CN110601668A - Efficient power amplifier for internet of vehicles communication - Google Patents
Efficient power amplifier for internet of vehicles communication Download PDFInfo
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
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Abstract
The invention discloses a high-efficiency power amplifier facing Internet of vehicles communication, which comprises an input single-end-to-differential power distribution phase-shifting network, a first self-biased three-stacked amplifying network, a second self-biased three-stacked amplifying network, a third self-biased three-stacked amplifying network, a fourth self-biased three-stacked amplifying network and an output differential to single-end power synthesis phase-shifting network.
Description
Technical Field
The invention relates to the field of heterojunction bipolar transistor radio frequency power amplifiers and integrated circuits, in particular to a high-efficiency power amplifier chip circuit for vehicle networking communication, which aims at a transmitting module applied to vehicle networking communication (C-V2X) based on a cellular technology.
Background
With the rapid development of 5G wireless communication systems and radio frequency circuits, the car networking communication based on the 5.9 GHz frequency band cellular technology also has unprecedented application space, and the radio frequency front-end receiving and transmitting circuit of the car networking communication system also develops towards the directions of high performance, high integration and low power consumption. Therefore, the radio frequency power amplifier of the transmitter is urgently required by the internet of vehicles communication market to have high linear output power and efficiency, reduce heat dissipation and improve circuit stability, and the power amplifier chip is the key expected to meet the market requirement. However, when the integrated circuit process design is adopted to realize the power amplifier chip circuit in the car networking communication market, the performance and the cost of the power amplifier chip circuit are limited to a certain extent, and the performance and the cost are mainly reflected as follows:
(1) the power amplifier efficiency is limited under high back-off power, and the power consumption is higher: when the traditional AB type power amplifier realizes the amplification of a high peak-to-average ratio signal, the efficiency is lower under high back-off power, so the power consumption is larger.
(2) Power gain is limited, and insertion loss degradation is large: the 5.9 GHz frequency band is usually realized by adopting a semiconductor process with lower cost and lower characteristic frequency, so that the single-tube gain of the power amplifier is limited, the parasitic parameters of a transistor become larger along with the increase of the frequency band, the parasitic loss of a circuit is greatly deteriorated, and the performance of the circuit is influenced;
(3) limitations with lumped parameter circuit design: when a circuit matched with the traditional lumped parameter RLC is designed in the 5.9 GHz frequency band, devices with larger chip areas such as an inductor and a capacitor still need to be adopted, and the limitation is brought to the circuit design because the substrate loss is increased and the inductance Q value is lower.
The common circuit structures with high linear output power and efficiency amplifiers are many, the most typical is a Doherty single-ended power amplifier, but the difficulty is high when the traditional Doherty single-ended power amplifier needs to meet the power amplifier index requirements of the communication market of the internet of vehicles at the same time, mainly because:
(1) when the traditional Doherty single-ended power amplifier realizes the circuit design of a 5.9 GHz frequency band, the backspacing efficiency index is poor due to the influence of parasitic parameters;
(2) when the traditional Doherty single-ended power amplifier realizes the circuit design of a 5.9 GHz frequency band, an AB class driving amplifier is often adopted to drive the Doherty amplifier, so that when the Doherty amplifier works with the back-off efficiency and is subjected to the gain compensation effect of the AB class amplifier, the good load traction effect under the high back-off of a main circuit and an auxiliary circuit of the Doherty amplifier cannot be met at the same time, the back-off efficiency is reduced, and the linearity index is deteriorated.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a high-efficiency power amplifier for internet of vehicles communication, which combines the advantages of a differential stacked amplifier technology and a two-stage Doherty driving technology and has the advantages of high power, high gain, low cost and the like in a radio frequency microwave frequency band. Meanwhile, a heterojunction bipolar transistor with a self-bias structure is adopted, so that a complex power supply circuit of a depletion transistor is avoided.
The technical scheme for solving the technical problems is as follows: a high-efficiency power amplifier facing communication of the Internet of vehicles is characterized by comprising an input single-end-to-differential power distribution phase-shifting network, a first self-biased three-stacked amplifying network, a second self-biased three-stacked amplifying network, a third self-biased three-stacked amplifying network, a fourth self-biased three-stacked amplifying network and an output differential-to-single-end power synthesis phase-shifting network;
the input end of the input single-end to differential power distribution phase shift network is the input end of the whole power amplifier, the first, second, third and fourth output ends of the input single-end to differential power distribution phase shift network are respectively connected with the input ends of the first, third, second and fourth self-biased three-stacked amplifying networks, and the phase difference between the input end of the input single-end to differential power distribution phase shift network and the signal phase difference between the input end of the input single-end to differential power distribution phase shift network and the first, second, third and fourth output ends is respectively 0 degree, 90 degrees, 180 degrees and 270 degrees;
the output ends of the first, second, third and fourth self-biased three-stack amplifying networks are respectively connected with the first, third, second and fourth input ends of the output differential-to-single-ended power synthesis phase-shifting network, the output end of the output differential-to-single-ended power synthesis phase-shifting network is the output end of the whole power amplifier, and the signal phases of the output end of the output differential-to-single-ended power synthesis phase-shifting network and the first, second, third and fourth input ends are respectively different by 270 degrees, 180 degrees, 90 degrees and 0 degree.
Furthermore, the input end of the input single-end-to-differential power distribution phase-shifting network is connected with an inductor L1Inductance L1The other end of the transformer is connected with a coupling transformer T1Dotted terminal of primary coil and grounding capacitor C1Transformer T1The non-homonymous end of the primary coil of (1) is grounded; transformer T1The first, second and third homonymous terminals of the secondary coil are connected with the first, second and third output terminals of the input single-ended-to-differential power distribution phase-shifting network, and the transformer T1The non-homonymous end of the stage coil is connected with the fourth output end of the input single-ended-to-differential power distribution phase-shifting network.
The beneficial effects of the further scheme are as follows: the input single-ended to differential power distribution phase-shifting network adopted by the invention can realize the power distribution of the input radio-frequency signals, can also carry out impedance matching and phase adjustment on the radio-frequency input signals, and simultaneously realizes the conversion from the single-ended signals to the differential signals, thereby ensuring the phase difference of the differential signals. The phase difference between the input end of the input single-ended-to-differential power distribution phase shift network and the signal phase difference between the input end of the.
Further, the input end of the Nth self-biased three-stack amplifying network is sequentially connected with an inductor L in seriesqjInductor LpjAnd a DC blocking capacitor CpjDc blocking capacitor CpjIs connected with a heterojunction bipolar transistor QpjBase electrode of (1), inductor LqjAnd an inductance LpjThe connecting node is also connected with a grounding capacitor C in parallelqjHetero-junction bipolar transistor QpjCollector of the heterojunction bipolar transistor QsjEmitter of (2), heterojunction bipolar transistor QsjCollector of the heterojunction bipolar transistor QujEmitter of (2), heterojunction bipolar transistor QujCollector electrode of (2) is connected with an inductor LujInductance LujThe other end of the capacitor is connected with a grounding capacitor CvjAnd an output of the Nth self-biased three-stack amplification network; heterojunction bipolar transistor QpjThe base electrode of the resistor is also connected with a resistor RpjResistance RpjIs connected with a heterojunction bipolar transistor QcjEmitter of (2), heterojunction bipolar transistor QcjCollector connecting resistance Rbj，RbjIs connected with a heterojunction bipolar transistor QujCollector of (2), heterojunction bipolar transistor QcjThe base electrode of the capacitor is simultaneously connected with a grounded capacitor CajResistance RajHeterojunction bipolar transistor QajCollector and base of (1), heterojunction bipolar transistor QajEmitter electrode of (3) is grounded, and resistor RajIs connected with a heterojunction bipolar transistor QujA collector electrode of (a); heterojunction bipolar transistor QsjBase electrode connecting resistance RsjAnd a ground capacitor CsjResistance RsjThe other end of the resistor is connected with a grounding resistor RtjAnd heterojunction bipolar transistor QgjEmitter of (2), heterojunction bipolar transistor QgjCollector and base simultaneous connection resistor RcjResistance RcjIs connected with a heterojunction bipolar transistor QujA collector electrode of (a); heterojunction bipolar transistor QujBase electrode connecting resistance RujAnd a ground capacitor CujResistance RujThe other end of the resistor is connected with a grounding resistor RvjAnd heterojunction bipolar transistor QmjEmitter of (2), heterojunction bipolar transistor QmjCollector and base simultaneous connection resistor RdjResistance RdjIs connected with a heterojunction bipolar transistor QujWherein N is one, two, three, four, j =1, 2, 3, 4. Heterojunction bipolar transistor Qu1And heterojunction bipolar transistor Qu2Through a capacitor C between the emitters2Connected, heterojunction bipolar transistor Qu3And heterojunction bipolar transistor Qu4Through a capacitor C between the emitters3Connecting; the first self-biased three-stack amplifying network and the second self-biased three-stack amplifying network work in a deep AB amplifying state, and the third self-biased three-stack amplifying network and the fourth self-biased three-stack amplifying network work in a shallow C amplifying state.
The beneficial effects of the further scheme are as follows: the design structure of the Nth self-biased three-stack amplification network adopts a structure of a three-stack heterojunction bipolar transistor amplifier, so that the power capacity and the power gain of the amplifier can be obviously improved, and the output impedance and the load carrying capacity of the amplifier are improved. Meanwhile, the first self-biased three-stack amplifying network is combined with the second self-biased three-stack amplifying network, and the third self-biased three-stack amplifying network is combined with the fourth self-biased three-stack amplifying network to form two pairs of differential amplifier structures, so that the deterioration of high-frequency parasitic parameters of transistors on circuit indexes can be inhibited.
Furthermore, the first and second input ends of the output differential-to-single-ended power synthesis phase-shifting network are connected with the transformer T2The third and fourth input ends of the power synthesis phase-shifting network for converting output differential into single end are connected with a transformer T2Non-dotted and dotted terminals of the second secondary winding, transformer T2An inductor L is arranged between the middle taps of the first secondary coil and the second secondary coil3Interconnection, transformer T2The middle tap of the first secondary coil is also connected with an inductor L2，L2The other end of the capacitor is connected with a bypass grounding capacitor C4Collector bias voltage Vc1Transformer T2Primary coil's dotted terminal connection inductance L4And a ground capacitor C5Inductance L4The other end of the differential transformer is connected with the output end of the output differential-to-single-end power synthesis phase-shifting network, and the transformer T2The non-dotted terminal of the primary coil of (a) is grounded.
The beneficial effects of the further scheme are as follows: the output differential-to-single-ended power synthesis phase-shifting network adopted by the invention not only can realize power synthesis of four paths of differential radio-frequency signals, but also can convert the four paths of differential signals into single-ended signals, has small insertion loss and simultaneously ensures the output power and efficiency of the amplifier.
Drawings
FIG. 1 is a schematic block diagram of a power amplifier of the present invention;
fig. 2 is a circuit diagram of a power amplifier according to the present invention.
Detailed Description
Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It is to be understood that the embodiments shown and described in the drawings are merely exemplary and are intended to illustrate the principles and spirit of the invention, not to limit the scope of the invention.
The embodiment of the invention provides a high-efficiency power amplifier facing Internet of vehicles communication, which comprises an input single-ended-to-differential power distribution phase-shifting network, a first self-biased three-stacked amplifying network, a second self-biased three-stacked amplifying network, a third self-biased three-stacked amplifying network, a fourth self-biased three-stacked amplifying network and an output differential-to-single-ended power synthesis phase-shifting network.
As shown in fig. 1, the input end of the input single-ended to differential power distribution phase shift network is the input end of the whole power amplifier, the first, second, third, and fourth output ends thereof are respectively connected to the input ends of the first, third, second, and fourth self-biased three-stacked amplification networks, and the phase difference between the input end of the input single-ended to differential power distribution phase shift network and the first, second, third, and fourth output ends is 0 degree, 90 degrees, 180 degrees, and 270 degrees, respectively;
the output ends of the first, second, third and fourth self-biased three-stack amplifying networks are respectively connected with the first, third, second and fourth input ends of the output differential-to-single-ended power synthesis phase-shifting network, the output end of the output differential-to-single-ended power synthesis phase-shifting network is the output end of the whole power amplifier, and the signal phases of the output end of the output differential-to-single-ended power synthesis phase-shifting network and the first, second, third and fourth input ends are respectively different by 270 degrees, 180 degrees, 90 degrees and 0 degree.
As shown in FIG. 2, the input end of the input single-ended to differential power distribution phase-shifting network is connected with an inductor L1Inductance L1The other end of the transformer is connected with a coupling transformer T1Dotted terminal of primary coil and grounding capacitor C1Transformer T1The non-homonymous end of the primary coil of (1) is grounded; transformer T1The first, second and third homonymous terminals of the secondary coil are connected with the first, second and third output terminals of the input single-ended-to-differential power distribution phase-shifting network, and the transformer T1The non-homonymous end of the stage coil is connected with the fourth output end of the input single-ended-to-differential power distribution phase-shifting network; .
Output of Nth self-biased three-stack amplifying networkInput end series inductance L in sequenceqjInductor LpjAnd a DC blocking capacitor CpjDc blocking capacitor CpjIs connected with a heterojunction bipolar transistor QpjBase electrode of (1), inductor LqjAnd an inductance LpjThe connecting node is also connected with a grounding capacitor C in parallelqjHetero-junction bipolar transistor QpjCollector of the heterojunction bipolar transistor QsjEmitter of (2), heterojunction bipolar transistor QsjCollector of the heterojunction bipolar transistor QujEmitter of (2), heterojunction bipolar transistor QujCollector electrode of (2) is connected with an inductor LujInductance LujThe other end of the capacitor is connected with a grounding capacitor CvjAnd an output of the Nth self-biased three-stack amplification network; heterojunction bipolar transistor QpjThe base electrode of the resistor is also connected with a resistor RpjResistance RpjIs connected with a heterojunction bipolar transistor QcjEmitter of (2), heterojunction bipolar transistor QcjCollector connecting resistance Rbj，RbjIs connected with a heterojunction bipolar transistor QujCollector of (2), heterojunction bipolar transistor QcjThe base electrode of the capacitor is simultaneously connected with a grounded capacitor CajResistance RajHeterojunction bipolar transistor QajCollector and base of (1), heterojunction bipolar transistor QajEmitter electrode of (3) is grounded, and resistor RajIs connected with a heterojunction bipolar transistor QujA collector electrode of (a); heterojunction bipolar transistor QsjBase electrode connecting resistance RsjAnd a ground capacitor CsjResistance RsjThe other end of the resistor is connected with a grounding resistor RtjAnd heterojunction bipolar transistor QgjEmitter of (2), heterojunction bipolar transistor QgjCollector and base simultaneous connection resistor RcjResistance RcjIs connected with a heterojunction bipolar transistor QujA collector electrode of (a); heterojunction bipolar transistor QujBase electrode connecting resistance RujAnd a ground capacitor CujResistance RujThe other end of the resistor is connected with a grounding resistor RvjAnd heterojunction bipolar transistor QmjOf the emitter electrodeMass-junction bipolar transistor QmjCollector and base simultaneous connection resistor RdjResistance RdjIs connected with a heterojunction bipolar transistor QujWherein N is one, two, three, four, j =1, 2, 3, 4. Heterojunction bipolar transistor Qu1And heterojunction bipolar transistor Qu2Through a capacitor C between the emitters2Connected, heterojunction bipolar transistor Qu3And heterojunction bipolar transistor Qu4Through a capacitor C between the emitters3Connecting; the first self-biased three-stack amplification network and the second self-biased three-stack amplification network work in a deep AB amplification state, and the third self-biased three-stack amplification network and the fourth self-biased three-stack amplification network work in a shallow C amplification state.
The first and second input ends of the output differential-to-single-ended power synthesis phase-shifting network are connected with a transformer T2The third and fourth input ends of the power synthesis phase-shifting network for converting output differential into single end are connected with a transformer T2Non-dotted and dotted terminals of the second secondary winding, transformer T2An inductor L is arranged between the middle taps of the first secondary coil and the second secondary coil3Interconnection, transformer T2The middle tap of the first secondary coil is also connected with an inductor L2，L2The other end of the capacitor is connected with a bypass grounding capacitor C4Collector bias voltage Vc1Transformer T2Primary coil's dotted terminal connection inductance L4And a ground capacitor C5Inductance L4The other end of the differential transformer is connected with the output end of the output differential-to-single-end power synthesis phase-shifting network, and the transformer T2The non-dotted terminal of the primary coil of (a) is grounded.
The specific working principle and process of the present invention are described below with reference to fig. 2:
radio frequency input signal through input terminal RFinThe input single-end-to-differential power distribution phase-shifting network is used for impedance transformation matching, and then the input single-end-to-differential power distribution phase-shifting network simultaneously enters the input ends of the first, second, third and fourth self-biased three-stack amplifying networks in the form of differential signals with equal power.
1) When the power of the differential signal is lower than the first and third self-biasWhen the three-stack amplifying network is in a saturated input power point, only the first self-biased three-stack amplifying network and the third self-biased three-stack amplifying network work at the moment, output signals exist, the second self-biased three-stack amplifying network and the fourth self-biased three-stack amplifying network do not work, no output signal exists, radio frequency signals are output by the output ends of the first self-biased three-stack amplifying network and the third self-biased three-stack amplifying network, then the radio frequency signals enter the output differential-to-single-ended power synthesis phase-shifting network, differential signals are converted into single-outOutputting;
2) when the power of the differential signal is higher than the saturated input power point of the first self-biased three-stack amplification network and the third self-biased three-stack amplification network, the first self-biased three-stack amplification network to the fourth self-biased three-stack amplification network work, the output ends of the first self-biased three-stack amplification network to the fourth self-biased three-stack amplification network output four paths of radio frequency signals and respectively enter the output differential to single-ended power synthesis phase-shifting network, the four paths of differential signals are subjected to power synthesis and then converted into single-ended signals, and then the single-ended signals are outputoutAnd (6) outputting.
Based on the circuit analysis, the difference between the high-efficiency power amplifier for the internet of vehicles communication and the traditional amplifier structure based on the integrated circuit process is that the core architecture adopts a self-biased three-stacked amplification network and a transformer, so that the structure equivalent to the working mode of the Doherty power amplifier is realized:
the self-biased three-stack amplifying network is different from the traditional single transistor in structure, and the details are not repeated herein;
the self-biased three-stack amplifying network is different from a Cascode differential amplifier in that: the cascade base compensation capacitor of the common base tube of the Cascode transistor is a capacitor with a large capacitance value and is used for realizing alternating current grounding of the base, the base of the differential self-biased three-stack amplification network is a matching capacitor with a small capacitance value and realizes synchronous swing of base voltage, meanwhile, the Cascode amplifier is formed by connecting two tubes in series and interconnecting the self-biased three-stack amplification network is formed by connecting three tubes in series and interconnecting the self-biased three-stack amplification network, so that the circuit breakdown voltage can be remarkably improved, and the impedance matching of the transistors among stacks can be improved;
the amplifier with the Doherty structure is realized by utilizing the self-biased three-stacked amplifying network, and compared with the traditional single-ended amplifier structure, the suppression characteristic of the circuit on parasitic parameters can be obviously improved, and the index of a high-frequency circuit is improved.
In the whole radio frequency power amplifier aiming at the communication of the Internet of vehicles, the size of a transistor and the sizes of other resistors and capacitors are determined after the gain, the back-off efficiency, the output power and other indexes of the whole circuit are comprehensively considered, and through the layout design and the reasonable layout in the later period, the required indexes can be better realized, and the high-power output capacity, the high-back-off efficiency, the high-power gain and the good input-output matching characteristic are realized.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (4)
1. A high-efficiency power amplifier facing communication of the Internet of vehicles is characterized by comprising an input single-ended-to-differential power distribution phase-shifting network, a first self-biased three-stacked amplifying network, a second self-biased three-stacked amplifying network, a third self-biased three-stacked amplifying network and a fourth self-biased three-stacked amplifying network, wherein the output differential-to-single-ended power synthesis phase-shifting network is output by the third self-biased three-stacked amplifying network;
the input end of the input single-ended to differential power distribution phase shift network is the input end of the whole power amplifier, the first, second, third and fourth output ends of the input single-ended to differential power distribution phase shift network are respectively connected with the input ends of the first, third, second and fourth self-biased three-stacked amplifying networks, and the phase difference between the input end of the input single-ended to differential power distribution phase shift network and the signal phase difference between the input end of the input single-ended to differential power distribution phase shift network and the first, second, third and fourth output ends is 0 degree, 90 degrees, 180 degrees and 270 degrees respectively;
the output ends of the first, second, third and fourth self-biased three-stacked amplifying networks are respectively connected with the first, third, second and fourth input ends of the output differential-to-single-ended power synthesis phase-shifting network, the output end of the output differential-to-single-ended power synthesis phase-shifting network is the output end of the whole power amplifier, and the phase difference between the output end of the output differential-to-single-ended power synthesis phase-shifting network and the signal phase difference between the output end of the output differential-to-single-ended power synthesis phase-shifting network and the first, second, third and fourth input ends is 270 degrees, 180 degrees, 90 degrees and 0 degrees respectively.
2. The vehicle networking communication-oriented high-efficiency power amplifier according to claim 1, wherein an inductor L is connected to an input end of the input single-ended-to-differential power distribution phase shifting network1Inductance L1The other end of the transformer is connected with a coupling transformer T1Dotted terminal of primary coil and grounding capacitor C1Transformer T1The non-homonymous end of the primary coil of (1) is grounded; transformer T1The first, second and third homonymous terminals of the secondary coil are connected with the first, second and third output terminals of the input single-ended-to-differential power distribution phase-shifting network, and the transformer T1The non-homonymous end of the stage coil is connected with the fourth output end of the input single-ended-to-differential power distribution phase-shifting network.
3. The vehicle networking communication-oriented high-efficiency power amplifier according to claim 1, wherein an input end of the Nth self-biased three-stack amplifying network is sequentially connected with an inductor L in seriesqjInductor LpjAnd a DC blocking capacitor CpjDc blocking capacitor CpjIs connected with a heterojunction bipolar transistor QpjBase electrode of (1), inductor LqjAnd an inductance LpjThe connecting node is also connected with a grounding capacitor C in parallelqjHetero-junction bipolar transistor QpjCollector of the heterojunction bipolar transistor QsjEmitter of (2), heterojunction bipolar transistor QsjCollector of the heterojunction bipolar transistor QujEmitter of (2), heterojunction bipolar transistor QujCollector electrode of (2) is connected with an inductor LujInductance LujThe other end of the capacitor is connected with a grounding capacitor CvjAnd an output of the Nth self-biased three-stack amplification network; heterojunction bipolar transistor QpjThe base electrode of the resistor is also connected with a resistor RpjResistance RpjIs connected with a heterojunction bipolar transistor QcjEmitter of (2), heterojunction bipolar transistor QcjCollector connecting resistance Rbj，RbjAnother end of the first and second electrodes is connected with a heterojunction bipolar crystalTransistor QujCollector of (2), heterojunction bipolar transistor QcjThe base electrode of the capacitor is simultaneously connected with a grounded capacitor CajResistance RajHeterojunction bipolar transistor QajCollector and base of (1), heterojunction bipolar transistor QajEmitter electrode of (3) is grounded, and resistor RajIs connected with a heterojunction bipolar transistor QujA collector electrode of (a); heterojunction bipolar transistor QsjBase electrode connecting resistance RsjAnd a ground capacitor CsjResistance RsjThe other end of the resistor is connected with a grounding resistor RtjAnd heterojunction bipolar transistor QgjEmitter of (2), heterojunction bipolar transistor QgjCollector and base simultaneous connection resistor RcjResistance RcjIs connected with a heterojunction bipolar transistor QujA collector electrode of (a); heterojunction bipolar transistor QujBase electrode connecting resistance RujAnd a ground capacitor CujResistance RujThe other end of the resistor is connected with a grounding resistor RvjAnd heterojunction bipolar transistor QmjEmitter of (2), heterojunction bipolar transistor QmjCollector and base simultaneous connection resistor RdjResistance RdjIs connected with a heterojunction bipolar transistor QujWherein N is one, two, three, four, j =1, 2, 3, 4;
heterojunction bipolar transistor Qu1And heterojunction bipolar transistor Qu2Through a capacitor C between the emitters2Connected, heterojunction bipolar transistor Qu3And heterojunction bipolar transistor Qu4Through a capacitor C between the emitters3Connecting; the first self-biased three-stack amplifying network and the second self-biased three-stack amplifying network work in a deep AB amplifying state, and the third self-biased three-stack amplifying network and the fourth self-biased three-stack amplifying network work in a shallow C amplifying state.
4. The vehicle networking communication-oriented high-efficiency power amplifier according to claim 1, wherein the first input end and the second input end of the output differential-to-single-ended power synthesis phase-shifting network are connected with a transformer T2The non-dotted terminal and the dotted terminal of the first secondary winding,the third and fourth input ends of the output differential-to-single-ended power synthesis phase-shifting network are connected with a transformer T2Non-dotted and dotted terminals of the second secondary winding, transformer T2An inductor L is arranged between the middle taps of the first secondary coil and the second secondary coil3Interconnection, transformer T2The middle tap of the first secondary coil is also connected with an inductor L2，L2The other end of the capacitor is connected with a bypass grounding capacitor C4Collector bias voltage Vc1Transformer T2Primary coil's dotted terminal connection inductance L4And a ground capacitor C5Inductance L4The other end of the differential-to-single-ended power synthesis phase-shifting network is connected with the output end of the output differential-to-single-ended power synthesis phase-shifting network, and a transformer T2The non-dotted terminal of the primary coil of (a) is grounded.
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| CN114362685A (en) * | 2021-12-14 | 2022-04-15 | 成都嘉纳海威科技有限责任公司 | Power amplifier based on high Q value differential coupling technology |
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| CN110601668B (en) | 2024-03-08 |
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