CN112511111B - Gain-adjustable low-noise amplifier adopting noise elimination technology - Google Patents
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention provides a gain-adjustable low-noise amplifier adopting noise elimination technology, which comprises a power supply, a grounding end, a signal source and an equivalent output impedance connected with the signal source, and is characterized by comprising the following components: the noise elimination branch circuit is connected with the signal source, wherein the noise elimination branch circuit mainly comprises NMOS common gate transistors MN1 and MN2, a pull-up resistor RL and a PMOS common source transistor MP 1; the signal amplifying branches are connected with the noise eliminating branch respectively, wherein the signal amplifying branch mainly comprises an NMOS common source tube MNS, a PMOS common source tube MPS, an NMOS common gate tube MNC and a PMOS common gate tube MPC. The technical scheme has the beneficial effects that by adding the noise elimination technology, lower noise coefficients can be realized under the same power consumption, so that the power consumption is saved. The input impedance of the front end is basically unchanged under different gains, so that the matching is unchanged, and the consistency of different chips is improved.
Description
Technical Field
The invention relates to the technical field of radio frequency transceivers, in particular to a low-power-consumption wireless remote control dimming system and a wireless remote controller.
Background
The existing low noise amplifier generally adopts a mode of changing the gain by changing the number of different input units to realize gain adjustment, but the front end matching is affected, so that the gain is affected by the characteristics of parasitic and front end matching devices, and the consistency is poor. In order to increase the sensitivity of the receiving link, the front-end low noise amplifier needs a very low noise figure, which typically requires a large power consumption to implement.
Disclosure of Invention
The problems existing in the prior noise amplifier are solved. The low-power consumption gain-adjustable low-noise amplifier has the advantages that the input impedance of the front end is basically unchanged under different gains, so that matching is unchanged, and consistency of different chips is improved.
The method specifically comprises the following steps:
a gain-adjustable low noise amplifier employing noise cancellation techniques, comprising a power supply, a ground, a signal source, and an equivalent output impedance coupled to the signal source, wherein the gain-adjustable low noise amplifier comprises:
the noise elimination branch circuit is connected with the signal source, wherein the noise elimination branch circuit mainly comprises NMOS common gate transistors MN1 and MN2, a pull-up resistor RL and a PMOS common source transistor MP 1;
the signal amplifying branches are connected with the noise eliminating branch respectively, wherein the signal amplifying branch mainly comprises an NMOS common source tube MNS, a PMOS common source tube MPS, an NMOS common gate tube MNC and a PMOS common gate tube MPC.
Preferably, the plurality of signal amplifying branches selectively open a corresponding number of the signal amplifying branches according to different gains.
Preferably, the input impedance of the low noise amplifier satisfies the following formula:
Rin≈1/gm MN1 ；
wherein Rin is the input resistance; gm (gm) MN1 Transconductance for nmos common grid tube;
the input impedance does not vary with gain.
Preferably, the output impedance of the low noise amplifier is as follows:
that is, the output resistance is inversely proportional to the current I;
wherein Rout is the output resistance;
ro ns equivalent output impedance of the nmos common source tube;
ro nc equivalent output impedance of the nmos common gate tube;
ro ps equivalent output impedance for pmos common source tube;
ro pc equivalent output impedance for pmos cascode;
gm nc transconductance for nmos common grid tube;
gm pc transconductance for pmos cascode;
i is the current flowing through each MOS tube.
Preferably, the output main pole of the low noise amplifier is as follows:
wherein Cout is the equivalent output capacitance of the output node and hardly varies with current.
Rout is the equivalent output impedance of the amplifier
ro ns Equivalent output impedance of the nmos common source tube;
ro nc equivalent output impedance of the nmos common gate tube;
ro ps equivalent output impedance for pmos common source tube;
ro pc equivalent output impedance for pmos cascode;
gm nc transconductance for nmos common grid tube;
gm pc transconductance for pmos cascode;
the bandwidth is therefore proportional to the current;
further, due to the system function
Where Av is the amplifier gain, ω out For the output dominant pole, w is the frequency.
Thus at frequencies well above the main pole, the gain is proportional to the main pole, i.e. the gain is proportional to the current at high frequencies.
Preferably, the input impedance matching of the low noise amplifier satisfies the following formula:
Rin≈1/gm MN1 ＝R s ；
wherein gm is MN1 For the transconductance of MN1 tube, R s Equivalent output impedance for the signal source.
Preferably, the noise current of the signal amplifying branch is converted into an output, as shown in the following formula:
where k is the Boltzmann constant, T is absolute temperature, gamma is a coefficient related to the transistor bias state, gm MNS1 And gm MPS1 Is the transconductance of the common source tube of NMOS and PMOS.
Preferably, the noise contributed by MN1 of the noise cancellation branch is converted to an output, as shown in the following formula:
where k is Boltzmann constant, T is absolute temperature, gamma is a coefficient related to transistor bias state, and noise, gm, are conveniently calculated MN1 ，gm MNS1 And gm MP1 Transconductance of MN1, MNS1 and MP1 tubes respectively, R L The pull-up resistance value;
the noise contributed by the noise cancellation branch pull-up resistor RL is converted to an output as shown in the following equation:
where k is the Boltzmann constant, T is absolute temperature, gm MP1 Transconductance of MP1 pipe, R L The pull-up resistance value.
Preferably, the amplification gain of the noise cancellation branch is as follows:
wherein Rs is the equivalent input resistance of the signal source end, rout is the equivalent output resistance of the amplifier, gm MN1 ,gm MNS1 ,gm MPS1 ,gm MN1 ,gm MP1 Transconductance, R of MOS tubes MN1, MNS1, MPS1, MN1, MP1 respectively L Is a pull-down resistor.
Preferably, the overall noise figure of the low noise amplifier is calculated as follows:
wherein k is Boltzmann constant, T is absolute temperature, gamma is a coefficient related to the transistor bias state, gm MN1 ,gm MNS1 ,gm MPS1 ,gm MN1 ,gm MP1 Transconductance, R of MOS tubes MN1, MNS1, MPS1, MN1, MP1 respectively L Is a pull-down resistor.
The technical scheme has the following advantages or beneficial effects: by adding the noise elimination technology, lower noise coefficients can be achieved under the same power consumption, so that the power consumption is saved. The input impedance of the front end is basically unchanged under different gains, so that the matching is unchanged, and the consistency of different chips is improved.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a gain-tunable low noise amplifier employing noise cancellation techniques in accordance with the present invention;
fig. 2 is a schematic diagram of another embodiment of a gain-adjustable low noise amplifier employing noise cancellation techniques in accordance with the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
The invention is further described below with reference to the drawings and specific examples, which are not intended to be limiting.
The method specifically comprises the following steps:
as shown in fig. 1, an embodiment of a gain-adjustable low noise amplifier using noise cancellation technology includes a power supply, a ground terminal, a signal source, and an equivalent output impedance connected to the signal source, where the gain-adjustable low noise amplifier includes:
the noise elimination branch circuit is connected with the signal source, wherein the noise elimination branch circuit mainly comprises NMOS common gate transistors MN1 and MN2, a pull-up resistor RL and a PMOS common source transistor MP 1;
the signal amplifying branches are connected with the noise eliminating branch respectively, wherein the signal amplifying branch mainly comprises an NMOS common source tube MNS, a PMOS common source tube MPS, an NMOS common gate tube MNC and a PMOS common gate tube MPC.
In the technical scheme, by adding the noise elimination technology, lower noise coefficients can be realized under the same power consumption, so that the power consumption is saved. .
In a preferred embodiment, the plurality of signal amplifying branches selectively turn on a corresponding number of signal amplifying branches according to different gains.
In the above technical scheme, how many branches are opened is selected according to different gains required. The 1 st signal amplifying branch circuit is composed of an NMOS common source tube MNS1, a PMOS common source tube MPS1, an NMOS common gate tube MNC1 and a PMOS common gate tube MPC 1. The 2 nd branch is composed of an NMOS common source tube MNS2, a PMOS common source tube MPS2, an NMOS common gate tube MNC2 and a PMOS common gate tube MPC 2. And the ith branch is composed of an NMOS common source tube MNSI, a PMOS common source tube MPSI, an NMOS common gate tube MNCI and a PMOS common gate tube MPCi by analogy.
In a preferred embodiment, the input impedance of the low noise amplifier satisfies the following equation:
Rin≈1/gm MN1 ；
wherein Rin is the input resistance; gm (gm) MN1 Transconductance for nmos common grid tube;
the input impedance does not vary with gain.
In a preferred embodiment, the output impedance of the low noise amplifier is as follows:
that is, the output resistance is inversely proportional to the current I;
wherein Rout is the output resistance;
ro ns equivalent output impedance of the nmos common source tube;
ro nc equivalent output impedance of the nmos common gate tube;
ro ps equivalent output impedance for pmos common source tube;
ro pc equivalent output impedance for pmos cascode;
gm nc transconductance for nmos common grid tube;
gm pc transconductance for pmos cascode;
i is the current flowing through each MOS tube.
In a preferred embodiment, the low noise amplifier output main pole is as follows:
wherein Cout is the equivalent output capacitance of the output node and hardly varies with current.
Rout is the equivalent output impedance of the amplifier
ro ns Equivalent output impedance of the nmos common source tube;
ro nc equivalent output impedance of the nmos common gate tube;
ro ps equivalent output impedance for pmos common source tube;
ro pc equivalent output impedance for pmos cascode;
gm nc transconductance for nmos common grid tube;
gm pc transconductance for pmos cascode;
the bandwidth is therefore proportional to the current;
further, due to the system function
Where Av is the amplifier gain, ω out For the output dominant pole, w is the frequency.
Thus at frequencies well above the main pole, the gain is proportional to the main pole, i.e. the gain is proportional to the current at high frequencies.
In a preferred embodiment, as shown in fig. 2, the gain maximum branch is as follows, where VDD is a power supply, GND is ground, vs is a signal source, rs is a signal source equivalent output impedance, RL is a branch pull-up resistor, C is an input coupling capacitor, MNS1 is an input common-source NMOS tube, MPS1 is an input common-source PMOS tube, MNC1 is a common-gate NMOS tube of MNS1, MPC1 is a common-gate PMOS tube of MPS1, MN1 and MN2 are common-gate tubes of the noise cancellation branch, and MP1 is a PMOS amplifier tube of the noise cancellation branch. The biasing circuitry for each tube is omitted from the figure.
The input impedance match of the low noise amplifier satisfies the following equation:
Rin≈1/gm MN1 ＝R s ；
wherein gm is MN1 For the transconductance of MN1 tube, R s Equivalent output impedance for the signal source.
In a preferred embodiment, the noise current of the signal amplifying branch is converted to an output as shown in the following equation:
where k is the Boltzmann constant, T is absolute temperature, gamma is a coefficient related to the transistor bias state, gm MNS1 And gm MPS1 Is the transconductance of the common source tube of NMOS and PMOS.
In a preferred embodiment, the noise contributed by MN1 of the noise cancellation branch is converted to an output as shown in the following equation:
where k is Boltzmann constant, T is absolute temperature, gamma is a coefficient related to transistor bias state, and noise, gm, are conveniently calculated MN1 ，gm MNS1 And gm MP1 Transconductance of MN1, MNS1 and MP1 tubes respectively, R L The pull-up resistance value;
the noise contributed by the noise cancellation branch pull-up resistor RL is converted to an output as shown in the following equation:
where k is the Boltzmann constant, T is absolute temperature, gm MP1 Transconductance of MP1 pipe, R L The pull-up resistance value.
In a preferred embodiment, the amplification gain of the noise cancellation branch is shown as follows:
wherein Rs is the equivalent input resistance of the signal source end, rout is the equivalent output resistance of the amplifier, gm MN1 ,gm MNS1 ,gm MPS1 ,gm MN1 ,gm MP1 Transconductance, R of MOS tubes MN1, MNS1, MPS1, MN1, MP1 respectively L Is a pull-down resistor.
In a preferred embodiment, the overall noise figure of the low noise amplifier is calculated as follows:
wherein k is Boltzmann constant, T is absolute temperature, gamma is a coefficient related to the transistor bias state, gm MN1 ,gm MNS1 ,gm MPS1 ,gm MN1 ,gm MP1 Transconductance, R of MOS tubes MN1, MNS1, MPS1, MN1, MP1 respectively L Is a pull-down resistor.
The foregoing is merely illustrative of the preferred embodiments of the present invention and is not intended to limit the embodiments and scope of the present invention, and it should be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations of the present invention, and are intended to be included in the scope of the present invention.
Claims (9)
1. A gain-adjustable low noise amplifier employing noise cancellation techniques, comprising a power supply, a ground terminal, a signal source, and an equivalent output impedance coupled to the signal source, comprising:
the noise elimination branch circuit is connected with the signal source, wherein the noise elimination branch circuit mainly comprises NMOS common gate transistors MN1 and MN2, a pull-up resistor RL and a PMOS common source transistor MP 1;
the signal amplification branches are respectively connected with the noise elimination branch, wherein the signal amplification branch mainly comprises an NMOS common source tube MNS, a PMOS common source tube MPS, an NMOS common gate tube MNC and a PMOS common gate tube MPC;
the amplification gain of the noise cancellation branch is shown as follows:
wherein Rs is the equivalent input resistance of the signal source end, rout is the equivalent output resistance of the amplifier, gm MN1 ,gm MNS1 ,gm MPS1 ,gm MN1 ,gm MP1 Transconductance, R of MOS tubes MN1, MNS1, MPS1, MN1, MP1 respectively L Is a pull-down resistor.
2. The gain-adjustable low noise amplifier of claim 1, wherein a plurality of said signal amplification branches are selectively turned on a corresponding number of said signal amplification branches based on different gains.
3. The gain-tunable low noise amplifier of claim 1, wherein the input impedance of the low noise amplifier satisfies the following equation:
Rin≈1/gm MN1 ；
wherein Rin is the input resistance; gm (gm) MN1 Transconductance for nmos common grid tube;
the input impedance does not vary with gain.
4. The gain-tunable low noise amplifier of claim 1, wherein the output impedance of the low noise amplifier is represented by the formula:
that is, the output resistance is inversely proportional to the current I;
wherein Rout is the output resistance;
ro ns equivalent output impedance of the nmos common source tube;
ro nc equivalent output impedance of the nmos common gate tube;
ro ps equivalent output impedance for pmos common source tube;
ro pc equivalent output impedance for pmos cascode;
gm nc transconductance for nmos common grid tube;
gm pc transconductance for pmos cascode;
i is the current flowing through each MOS tube.
5. The gain-adjustable low noise amplifier of claim 1, wherein the low noise amplifier output main pole is represented by the formula:
wherein Cout is the equivalent output capacitance of the output node and hardly varies with current.
Rout is the equivalent output impedance of the amplifier
ro ns Is nmos co-sourceEquivalent output impedance of the tube;
ro nc equivalent output impedance of the nmos common gate tube;
ro ps equivalent output impedance for pmos common source tube;
ro pc equivalent output impedance for pmos cascode;
gm nc transconductance for nmos common grid tube;
gm pc transconductance for pmos cascode;
the bandwidth is therefore proportional to the current;
further, due to the system function
Where Av is the amplifier gain, ω out The main pole is output, and w is frequency;
thus at frequencies well above the main pole, the gain is proportional to the main pole, i.e. the gain is proportional to the current at high frequencies.
6. The gain-tunable low noise amplifier of claim 1, wherein the input impedance match of the low noise amplifier satisfies the following equation:
Rin≈1/gm MN1 ＝R s ；
wherein gm is MN1 For the transconductance of MN1 tube, R s Equivalent output impedance for the signal source.
7. The gain-adjustable low noise amplifier of claim 1, wherein the noise current of the signal amplification branch is converted to an output as shown in the following equation:
where k is the Boltzmann constant, T is absolute temperature, gamma is a coefficient related to the transistor bias state, gm MNS1 And gm MPS1 For common source of NMOS and PMOSA transconductance.
8. The gain-tunable low-noise amplifier according to claim 1, wherein the noise contributed by MN1 of the noise cancellation branch is converted to an output as shown in the following equation:
where k is Boltzmann constant, T is absolute temperature, gamma is a coefficient related to transistor bias state, and noise, gm, are conveniently calculated MN1 ，gm MNS1 And gm MP1 Transconductance of MN1, MNS1 and MP1 tubes respectively, R L The pull-up resistance value;
the noise contributed by the noise cancellation branch pull-up resistor RL is converted to an output as shown in the following equation:
where k is the Boltzmann constant, T is absolute temperature, gm MP1 Transconductance of MP1 pipe, R L The pull-up resistance value.
9. The gain-tunable low noise amplifier of claim 1, wherein the overall noise figure of the low noise amplifier is calculated as follows:
where k is the Boltzmann constant, T is absolute temperature, gamma is a coefficient related to the transistor bias state, gm MN1 ,gm MNS1 ,gm MPS1 ,gm MN1 ,gm MP1 Transconductance, R of MOS tubes MN1, MNS1, MPS1, MN1, MP1 respectively L Is a pull-down resistor.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807884A (en) * | 2010-04-28 | 2010-08-18 | 复旦大学 | Feed-forward noise cancellation resistance negative feedback broadband low noise amplifier |
| CN108923753A (en) * | 2018-06-07 | 2018-11-30 | 天津大学 | The bandwidth expansion circuit of cascade trans-impedance amplifier based on CMOS technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807884A (en) * | 2010-04-28 | 2010-08-18 | 复旦大学 | Feed-forward noise cancellation resistance negative feedback broadband low noise amplifier |
| CN108923753A (en) * | 2018-06-07 | 2018-11-30 | 天津大学 | The bandwidth expansion circuit of cascade trans-impedance amplifier based on CMOS technology |
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| Title |
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| 一种低功耗高增益复合共源共栅放大器;李新等;《微电子学》;第43卷(第4期);472-475 * |
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