

14. The RF power amplifier of claim 1, wherein the ratio of the inductance values of the first primary coil and the first sub-coil is 1: [1.5-3.5], 1 (3.5-5.5 ], 1 (5.5-7), 1 (7-9 ] or 1 (9-13 ], and the ratio of the inductance values of the second primary coil and the second sub-coil is 1: [1.5-3.5], 1 (3.5-5.5 ], 1 (5.5-7), 1 (7-9 ] or 1 (9-13 ].

15. The radio frequency power amplifier according to claim 1, wherein a first end of the first sub-coil is connected to an output end of a radio frequency signal, a second end of the first sub-coil is connected to a first end of the second sub-coil, and a second end of the second sub-coil is grounded; the ratio of the inductance values of the first sub-coil and the second sub-coil is greater than 1.

16. The radio frequency power amplifier of claim 15, wherein a ratio of inductance values of the first and second sub-coils is between (1, 1.2).

17. A radio frequency power amplifier, comprising:

18. A radio frequency power amplifier, comprising:

a first primary coil, the first output terminal connected to a first terminal of the first primary coil, the second output terminal coupled to a second terminal of the first primary coil;

19. The radio frequency power amplifier of claim 18, further comprising a supply circuit that provides a supply voltage for the first differential pair and/or the second differential pair.

20. The radio frequency power amplifier of claim 19, wherein the supply voltage is less than or equal to 3.5V.

21. The radio frequency power amplifier of claim 18, wherein the first output of the first differential pair is connected to the first terminal of the first primary winding through a first capacitor, and the second output of the first differential pair is connected to the second terminal of the first primary winding through a second capacitor; the third output end of the second differential pair is connected to the first end of the second primary coil through a third capacitor, and the fourth output end of the second differential pair is connected to the second end of the second primary coil through a fourth capacitor.

22. The radio frequency power amplifier of claim 18, wherein a first end of the first sub-coil is connected to a signal output terminal, a second end of the first sub-coil is connected to a first end of the second sub-coil, and a second end of the second sub-coil is grounded through a fifth capacitor.

23. A radio frequency front end module, comprising:

a substrate;

24. The radio frequency front end module of claim 23, wherein the first primary coil, the second primary coil, and the first secondary coil are disposed on the substrate.

25. The radio frequency front end module of claim 23, wherein the first primary coil, the second primary coil, and the first secondary coil are disposed in a second chip, the second chip disposed on the substrate.

26. The rf front-end module of claim 25, wherein the second chip is an integrated passive device chip.

27. The RF front-end module of claim 25, wherein the first primary coil, the second primary coil and the first sub-coil are disposed in at least one metal layer of the second chip according to a ratio of inductance values of the first primary coil and the first sub-coil between 1: [1.5-13] and a ratio of inductance values of the second primary coil and the second sub-coil between 1: [1.5-13].

28. The RF front-end module of claim 23,

29. A radio frequency front end module, comprising:

a substrate;

the first primary coil, the second primary coil and the first sub-coil are disposed in at least one metal layer of the substrate.

30. The rf front-end module of claim 29, wherein the substrate comprises a first metal layer and a second metal layer sequentially disposed above and below, the first primary coil and the second primary coil being disposed in the first metal layer, the first secondary coil being disposed in the second metal layer;

or,

31. The rf front-end module of claim 29, wherein the substrate comprises a first metal layer, a second metal layer and a third metal layer sequentially disposed on top of one another, the first primary coil comprises a fifth partial coil disposed on the first metal layer and a sixth partial coil disposed on the third metal layer, the second primary coil comprises a seventh partial coil disposed on the first metal layer and an eighth partial coil disposed on the third metal layer, and the first sub-coil comprises a ninth partial coil and a tenth partial coil disposed on the second metal layer;

32. The RF front-end module of claim 29, wherein the first primary coil, the second primary coil, and the first sub-coil are disposed in at least one metal layer of the substrate such that a ratio of inductance values of the first primary coil and the first sub-coil is between 1: [1.5-13] and a ratio of inductance values of the second primary coil and the second sub-coil is between 1: [1.5-13].

33. A radio frequency front end module, comprising:

a substrate;