CN104270110A - Variable gain amplifier based on voltage-controlled inductive load - Google Patents
Variable gain amplifier based on voltage-controlled inductive load Download PDFInfo
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- CN104270110A CN104270110A CN201410206571.0A CN201410206571A CN104270110A CN 104270110 A CN104270110 A CN 104270110A CN 201410206571 A CN201410206571 A CN 201410206571A CN 104270110 A CN104270110 A CN 104270110A
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- voltage
- variable gain
- controlled
- output
- nmos fet
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- Y02B60/50—
Abstract
The present invention discloses a variable gain amplifier based on voltage-controlled inductive load. The amplifier comprises: a full-differential transconductance amplifier Gm, a positive-phase voltage input Vin1 and a negative-phase voltage input Vin2 thereof receiving input voltage signals together, the signals being amplified and converted into current signals by the full-differential transconductance amplifier Gm and output from a negative-phase output Vout2 and a positive-phase output Vout1 thereof; and two voltage-controlled active inductors L 1, L 2 that are respectively connected with the negative-phase output Vout2 and the positive-phase output Vout1 of the full-differential transconductance amplifier Gm, the impedance of two voltage-controlled active inductors L1, L2 being adjusted by a control voltage VC, thereby changing the amplitude values of voltage signals at the negative-phase output Vout2 and the positive-phase output Vout1. The present invention achieves a variable gain of an amplifier based on voltage-controlled inductive load, greatly reduces the chip area of the whole variable gain amplifier, improves the integration level of a wireless communication receiver system and realizes the variation of the gain of output signals through changing voltage-controlled load. The amplifier is simple in circuit structure and low in power consumption.
Description
Technical field
The present invention relates to variable gain amplifier, particularly a kind of variable gain amplifier based on voltage-controlled inductive load.
Background technology
The amplitude of the signal received in wireless communication system can change along with the change of receiver and signal source distance.When receiver and signal source distant time, Received signal strength amplitude is less, and signal processing module can be caused normally to process it; When receiver and signal source close together, Received signal strength amplitude is comparatively large, signal processing module can be caused saturated, cause distorted signals.In addition, the signal amplitude of constantly change can stablize effective settling signal processing capacity to signal processing module, is also a challenge.In order to the normal work making the change of Received signal strength amplitude not affect signal processing module, needing the amplification carrying out different gains according to the difference of Received signal strength amplitude, is the pending signal of the amplitudes such as signal processing module provides.Therefore, need in transceiver to add the gain control module with gain-variable.
Gain control module can be realized by passive numerical-control attenuator usually, but passive numerical-control attenuator can cause insertion loss, thus needs the signal amplitude gain that previous stage provides larger, and this can increase the design difficulty of previous stage circuit design.Moreover; during coupling between the phase shift compensation that passive numerical-control attenuator carries out control switch and adjacent block; usually can adopt compared with inductance passive in multi-disc; and passive inductance takies larger chip area usually on sheet; therefore the usual entire area of passive numerical-control attenuator is larger, and this point is unfavorable for applying in the wireless communication system that height is integrated.Variable gain amplifier overcomes the deficiency of passive numerical-control attenuator, and not only self can provide gain, and can realize gain control function under the prerequisite taking less chip area.
Due to the character of components and parts itself, the usual operating frequency range of variable gain amplifier adopting complementary metal oxide semiconductors (CMOS) (CMOS) field-effect transistor to realize is less, can not meet the requirement of current the Technology of Ultra development.And the noiseproof feature of cmos fet transistor is poor, be unfavorable for carrying out low noise process to acknowledge(ment) signal.In addition, on the sheet adopted in variable gain amplifier, passive inductance can take larger area, is thus unfavorable for the design of high integration variable gain amplifier.
A kind of variable gain amplifier is disclosed in patent document " variable gain amplifier " (application publication number CN102104367A, application number 201110053476.8, date of application 2011.06.22).This variable gain amplifier adopts CMOS technology, comprise difference channel, this difference channel comprises the first load current, the second load current and source degeneracy circuit, this difference channel also comprises the first emitter follower circuit and the second emitter follower circuit, wherein the grid of the first emitter follower circuit is connected with the forward voltage input of described difference channel, drains to be connected with the first described load circuit; The described second emitter follower ground grid of circuit is connected with the negative voltage input of described difference channel, drains to be connected with the second described load circuit; The source electrode of two described emitter follower circuit is linked to the two ends of described source degeneracy circuit respectively.Although this technology adopts CMOS technology effectively can reduce the chip area footprints of overall variable gain amplifier, but due to the cause that the characteristic frequency of MOS transistor own is not high and noise is larger, make its operating frequency range greatly limited, and the variable gain that can not realize under less noise conditions is amplified.
A kind of variable gain RF amplifier is disclosed in patent document " variable gain RF amplifier " (application publication number CN101604962A, application number 200910134974.8, date of application 2009.04.20).This variable gain RF amplifier has: input node; Variable current source, comprises the control input end being coupled in this input node; First and second branch roads, be coupled in parallel between the first feeder ear and variable current source, first and second branch roads define be configured to by the first and second differential gain signal control differential to and there is the second and second output, one of output comprises the output contact of variable gain amplifier; And voltage divider, have the intermediate node being coupled in the first and second outputs, wherein this node is also by capacitor-coupled input node.Although this technology adopts bipolar transistor to form variable gain amplifier, can effectively have wider frequency operating range, the characteristic frequency of the transistor of traditional handicraft is lower, can not meet the frequency requirement of the application in current Wireless Telecom Equipment.In addition, in this technology, circuit structure is complicated, and stepping adds chip area, and also higher to designing requirement, and thus design difficulty is larger.
A kind of wide dynamic range variable gain amplifier based on SiGeHBT is disclosed in paper " a kind of wide dynamic range variable gain amplifier based on SiGeHBT " (" microelectronics " 2013.12:773-776).Amplifier, by three-stage cascade Structure composing, is respectively input stage, gain control stages and output stage.Adopt the new gain control structure proposed, achieve wider gain dynamic range.Although this technology adopts bipolar transistor to form variable gain amplifier, can effectively have wider frequency operating range, but adopt passive on-chip inductor in this technology, the chip area taken due to inductance passive on sheet is larger, thus cause the area of overall variable gain amplifier larger, be unfavorable for the application of the wireless communication receiver of high integration, be also unfavorable for reducing manufacturing cost.
Summary of the invention
For overcoming the shortcomings and deficiencies of above-mentioned prior art, the invention provides a kind of variable gain amplifier based on voltage-controlled inductive load.
The technical solution used in the present invention is:
Based on the variable gain amplifier of voltage-controlled inductive load, comprising: fully differential trsanscondutance amplifier G
m, its positive voltage input end V
in1with negative voltage input end V
in2the voltage signal of common reception input, through fully differential trsanscondutance amplifier G
mcarry out amplifying and being converted into current signal, from its negative output V
out2with positive output end V
out1export; Two voltage-controlled active inductance L
1, L
2, connect fully differential trsanscondutance amplifier G respectively
mnegative output V
out2with positive output end V
out1, by control voltage V
cto two voltage-controlled active inductance L
1, L
2impedance adjust, change negative output V
out2with positive output end V
out1the range value of the voltage signal at place.
Preferably, described two voltage-controlled active inductance L
1, L
2by simultaneously by control voltage V
ccontrol.
Concrete, flow through voltage-controlled active inductance L
1current signal at negative output V
out2place produces the output voltage signal contrary with input signal phase place, flows through voltage-controlled active inductance L
2current signal at positive output end V
out1place produces the output voltage signal identical with input signal phase place.
Described fully differential trsanscondutance amplifier G
mby the SiGe heterojunction bipolar transistor Q of two NPN structures
1, Q
2the bias current sources I of constant current is exported with one
biasform, described bipolar transistor Q
1and Q
2base stage respectively with fully differential trsanscondutance amplifier G
mpositive voltage input end V
in1with negative voltage input end V
in2be connected, bipolar transistor Q
1and Q
2emitter all with bias current sources I
biasone end be connected, bias current sources I
biasthe other end and power supply be connected; Bipolar transistor Q
1and Q
2collector electrode be connected respectively to negative phase current output I
out1with positive current output terminal I
out2.
Described voltage-controlled active inductance is by the SiGe heterojunction bipolar transistor Q of a NPN structure
3with four nmos fet M
1, M
2, M
3, M
4form; Bipolar transistor Q
3emitter and current signal input I
inconnect, the collector electrode of this pipe and power supply V
dDconnect; Four nmos fet M
1, M
2, M
3, M
4grid all connect voltage controling input end V
c, substrate terminal is all connected with self source electrode; Nmos fet M
1source electrode and bipolar transistor Q
3base stage connect, nmos fet M
1drain electrode and nmos fet M
2source electrode connect, nmos fet M
2drain electrode and nmos fet M
3source electrode connect, nmos fet M
3drain electrode and nmos fet M
4source electrode connect, nmos fet M
4drain electrode be connected to power supply V
dD.
Compared with prior art, the beneficial effect that technical solution of the present invention is brought has:
(1) the present invention adopts the SiGe heterojunction bipolar transistor of NPN structure to form the trsanscondutance amplifier of variable gain amplifier, this transistor has higher characteristic frequency, and the variable gain signal amplitude that can realize wider frequency range when not adopting feedback arrangement is amplified.In addition, the low noise advantage of bipolar transistor itself makes it may be used for the amplification of low-noise variable gain signal amplitude;
(2) the present invention adopts active inductance as load, compensates the parasitic capacitance of output, improves operating frequency range.Because the size of active device is much smaller than passive inductance, therefore adopts active inductance greatly can reduce overall variable gain amplifier chip area, improve the integrated level of wireless communication receiver system, reduce the processing and manufacturing cost of receiver chip;
(3) the present invention adopts voltage control load to change the change realizing output gain signal, and circuit structure is simple, be easy to design, and overall power is lower.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the variable gain amplifier based on voltage-controlled inductive load of the present invention;
Fig. 2 is fully differential trsanscondutance amplifier G of the present invention
mschematic diagram;
Fig. 3 is the schematic diagram of voltage-controlled active inductance of the present invention.
Embodiment
Be described in further details the present invention below by embodiment and accompanying drawing, these embodiments are only used for the present invention is described, do not limit the scope of the invention.
As shown in Figure 1, the present invention " variable gain amplifier based on voltage-controlled inductive load " is by a fully differential trsanscondutance amplifier G
mwith two voltage-controlled active inductance L
1, L
2form.This variable gain amplifier is by a positive voltage input end V
in1with a negative voltage input end V
in2common reception input voltage signal, input voltage signal is through fully differential trsanscondutance amplifier G
mcarry out amplifying and being converted into current signal, this current signal produces output voltage signal by two voltage-controlled active inductances at corresponding output.Wherein, voltage-controlled active inductance L is flowed through
1current signal at negative output V
out2place produces the output voltage signal contrary with input signal phase place, flows through voltage-controlled active inductance L
2current signal at positive output end V
out1place produces the output voltage signal identical with input signal phase place.Two voltage-controlled active inductance L
1, L
2simultaneously by control voltage V
ccontrol, its impedance is adjusted, change the range value of output voltage signal, thus realize output voltage amplitude to the controllable adjustment of input voltage amplitude gain, realize the function that variable gain is amplified.
As shown in Figure 2, the fully differential trsanscondutance amplifier G of the present invention " variable gain amplifier based on voltage-controlled inductive load "
mby the SiGe heterojunction high electron mobility bipolar transistor Q of two NPN structures
1, Q
2with the bias current sources I that a temperature independent constant current exports
biasform.SiGe heterojunction high electron mobility bipolar transistor Q
1and Q
2base stage respectively with fully differential trsanscondutance amplifier G
mpositive voltage input end V
in1with negative voltage input end V
in2be connected.SiGe heterojunction high electron mobility bipolar transistor Q
1and Q
2emitter all with bias current sources I
biasone end be connected, bias current sources I
biasthe other end and power supply be connected.SiGe heterojunction high electron mobility bipolar transistor Q
1and Q
2collector electrode respectively with negative phase current output I
out1with positive current output terminal I
out2be connected.Input signal is by SiGe heterojunction high electron mobility bipolar transistor Q
1and Q
2base stage enter fully differential trsanscondutance amplifier G
mafter, change into the current signal of amplitude and input voltage signal amplitude proportional, respectively at current output terminal I
out1and I
out2export.In Fig. 2, the direction of arrow represents the direction of output current.
As shown in Figure 3, the voltage-controlled active inductance of the present invention " variable gain amplifier based on voltage-controlled inductive load " is by the SiGe heterojunction high electron mobility bipolar transistor Q of a NPN structure
3with four nmos fet M
1, M
2, M
3, M
4form.SiGe heterojunction high electron mobility bipolar transistor Q
3emitter and current signal input I
inconnect, the collector electrode of this pipe and power supply V
dDconnect.Nmos fet M
1grid and voltage controling input end V
cconnect, the substrate terminal of this pipe is connected with its source electrode, the source electrode of this pipe and SiGe heterojunction high electron mobility bipolar transistor Q
3base stage connect.MOS field effect transistor M
2grid and voltage controling input end V
cconnect, the substrate terminal of this pipe is connected with its source electrode, the source electrode of this pipe and nmos fet M
1drain electrode connect.MOS field effect transistor M
3grid and voltage controling input end V
cconnect, the substrate terminal of this pipe is connected with its source electrode, the source electrode of this pipe and nmos fet M
2drain electrode connect.MOS field effect transistor M
4grid and voltage controling input end V
cconnect, the substrate terminal of this pipe is connected with its source electrode, the source electrode of this pipe and nmos fet M
3drain electrode connect, the drain electrode of this pipe and power supply V
dDconnect.Current input signal is from current signal input I
inafter input, flow through SiGe heterojunction high electron mobility bipolar transistor Q
3, at current signal input I
inplace can obtain corresponding output voltage.By voltage controling input end V
cchange change four nmos fet M
1, M
2, M
3, M
4conducting resistance, the inductance value of voltage-controlled active inductance can be changed, to realize the change of output voltage size, thus complete the function of voltage-controlled variable gain.
The above embodiment only have expressed embodiments of the present invention; therefore the restriction to the scope of the claims of the present invention can not be interpreted as; if the active inductance structure adopting the active inductance of other structures to replace to protect in the present invention; to realize the replacement scheme of voltage-controlled variable gain amplifier, also belong to scope.
Claims (5)
1. based on the variable gain amplifier of voltage-controlled inductive load, it is characterized in that, comprising:
Fully differential trsanscondutance amplifier G
m, its positive voltage input end V
in1with negative voltage input end V
in2the voltage signal of common reception input, through fully differential trsanscondutance amplifier G
mcarry out amplifying and being converted into current signal, from its negative output V
out2with positive output end V
out1export;
Two voltage-controlled active inductance L
1, L
2, connect fully differential trsanscondutance amplifier G respectively
mnegative output V
out2with positive output end V
out1, by control voltage V
cto two voltage-controlled active inductance L
1, L
2impedance adjust, change negative output V
out2with positive output end V
out1the range value of the voltage signal at place.
2. the variable gain amplifier based on voltage-controlled inductive load according to claim 1, is characterized in that: described two voltage-controlled active inductance L
1, L
2by simultaneously by control voltage V
ccontrol.
3. the variable gain amplifier based on voltage-controlled inductive load according to claim 1, is characterized in that: flow through voltage-controlled active inductance L
1current signal at negative output V
out2place produces the output voltage signal contrary with input signal phase place, flows through voltage-controlled active inductance L
2current signal at positive output end V
out1place produces the output voltage signal identical with input signal phase place.
4. the variable gain amplifier based on voltage-controlled inductive load according to claim 1, is characterized in that: described fully differential trsanscondutance amplifier G
mby the SiGe heterojunction bipolar transistor Q of two NPN structures
1, Q
2the bias current sources I of constant current is exported with one
biasform, described bipolar transistor Q
1and Q
2base stage respectively with fully differential trsanscondutance amplifier G
mpositive voltage input end V
in1with negative voltage input end V
in2be connected, bipolar transistor Q
1and Q
2emitter all with bias current sources I
biasone end be connected, bias current sources I
biasthe other end and power supply be connected; Bipolar transistor Q
1and Q
2collector electrode be connected respectively to negative phase current output I
out1with positive current output terminal I
out2.
5. the variable gain amplifier based on voltage-controlled inductive load according to claim 2, is characterized in that: described voltage-controlled active inductance is by the SiGe heterojunction bipolar transistor Q of a NPN structure
3with four nmos fet M
1, M
2, M
3, M
4form; Bipolar transistor Q
3emitter and current signal input I
inconnect, the collector electrode of this pipe and power supply V
dDconnect; Four nmos fet M
1, M
2, M
3, M
4grid all connect voltage controling input end V
c, substrate terminal is all connected with self source electrode; Nmos fet M
1source electrode and bipolar transistor Q
3base stage connect, nmos fet M
1drain electrode and nmos fet M
2source electrode connect, nmos fet M
2drain electrode and nmos fet M
3source electrode connect, nmos fet M
3drain electrode and nmos fet M
4source electrode connect, nmos fet M
4drain electrode be connected to power supply V
dD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410206571.0A CN104270110A (en) | 2014-09-25 | 2014-09-25 | Variable gain amplifier based on voltage-controlled inductive load |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410206571.0A CN104270110A (en) | 2014-09-25 | 2014-09-25 | Variable gain amplifier based on voltage-controlled inductive load |
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| Publication Number | Publication Date |
|---|---|
| CN104270110A true CN104270110A (en) | 2015-01-07 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410206571.0A Pending CN104270110A (en) | 2014-09-25 | 2014-09-25 | Variable gain amplifier based on voltage-controlled inductive load |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106330114A (en) * | 2016-08-15 | 2017-01-11 | 深圳市蓝狮微电子有限公司 | Amplifier circuit and frequency compensation method |
| CN111279611A (en) * | 2017-11-03 | 2020-06-12 | 华为技术有限公司 | Hybrid variable gain amplifier |
| CN113489464A (en) * | 2021-07-02 | 2021-10-08 | 西安电子科技大学 | Read-out circuit and half-edge shared read-out array for nanopore gene sequencing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101588163A (en) * | 2009-06-23 | 2009-11-25 | 中国人民解放军国防科学技术大学 | Difference high-pass filtering circuit based on symmetric active induction |
| CN103633940A (en) * | 2013-11-21 | 2014-03-12 | 哈尔滨工业大学 | Active inductance type voltage-controlled oscillator |
| CN104242830A (en) * | 2014-09-21 | 2014-12-24 | 北京工业大学 | Reconfigurable ultra-broadband low noise amplifier with active inductor |
-
2014
- 2014-09-25 CN CN201410206571.0A patent/CN104270110A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101588163A (en) * | 2009-06-23 | 2009-11-25 | 中国人民解放军国防科学技术大学 | Difference high-pass filtering circuit based on symmetric active induction |
| CN103633940A (en) * | 2013-11-21 | 2014-03-12 | 哈尔滨工业大学 | Active inductance type voltage-controlled oscillator |
| CN104242830A (en) * | 2014-09-21 | 2014-12-24 | 北京工业大学 | Reconfigurable ultra-broadband low noise amplifier with active inductor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106330114A (en) * | 2016-08-15 | 2017-01-11 | 深圳市蓝狮微电子有限公司 | Amplifier circuit and frequency compensation method |
| CN106330114B (en) * | 2016-08-15 | 2019-03-19 | 深圳市瀚堃实业有限公司 | Amplifying circuit and frequency compensated method |
| CN111279611A (en) * | 2017-11-03 | 2020-06-12 | 华为技术有限公司 | Hybrid variable gain amplifier |
| CN111279611B (en) * | 2017-11-03 | 2022-04-05 | 华为技术有限公司 | Hybrid variable gain amplifier |
| CN113489464A (en) * | 2021-07-02 | 2021-10-08 | 西安电子科技大学 | Read-out circuit and half-edge shared read-out array for nanopore gene sequencing |
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Application publication date: 20150107 |