CN108923753A - The bandwidth expansion circuit of cascade trans-impedance amplifier based on CMOS technology - Google Patents
The bandwidth expansion circuit of cascade trans-impedance amplifier based on CMOS technology Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45024—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are cascode coupled transistors
Abstract
The invention discloses a kind of the cascade trans-impedance amplifier bandwidth expansion circuit based on CMOS technology, the circuit structure full symmetric for left and right；The circuit of left-right parts includes：Traditional main cathode-input amplifier, novel cascade booster amplifier and end source follower three parts；The circuit shields Miller effect using novel cascode structure booster amplifier；Bigger mutual conductance is provided by parallel PMOS structure for grid NMOS tube altogether；The circuit is added end source follower and rear class parasitic capacitance is isolated, promote the overall bandwidth of circuit by π type matching network shielded segment parasitic capacitance；The circuit is effectively reduced input impedance, preferably input capacitance of the isolation based on photodetector junction capacity using RGC structure；The circuit is adjusted and optimizes to component parameter, and uses differential configuration, significantly extends the bandwidth of operation of circuit.
Description
Technical field
The present invention relates to optic communication, light network and visible light communication field more particularly to a series of extension cascades across
The new method of impedance amplifier bandwidth.
Background technique
The arriving of big data era accelerates the demand to wideband development, and being skyrocketed through for flow is intended to
Speed is higher, the broader fibre-optic transmission system (FOTS) of frequency band.Traditional copper-connection is limited by the factors such as crosstalk and loss, has been difficult to
Superfast data are adapted to transmit and exchange.However, there is high-frequency loss using light as the light network technology of transmission information carrier
Low, many advantages, such as crosstalk noise is small and working band is wide, be the ideal replacer being electrically interconnected, thus is led in high speed data transfer
Domain obtains extensive concern.Although with HBT/HEMT (the heterogenous dual-pole crystalline substance of the high electron mobility materials preparation such as GaAs, InP
Body pipe/high electron mobility field-effect transistor) circuit has good bandwidth and gain characteristic, but its expensive, power consumption
The problems such as high and integrated level is low is but difficult to solve.With the continuous reduction of silicon-based technology node, current main-stream standard CMOS work
The characteristic frequency of MOSFET element has reached tens of girz in skill, and it is with technology maturation, integrated level is high, low in energy consumption, cost
Low plurality of advantages.Therefore, developing high speed optoelectronic integrated chip based on standard CMOS process platform becomes the heat of optical communication field
One of point.
Downlink of the photoreceiver as optical communication system, performance indicator will generate the overall performance of system direct
It influences.Key modules of the trans-impedance amplifier as photoreceiver front-end amplifying circuit carry amplification photodetector and detect
Faint photoelectric current, and be translated into the responsibility of voltage signal, the parameter indexes such as bandwidth, gain, noise of trans-impedance amplifier
Quality will directly decision photoreceiver performance.Currently, the trans-impedance amplifier being used widely mostly uses common source (Common
Source, CS), altogether the structures such as grid (Common Gate, CG) and adjustment type cascade (Regulated Cascode, RGC).
Wherein, RGC structure is because of its lesser input impedance, can effectively shield parasitic capacitance (including the photodetector of input terminal
Junction capacity, the parasitic capacitance of electrostatic discharge protective circuit and input terminal PAD parasitic capacitance), push dominant pole to high frequency, reach promotion
The purpose of bandwidth, thus frequently as the foundation structure of trans-impedance amplifier design optimization.
Although the trans-impedance amplifier of the classical RGC structure based on standard CMOS process has obtained the bandwidth of girz, with
The influence of input parasitic capacitance and rear class capacitive parasitic effect to amplifier overall bandwidth based on photodetector junction capacity according to
It is so very big, make it be difficult to meet growing bandwidth demand.
Summary of the invention
The circuit of the present invention provides a kind of cascade trans-impedance amplifier bandwidth expansion based on CMOS technology, the present invention
Its bandwidth is extended on the basis of traditional RGC trans-impedance amplifier, under the premise of promoting entire gain slightly, significantly
The bandwidth of operation for extending circuit realizes the novel RGC trans-impedance amplifier of a kind of high bandwidth, differential configuration, as detailed below to retouch
It states：
A kind of cascade trans-impedance amplifier bandwidth expansion circuit based on CMOS technology, the circuit are that left and right is completely right
The structure of title；
Wherein, the circuit of left-right parts includes：Traditional main cathode-input amplifier, novel cascade booster amplifier
With end source follower three parts；
The circuit shields Miller effect using novel cascode structure booster amplifier；Pass through parallel PMOS structure
Bigger mutual conductance is provided for total grid NMOS tube；
It is parasitic that end source follower isolation rear class is added by π type matching network shielded segment parasitic capacitance in the circuit
Capacitor promotes the overall bandwidth of circuit；
The circuit is effectively reduced input impedance using RGC structure, and preferably isolation is with photodetector junction capacity
Main input capacitance；
The circuit is adjusted and optimizes to component parameter, and uses differential configuration, significantly extends circuit
Bandwidth of operation.
The beneficial effect of the technical scheme provided by the present invention is that：
1, the present invention is effectively reduced input impedance using RGC structure, can preferably be isolated with photodetector knot electricity
Input capacitance based on appearance；
2, the present invention is due to that can provide higher output impedance using the interpole amplifier of cascode structure, simultaneously
Influence of the shielding Miller effect to bandwidth well, therefore the present invention can obtain higher gain bandwidth products；
3, it since PMOS tube in parallel and original common source NMOS tube constitute new commonsource amplifier, can be put for common gate
Big device provides bigger mutual conductance, while concatenated inductance forms π type matching network between common source and common gate, generation
LC resonance can mask the influence of section parasitic capacitor, so the present invention can draw dominant pole position to higher frequency, reach
To the purpose of spread bandwidth；
4, become larger due to the output impedance of source follower with the increase of frequency, have certain inductance characteristic, so this
Invention can be effectively isolated influence of the capacity effect to overall bandwidth of late-class circuit.
Detailed description of the invention
Fig. 1 is the circuit diagram of novel difference cascode trans-impedance amplifier；
Fig. 2 is the circuit diagram of classical RGC trans-impedance amplifier；
Fig. 3 is the half of small signal circuit figure of novel difference cascode trans-impedance amplifier；
Fig. 4 is that novel difference cascode trans-impedance amplifier and the comparison of the frequency response of classics RGC trans-impedance amplifier are shown
It is intended to；
Fig. 5 is that the comparison of novel difference cascode trans-impedance amplifier and the noise current of classics RGC trans-impedance amplifier is shown
It is intended to.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, embodiment of the present invention is made below further
Ground detailed description.
Embodiment 1
The bandwidth expansion circuit of the embodiment of the invention provides a kind of cascade trans-impedance amplifier based on CMOS technology,
Referring to figures 1-3, which is the full symmetric structure in left and right；
Wherein, the circuit of left-right parts includes：Traditional main cathode-input amplifier, novel cascade booster amplifier
With end source follower three parts；
The circuit shields Miller effect using novel cascode structure booster amplifier；Pass through parallel PMOS structure
Bigger mutual conductance is provided for total grid NMOS tube；
It is parasitic that end source follower isolation rear class is added by π type matching network shielded segment parasitic capacitance in the circuit
Capacitor promotes the overall bandwidth of circuit；
The circuit is effectively reduced input impedance using RGC structure, and preferably isolation is with photodetector junction capacity
Main input capacitance；
The circuit is adjusted and optimizes to component parameter, and uses differential configuration, significantly extends circuit
Bandwidth of operation.
In conclusion the embodiment of the present invention extends its bandwidth on the basis of traditional RGC trans-impedance amplifier, make it is whole
Under the premise of body gain is slightly promoted, the bandwidth of operation of circuit is significantly extended, realizes a kind of high bandwidth, differential configuration
Novel RGC trans-impedance amplifier.
Embodiment 2
The scheme in embodiment 1 is further introduced below with reference to Fig. 1-Fig. 3, it is described below：
Fig. 1 is a series of cascade trans-impedance amplifier bandwidth expanding methods design proposed using the embodiment of the present invention
Novel difference cascode trans-impedance amplifier, the amplifier are bilateral symmetry (i.e. full symmetric structure).
Wherein, current source IPDWith capacitor CPDParallel-connection structure be photodetector equivalent-circuit model.Novel difference is total
Source is total to grid trans-impedance amplifier and is mainly followed by traditional main cathode-input amplifier, novel cascade booster amplifier and end source
Device three parts composition.
Wherein, transistor M21, resistance R21、R22It constitutes main and is total to the big device of grid；Transistor M22、M23、MP, resistance R23And inductance
L1Booster amplifier is constituted (that is, transistor M22Source electrode meets inductance L1One end, transistor M22Grounded drain；Inductance L1It is another
End meets transistor M respectively23Drain electrode and transistor MPSource electrode, transistor M23Source electrode connecting resistance R23One end, resistance R23's
The other end, transistor MPDrain electrode meet power vd D, transistor MPGrounded-grid)；Transistor M24With current source ISSConstitute end
Hold source follower (that is, transistor M24Drain electrode meet current source ISSOne end, transistor M24Source electrode connect power vd D, crystal
Pipe M24Grid meet transistor M21Source electrode, current source ISSThe other end ground connection).
Because the circuit structure of design of the embodiment of the present invention is full symmetric structure, therefore left-half is only carried out with above-mentioned device
The description of circuit structure, right half part circuit structure and so on, the embodiment of the present invention does not repeat them here this.
Next, the embodiment of the present invention will gradually show the application of bandwidth expanding method using classical RGC structure as starting point.
Fig. 2 show the circuit diagram of classical RGC trans-impedance amplifier.The amplifier is by R11、R12、M11What is constituted is total to
Grid main amplifier and R13、M12Common source booster amplifier two parts of composition form.Its main function is to receive photodetection
The faint photoelectric current that device detects, amplifies it and is translated into voltage signal.The source of common grid amplifier inputs
Photoelectric current IPDIt is fed to the input terminal of commonsource amplifier, the output end signal of commonsource amplifier is fed to common gate and puts
The grid of big device, the input impedance of RGC trans-impedance amplifier are
Wherein, gm11、gm12Respectively transistor M11、M12Mutual conductance.Although RGC amplifier reduces common grid amplifier
Input impedance, but can not the completely isolated biggish junction capacity of photodetector.
Firstly, the embodiment of the present invention is using the common source auxiliary in cascode structure substitution tradition RGC trans-impedance amplifier
Amplifier.Small signal circuit analysis according to Fig.3, the output impedance of cascode structure are：
Rout=(1+gm22ro3)ro2+ro3 (2)
Wherein, ro2、ro3Respectively transistor M22、M23Equivalent small signal resistance, gm22For transistor M22Mutual conductance.By
In gm22ro3Much larger than 1, then：
Rout≈gm22ro3ro2 (3)
Compared with traditional common-source stage booster amplifier, the introducing of bank tube can be by output impedance by the r of traditional RGC structure altogethero2
Promote gm22ro3Times, therefore the gain of amplifier has obtained effective promotion.At the same time, cascode structure can also shield well
Influence of the Miller capacitance to amplifier bandwidth.There are two the pole of influence RGC trans-impedance amplifier bandwidth is main：
Wherein, CpdFor photodetector equivalent input capacitance (including PD junction capacity, electrostatic discharge protective circuit parasitic capacitance,
PAD parasitic capacitance), CgdFor the gate leakage capacitance of transistor, CdbFor the capacitance of drain of transistor, CLFor rear class equivalent output capacitance.
fp1It is mainly determined by the equivalent input capacitance of photodetector, fp2Mainly determined by the output capacitance of late-class circuit.
Classical RGC structure common source booster amplifier-three dB bandwidth is：
And be introduced into bank tube altogether and the feedback mechanism of compole amplifier in RGC amplifier is improved, 3 institute of analysis chart
The small signal circuit shown can obtain, the input impedance of new amplifier：
It is found that input impedance is effectively reduced compared with formula (1), so that the pole that input terminal generates has been shifted to more
High frequency further shields influence of the bulky capacitor effect of photodetector to amplifier bandwidth.Cascade pole auxiliary
Amplifier-three dB bandwidth is：
Compared with formula (6), (1+gm11/gm12) item fallen by effective " shielding ", transistor M21Gate leakage capacitance to input
The Miller effect that end generates is minimized, and bandwidth has obtained significantly being promoted.It can be seen that cascade compole amplifier
Introducing improve the gain bandwidth product of amplifier, improve its transmission characteristic.
Secondly, PMOS tube M in parallelPIntroducing by the bandwidth of further boost amplifier.MPWith M22It together constitutes novel
Common-source amplifier in difference cascode trans-impedance amplifier compole amplifier can be feedback transistor M23It provides bigger
Mutual conductance gm23(gm22+gmP), so that input impedance becomes：
Input impedance further reduces, and dominant pole has had changed into the output end mainly influenced by rear class capacity effect at this time
Pole, the input parasitic capacitance based on photodetector have obtained effectively shielding.
The embodiment of the present invention also passes through the method for introducing passive device and has carried out extension further to the bandwidth of circuit.Nothing
Source inductance L1It is connected in series to transistor M22And M23Between, so that increasing a new inductance knot in the active feedback access of script
Structure, with M22The capacitance of drain and M of pipe23The source capacitance of pipe forms π type matching network, LC resonance effect is generated, by the part
Parasitic capacitance resonance eliminates well.The gain bandwidth product (GBW) of amplifier is typically expressed as：
Wherein, CDFor transistor drain terminal capacitor, CLFor amplifier rear class parasitic capacitance.It is attached that induction structure effectively eliminates its
The drain terminal capacitor of nearly transistor, therefore the gain bandwidth product of amplifier is improved, the pole of amplifier is pulled to higher frequency, band
Width is extended.
There are a real poles and a pair of of complex conjugate poles for the three ranks response of π type matching network.As inductance value L1Very little
When, the real pole frequency of circuit is lower, and complex conjugate poles frequency is higher, and damped coefficient is smaller, so frequency response curve meeting
Due to real pole presence and occur as soon as decaying in lower frequency, influenced to will appear again in high frequency by conjugate pole
It rises, circuit gain curve big rise and fall, and bandwidth very little.As inductance value L1When larger, the real pole in circuit is pushed to height
At frequency, the real and imaginary parts of complex conjugate poles are greatly lowered, but its damped coefficient is still smaller, so frequency response curve
It will appear gain spike in low frequency, as the increase spike phenomenon of inductance value will be more obvious.Therefore, one need to be searched out
A best inductance value reduces the bit error rate to avoid the raw beneficial ripple of volume increase and gain spike.
Finally, in order to reduce influence of the late-class circuit parasitic capacitance to amplifier overall bandwidth, invention introduces source with
It is optimized with device structure.In the case where supply voltage is certain, if wanting to obtain higher gain, output impedance must be as far as possible
Ground is big, this allows for the output impedance of pre-amplifier and the parasitic capacitance of late-class circuit forms a low-frequency pole, serious shadow
Ring the overall bandwidth of amplifier.Therefore, the embodiment of the present invention introduces source follower influencing each other between two-stage is isolated.Source
The output impedance of follower increases with the raising of frequency, has certain inductance characteristic, can effectively shield rear class parasitism
Pole is pulled to high frequency, promotes bandwidth by the influence of capacitor.Meanwhile the gain of source follower is about 1, so that transistor M24Grid
Source capacitor, which is reduced to, to be ignored, but also output end pole is mobile to high frequency direction.
It is novel by the half of small signal circuit Tu Ke get of novel difference cascode trans-impedance amplifier shown in analysis chart 3
The transfer function of difference cascode trans-impedance amplifier：
Wherein,
K=Cgd24Cgs21(Cgs22gm24+Cpdgm22)；
M=L1gm23R22R23(gm21gm24Cd22+Cgs21gm22)；
By transfer function it is found that novel difference cascode trans-impedance amplifier there are a real poles and a pair of of complex conjugate
Pole.Wherein, real pole has been pushed to high frequency treatment, and complex conjugate poles become the dominant pole of amplifier.Dominant pole passes through
The booster amplifier of cascode structure, the parallel shunt feedback of PMOS tube and NMOS tube formation, π type matching network, source follow
The a series of structure optimization such as device has also been pushed to higher frequency, and the bandwidth characteristic of circuit has obtained significantly optimizing.
In conclusion method proposed by the present invention efficiently solves traditional RGC trans-impedance amplifier with photodetector knot
The influence of input parasitic capacitance and rear class capacitive parasitic effect to amplifier overall bandwidth based on capacitor, provided bandwidth are opened up
Art of giving full play to one's skill is expected to be applied in high-speed light receiver design.
Embodiment 3
Feasibility verifying is carried out to the scheme in Examples 1 and 2 below with reference to Fig. 4 and Fig. 5, it is described below：
Based on 0.18 μm of CMOS technology of UMC, emulation and parameter optimization have been carried out to circuit structure.Fig. 4 show novel
The frequency response contrast schematic diagram of difference cascode trans-impedance amplifier and classics RGC trans-impedance amplifier.
Using the bandwidth broadning method of the offer of design of the embodiment of the present invention, designed novel difference cascode is across resistance
Amplifier possess 61.16dB gain and 8.36GHz-three dB bandwidth, compared with classical RGC structure, gain slightly have promoted
Under the premise of, bandwidth has obtained significantly optimizing.
Fig. 5 is the noise current comparison signal of novel difference cascode trans-impedance amplifier and classics RGC trans-impedance amplifier
Figure.Compared with classical RGC structure, although novel difference cascode trans-impedance amplifier is slightly promoted in the noise of high frequency treatment,
In bandwidth range still less than
In conclusion the method that the embodiment of the present invention proposes is efficiently solved traditional RGC trans-impedance amplifier and is visited with photoelectricity
Influence of the input parasitic capacitance and rear class capacitive parasitic effect based on device junction capacity to amplifier overall bandwidth is surveyed, it is provided
Bandwidth broadning technology is expected to be applied in high-speed light receiver design.
The embodiment of the present invention to the model of each device in addition to doing specified otherwise, the model of other devices with no restrictions,
As long as the device of above-mentioned function can be completed.
It will be appreciated by those skilled in the art that attached drawing is the schematic diagram of a preferred embodiment, the embodiments of the present invention
Serial number is for illustration only, does not represent the advantages or disadvantages of the embodiments.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of cascade trans-impedance amplifier bandwidth expansion circuit based on CMOS technology, which is characterized in that the circuit is
The full symmetric structure in left and right；
Wherein, the circuit of left-right parts includes：Traditional main cathode-input amplifier, novel cascade booster amplifier and end
Hold source follower three parts；
The circuit shields Miller effect using novel cascode structure booster amplifier；It is total by parallel PMOS structure
Grid NMOS tube provides bigger mutual conductance；
The circuit is added end source follower and rear class parasitic capacitance is isolated by π type matching network shielded segment parasitic capacitance,
Promote the overall bandwidth of circuit；
The circuit is effectively reduced input impedance using RGC structure, and preferably isolation is based on photodetector junction capacity
Input capacitance；
The circuit is adjusted and optimizes to component parameter, and uses differential configuration, significantly extends the work of circuit
Make bandwidth.
2. the cascade trans-impedance amplifier bandwidth expansion circuit according to claim 1 based on CMOS technology, feature
It is, the novel cascade booster amplifier is by transistor M22、M23、MP, resistance R23And inductance L1It constitutes；
Transistor M22Source electrode meets inductance L1One end, transistor M22Grounded drain；Inductance L1The other end meet transistor M respectively23
Drain electrode and transistor MPSource electrode, transistor M23Source electrode connecting resistance R23One end, resistance R23The other end, transistor MP's
Drain electrode meets power vd D, transistor MPGrounded-grid.
3. the cascade trans-impedance amplifier bandwidth expansion circuit according to claim 1 based on CMOS technology, feature
It is, the end source follower is by transistor M24With current source ISSIt constitutes；
Transistor M24Drain electrode meet current source ISSOne end, transistor M24Source electrode meet power vd D, transistor M24Grid connect
Transistor M21Source electrode, current source ISSThe other end ground connection.
4. the cascade trans-impedance amplifier bandwidth expansion circuit according to claim 2 based on CMOS technology, feature
It is, the output impedance of the novel cascade booster amplifier is：
Rout=(1+gm22ro3)ro2+ro3
Wherein, ro2、ro3Respectively transistor M22、M23Equivalent small signal resistance, gm22For transistor M22Mutual conductance.
5. the cascade trans-impedance amplifier bandwidth expansion circuit according to claim 4 based on CMOS technology, feature
It is, the introducing of the bank tube altogether is by output impedance by the r of traditional RGC structureo2Promote gm22ro3Times, the gain of amplifier obtains
Effective promotion.
6. the cascade trans-impedance amplifier bandwidth expansion circuit according to claim 4 based on CMOS technology, feature
Be, it is described influence RGC trans-impedance amplifier bandwidth pole it is main there are two：
Wherein, CpdFor the equivalent input capacitance of photodetector, CgdFor the gate leakage capacitance of transistor, CdbFor the drain electrode of transistor
Capacitor, CLFor rear class equivalent output capacitance；fp1It is mainly determined by the equivalent input capacitance of photodetector, fp2Mainly by rear class electricity
The output capacitance on road determines.
7. the cascade trans-impedance amplifier bandwidth expansion circuit according to claim 4 based on CMOS technology, feature
It is, cascade pole booster amplifier-three dB bandwidth is：
Wherein, s is multifrequency field parameter；Cgd21For transistor M21Gate leakage capacitance；Cdb21For transistor M21Drain capacitance；CLFor rear class etc.
Imitate output capacitance.
8. the cascade trans-impedance amplifier bandwidth expansion circuit according to claim 1 based on CMOS technology, feature
It is, PMOS tube M in parallelPIntroducing by the bandwidth of boost amplifier；MPWith M22Common-source amplifier is together constituted, can be anti-
Present transistor M23Bigger mutual conductance g is providedm23(gm22+gmP), so that input impedance becomes：
Wherein, gm21For transistor M21Mutual conductance；gm23For transistor M23Mutual conductance；gm22For transistor M22Mutual conductance；gmpFor transistor MP
Mutual conductance.
9. the cascade trans-impedance amplifier bandwidth expansion circuit according to claim 8 based on CMOS technology, feature
It is, the transfer function of novel difference cascode trans-impedance amplifier is specially：
Wherein,
K=Cgd24Cgs21(Cgs22gm24+Cpdgm22)；
M=L1gm23R22R23(gm21gm24Cd22+Cgs21gm22)
Wherein, gm24For transistor M24Mutual conductance；Cgd24For transistor M24Gate leakage capacitance；Cgs21For transistor M21Gate-source capacitance；Cgs22
For transistor M22Gate-source capacitance；CpdFor the equivalent input capacitance of photodetector；Cd22For transistor M22Drain capacitance.
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| CN110190821A (en) * | 2019-05-10 | 2019-08-30 | 南京牛芯微电子有限公司 | A kind of super trans-impedance amplifier of high sensitivity ultra wide band |
| CN110717242A (en) * | 2019-08-27 | 2020-01-21 | 西安电子科技大学 | InP HEMT device noise equivalent circuit model establishment method |
| CN110717242B (en) * | 2019-08-27 | 2021-11-02 | 西安电子科技大学 | InP HEMT device noise equivalent circuit model establishment method |
| CN112104330A (en) * | 2020-07-22 | 2020-12-18 | 西安交通大学 | Broadband high-gain flatness radio frequency/millimeter wave power amplifier |
| CN112104330B (en) * | 2020-07-22 | 2023-06-27 | 西安交通大学 | Broadband high-gain flatness radio frequency/millimeter wave power amplifier |
| CN112511111A (en) * | 2020-10-23 | 2021-03-16 | 上海磐启微电子有限公司 | Gain-adjustable low-noise amplifier adopting noise elimination technology |
| CN112511111B (en) * | 2020-10-23 | 2023-12-05 | 上海磐启微电子有限公司 | Gain-adjustable low-noise amplifier adopting noise elimination technology |
| CN113114162A (en) * | 2021-03-24 | 2021-07-13 | 中国电子科技集团公司第三十八研究所 | Attenuator circuit for CMOS broadband amplitude-phase multifunctional chip |
| CN117135478A (en) * | 2023-10-27 | 2023-11-28 | 南京大学 | Composite dielectric gate transistor pixel reading circuit based on double-transimpedance amplifier |
| CN117135478B (en) * | 2023-10-27 | 2024-03-15 | 南京大学 | Composite dielectric gate transistor pixel reading circuit based on double-transimpedance amplifier |
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Application publication date: 20181130 |