CN109951165A - A kind of S-band signal power amplifying circuit - Google Patents
A kind of S-band signal power amplifying circuit Download PDFInfo
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- CN109951165A CN109951165A CN201910226029.4A CN201910226029A CN109951165A CN 109951165 A CN109951165 A CN 109951165A CN 201910226029 A CN201910226029 A CN 201910226029A CN 109951165 A CN109951165 A CN 109951165A
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Abstract
The present invention provides a kind of S-band signal power amplifying circuits, including several grades of amplification modules, output module and power module；It is characterized by: final stage amplification module includes 90 degree of power dividers, 90 degree of power combiners and two intermediate circuits；Each intermediate circuit includes that balun recommends unit, field-effect tube Q1, field-effect tube Q2 and balun and recommends synthesis unit；The input terminal that balun recommends unit is connect with 90 degree of power dividers, the output end that balun recommends unit is connect with field-effect tube Q1 and field-effect tube Q2 respectively, the input terminal that field-effect tube Q1 and field-effect tube Q2 also recommends synthesis unit with balun respectively is connect, and the output end that balun recommends synthesis unit is connect with 90 degree of power combiners.The circuit power fan-out capability is strong, and combined coefficient is high, and workload-adaptability is good, simplifies circuit, is conducive to reduce product overall volume, can optimize harmonic wave, have good reliability and stability.
Description
Technical field
The present invention relates to power amplifier technology fields, more specifically to a kind of S-band signal power amplifying circuit.
Background technique
The frequency range of S-band signal in 2~4GHz, be mainly used in relaying, satellite communication, radar, bluetooth,
The fields such as ZIGBEE, wireless routing, wireless mouse.Since the frequency of S-band model is high, the power for being accordingly used in low frequency signal is put
Big device can not be applied directly in the amplification of S-band signal power.
Currently, S-band signal power amplifier carries out power amplification frequently with single field-effect tube, due to single field-effect
The power output capacity of pipe is limited, therefore the output power of amplifying circuit entirety is lower, is not able to satisfy high-power output product
It is required that；Part S-band signal power amplifier is synthesized to realize power amplification using multiple field-effect tube, but routine is closed
Complicated at mode circuit, component is more, is unfavorable for the diminution of product overall volume.
Summary of the invention
To overcome shortcoming and deficiency of the prior art, the purpose of the present invention is to provide a kind of power output capacities by force,
Combined coefficient is high, workload-adaptability is good, simplifies circuit, is conducive to reduce product overall volume, can optimize harmonic wave, with good
The S-band signal power amplifying circuit of reliability and stability.
In order to achieve the above object, the technical scheme is that: a kind of amplification of S-band signal power
Circuit, including several grades of amplification modules, output module and power module；Power module is electrically connected with amplification modules at different levels respectively；
Final stage amplification module is connect with output module；It is characterized by: the final stage amplification module includes 90 degree of power dividers, 90 degree
Power combiner and two intermediate circuits；Each intermediate circuit includes that balun recommends unit, field-effect tube Q1, field-effect tube Q2
Synthesis unit is recommended with balun；The input terminal that the balun recommends unit is connect with 90 degree of power dividers, and balun recommends unit
Output end connect respectively with field-effect tube Q1 and field-effect tube Q2, field-effect tube Q1 and field-effect tube Q2 are also pushed away with balun respectively
The input terminal connection of synthesis unit is drawn, the output end that balun recommends synthesis unit is connect with 90 degree of power combiners.
Circuit of the present invention amplifies suitable for S-band signal power, and the final stage amplification module of circuit of the present invention uses 90 degree of function
Rate distribution, balun recommend, the synthesis of four field-effect tube, balun recommend synthesis, the mode of 90 degree of power combings.Multitube synthesis mode
Power output capacity it is bigger than single tube power fan-out capability, therefore can hoisting power output using four field-effect tube synthesis modes
Ability.Synthesis is recommended using balun, high-efficient, synthesis is simple, can simplify circuit, reduces product overall volume；Can also it optimize humorous
Wave improves Electro Magnetic Compatibility；With high reliablity, stability is good, and combined coefficient is high, and isolation is high, and workload-adaptability is good etc.
Advantage.
Preferably, it includes input balun, capacitor C3, capacitor C7, capacitor C10, capacitor C12, electricity that the balun, which recommends unit,
Hold C14, inductance L3 and inductance L4；
The input terminal of input balun is connect with 90 degree of power dividers；The output end one of input balun passes through sequentially connected
Capacitor C10 and inductance L3 are connect with the grid of field-effect tube Q1；The output end two for inputting balun passes through sequentially connected capacitor C14
It is connect with inductance L4 with the grid of field-effect tube Q2；Capacitor C12 is connected to the grid of field-effect tube Q1 and the grid of field-effect tube Q2
Between pole；The grid of field-effect tube Q1 and the cathode of power module connect, and the grid of field-effect tube Q1 is grounded by capacitor C7；?
The grid of effect pipe Q2 and the cathode of power module connect, and the grid of field-effect tube Q2 is grounded by capacitor C3；
It includes output balun, capacitor C1, capacitor C5, capacitor C9, capacitor C11, capacitor that the balun, which recommends synthesis unit,
C13, inductance L1 and inductance L2；
The source electrode of field-effect tube Q1 and the source electrode of field-effect tube Q2 are grounded respectively；The drain electrode of field-effect tube Q1 passes through capacitor
C11 is connect with the drain electrode of field-effect tube Q2；The both ends of capacitor C11 also pass through capacitor C9 and capacitor C13 and output balun respectively
Input terminal connection；The drain electrode of field-effect tube Q1 is grounded by sequentially connected inductance L2 and capacitor C5, and inductance L2 and capacitor C5 connect
The anode for meeting place and power module connects；The drain electrode of field-effect tube Q2 is grounded by sequentially connected inductance L1 and capacitor C1, electricity
Sense L1 is connect with the anode of the junction capacitor C1 and power module；The output end of output balun is connect with 90 degree of power combiners.
The circuit of the setting can realize that four field-effect tube recommend synthesis mode using balun and carry out signal synthesis amplification, tool
There is high reliablity, the advantages that stability is good, and combined coefficient is high, and isolation is high, and workload-adaptability is good.
Preferably, the cathode of the grid of the field-effect tube Q1 and power module connects, and the grid of field-effect tube Q1 passes through
Capacitor C7 ground connection, refers to: the grid of field-effect tube Q1 passes through the cathode of sequentially connected resistance R4 and resistance R3 and power module
Connection, resistance R3 are grounded with the junction resistance R4 by capacitor C7.
Preferably, the cathode of the grid of the field-effect tube Q2 and power module connects, and the grid of field-effect tube Q2 passes through
Capacitor C3 ground connection, refers to: the grid of field-effect tube Q2 passes through the cathode of sequentially connected resistance R2 and resistance R1 and power module
Connection, resistance R1 are grounded with the junction resistance R2 by capacitor C3.
Preferably, the field-effect tube Q1 and field-effect tube Q2 each mean gallium nitride FET.Gallium nitride FET
With high-efficient, the good advantage of broadband character；It applies in S-band high-frequency signal power amplification, has power amplification circuit
There are high efficiency, High Linear, high stability, high reliability.
Preferably, the power module includes sequentially connected switching tube Q7, field-effect tube Q6, timing unit, partial pressure list
Member and comparator LM1；Timing unit includes timing chip LTC1；Wherein, the anode of switching tube Q7 and power module connects, and compares
The connection of the cathode of device LM1 and power module.Gallium nitride FET in use, must first be gallium nitride FET grid
Negative pressure is provided, positive pressure could be supplied to the drain electrode of gallium nitride FET later；The power module can control power module respectively
Anode and cathode setting the moment power supply, meet the use demand of gallium nitride FET.
Compared with prior art, the invention has the advantages that with the utility model has the advantages that
1, circuit power fan-out capability of the present invention is strong, and combined coefficient is high, and workload-adaptability can be improved；Synthesis is simple, can letter
Change circuit, is conducive to reduce product overall volume；Harmonic wave can also be optimized, improve Electro Magnetic Compatibility；With good reliability
And stability；
2, circuit of the present invention carries out signal synthesis amplification using four gallium nitride FETs；Gallium nitride FET has
It is high-efficient, the good advantage of broadband character；It applies in S-band high-frequency signal power amplification, makes power amplification circuit that there is height
The advantages that efficiency, High Linear, high stability, high reliability.
Detailed description of the invention
Fig. 1 is the functional block diagram of circuit of the present invention；
Fig. 2 is the functional block diagram of final stage amplification module in circuit of the present invention；
Fig. 3 is the circuit diagram of final stage amplification module in circuit of the present invention；
Fig. 4 is the circuit diagram of power module in circuit of the present invention.
Specific embodiment
The present invention is described in further detail with specific embodiment with reference to the accompanying drawing.
Embodiment
As shown in Figures 1 to 4, a kind of S-band signal power amplifying circuit of the present embodiment, including several grades of amplification modules,
Output module and power module.In the present embodiment, the quantity of amplification module is three-level, including prime amplification module, intergrade are put
Big module and final stage amplification module；In practical application, the quantity of amplification module is also possible to two, four, five, six grades etc.；Final stage is put
Big module refers to the amplification module positioned at end.Power module is electrically connected with amplification modules at different levels respectively；Final stage amplification module with
Output module connection.Existing module can be used in prime amplification module and intergrade amplification module.
Final stage amplification module includes 90 degree of power dividers, 90 degree of power combiners and two intermediate circuits；Each centre
Circuit includes that balun recommends unit, field-effect tube Q1, field-effect tube Q2 and balun and recommends synthesis unit；The balun recommends list
The input terminal of member is connect with 90 degree of power dividers, balun recommend the output end of unit respectively with field-effect tube Q1 and field-effect tube
The input terminal that Q2 connection, field-effect tube Q1 and field-effect tube Q2 also recommend synthesis unit with balun respectively is connect, and balun recommends conjunction
It is connect at the output end of unit with 90 degree of power combiners.
Field-effect tube Q1 and field-effect tube Q2 each mean gallium nitride FET.Balun recommend unit include input balun,
Capacitor C3, capacitor C7, capacitor C10, capacitor C12, capacitor C14, inductance L3 and inductance L4.
The input terminal of input balun is connect with 90 degree of power dividers；The output end one of input balun passes through sequentially connected
Capacitor C10 and inductance L3 are connect with the grid of field-effect tube Q1；The output end two for inputting balun passes through sequentially connected capacitor C14
It is connect with inductance L4 with the grid of field-effect tube Q2；Capacitor C12 is connected to the grid of field-effect tube Q1 and the grid of field-effect tube Q2
Between pole；The grid of field-effect tube Q1 is connected by the cathode of sequentially connected resistance R4 and resistance R3 and power module, resistance
R3 is grounded with the junction resistance R4 by capacitor C7；The grid of field-effect tube Q2 by sequentially connected resistance R2 and resistance R1 with
The cathode of power module connects, and resistance R1 is grounded with the junction resistance R2 by capacitor C3.
It includes output balun, capacitor C1, capacitor C5, capacitor C9, capacitor C11, capacitor C13, electricity that balun, which recommends synthesis unit,
Feel L1 and inductance L2.
The source electrode of field-effect tube Q1 and the source electrode of field-effect tube Q2 are grounded respectively；The drain electrode of field-effect tube Q1 passes through capacitor
C11 is connect with the drain electrode of field-effect tube Q2；The both ends of capacitor C11 also pass through capacitor C9 and capacitor C13 and output balun respectively
Input terminal connection；The drain electrode of field-effect tube Q1 is grounded by sequentially connected inductance L2 and capacitor C5, and inductance L2 and capacitor C5 connect
The anode for meeting place and power module connects；The drain electrode of field-effect tube Q2 is grounded by sequentially connected inductance L1 and capacitor C1, electricity
Sense L1 is connect with the anode of the junction capacitor C1 and power module；The output end of output balun is connect with 90 degree of power combiners.
Circuit of the present invention amplifies suitable for S-band signal power, and the final stage amplification module of circuit of the present invention uses 90 degree of function
Rate distribution, balun recommend, the synthesis of four field-effect tube, balun recommend synthesis, the mode of 90 degree of power combings.Multitube synthesis mode
Power output capacity it is bigger than single tube power fan-out capability, therefore can hoisting power output using four field-effect tube synthesis modes
Ability.Synthesis is recommended using balun, high-efficient, synthesis is simple, can simplify circuit, reduces product overall volume；Can also it optimize humorous
Wave improves Electro Magnetic Compatibility；With high reliablity, stability is good, and combined coefficient is high, and isolation is high, and workload-adaptability is good etc.
Advantage.
Power module includes sequentially connected switching tube Q7, field-effect tube Q6, timing unit, partial pressure unit and comparator
LM1；Timing unit includes timing chip LTC1；Wherein, the anode of switching tube Q7 and power module connects, comparator LM1 and electricity
The cathode of source module connects.Existing timing chip, such as the chip of model LTC1261CS can be used in timing chip LTC1.
Gallium nitride FET in use, negative pressure first must be provided for the grid of gallium nitride FET, later could
By the drain electrode of positive pressure supply gallium nitride FET；The power module can control the anode of power module respectively and cathode is being set
Moment power supply, meets the use demand of gallium nitride FET.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (6)
1. a kind of S-band signal power amplifying circuit, including several grades of amplification modules, output module and power module；Power supply mould
Block is electrically connected with amplification modules at different levels respectively；Final stage amplification module is connect with output module；It is characterized by: the final stage amplification
Module includes 90 degree of power dividers, 90 degree of power combiners and two intermediate circuits；Each intermediate circuit is pushed away including balun
It draws unit, field-effect tube Q1, field-effect tube Q2 and balun and recommends synthesis unit；The balun recommend unit input terminal and 90 degree
Power divider connection, the output end that balun recommends unit are connect with field-effect tube Q1 and field-effect tube Q2 respectively, field-effect tube
The input terminal that Q1 and field-effect tube Q2 also recommends synthesis unit with balun respectively is connect, balun recommend the output end of synthesis unit with
90 degree of power combiner connections.
2. S-band signal power amplifying circuit according to claim 1, it is characterised in that: the balun recommends unit packet
Include input balun, capacitor C3, capacitor C7, capacitor C10, capacitor C12, capacitor C14, inductance L3 and inductance L4；
The input terminal of input balun is connect with 90 degree of power dividers；The output end one for inputting balun passes through sequentially connected capacitor
C10 and inductance L3 are connect with the grid of field-effect tube Q1；The output end two for inputting balun passes through sequentially connected capacitor C14 and electricity
Sense L4 is connect with the grid of field-effect tube Q2；Capacitor C12 be connected to field-effect tube Q1 grid and field-effect tube Q2 grid it
Between；The grid of field-effect tube Q1 and the cathode of power module connect, and the grid of field-effect tube Q1 is grounded by capacitor C7；Field-effect
The grid of pipe Q2 and the cathode of power module connect, and the grid of field-effect tube Q2 is grounded by capacitor C3；
It includes output balun, capacitor C1, capacitor C5, capacitor C9, capacitor C11, capacitor C13, electricity that the balun, which recommends synthesis unit,
Feel L1 and inductance L2；
The source electrode of field-effect tube Q1 and the source electrode of field-effect tube Q2 are grounded respectively；The drain electrode of field-effect tube Q1 by capacitor C11 with
The drain electrode of field-effect tube Q2 connects；The both ends of capacitor C11 also pass through the input terminal of capacitor C9 and capacitor C13 and output balun respectively
Connection；The drain electrode of field-effect tube Q1 is grounded by sequentially connected inductance L2 and capacitor C5, inductance L2 and the junction capacitor C5 with
The anode connection of power module；The drain electrode of field-effect tube Q2 is grounded by sequentially connected inductance L1 and capacitor C1, inductance L1 with
The anode of the junction capacitor C1 and power module connects；The output end of output balun is connect with 90 degree of power combiners.
3. S-band signal power amplifying circuit according to claim 2, it is characterised in that: the grid of the field-effect tube Q1
The connection of the cathode of pole and power module, the grid of field-effect tube Q1 are grounded by capacitor C7, are referred to: the grid of field-effect tube Q1 is logical
The cathode for crossing sequentially connected resistance R4 and resistance R3 and power module connects, and resistance R3 and the junction resistance R4 pass through capacitor C7
Ground connection.
4. S-band signal power amplifying circuit according to claim 2, it is characterised in that: the grid of the field-effect tube Q2
The connection of the cathode of pole and power module, the grid of field-effect tube Q2 are grounded by capacitor C3, are referred to: the grid of field-effect tube Q2 is logical
The cathode for crossing sequentially connected resistance R2 and resistance R1 and power module connects, and resistance R1 and the junction resistance R2 pass through capacitor C3
Ground connection.
5. S-band signal power amplifying circuit according to claim 1, it is characterised in that: the field-effect tube Q1 and field
Effect pipe Q2 each means gallium nitride FET.
6. S-band signal power amplifying circuit according to claim 5, it is characterised in that: the power module include according to
Switching tube Q7, field-effect tube Q6, timing unit, partial pressure unit and the comparator LM1 of secondary connection；Timing unit includes timing chip
LTC1；Wherein, the anode of switching tube Q7 and power module connects, and the cathode of comparator LM1 and power module connects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910226029.4A CN109951165A (en) | 2019-03-25 | 2019-03-25 | A kind of S-band signal power amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910226029.4A CN109951165A (en) | 2019-03-25 | 2019-03-25 | A kind of S-band signal power amplifying circuit |
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| Publication Number | Publication Date |
|---|---|
| CN109951165A true CN109951165A (en) | 2019-06-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910226029.4A Withdrawn CN109951165A (en) | 2019-03-25 | 2019-03-25 | A kind of S-band signal power amplifying circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113285684A (en) * | 2021-06-02 | 2021-08-20 | 锐石创芯（深圳）科技有限公司 | Push-pull power amplification system and radio frequency front end module |
| CN113556092A (en) * | 2021-09-16 | 2021-10-26 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier based on transformer matching network |
| WO2022166652A1 (en) * | 2021-02-08 | 2022-08-11 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
| WO2023005458A1 (en) * | 2021-07-30 | 2023-02-02 | 锐石创芯(深圳)科技股份有限公司 | Doherty power amplifier and radio-frequency front-end module |
| CN115913142A (en) * | 2021-09-30 | 2023-04-04 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency push-pull power amplifier chip and radio frequency front end module |
-
2019
- 2019-03-25 CN CN201910226029.4A patent/CN109951165A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022166652A1 (en) * | 2021-02-08 | 2022-08-11 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
| CN113285684A (en) * | 2021-06-02 | 2021-08-20 | 锐石创芯（深圳）科技有限公司 | Push-pull power amplification system and radio frequency front end module |
| WO2022253161A1 (en) * | 2021-06-02 | 2022-12-08 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
| WO2023005458A1 (en) * | 2021-07-30 | 2023-02-02 | 锐石创芯(深圳)科技股份有限公司 | Doherty power amplifier and radio-frequency front-end module |
| CN113556092A (en) * | 2021-09-16 | 2021-10-26 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier based on transformer matching network |
| CN113556092B (en) * | 2021-09-16 | 2021-12-31 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier based on transformer matching network |
| CN115913142A (en) * | 2021-09-30 | 2023-04-04 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency push-pull power amplifier chip and radio frequency front end module |
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Application publication date: 20190628 |
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