CN210693863U - High-efficiency power amplifier based on enhancement transistor - Google Patents
High-efficiency power amplifier based on enhancement transistor Download PDFInfo
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- CN210693863U CN210693863U CN201921271933.9U CN201921271933U CN210693863U CN 210693863 U CN210693863 U CN 210693863U CN 201921271933 U CN201921271933 U CN 201921271933U CN 210693863 U CN210693863 U CN 210693863U
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Abstract
The utility model discloses a high-efficiency power amplifier based on an enhancement transistor, which comprises an input four-way voltage transformation coupling power distribution network, a first field effect transistor Darlington three-stack power amplification network, a second field effect transistor Darlington three-stack power amplification network, a third field effect transistor Darlington three-stack power amplification network, a fourth field effect transistor Darlington three-stack power amplification network and an output four-way voltage transformation coupling power synthesis network, wherein the core framework of the utility model adopts the high-power and high-gain characteristics of the effect transistor Darlington three-stack power amplification network in a microwave section, meanwhile, by utilizing the good parasitic parameter inhibition of the differential amplifier in the microwave frequency band and combining with the good power synthesis characteristic of the distributed transformer network, so that the whole power amplifier obtains good high gain, high efficiency and high power output capability.
Description
Technical Field
The utility model relates to a field effect transistor radio frequency power amplifier and integrated circuit field, especially to the high efficiency power amplifier based on enhancement mode transistor that terminal emission module of radio frequency microwave transceiver used.
Background
With the rapid development of wireless communication systems and rf microwave circuits, rf front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the rf and microwave power amplifiers of the transmitter are urgently required to have high output power, high gain, high efficiency, low cost and other performances in the market, and the integrated circuit is a key technology expected to meet the market demand.
However, when the integrated circuit process design is adopted to realize the chip circuit of the radio frequency and microwave power amplifier, the performance and the cost are limited to a certain extent, and the method mainly comprises the following steps:
(1) high power, high efficiency capability is limited: the traditional power amplifier adopts a multi-path parallel synthesis structure or a distributed structure, the synthesis efficiency of the two structures is limited, a part of power is lost in a synthesis network, and the high-power and high-efficiency capability is limited.
(2) Low power consumption, high gain amplification capability is limited: the power amplifier of the traditional single-ended common-source transistor is influenced by parasitic parameters of the transistor, has lower gain when working at high frequency, is greatly limited in power capability, and has higher difficulty in realizing low power consumption.
The circuit structures of common high-gain and high-power amplifiers are many, most typically, a multi-stage and multi-path synthesis single-ended power amplifier, but it is very difficult for a conventional multi-stage and multi-path synthesis single-ended power amplifier to simultaneously meet the requirements of various parameters, mainly because:
① the output impedance of the traditional multi-stage, multi-path synthesis single-ended power amplifier is low when it adopts multi-path parallel synthesis structure, therefore the output synthesis network needs to realize the impedance matching of high impedance transformation ratio, which often needs to sacrifice the gain of the amplifier and reduce the power, thus limiting the high power and high efficiency capability.
② in the traditional amplifier based on the active transformer synthesis network, the amplifier unit usually adopts a single-stage common-source amplifier or a Cascode amplifier, but the gains of the two amplifiers are relatively limited, and the output power is relatively limited by a single tube.
Therefore, the design difficulty of the high-gain and high-power amplifier based on the integrated circuit process is as follows: high power and high efficiency output difficulty is large; the traditional single transistor structure or the multiplex synthesis structure of Cascode transistors has many limitations in amplifiers based on active transformer synthesis networks. In addition, the use of depletion mode fets often requires additional supply voltage, which also increases the complexity of the circuit.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a high efficiency power amplifier based on enhancement mode transistor is provided, has combined the advantage of doublestage feedback amplification technique, differential amplifier technique, distributed transformer synthesis technique, has at microwave frequency channel high power, high-gain and advantage such as with low costs. Meanwhile, the enhancement-mode field effect transistor is adopted, so that a complex power supply circuit of a depletion-mode transistor is avoided.
The utility model provides an above-mentioned technical problem's technical scheme as follows: a high-efficiency power amplifier based on an enhancement transistor comprises an input four-path voltage transformation coupling power distribution network, a first field effect transistor Darlington three-stack power amplification network, a second field effect transistor Darlington three-stack power amplification network, a third field effect transistor Darlington three-stack power amplification network, a fourth field effect transistor Darlington three-stack power amplification network and an output four-path voltage transformation coupling power synthesis network;
the input end of the four-path voltage transformation coupling power distribution network is the input end of the whole power amplifier, the first output end of the four-path voltage transformation coupling power distribution network is connected with the input end of the first field effect transistor Darlington three-stack power amplification network, the second output end of the four-path voltage transformation coupling power distribution network is connected with the input end of the second field effect transistor Darlington three-stack power amplification network, the third output end of the four-path voltage transformation coupling power distribution network is connected with the input end of the third field effect transistor Darlington three-stack power amplification network, the third output end of the four-path voltage transformation coupling power distribution network is connected with the input end of the;
the output end of the first field effect transistor Darlington three-stack power amplification network is connected with the first input end of the output four-path voltage transformation coupling power synthesis network; the output end of the second field effect transistor Darlington three-stack power amplification network is connected with the second input end of the output four-path voltage transformation coupling power synthesis network; the output end of the third field effect transistor Darlington three-stack power amplification network is connected with the third input end of the output four-path voltage transformation coupling power synthesis network; the output end of the fourth field effect transistor Darlington three-stack power amplification network is connected with the fourth input end of the output four-path voltage transformation coupling power synthesis network;
and the output end of the output four-path voltage transformation coupling power synthesis network is the output end of the whole power amplifier.
Furthermore, the input end of the input four-way voltage transformation coupling power distribution network is connected with an inductor L1Inductance L1Another end of the inductor L is connected with the inductor L2And a ground capacitor C1Inductance L2The other end of the transformer is connected with a coupling transformer T1Dotted terminal of primary winding, transformer T1The non-homonymous end of the primary coil of (1) is grounded; transformer T1The same-name end of the first secondary coil is connected with the first output end of the four-path voltage transformation coupling power distribution network, and the transformer T1The non-homonymous terminal of the first secondary coil is input into the second output terminal of the four-path voltage transformation coupling power distribution network, and the transformer T1For the second timeThe homonymous end of the stage coil is connected with the third output end of the four-path voltage transformation coupling power distribution network, and the transformer T1The non-homonymous end of the second secondary coil is connected with a fourth output end of the four-path input voltage transformation coupling power distribution network; connecting transformer T1The center taps of the first and second secondary coils of (1) are grounded.
The beneficial effects of the further scheme are as follows: the utility model discloses an input four ways variable voltage coupling power distribution network except can realizing the power distribution of input radio frequency signal, can also carry out impedance match and phase adjustment to radio frequency input signal, realize single-ended signal to differential signal's conversion simultaneously, guarantee differential signal's phase difference.
Furthermore, the input ends of the first field effect transistor Darlington three-stack power amplification network, the second field effect transistor Darlington three-stack power amplification network, the third field effect transistor Darlington three-stack power amplification network and the fourth field effect transistor Darlington three-stack power amplification network are connected with a capacitor CdjCapacitor CdjIs connected with the field effect transistor M at the other enddjGate electrode of (1), resistor RgjAnd a ground resistance RdjResistance RgjIs connected with the field effect transistor M at the other enddjA drain electrode of (1); field effect transistor MdjIs connected with a grounding resistor RojAnd a capacitor CojCapacitor Co1Is connected with a capacitor R at the other endsjEarth resistance RqjAnd a field effect transistor MrjOf a field effect transistor MrjThe source of (2) is grounded; resistance RsjThe other end of the capacitor is connected with a grounding capacitor CojResistance RtjAnd a field effect transistor MsjOf a field effect transistor MsjSource connected field effect transistor MrjA drain electrode of (1); resistance RtjThe other end of the capacitor is connected with a grounding capacitor CtjResistance RpjAnd a field effect transistor MtjOf a field effect transistor MtjSource connected field effect transistor MsjA drain electrode of (1); resistance RpjThe other end is connected with a field effect transistor MtjDrain electrode of (1), inductor LejAnd a first field effect transistor Darlington three-stacking workThe output ends of the power amplification network, the second field effect transistor Darlington three-stack power amplification network, the third field effect transistor Darlington three-stack power amplification network and the fourth field effect transistor Darlington three-stack power amplification network, and the inductor LejThe other end of the first and second electrodes is also connected with a field effect transistor MdjWherein j is 1, 2, 3, and 4. .
The beneficial effects of the further scheme are as follows: the utility model discloses first field effect transistor darlington three pile up power amplification network, second field effect transistor darlington three pile up power amplification network, third field effect transistor darlington three pile up power amplification network, the core circuit that adopts in the fourth field effect transistor darlington three pile up power amplification network is based on enhancement mode field effect transistor's three pile up darlington pipe, can show the gain and the power capacity of lift-up amplifier, circuit structure compares that the multichannel synthetic structure is simpler simultaneously.
Furthermore, the output four-path voltage transformation coupling power synthesis network comprises a transformer T2Transformer T2The non-dotted terminal of the first secondary winding of (1) and the transformer T2The end of the same name of the second secondary coil passes through a capacitor Cout1Connection, transformer T2The dotted terminal of the first secondary winding and the transformer T2The non-homonymous terminal of the second secondary coil passes through a capacitor Cout2Connection, transformer T2Is connected with the inductor L at the middle tap point of the first secondary coild1Inductance Ld1The other end of the capacitor is connected with a grounding capacitor Cd1And a bias voltage Vd(ii) a Transformer T2The center tap point of the second secondary winding is connected with an inductor Ld2Inductance Ld2The other end of the capacitor is connected with a grounding capacitor Cd2And a bias voltage Vd(ii) a Transformer T2The non-dotted terminal of the primary coil of (A) is grounded, and a transformer T2The dotted terminal of the primary coil is connected with the output terminal of the output four-path voltage transformation coupling power synthesis network, and the transformer T2The homonymous end and the non-homonymous end of the first secondary coil are respectively connected with the first input end and the second input end of the output four-path voltage transformation coupling power synthesis network, and the transformer T2The non-homonymous terminal and the homonymous terminal of the second secondary coil are respectively connectedAnd the third input end and the fourth input end of the output four-path voltage transformation coupling power synthesis network are connected.
The beneficial effects of the further scheme are as follows: the utility model discloses an output four ways power synthesis matching network except can realizing four ways difference radio frequency signal's power synthesis, can also convert four ways difference signal into single-ended signal, the insertion loss of introducing is less, has ensured simultaneously the output and the efficiency of amplifier.
Drawings
Fig. 1 is a schematic block diagram of a power amplifier of the present invention;
fig. 2 is a circuit diagram of the power amplifier of the present invention.
Detailed Description
Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It is to be understood that the embodiments shown and described in the drawings are merely exemplary and are intended to illustrate the principles and spirit of the invention, not to limit the scope of the invention.
The embodiment of the utility model provides a high efficiency power amplifier based on enhancement mode transistor, pile up power amplification network, second field effect transistor darlington three and pile up power amplification network, third field effect transistor darlington three and pile up power amplification network, fourth field effect transistor darlington three and pile up power amplification network and export four ways voltage transformation coupling power synthesis network including input four ways voltage transformation coupling power distribution network, first field effect transistor darlington.
As shown in fig. 1, an input end of the input four-way voltage transformation coupling power distribution network is an input end of the whole power amplifier, a first output end of the input four-way voltage transformation coupling power distribution network is connected with an input end of the first field effect transistor darlington three-stack power amplification network, a second output end of the input four-way voltage transformation coupling power distribution network is connected with an input end of the second field effect transistor darlington three-stack power amplification network, a third output end of the input four-way voltage transformation coupling power distribution network is connected with an;
the output end of the first field effect transistor Darlington three-stack power amplification network is connected with the first input end of the output four-path voltage transformation coupling power synthesis network; the output end of the second field effect transistor Darlington three-stack power amplification network is connected with the second input end of the output four-path voltage transformation coupling power synthesis network; the output end of the third field effect transistor Darlington three-stack power amplification network is connected with the third input end of the output four-path voltage transformation coupling power synthesis network; the output end of the fourth field effect transistor Darlington three-stack power amplification network is connected with the fourth input end of the output four-path voltage transformation coupling power synthesis network;
and the output end of the output four-path voltage transformation coupling power synthesis network is the output end of the whole power amplifier.
As shown in fig. 2, the input end of the input four-way transformer-coupled power distribution network is connected with an inductor L1Inductance L1Another end of the inductor L is connected with the inductor L2And a ground capacitor C1Inductance L2The other end of the transformer is connected with a coupling transformer T1Dotted terminal of primary winding, transformer T1The non-homonymous end of the primary coil of (1) is grounded; transformer T1The same-name end of the first secondary coil is connected with the first output end of the four-path voltage transformation coupling power distribution network, and the transformer T1The non-homonymous terminal of the first secondary coil is input into the second output terminal of the four-path voltage transformation coupling power distribution network, and the transformer T1The same-name end of the second secondary coil is connected with the third output end of the four-path voltage transformation coupling power distribution network, and the transformer T1The non-homonymous end of the second secondary coil is connected with a fourth output end of the four-path input voltage transformation coupling power distribution network. Connecting transformer T1The center taps of the first and second secondary coils of (1) are grounded.
The input ends of the first field effect transistor Darlington three-stack power amplification network, the second field effect transistor Darlington three-stack power amplification network, the third field effect transistor Darlington three-stack power amplification network and the fourth field effect transistor Darlington three-stack power amplification network are connected with a capacitor CdjCapacitor CdjIs connected with the field effect transistor M at the other enddjGate electrode of (1), resistor RgjAnd a ground resistance RdjResistance RgjIs connected with the field effect transistor M at the other enddjA drain electrode of (1); field effect transistor MdjIs connected with a grounding resistor RojAnd a capacitor CojCapacitor Co1Is connected with a capacitor R at the other endsjEarth resistance RqjAnd a field effect transistor MrjOf a field effect transistor MrjThe source of (2) is grounded; resistance RsjThe other end of the capacitor is connected with a grounding capacitor CojResistance RtjAnd a field effect transistor MsjOf a field effect transistor MsjSource connected field effect transistor MrjA drain electrode of (1); resistance RtjThe other end of the capacitor is connected with a grounding capacitor CtjResistance RpjAnd a field effect transistor MtjOf a field effect transistor MtjSource connected field effect transistor MsjA drain electrode of (1); resistance RpjThe other end is connected with a field effect transistor MtjDrain electrode of (1), inductor LejThe output ends of the first field effect transistor Darlington three-stack power amplification network, the second field effect transistor Darlington three-stack power amplification network, the third field effect transistor Darlington three-stack power amplification network and the fourth field effect transistor Darlington three-stack power amplification network, and the inductor LejThe other end of the first and second electrodes is also connected with a field effect transistor MdjWherein j is 1, 2, 3, and 4.
The output four-path voltage transformation coupling power synthesis network comprises a transformer T2Equal elements, transformer T2The non-dotted terminal of the first secondary winding of (1) and the transformer T2The end of the same name of the second secondary coil passes through a capacitor Cout1Connection, transformer T2The dotted terminal of the first secondary winding and the transformer T2The non-homonymous terminal of the second secondary coil passes through a capacitor Cout2Connection, transformer T2Is connected with the inductor L at the middle tap point of the first secondary coild1Inductance Ld1The other end of the capacitor is connected with a grounding capacitor Cd1And a bias voltage Vd(ii) a Transformer T2The center tap point of the second secondary winding is connected with an inductor Ld2Inductance Ld2Is connected to ground at the other endCapacitor Cd2And a bias voltage Vd(ii) a Transformer T2The non-dotted terminal of the primary coil of (A) is grounded, and a transformer T2The dotted terminal of the primary coil is connected with the output terminal of the output four-path voltage transformation coupling power synthesis network, and the transformer T2The homonymous end and the non-homonymous end of the first secondary coil are respectively connected with the first input end and the second input end of the output four-path voltage transformation coupling power synthesis network, and the transformer T2The non-homonymous end and the homonymous end of the second secondary coil are respectively connected with a third input end and a fourth input end of the output four-path voltage transformation coupling power synthesis network.
The following introduces the specific working principle and process of the present invention with reference to fig. 2:
radio frequency input signal through input terminal RFinThe input four-way voltage transformation coupling power distribution network is used for impedance transformation matching, the input four-way voltage transformation coupling power distribution network simultaneously enters the input ends of the first to fourth field effect transistor Darlington three-stack power amplification networks in the form of differential signals, the amplification networks are used for power amplification, the output ends of the first to fourth field effect transistor Darlington three-stack power amplification networks simultaneously output in the form of differential signals, the four-way signals are synthesized into a single-ended signal, and the single-ended signal is output from the output end RF through the output four-way voltage transformation coupling power synthesis networkoutAnd (6) outputting.
Based on above-mentioned circuit analysis, the utility model provides a high efficiency power amplifier based on enhancement mode transistor and difference of the amplifier structure based on integrated circuit technology in the past lie in that the core framework adopts the enhancement mode field effect transistor's of difference form three to pile up darlington pipe:
the structure of the differential three-stack darlington transistor is greatly different from that of the traditional single transistor, and the description is omitted;
the difference between the differential form of three-stack darlington tube and the Cascode differential amplifier is that: the stacked grid compensation capacitor of the common grid tube of the Cascode transistor is a capacitor with a large capacitance value and is used for realizing alternating current grounding of the grid, and the differential three-stacked Darlington tube adopts a Darlington structure that a common source amplifier is combined with a three-stacked amplifier, so that the high-frequency gain and the power capacity of the circuit are greatly improved.
In the whole high-efficiency power amplifier based on the enhancement transistor, the size of the transistor and the sizes of other resistors and capacitors are determined after the gain, bandwidth, output power and other indexes of the whole circuit are comprehensively considered, and through later-stage layout design and reasonable layout, the required indexes can be better realized, and the high-power output capacity, high-power gain and good input-output matching characteristic are realized.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (4)
1. A high-efficiency power amplifier based on an enhancement transistor is characterized by comprising an input four-way voltage transformation coupling power distribution network, a first field effect transistor Darlington three-stack power amplification network, a second field effect transistor Darlington three-stack power amplification network, a third field effect transistor Darlington three-stack power amplification network, a fourth field effect transistor Darlington three-stack power amplification network and an output four-way voltage transformation coupling power synthesis network;
the input end of the input four-way voltage transformation coupling power distribution network is the input end of the whole power amplifier, the first output end of the input four-way voltage transformation coupling power distribution network is connected with the input end of the first field effect transistor Darlington three-stack power amplification network, the second output end of the input four-way voltage transformation coupling power distribution network is connected with the input end of the second field effect transistor Darlington three-stack power amplification network, the third output end of the input four-way voltage transformation coupling power distribution network is connected with the input end of the third field effect transistor Darlington three-stack power amplification network, the third output end of the input four-way voltage transformation coupling power distribution network is connected with the;
the output end of the first field effect transistor Darlington three-stack power amplification network is connected with the first input end of the output four-path voltage transformation coupling power synthesis network; the output end of the second field effect transistor Darlington three-stack power amplification network is connected with the second input end of the output four-path voltage transformation coupling power synthesis network; the output end of the third field effect transistor Darlington three-stack power amplification network is connected with the third input end of the output four-path voltage transformation coupling power synthesis network; the output end of the fourth field effect transistor Darlington three-stack power amplification network is connected with the fourth input end of the output four-path voltage transformation coupling power synthesis network;
and the output end of the output four-path voltage transformation coupling power synthesis network is the output end of the whole power amplifier.
2. The enhancement-mode transistor-based high-efficiency power amplifier according to claim 1, wherein an inductor L is connected to an input end of the input four-way transformer-coupled power distribution network1Inductance L1Another end of the inductor L is connected with the inductor L2And a ground capacitor C1Inductance L2The other end of the transformer is connected with a coupling transformer T1Dotted terminal of primary winding, transformer T1The non-homonymous end of the primary coil of (1) is grounded; transformer T1The same-name end of the first secondary coil is connected with the first output end of the four-path voltage transformation coupling power distribution network, and the transformer T1The non-homonymous terminal of the first secondary coil is input into the second output terminal of the four-path voltage transformation coupling power distribution network, and the transformer T1The same-name end of the second secondary coil is connected with the third output end of the four-path voltage transformation coupling power distribution network, and the transformer T1The non-homonymous end of the second secondary coil is connected with a fourth output end of the four-path input voltage transformation coupling power distribution network; connecting transformer T1The center taps of the first and second secondary coils of (1) are grounded.
3. The enhancement-mode transistor-based high-efficiency power amplifier according to claim 1, wherein the first fet darlington three-stack power amplifier network, the second fet darlington three-stack power amplifier network, the third fet darlington three-stack power amplifier network, and the fourth fet darlington three-stack power amplifier networkThe input end of the network is connected with a capacitor CdjCapacitor CdjIs connected with the field effect transistor M at the other enddjGate electrode of (1), resistor RgjAnd a ground resistance RdjResistance RgjIs connected with the field effect transistor M at the other enddjA drain electrode of (1); field effect transistor MdjIs connected with a grounding resistor RojAnd a capacitor CojCapacitor Co1Is connected with a capacitor R at the other endsjEarth resistance RqjAnd a field effect transistor MrjOf a field effect transistor MrjThe source of (2) is grounded; resistance RsjThe other end of the capacitor is connected with a grounding capacitor CojResistance RtjAnd a field effect transistor MsjOf a field effect transistor MsjSource connected field effect transistor MrjA drain electrode of (1); resistance RtjThe other end of the capacitor is connected with a grounding capacitor CtjResistance RpjAnd a field effect transistor MtjOf a field effect transistor MtjSource connected field effect transistor MsjA drain electrode of (1); resistance RpjThe other end is connected with a field effect transistor MtjDrain electrode of (1), inductor LejThe output ends of the first field effect transistor Darlington three-stack power amplification network, the second field effect transistor Darlington three-stack power amplification network, the third field effect transistor Darlington three-stack power amplification network and the fourth field effect transistor Darlington three-stack power amplification network, and the inductor LejThe other end of the first and second electrodes is also connected with a field effect transistor MdjWherein j is 1, 2, 3, and 4.
4. The enhancement-mode transistor-based high efficiency power amplifier of claim 1, wherein the output four-way transformer-coupled power combining network comprises a transformer T2Transformer T2The non-dotted terminal of the first secondary winding of (1) and the transformer T2The end of the same name of the second secondary coil passes through a capacitor Cout1Connection, transformer T2The dotted terminal of the first secondary winding and the transformer T2The non-homonymous terminal of the second secondary coil passes through a capacitor Cout2Connection, transformer T2Is connected with the inductor L at the middle tap point of the first secondary coild1Inductance Ld1The other end of the capacitor is connected with a grounding capacitor Cd1And a bias voltage Vd(ii) a Transformer T2The center tap point of the second secondary winding is connected with an inductor Ld2Inductance Ld2The other end of the capacitor is connected with a grounding capacitor Cd2And a bias voltage Vd(ii) a Transformer T2The non-dotted terminal of the primary coil of (A) is grounded, and a transformer T2The dotted terminal of the primary coil is connected with the output terminal of the output four-path voltage transformation coupling power synthesis network, and a transformer T2The homonymous end and the non-homonymous end of the first secondary coil are respectively connected with the first input end and the second input end of the output four-path voltage transformation coupling power synthesis network, and the transformer T2The non-homonymous end and the homonymous end of the second secondary coil are respectively connected with the third input end and the fourth input end of the output four-path voltage transformation coupling power synthesis network.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110324011A (en) * | 2019-08-07 | 2019-10-11 | 青海民族大学 | A kind of high-power enhancement mode field effect transistor power amplifier |
| CN112152566A (en) * | 2020-09-16 | 2020-12-29 | 清华大学 | Doherty power amplifier based on dynamic power distribution |
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2019
- 2019-08-07 CN CN201921271933.9U patent/CN210693863U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110324011A (en) * | 2019-08-07 | 2019-10-11 | 青海民族大学 | A kind of high-power enhancement mode field effect transistor power amplifier |
| CN112152566A (en) * | 2020-09-16 | 2020-12-29 | 清华大学 | Doherty power amplifier based on dynamic power distribution |
| CN112152566B (en) * | 2020-09-16 | 2022-07-05 | 清华大学 | Doherty power amplifier based on dynamic power distribution |
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