CN109245734A - A kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier - Google Patents
A kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier Download PDFInfo
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- CN109245734A CN109245734A CN201811070251.1A CN201811070251A CN109245734A CN 109245734 A CN109245734 A CN 109245734A CN 201811070251 A CN201811070251 A CN 201811070251A CN 109245734 A CN109245734 A CN 109245734A
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- circuit
- sige bicmos
- radio
- power amplifier
- wave band
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifiers, including sequentially connected input matching network, forward gain amplifying circuit, inter-stage matching network, rear class power amplification circuit and impedance transformer network；The forward gain amplifying circuit, rear class power amplification circuit include SiGe BiCMOS；The forward gain amplifying circuit, rear class power amplification circuit input terminal be connected separately with the first biasing circuit, the second biasing circuit.Amplified using second level, and using SiGe BiCMOS as amplifier tube, it can satisfy and realize enough gains and output power under higher efficiency, it is poor to solve CMOS performance, the problems such as Group III-V semiconductor is at high cost, volume is big, and it is with relatively high characteristic frequency and noise characteristic, and it is more conducively integrated.
Description
Technical field
The present invention relates to radio-frequency power amplifier fields, and in particular to a kind of Ka wave band SiGe BiCMOS radio-frequency power is put
Big device.
Background technique
Radio-frequency power amplifier is important component indispensable in wireless transmitter, it is mainly used for channel radio
The modulated signal of transmitter in letter carries out power amplification, to meet the power demand of wireless communication RF signal, work belt
The performances such as width, output power, added efficiency seriously affect the quality of wireless communication system.
As described in Figure 1, existing radio-frequency power amplifier is realized using NM0S device, i.e., can be real using CMOS technology
It is existing.With the progress of CMOS technology, the high frequency performance of cmos device is improved, this also makes to penetrate using what CMOS technology was realized
The high frequency performance of frequency power amplifier is improved.But some difficulties also are brought to radio-frequency power amplifier simultaneously, such as
The oxide layer breakdown brownout of cmos device, current driving ability is poor, and substrate coupling is serious etc..In addition, on piece passive device
Performance is poor, and the Q value of especially on-chip inductor is too low, has seriously affected the elements such as power amplifier properties, therefore inductance and has often used
Piece external square type, i.e., passive device such as inductance and the active device such as CMOS device for the radio-frequency power amplifier that existing CMOS technology is realized
Part tends not to be formed on same chip, that is, the full sheet that can not achieve entire radio-frequency power amplifier is integrated.Since inductance needs
It to be manufactured using outside piece, all be integrated in the integrated radio-frequency power of the full sheet on same chip compared with all building blocks and amplify
The cost of device, existing radio-frequency power amplifier can be very high, and application is also inconvenient.
Other than the radio-frequency power amplifier that existing CMOS technology as shown in Figure 1 is realized, existing radio-frequency power amplifier
It, can not be with silicon technology although GaAs HBT better performances there are also being realized using GaAs Heterojunction Bipolar Transistors
It is integrated；In the art of semiconductor manufacturing, only silicon-based devices are just able to achieve large-scale manufacture, and GaAs is due to cannot achieve
Silicon technology integrates, therefore cost is very high.
For communication system to the eager demand of the general modules such as Ka wave band millimeter wave power amplifier, on the one hand existing industry is general
It is expensive all over the millimeter wave power amplifier chips based on Group III-V semiconductor technique used, limit its large-scale use.With
This simultaneously, that there are volumes is big for iii-v chip, process is many and diverse and is not easy to the unfavorable factors such as integrated.And germanium silicon semiconductor technique
Advantage of lower cost will substantially reduce the cost of chip in large batch of situation.In addition, germanium silicon semiconductor technique has multilayer
Metal, conducive to integrated and chip Miniaturization Design.
Summary of the invention
In order to solve the above-mentioned technical problem the present invention provides a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier.
The present invention is achieved through the following technical solutions:
A kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier, including sequentially connected input matching network, prime increase
Beneficial amplifying circuit, inter-stage matching network, rear class power amplification circuit and impedance transformer network；
The forward gain amplifying circuit, rear class power amplification circuit include SiGe BiCMOS；
The forward gain amplifying circuit, rear class power amplification circuit input terminal be connected separately with the first biasing circuit,
Second biasing circuit.SiGe transistor have power density and high gain, phase noise are low, the linearity is good, chip area is small and
The features such as cost performance is low.This programme is amplified using second level, and can satisfy using SiGe BiCMOS as amplifier tube
Realize enough gains and output power under higher efficiency, it is poor to solve CMOS performance, and Group III-V semiconductor is at high cost, volume
The problems such as big, and it is with relatively high characteristic frequency and noise characteristic, it is more conducively integrated.Due to as power amplifier group
The transistor of part itself will have certain power consumption, and various circuit elements will consume certain power, for example resistance, electricity
Sense, capacitor etc., in order to assess the efficiency of power amplifier, there are three types of common definition: drain efficiency, power added efficiency and whole
Body transfer efficiency.Since the transistor in the present invention is using the heterojunction structure SiGe crystal of the emitter region with broad-band gap
Pipe, substantially increases the Carrier Injection Efficiency of emitter junction, to make drain efficiency, power added efficiency and overall conversion efficiency
It is improved, so that the present invention meets required gain and output power.
Preferably, the input matching network, inter-stage matching network are identical with the circuit structure of impedance transformer network.It is defeated
Enter matching network, inter-stage matching network and impedance transformer network using identical structure, consistency not only can be improved, and can protect
Demonstrate,prove the stability of circuit.
Further, the input matching network includes being connected on the first inductance of input terminal and first capacitor, being connected to
Input terminal and the second capacitor of other end ground connection.Input matching network uses lump original part matching network, and first capacitor plays blocking
Effect, influences bias current by from input terminal, improves the linearity of forward gain amplifying circuit well.Input
Matching network, inter-stage matching network and impedance transformer network use identical circuit structure, inter-stage matching network and impedance transformation
Network uses foregoing circuit structure, i.e., using conjugation between grade between forward gain amplifying circuit, rear class power amplification circuit
The mode matched is attached, and makes the amplified signal of forward gain amplifying circuit that can smoothly flow into rear class power amplification circuit.
Further in above scheme, the capacitance of the first capacitor is 1425pF to 1575pF.First capacitor and the
One inductance is connected in series, and first capacitor mainly plays blocking, still, in the circuit, reasonably selects capacitance size, makes the electricity
Hold the effect for both having had impedance transformation, it may have blocking effect improves interstage matched degree.
Further for interstage matched degree is such as improved in above scheme, the capacitance of the first capacitor is 1500.1pF.
Preferably, first biasing circuit includes the second inductance, before the both ends of second inductance are connected to
On the input terminal and power supply of stage gain amplifying circuit.
Preferably, second biasing circuit include after being connected in series one end be connected on power supply and after the other end is connected to
The second resistance and the 5th inductance of the input terminal of grade power amplification circuit.Second biasing circuit is added compared to the first biasing circuit
One resistance, is allowed to form biasing networks after connecting with inductance, has been considered as the stability for improving circuit.Circuit pair is reduced simultaneously
The sensibility of temperature change.
Preferably, the forward gain amplifying circuit further includes be connected in turn on SiGe BiCMOS collector
The other end of three inductance, first resistor, the first resistor is connected on power supply, forward gain amplifying circuit SiGe BiCMOS
Emitter ground connection.
Preferably, the rear class power amplification circuit further includes the 6th inductance, one end of the 6th inductance is connected to
On power supply and the other end is connected with SiGe BiCMOS collector, and the emitter of rear class power amplification circuit SiGe BiCMOS connects
Ground.
It is further in above scheme, it describedly is the top metal of chip.Chip has metal layer and Jie in technique
Matter layer, is arranged alternately, and 7 layers altogether, using the top metal layer of chip as ground, reduces dead resistance, improves passive device
Isolation between part, while reducing the use of through-hole, reduce parasitic inductance and dead resistance, improves the Q value of circuit.
Compared with prior art, the present invention having the following advantages and benefits:
1, the present invention is amplified using second level, and can satisfy as amplifier tube in higher efficiency using SiGe BiCMOS
It is lower to realize enough gains and output power, the problems such as CMOS performance is poor, and Group III-V semiconductor is at high cost, volume is big is solved, and
And it is with relatively high characteristic frequency and noise characteristic, it is more conducively integrated.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is the circuit diagram of existing radio-frequency power amplifier.
Fig. 2 is the principle of the present invention block diagram.
Fig. 3 is the circuit diagram of radio-frequency power amplifier of the invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made
For limitation of the invention.
Embodiment 1
A kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier as shown in Figure 2 is applied to fully integrated radio frequency electrical
The fields such as road, communication SOC, including input matching network, forward gain amplifying circuit, inter-stage matching network, rear class power amplification
Circuit and impedance transformer network, are sequentially connected；
The forward gain amplifying circuit, rear class power amplification circuit include SiGe BiCMOS；
The forward gain amplifying circuit, rear class power amplification circuit input terminal be connected separately with the first biasing circuit,
Second biasing circuit.
Foregoing circuit can have good power output and gain by way of two-stage difference emphasis.And because
SiGe transistor has the heterojunction structure of the emitter region of broad-band gap, substantially increases the Carrier Injection Efficiency of emitter junction, adds
Fast carrier improves characteristic frequency in the drift motion of base area, so as to reduce noise, has the good linearity.
Embodiment 2
The present embodiment optimizes on the basis of the above embodiments, i.e., the described input matching network, inter-stage matching network
It is identical with the circuit structure of impedance transformer network.Three circuits use identical circuit structure, and consistency not only can be improved, and
It can guarantee the stability of circuit.Specifically, as shown in figure 3, following structures can be used in it, i.e., including being connected on the first of input terminal
Inductance and first capacitor, the second capacitor for being connected to input terminal and other end ground connection.
As shown in Figure 1, input matching network includes inductance L11, capacitor C1, capacitor C11, inter-stage matching network includes inductance
L22, capacitor C2, capacitor C22, impedance transformer network include inductance L33, capacitor C3, capacitor 33.Impedance transformer network includes inductance
L33, capacitor C3, capacitor 33 can make load impedance transform to a target value by converting its parameter.
In order to improve the interstage matched degree of circuit, the capacitance of first capacitor is 1500.1pF.The value is an optimal value, but
It is that in actual design process, the capacitance of first capacitor is 1425pF to 1575pF, i.e., in left and right a certain range of optimal value
?.
Embodiment 3
On the basis of the above embodiments, as shown in figure 3, forward gain amplifying circuit, rear class power amplification circuit, first
Biasing circuit, the second biasing circuit can be used such as flowering structure.
First biasing circuit includes the second inductance L1, and the both ends of second inductance are connected to forward gain amplification electricity
On the input terminal and power supply on road.
Second biasing circuit includes that one end is connected on power supply after being connected in series and the other end is connected to rear class power amplification electricity
The second resistance R2 and the 5th inductance L3 of the input terminal on road.Using the biasing circuit of this structure, the inductance in biasing circuit is joined
With match and impedance converts, the use of original part can be effectively reduced, reduce cost, reduce area, reliable performance.
Forward gain amplifying circuit further includes the third inductance L2 being connected in turn on SiGe BiCMOS collector, first
Resistance R1, the other end of the first resistor are connected on power supply, the transmitting of forward gain amplifying circuit SiGe BiCMOS Q1
Pole ground connection.
Rear class power amplification circuit further includes the 6th inductance L4, and one end of the 6th inductance is connected on power supply and another
End is connected with SiGe BiCMOS collector, the emitter ground connection of rear class power amplification circuit SiGe BiCMOS Q2.
This programme can reach relatively high gain, efficiency and output power, circuit knot by simple two-stage common source configuration
Structure is simple, practical, and chip area is small, at low cost, is easily integrated.
Resistance R1 and resistance R2 are also acted using temperature negative-feedback technology in addition to stabilizing circuit and are improved biasing circuit 6
Temperature stability effect.
Ground is the top metal of chip.
The operating center frequency of the radio-frequency power amplifier of the present embodiment is in 33~37GHz.Forward gain amplifying circuit is
Gain is considered as the small SiGe HBT triode of size, rear class power amplification circuit in order to which output power is considered as parallel connection
The big SiGe HBT triode of two sizes.The SiGe BiCOMS technique that the present invention uses can overcome CMOS performance difference and III-V
Volume existing for race's chip is big, process is many and diverse and is not easy to the problems such as integrated, also has the advantage that simultaneously
1, forward gain amplifying circuit, rear class power amplification circuit are all made of SiGe HBT triode, due to SiGe HBT
With good frequency characteristic, so the overall performance of circuit can be greatly improved.SiGe HBT is also able to achieve big electricity simultaneously
The amplitude of oscillation and big operating current are pressed, gain, current driving ability and the peak power output of circuit can be improved.
2, forward gain amplifying circuit, rear class power amplification circuit are all made of SiGe HBT triode, can pass through SiGe
BiCOMS technique realization be integrated in same chip, input matching network, forward gain amplifying circuit, inter-stage matching network, after
Grade power amplification circuit, impedance transformer network, the first biasing circuit, the second biasing circuit can realize on piece, circuit structure
Simply, circuit area is small, to realize the high integration and miniaturization of circuit.
A component and its parameter of the present embodiment can be used 1 example device of table, the table only as a specific embodiment,
It is not the restriction to this programme.
Table 1
| Device name | Specification | Device name | Specification |
| Capacitor C11 | 65pF | Inductance L22 | 72pH |
| Capacitor C1 | 1500.1pF | Inductance L3 | 428pH |
| Capacitor C22 | 60pF | Inductance L4 | 1.103nH |
| Capacitor C2 | 150pF | Inductance L33 | 72pH |
| Capacitor C3 | 1500.1pF | Resistance R1 | 23.4Ohm |
| Capacitor C33 | 78pF | Resistance R2 | 56.9Ohm |
| Inductance L11 | 123pH | Transistor Q1 | 0.12μm*6μm*1 |
| Inductance L1 | 443pH | Transistor Q2 | 0.12μm*12μm*2 |
| Inductance L2 | 1.103nH |
Using foregoing circuit structure and above-mentioned component, it is capable of the wireless frequency of 33~37GHz of good work and Ka wave band
Duan Zhong, by available in the simulation result of the frequency range to circuit of the embodiment of the present invention, gain reaches 18dB, peak power output
Up to 10dBm, power added efficiency at this time is more than 21%, and S parameter is also in good range.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier, which is characterized in that including sequentially connected input pair net
Network, forward gain amplifying circuit, inter-stage matching network, rear class power amplification circuit and impedance transformer network；The forward gain
Amplifying circuit, rear class power amplification circuit include SiGe BiCMOS；
The forward gain amplifying circuit, rear class power amplification circuit input terminal be connected separately with the first biasing circuit, second
Biasing circuit.
2. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier according to claim 1, which is characterized in that described
Input matching network, inter-stage matching network are identical with the circuit structure of impedance transformer network.
3. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier according to claim 1, which is characterized in that described
Input matching network includes being connected on the first inductance of input terminal and first capacitor, being connected to the of input terminal and other end ground connection
Two capacitors.
4. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier according to claim 3, which is characterized in that described
The capacitance of first capacitor is 1425pF to 1575pF.
5. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier according to claim 3, which is characterized in that described
The capacitance of first capacitor is 1500.1pF.
6. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier according to claim 1, which is characterized in that described
First biasing circuit includes the second inductance, and the both ends of second inductance are connected to the input terminal of forward gain amplifying circuit
On power supply.
7. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier according to claim 1, which is characterized in that described
Second biasing circuit includes that one end is connected on power supply after being connected in series and the other end is connected to the input of rear class power amplification circuit
The second resistance at end and the 5th inductance.
8. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier according to claim 1, which is characterized in that described
Forward gain amplifying circuit further includes the third inductance being connected in turn on SiGe BiCMOS collector, first resistor, and described
The other end of one resistance is connected on power supply, the emitter ground connection of forward gain amplifying circuit SiGe BiCMOS.
9. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier according to claim 1, which is characterized in that described
Rear class power amplification circuit further includes the 6th inductance, and one end of the 6th inductance is connected on power supply and the other end and SiGe
BiCMOS collector is connected, the emitter ground connection of rear class power amplification circuit SiGe BiCMOS.
10. a kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier, feature according to claim 8 or 9 exist
In, describedly be chip top metal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2017109968628 | 2017-10-20 | ||
| CN201710996862.8A CN107659278A (en) | 2017-10-20 | 2017-10-20 | A kind of Ka wave bands SiGe BiCMOS radio-frequency power amplifiers |
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| CN109245734A true CN109245734A (en) | 2019-01-18 |
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| CN201710996862.8A Pending CN107659278A (en) | 2017-10-20 | 2017-10-20 | A kind of Ka wave bands SiGe BiCMOS radio-frequency power amplifiers |
| CN201811070251.1A Pending CN109245734A (en) | 2017-10-20 | 2018-09-13 | A kind of Ka wave band SiGe BiCMOS radio-frequency power amplifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112904046A (en) * | 2021-02-10 | 2021-06-04 | 复旦大学 | Air flow monitoring system of aircraft in atmosphere |
| CN113726299A (en) * | 2021-11-03 | 2021-11-30 | 成都明夷电子科技有限公司 | Four-stage differential cascode noise amplifier based on SiGe-BiCMOS (silicon germanium-bipolar complementary metal oxide semiconductor) process |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108494374A (en) * | 2018-04-09 | 2018-09-04 | 中国科学院微电子研究所 | A kind of RF power amplifier circuit |
| CN109462379A (en) * | 2019-01-18 | 2019-03-12 | 广西芯百特微电子有限公司 | Power amplifier matching circuit and power amplifier |
| CN114448366B (en) * | 2022-02-09 | 2024-03-12 | 苏州英嘉通半导体有限公司 | Power amplifier |
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| EP0622894A2 (en) * | 1993-04-27 | 1994-11-02 | Sony Corporation | Semiconductor power amplifier integrated circuit |
| CN1929295A (en) * | 2005-09-08 | 2007-03-14 | 财团法人工业技术研究院 | Dynamic bias circuit for a radio-frequency amplifier |
| CN105743450A (en) * | 2016-01-29 | 2016-07-06 | 上海华虹宏力半导体制造有限公司 | Radio frequency power amplifier |
| CN105915256A (en) * | 2015-01-07 | 2016-08-31 | 天工方案公司 | Front-end integrated circuit for WLAN applications |
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2017
- 2017-10-20 CN CN201710996862.8A patent/CN107659278A/en active Pending
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- 2018-09-13 CN CN201811070251.1A patent/CN109245734A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0622894A2 (en) * | 1993-04-27 | 1994-11-02 | Sony Corporation | Semiconductor power amplifier integrated circuit |
| CN1929295A (en) * | 2005-09-08 | 2007-03-14 | 财团法人工业技术研究院 | Dynamic bias circuit for a radio-frequency amplifier |
| CN105915256A (en) * | 2015-01-07 | 2016-08-31 | 天工方案公司 | Front-end integrated circuit for WLAN applications |
| CN105743450A (en) * | 2016-01-29 | 2016-07-06 | 上海华虹宏力半导体制造有限公司 | Radio frequency power amplifier |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112904046A (en) * | 2021-02-10 | 2021-06-04 | 复旦大学 | Air flow monitoring system of aircraft in atmosphere |
| CN113726299A (en) * | 2021-11-03 | 2021-11-30 | 成都明夷电子科技有限公司 | Four-stage differential cascode noise amplifier based on SiGe-BiCMOS (silicon germanium-bipolar complementary metal oxide semiconductor) process |
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| Publication number | Publication date |
|---|---|
| CN107659278A (en) | 2018-02-02 |
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Effective date of registration: 20201013 Address after: 610000 Chengdu, Sichuan, China (Sichuan) free trade trial area, Chengdu Shuangliu District, Southwest Airport Economic Development Zone, 1 Xingxing street, Shuangxing road. Applicant after: CHENGDU SCTC TECH Co.,Ltd. Address before: 650000 ERON, Naxi Autonomous County, Lijiang, Yunnan Province, a group of Emei site of Pei Liang village committee, 35 Applicant before: Hu Jianquan |
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