CN109510598A - A kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit - Google Patents
A kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit Download PDFInfo
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- CN109510598A CN109510598A CN201811369148.7A CN201811369148A CN109510598A CN 109510598 A CN109510598 A CN 109510598A CN 201811369148 A CN201811369148 A CN 201811369148A CN 109510598 A CN109510598 A CN 109510598A
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- phase inverter
- impedance amplifier
- circuit
- photoreceiver
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45051—Two or more differential amplifiers cascade coupled
Abstract
The invention discloses a kind of highly sensitive wide dynamic range photoreceiver pre-amplification circuit, including photodiode, trans-impedance amplifier, single-ended transfer difference amplifier, output buffer, peak detection circuit and direct current disappear mistuned circuit.The technical program is directed to the input stage trans-impedance amplifier of photoreceiver pre-amplification circuit, and novel three-level is devised to it and recommends inverter structure, has the characteristics that high-gain and low noise, improves the sensitivity of preamplifier；Virtual zero point is devised among feedback control loop, improves the operating rate of trans-impedance amplifier, increases stability；It is proposed a kind of new automatic gain control with adaptation function, so that trans-impedance amplifier keeps bandwidth constant under different optical input powers, loop stability has wide dynamic range characteristic.
Description
Technical field
The invention belongs to the integrated optoelectronic circuit fields in fiber optic communication, are related to Transresistance preamplifier circuit, specifically relate to
And a kind of highly sensitive wide dynamic range photoreceiver pre-amplification circuit.
Background technique
With the fast development of fiber optic communication, the extensive use of optic communication product is effectively pushed, while to its performance
It also proposed harsh requirement.Important component of the photoreceiver chip as optical communication system, performance (including it is sensitive
Degree, dynamic range etc.) it is related to the transmission quality of optical signal.Wherein, trans-impedance amplifier (Transimpedence Amp,
TIA) it is located at the front end of receiver, is most important chip in photoreceiver, its noise and dynamic range performance is directly determined
The sensitivity and dynamic range of photoreceiver are determined.It can be seen that the performance of trans-impedance amplifier largely determines light
The performance of receiver or even entire optical fiber telecommunications system.Therefore, researching and designing high speed, high-gain, low noise, wide dynamic range
Trans-impedance preamplifier, for improving the performance of photoreceiver, building high speed, large capacity, long-distance optical fiber communication system have
Important value, optical communication industry and IC industry to China all have highly important impetus.
Light pulse signal is usually converted to current pulse signal with photodiode by optical communication system.Trans-impedance amplifier
(TIA) this current pulse signal corresponding voltage pulse signal is converted to amplify and handle for subsequent circuit.Due to
The dynamic range of received photoelectric current is very big in actual use, and also corresponding requirements have very big input dynamic model to trans-impedance amplifier
It encloses.Therefore, trans-impedance amplifier will have corresponding automatic growth control (Automatic Gain Control, AGC) and direct current
Lack of proper care Regulation mechanism, but the DC maladjustment adjustment circuit of mainstream the noiseproof feature of circuit can usually be brought adverse effect or
Structure is excessively complicated.
Therefore, those skilled in the art is dedicated to developing a kind of low noise controlled with automatic growth control and DC maladjustment
Sound trans-impedance amplifier.
Summary of the invention
To solve the above-mentioned problems, the invention proposes a kind of highly sensitive preposition amplification electricity of wide dynamic range photoreceiver
Road can effectively solve the above problem.
The invention is realized by the following technical scheme:
A kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit, including it is photodiode, trans-impedance amplifier, single-ended
Turn difference amplifier, output buffer, peak detection circuit and direct current to disappear mistuned circuit；
The optical signal of different capacity is converted to electric current of corresponding size by the photodiode, and one end connects to power supply, separately
Disappear respectively with trans-impedance amplifier and direct current one end of mistuned circuit of one end is connect；
The front end of the trans-impedance amplifier is connect with photodiode, and the current signal that photodiode is transmitted is converted to
Voltage signal, and connect with single-ended transfer difference amplifier, differential signal is converted by single-ended transfer difference amplifier；
The rear end of the single-ended transfer difference amplifier and the output buffer of afterbody connect；The output of output buffer
Resistance is 50 Ω；
The front end of peak detection circuit is connect with trans-impedance amplifier, rear end respectively with output port VOPAnd VONConnection detects preposition
Amplifier output port VOPAnd VONVoltage swing, generate AGC voltageV AGC；
The direct current mistuned circuit that disappears is in parallel with trans-impedance amplifier, keeps the dc point of preamplifier input stage to stablize, input
Output voltage is equal.
Further, the trans-impedance amplifier includes that three-level recommends phase inverter and feed circuit；The three-level is recommended
Phase inverter is in parallel with feed circuit, and input terminal is connect with photodiode, and output end is connect with output port OUT.
Further, the feed circuit is by resistanceR FWith capacitorC FIt composes in parallel.
Further, it includes: that transistor MN1 and MP1 connect the first order reverse phase to be formed that the three-level, which recommends phase inverter,
Device, transistor MN2 and MP2 are connected the second level phase inverter to be formed, and transistor MN4 and MP4 connect the third level phase inverter to be formed,
The first order phase inverter, second level phase inverter are connected with third level inverter series.
Further, the front end of the first order phase inverter, second level phase inverter and third level phase inverter is separately connected
Transistor MN5, transistor MN6 and transistor MN7 form automatic gain control circuit.
Further, the output node of the second level phase inverter and third level phase inverter has been connected increased section respectively
Point.
Further, the increased node be the transistor MN3 being connected in series with the output node of second level phase inverter,
The node of transistor MP3, and the node with the concatenated transistor MP5 of output node of third level phase inverter.
Further, the first order recommends the channel width maximum of phase inverter, and phase inverter and third are recommended in the second level
The channel width that grade recommends phase inverter is equal, and is less than the channel width that the first order recommends phase inverter.
Further, in the trans-impedance amplifier circuit, the transistor channel length on main channel is all made of minimum gate
It is long.
Further, the single-ended transfer difference amplifier includes the input terminal connecting with the output end of trans-impedance amplifier
The reference voltage input and coupling circuit that mouth, DC voltage input, the output end of coupling circuit are connect with output buffer.
(3) beneficial effect
A kind of highly sensitive wide dynamic range photoreceiver pre-amplification circuit proposed by the present invention, compared with prior art,
It has the advantages that
(1) the technical program devises it novel for the input stage trans-impedance amplifier of the pre-amplification circuit of photoreceiver
Three-level recommends inverter structure, has the characteristics that high-gain and low noise, improves the sensitivity of preamplifier；In feedback control loop
Among devise virtual zero point, improve the operating rate of trans-impedance amplifier, increase stability；It is proposed a kind of new there is adaptive function
The automatic gain control of energy, so that trans-impedance amplifier keeps bandwidth constant under different optical input powers, loop stability, tool
There is wide dynamic range characteristic.
(2) transistor MN3, MP3 of series connection are increased in second level phase inverter and third level phase inverter output node
And MP5, node impedance is reduced, Miller effect is reduced.
(3) transistor MN5, the crystalline substance connected in first order phase inverter, second level phase inverter with the front end of third level phase inverter
Body pipe MN6 and transistor MN7 composition, forms the automatic gain control circuit of adaptation function, improves the input dynamic of circuit
Range.When input current is larger, in order to avoid trans-impedance amplifier enters saturation state, automatic growth control is activated,V AGCBecome
Greatly, transistor MN5, transistor MN6 and transistor MN7 enter linear zone, be equivalent toV AGCThe variable resistance for increasing and becoming smaller,
Automatic growth control when big signal is realized, guarantees that, in " activation " region, trans-impedance amplifier still maintains linear work.
(4) transistor channel length in trans-impedance amplifier circuit can be minimized on main channel using minimum grid length
Parasitic capacitance improves the rate of trans-impedance amplifier.
(5) first order recommends the size maximum of phase inverter, and the second level and third level phase inverter size are smaller and equal in magnitude
Design so that feedback loop passes through across resistanceR FDC offset voltage is provided, because inputting without electric current, RFThe voltage at both ends
Difference is almost nil, so the input and output DC voltage of trans-impedance amplifier is equal.
(6) feed circuit is by compensating electric capacityC FWith feedback resistanceR FParallel connection is constituted, and is not present among system transfer function,
It exists only in feedback network.It can be maximum under the premise of keeping trans-impedance amplifier stability without using inductance
Improve the operating rate of trans-impedance amplifier.And compensating electric capacity increases anti-under conditions of not changing circuit structure and gain
The damped coefficient for presenting loop, improves the stability of loop.
Detailed description of the invention
Fig. 1 is overall structure schematic block diagram of the invention.
Fig. 2 is the trans-impedance amplifier circuit diagram in the present invention.
Fig. 3 is bandwidth and stability analysis schematic diagram in the embodiment of the present invention.
Fig. 4 is the frequency response schematic diagram of the trans-impedance amplifier in the embodiment of the present invention.
Fig. 5 is frequency response signal of the trans-impedance amplifier under different AGC voltages in the embodiment of the present invention
Figure.
Label in attached drawing: feedback control voltageV AGC/ V:1-0.9；2—1.2；3—1.5.
Fig. 6 is single-ended transfer difference amplifier and output stage buffer circuit schematic diagram in the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.Described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.This is not being departed from
Under the premise of invention design concept, all variations and modifications that ordinary people in the field makes technical solution of the present invention,
Protection scope of the present invention should be dropped into.
Embodiment:
As shown in Figure 1, a kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit, mainly includes photodiode
(PD), trans-impedance amplifier (TIA), single-ended transfer difference amplifier (Single-ended to differential amplifier,
S-D Amp), output buffer (Driver), peak detection circuit (Peak-value detection, PVD) and direct current
The mistuned circuit that disappears (DC offset cancellation, DOC).
The optical signal of different capacity is converted to electric current of corresponding size by the photodiode PD, and one end and power supply connect
It connects, disappear respectively with trans-impedance amplifier (TIA) and direct current one end of mistuned circuit (DOC) of the other end is connect；
The front end of the trans-impedance amplifier (TIA) is connect with photodiode (PD), and photodiode (PD) is transmitted
Current signal is converted to voltage signal, and connect with single-ended transfer difference amplifier (S-D Amp), passes through single-ended transfer difference amplifier
(S-D Amp) is converted into differential signal；
The rear end of the single-ended transfer difference amplifier (S-D Amp) and the output buffer (Driver) of afterbody connect；
The output resistance of output buffer (Driver) is 50 Ω；
The front end of peak detection circuit (PVD) is connect with trans-impedance amplifier (TIA), rear end respectively with output port VOPAnd VONEven
It connects, detects preamplifier output port VOPAnd VONVoltage swing, generate AGC voltageV AGC；
The direct current mistuned circuit (DOC) that disappears is in parallel with trans-impedance amplifier (TIA), keeps the dc point of preamplifier input stage
Stablize, input and output voltage is equal.
As shown in Fig. 2, the trans-impedance amplifier circuit, the trans-impedance amplifier includes that three-level recommends phase inverter and anti-
Current feed circuit；The three-level recommends that phase inverter is in parallel with feed circuit, and input terminal is connect with photodiode, output end with it is defeated
Exit port OUT connection.The feed circuit is by resistanceR FWith capacitorC FIt composes in parallel.It includes: crystalline substance that the three-level, which recommends phase inverter,
The connect first order phase inverter to be formed, transistor MN2 and MP2 of body pipe MN1 and MP1 connects the second level phase inverter to be formed, crystal
Pipe MN4 and MP4 connect the third level phase inverter to be formed, the first order phase inverter, second level phase inverter and third level reverse phase
Device is connected in series.
The front end of the first order phase inverter, second level phase inverter and third level phase inverter has been separately connected transistor
MN5, transistor MN6 and transistor MN7 form automatic gain control circuit.The second level phase inverter and third level reverse phase
The output node of device has been connected increased node respectively.The increased node is to connect with the output node of second level phase inverter
The node of the transistor MN3 of connection, transistor MP3, and with the concatenated transistor MP5's of output node of third level phase inverter
Node.The channel width that the first order recommends phase inverter is maximum, and phase inverter is recommended in the second level and the third level recommends phase inverter
Channel width it is equal, and be less than the first order and recommend the channel width of phase inverter.In the trans-impedance amplifier circuit, main channel
On transistor channel length be all made of minimum grid length.
In Fig. 2, since photodiode prototype is complicated, it is in parallel with ideal current source to be reduced to parasitic capacitance.C INInclude
The parasitic capacitance of photodiode, trans-impedance amplifier input pin binding parasitic capacitance, input transistors parasitic capacitances etc., it
The maximum bandwidth of circuit is limited,I INFor the electric current for flowing through photodiode.Transistor MN1, transistor MN2, transistor MN4,
Transistor MP1, transistor MP2 and transistor MP4 constitute three-level and recommend phase inverter, resistanceR FWith capacitorC FConstitute feed circuit.Three
Grade recommends phase inverter and feed circuit constitutes trans-impedance amplifier, output port OUT.The second level and the output of third level phase inverter
Node increases transistor MN3, transistor MP3 and the transistor MP5 of diode connection type connection, reduces node impedance,
Reduce Miller effect.Transistor MN5, transistor MN6 and transistor MN7 composition have the automatic growth control of adaptation function
Circuit improves the input dynamic range of circuit.
As shown in fig. 6, the single-ended transfer difference amplifier includes the input terminal connecting with the output end of trans-impedance amplifier
The reference voltage input and coupling circuit that mouth, DC voltage input, the output end of coupling circuit are connect with output buffer.
Working principle:
When not considering compensating electric capacityC FInfluence when, at trans-impedance amplifier circuit input end, obtained by Kirchhoff's law:
(1)
In formula:V OUTSmall signal is exported for trans-impedance amplifier；I INFor PD Injection Current；AThe straight of phase inverter is recommended for three-level
Flow enhancement；R FFor across resistance；C INFor input node parasitic capacitance；sIt is argument of function.Formula (1) show whenAWhen > > 1, across
The intermediate frequency transimpedance gain of impedance amplifier TIA is approximately equal to across resistanceR F, it is seen that:
(2)
In formula:f -3dBFor trans-impedance amplifier-three dB bandwidth.
For giving transmission rate, it is desirable that trans-impedance amplifier-three dB bandwidth optimal value is about its 0.7 times (for 2.5Gbit/
S, optimal design-three dB bandwidth about 1.8GHz), by formula (2) it is found that for given-three dB bandwidth, across resistanceR FResistance value determine
Three-level recommends the DC current gain design objective of phase inverter.In order to minimize parasitic capacitance on main channel, trans-impedance amplifier is improved
Rate, all transistor channel lengths are using minimum grid lengths on trans-impedance amplifier circuit main channel.Feedback loop by across
ResistanceR FDC offset voltage is provided, because inputting without electric current, RFThe voltage difference at both ends is almost nil, so trans-impedance amplifier
Input and output DC voltage is equal.Circuit after optimization is the size maximum that the first order recommends phase inverter, and reverse phase is recommended in the second level
It is smaller and equal in magnitude that device with the third level recommends phase inverter size.
The main noise of trans-impedance amplifier is across resistanceR FNoise and amplifier noise, recommending phase inverter due to three-level has height
The characteristic of gain, therefore amplifier noise depends mainly on the noise of first order input transistors.The flicker noise of transistor is only
It only plays a major role in low frequency, therefore, they are negligible；It is available:
(3)
In formula:For equivalent inpnt reference current noise density；kFor Boltzmann constant；TFor temperature；g m1For input
Grade equivalent transconductance.By formula (3) it is found that input mutual conductanceg m1It is bigger, feedback resistanceR FBigger, the equivalent inpnt of trans-impedance amplifier is made an uproar
Acoustoelectric current is smaller.Three-level recommends that inverter structure is simple, does not need additional biasing circuit, for giving constant current, can provide most
Big mutual conductance, equivalent transconductance are equal to the summation of PMOS, NMOS tube mutual conductance.It is greater than the technique of 500MHz for gain bandwidth product, uses
Three-level is equivalent to recommend the cascade trans-impedance amplifier equivalent input noise current minimum of phase inverter, to have optimal noise-induced
Energy.
Increase across resistanceR FAlso it can reduce the equivalent input noise current of trans-impedance amplifier, but according to formula (2), keeping
Under the premise of trans-impedance amplifier bandwidth is constant, increase across resistanceR FNeed to increase the gain that three-level recommends phase inverterA.Three-level is recommended instead
Phase device gainAIncrease cause the decline of dominant pole, to reduce the stability of loop.Therefore, noiseproof feature and amplifier
Feedback loop stability should carry out stringent compromise.For 0.18um CMOS technology, trans-impedance amplifier after optimization is equivalent to make an uproar
Acoustic-electric current density simulation result as shown in figure 3, trans-impedance amplifier-three dB bandwidth within the scope of, trans-impedance amplifier minimum input make an uproar
Acoustic-electric current density is only 2.2, average equivalent input noise current density is only 5.4。
Since three-level is recommended inside phase inverter comprising three poles, the raising of bandwidth is limited.Diode connection type
Transistor MN3, transistor MP3 and transistor MP5, reduce the output impedance of the node, improve three-level and recommend phase inverter
The pole frequency of the second level and third level output node makes it be far longer than the pole frequency of first order output node and loop-
Three dB bandwidth.Three-level recommends phase inverter first order output node as dominant pole, if its Laplce's transfer function is
(4)
In formula:ω 0For the dominant pole of amplifier.When amplifier inputs small-signal current, transistor MN5, MN6 and MN7 are closed.
Do not consider compensating electric capacityC FInfluence, trans-impedance amplifier feedback factor is
(5)
In formula:For the voltage feedback factor of trans-impedance amplifier feedback control loop.Meanwhile for trans-impedance amplifier shown in Fig. 2
Circuit is obtained by Kirchhoff's second law:
(6)
Formula (4) and (5) are substituted into formula (6) to obtain:
(7)
According to basic Theory of Automatic Control, to a denominator shaped likeSecond order function,, that is, damp
Coefficient, it is necessary to be more than or equal to, if it is less than, transient response just will appear concussion.Trans-impedance amplifier is passed
Defeated function can obtain:
(8)
In formula:For the damped coefficient of trans-impedance amplifier transfer function.If, then
(9)
Three-level recommends phase inverter dominant pole 0Have to be larger than 2A/(R F C IN) trans-impedance amplifier feedback control loop could stablize.By formula
(2),ω 0Size limits the raising of TIA operating rate.The new compensation scheme that the technical program proposes does not use inductance,
Under the premise of keeping trans-impedance amplifier stability, the operating rate of trans-impedance amplifier can be improved to the greatest extent.Compensation electricity
HoldC FWith feedback resistanceR FParallel connection is constituted, and is not present among system transfer function, is existed only in feedback network.Consider to constitute
The compensating electric capacity of virtual zero pointC FIt influences.So formula (5) is
(10)
Compensating electric capacityC FConstitute the zero point being located in feedback factor, (hereafter known as virtual zero point.) obviously, virtual zero point reduces
The phase offset of feedback factor.Formula (10) are substituted into formula (6), can be obtained:
(11)
It considersC F<<C IN, can obtain
(12)
In formula:For the damped coefficient of feedback control loop after virtual zero point compensation.Compare formula (8) and formula (12), it is known that, compensation
Capacitor increases the damped coefficient of feedback control loop, improves the stabilization of loop under conditions of not changing circuit structure and gain
Property.Therefore, under conditions of three-level is recommended phase inverter gain bandwidth product and fixed, sample imaginary zero compensation technology is amplified across resistance
Device can recommend phase inverter gain by increasing three-levelA, operating rate is improved to 2.5Gbit/s.For 0.18um CMOS work
Skill, the frequency characteristic simulation result of trans-impedance amplifier as shown in figure 4, the trans-impedance amplifier-three dB bandwidth for using virtual zero point to compensate for
1.8GHz is 84.5dB Ω across resistance size.And if virtual zero point is not used to compensate, the increase of phase inverter gain causes under dominant pole
After drop, the frequency response of trans-impedance amplifier produces ringing, as shown in phantom in Figure 4.
As shown in Figure 1, AGC voltageV AGCIt is generated by PVD according to signal strength, foundationV AGCValue can will
Input photo-signal is divided into two regions: " inactive " region, " activation " region.In " inactive " region, photo-signal
It is small,V AGCIt is maintained at minimum value, transistor MN5, transistor MN6 and transistor MN7 are in off state, and trans-impedance amplifier is kept
Linear work, output voltage amplitude are linear with input current signal.And in " activation " region, input current is larger, is
Trans-impedance amplifier is avoided to enter saturation state, automatic growth control is activated,V AGCBecome larger, transistor MN5, transistor MN6 and
Transistor MN7 enters linear zone, be equivalent toV AGCThe variable resistance for increasing and becoming smaller realizes automatic gain when big signal
Control, guarantees that, in " activation " region, trans-impedance amplifier still maintains linear work.In " activation " region, transistor MN5, crystal
Pipe MN6 and transistor MN7 is opened.At this point,I INAnd it not all flows through across resistanceR F, wherein some alternating currentI 1Flow through crystal
Pipe MN5, andV AGCIt is bigger, thenI 1Shared ratio is bigger.Meanwhile transistor MN5, transistor MN6 and transistor MN7 are also reduced
Three-level recommends phase inverter overall gainA。
When the optical power of input increases, formula (11) becomes
(13)
In formula:βFor one by feedback voltageV AGCThe constant of decision, 0≤β≤1；A ACTIt is that three-level recommends phase inverter in " activation " area
The voltage gain in domain.From formula (13) as it can be seen that equivalent become original (1- β) times across resistance size, transistor MN6 and crystalline substance are not considered
The influence of body pipe MN7, the gain that three-level recommends phase inverter composition are
(14)
In formula:g m1, g m2With g m3The respectively equivalent transconductance of three-level phase inverter；R L1, R L2WithR L3It is three-level phase inverter respectively
Output node resistance sizes；R LFFor transistor MN5 equivalent linear area resistance, resistance value is by control voltageV AGCControl.Amplifier
Dominant pole size is
(15)
In formula:C N1For the equivalent capacity size of first order phase inverter output node.So
(16)
An as constant, if its size is constant η.Therefore, have,
(17)
In formula:For trans-impedance amplifier " activation " region damped coefficient.With the increase of trans-impedance amplifier input optical power, resistance
Buddhist nun's coefficientIt can't reduce, the automatic gain control circuit that the technical program proposes maintains TIA in whole bandwidth
Stablize.Fig. 5 shows frequency response characteristic of the trans-impedance amplifier under different AGC voltages.It can from Fig. 5
Out, the trans-impedance amplifier reach 40dB across resistance variation range, bandwidth remains 1.8GHz in entire variation range.If
Agc circuit does not have adaptation function, and the frequency response of trans-impedance amplifier will appear apparent ringing.
The workflow of single-ended transfer difference amplifier and output stage buffer circuit:
Difference channel has better common-mode rejection ratio and lower power supply noise than single-ended single channel.Output resistance size is 50 Ω
Buffer stage be also test circuit one of matching condition.Single-ended transfer difference amplifier circuit and output stage buffer circuit such as Fig. 6
It is shown.The single-end output signal of trans-impedance amplifier is inputted from the port IN of single-ended transfer difference amplifier, by AC coupled, with
Reference voltageV REFIt compares, is converted to differential signal.Afterbody is output buffer, output port VOPAnd VON, output
Resistance sizes are 50 Ω, meet the test condition of chip.
Claims (9)
1. a kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit, it is characterised in that: including photodiode, across
Impedance amplifier, single-ended transfer difference amplifier, output buffer, peak detection circuit and direct current disappear mistuned circuit；
The optical signal of different capacity is converted to electric current of corresponding size by the photodiode, and one end connects to power supply, separately
Disappear respectively with trans-impedance amplifier and direct current one end of mistuned circuit of one end is connect；
The front end of the trans-impedance amplifier is connect with photodiode, and the current signal that photodiode is transmitted is converted to
Voltage signal, and connect with single-ended transfer difference amplifier, differential signal is converted by single-ended transfer difference amplifier；
The rear end of the single-ended transfer difference amplifier and the output buffer of afterbody connect；The output of output buffer
Resistance is 50 Ω；
The front end of peak detection circuit is connect with trans-impedance amplifier, rear end respectively with output port VOPAnd VONConnection detects preposition
Amplifier output port VOPAnd VONVoltage swing, generate AGC voltageV AGC；
The direct current mistuned circuit that disappears is in parallel with trans-impedance amplifier, keeps the dc point of preamplifier input stage to stablize, input
Output voltage is equal.
2. a kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit according to right 1, it is characterised in that: institute
The trans-impedance amplifier stated includes that three-level recommends phase inverter and feed circuit；The three-level recommends phase inverter and feed circuit simultaneously
Connection, input terminal are connect with photodiode, and output end is connect with output port OUT.
3. a kind of highly sensitive wide dynamic range photoreceiver pre-amplification circuit according to claim 2, feature exist
In: the feed circuit is by resistanceR FWith capacitorC FIt composes in parallel.
4. a kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit according to right 2, it is characterised in that: three
Grade is recommended phase inverter and is made of transistor MN1, MN2, MN4, MP1, MP2 and MP4, and transistor MN5, MN6 and MN7 composition are automatic to be increased
Beneficial control circuit.
5. a kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit according to right 4, it is characterised in that: institute
The output node of the second level phase inverter and third level phase inverter stated has been connected increased node respectively.
6. a kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit according to right 5, it is characterised in that: institute
Stating increased node is the node with the transistor MN3 of the output node of second level phase inverter series connection, transistor MP3, with
And the node with the concatenated transistor MP5 of output node of third level phase inverter.
7. a kind of preposition amplification electricity of high sensitivity wide dynamic range photoreceiver according to any item of claim 4-6
Road, it is characterised in that: the channel width that the first order recommends phase inverter is maximum, and the second level is recommended phase inverter and pushed away with the third level
The channel width for drawing phase inverter is equal, and is less than the channel width that the first order recommends phase inverter.
8. a kind of preposition amplification electricity of high sensitivity wide dynamic range photoreceiver according to any item of claim 4-6
Road, it is characterised in that: in the trans-impedance amplifier circuit, the transistor channel length on main channel is all made of minimum grid length.
9. a kind of highly sensitive wide dynamic range photoreceiver pre-amplification circuit according to claim 1, feature exist
In: the single-ended transfer difference amplifier includes the input port connecting with the output end of trans-impedance amplifier, DC voltage input
Reference voltage input and coupling circuit, the output end of coupling circuit connect with output buffer.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111565030A (en) * | 2020-03-10 | 2020-08-21 | 东南大学 | Linear automatic gain control amplifier for detecting forward current in PAM4 optical receiver |
| CN111726099A (en) * | 2020-07-27 | 2020-09-29 | 厦门亿芯源半导体科技有限公司 | Accurate automatic gain control circuit |
| CN112865878A (en) * | 2019-11-12 | 2021-05-28 | 华为技术有限公司 | Receiver, optical line terminal and passive optical network system |
| CN113014217A (en) * | 2020-12-31 | 2021-06-22 | 中国科学院微电子研究所 | MEMS sensor driving circuit |
| CN113114118A (en) * | 2021-04-22 | 2021-07-13 | 西安交通大学 | Super differential trans-impedance amplifier structure and photodiode connection method |
| CN115173956A (en) * | 2022-07-26 | 2022-10-11 | 烽火通信科技股份有限公司 | Photoelectric detection receiver |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133691A1 (en) * | 2003-12-19 | 2005-06-23 | Infineon Technologies Ag | Optical receiver circuit |
| CN101651449A (en) * | 2009-09-03 | 2010-02-17 | 上海博为光电科技有限公司 | Optical input preamplifier for optical communication receiver |
| CN103956752A (en) * | 2014-04-11 | 2014-07-30 | 淮阴工学院 | Thyristor equal-voltage switching trigger circuit |
| CN104104339A (en) * | 2013-04-15 | 2014-10-15 | 西安电子科技大学 | High-gain and wide-dynamic-range CMOS (Complementary Metal-Oxide-Semiconductor) transimpedance amplifier |
| CN204046530U (en) * | 2014-04-04 | 2014-12-24 | 嘉兴禾润电子科技有限公司 | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof |
| CN106605365A (en) * | 2014-09-03 | 2017-04-26 | 三菱电机株式会社 | Optical receiver, optical termination device and optical communication system |
| CN107171646A (en) * | 2017-04-20 | 2017-09-15 | 西安交通大学 | A kind of trans-impedance amplifier and design method applied to high-speed light receiver |
| US20180131342A1 (en) * | 2016-11-09 | 2018-05-10 | Stmicroelectronics S.R.L. | Transimpedance amplifier circuit, related integrated circuit, receiver circuit and method of operating a transimpedance amplifier circuit |
-
2018
- 2018-11-16 CN CN201811369148.7A patent/CN109510598A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133691A1 (en) * | 2003-12-19 | 2005-06-23 | Infineon Technologies Ag | Optical receiver circuit |
| CN101651449A (en) * | 2009-09-03 | 2010-02-17 | 上海博为光电科技有限公司 | Optical input preamplifier for optical communication receiver |
| CN104104339A (en) * | 2013-04-15 | 2014-10-15 | 西安电子科技大学 | High-gain and wide-dynamic-range CMOS (Complementary Metal-Oxide-Semiconductor) transimpedance amplifier |
| CN204046530U (en) * | 2014-04-04 | 2014-12-24 | 嘉兴禾润电子科技有限公司 | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof |
| CN103956752A (en) * | 2014-04-11 | 2014-07-30 | 淮阴工学院 | Thyristor equal-voltage switching trigger circuit |
| CN106605365A (en) * | 2014-09-03 | 2017-04-26 | 三菱电机株式会社 | Optical receiver, optical termination device and optical communication system |
| US20180131342A1 (en) * | 2016-11-09 | 2018-05-10 | Stmicroelectronics S.R.L. | Transimpedance amplifier circuit, related integrated circuit, receiver circuit and method of operating a transimpedance amplifier circuit |
| CN107171646A (en) * | 2017-04-20 | 2017-09-15 | 西安交通大学 | A kind of trans-impedance amplifier and design method applied to high-speed light receiver |
Non-Patent Citations (2)
| Title |
|---|
| DIAA ABD-ELRAHMAN等: "10 Gb/s 1.95 mW active cascode transimpedance amplifier for high speed optical receivers", 《2016 IEEE 59TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS)》 * |
| 朱铁柱 等: "2.5 Gbit/s无电感高灵敏度宽动态范围前置放大器设计", 《中南大学学报(自然科学版)》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112865878A (en) * | 2019-11-12 | 2021-05-28 | 华为技术有限公司 | Receiver, optical line terminal and passive optical network system |
| CN112865878B (en) * | 2019-11-12 | 2022-08-19 | 华为技术有限公司 | Receiver, optical line terminal and passive optical network system |
| EP4024729A4 (en) * | 2019-11-12 | 2022-12-14 | Huawei Technologies Co., Ltd. | Receiver, optical line terminal and passive optical network system |
| TWI790498B (en) * | 2019-11-12 | 2023-01-21 | 大陸商華為技術有限公司 | Receiver, optical line terminal and passive optical network thereof |
| US11711152B2 (en) | 2019-11-12 | 2023-07-25 | Huawei Technologies Co., Ltd. | Receiver, optical line terminal, and passive optical network system |
| CN111565030A (en) * | 2020-03-10 | 2020-08-21 | 东南大学 | Linear automatic gain control amplifier for detecting forward current in PAM4 optical receiver |
| CN111565030B (en) * | 2020-03-10 | 2023-11-17 | 东南大学 | Linear Automatic Gain Control Amplifier for Forward Current Detection in PAM4 Optical Receiver |
| CN111726099A (en) * | 2020-07-27 | 2020-09-29 | 厦门亿芯源半导体科技有限公司 | Accurate automatic gain control circuit |
| CN113014217A (en) * | 2020-12-31 | 2021-06-22 | 中国科学院微电子研究所 | MEMS sensor driving circuit |
| CN113114118A (en) * | 2021-04-22 | 2021-07-13 | 西安交通大学 | Super differential trans-impedance amplifier structure and photodiode connection method |
| CN115173956A (en) * | 2022-07-26 | 2022-10-11 | 烽火通信科技股份有限公司 | Photoelectric detection receiver |
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