CN103762947B - A kind of low noise trsanscondutance amplifier of cross-couplings input - Google Patents
A kind of low noise trsanscondutance amplifier of cross-couplings input Download PDFInfo
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- CN103762947B CN103762947B CN201410015029.7A CN201410015029A CN103762947B CN 103762947 B CN103762947 B CN 103762947B CN 201410015029 A CN201410015029 A CN 201410015029A CN 103762947 B CN103762947 B CN 103762947B
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Abstract
The invention discloses a kind of low noise trsanscondutance amplifier with noise cancelling capabilities of cross-couplings input, this amplifier comprises cross-couplings input stage amplifier, sheet and accepts network and buffer circuit outward, and cross-couplings input stage amplifier comprises the first N-type MOS transistor, the second N-type MOS transistor, the 3rd P type MOS transistor, the 4th P type MOS transistor, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity; Buffer circuit comprises the first inductance, the second inductance, the 3rd inductance, the 4th inductance, the 5th electric capacity, the 6th electric capacity, the 7th electric capacity, the 8th electric capacity; Signal source and antenna internal resistance that sheet is accepted network packet outward and drawn together the 9th electric capacity, the tenth electric capacity, the 5th inductance, the 6th inductance, artificial antenna; The low noise trsanscondutance amplifier of this structure has the function of noise cancellation, adopts cross-couplings input, the performance of low-power consumption simultaneously.
Description
Technical field
The present invention relates to a kind of amplifier, particularly a kind of low noise with noise cancelling capabilities of cross-couplings inputTrsanscondutance amplifier.
Background technology
In radiofrequency signal receiver, low-noise amplifier is the first utmost point active circuit of receiver, and itself has veryLow noise coefficient also provides enough gains. Consider from whole receiver, low-noise amplifier should have higher increasingBenefit is the impact on whole receiver noise with the noise that suppresses rear utmost point radio circuit and intermediate-frequency circuit. In addition low noise,Amplifier itself should have lower noise coefficient to alleviate the design pressure of frequency mixer. Along with multi-transceiver technology and complicated tuneTechnology processed is applied in wireless telecommunications more and more, and the requirement of receiver various performance parameters is also improved gradually. Due toThe restriction of metal-oxide-semiconductor (MOS transistor) cut-off frequency, be difficult to radio circuit adopt such as amplifier feedback, acrossLead bootstrapping and wait the technology of improving performance. This makes the radio circuit can not can the various simulations of flexible Application as intermediate-frequency circuitCircuit design method is optimized and compromises. Low-noise amplifier is positioned at first utmost point of RF front-end circuit, according to systemThe formula of cascade noise coefficient, conclusive work is played in the impact of the noise coefficient of low-noise amplifier on whole radio circuitWith. In sum, the noise coefficient of reduction low-noise amplifier is the target that designer constantly pursues.
The structure of traditional low-noise amplifier roughly can be divided into the low noise of low-noise amplifier and the common gate of common sourceAcoustic amplifier. Common source low-noise amplifier, signal is inputted from grid. In order to realize impedance matching, reach signal optimumThe object of transmission, generally, at a source-electrode degradation inductance of source electrode access, the impedance of seeing into from grid has real part.Altogether grid input stage amplifier, signal is inputted from source electrode, if the equiva lent impedance that source electrode is seen into equate with the internal resistance of antenna,Capable of realizing impedance matching. But these two kinds of traditional amplifiers all have relatively high noise coefficient, reduce lowThe noise coefficient of noise amplifier mainly contains the important method such as noise cancellation and cross-couplings input.
It is that signal is put by two branch roads that the low-noise amplifier of noise cancellation structure has a variety of, general thinkingsObtain difference or single-ended output signal at output greatly. The noise producing for same device is through two branch roadsAfter remain relevant noise voltage signal. Adopt suitable circuit ride gain and phase difference, amplifying radiofrequency signalMeanwhile, offset the noise that corresponding device produces, so just can reach noise cancellation by the method for difference or single-ended counteractingObject. Also can understand by another kind of mode, signal amplifies by two branch roads, meanwhile, only has oneThe noise of the part of devices in road in the noise of device or additional another branch road exerts an influence at output. Like thisWords, the noise voltage of output remains on the numerical value of single branch amplifier of identical gain, and the ratio of gains list branch road of signalThe gain height of amplifier 6dB (put and be twice). So just reach relatively low noise coefficient.
Cross-couplings input technology is mainly to adopt the MOS transistor of a pair of mutual coupling as low noise amplificationThe input pipe of device, utilizes electric capacity by one of them metal oxide crystal of the MOS transistor of a pair of mutual couplingThe grid of pipe and the source electrode of another metal oxide link together, and have so just formed cross-couplings input. EachThe grid of MOS transistor and source electrode all connect opposite polarity radiofrequency signal. Like this, at MOS transistorThe size situation identical with bias voltage under, the actual mutual conductance of each MOS transistor has increased one times. CauseThis, in the case of identical power consumption and noise current, the gain of low-noise amplifier has increased one times, and then plays and fallThe effect of low low-noise amplifier noise coefficient.
According to the formula of noise coefficient, improve the gain of low-noise amplifier the optimization of noise coefficient is played to important workWith. And high-gain generally using DC current or power consumption as cost, in the structure of ohmic load, biasing greatlyThe pressure drop that electric current produces is attached on load resistance, is therefore wasted.
Summary of the invention
Goal of the invention: for above-mentioned prior art, provide a kind of low noise trsanscondutance amplifier of cross-couplings input, this is lowThe traditional cross-couplings input structure of noise ratio of noise trsanscondutance amplifier has lower noise and power consumption; Solve and pass simultaneouslySystem cross-couplings input structure produces the problem of larger voltage drop in the time of larger bias current on load resistance.
Technical scheme: for solving the problems of the technologies described above, the structure that the present invention adopts is that a kind of noise of cross-couplings input supportsThe low noise trsanscondutance amplifier that disappears, this amplifier comprises cross-couplings input stage amplifier, sheet and accepts network and isolation electricity outwardRoad; Described cross-couplings input stage amplifier comprises the first N-type MOS transistor, the second N-type metal oxideTransistor, the 3rd P type MOS transistor, the 4th P type MOS transistor, the first resistance, the second electricityResistance, the 3rd resistance, the 4th resistance, the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity; Described buffer circuitComprise the first inductance, the second inductance, the 3rd inductance, the 4th inductance, the 5th electric capacity, the 6th electric capacity, the 7th electric capacity,Eight electric capacity; Accept network packet outward for described and draw together the 9th electric capacity, the tenth electric capacity, the 5th inductance, the 6th inductance, artificial antennaSignal source and antenna internal resistance.
The negative terminal of the bottom crown of the 6th electric capacity and the 3rd inductance, the top crown of the 3rd electric capacity, the 3rd P type metal oxide crystalline substanceThe source electrode of body pipe connects; The anode of the bottom crown of the 5th electric capacity and the first inductance, the top crown of the first electric capacity, the first N-typeThe source electrode of MOS transistor connects; The top crown of the 6th electric capacity is connected with the top crown of the 5th electric capacity, and as lowThe anode of the input signal of noise trsanscondutance amplifier; The anode of the bottom crown of the 8th electric capacity and the second inductance, the second electric capacityThe source electrode of top crown, the second N-type MOS transistor connects; The negative terminal of the bottom crown of the 7th electric capacity and the 4th inductance,The top crown of the 4th electric capacity, the source electrode of the 4th P type MOS transistor connect; The top crown of the 8th electric capacity and the 7thThe top crown of electric capacity connects, and as the negative terminal of the input signal of low noise trsanscondutance amplifier; The first N-type metal oxideThe anode of transistorized grid and the first resistance, the bottom crown of the second electric capacity are connected; The second N-type MOS transistorGrid and the anode of the second resistance, the bottom crown of the first electric capacity be connected; The grid of the 3rd P type MOS transistorBe connected with the anode of the 3rd resistance, the bottom crown of the 4th electric capacity; The grid of the 4th P type MOS transistor and the 4thThe anode of resistance, the bottom crown of the 3rd electric capacity connect; The drain electrode of the first N-type MOS transistor and the 3rd P type goldThe drain electrode that belongs to oxide transistor connects, and as the anode of low noise trsanscondutance amplifier output signal; The second N-type goldThe drain electrode that belongs to oxide transistor is connected with the drain electrode of the 4th P type MOS transistor, and as low noise mutual conductanceThe negative terminal of amplifier output signal; The negative terminal of the 4th resistance is connected with the negative terminal of the 3rd resistance, and connects fixed voltageVbias2, for the grid of the 4th P type MOS transistor and the grid of the 3rd P type MOS transistor provideDirect current biasing; The negative terminal of the second resistance is connected with the negative terminal of the first resistance, and meets fixed voltage Vbias1, is a NThe grid of the grid of type MOS transistor and the second N-type MOS transistor provides direct current biasing; The first electricityThe negative terminal of sense and the negativing ending grounding of the second inductance; The positive termination supply voltage of the anode of the 3rd inductance and the 4th inductance.
Described signal source and the antenna internal resistance of accepting the artificial antenna of network is outward arranged on the defeated of low noise trsanscondutance amplifierEnter end, the output of the signal source of artificial antenna is connected with one end of antenna internal resistance; The anode of the 6th inductance, the 9th electric capacityTop crown be connected with the other end of antenna internal resistance; The anode of the bottom crown of the 9th electric capacity and the 5th inductance is connected to described lowThe anode of the input signal of noise trsanscondutance amplifier; The top crown of the negative terminal of the 6th inductance and the tenth electric capacity is connected to described lowThe negative terminal of the input signal of noise trsanscondutance amplifier; The negative terminal of the 5th inductance and, the bottom crown ground connection of the tenth electric capacity.
Beneficial effect: compared with prior art, the present invention has following beneficial effect:
1. noise coefficient is low. The first order of low noise trsanscondutance amplifier of the present invention in receiver system, to system noiseContribution play crucial effect. Low noise trsanscondutance amplifier of the present invention has reduced the noise system of circuit from two anglesNumber:
The first, adopt noise cancellation technique. Circuit of the present invention is by the first N-type MOS transistor and the 3rd PType MOS transistor and the second N-type MOS transistor and the 4th P type MOS transistor compositionTwo branch roads signal is amplified, obtain at difference output end the noise that opposite polarity radiofrequency signal is identical with polaritySignal. Subtract each other by positive and negative two outputs the object that reaches noise cancellation.
The second, adopt cross-couplings input. Low noise trsanscondutance amplifier of the present invention adopts laterally zygomorphic cross-couplings defeatedEnter, in the case of identical dc point, the actual mutual conductance of input MOS transistor be doubled,Improve the gain of whole low noise trsanscondutance amplifier, therefore reduced the noise coefficient of circuit.
2. electric current utilization ratio is high, low in energy consumption. Traditional cross-couplings input structure is with the burning of a pair of mutual couplingThing transistor is as input pipe, using resistance as load. Low noise trsanscondutance amplifier of the present invention adopts two pairs of couplings mutuallyMOS transistor as input pipe, simultaneously the MOS transistor of every a pair of mutual coupling is again that another is rightThe load of the MOS transistor of coupling mutually. Compared with traditional cross coupling structure, low noise of the present invention acrossLead amplifier in the situation that of identical gain and noise coefficient, power consumption is the half of traditional structure; Simultaneously because two pairs mutualThe MOS transistor of coupling, each other as the other side's load, does not adopt ohmic load, has therefore solved partially largeThe larger voltage drop producing on load resistance while putting electric current.
Brief description of the drawings
Fig. 1 is chip internal circuit diagram of the present invention;
Fig. 2 is that the sheet of circuit structure of the present invention is accepted network outward;
Fig. 3 is the simulation result figure that the present invention and traditional low noise trsanscondutance amplifier carry out noise coefficient comparison.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is done further and explained.
As shown in Figure 1, a kind of low noise trsanscondutance amplifier of cross-couplings input, this amplifier comprises cross-couplings inputLevel amplifier, sheet are accepted network and buffer circuit outward. Cross-couplings input stage amplifier comprises the first N-type burningThing transistor M1, the second N-type MOS transistor M2, the 3rd P type MOS transistor M3, the 4th PType MOS transistor M4, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, firstCapacitor C 1, the second capacitor C 2, the 3rd capacitor C 3, the 4th capacitor C 4. Buffer circuit comprises the first inductance L 1, the second electricitySense L2, the 3rd inductance L 3, the 4th inductance L 4, the 5th capacitor C 5, the 6th capacitor C 6, the 7th capacitor C 7, the 8th electricityHold C8. Sheet is accepted network packet outward and is drawn together the 9th capacitor C 9, the tenth capacitor C 10, the 5th inductance L 5, the 6th inductance L 6, mouldIntend signal source Vin and the antenna internal resistance RS of antenna.
The negative terminal of the bottom crown of the 6th capacitor C 6 and the 3rd inductance L 3, the top crown of the 3rd capacitor C 3, the 3rd P type goldThe source electrode that belongs to oxide transistor M3 connects; The anode of the bottom crown of the 5th capacitor C 5 and the first inductance L 1, the first electricityHold the top crown of C1, the source electrode connection of the first N-type MOS transistor M1. The top crown of the 6th capacitor C 6 andThe top crown of the 5th capacitor C 5 connects, and as the anode Vinp of the input signal of low noise trsanscondutance amplifier. The 8th electricityHold the bottom crown of C8 and the anode of the second inductance L 2, the top crown of the second capacitor C 2, the second N-type metal oxide crystalline substanceThe source electrode of body pipe M2 connects. The negative terminal of the bottom crown of the 7th capacitor C 7 and the 4th inductance L 4, the upper utmost point of the 4th capacitor C 4The source electrode of plate, the 4th P type MOS transistor M4 connects. The top crown of the 8th capacitor C 8 and the 7th capacitor C 7Top crown connect, and as the negative terminal Vinn of the input signal of low noise trsanscondutance amplifier. The first N-type metal oxideThe anode of the grid of transistor M1 and the first resistance R 1, the bottom crown of the second capacitor C 2 are connected. The second N-type metal oxygenThe grid of compound transistor M2 is connected with the bottom crown of the anode of the second resistance R 2, the first capacitor C 1. The 3rd P type goldThe grid and the anode of the 3rd resistance R 3, the bottom crown of the 4th capacitor C 4 that belong to oxide transistor M3 are connected. The 4th PThe grid of type MOS transistor M4 is connected with the bottom crown of the anode of the 4th resistance R 4, the 3rd capacitor C 3. TheThe drain electrode of one N-type MOS transistor M1 is connected with the drain electrode of the 3rd P type MOS transistor M3, andAs the anode Vout+ of low noise trsanscondutance amplifier output signal. The drain electrode of the second N-type MOS transistor M2 andThe drain electrode of the 4th P type MOS transistor M4 connects, and as the output signal of low noise trsanscondutance amplifierNegative terminal Vout-. The negative terminal of the 4th resistance R 4 is connected with the negative terminal of the 3rd resistance R 3, and meets fixed voltage Vbias2,For the grid of the 4th P type MOS transistor M4 and the grid of the 3rd P type MOS transistor M3 provide straightStream biasing, in the present embodiment, Vbias2 value is 1.2V. The negative terminal of the negative terminal of the second resistance R 2 and the first resistance R 1 connectsConnecing, and meet fixed voltage Vbias1, is grid and the second N-type metal of the first N-type MOS transistor M1The grid of oxide transistor M2 provides direct current biasing, and in the present embodiment, Vbias1 value is 0.55V. The first inductance L 1Negative terminal and the negativing ending grounding of the second inductance L 2. The positive termination power electricity of the anode of the 3rd inductance L 3 and the 4th inductance L 4Press, in the present embodiment, this supply voltage value is 1.8V.
Sheet is accepted the signal source Vin of artificial antenna of network and antenna internal resistance RS outward and is arranged on low noise trsanscondutance amplifierInput, the output of the signal source Vin of artificial antenna is connected with one end of antenna internal resistance RS. The 6th inductance L 6 justThe top crown of end, the 9th capacitor C 9 is connected with the other end of antenna internal resistance RS. The bottom crown of the 9th capacitor C 9 and the 5thThe anode of inductance L 5 is connected to the anode Vinp of the input signal of described low noise trsanscondutance amplifier. Bearing of the 6th inductance L 6The top crown of end and the tenth capacitor C 10 is connected to the negative terminal Vinn of the input signal of described low noise trsanscondutance amplifier. The 5thThe negative terminal of inductance L 5 and, the bottom crown ground connection of the tenth capacitor C 10.
The noise cancellation low noise trsanscondutance amplifier of above-mentioned cross-couplings input, has offset cross-couplings input stage amplifierThe first N-type MOS transistor M1, the second N-type MOS transistor M2, the 3rd P type burningThing transistor M3 and the 4th P type MOS transistor M4 are at the noise of output, and employing cross-couplings is defeatedEnter, improved the actual mutual conductance of MOS transistor. Signal isolation network of the present invention comprise by the first inductance L 1,The second inductance L 2, the 3rd inductance L 3, the 4th inductance L 4, the first capacitor C 1, the second capacitor C 2, the 3rd capacitor C 3,The 4th capacitor C 4, the 5th capacitor C 5, the 6th capacitor C 6, the 7th capacitor C 7 and the 8th capacitor C 8, the first inductance L 1,The second inductance L 2, the 3rd inductance L 3 and the Main Function of the 4th inductance L 4 are that perfectly straight flow resistance exchanges. The first capacitor C 1,The second capacitor C 2, the 3rd capacitor C 3, the 4th capacitor C 4, the 5th capacitor C 5, the 6th capacitor C 6, the 7th capacitor C 7 andThe Main Function of the 8th capacitor C 8 is the logical interchanges of resistance direct current.
This low noise trsanscondutance amplifier utilizes the method for noise cancellation to greatly reduce the noise coefficient of circuit. Radiofrequency signalFlow through by the first N-type MOS transistor M1 and the 3rd P type MOS transistor M3 and the second N-type goldTwo branch roads that belong to oxide transistor M2 and the 4th P type MOS transistor M4 composition, produce at difference output endRaw opposite polarity signal; The first N-type MOS transistor M1, the second N-type MOS transistor M2,The noise current of the 3rd P type MOS transistor M3 and the 4th P type MOS transistor M4 is defeated in differenceGo out to hold the signal that polarization is identical. Can reach the object of noise cancellation by the signal subtraction of positive-negative output end, completeIn the situation of full coupling, can balance out the first N-type MOS transistor M1, the second N-type metal oxide completelyTransistor M2, the 3rd P type MOS transistor M3 and the 4th P type MOS transistor M4 produce at outputRaw noise.
Matching network of the present invention comprises the 5th inductance L 5, the 6th inductance L 6, the 9th capacitor C 9 and the tenth capacitor C 10.Of the present invention outer differential networks is L-type matching network. Input at low noise trsanscondutance amplifier arranges simulationThe signal source Vin of antenna and antenna internal resistance RS. The signal source Vin received RF signal of artificial antenna, then passes through sheetOuter matching network and the 5th capacitor C 5, the 6th capacitor C 6, the 7th capacitor C 7 and the 8th capacitor C 8 are ac-coupled toThe source of one N-type MOS transistor M1, source, the second N-type of the 3rd P type MOS transistor M3The source of the source electrode of MOS transistor M2 and the 4th P type MOS transistor M4. The first N-type metal oxygenThe source of compound transistor M1, the source of the 3rd P type MOS transistor M3, the second N-type metal oxide crystalline substanceThe grid of the grid of body pipe M2 and the 4th P type MOS transistor M4 by the 5th capacitor C 5, the 6th capacitor C 6,The 3rd capacitor C 3 and the first capacitor C 1 link together, as the anode of input signal. The first N-type metal oxide crystalline substanceThe grid end of body pipe M1, the grid end of the 3rd P type MOS transistor M3, the second N-type MOS transistor M2Source electrode and the source electrode of the 4th P type MOS transistor M4 by the 4th capacitor C 4, the second capacitor C 2, the 7th electricityHold C7 and the 8th capacitor C 8 and link together, as the negative terminal of input signal. Whole circuit has up and down symmetricalStructure. The grid of each MOS transistor is connected respectively different signal input parts with source electrode, has improved like thisThe actual mutual conductance of MOS transistor has improved gain in the situation that of same power consumption, has reduced making an uproar of circuit simultaneouslySonic system number.
The present invention taking the drain electrode of the first N-type MOS transistor M1 and the 3rd P type MOS transistor M3 asThe anode Vout+ of output; With the second N-type MOS transistor M2 and the 4th P type MOS transistorThe drain electrode of M4 is the negative terminal Vout-of output. The first N-type MOS transistor M1 and the 3rd P type burningThe drain electrode of thing transistor M3 and the second N-type MOS transistor M2 and the 4th P type MOS transistor M4Drain electrode there is larger input impedance, therefore can improve larger signal gain. For flowing through the first N-type metal oxygenThe noise current of compound transistor M1, one end of noise current is flow through by the 3rd inductance L 3, the first inductance L 1,The branch road of one N-type MOS transistor M1 and the 3rd P type MOS transistor M3 composition; Noise currentThe other end flows through by the second inductance L 2, the 4th inductance L 4, the second N-type MOS transistor M2 and the 4th P type goldBelong to the branch road of oxide transistor M4 composition. This noise current is at the anode Vout+ of output and the negative terminal of outputThe noise voltage that Vout-polarization is identical, is subtracted each other and can be eliminated the noise voltage that this noise current produces by both;Same reason can be offset respectively and flow through the second N-type MOS transistor M2, the 3rd P type metal oxide crystalThe noise current of pipe M3 and the 4th P type MOS transistor M4. In order to meet above-mentioned functions, require to arrange firstThe mutual conductance of N-type MOS transistor M1, the mutual conductance of the second N-type MOS transistor M2, the 3rd P type goldThe mutual conductance that belongs to oxide transistor M3 is identical with the mutual conductance of the 4th P type MOS transistor M4.
This low noise trsanscondutance amplifier adopts laterally zygomorphic cross-couplings input, the first N-type MOS transistorM1, the second N-type MOS transistor M2, the 3rd P type MOS transistor M3 and the 4th P type metal oxygenCompound transistor M4 is all cross-couplings input transistors. By offsetting the first N-type MOS transistor M1,Two N-type MOS transistor M2, the 3rd P type MOS transistor M3 and the 4th P type metal oxide crystalline substanceBody pipe M4, at the noise voltage of output generation, has reduced the noise coefficient of amplifier; Meanwhile, with the traditional coupling that intersectsClose structure and compare, the low noise trsanscondutance amplifier of this structure adopts two pairs of MOS transistors that mutually mate as defeatedEnter pipe. Meanwhile, the MOS transistor of every a pair of mutual coupling is again another metal oxide crystalline substance to mutual couplingThe load of body pipe, the 3rd P type MOS transistor M3 and the 4th P type MOS transistor M4 are in conductWhen cross-couplings input transistors, be also the first N-type MOS transistor M1 and the second N-type metal oxideThe load of transistor M2; Same, the first N-type MOS transistor M1 and the second N-type metal oxide crystalPipe M2 is also the 3rd P type MOS transistor M3 and the 4th P type in as cross-couplings input transistorsThe load of MOS transistor M4. Thereby, under the requirement of same gain and noise coefficient, of the present invention lowThe power consumption of noise trsanscondutance amplifier is the half of conventional cross coupling input structure. And due to the gold of every a pair of mutual couplingBelonging to oxide transistor is again the load of another MOS transistor to mutual coupling, does not adopt ohmic load, keeps awayExempt from circuit and in the time of larger bias current, on ohmic load, produced larger voltage drop.
Illustrate that below by simulation comparison the present invention has advantages of low-noise factor and low-power consumption.
AdoptVirtuoso simulation software carries out the simulation comparison of low noise trsanscondutance amplifier noise coefficient. RightComparison as if amplifier of the present invention and traditional common source low noise trsanscondutance amplifier.
As shown in Figure 3, abscissa represents the frequency of input radio frequency signal to simulation comparison result, the Hz of unit, and ordinate representsNoise coefficient, the dB of unit. As can be seen from Figure 3, low noise trsanscondutance amplifier of the present invention is operated near 433MHzTime, noise coefficient can reach 1.54dB. And near traditional cross-couplings input stage low noise trsanscondutance amplifier work this frequencyNoise coefficient while work is about 3.2dB. Low noise trsanscondutance amplifier of the present invention approaches 1.66dB to the optimization of noise coefficient.The bias current of this structure is only the half of traditional cross-couplings input stage low noise trsanscondutance amplifier. With there is identical increasingTraditional cross-couplings input stage low noise trsanscondutance amplifier of benefit is compared, and the present invention has lower power and noise systemNumber.
The above is only the preferred embodiment of the present invention, it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications are alsoShould be considered as protection scope of the present invention.
Claims (1)
1. a low noise trsanscondutance amplifier for cross-couplings input, is characterized in that: it is defeated that this amplifier comprises cross-couplingsEnter a grade amplifier, sheet and accept network and buffer circuit outward; Described cross-couplings input stage amplifier comprises the first N-type goldBelong to oxide transistor (M1), the second N-type MOS transistor (M2), the 3rd P type MOS transistor(M3), the 4th P type MOS transistor (M4), the first resistance (R1), the second resistance (R2), the 3rd resistance(R3), the 4th resistance (R4), the first electric capacity (C1), the second electric capacity (C2), the 3rd electric capacity (C3), the 4th electric capacity(C4); Described buffer circuit comprises the first inductance (L1), the second inductance (L2), the 3rd inductance (L3), the 4th inductance(L4), the 5th electric capacity (C5), the 6th electric capacity (C6), the 7th electric capacity (C7), the 8th electric capacity (C8); Outside describedAccept network and comprise the 9th electric capacity (C9), the tenth electric capacity (C10), the 5th inductance (L5), the 6th inductance (L6), mouldIntend signal source (Vin) and the antenna internal resistance (RS) of antenna;
The negative terminal of the bottom crown of described the 6th electric capacity (C6) and the 3rd inductance (L3), the top crown of the 3rd electric capacity (C3),The source electrode of the 3rd P type MOS transistor (M3) connects; The bottom crown of the 5th electric capacity (C5) and the first inductance (L1)The top crown, the source electrode of the first N-type MOS transistor (M1) of anode, the first electric capacity (C1) connect; TheThe top crown of six electric capacity (C6) is connected with the top crown of the 5th electric capacity (C5), and defeated as low noise trsanscondutance amplifierEnter the anode (Vinp) of signal; The anode of the bottom crown of the 8th electric capacity (C8) and the second inductance (L2), the second electric capacity(C2) top crown, the source electrode of the second N-type MOS transistor (M2) connect; Under the 7th electric capacity (C7)The negative terminal of pole plate and the 4th inductance (L4), the top crown of the 4th electric capacity (C4), the 4th P type MOS transistor(M4) source electrode connects; The top crown of the 8th electric capacity (C8) is connected with the top crown of the 7th electric capacity (C7), and conductThe negative terminal (Vinn) of the input signal of low noise trsanscondutance amplifier; The grid of the first N-type MOS transistor (M1)The anode of the utmost point and the first resistance (R1), the bottom crown of the second electric capacity (C2) are connected; The second N-type metal oxide crystalThe bottom crown of the pipe grid of (M2) and the anode of the second resistance (R2), the first electric capacity (C1) is connected; The 3rd P type goldThe grid and the anode of the 3rd resistance (R3), the bottom crown of the 4th electric capacity (C4) that belong to oxide transistor (M3) are connected;The anode of the grid of the 4th P type MOS transistor (M4) and the 4th resistance (R4), the 3rd electric capacity (C3)Bottom crown connects; The drain electrode of the first N-type MOS transistor (M1) and the 3rd P type MOS transistor (M3)Drain electrode connect, and as the anode (Vout+) of low noise trsanscondutance amplifier output signal; The second N-type burningThe drain electrode of thing transistor (M2) is connected with the drain electrode of the 4th P type MOS transistor (M4), and as low noiseThe negative terminal (Vout-) of the output signal of sound trsanscondutance amplifier; The negative terminal of the 4th resistance (R4) and the 3rd resistance (R3)Negative terminal connects, and meets fixed voltage Vbias2, is the grid and the 3rd of the 4th P type MOS transistor (M4)The grid of P type MOS transistor (M3) provides direct current biasing; The negative terminal of the second resistance (R2) and the first resistance(R1) negative terminal connects, and meets fixed voltage Vbias1, is the grid of the first N-type MOS transistor (M1)The grid of the utmost point and the second N-type MOS transistor (M2) provides direct current biasing; The negative terminal of the first inductance (L1) andThe negativing ending grounding of the second inductance (L2); The positive termination power electricity of the anode of the 3rd inductance (L3) and the 4th inductance (L4)Press;
Described signal source (Vin) of accepting the artificial antenna of network outward and antenna internal resistance (RS) be arranged on low noise acrossLead the input of amplifier, the output of the signal source (Vin) of artificial antenna is connected with one end of antenna internal resistance (RS);The anode of the 6th inductance (L6), the top crown of the 9th electric capacity (C9) are connected with the other end of antenna internal resistance (RS); TheThe anode of the bottom crown of nine electric capacity (C9) and the 5th inductance (L5) is connected to the input letter of described low noise trsanscondutance amplifierNumber anode (Vinp); The top crown of the negative terminal of the 6th inductance (L6) and the tenth electric capacity (C10) is connected to described low noiseThe negative terminal (Vinn) of the input signal of sound trsanscondutance amplifier; The negative terminal of the 5th inductance (L5) and, the tenth electric capacity (C10)Bottom crown ground connection.
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| CN104467714B (en) * | 2014-10-17 | 2017-09-29 | 中国科学院微电子研究所 | Operational amplifier circuit, operational amplifier and envelope following power supply |
| CN106817085A (en) * | 2017-01-19 | 2017-06-09 | 中国科学院上海高等研究院 | A kind of radio frequency low-noise amplifier and its implementation |
| CN107493077A (en) * | 2017-09-01 | 2017-12-19 | 无锡泽太微电子有限公司 | A kind of wideband low noise amplifier circuit of Low-voltage Low-power |
| CN110785925B (en) * | 2019-09-26 | 2023-09-26 | 深圳市汇顶科技股份有限公司 | Transconductance amplifier and chip |
| CN112491371B (en) * | 2020-11-26 | 2024-03-22 | 北京百瑞互联技术股份有限公司 | High-linearity programmable AB-C class mixed transconductance low-noise transconductance amplifier |
| CN112671350B (en) * | 2020-12-28 | 2022-01-04 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
| CN113647958B (en) * | 2021-07-20 | 2023-08-29 | 广州大学 | ECG signal detection circuit suitable for wearable equipment |
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| CN101483409A (en) * | 2008-01-11 | 2009-07-15 | 上海锐协微电子科技有限公司 | Low noise amplifier using multipath noise counteraction |
| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
| CN103219951A (en) * | 2013-03-22 | 2013-07-24 | 中国科学技术大学 | Low-power consumption and low-noise amplifier adopting noise cancellation technology |
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| US7596364B2 (en) * | 2006-12-08 | 2009-09-29 | Telefonaktiebolaget L M Ericsson (Publ) | Merged low-noise amplifier and balun |
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| CN101483409A (en) * | 2008-01-11 | 2009-07-15 | 上海锐协微电子科技有限公司 | Low noise amplifier using multipath noise counteraction |
| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
| CN103219951A (en) * | 2013-03-22 | 2013-07-24 | 中国科学技术大学 | Low-power consumption and low-noise amplifier adopting noise cancellation technology |
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