CN101807884A - Feed-forward noise cancellation resistance negative feedback broadband low noise amplifier - Google Patents
Feed-forward noise cancellation resistance negative feedback broadband low noise amplifier Download PDFInfo
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- CN101807884A CN101807884A CN 201010162479 CN201010162479A CN101807884A CN 101807884 A CN101807884 A CN 101807884A CN 201010162479 CN201010162479 CN 201010162479 CN 201010162479 A CN201010162479 A CN 201010162479A CN 101807884 A CN101807884 A CN 101807884A
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Abstract
The invention belongs to the technical field of integrated circuit design, and in particular relates to a broadband low noise amplifier improved by using a feed-forward noise cancellation technique. In a circuit structure, a parallel negative feedback technique and the noise cancellation technique are combined, and a signal and noise voltage amplifying channel is added based on a conventional resistance negative feedback low noise amplifier to counteract node noise voltage in the circuit, increase the signal voltage, reduce output noise current, reduce final output noise circuit and reduce the noise coefficient of the lower noise amplifier so as to enhance the sensitivity performance of a receiver. The low noise amplifier realizes a resistance negative feedback broadband low noise amplifier circuit structure.
Description
Technical field
The invention belongs to the integrated circuit (IC) design technical field.Relate to the wideband low noise amplifier in a kind of wireless communication system receiver particularly.
Background technology
In the occasion of amplifying small-signal, the noise of amplifier self may be very serious to the interference of signal, therefore wishes to reduce this noise, to improve the signal to noise ratio of output.For nearly all radio-frequency transmitter system, an all requisite module is exactly a low noise amplifier.The main purposes of low noise amplifier is: 1, the radiofrequency signal amplitude that receives of system is very weak usually, need amplify earlier and could correctly handle at receiving front-end; 2, adopt an amplifier can effectively alleviate noiseproof feature requirement at receiver front end, reduce back level modular design difficulty back level module.Low noise amplifier has different designing requirements in different systems, according to the difference of applying frequency, can be divided into narrow-band low-noise amplifier usually, is with three types of low noise amplifier and wideband low noise amplifiers more.The LNA of which kind of type no matter, its main performance index all comprises impedance matching, noise factor (NF, Noise Figure), the linearity (IIP3, IIP2,1dB compression point), power consumption etc.Fig. 1 has illustrated the role of low noise amplifier 2 in the radio communication receiving system, it is the bridge between connecting band bandpass filter 1 and the down-conversion mixer 3, band pass filter 1 selects suitable frequency band signal afterwards through after the amplification of low noise amplifier amplifier, enters frequency mixer and downconverts to intermediate frequency.Low noise amplifier (2) can reduce the noise contribution of late-class circuit, reduces the noise factor of receiver system, improves signal to noise ratio and sensitivity.
The noiseproof feature and the power consumption of narrow-band low-noise amplifier are better than wideband low noise amplifier, but can only be at the application of special frequency band, for the increasing multimode rake receiver of current needs, need a plurality of narrow-band low-noise amplifiers, the chip area of consumption is big.And the progress of CMOS technology makes the design of wideband low noise amplifier can satisfy the reception of all signals in the ultra wide band range, be suitable for the application of multimode transceiver and software radio, but than narrow-band low-noise amplifier, the noiseproof feature of traditional wideband low noise amplifier can not show a candle to narrow-band low-noise amplifier.The present invention has proposed a kind of circuit structure of wideband low noise amplifier in conjunction with noise cancellation and resistive degeneration technology, has realized the low noise amplifier of low-noise performance under the low-power consumption.
Summary of the invention
The objective of the invention is to propose a kind of circuit structure of Wideband low noise amplifier.It can reduce the noise factor of wideband low noise amplifier, improves gain and linearity performance.
Low noise amplifier proposed by the invention has comprised signal source (1), genertor impedance (3), forward gain level G (2), common source or cascode amplifier tube M
N1(5), grid common source or cobasis are total to collector M altogether
N2(6), load resistance R
L(8), feedback follower (9), feedback resistance R
F(4), raceway groove thermal noise source (7).The annexation of circuit as shown in Figure 2.Input signal is connected on common source or cascode amplifier tube M
N1(5) grid or base stage are attempted by the input of forward gain level G (2), and the signal output after amplifying through forward gain level G (2) is connected on common grid common source or cobasis collector M altogether
N2(6) grid is formed feed-forward noise and is offset path.Grid common source or cobasis are total to collector M altogether
N2(6) source electrode or emitter and common source or cascode amplifier tube M
N1(5) the drain electrode or the collection utmost point join, and grid common source or cobasis are total to collector M altogether
N2(6) the drain electrode or the collection utmost point meet load resistance R
L(8), load resistance R
L(8) another utmost point connects supply voltage, and output signal meets feedback resistance R after following through feedback follower (9)
F(4), feedback resistance R
F(4) another utmost point connects input port, forms feedback loop.
During we are bright, adopt resistance negative feedback structure in parallel, noise-reduction coefficient constitutes input impedance matching.
During we are bright, the noise cancellation technique that adopts feedforward path to constitute, the gain stage G in the feedforward path can be realized by passive circuit, also can be realized by active circuit.
During we are bright, adopting resistance as load and feedback impedance, can be that fixed resistance is formed, and also can be the variable resistor array that switch constitutes, and also can be the thyrite that metal-oxide-semiconductor constitutes.
During we are bright, common source or cascode amplifier tube M
N1(5) can be the NMOS pipe, also can be the PMOS pipe, also can be the combination mutual conductance pipe that both combine and use together.
The present invention combines noise cancellation technique and negative feedback, has reduced the noise factor of wideband low noise coefficient.
Description of drawings
Fig. 1 is one and introduces the schematic diagram that low noise amplifier is used in wireless communication receiver.
Fig. 2 is the resistive degeneration wideband low noise amplifier schematic diagram that utilizes feed-forward noise to offset that the present invention proposes.
Fig. 3 is the physical circuit figure that utilizes the resistive degeneration wideband low noise amplifier that feed-forward noise offsets that the present invention proposes.
Embodiment
Below in conjunction with Fig. 3, elaborate the enforcement example of the present invention.
In Fig. 3, the esd protection that has diode (2) and (3) to constitute during input signal source (1) input circuit input prevents electrostatic breakdown.Input signal is biased the grid that voltage is input to amplifier tube MN1 (11) afterwards through the high pass filter of capacitor C 1 (19) and resistance R B1 (18) formation, be biased the grid that voltage is input to amplifier tube MP1 (12) afterwards through high pass filter simultaneously through capacitor C 2 (4) and resistance R B2 (17) formation, also be biased the grid that voltage is input to cascade pipe MN2 (15) afterwards, constitute the feedforward path of noise and signal through high pass filter through capacitor C 3 (5) and resistance R B3 (6) formation.Load resistance RL (7) is connected across between the drain electrode of supply voltage and cascade pipe MN2 (15).Output signal is biased the grid that voltage is input to common fistulae MN3 (8) afterwards through the high pass filter of capacitor C 4 (14) and resistance R B4 (16) formation, MN4 (9) provides bias current for being total to fistulae MN3 (8), feedback resistance RF is connected on the input port source electrode of fistulae MN3 (8) together, the feedback current signal is provided, reduce input impedance, reach the purpose that is complementary with source impedance.Feedback capacity CF (13) is connected between the drain electrode of the source electrode of common fistulae MN3 (8) and amplifier tube MN1 (11), improves high-frequency gain, improves bandwidth.
Because the existence of the feedback loop of fistulae MN3 (8), feedback resistance RF, MN4 (9) formation make that the signal voltage polarity between the drain node of importing node and amplifier tube MN1 (11) is opposite, and noise voltage polarity is identical altogether.The noise that capacitor C 3 (5), resistance R B3 (6), cascade pipe MN2 (15) constitute and the feedforward path of signal with signal and noise all forward be amplified to the grid of cascade pipe MN2 (15), between the grid of cascade pipe MN2 (15) and source electrode, constituted noise cancellation.Two kinds of methods that reduce noise combine, and overlap the output noise that has reduced low noise amplifier.For signal voltage, the noise of capacitor C 3 (5), resistance R B3 (6), cascade pipe MN2 (15) formation and the feedforward path of signal have increased total equivalent transconductance of circuit, and voltage gain improves, and therefore final noise factor will reduce greatly.
Claims (4)
1. the circuit of a wideband low noise amplifier is characterized in that by signal source (1), genertor impedance (3), forward gain level G (2), common source or cascode amplifier tube M
N1(5), grid common source or cobasis are total to collector M altogether
N2(6), load resistance R
L(8), feedback follower (9), feedback resistance R
F(4), raceway groove thermal noise source (7) constitutes; Come the noise factor of step-down amplifier by resistance feedback loop in parallel and noise feedforward path; Wherein, input signal is connected on common source or cascode amplifier tube M
N1(5) grid or base stage are attempted by the input of forward gain level G (2), and the signal output after amplifying through forward gain level G (2) is connected on common grid common source or cobasis collector M altogether
N2(6) grid is formed feed-forward noise and is offset path; Grid common source or cobasis are total to collector M altogether
N2(6) source electrode or emitter and common source or cascode amplifier tube M
N1(5) the drain electrode or the collection utmost point join, and grid common source or cobasis are total to collector M altogether
N2(6) the drain electrode or the collection utmost point meet load resistance R
L(8), load resistance R
L(8) another utmost point connects supply voltage, and output signal meets feedback resistance R after following through feedback follower (9)
F(4), feedback resistance R
F(4) another utmost point connects input port, forms feedback loop.
2. wideband low noise amplifier according to claim 1, the noise cancellation technique that it is characterized in that adopting feedforward path to constitute, the gain stage G in the feedforward path is realized by passive circuit, is perhaps realized by active circuit.
3. wideband low noise amplifier according to claim 1 is characterized in that adopting resistance as load and feedback impedance, and this resistance is fixed resistance, or the variable resistor array of switch formation, or the thyrite of metal-oxide-semiconductor formation.
4. wideband low noise amplifier according to claim 1 is characterized in that common source or cascode amplifier tube M
N1(5) be NMOS pipe, or the PMOS pipe, or both combination mutual conductance pipes of combining and using together.
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| CN 201010162479 CN101807884A (en) | 2010-04-28 | 2010-04-28 | Feed-forward noise cancellation resistance negative feedback broadband low noise amplifier |
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| CN 201010162479 CN101807884A (en) | 2010-04-28 | 2010-04-28 | Feed-forward noise cancellation resistance negative feedback broadband low noise amplifier |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364875A (en) * | 2011-11-15 | 2012-02-29 | 南京国睿嘉源微电子有限公司 | Double-loop feedback high-linearity variable gain amplifier |
| CN102545792A (en) * | 2012-03-19 | 2012-07-04 | 浙江大学 | Circuit and method for cancelling preceding stage thermal noise of low noise amplifier |
| CN102594267A (en) * | 2012-02-17 | 2012-07-18 | 重庆大学 | Front-end broadband low-noise amplifier for digital television tuner |
| CN102651633A (en) * | 2012-05-15 | 2012-08-29 | 江苏科技大学 | Noise current feed-forward type noise cancellation circuit |
| CN102820857A (en) * | 2012-06-25 | 2012-12-12 | 东南大学 | Transimpedance amplifier with broad band and high gain, design method and amplifier chip |
| CN103036578A (en) * | 2012-12-25 | 2013-04-10 | 上海贝岭股份有限公司 | Transmitting terminal circuit for high speed digital communication |
| CN103117712A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier |
| CN103199851A (en) * | 2013-03-19 | 2013-07-10 | 苏州朗宽电子技术有限公司 | Mixing common-source common-base circuit of metallic oxide field-effect tubes and bipolar transistors |
| CN104104337A (en) * | 2014-07-04 | 2014-10-15 | 重庆邮电大学 | Device and method for eliminating noise of broadband CMOS (complementary metal oxide semiconductor) LNA (low-noise amplifier) circuit |
| CN105281682A (en) * | 2015-11-16 | 2016-01-27 | 中国电子科技集团公司第十研究所 | Low-power-consumption bidirectional noise-reducing low-noise amplifier |
| CN105305981A (en) * | 2015-11-30 | 2016-02-03 | 电子科技大学 | Linear broadband low noise amplifier |
| CN105680805A (en) * | 2015-12-31 | 2016-06-15 | 深圳先进技术研究院 | Direct current coupling high precision amplification apparatus |
| CN110445469A (en) * | 2018-05-03 | 2019-11-12 | 三星电机株式会社 | Multiplying arrangement and Distinct matrix method |
| CN111492591A (en) * | 2017-12-18 | 2020-08-04 | 日本电信电话株式会社 | IC chip |
| CN111654245A (en) * | 2020-06-18 | 2020-09-11 | 西安博瑞集信电子科技有限公司 | Low-noise amplifier |
| CN112511111A (en) * | 2020-10-23 | 2021-03-16 | 上海磐启微电子有限公司 | Gain-adjustable low-noise amplifier adopting noise elimination technology |
| CN112532187A (en) * | 2020-11-26 | 2021-03-19 | 北京百瑞互联技术有限公司 | Single-ended input differential output broadband low-noise amplification circuit |
| CN113242020A (en) * | 2021-04-26 | 2021-08-10 | 北京智联安科技有限公司 | Broadband matching low-noise amplifier |
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| CN101674053A (en) * | 2008-09-11 | 2010-03-17 | 三菱电机株式会社 | Cascode circuit |
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| WO2008123624A1 (en) * | 2007-04-02 | 2008-10-16 | Niigata Seimitsu Co., Ltd. | Low-noise amplifier |
| US20090291661A1 (en) * | 2008-05-26 | 2009-11-26 | Fujitsu Limited | Noise cancellation circuit and amplifier with noise cancellation circuit |
| CN101610069A (en) * | 2008-06-20 | 2009-12-23 | 瑞昱半导体股份有限公司 | Power amplifier, power amplification circuit, and amplification method |
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| CN102364875A (en) * | 2011-11-15 | 2012-02-29 | 南京国睿嘉源微电子有限公司 | Double-loop feedback high-linearity variable gain amplifier |
| CN102364875B (en) * | 2011-11-15 | 2016-01-13 | 南京美辰微电子有限公司 | A kind of Double-loop feedback high-linearity variable gain amplifier |
| CN102594267A (en) * | 2012-02-17 | 2012-07-18 | 重庆大学 | Front-end broadband low-noise amplifier for digital television tuner |
| CN102545792A (en) * | 2012-03-19 | 2012-07-04 | 浙江大学 | Circuit and method for cancelling preceding stage thermal noise of low noise amplifier |
| CN102545792B (en) * | 2012-03-19 | 2015-01-14 | 浙江大学 | Circuit and method for cancelling preceding stage thermal noise of low noise amplifier |
| CN102651633B (en) * | 2012-05-15 | 2014-09-10 | 江苏科技大学 | Noise current feed-forward type noise cancellation circuit |
| CN102651633A (en) * | 2012-05-15 | 2012-08-29 | 江苏科技大学 | Noise current feed-forward type noise cancellation circuit |
| CN102820857A (en) * | 2012-06-25 | 2012-12-12 | 东南大学 | Transimpedance amplifier with broad band and high gain, design method and amplifier chip |
| CN102820857B (en) * | 2012-06-25 | 2015-06-10 | 东南大学 | Transimpedance amplifier with broad band and high gain |
| CN103036578A (en) * | 2012-12-25 | 2013-04-10 | 上海贝岭股份有限公司 | Transmitting terminal circuit for high speed digital communication |
| CN103117712A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier |
| CN103117712B (en) * | 2013-01-29 | 2015-06-24 | 天津大学 | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier |
| CN103199851A (en) * | 2013-03-19 | 2013-07-10 | 苏州朗宽电子技术有限公司 | Mixing common-source common-base circuit of metallic oxide field-effect tubes and bipolar transistors |
| CN104104337A (en) * | 2014-07-04 | 2014-10-15 | 重庆邮电大学 | Device and method for eliminating noise of broadband CMOS (complementary metal oxide semiconductor) LNA (low-noise amplifier) circuit |
| CN104104337B (en) * | 2014-07-04 | 2017-03-08 | 重庆邮电大学 | Eliminate the apparatus and method of broadband CMOS LNA circuit noise |
| CN105281682A (en) * | 2015-11-16 | 2016-01-27 | 中国电子科技集团公司第十研究所 | Low-power-consumption bidirectional noise-reducing low-noise amplifier |
| CN105281682B (en) * | 2015-11-16 | 2018-06-26 | 中国电子科技集团公司第十研究所 | The two-way noise reduction low-noise amplifier of low-power consumption |
| CN105305981A (en) * | 2015-11-30 | 2016-02-03 | 电子科技大学 | Linear broadband low noise amplifier |
| CN105305981B (en) * | 2015-11-30 | 2017-12-01 | 电子科技大学 | One kind linearisation wideband low noise amplifier |
| CN105680805A (en) * | 2015-12-31 | 2016-06-15 | 深圳先进技术研究院 | Direct current coupling high precision amplification apparatus |
| CN105680805B (en) * | 2015-12-31 | 2019-03-05 | 深圳先进技术研究院 | A kind of dc-couple high-precision amplification device |
| CN111492591A (en) * | 2017-12-18 | 2020-08-04 | 日本电信电话株式会社 | IC chip |
| US11233393B2 (en) | 2017-12-18 | 2022-01-25 | Nippon Telegraph And Telephone Corporation | IC chip |
| CN111492591B (en) * | 2017-12-18 | 2022-05-17 | 日本电信电话株式会社 | IC chip |
| CN110445469A (en) * | 2018-05-03 | 2019-11-12 | 三星电机株式会社 | Multiplying arrangement and Distinct matrix method |
| CN110445469B (en) * | 2018-05-03 | 2024-02-23 | 三星电机株式会社 | Amplifying apparatus and variable gain control method |
| CN111654245A (en) * | 2020-06-18 | 2020-09-11 | 西安博瑞集信电子科技有限公司 | Low-noise amplifier |
| CN112511111A (en) * | 2020-10-23 | 2021-03-16 | 上海磐启微电子有限公司 | Gain-adjustable low-noise amplifier adopting noise elimination technology |
| CN112511111B (en) * | 2020-10-23 | 2023-12-05 | 上海磐启微电子有限公司 | Gain-adjustable low-noise amplifier adopting noise elimination technology |
| CN112532187A (en) * | 2020-11-26 | 2021-03-19 | 北京百瑞互联技术有限公司 | Single-ended input differential output broadband low-noise amplification circuit |
| CN112532187B (en) * | 2020-11-26 | 2024-06-18 | 北京百瑞互联技术股份有限公司 | Single-ended input differential output broadband low-noise amplifying circuit |
| CN113242020A (en) * | 2021-04-26 | 2021-08-10 | 北京智联安科技有限公司 | Broadband matching low-noise amplifier |
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Application publication date: 20100818 |