CN103219951A - Low-power consumption and low-noise amplifier adopting noise cancellation technology - Google Patents
Low-power consumption and low-noise amplifier adopting noise cancellation technology Download PDFInfo
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Abstract
The invention provides a low-power consumption and low-noise amplifier adopting a noise cancellation technology. The amplifier comprises a balanced-unbalanced transformer (1), a capacitance cross coupling common-gate amplification stage (2), a feedforward noise cancellation stage (3), a main common-gate amplification stage (4) and a load impedance (5). A mode of cascading the capacitance cross coupling common-gate amplification stage with the main common-gate amplification stage is adopted to enhance transconductance twice, and the higher equivalent transconductance is realized through low power consumption; the noise contribution of the capacitance cross coupling common-gate amplification stage can be reduced through the feedforward noise cancellation stage; and the noise contribution of the main common-gate amplification stage can be inhibited through the gains provided by the capacitance cross coupling common-gate amplification stage and the feedforward noise cancellation stage. The twice transconductance enhancement and a feedforward noise cancellation technology are combined together so as to realize low noise factor and low power consumption.
Description
Technical field
The present invention relates to a kind of low-power consumption low noise amplifier that adopts noise cancellation technique, have the low-noise factor low in power consumption, belong to technical field of radio frequency integrated circuits.
Background technology
Low noise amplifier is the key modules of receiver in the wireless transmitting system, and it generally links to each other with antenna, amplifies the small-signal that receives, and reduces the deterioration to signal as far as possible.Port match, gain, noise factor, the power consumption and the linearity are the important technological parameters of low noise amplifier.
Traditional low noise amplifier adopts source class inductive feedback technology, can provide arrowband input coupling and lower noise factor, but this structure needs on-chip inductor, and is not suitable for broadband system.Adopt the low noise amplifier of noise cancellation technique can realize lower noise factor, but power consumption is bigger in the broadband.Adopt the low noise amplifier of common gate structure to have the characteristic of broadband input coupling and lower power consumption, but noise factor is bigger.
Fig. 1 has adopted differential capacitance cross-couplings technology for the common gate structure low noise amplifier after improving.Improved common gate structure low noise amplifier is made up of the common grid amplifying stage (2) and the load stage (3) of balance/unbalance transformer (1), capacitive cross coupling.Balance/unbalance transformer (1) is converted into single-ended signal differential signal and provides the source class direct current biasing for NM1 and NM2.The common grid amplifying stage (2) of capacitive cross coupling is by grid amplifier tube NM1 and NM2 form altogether, cross-linked capacitor C 1 is coupled to relative transistorized grid with C2 with differential input signal, make that signal voltage doubles between the grid source that is total to grid amplifier tube NM1 and NM2, thereby increase the equivalent transconductance of grid amplifier tube altogether, reduced noise factor and power consumption.Load stage (3) is by electric capacity, resistance, one or more compositions in the passive devices such as inductance.Only consider the noise contribution of grid amplifier tube altogether, under the hypothesis that input impedance and source impedance are mated fully, the noise factor of this circuit is:
F=1+γ/2 (1)
In order further to reduce power consumption, can adopt secondary mutual conductance enhancement techniques, i.e. cascade one-level master cathode-input amplifier after capacitive cross coupling cathode-input amplifier, the source class of main cathode-input amplifier links to each other with input differential signal, as shown in Figure 2, list of references [1] (F.Belmas, F.Hameau, and J.-M.Fournier, " A Low Power Inductorless LNA with Double Gm Enhancement in 130nm CMOS, " IEEE J.Solid-State Circuits, vol.47, no.5, pp.1094 – 1103, May.2012.).Such structure can realize bigger equivalent transconductance with very little power consumption, and input coupling preferably and higher gain are provided.Such structure can suppress the main noise contribution of grid amplifier tube altogether, but the noise suppressed of grid amplifier tube is not enough altogether for the cross capacitance coupling, makes that the noise factor of entire circuit is higher.
Summary of the invention
Technology of the present invention is dealt with problems: overcome the deficiencies in the prior art, a kind of low-power consumption low noise amplifier that adopts noise cancellation technique is provided, combination by enhancing of mutual conductance secondary and feed-forward noise cancellation technology, realize low-noise factor and low-power consumption, solved the existing low-power consumption noise factor problem of higher of grid low noise amplifier altogether.
The invention provides following technical scheme: a kind of low-power consumption low noise amplifier that adopts noise cancellation technique comprises that balance/unbalance transformer 1, the common grid amplifying stage 2 of capacitive cross coupling, feed-forward noise cancellation stage 3, master are total to grid amplifying stage 4 and load impedance 5.The common grid amplifying stage 2 of capacitive cross coupling and main grid amplifying stage 4 cascades altogether; The common grid amplifying stage 2 of two balance outputs of balance/unbalance transformer 1 and capacitive cross coupling and the main input of grid amplifying stage 4 altogether directly are coupled, two balance outputs that are balance/unbalance transformer 1 link to each other with the source class of two-stage cathode-input amplifier, and 1 two balance outputs of balance/unbalance transformer are connected by capacitive coupling with the grid end of feed-forward noise cancellation stage 3 simultaneously; The drain terminal of feed-forward noise cancellation stage 3 is connected to the drain terminal of the common grid amplifying stage 2 of capacitive cross coupling, and is connected to the main grid of grid amplifying stage 4 altogether by capacitive coupling; Load impedance 5 joins with the main drain electrode of grid amplifying stage 4 altogether; Feed-forward noise cancellation stage 3 is stacked on the common grid amplifying stage 2 of capacitive cross coupling as load transistor, and the common DC electric current can reduce power consumption; And feed-forward noise cancellation stage 3 can reduce common grid amplifier tube NM1 and the NM2 noise contribution at difference output end Vo for the common grid amplifying stage 2 of capacitive cross coupling provides extra noise cancellation path;
The common grid amplifying stage 2 of capacitive cross coupling adopts two identical N transistor npn npn NM1 and NM2 as the input amplifier tube, the grid end of NM1 and NM2 is received bias voltage vb1 by big resistance R 1 and R2 respectively, the two ends of capacitor C 1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of capacitor C 2 connect the source class of NM2 and the grid of NM1 respectively;
Main two identical N transistor npn npn NM3 of grid amplifying stage 4 usefulness altogether and NM4 are as the input amplifier tube, and the grid end of NM1 and NM2 is received bias voltage vb2 by big resistance R 3 and R4 respectively;
The single-ended input 1 of balance/unbalance transformer 1 is connected to signal source, and balance output 2 is directly coupled to the source class of NM1 and the source class of NM4, and balance output 3 is directly coupled to the source class of NM2 and the source class of NM3, the 4th end and the 5th end ground connection;
Feed-forward noise cancellation stage 3) forms by two identical P transistor npn npn PM1 and PM2, the source class of PM1 and PM2 is received power supply, the drain electrode of PM1 links to each other with the drain electrode of NM1 and is coupled to NM3 by capacitor C 5, the drain electrode of PM2 links to each other with the drain electrode of NM2 and is coupled to NM4 by capacitor C 6, and the grid of PM1 and PM2 is received bias voltage vb3 by big resistance R 5 and R6 respectively; The common grid amplifying stage 2 of capacitive cross coupling and feed-forward noise cancellation stage 3 are by capacitive coupling, and the two ends of C4 are received the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 are received the source class of NM2 and the grid of PM1 respectively;
The present invention's advantage compared with prior art is:
(1) the common grid amplifying stage of the coupling of the capacitive cross among the present invention and main grid amplifying stage cascade altogether, two balance outputs of balance/unbalance transformer link to each other with the source class of two-stage cathode-input amplifier respectively, this connected mode can be carried out secondary to mutual conductance and be strengthened, realize bigger equivalent transconductance with low-power consumption, reduced circuit power consumption;
(2) feed-forward noise cancellation stage of the present invention can reduce common grid amplifier tube NM1 and the NM2 noise contribution at difference output end Vo for the common grid amplifying stage of capacitive cross coupling provides extra noise cancellation path;
(3) feed-forward noise cancellation stage of the present invention is stacked on the common grid amplifying stage of capacitive cross coupling, and PM1 and PM2 be simultaneously as load transistor, feed-forward noise cancellation stage and cross-linked grid amplifying stage common DC electric current altogether, the power consumption that reduced power consumption;
(4) feed-forward noise cancellation stage of the present invention realizes with P transistor npn npn PM1 and PM2, be stacked on the N transistor npn npn NM1 and NM2 of common grid amplifying stage of capacitive cross coupling, such connected mode required voltage nargin is less, can adopt low voltage power supply, has reduced power consumption;
(5) feed-forward noise cancellation stage of the present invention realizes with P transistor npn npn PM1 and PM2, therefore the output impedance of the common grid amplifying stage of capacitive cross coupling is transistorized drain terminal impedance parallel connection, the high-gain of the common grid amplifying stage of capacitive cross coupling helps to suppress the noise contribution of main cathode-input amplifier, also helps the high-gain of whole low noise amplifier;
Description of drawings
Fig. 1 is the cross-linked grid low noise amplifier altogether of available technology adopting differential capacitance;
Fig. 2 is the common grid low noise amplifier of available technology adopting secondary mutual conductance enhancement techniques;
Fig. 3 is the low-power consumption low noise amplifier structural representation of employing noise cancellation technique provided by the invention;
Fig. 4 is the schematic diagram that the balance/unbalance transformer is offset noise;
Fig. 5 is the schematic diagram that noise is offset in the capacitive cross coupling;
Fig. 6 is the schematic diagram that main grid amplifying stage is altogether offset noise;
Fig. 7 is the schematic diagram that the feed-forward noise cancellation stage is offset noise.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
The specific embodiment of the present invention provides a kind of low-power consumption low noise amplifier that adopts noise cancellation technique, as shown in Figure 3, the common grid amplifying stage 2, feed-forward noise cancellation stage 3, main grid amplifying stage 4 and the load impedance 5 altogether that comprise balance/unbalance transformer 1, capacitive cross coupling.
Two identical N transistor npn npn NM1 of common grid amplifying stage 2 usefulness of capacitive cross coupling and NM2 are as the input amplifier tube, the grid end of NM1 and NM2 is received bias voltage vb1 by big resistance R 1 and R2 respectively, the two ends of capacitor C 1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of capacitor C 2 connect the source class of NM2 and the grid of NM1 respectively;
Main two identical N transistor npn npn NM3 of grid amplifying stage 4 usefulness altogether and NM4 are as the input amplifier tube, and the grid end of NM1 and NM2 is received bias voltage vb2 by big resistance R 3 and R4 respectively;
The single-ended input 1 of balance/unbalance transformer 1 is connected to signal source, and balance output 2 is directly coupled to the source class of NM1 and the source class of NM4, and balance output 3 is directly coupled to the source class of NM2 and the source class of NM3, the 4th end and the 5th end ground connection;
Feed-forward noise cancellation stage 3 is made up of two identical P transistor npn npn PM1 and PM2, the source class of PM1 and PM2 is received power supply, the drain electrode of PM1 links to each other with the drain electrode of NM1 and is coupled to NM3 by capacitor C 5, the drain electrode of PM2 links to each other with the drain electrode of NM2 and is coupled to NM4 by capacitor C 6, and the grid of PM1 and PM2 is received bias voltage vb3 by big resistance R 5 and R6 respectively;
The common grid amplifying stage 2 of capacitive cross coupling and feed-forward noise cancellation stage 3 are by capacitive coupling, and the two ends of C4 are received the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 are received the source class of NM2 and the grid of PM1 respectively;
The main noise source of cathode-input amplifier is the raceway groove thermal noise of common grid amplifier transistor, can equivalence be a noise current that flows to source class from transistor drain.Raceway groove thermal noise with NM1 is an example, and noise current flows to source class from the drain electrode of NM1, at the noise voltage of a positive of NM1 source class generation, produces an anti-phase noise voltage in the NM1 drain electrode, further produces the noise voltage of a homophase in the drain electrode of NM3.Except the balance/unbalance transformer, capacitive cross coupling and main three noise cancellation paths of grid amplifying stage altogether, the present invention has designed extra noise forward path, and at the relevant homophase noise voltage of drain terminal generation of NM4, thereby difference output end Vo can offset most NM1 noise contribution.
Four noise cancellation paths that the present invention adopts, its principle is as follows:
1, balance/unbalance transformer
The principle of balance/unbalance transformer counteracting noise as shown in Figure 4.The source class noise voltage of transistor NM1 can be coupled to the source class of transistor NM2, because the intercoupling effect of desirable balance balun transformer, the noise voltage of the source class generation of NM2 is identical with the noise voltage amplitude of NM1 source class and phase place is opposite.The source class noise voltage of NM2 is amplified to the drain terminal of NM2 through the common grid of NM2, and NM2 leaks the noise voltage and the noise voltage homophase of NM2 source class of level, also the noise voltage homophase that drains with NM1.The drain electrode that is amplified to NM4 that the noise voltage of NM2 drain electrode is coupled to grid and the process NM4 of NM4 through capacitor C 6, the noise voltage of generation and NM2 drain electrode noise voltage are anti-phase, with NM3 drain electrode noise voltage homophase.Difference output end can be offset the common-mode noise of a part like this, has reduced the noise factor of circuit.
2, capacitive cross coupling
The principle of capacitive cross coupled structure counteracting noise as shown in Figure 5.The source class noise voltage of transistor NM1 is coupled to the grid of NM2 by capacitor C 1, and NM2 grid noise voltage is identical with NM1 source class noise voltage amplitude same phase.NM2 grid noise voltage is amplified to the drain electrode of NM2 by the common source of NM2, and the drain electrode noise voltage of NM2 and NM2 grid noise voltage inversion are with NM1 drain electrode noise voltage homophase.The drain electrode that is amplified to NM4 that the noise voltage of NM2 drain electrode is coupled to grid and the process NM4 of NM4 through capacitor C 6, the noise voltage of generation and NM2 drain electrode noise voltage are anti-phase, with NM3 drain electrode noise voltage homophase.Therefore, difference output end can be offset the common-mode noise of a part, has reduced the noise factor of circuit.
3, main grid amplifying stage altogether
The principle of the main counteracting of grid amplifying stage altogether noise as shown in Figure 6.The source class noise voltage of transistor NM1 is directly coupled to the source class of NM4, and NM4 source electrode noise voltage is total to the drain electrode that grid are amplified to NM4 by NM4, and the noise voltage of generation and NM4 source electrode noise voltage homophase are with NM3 drain electrode noise voltage homophase.Therefore, difference output end can be offset the common-mode noise of a part, has reduced the noise factor of circuit.
4, feed-forward noise cancellation stage
The principle of feed-forward noise cancellation stage counteracting noise as shown in Figure 7.The source class noise voltage of transistor NM1 is coupled to the grid of PM2 by capacitor C 4, and PM2 grid noise voltage is identical with NM1 source class noise voltage amplitude same phase.PM2 grid noise voltage is amplified to the drain electrode (being the drain electrode of NM2) of PM2 by the common source of PM2, and the drain electrode noise voltage of NM2 and PM2 grid noise voltage inversion are with NM1 drain electrode noise voltage homophase.The drain electrode that is amplified to NM4 that the noise voltage of NM2 drain electrode is coupled to grid and the process NM4 of NM4 through capacitor C 6, the noise voltage of generation and NM2 drain electrode noise voltage are anti-phase, with NM3 drain electrode noise voltage homophase.Therefore, difference output end can be offset the common-mode noise of a part, has reduced the noise factor of circuit.
Under the effect in above-mentioned four noise cancellation paths, produced the noise voltage of the leakage level homophase of one and NM3 in the drain electrode of NM4.Extra noise cancellation path makes difference output end can offset the more noise of multiple transistor NM1.Because the symmetry of fully differential circuit, difference output end can be offset the noise of more transistor NM2 equally.
The capacitive cross coupling is total to the grid amplifying stage and the feed-forward noise amplifying stage provides certain gain before the grid amplifying stage altogether main, can suppress main grid amplifier tube NM3 altogether like this, the noise contribution of NM4.Like this, four are total to the grid amplifier tube, NM1, and NM2, NM3, the noise contribution of NM4 has all obtained inhibition, and the noise factor of entire circuit has reduced.
The present invention makes that by the design in additional noise counteracting path the noise of grid amplifier tube is cancelled at difference output end altogether, has reduced the noise factor of circuit.
The technical scheme that adopts the specific embodiment of the invention to provide, can realize following technique effect:
1, the present invention carries out the secondary enhancing with the two-stage cathode-input amplifier to mutual conductance, realizes bigger equivalent transconductance with low-power consumption, has reduced circuit power consumption;
2, feed-forward noise cancellation stage of the present invention can reduce common grid amplifier tube NM1 and the NM2 noise contribution at difference output end Vo for the common grid amplifying stage of capacitive cross coupling provides extra noise cancellation path;
3, feed-forward noise cancellation stage of the present invention is stacked on the common grid amplifying stage of capacitive cross coupling, and PM1 and PM2 be simultaneously as load transistor, feed-forward noise cancellation stage and cross-linked grid amplifying stage common DC electric current altogether, the power consumption that reduced power consumption;
4, feed-forward noise cancellation stage of the present invention realizes with P transistor npn npn PM1 and PM2, be stacked on the N transistor npn npn NM1 and NM2 of common grid amplifying stage of capacitive cross coupling, such connected mode required voltage nargin is less, can adopt low voltage power supply, has reduced power consumption;
5, feed-forward noise cancellation stage of the present invention realizes with P transistor npn npn PM1 and PM2, therefore the output impedance of the common grid amplifying stage of capacitive cross coupling is transistorized drain terminal impedance parallel connection, the high-gain of the common grid amplifying stage of capacitive cross coupling helps to suppress the noise contribution of main cathode-input amplifier, also helps the high-gain of whole low noise amplifier.
In a word, the present invention adopts the common grid amplifying stage and the main mode of grid amplifying stage cascade altogether of capacitive cross coupling, and the secondary enhancing has been carried out in mutual conductance, realizes higher equivalent transconductance with low-power consumption; The feed-forward noise cancellation stage can reduce the noise contribution of the common grid amplifying stage of capacitive cross coupling; The gain that the common grid amplifying stage of capacitive cross coupling and feed-forward noise cancellation stage provide can suppress the main noise contribution of grid amplifying stage altogether.The present invention has realized low-noise factor and low-power consumption by the combination of enhancing of mutual conductance secondary and feed-forward noise cancellation technology.
The non-elaborated part of the present invention belongs to techniques well known.
The above; only be the preferable embodiment of the present invention; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the embodiment of the invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (1)
1. a low-power consumption low noise amplifier that adopts noise cancellation technique is characterized in that: the common grid amplifying stage (2), feed-forward noise cancellation stage (3), main grid amplifying stage (4) and the load impedance (5) altogether that comprise balance/unbalance transformer (1), capacitive cross coupling; The common grid amplifying stage (2) of capacitive cross coupling and main grid amplifying stage (4) cascade altogether; The common grid amplifying stage (2) of two balance outputs of balance/unbalance transformer (1) and capacitive cross coupling and the input of main common grid amplifying stage (4) directly are coupled, two balance outputs that are balance/unbalance transformer (1) link to each other with the source class of two-stage cathode-input amplifier, and (1) two balance output of balance/unbalance transformer is connected by capacitive coupling with the grid end of feed-forward noise cancellation stage (3) simultaneously; The drain terminal of feed-forward noise cancellation stage (3) is connected to the drain terminal of the common grid amplifying stage (2) of capacitive cross coupling, and is connected to the main grid of grid amplifying stage (4) altogether by capacitive coupling; Load impedance (5) joins with the main drain electrode of grid amplifying stage (4) altogether;
The common grid amplifying stage (2) of capacitive cross coupling adopts two identical N transistor npn npn NM1 and NM2 as the input amplifier tube, the grid end of NM1 and NM2 is received bias voltage vb1 by big resistance R 1 and R2 respectively, the two ends of capacitor C 1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of capacitor C 2 connect the source class of NM2 and the grid of NM1 respectively;
As importing amplifier tube, the grid end of NM1 and NM2 is received bias voltage vb2 by big resistance R 3 and R4 respectively to main grid amplifying stage (4) altogether with two identical N transistor npn npn NM3 and NM4;
The single-ended input 1 of balance/unbalance transformer (1) is connected to signal source, and balance output 2 is directly coupled to the source class of NM1 and the source class of NM4, and balance output 3 is directly coupled to the source class of NM2 and the source class of NM3, the 4th end and the 5th end ground connection;
Feed-forward noise cancellation stage (3) is made up of two identical P transistor npn npn PM1 and PM2, the source class of PM1 and PM2 is received power supply, the drain electrode of PM1 links to each other with the drain electrode of NM1 and is coupled to NM3 by capacitor C 5, the drain electrode of PM2 links to each other with the drain electrode of NM2 and is coupled to NM4 by capacitor C 6, and the grid of PM1 and PM2 is received bias voltage vb3 by big resistance R 5 and R6 respectively;
The common grid amplifying stage (2) of capacitive cross coupling and feed-forward noise cancellation stage (3) are by capacitive coupling, and the two ends of C4 are received the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 are received the source class of NM2 and the grid of PM1 respectively;
Load impedance (5) is made up of impedance Z 1 and Z2, by resistance, and inductance, one or several in the electric capacity passive device combine, and the drain electrode of power supply and NM3 is received at the two ends of Z1 respectively, and the drain electrode of power supply and NM4 is received at the two ends of Z2 respectively.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762947A (en) * | 2014-01-13 | 2014-04-30 | 东南大学 | Cross-coupling input low-noise trans-conductance amplifier |
| CN104065346A (en) * | 2014-06-25 | 2014-09-24 | 中国电子科技集团公司第三十八研究所 | Broadband low noise amplifier circuit based on cross-coupled feedback |
| CN104167993A (en) * | 2014-08-28 | 2014-11-26 | 中国科学技术大学 | Differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted |
| CN104270100A (en) * | 2014-08-28 | 2015-01-07 | 中国科学技术大学 | Low-power low-noise amplifier utilizing positive feedback technique and active transconductance enhancement technique |
| CN104883136A (en) * | 2015-05-05 | 2015-09-02 | 电子科技大学 | Negative resistance single-end CMOS (commentary metal oxide semiconductor) low-nose amplifier |
| CN107148749A (en) * | 2014-10-29 | 2017-09-08 | 高通股份有限公司 | Transformer feedback amplifier |
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| CN109546969A (en) * | 2018-10-29 | 2019-03-29 | 电子科技大学 | Distort CMOS low-noise amplifier after one kind |
| CN109560775A (en) * | 2017-09-27 | 2019-04-02 | 深圳市中兴微电子技术有限公司 | A kind of amplifier circuit in low noise |
| CN111478671A (en) * | 2020-04-13 | 2020-07-31 | 电子科技大学 | Novel low-noise amplifier applied to Sub-GHz frequency band |
| CN111504347A (en) * | 2020-04-28 | 2020-08-07 | 中国电子科技集团公司第二十八研究所 | Low-noise signal detection system |
| CN114665826A (en) * | 2022-05-23 | 2022-06-24 | 苏州瀚宸科技有限公司 | Non-fully differential circuit system for improving power supply voltage rejection ratio |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101110573A (en) * | 2007-06-28 | 2008-01-23 | 复旦大学 | Ultra-broadband low-noise amplifier circuit adopting noise cancellation technology |
| CN101951230A (en) * | 2010-09-03 | 2011-01-19 | 华东师范大学 | Broadband low noise amplifier |
| KR101105379B1 (en) * | 2010-08-17 | 2012-01-16 | 한국과학기술원 | Low noise amplifier and radio receiver |
| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
| CN102801389A (en) * | 2012-08-30 | 2012-11-28 | 东南大学 | Ultra-low power consumption low-noise amplifier |
-
2013
- 2013-03-22 CN CN201310095232.5A patent/CN103219951B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101110573A (en) * | 2007-06-28 | 2008-01-23 | 复旦大学 | Ultra-broadband low-noise amplifier circuit adopting noise cancellation technology |
| KR101105379B1 (en) * | 2010-08-17 | 2012-01-16 | 한국과학기술원 | Low noise amplifier and radio receiver |
| CN101951230A (en) * | 2010-09-03 | 2011-01-19 | 华东师范大学 | Broadband low noise amplifier |
| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
| CN102801389A (en) * | 2012-08-30 | 2012-11-28 | 东南大学 | Ultra-low power consumption low-noise amplifier |
Non-Patent Citations (3)
| Title |
|---|
| HAN WANG等: "Design of UWB Circuits with Inductive Peaking Technique", 《MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT), 2012 INTERNATIONAL CONFERENCE ON》 * |
| 刘华珠等: "基于噪声相消和线性度提高的低噪声放大器", 《华中科技大学学报（自然科学版）》 * |
| 唐学锋等: "基于噪声抵消技术的宽带低噪声放大器设计", 《微电子学与计算机》 * |
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| CN103762947B (en) * | 2014-01-13 | 2016-05-18 | 东南大学 | A kind of low noise trsanscondutance amplifier of cross-couplings input |
| CN104065346A (en) * | 2014-06-25 | 2014-09-24 | 中国电子科技集团公司第三十八研究所 | Broadband low noise amplifier circuit based on cross-coupled feedback |
| CN104065346B (en) * | 2014-06-25 | 2017-04-12 | 中国电子科技集团公司第三十八研究所 | Broadband low noise amplifier circuit based on cross-coupled feedback |
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| CN107592086B (en) * | 2017-07-26 | 2020-05-19 | 湖北大学 | High-gain ultrahigh-working-rate amplifier circuit |
| CN109560775B (en) * | 2017-09-27 | 2023-04-14 | 深圳市中兴微电子技术有限公司 | Low-noise amplifier circuit |
| CN109560775A (en) * | 2017-09-27 | 2019-04-02 | 深圳市中兴微电子技术有限公司 | A kind of amplifier circuit in low noise |
| CN109546969A (en) * | 2018-10-29 | 2019-03-29 | 电子科技大学 | Distort CMOS low-noise amplifier after one kind |
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| CN111504347A (en) * | 2020-04-28 | 2020-08-07 | 中国电子科技集团公司第二十八研究所 | Low-noise signal detection system |
| CN111504347B (en) * | 2020-04-28 | 2021-12-17 | 中国电子科技集团公司第二十八研究所 | Low-noise signal detection system |
| CN114665826A (en) * | 2022-05-23 | 2022-06-24 | 苏州瀚宸科技有限公司 | Non-fully differential circuit system for improving power supply voltage rejection ratio |
| CN114665826B (en) * | 2022-05-23 | 2022-10-04 | 苏州瀚宸科技有限公司 | Non-fully differential circuit system for improving power supply voltage rejection ratio |
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