CN105187017B - A kind of wideband amplification circuit - Google Patents
A kind of wideband amplification circuit Download PDFInfo
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- CN105187017B CN105187017B CN201510564533.7A CN201510564533A CN105187017B CN 105187017 B CN105187017 B CN 105187017B CN 201510564533 A CN201510564533 A CN 201510564533A CN 105187017 B CN105187017 B CN 105187017B
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Abstract
The present invention relates to optoelectronic integrated circuit technology, and in particular to a kind of wideband amplification circuit.The broadband of the present invention includes the first trans-impedance amplifier, the first trsanscondutance amplifier, the second trsanscondutance amplifier, current mirror and the second trans-impedance amplifier across resistance amplifying circuit, wherein, the output of input the first trans-impedance amplifier of connection of first trsanscondutance amplifier, it exports the input of connection current mirror；Second trsanscondutance amplifier is the mirror image circuit of the first trsanscondutance amplifier, and it inputs the input of the first trans-impedance amplifier of connection, and it exports the first input end of the second trans-impedance amplifier of connection；Second input of output the second trans-impedance amplifier of connection of the current mirror.Beneficial effects of the present invention are, circuit input stage is used as using the less trans-impedance amplifier of gain, current gain is realized using current mirror, the gain of circuit can be improved while circuit bandwidth is improved, is made across resistance amplifying circuit while meeting the requirement of broadband and high-gain.
Description
Technical field
The invention belongs to optoelectronic integrated circuit technical field, more particularly to a kind of wideband amplification circuit.
Background technology
Optical communication system plays a very important role in modern society as the basis of Modern Communication System.It is logical in light
In letter system, preamplifier is the key component of photoreceiver, and it is the weak current arteries and veins for exporting photodiode that it, which is acted on,
Rush signal and be converted into certain voltage pulse signal.Improve the performance due to photoreceiver, must just improve preamplifier
Performance, this require preamplifier on the one hand have higher gain, to avoid the main amplifier influence of noise due to being followed by
Caused by signal to noise ratio decline；On the other hand, there is bandwidth as wide as possible under existing process, to meet system high-speed rate
Requirement.
Preamplifier generally selects the form of trans-impedance amplifier, and its basic structure is as shown in Figure 1.The gain of the amplifier
For：Its-three dB bandwidth is：
(wherein, CT=CPD+Ci,RF<<ARi,CPDIt is the parasitic capacitance of photodiode, CiIt is the input of basic amplifier
Electric capacity, RiIt is the input resistance of basic amplifier, RFIt is feedback resistance, is the voltage of intermediate frequency gain of basic amplifier), Ke Yizhi
Road：Feedback resistance is smaller, and the frequency band of trans-impedance amplifier is wider；CTSmaller, the frequency band of trans-impedance amplifier is wider；Feedback resistance is got over
Greatly, the gain of trans-impedance amplifier is bigger.The parasitic capacitance C of integrated photodiodePDIt is to determine, and it is general than larger, therefore
Circuit gain and broadband are mainly determined that the two is two conflicting requirements by feedback resistance.
In order to improve the gain of trans-impedance amplifier, a voltage amplifier is followed by trans-impedance amplifier, as shown in Figure 2.This
Kind using voltage-mode gain stage circuit structure bandwidth and gain it is compromise for the use of it is still limited, when voltage amplification factor compares
When big, the dominant pole position reach of amplifier causes bandwidth to decline, it is impossible to further to optimize bandwidth and the gain of circuit simultaneously.
The content of the invention
Bandwidth and gain restriction problem to be solved by this invention, existing aiming at above-mentioned trans-impedance amplifier, are carried
Go out a kind of use current-mode gain stage and can at the same meet broadband and high-gain across resistance amplifying circuit.
To achieve the above object, the present invention is adopted the following technical scheme that：
A kind of wideband amplification circuit, it is characterised in that including the first trans-impedance amplifier, the first trsanscondutance amplifier, second across
Amplifier, current mirror and the second trans-impedance amplifier are led, wherein, the input of first trans-impedance amplifier is wideband amplification circuit
Input, the output end of the second trans-impedance amplifier is output end of the broadband across resistance amplifying circuit；First trsanscondutance amplifier
Input connect the first trans-impedance amplifier output end, its output end connect current mirror input；Second mutual conductance is put
Big device is the mirror image circuit of the first trsanscondutance amplifier, and its input connects the input of the first trans-impedance amplifier, and its output end connects
Connect the first input end of the second trans-impedance amplifier；Second input of output the second trans-impedance amplifier of connection of the current mirror；
First trans-impedance amplifier includes the first NMOS tube MN1, the first PMOS MP1 and first resistor R1；Wherein,
One NMOS tube MN1 grid is connected with the first PMOS MP1 grid and first resistor R1 one end, the tie point be first across
The input of impedance amplifier；The drain electrode and the first PMOS MP1 drain electrode of the first resistor R1 other end and the first NMOS tube MN1
Connection, the tie point is the output end of the first trans-impedance amplifier；The MN1 source grounds of first NMOS tube；First PMOS MP1's
Source electrode connects power supply；
First trsanscondutance amplifier includes the second NMOS tube MN2, the second PMOS MP2, the 3rd PMOS MP3, the 4th
PMOS MP4, second resistance R2；Wherein, the second NMOS tube MN2 grid is used as the input of the first trsanscondutance amplifier and first
NMOS tube MN1 drain electrode connection, its drain electrode is connected with the second PMOS MP2 drain electrode and the 4th PMOS MP4 grid；Second
One end of PMOS MP2 grid and the 3rd PMOS MP3 grid, the 4th PMOS MP4 source electrode and second resistance R2
Connection；3rd PMOS MP3 drain electrode as the first trsanscondutance amplifier output end；Second NMOS tube MN2 source electrode and the 4th
PMOS MP4 grounded drain；Second PMOS MP2 source electrode and the 3rd PMOS MP3 source electrode and second resistance R2
The other end connects power supply；
Second trsanscondutance amplifier includes the 3rd NMOS tube MN3, the 5th PMOS MP5, the 6th PMOS MP6, the 7th
PMOS MP7 and 3rd resistor R3；Wherein, the 3rd NMOS tube MN3 grid is used as the input of the second trsanscondutance amplifier and
One NMOS tube MN1 grid connection, its drain electrode is connected with the 5th PMOS MP5 drain electrode and the 7th PMOS MP7 grid；The
The one of five PMOS MP5 grid and the 6th PMOS MP6 grid, the 7th PMOS MP7 source electrode and 3rd resistor R3
End connection；6th PMOS MP6 drain electrode as the second trsanscondutance amplifier output end；3rd NMOS tube MN3 source electrode and
Seven PMOS MP7 grounded drain；5th PMOS MP5 source electrode and the 6th PMOS MP6 source electrode and 3rd resistor R3
The other end connection power supply；
The current mirror includes the 4th NMOS tube MN4 and the 5th NMOS tube MN5；Wherein, the 4th NMOS tube MN4 drain electrode is made
For the input of current mirror and the 3rd PMOS MP3 drain electrode and it is connected, its grid and drain electrode and the 5th NMOS tube MN5 grid
Connection；5th NMOS tube MN5 drain electrode as current mirror output end；4th NMOS tube MN4 source electrode and the 5th NMOS tube MN5
Source ground；
Second trans-impedance amplifier includes the 8th PMOS MP8, the 6th NMOS tube MN6, the first diode D1, the two or two
Pole pipe D2 and the 4th resistance R4；Wherein, the 8th PMOS MP8 grid connects as the first input end of the second trans-impedance amplifier
Connect the 6th PMOS MP6 drain electrode and the first diode D1 positive pole；6th NMOS tube MN6 grid amplifies as second across resistance
Second input of device, the 5th NMOS tube MN5 of connection drain electrode and the second diode D2 negative pole；First diode D1 negative pole
Connect the second diode D2 positive pole and the 4th resistance R4 one end；The 4th resistance R4 other end connects the 8th PMOS MP8
Drain electrode and the 6th NMOS tube MN6 drain electrode, and be used as the output of the second trans-impedance amplifier；6th NMOS tube MN6 source electrode connects
Ground；8th PMOS MP8 source electrode connects power supply.
Beneficial effects of the present invention are, with the less trans-impedance amplifier of gain as circuit input stage, using current mirror come
Current gain is realized, the gain of circuit can be improved while circuit bandwidth is improved, is made across resistance amplifying circuit while meeting width
The requirement of band and high-gain.
Brief description of the drawings
Fig. 1 is basic trans-impedance amplifier logical construction schematic diagram；
Fig. 2 is high-gain trans-impedance amplifier logical construction schematic diagram；
Fig. 3 is the broadband of the present invention across resistance amplifying circuit logical construction schematic diagram；
Fig. 4 is the broadband of the present invention across resistance amplification circuit structure schematic diagram.
Embodiment
With reference to the accompanying drawings and examples, technical scheme is described in detail：
As shown in figure 3, for the present invention broadband across resistance amplifying circuit logical construction schematic diagram, including first across resistance amplification
Device, the first trsanscondutance amplifier, the second trsanscondutance amplifier and the second trans-impedance amplifier of mirror image, as shown in figure 4, in the width of the present invention
Band is across in resistance amplification circuit structure, in addition to current mirror.Wherein, the transimpedance gain of the first trans-impedance amplifier is smaller, with ensure compared with
Wide bandwidth, its open-loop voltage gain is-A1, feedback resistance is R1.Second trsanscondutance amplifier of the first trsanscondutance amplifier and mirror image
Realized by V-I change-over circuits and current mirror, wherein, current mirror provides larger gain.The mutual conductance of trsanscondutance amplifier is, wherein V-
The mutual conductance of I change-over circuits is gm, current mirror multiplication factor is B.The transimpedance gain of second trans-impedance amplifier is also smaller, equally with guarantor
The wider bandwidth of card, its open-loop voltage gain is-A2, feedback resistance is R4.
As shown in figure 4, be the specific circuit diagram of the present invention, including the first trans-impedance amplifier, the first trsanscondutance amplifier, the
Two trsanscondutance amplifiers, current mirror and the second trans-impedance amplifier, wherein, the input of first trans-impedance amplifier is broadband amplification
The input of circuit, the output end of the second trans-impedance amplifier is output end of the broadband across resistance amplifying circuit；First mutual conductance is put
The input of big device connects the output end of the first trans-impedance amplifier, and its output end connects the input of current mirror；Described second across
The mirror image circuit that amplifier is the first trsanscondutance amplifier is led, its input connects the input of the first trans-impedance amplifier, and it is exported
The first input end of the second trans-impedance amplifier of end connection；Second input of output the second trans-impedance amplifier of connection of the current mirror
End；
First trans-impedance amplifier includes the first NMOS tube MN1, the first PMOS MP1 and first resistor R1；Wherein,
One NMOS tube MN1 grid is connected with the first PMOS MP1 grid and first resistor R1 one end, the tie point be first across
The input of impedance amplifier；The drain electrode and the first PMOS MP1 drain electrode of the first resistor R1 other end and the first NMOS tube MN1
Connection, the tie point is the output end of the first trans-impedance amplifier；The MN1 source grounds of first NMOS tube；First PMOS MP1's
Source electrode connects power supply；
First trsanscondutance amplifier includes the second NMOS tube MN2, the second PMOS MP2, the 3rd PMOS MP3, the 4th
PMOS MP4, second resistance R2；Wherein, the second NMOS tube MN2 grid is used as the input of the first trsanscondutance amplifier and first
NMOS tube MN1 drain electrode connection, its drain electrode is connected with the second PMOS MP2 drain electrode and the 4th PMOS MP4 grid；Second
One end of PMOS MP2 grid and the 3rd PMOS MP3 grid, the 4th PMOS MP4 source electrode and second resistance R2
Connection；3rd PMOS MP3 drain electrode as the first trsanscondutance amplifier output end；Second NMOS tube MN2 source electrode and the 4th
PMOS MP4 grounded drain；Second PMOS MP2 source electrode and the 3rd PMOS MP3 source electrode and second resistance R2
The other end connects power supply；
Second trsanscondutance amplifier includes the 3rd NMOS tube MN3, the 5th PMOS MP5, the 6th PMOS MP6, the 7th
PMOS MP7 and 3rd resistor R3；Wherein, the 3rd NMOS tube MN3 grid is used as the input of the second trsanscondutance amplifier and
One NMOS tube MN1 grid connection, its drain electrode is connected with the 5th PMOS MP5 drain electrode and the 7th PMOS MP7 grid；The
The one of five PMOS MP5 grid and the 6th PMOS MP6 grid, the 7th PMOS MP7 source electrode and 3rd resistor R3
End connection；6th PMOS MP6 drain electrode as the second trsanscondutance amplifier output end；3rd NMOS tube MN3 source electrode and
Seven PMOS MP7 grounded drain；5th PMOS MP5 source electrode and the 6th PMOS MP6 source electrode and 3rd resistor R3
The other end connection power supply；
The current mirror includes the 4th NMOS tube MN4 and the 5th NMOS tube MN5；Wherein, the 4th NMOS tube MN4 drain electrode is made
For the input of current mirror and the 3rd PMOS MP3 drain electrode and it is connected, its grid and drain electrode and the 5th NMOS tube MN5 grid
Connection；5th NMOS tube MN5 drain electrode as current mirror output end；4th NMOS tube MN4 source electrode and the 5th NMOS tube MN5
Source ground；
Second trans-impedance amplifier includes the 8th PMOS MP8, the 6th NMOS tube MN6, the first diode D1, the two or two
Pole pipe D2 and the 4th resistance R4；Wherein, the 8th PMOS MP8 grid connects as the first input end of the second trans-impedance amplifier
Connect the 6th PMOS MP6 drain electrode and the first diode D1 positive pole；6th NMOS tube MN6 grid amplifies as second across resistance
Second input of device, the 5th NMOS tube MN5 of connection drain electrode and the second diode D2 negative pole；First diode D1 negative pole
Connect the second diode D2 positive pole and the 4th resistance R4 one end；The 4th resistance R4 other end connects the 8th PMOS MP8
Drain electrode and the 6th NMOS tube MN6 drain electrode, and be used as the output of the second trans-impedance amplifier；6th NMOS tube MN6 source electrode connects
Ground；8th PMOS MP8 source electrode connects power supply.
The present invention operation principle be：
The input stage of circuit is the first trans-impedance amplifier, and the weak current pulse signal that photodiode is exported tentatively is turned
Change certain voltage pulse signal into.Wherein, the first NMOS tube MN1 and the first PMOS MP1 compositions inverting amplifier, its voltage
Gain is A1=(gm,MN1+gm,MP1)×(ro,MN1||ro,MP1).First resistor R1 is connected across inverting amplifier as feedback resistance
Input and output end, constitute trans-impedance amplifier.Due to the parasitic capacitance C of photodiodePDIt is general than larger, input is
Dominant pole：
Wherein, CT=CPD+Ci,CPDIt is the parasitic capacitance of photodiode, Usual CPD>>Ci。
Because the gain of the first trans-impedance amplifier is limited, anti-phase voltage pulse can be then formed in its input and output end
Signal, the first trsanscondutance amplifier and the second trsanscondutance amplifier of next stage are separately input to as differential signal, then can be more accurate
Obtain sampling feedback resistance R1On voltage.The gain of first trans-impedance amplifier is smaller, and the voltage pulse signal of input is then bigger,
Contribution of second trsanscondutance amplifier to whole circuit gain is bigger.
The second level of circuit second trsanscondutance amplifier of mirror image for the first trsanscondutance amplifier and therewith.The trsanscondutance amplifier by
V-I change-over circuits and current mirror composition.V-I change-over circuits are realized by the second NMOS tube MN2 and the 3rd NMOS tube MN3 respectively.The
Two PMOS MP2, the 3rd PMOS MP3, the 4th PMOS MP4 and second resistance R2 composition current mirrors, wherein MP4 and R2 compositions
β-helper structures can raise the limit of loop, increase bandwidth.
The third level of circuit is current mirror, is realized by the 4th NMOS tube MN4 and the 5th NMOS tube MN5.The electricity of the current mirror
Traffic mirroring ratio is 1:1, realize the summation of the first trsanscondutance amplifier and the second trsanscondutance amplifier output current.
Circuit output stage is the second trans-impedance amplifier, similar with the first trans-impedance amplifier structure.Difference is to increase
Diode D1 and D2 can reduce V respectivelysg,MP8And Vgs,MN6, so as to reduce circuit power consumption.6th NMOS tube MN6 and the 8th
PMOS MP8 constitutes inverting amplifier, and its voltage gain is A2=(gm,MN6+gm,MP8)×(ro,MN6||ro,MP8), at output
Limit is
Wherein, Cout≈CL+Cgd,MN6+Cgd,MP8, CLIt is the load capacitance across resistance amplifying circuit.
It can be drawn by formula (1) (2), the bandwidth of wideband amplification circuit of the invention is mainly determined by feedback resistance R1 and R4
It is fixed, therefore, as long as suitably reducing feedback resistance R1 and R4, with regard to suitable circuit bandwidth can be obtained.
The broadband of the present invention is across the transimpedance gain of resistance amplifying circuit：
It is can be seen that from formula (3) after feedback resistance R1 and R4 are set, the increasing of the invention across resistance amplifying circuit
Benefit is mainly determined by current mirror mirroring ratios B.Rational current mirror ratio B is appropriately arranged with, with regard to larger gain can be obtained.
Therefore, optimize R1, R4 and B value, can make across resistance amplifying circuit while meeting the requirement of broadband and high-gain.
Claims (1)
1. a kind of wideband amplification circuit, it is characterised in that including the first trans-impedance amplifier, the first trsanscondutance amplifier, the second mutual conductance
Amplifier, current mirror and the second trans-impedance amplifier, wherein, the input of first trans-impedance amplifier is wideband amplification circuit
Input, the output end of the second trans-impedance amplifier is output end of the broadband across resistance amplifying circuit；First trsanscondutance amplifier
Input connects the output end of the first trans-impedance amplifier, and its output end connects the input of current mirror；The second mutual conductance amplification
Device is the mirror image circuit of the first trsanscondutance amplifier, and its input connects the input of the first trans-impedance amplifier, the connection of its output end
The first input end of second trans-impedance amplifier；Second input of output the second trans-impedance amplifier of connection of the current mirror；
First trans-impedance amplifier includes the first NMOS tube MN1, the first PMOS MP1 and first resistor R1；Wherein, first
NMOS tube MN1 grid is connected with the first PMOS MP1 grid and first resistor R1 one end, and the tie point is first across resistance
The input of amplifier；The first resistor R1 other end and the first NMOS tube MN1 drain electrode and the first PMOS MP1 drain electrode connect
Connect, the tie point is the output end of the first trans-impedance amplifier；The MN1 source grounds of first NMOS tube；First PMOS MP1 source
Pole connects power supply；
First trsanscondutance amplifier includes the second NMOS tube MN2, the second PMOS MP2, the 3rd PMOS MP3, the 4th PMOS
Pipe MP4, second resistance R2；Wherein, the second NMOS tube MN2 grid as the first trsanscondutance amplifier input and the first NMOS
Pipe MN1 drain electrode connection, its drain electrode is connected with the second PMOS MP2 drain electrode and the 4th PMOS MP4 grid；2nd PMOS
Pipe MP2 grid is connected with the 3rd PMOS MP3 grid, the 4th PMOS MP4 source electrode and second resistance R2 one end；
3rd PMOS MP3 drain electrode as the first trsanscondutance amplifier output end；Second NMOS tube MN2 source electrode and the 4th PMOS
MP4 grounded drain；Second PMOS MP2 source electrode and the 3rd PMOS MP3 source electrode and the second resistance R2 other end
Connect power supply；
Second trsanscondutance amplifier includes the 3rd NMOS tube MN3, the 5th PMOS MP5, the 6th PMOS MP6, the 7th PMOS
Pipe MP7 and 3rd resistor R3；Wherein, the 3rd NMOS tube MN3 grid is used as the input of the second trsanscondutance amplifier and first
NMOS tube MN1 grid connection, its drain electrode is connected with the 5th PMOS MP5 drain electrode and the 7th PMOS MP7 grid；5th
One end of PMOS MP5 grid and the 6th PMOS MP6 grid, the 7th PMOS MP7 source electrode and 3rd resistor R3
Connection；6th PMOS MP6 drain electrode as the second trsanscondutance amplifier output end；3rd NMOS tube MN3 source electrode and the 7th
PMOS MP7 grounded drain；5th PMOS MP5 source electrode and the 6th PMOS MP6 source electrode and 3rd resistor R3
The other end connects power supply；
The current mirror includes the 4th NMOS tube MN4 and the 5th NMOS tube MN5；Wherein, the 4th NMOS tube MN4 drain electrode is used as electricity
Flow input and the 3rd PMOS MP3 of mirror drain electrode and be connected, its grid and drain electrode and the 5th NMOS tube MN5 grid company
Connect；5th NMOS tube MN5 drain electrode as current mirror output end；4th NMOS tube MN4 source electrode and the 5th NMOS tube MN5's
Source ground；
Second trans-impedance amplifier includes the 8th PMOS MP8, the 6th NMOS tube MN6, the first diode D1, the second diode
D2 and the 4th resistance R4；Wherein, the 8th PMOS MP8 grid is used as the first input end of the second trans-impedance amplifier, connection the
Six PMOS MP6 drain electrode and the first diode D1 positive pole；6th NMOS tube MN6 grid is used as the second trans-impedance amplifier
Second input, the 5th NMOS tube MN5 of connection drain electrode and the second diode D2 negative pole；First diode D1 negative pole connection
Second diode D2 positive pole and the 4th resistance R4 one end；The 4th resistance R4 other end connects the 8th PMOS MP8 leakage
Pole and the 6th NMOS tube MN6 drain electrode, and it is used as the output of the second trans-impedance amplifier；6th NMOS tube MN6 source ground；The
Eight PMOS MP8 source electrode connects power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510564533.7A CN105187017B (en) | 2015-09-07 | 2015-09-07 | A kind of wideband amplification circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510564533.7A CN105187017B (en) | 2015-09-07 | 2015-09-07 | A kind of wideband amplification circuit |
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| CN105187017A CN105187017A (en) | 2015-12-23 |
| CN105187017B true CN105187017B (en) | 2017-11-03 |
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| CN201510564533.7A Expired - Fee Related CN105187017B (en) | 2015-09-07 | 2015-09-07 | A kind of wideband amplification circuit |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106253870B (en) * | 2016-07-19 | 2018-09-21 | 电子科技大学 | A kind of high-gain trans-impedance amplifier with automatic growth control |
| CN106018926B (en) * | 2016-08-05 | 2018-08-31 | 电子科技大学 | A kind of micro-current sensing circuit |
| CN106505991A (en) * | 2016-10-26 | 2017-03-15 | 电子科技大学 | A kind of high bandwidth circuit current sensor interface circuitry |
| CN109167583B (en) * | 2018-10-31 | 2024-07-16 | 上海海栎创科技股份有限公司 | Transconductance amplifier |
| CN111900945B (en) * | 2020-06-22 | 2022-11-04 | 东南大学 | Transimpedance amplifier applied to current mode passive mixer |
| CN113114143B (en) * | 2021-05-10 | 2024-02-13 | 上海传泰电子科技有限公司 | Full-differential summation amplifying circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7532045B1 (en) * | 2005-02-08 | 2009-05-12 | Sitel Semiconductor B.V. | Low-complexity active transconductance circuit |
| CN102820857A (en) * | 2012-06-25 | 2012-12-12 | 东南大学 | Transimpedance amplifier with broad band and high gain, design method and amplifier chip |
| CN103368506A (en) * | 2013-07-31 | 2013-10-23 | 中国科学院微电子研究所 | Broadband variable gain amplifier |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6717474B2 (en) * | 2002-01-28 | 2004-04-06 | Integrated Programmable Communications, Inc. | High-speed differential to single-ended converter |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7532045B1 (en) * | 2005-02-08 | 2009-05-12 | Sitel Semiconductor B.V. | Low-complexity active transconductance circuit |
| CN102820857A (en) * | 2012-06-25 | 2012-12-12 | 东南大学 | Transimpedance amplifier with broad band and high gain, design method and amplifier chip |
| CN103368506A (en) * | 2013-07-31 | 2013-10-23 | 中国科学院微电子研究所 | Broadband variable gain amplifier |
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