CN106018926B - A kind of micro-current sensing circuit - Google Patents
A kind of micro-current sensing circuit Download PDFInfo
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- CN106018926B CN106018926B CN201610640211.0A CN201610640211A CN106018926B CN 106018926 B CN106018926 B CN 106018926B CN 201610640211 A CN201610640211 A CN 201610640211A CN 106018926 B CN106018926 B CN 106018926B
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- nmos tube
- trans
- impedance amplifier
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
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- General Physics & Mathematics (AREA)
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Abstract
The invention belongs to the invention belongs to electronic circuit technology fields, it is related to a kind of micro-current sensing circuit.The high speed weak current detector circuit suitable for bulky capacitor of the present invention is divided into prime trans-impedance amplifier, voltage current adapter and rear class trans-impedance amplifier three-level, prime trans-impedance amplifier be low input impedance, low gain trans-impedance amplifier, a part of gain of circuit is realized under sufficiently wide bandwidth, the bulky capacitor of isolation input node inhibits the noise of the first order；Intergrade is Voltage to current transducer grade, and the voltage signal that first order trans-impedance amplifier exports is converted into current signal, is handled convenient for rear class trans-impedance amplifier；Rear class trans-impedance amplifier is high-gain trans-impedance amplifier, provides certain gain for circuit and increases circuit drives ability.To which bandwidth and high-gain may be implemented in overall architecture.
Description
Technical field
The invention belongs to electronic circuit technology fields, are related to a kind of micro-current sensing circuit.
Background technology
In high-speed sensor integrated circuit, sensor receives the often faint electric current letter generated after other non-electrical signals
Number, meanwhile, these sensor front end parasitic capacitances are larger.Especially in high speed optoelectronic integrated circuit, photodiode receives
Faint current signal is generated after optical signal.Information is handled for the ease of late-class circuit, needs to convert suitably current signal to
The voltage signal of amplitude, therefore it is required that prime Weak current signal detection circuit has larger gain；And in view of sensor front end is posted
In the case that raw capacitance, especially capacitance are larger so that integrated circuit cannot obtain high gain and big bandwidth simultaneously, especially
Requiring integrated circuit that there is preferable noiseproof feature, gain and the compromise of bandwidth are more obvious.
The parasitic capacitance of the preferable isolated preceding-terminal sensor of adjustable type cascade (RGC) circuit structure energy, but noise
Poor performance；Other current detection circuits are generally only suitable for the smaller situation of parasitic capacitance.
Invention content
It is to be solved by this invention, high-gain and height can not be realized simultaneously aiming at above-mentioned existing micro-current sensing circuit
The limitation of bandwidth, problem especially not wide enough in the big bandwidth of photoelectric tube parasitic capacitance.Propose a kind of be suitable for greatly
The high speed weak current detector circuit of capacitance.
The technical scheme is that：A kind of high speed weak current detector circuit suitable for bulky capacitor, including prime across
Impedance amplifier, voltage current adapter, rear class trans-impedance amplifier and biasing circuit；The prime trans-impedance amplifier is by first resistor
R1, second resistance R2,3rd resistor RF1, the first capacitance CF1, the first NMOS tube MN1 and the second NMOS tube MN2 are constituted；First
The grid of NMOS tube MN1 is detection current input terminal, and the drain electrode of the first NMOS tube MN1 is followed by power supply by first resistor R1, the
The source electrode of one NMOS tube MN1 is grounded；The grid of second NMOS tube MN2 meets the drain electrode of the first NMOS tube MN1, the second NMOS tube MN2
Drain electrode connect power supply, the source electrode of the second NMOS tube MN2 after second resistance R2 by being grounded；The grid of first NMOS tube MN1 passes through
3rd resistor RF1 is followed by the tie point of the second NMOS tube M2 source electrodes and second resistance R2；First capacitance CF1 and 3rd resistor RF1
It is in parallel.The voltage current adapter is by the 4th resistance R3, the second capacitance C1, third NMOS tube MN3, the 4th NMOS tube MN4,
Five NMOS tube MN5, the first PMOS tube MP1, the second PMOS tube MP2 and operational amplifier are constituted；The in-phase end of operational amplifier is
The reverse side of the input terminal of voltage current adapter, operational amplifier passes sequentially through the 4th resistance R3 and the second capacitance C1 ground connection,
The grid of the output termination third NMOS tube MN3 of operational amplifier；The drain electrode of third NMOS tube MN3 connects the first PMOS tube MP1's
Drain electrode, the source electrode of third NMOS tube MN3 connect the drain electrode of the 4th NMOS tube MN4；The source electrode of 4th NMOS tube MN4 is grounded, and the 4th
The grid of NMOS tube MN4 connects the grid of the 5th NMOS tube MN5；The drain electrode of 5th NMOS tube MN5 connects the leakage of the second PMOS tube MP2
Pole, the source electrode ground connection of the 5th NMOS tube MN5；The source electrode of first PMOS tube MP1 connects power supply, and the grid of the first PMOS tube MP1 connects
The grid of two PMOS tube MP2；The source electrode of second PMOS tube MP2 connects power supply, drain electrode and the 5th NMOS tube of the second PMOS tube MP2
The drain electrode of MN5 is connected, and is the output IOUT1 of voltage current adapter.The rear class trans-impedance amplifier is that a standard is amplified across resistance
Device.
Beneficial effects of the present invention are that the high speed weak current detector circuit suitable for bulky capacitor of the invention is divided into prime
Trans-impedance amplifier, voltage current adapter and rear class trans-impedance amplifier three-level, prime trans-impedance amplifier are low input impedance, low increasing
The trans-impedance amplifier of benefit realizes that a part of gain of circuit, the bulky capacitor of isolation input node inhibit under sufficiently wide bandwidth
The noise of the first order；Intergrade is Voltage to current transducer grade, and the voltage signal that first order trans-impedance amplifier exports is converted into electricity
Signal is flowed, is handled convenient for rear class trans-impedance amplifier；Rear class trans-impedance amplifier is high-gain trans-impedance amplifier, is provided centainly for circuit
Gain and increase circuit drives ability.To which bandwidth and high-gain may be implemented in overall architecture.
Description of the drawings
Fig. 1 is micro-current sensing circuit frame proposed by the invention；
Fig. 2 for the shifted to an earlier date grade trans-impedance amplifier of the present invention a kind of example circuit；
Fig. 3 is carried voltage current adapter electrical block diagram by the present invention；
Fig. 4 is rear class trans-impedance amplifier electrical block diagram proposed by the invention.
Specific implementation mode
Below in conjunction with the accompanying drawings, detailed description of the present invention technical solution：
In the present invention, it is contemplated that signal input node parasitic capacitance is big, can seriously affect the gain bandwidth of trans-impedance amplifier
Product, can not be under the premise of meeting transmission speed, and weak current signal is amplified to the suitable voltage signal of output by a step.Therefore,
As shown in Figure 1, the present invention will be divided into prime across resistance realizes total transimpedance gain across resistance and rear class trans-impedance amplifier two-stage, front and back two
Grade is connected between resistance with a voltage-current converter circuit.Prime trans-impedance amplifier be low input impedance, low gain across resistance
Amplifier realizes that a part of gain of circuit, the bulky capacitor of isolation input node inhibit the first order under sufficiently wide bandwidth
Noise；Since prime is voltage signal across the signal of resistance output, in order to which rear class can continue normally to amplify across resistance, voltage is added in centre
The voltage signal that prime exports is converted into current signal by current converter circuit, meanwhile, voltage-current converter circuit can provide one
Fixed current gain；Prime is still smaller across the voltage signal of resistance output, and rear class realizes that difficulty is big with voltage amplifier, because hereafter
Grade selection trans-impedance amplifier.Material is thus formed the circuit structures that circuit structure shown in Fig. 1 and the present invention are protected.Multistage is put
Big device noise coefficient calculates formula
Wherein NFxFor the noise coefficient of xth grade amplifier, GxFor the gain of xth grade amplifier.It can be with by above formula
It obtains, the overall noise factor of casacade multi-amplifier depends primarily on the noise coefficient of the first order, and subsequent amplifier is to total
Noise coefficient influences smaller.For the first order, noise coefficient should be small as possible, and gain is big as possible.In the present invention, due to input
Node parasitic capacitance is big, therefore to obtain enough bandwidth, gain cannot be too big, can only reduce prime trans-impedance amplifier as possible
Noise coefficient.Common source configuration circuit has the characteristics that noise is small, therefore the present invention selects common source configuration to be put across resistance as the first order
Big device.Since protected is a kind of architecture and method to the present invention, and it is not limited to specific trans-impedance amplifier physical circuit.For
Convenient for illustrating and understanding present disclosure, herein only with prime trans-impedance amplifier shown in Fig. 2 for an example, the present invention is illustrated
Benefit.Certain present invention can also be realized using other specific trans-impedance amplifier structures.Prime shown in Fig. 2 is amplified across resistance
The transimpedance gain of device is RF1, bandwidth is：
CpFor input terminal parasitic capacitance, gmn1It is NMOS tube M1 across resistance.
The equivalent noise to input terminal is
It is obtained by bandwidth formula and input noise formula, by increasing gmn1And R1Bandwidth can be increased simultaneously and attenuating is made an uproar
Sound, in conjunction with transimpedance gain RF1, prime trans-impedance amplifier can be made to meet bandwidth demand, while possessing sufficiently low noise
Coefficient.
As shown in figure 3, in voltage-current converter circuit, NMOS tube MN4 and MN5 provides direct current biasing, PMOS tube for circuit
MP1 and MP2 is current mirror, transformed electric current is output to rear class, and provide certain current gain.Voltage-current converter circuit
Mutual conductance is gm=VIN1/R3。
From the point of view of comprehensive prime trans-impedance amplifier and voltage current adapter, it is accomplished that the function of Current amplifier, electric current increase
Benefit is gm=mRF1/R3, m is the ratio between the breadth length ratio of the breadth length ratio and MP1 of PMOS tube MP2.
Rear class trans-impedance amplifier is traditional trans-impedance amplifier, but since sensor parasitic capacitance is isolated, rear class
Trans-impedance amplifier input node parasitic capacitance is the parasitic capacitance of front stage circuits efferent duct, therefore bandwidth is
Cdb.MP2For the capacitance between PMOS tube MP2 drain electrodes and substrate, Cdb.MN5Between NMOS tube MN5 drain electrodes and substrate
Capacitance, Cin2For rear class trans-impedance amplifier input capacitance.Because of Cdb.MP2、Cdb.MN5And Cin2Very little, therefore rear class trans-impedance amplifier
It can be in the case where meeting bandwidth, by RF2It is arranged very big.
By above-mentioned analysis it is found that the total transimpedance gain of the carried current detection circuit of the present invention is
And the big parasitic capacitance of current detection circuit input node is isolated by prime low gain trans-impedance amplifier, rear class is across resistance
Amplifier input capacitance will become very little, therefore for the bandwidth of integrated circuit and ratio of gains tradition trans-impedance amplifier, can
The higher of setting, meets the needs of high-gain, broadband.
Claims (1)
1. a kind of micro-current sensing circuit, including prime trans-impedance amplifier, voltage current adapter, rear class trans-impedance amplifier and partially
Circuits；The prime trans-impedance amplifier is by first resistor R1, second resistance R2,3rd resistor RF1, the first capacitance CF1, first
NMOS tube MN1 and the second NMOS tube MN2 are constituted；The grid of first NMOS tube MN1 is detection current input terminal, the first NMOS tube
The drain electrode of MN1 is followed by power supply, the source electrode ground connection of the first NMOS tube MN1 by first resistor R1；The grid of second NMOS tube MN2 connects
The drain electrode of the drain electrode of first NMOS tube MN1, the second NMOS tube MN2 connects power supply, and the source electrode of the second NMOS tube MN2 passes through second resistance
It is grounded after R2；The grid of first NMOS tube MN1 is followed by 2 source electrodes of the second NMOS tube MN and second resistance R2 by 3rd resistor RF1
Tie point；First capacitance CF1 is in parallel with 3rd resistor RF1；The voltage current adapter is by the 4th resistance R3, the second capacitance
C1, third NMOS tube MN3, the 4th NMOS tube MN4, the 5th NMOS tube MN5, the first PMOS tube MP1, the second PMOS tube MP2 and fortune
Amplifier is calculated to constitute；The in-phase end of operational amplifier is the input terminal of voltage current adapter, the reverse side of operational amplifier according to
It is secondary to pass through the 4th resistance R3 and the second capacitance C1 ground connection, the grid of the output termination third NMOS tube MN3 of operational amplifier；Third
The drain electrode of NMOS tube MN3 connects the drain electrode of the first PMOS tube MP1, and the source electrode of third NMOS tube MN3 connects the leakage of the 4th NMOS tube MN4
Pole；The source electrode of 4th NMOS tube MN4 is grounded, and the grid of the 4th NMOS tube MN4 connects the grid of the 5th NMOS tube MN5；5th NMOS
The drain electrode of pipe MN5 connects the drain electrode of the second PMOS tube MP2, the source electrode ground connection of the 5th NMOS tube MN5；The source electrode of first PMOS tube MP1
Power supply is connect, the grid of the first PMOS tube MP1 connects the grid of the second PMOS tube MP2；The source electrode of second PMOS tube MP2 connects power supply, the
The drain electrode of two PMOS tube MP2 is connected with the drain electrode of the 5th NMOS tube MN5, is the output IOUT1 of voltage current adapter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610640211.0A CN106018926B (en) | 2016-08-05 | 2016-08-05 | A kind of micro-current sensing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610640211.0A CN106018926B (en) | 2016-08-05 | 2016-08-05 | A kind of micro-current sensing circuit |
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| Publication Number | Publication Date |
|---|---|
| CN106018926A CN106018926A (en) | 2016-10-12 |
| CN106018926B true CN106018926B (en) | 2018-08-31 |
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| CN201610640211.0A Expired - Fee Related CN106018926B (en) | 2016-08-05 | 2016-08-05 | A kind of micro-current sensing circuit |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505991A (en) * | 2016-10-26 | 2017-03-15 | 电子科技大学 | A kind of high bandwidth circuit current sensor interface circuitry |
| KR102419643B1 (en) * | 2018-03-29 | 2022-07-11 | 삼성전자주식회사 | Current-to-voltage converter providing a variable bandwidth and apparatus including the same |
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| CN101197625A (en) * | 2007-12-18 | 2008-06-11 | 天津大学 | Standard CMOS difference optoelectronic integration receiver with multiplied band width and sensibility |
| CN101505140A (en) * | 2009-03-04 | 2009-08-12 | 中国电力科学研究院 | Trans-impedance amplifier with low noise and high gain-bandwidth product |
| CN202548286U (en) * | 2012-04-23 | 2012-11-21 | 北京航天时代光电科技有限公司 | Detection circuit of avalanche photodiode |
| CN203086479U (en) * | 2012-12-12 | 2013-07-24 | 青岛海信宽带多媒体技术有限公司 | Optical module receiver circuit and optical module |
| CN103901253A (en) * | 2014-04-15 | 2014-07-02 | 电子科技大学 | Microcurrent detection circuit |
| CN103929139A (en) * | 2014-04-22 | 2014-07-16 | 西安电子科技大学 | Transimpedance pre-amplifier of photo-receiver with high-precision automatic gain control |
| CN105187017A (en) * | 2015-09-07 | 2015-12-23 | 电子科技大学 | Broadband amplifying circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7245179B2 (en) * | 2004-10-04 | 2007-07-17 | Industrial Technology Research Institute | Auto gain controller |
| JP2008072590A (en) * | 2006-09-15 | 2008-03-27 | Toshiba Corp | Amplifier circuit and communication device |
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2016
- 2016-08-05 CN CN201610640211.0A patent/CN106018926B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101197625A (en) * | 2007-12-18 | 2008-06-11 | 天津大学 | Standard CMOS difference optoelectronic integration receiver with multiplied band width and sensibility |
| CN101505140A (en) * | 2009-03-04 | 2009-08-12 | 中国电力科学研究院 | Trans-impedance amplifier with low noise and high gain-bandwidth product |
| CN202548286U (en) * | 2012-04-23 | 2012-11-21 | 北京航天时代光电科技有限公司 | Detection circuit of avalanche photodiode |
| CN203086479U (en) * | 2012-12-12 | 2013-07-24 | 青岛海信宽带多媒体技术有限公司 | Optical module receiver circuit and optical module |
| CN103901253A (en) * | 2014-04-15 | 2014-07-02 | 电子科技大学 | Microcurrent detection circuit |
| CN103929139A (en) * | 2014-04-22 | 2014-07-16 | 西安电子科技大学 | Transimpedance pre-amplifier of photo-receiver with high-precision automatic gain control |
| CN105187017A (en) * | 2015-09-07 | 2015-12-23 | 电子科技大学 | Broadband amplifying circuit |
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| CN106018926A (en) | 2016-10-12 |
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