CN113556092A - Radio frequency power amplifier based on transformer matching network - Google Patents
Radio frequency power amplifier based on transformer matching network Download PDFInfo
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- CN113556092A CN113556092A CN202111088952.XA CN202111088952A CN113556092A CN 113556092 A CN113556092 A CN 113556092A CN 202111088952 A CN202111088952 A CN 202111088952A CN 113556092 A CN113556092 A CN 113556092A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/32—Insulating of coils, windings, or parts thereof
- H01F27/323—Insulation between winding turns, between winding layers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2819—Planar transformers with printed windings, e.g. surrounded by two cores and to be mounted on printed circuit
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Abstract
The embodiment of the invention discloses a radio frequency power amplifier based on a transformer matching network, which comprises an input matching network, a first-stage single-path amplification circuit, a first inter-stage matching network, a second-stage double-path amplification circuit, a second inter-stage matching network, a third-stage four-path amplification circuit and an output matching network which are connected in sequence; the first inter-stage matching network comprises a first transformer T1, the second inter-stage matching network comprises two second transformers T2, and the output matching network comprises two third transformers T3 and a fourth transformer T4; by adopting transformer matching between the stage matching and the output matching, the layout area is effectively reduced, no extra insertion loss is brought, and the optimization effect of gain and output return loss is remarkably improved.
Description
Technical Field
The invention relates to the technical field of power amplifiers, in particular to a radio frequency power amplifier based on a transformer matching network.
Background
The radio frequency power amplifier is an important component of the transmitter, is positioned at the final stage of the transmitter, and mainly has the functions of carrying out distortion-free amplification on a radio frequency signal of a previous stage and sending out the amplified signal from an antenna end. For different application scenarios, the power amplifier needs to achieve different output powers, linearity, efficiencies, and the like, and thus, it is ensured that a signal can be received safely, effectively, and reliably at a proper distance. The existing conventional impedance matching network may be formed by lumped-parameter reactance elements (such as capacitors and inductors) or by distributed-parameter elements (such as microstrip lines and strip lines). Typical matching network topologies are "L" type, made up of lumped elements "
"type and" T "type matching networks, as well as distributed transmission line matching networks.
In the N77 (3.3 GHz-4.2 GHz) band of 5G mobile communication technology, because each component at high frequency generates different levels of parasitic effect, and in the case of large output power, a larger total area of transistor emitters is required, which means that a plurality of transistors are connected in parallel to achieve the output power required by the design. The parallel connection of a plurality of transistors results in very small impedance values at the input end and the output end, and the matching is very difficult to design, no matter the transistors are L-shaped "
The matching network of the ' type or the ' T ' type can carry out matching only by cascading a plurality of topological structures or adding reactance elements. However, the addition of the cascade topology structure or the reactance element not only increases the layout area, but also increases the cost of the tape-out; introducing one more topology or reactance element will also result in increased insertion loss of the matching structure, which will have a large impact on the gain and output power of the overall circuit.
Disclosure of Invention
The embodiment of the invention provides a radio frequency power amplifier based on a transformer matching network, which can effectively reduce the layout area, does not bring extra insertion loss, and obviously improves the optimization effect of gain and output return loss.
In order to solve the above technical problems, an aspect of the present invention provides a transformer matching network-based radio frequency power amplifier, which includes an input matching network, a first-stage single-path amplification circuit, a first inter-stage matching network, a second-stage two-path amplification circuit, a second inter-stage matching network, a third-stage four-path amplification circuit, and an output matching network, which are connected in sequence;
the first inter-stage matching network comprises a first transformer T1, the second inter-stage matching network comprises two second transformers T2, and the output matching network comprises two third transformers T3 and a fourth transformer T4;
after the single-ended radio frequency input signal RFin passes through the input matching network and the first-stage single-path amplifying circuit in sequence, the two differential signals are respectively output to two input ends of the second-stage two-way amplifying circuit through the first transformer T1, the two paths of differential signals are amplified by the second-stage two-path amplifying circuit and then respectively output to the two second transformers T2, the four differential signals are respectively output to four input ends of the third stage four-way amplifying circuit through the two second transformers T2, the four differential signals are amplified by the third stage four amplification circuit and then respectively output to the two third transformers T3, the two differential signals are converted into two differential signals by the third transformer T3 and are respectively output to two input ends of the fourth transformer T4, and the two differential signals are combined into one radio frequency output signal RFout by the fourth transformer T4 to be output.
Furthermore, the four input ends of the third-stage four-way amplifying circuit are grouped in pairs, and two output ends corresponding to the two input ends of each group are a group of output ends;
two input ends of the first transformer T1 are respectively connected with the output end of the first-stage single-path amplifying circuit and a power signal Vcc1, and two output ends of the first transformer T1 are respectively connected with two input ends of the second-stage double-path amplifying circuit; the two second transformers T2 are respectively in one-to-one correspondence with the two output ends of the second-stage two-way amplifying circuit, one input end of each second transformer T2 is connected with the corresponding output end of the second-stage two-way amplifying circuit, the other input end of each second transformer T2 is connected with a power signal Vcc2, and the two output ends of each second transformer T2 are respectively connected with the two input ends of the same group of the third-stage four-way amplifying circuit; two input ends of each third transformer T3 are respectively connected to two output ends of the same group of the third stage four-way amplifying circuit, two output ends of each third transformer T3 are respectively connected to one input end and a ground end of the fourth transformer T4, one output end of the fourth transformer T4 is used for outputting the rf output signal RFout, and the other output end is grounded.
Further, the first-stage single-path amplifying circuit includes a first transistor Q1, the second-stage two-path amplifying circuit includes two second transistors Q2, the third-stage four-path amplifying circuit includes four third transistors Q3, bases and collectors of the first transistors Q1 correspond to input terminals and output terminals of the first-stage single-path amplifying circuit, bases of the two second transistors Q2 correspond to input terminals of the second-stage two-path amplifying circuit, collectors of the two second transistors Q2 correspond to output terminals of the second-stage two-path amplifying circuit, bases of the four third transistors Q3 correspond to input terminals of the third-stage four-path amplifying circuit, collectors of the four third transistors Q3 correspond to output terminals of the third-stage four-path amplifying circuit, the first transistors Q1, The emitters of the second transistor Q2 and the third transistor Q3 are both grounded.
Further, the rf power amplifier further comprises a negative feedback network connected between the base and the collector of the first transistor Q1, the negative feedback network comprising a first resistor R1 and a first capacitor C1 connected in series;
the radio frequency power amplifier further comprises a second resistor R2, the second resistor R2 is connected in series between the input matching network and the base of the first transistor Q1 and in parallel with the negative feedback network.
Furthermore, the input matching network comprises inductors L1 and L2 and capacitors C2 and C3, wherein one end of the capacitor C2 is connected in parallel with one end of the inductor L1 and is used for inputting a single-ended radio frequency input signal RFin, the other end of the capacitor C2 is connected with one end of the capacitor C3, the other end of the capacitor C3 is connected with the base of the first transistor Q1, the other end of the inductor L1 is grounded, one end of the inductor L2 is connected between the capacitors C2 and C3, and the other end of the inductor L2 is grounded.
Further, the first transformer T1 and the second transformer T2 are symmetrical inter-wound transformers, the third transformer T3 and the fourth transformer T4 are laminated step-up transformers, and the turns ratios of the primary coil and the secondary coil of the symmetrical inter-wound transformers and the laminated step-up transformers are both equal
In the meantime.
Furthermore, the laminated step-up transformer comprises a first metal layer, a second metal layer and a third metal layer which are sequentially laminated, each metal layer is provided with two connecting ends, an insulating layer is arranged between every two adjacent metal layers, a through hole is formed in each insulating layer, the first metal layer and the third metal layer are secondary coils, one end of the first metal layer is connected with one end of the third metal layer through the through hole, and the second metal layer is a primary coil.
Furthermore, each metal layer is annular, so that a middle area surrounded by the metal layer is defined, the through hole is located in the middle area, and one end of the first metal layer and one end of the third metal layer are bent and extended to the middle area to be connected through the through hole located in the middle area.
Further, the bent portion at the one end of the first metal layer and the bent portion at the one end of the third metal layer overlap in the stacking direction.
Further, the bent portion at the end of the first metal layer and the bent portion at the end of the third metal layer are projected on a straight line in the stacking direction.
Has the advantages that: the invention relates to a radio frequency power amplifier based on a transformer matching network, which comprises an input matching network, a first-stage amplifying circuit, a first-stage matching network, a second-stage amplifying circuit, a second-stage matching network, a third-stage amplifying circuit and an output matching network, wherein the input matching network is connected with the input matching network; the first-stage amplifying circuit comprises a first amplifier, the second-stage amplifying circuit comprises two second amplifiers, the third-stage amplifier comprises four third amplifiers, the four third amplifiers are divided into two groups, the first inter-stage matching network comprises a first transformer T1, the second inter-stage matching network comprises two second transformers T2, and the output matching network comprises two third transformers T3 and a fourth transformer T4; a single-ended radio frequency input signal RFin sequentially passes through the input matching network and the first-stage amplifier, and is changed into two paths of differential signals through the first transformer T1 to be respectively input to the two second amplifiers, the two second transformers T2 are respectively connected with the two second amplifiers in a one-to-one correspondence manner, each second transformer T2 changes the single-ended signal from the corresponding second amplifier into two paths of differential signals to be respectively input to the two third amplifiers in the same group, the two third transformers T3 are respectively connected with the two groups of third amplifiers, each third transformer T3 synthesizes the differential signals from the two third amplifiers in the same group into a single-ended signal to be output to the fourth transformer T4, and the fourth transformer T4 synthesizes the single-ended signals from the two third transformers T3 into a single-ended radio frequency output signal RFout to be output, therefore, in the scheme, transformer matching is adopted for both interstage matching and output matching, compared with the existing cascade of a plurality of matching topological structures, the layout area is effectively reduced, extra insertion loss is not brought, and the optimization effect of gain and output return loss is remarkably improved; and finally, 4 paths of power synthesis of the final-stage amplifying circuit is adopted, so that higher output power is obtained while other indexes are not influenced and deteriorated.
Drawings
The technical solution and the advantages of the present invention will be apparent from the following detailed description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 is a circuit diagram of a radio frequency power amplifier provided by an embodiment of the invention;
FIG. 2 is a schematic diagram of a symmetrical intertwined transformer provided by an embodiment of the present invention;
FIG. 3 is a layout of a symmetric inter-wound transformer according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a connection structure of a third transformer and a fourth transformer when the third transformer and the fourth transformer are stacked step-up transformers according to an embodiment of the present invention;
FIG. 5 is an exploded schematic view of the stacked boost transformer shown in FIG. 4;
FIG. 6 is a schematic diagram of another structure of a stacked boost transformer according to an embodiment of the present invention;
FIG. 7 is a cross-sectional view of the stacked boost transformer shown in FIG. 6;
FIG. 8 is a waveform diagram of a phase simulation of the stacked boost transformer shown in FIG. 6;
FIG. 9 is a graph of insertion loss and amplitude simulation waveforms for the stacked boost transformer shown in FIG. 6;
fig. 10 is a waveform diagram of a standing wave simulation of the stacked step-up transformer shown in fig. 6.
Detailed Description
Referring to the drawings, wherein like reference numbers refer to like elements, the principles of the present invention are illustrated as being implemented in a suitable computing environment. The following description is based on illustrated embodiments of the invention and should not be taken as limiting the invention with regard to other embodiments that are not detailed herein.
Referring to fig. 1, a radio frequency power amplifier 100 based on a transformer matching network according to an embodiment of the present invention specifically includes an input matching network 10, a first-stage single-path amplifier circuit 20, a first-stage matching network 30, a second-stage two-path amplifier circuit 40, a second-stage matching network 50, a third-stage four-path amplifier circuit 60, and an output network matching 70, which are sequentially connected.
The first inter-stage matching network 30 includes a first transformer T1, the second inter-stage matching network 50 includes two second transformers T2, and the output matching network 70 includes two third transformers T3 and a fourth transformer T4.
After the single-ended rf input signal RFin passes through the input matching network 10 and the first stage single-circuit amplifying circuit 20 in sequence, the two differential signals are respectively output to two input ends of the second-stage two-way amplifying circuit 40 through the first transformer T1, the two differential signals are amplified by the second-stage two-way amplifying circuit 40 and then respectively output to the two second transformers T2, the four differential signals are respectively output to four input terminals of the third stage four-way amplifying circuit 60 via the two second transformers T2, the four differential signals are amplified by the third stage four amplification circuit 60 and then output to the two third transformers T3 respectively, the two differential signals are converted into two differential signals by the third transformer T3 and are respectively output to two input ends of the fourth transformer T4, and the two differential signals are combined into one radio frequency output signal RFout by the fourth transformer T4 to be output.
Therefore, the interstage matching network and the output matching network can realize that the input single-ended signal is firstly changed into two paths of differential signals, then the two paths of differential signals are changed into four paths of differential signals, then the four paths of differential signals are synthesized into two paths of differential signals, and finally the two paths of differential signals are synthesized into a single-ended signal to be output, so that higher output power is obtained while other indexes are not influenced and deteriorated; in addition, the interstage matching network and the output matching network are both realized through transformers, compared with the existing cascade connection of a plurality of matching topological structures, the layout area is effectively reduced, meanwhile, extra insertion loss is not brought, and the optimization effect of gain and output return loss is remarkably improved.
In some embodiments, the first to third stage amplifying circuits may be implemented by HBT transistors, and specifically, as shown in fig. 1, the first stage single-circuit amplifying circuit 20 includes one first transistor Q1, the second stage two-circuit amplifying circuit 40 includes two second transistors Q2, and the third stage four-circuit amplifying circuit 60 includes four third transistors Q3. The bases and collectors of the first transistors Q1 correspond to the input and output ends of the first-stage one-way amplifying circuit 20, the bases of the two second transistors Q2 correspond to the two input ends of the second-stage two-way amplifying circuit 40, the collectors of the two second transistors Q2 correspond to the two output ends of the second-stage two-way amplifying circuit 40, the bases of the four third transistors Q3 correspond to the four input ends of the third-stage four-way amplifying circuit 60, and the collectors of the four third transistors Q3 correspond to the four output ends of the third-stage four-way amplifying circuit 60. The four input terminals of the third-stage four-way amplifying circuit 60 are grouped into one group two by two, and the two output terminals corresponding to the two input terminals of each group are grouped into one group of output terminals, that is, the two third transistors Q3 are grouped into one group.
In a specific embodiment, two input terminals of a first transformer T1 are respectively connected to the collector of the first transistor Q1 and the power signal Vcc1, two output terminals of the first transformer T1 are respectively connected to the bases of two second transistors Q2, the two second transformers T2 are respectively in one-to-one correspondence with two output terminals of the second-stage two-way amplifying circuit 40, that is, two second transformers T2 are respectively in one-to-one correspondence with two second transistors Q2, two input terminals of each second transformer T2 are respectively connected to the collector of the corresponding second transistor Q2 and the power signal Vcc2, two output terminals of one second transformer T2 are respectively connected to the bases of two third transistors Q3 of the same group, and two output terminals of another second transformer T2 are respectively connected to two third transistors Q3 of another group. Two input terminals of one third transformer T3 are connected to the collectors of the two third transistors Q3 of the same group, respectively, and two input terminals of the other third transformer T3 are connected to the collectors of the two third transistors Q3 of the other group, respectively. In addition, one of the output terminals of the two third transformers T3 is grounded, the other output terminals of the two third transformers T3 are respectively connected to the two input terminals of the fourth transformer T4, one output terminal of the fourth transformer T4 is grounded, and the other output terminal is used for outputting the rf output signal RFout.
For the third-stage fourth-path amplifying circuit 60, in the embodiment, two paths of 2 transistors are connected in parallel, which is beneficial to increasing the impedance value of the base input end of the transistor, effectively reducing the difficulty of interstage matching, and completing impedance transformation. Moreover, for the first inter-stage matching network 30, the transformer is used for realizing that a single-end signal is changed into two paths of differential signals which are respectively input into the two transistors Q2 of the second-stage two-path amplifying circuit 40, so that the inter-stage matching difficulty can be effectively reduced, and the second transistor Q2 does not need to be connected with a base resistor in series, so that the linearity of the gain, the output power and the output power of the second transistor Q2 is greatly improved.
As shown in fig. 1, in the embodiment of the present invention, the first-stage single-circuit amplifier circuit 20 uses the first transistor Q1 to implement a single-circuit amplifier circuit, in other embodiments, the number of the first transistors Q1 is not limited to one, the first-stage single-circuit amplifier circuit 20 may be implemented using a plurality of parallel first transistors Q1, the plurality of first transistors Q1 are implemented in a parallel manner that bases of the plurality of first transistors Q1 are connected in series with a second resistor R2, and then connected in parallel, collectors of the first transistors Q1 are connected in parallel to serve as an output terminal of the first-stage single-circuit amplifier circuit 20, and emitters of the first transistors Q1 are all grounded. Similarly, in the embodiment shown in fig. 1, the second-stage dual-path amplifying circuit 40 is implemented by two second transistors Q2, respectively, in other real-time manners, each of the amplifying circuits of the second-stage dual-path amplifying circuit 40 may be implemented by a plurality of second transistors Q2 connected in parallel, bases of the plurality of second transistors Q2 connected in parallel in each of the amplifying circuits are connected in parallel, collectors of the plurality of second transistors Q2 connected in parallel are connected in parallel, and emitters of the plurality of second transistors Q2 are grounded. In addition, in the embodiment shown in fig. 1, the third-stage four-way amplifying circuit 60 adopts four third transistors Q3 to respectively implement four-way amplifying circuits, and in other real-time modes, each of the amplifying circuits of the third-stage four-way amplifying circuit 60 can be implemented by a plurality of third transistors Q3 connected in parallel, wherein the bases of the plurality of third transistors Q3 connected in parallel in each of the four ways are connected in parallel, the collectors of the plurality of third transistors Q3 are connected in parallel, and the emitters of the plurality of third transistors Q3 are all grounded. The amplification is realized by connecting a plurality of transistors in parallel, so that the performance of the amplifying circuit can be improved.
It is to be understood that the amplifying circuit according to the embodiment of the present invention is not limited to be implemented by using HBT transistors, but may be implemented by using cmos transistors, or may be implemented by a combination of transistors as long as power amplification is implemented.
With continued reference to fig. 1, in an embodiment of the present invention, the rf power amplifier 100 further includes a negative feedback network 80 connected between the base and the collector of the first transistor Q1. The negative feedback network 80 includes a first resistor R1 and a first capacitor C1 connected in series. The rf power amplifier 100 further includes a second resistor R2, the second resistor R2 is connected in series between the input matching network 10 and the base of the first transistor Q1, and is connected in parallel with the negative feedback network 80.
The stability of the first stage amplifier circuit 20 can be further improved and the input return loss can be optimized by the action of the second resistor R2. By adding the negative feedback network 80 between the collector and the base of the first transistor Q1, the first resistor R1 in the negative feedback network 80 can adjust the feedback depth, so as to increase the stability and reduce the gain and the output power of the first stage amplifier circuit 20.
In the embodiment of the present invention, the input matching network 10 is implemented by two-stage LC matching, as shown in fig. 1, the input matching network 10 includes inductors L1 and L2, capacitors C2 and C3, one end of the capacitor C2 is connected in parallel with one end of the inductor L1 and is used for inputting a single-ended radio frequency input signal RFin, the other end of the capacitor C2 is connected with one end of the capacitor C3, the other end of the capacitor C3 is connected with the base of the first transistor Q1, the other end of the inductor L1 is grounded, one end of the inductor L2 is connected between the capacitors C2 and C3, and the other end of the inductor L2 is grounded. The input matching is realized by adopting two-stage LC matching, which is beneficial to optimizing the input return loss of the whole circuit.
The first inter-stage matching network 30 further includes filter capacitors C4 and C5, two blocking capacitors C6, and a choke inductor L3, where the filter capacitors C4 and C5 have the same capacitance, one ends of the filter capacitors C4 and C5 are respectively connected to two input ends of the first transformer T1, the other ends of the filter capacitors C4 and C5 are respectively grounded, and the two blocking capacitors C6 are respectively connected in series between two output ends of the first transformer T1 and a base of the second transistor Q2 connected correspondingly. The choke inductor L3 is connected in series between the power signal Vcc1 and the input terminal of the first transformer T1 connected to the power signal Vcc 1.
The second inter-stage matching network 50 further comprises two filter capacitors C7 and four dc blocking capacitors C8, wherein one filter capacitor C7 is connected in series between the collector of one second transistor Q2 and the input of the second transformer T2 connected thereto, another filter capacitor C7 is connected in series between the collector of another second transistor Q2 and the input of another second transistor Q2 connected thereto, and one of said dc blocking capacitors C8 is connected in series between each output of each second transformer T2 and the base of the third transistor Q3 connected thereto.
In addition, the output matching network 70 further includes four first filter capacitors C9, two second filter capacitors C10 and two inductors L4, one end of each of the four first filter capacitors C9 is connected to the collectors of the four third transistors Q3 in a one-to-one correspondence, the other ends of the four first filter capacitors C9 are respectively grounded, one ends of the two second filter capacitors C10 are respectively connected to two input ends of the fourth transformer T4, the other ends of the two second filter capacitors C10 are respectively grounded, and the inductor L4 is connected in series between the input end of the fourth transformer T4 and the output end of the correspondingly connected third transformer T3.
In an embodiment of the present invention, the first transformer T1 and the second transformer T2 are symmetric transformers, the third transformer T3 and the fourth transformer T4 are stacked step-up transformers, and the turn ratios of the primary coil and the secondary coil of the symmetric transformers and the stacked step-up transformers are both equal to each other
In the meantime.
Referring to fig. 3, the symmetrical transformer of the embodiment of the present invention has an axisymmetric structure, and the grounding point is on the symmetric axis, so that sufficient phase accuracy can be ensured during phase conversion of the output signal, and great advantage can be obtained in transmitting differential signals. In addition, the symmetrical mutual-winding transformer has larger mutual inductance, so the coupling coefficient K value is larger
The larger the K value is, the closer the transformer is to the ideal state, the wider the bandwidth and the smaller the insertion loss are. And the ports of the primary coil and the secondary coil of the transformer are arranged at two ends of the transformer, so that the transformer is very suitable for cascading front and rear circuits. For example, taking the second transformer T2 as an example, the E, F end of the transformer is respectively connected to the output end and the isolation end (i.e., the dc power supply end Vcc 2) of the second transistor Q2, the E, F end and the connection coil thereof are primary coils, the M, N end is connected to the input ends of the two paths of differential signals of the third-stage amplifying circuit, the M, N end and the connection coil thereof are secondary coils, and the turn ratio of the primary coil to the secondary coil is within the range
And
in the meantime.
As shown in fig. 4 to 5, the laminated step-up transformer according to the embodiment of the present invention includes a first metal layer a, a second metal layer B, and a third metal layer C, which are sequentially laminated, each metal layer has two connection ends, an insulating layer (not shown) is disposed between two adjacent metal layers, and the insulating layer has a through hole D. The first metal layer A and the third metal layer C are secondary coils, one end of the first metal layer A is connected with one end of the third metal layer C through the through hole D, and the second metal layer B is a primary coil. As shown in fig. 4, each metal layer is annular to define a middle region surrounded by the metal layers, the through hole D is located on the middle region, and one end of the first metal layer a and one end of the third metal layer C are bent and extended to the middle region to be connected through the through hole D of the middle region. Wherein the bent portion a1 at the end of the first metal layer a and the bent portion C1 at the end of the third metal layer C overlap in the stacking direction. FIG. 4 is a schematic diagram of the connection structure of two third transformers T3 and one fourth transformer T4 in the output matching network 70 "
”、“
"denotes the input terminal," GND "denotes ground, GND can keep the phase difference of two output signals as 180 °; under the coupling of the first and third metal layers A, C and the second metal layer B, signals are induced to combine the two signals into one signal, the signal combined by the two third transformers T3 is output and then enters the fourth transformer T4, the signals are combined again, and finally an RFout signal is output, thereby achieving the purpose of four-way combination.
In other embodiments, as shown in fig. 6 and 7, the projections of the bent portion a1 at one end of the first metal layer a and the bent portion C1 at one end of the third metal layer C in the stacking direction may be substantially on a straight line, and with the transformer having such a structure, as shown in fig. 8 to 10, fig. 8 is a phase simulation waveform diagram of the stacked step-up transformer shown in fig. 6, fig. 9 is an insertion loss and amplitude simulation waveform diagram of the stacked step-up transformer shown in fig. 6, wherein a curve S (3,1) represents an amplitude curve, S (3,2) represents an insertion loss curve, and fig. 10 is a standing wave simulation waveform diagram of the stacked step-up transformer shown in fig. 6.
The foregoing detailed description is directed to a transformer matching network-based radio frequency power amplifier provided in an embodiment of the present invention, and specific examples are applied in this description to explain the principles and implementations of the present invention, where the description of the foregoing embodiments is only used to help understand the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A radio frequency power amplifier based on a transformer matching network is characterized by comprising an input matching network, a first-stage single-path amplification circuit, a first inter-stage matching network, a second-stage double-path amplification circuit, a second inter-stage matching network, a third-stage four-path amplification circuit and an output matching network which are connected in sequence;
the first inter-stage matching network comprises a first transformer T1, the second inter-stage matching network comprises two second transformers T2, and the output matching network comprises two third transformers T3 and a fourth transformer T4;
after the single-ended radio frequency input signal RFin passes through the input matching network and the first-stage single-path amplifying circuit in sequence, the two differential signals are respectively output to two input ends of the second-stage two-way amplifying circuit through the first transformer T1, the two paths of differential signals are amplified by the second-stage two-path amplifying circuit and then respectively output to the two second transformers T2, the four differential signals are respectively output to four input ends of the third stage four-way amplifying circuit through the two second transformers T2, the four differential signals are amplified by the third stage four amplification circuit and then respectively output to the two third transformers T3, the two differential signals are converted into two differential signals by the third transformer T3 and are respectively output to two input ends of the fourth transformer T4, and the two differential signals are combined into one radio frequency output signal RFout by the fourth transformer T4 to be output.
2. The rf power amplifier of claim 1, wherein the four input terminals of the third stage four-way amplifying circuit are grouped into two, and two output terminals corresponding to two input terminals of each group are a group of output terminals;
two input ends of the first transformer T1 are respectively connected with the output end of the first-stage single-path amplifying circuit and a power signal Vcc1, and two output ends of the first transformer T1 are respectively connected with two input ends of the second-stage double-path amplifying circuit; the two second transformers T2 are respectively in one-to-one correspondence with the two output ends of the second-stage two-way amplifying circuit, one input end of each second transformer T2 is connected with the corresponding output end of the second-stage two-way amplifying circuit, the other input end of each second transformer T2 is connected with a power signal Vcc2, and the two output ends of each second transformer T2 are respectively connected with the two input ends of the same group of the third-stage four-way amplifying circuit; two input ends of each third transformer T3 are respectively connected to two output ends of the same group of the third stage four-way amplifying circuit, two output ends of each third transformer T3 are respectively connected to one input end and a ground end of the fourth transformer T4, one output end of the fourth transformer T4 is used for outputting the rf output signal RFout, and the other output end is grounded.
3. The RF power amplifier of claim 2, wherein the first stage single-pass amplifying circuit comprises a first transistor Q1, the second stage two-pass amplifying circuit comprises two second transistors Q2, the third stage four-pass amplifying circuit comprises four third transistors Q3, the bases and collectors of the first transistor Q1 correspond to the input and output of the first stage single-pass amplifying circuit, the bases of the two second transistors Q2 correspond to the two inputs of the second stage two-pass amplifying circuit, the collectors of the two second transistors Q2 correspond to the two outputs of the second stage two-pass amplifying circuit, the bases of the four third transistors Q3 correspond to the four inputs of the third stage four-pass amplifying circuit, and the collectors of the four third transistors Q3 correspond to the four outputs of the third stage four-pass amplifying circuit, the emitters of the first transistor Q1, the second transistor Q2, and the third transistor Q3 are all grounded.
4. The radio frequency power amplifier of claim 3, further comprising a negative feedback network connected between the base and collector of the first transistor Q1, the negative feedback network comprising a first resistor R1 and a first capacitor C1 connected in series;
the radio frequency power amplifier further comprises a second resistor R2, the second resistor R2 is connected in series between the input matching network and the base of the first transistor Q1 and in parallel with the negative feedback network.
5. The radio frequency power amplifier of claim 3, wherein the input matching network comprises an inductor
And a capacitor
One end of the capacitor C2 is connected in parallel with one end of the inductor L1 and is used for inputting a single-ended radio frequency input signal RFin, the other end of the capacitor C2 is connected to one end of a capacitor C3, the other end of the capacitor C3 is connected to the base of the first transistor Q1, the other end of the inductor L1 is grounded, one end of the inductor L2 is connected between the capacitors C2 and C3, and the other end of the inductor L2 is grounded.
6. The RF power amplifier of claim 1, wherein the first transformer T1 and the second transformer T2 are symmetrically wound transformers, the third transformer T3 and the fourth transformer T4 are stacked step-up transformers, and the turns ratios of the primary winding and the secondary winding of the symmetrically wound transformers and the stacked step-up transformers are both equal
In the meantime.
7. The RF power amplifier of claim 6, wherein the stacked boost transformer comprises a first metal layer, a second metal layer, a third metal layer and a fourth metal layer stacked in sequence, each metal layer has two connection ends, an insulating layer is disposed between two adjacent metal layers, the insulating layer has a through hole, the first metal layer and the third metal layer are secondary windings, one end of the first metal layer is connected to one end of the third metal layer through the through hole, and the second metal layer is a primary winding.
8. The rf power amplifier of claim 7, wherein each of the metal layers is annular to define a middle region surrounded by the metal layer, the via hole is located in the middle region, and one end of the first metal layer and one end of the third metal layer are bent to extend to the middle region to be connected by the via hole located in the middle region.
9. The RF power amplifier of claim 8, wherein the bent portion at one end of the first metal layer and the bent portion at one end of the third metal layer are overlapped in a stacking direction.
10. The RF power amplifier of claim 8, wherein the bent portion at one end of the first metal layer and the bent portion at one end of the third metal layer are projected on a straight line in the stacking direction.
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| CN202111088952.XA CN113556092B (en) | 2021-09-16 | 2021-09-16 | Radio frequency power amplifier based on transformer matching network |
| PCT/CN2022/078358 WO2023040201A1 (en) | 2021-09-16 | 2022-02-28 | Radio-frequency power amplifier based on transformer matching network |
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| CN202111088952.XA CN113556092B (en) | 2021-09-16 | 2021-09-16 | Radio frequency power amplifier based on transformer matching network |
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| CN114726325A (en) * | 2022-03-10 | 2022-07-08 | 北京巨束科技有限公司 | Stacking power amplifier, circuit board and electronic equipment |
| CN115765634A (en) * | 2022-11-18 | 2023-03-07 | 北京无线电测量研究所 | Power amplifying circuit |
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| WO2023040201A1 (en) | 2023-03-23 |
| CN113556092B (en) | 2021-12-31 |
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