CN104113293B - A kind of high-gain low-noise difference trans-impedance amplifier - Google Patents
A kind of high-gain low-noise difference trans-impedance amplifier Download PDFInfo
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- CN104113293B CN104113293B CN201310500689.XA CN201310500689A CN104113293B CN 104113293 B CN104113293 B CN 104113293B CN 201310500689 A CN201310500689 A CN 201310500689A CN 104113293 B CN104113293 B CN 104113293B
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Abstract
The invention provides a kind of high-gain low-noise difference trans-impedance amplifier, including current mirror, adjustment type common emitter common base trans-impedance amplifier and output common-source amplifier, the adjustment type common emitter common base trans-impedance amplifier includes common base amplifying unit and negative-feedback common emitter amplifying unit；The negative-feedback common emitter amplifying unit is arranged between the emitter-base bandgap grading of the common base amplifying unit and base stage, used as negative feedback path；The current mirror equal proportion replicates input current, and is that the common base amplifying unit and the negative-feedback common emitter amplifying unit provide bias voltage；The output common-source amplifier, is connected between the output end of the adjustment type common emitter common base trans-impedance amplifier and the output end of the high-gain low-noise difference trans-impedance amplifier, increases transimpedance gain.The present invention carries out high-gain, low noise amplification to the small-signal that receives, and bandwidth is larger, is rationally provided with the dynamic range of input current signal, with design is simple and the characteristics of single-chip integration.
Description
Technical field
The present invention relates to integrated circuit fields, more particularly to a kind of high-gain low-noise difference trans-impedance amplifier.
Background technology
In fiber optic communication systems, preamplifier to performance speed, sensitivity, signal to noise ratio of whole system etc. all
There is significant impact.According to the characteristics of biasing resistor, selectable preamplifier has three kinds：Low-impedance amplifier, amplifies across resistance
Device and high-impedance amplifier.Low-impedance amplifier simple structure, with roomy, but gain is not high enough, and noise is larger, and high
Impedance amplifier sensitivity is high, and noise is small, but has the shortcomings that bandwidth is small and narrow dynamic range, selects trans-impedance amplifier, energy
Good compromise is obtained in these performance requirements.
As shown in figure 1, being electric current modular form trans-impedance amplifier structure chart.In Fig. 1, Vdd is supply voltage, and gnd is ground terminal,
IinIt is input current signal, CDIt is the parasitic capacitance of photodetector, VbiasIt is bias voltage, VoutIt is output voltage signal；NMOS
Transistor M1, resistance R1With resistance RSConstitute cathode-input amplifier；Nmos pass transistor M2With resistance R2Constitute common-source amplifier, realize compared with
Open-loop gain high；Nmos pass transistor M3With resistance R3Source follower is constituted, input and output isolation, current potential translation is realized and is hindered
Anti-rotation is changed；RfIt is feedback resistance, there is provided parallel voltage negtive backword；Because cathode-input amplifier has preferable buffer action, make anti-
Feed resistance RfInfluence to input resistance significantly reduces.
AV2=gm2R2 (2)
Electric capacity CTIt is represented by：
CT=CD+Cgs2+Cgd1+(1+AV2)Cgd2 (3)
Wherein, gm2It is nmos pass transistor M2Mutual conductance, Cgs2And Cgd2Respectively M2Gate-source capacitance and gate-drain capacitance,
Cgd1It is nmos pass transistor M1Gate-drain capacitance.
The input resistance of electric current modular form trans-impedance amplifier is larger, and gain is low, and noise is high, and bandwidth is small.And due to defeated
Enter current signal usual very faint, therefore it is required that the necessary very little of the noise of trans-impedance amplifier, so that reduce the distortion of signal, together
When, it is desirable to trans-impedance amplifier has transimpedance gain higher so as to less current signal is changed into larger voltage signal,
Trans-impedance amplifier must have larger bandwidth, for use in high-speed communication system.
The content of the invention
It is faint to what is received it is a primary object of the present invention to provide a kind of high-gain low-noise difference trans-impedance amplifier
Signal amplifies with carrying out high-gain, low noise, and bandwidth is larger, rationally sets the dynamic range of input current signal.
In order to achieve the above object, the invention provides a kind of high-gain low-noise difference trans-impedance amplifier, including electric current
Mirror, adjustment type common emitter common base trans-impedance amplifier and output common-source amplifier, wherein,
The adjustment type common emitter common base trans-impedance amplifier includes that common base amplifying unit and negative-feedback common emitter amplify
Unit；
The emitter-base bandgap grading and the common base that the negative-feedback common emitter amplifying unit is arranged at the common base amplifying unit are put
Between the base stage of big unit, as negative feedback path；
The current mirror, replicates input current, and be the common base amplifying unit and the negative-feedback for equal proportion
Common emitter amplifying unit provides bias voltage；
The output common-source amplifier, is connected to output end and the institute of the adjustment type common emitter common base trans-impedance amplifier
State between the output end of high-gain low-noise difference trans-impedance amplifier, transimpedance gain is increased for further.
During implementation, the common base amplifying unit, the negative-feedback common emitter amplifying unit and the output common source amplify
Device is differential configuration.
During implementation, the current mirror includes input current source, first resistor and the first nmos pass transistor；
The input current source, positive pole accesses supply voltage, and negative pole is connected with described first resistor one end；
The other end of the first resistor is connected with the drain electrode of first nmos pass transistor；
The source electrode and substrate of first nmos pass transistor are grounded, and the grid of first nmos pass transistor and drain electrode connect
It is connected together.
During implementation, the common base amplifying unit includes that the first PMOS transistor, the second PMOS transistor, a NPN are brilliant
Body pipe, the second NPN transistor, the second nmos pass transistor and the 3rd nmos pass transistor；The negative-feedback common emitter amplifying unit
Including second resistance, 3rd resistor, the 3rd NPN transistor, the 4th NPN transistor and the 4th nmos pass transistor；
The source electrode and substrate of first PMOS transistor and second PMOS transistor access the supply voltage,
The equal Access Control voltage of grid of first PMOS transistor and second PMOS transistor；First PMOS transistor
Drain electrode be connected with the colelctor electrode of first NPN transistor；
Second nmos pass transistor, drain electrode is connected with the emitter-base bandgap grading of first NPN transistor, and grid is brilliant with a NMOS
The grid connection of body pipe, source electrode and substrate are grounded；
The base stage connection of first NPN transistor and one end of the second resistance and the 3rd NPN transistor
Colelctor electrode is connected, and the other end of the second resistance accesses the supply voltage；
The base stage of the 3rd NPN transistor is brilliant with the emitter-base bandgap grading of first NPN transistor and the 2nd NMOS respectively
The drain electrode connection of body pipe, emitter-base bandgap grading is connected with the drain electrode of the 4th nmos pass transistor；
3rd nmos pass transistor, grid is connected with the grid of first nmos pass transistor, and source electrode and substrate connect
Ground；
The drain electrode of second PMOS transistor is connected with the colelctor electrode of second NPN transistor；
4th nmos pass transistor, drain electrode is connected with the emitter-base bandgap grading of second NPN transistor, and grid is brilliant with a NMOS
The grid connection of body pipe, source electrode and substrate are grounded；
The base stage of second NPN transistor respectively with one end of the 3rd resistor and the 4th NPN transistor
Colelctor electrode is connected, and the other end of the 3rd resistor accesses the supply voltage；
The base stage of the 4th NPN transistor, it is brilliant with the emitter-base bandgap grading of second NPN transistor and the 4th NMOS respectively
The drain electrode connection of body pipe, emitter-base bandgap grading is connected with the emitter-base bandgap grading of the 3rd NPN transistor.
During implementation, the output common-source amplifier includes：4th resistance, the 5th resistance, the 5th nmos pass transistor and
Six nmos pass transistors；
Wherein, the supply voltage, described are accessed in one end of the 4th resistance and one end of the 5th resistance
The other end of four resistance is connected with the drain electrode of the 5th nmos pass transistor, the grid of the 5th nmos pass transistor respectively with institute
State the first PMOS transistor drain electrode and the first NPN transistor colelctor electrode connect, the source electrode of the 5th nmos pass transistor and
Substrate is grounded, and the other end of the 5th resistance connects the drain electrode of the 6th nmos pass transistor, the 6th nmos pass transistor
Grid is connected with the drain electrode of second PMOS transistor and the colelctor electrode of the second NPN transistor respectively, and the 6th NMOS is brilliant
The source electrode and substrate of body pipe are grounded.
During implementation, the breadth length ratio of first PMOS transistor is identical with the breadth length ratio of second PMOS transistor；Institute
The breadth length ratio for stating the first NPN transistor is identical with the breadth length ratio of second NPN transistor；The width of the 3rd NPN transistor
Length is more identical than with the breadth length ratio of the 4th NPN transistor；The breadth length ratio and the 6th NMOS of the 5th nmos pass transistor
Transistor breadth length ratio is identical.
During implementation, the breadth length ratio of second nmos pass transistor, breadth length ratio, the described 3rd of the 4th nmos pass transistor
The breadth length ratio of the breadth length ratio of nmos pass transistor and first nmos pass transistor is proportional.
During implementation, the resistance of the second resistance, the resistance of the 3rd resistor, the resistance of the 4th resistance and described
The resistance of the 5th resistance is identical.
Compared with prior art, high-gain low-noise difference trans-impedance amplifier of the present invention has following beneficial effect
Really：
High-gain：Due to being amplified using two-stage, first order amplifier is adjustment type common emitter common base trans-impedance amplifier, the
Two-stage amplifier is common-source amplifier, it is achieved thereby that high-gain；
Low noise：Using differential configuration, intrinsic high cmrr can reduce power-supply fluctuation and methods of parasitic feedback path
Interference, and Substrate Coupling Noise and temperature drift can be suppressed.Additionally, differential configuration is easy to and differential configuration main amplifier below is cascaded
Without single-ended-both-end change-over circuit, it is easy to accomplish single-chip integration；
Big bandwidth：The input resistance of adjustment type common emitter common base trans-impedance amplifier is minimum, and bandwidth has been expanded significantly, and
Adjustment type common emitter common base trans-impedance amplifier can provide a virtual earth input impedance, therefore to the isolation effect of parasitic capacitance more
It is good.Therefore by the use of adjustment type common emitter cobasis polar form trans-impedance amplifier as the trans-impedance amplifier of input stage than other structures
Trans-impedance amplifier can more suppress influence of the photodetector parasitic capacitance to preamplifier bandwidth, meanwhile, by CMOS transistor and
Bipolar transistor is integrated on same chip, substantially increases the transmission rate of signal；
Simple structure：The adjustment type common emitter common base trans-impedance amplifier simple structure that the present invention is used, pipe number is less,
And extra feedback resistance is not needed, reduce power consumption and chip area.
Brief description of the drawings
Fig. 1 is the circuit diagram of the electric current modular form trans-impedance amplifier for using in the prior art；
Fig. 2 is the circuit diagram of traditional RGC trans-impedance amplifiers.
Fig. 3 is the circuit diagram of the high-gain low-noise difference trans-impedance amplifier described in the embodiment of the present invention.
Specific embodiment
To make the technical problem to be solved in the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and tool
Body embodiment is described in detail.
As shown in Fig. 2 being RGC（Regulated-Cascade, adjustment type cascade）Trans-impedance amplifier circuit diagram.
In fig. 2, Vdd is supply voltage, and gnd is ground terminal, IinIt is input current signal, CDIt is the parasitism electricity of photodetector
Hold, VoutIt is output voltage signal；
Compared with the electric current modular form trans-impedance amplifier structure shown in Fig. 1, the RGC trans-impedance amplifiers shown in Fig. 2 increased
Nmos pass transistor MBWith resistance RBThe common-source amplifier of composition, is used as negative feedback path, and be nmos pass transistor M1There is provided
Bias voltage；If M1Drain-source current increase, then resistance RSPressure drop increase, i.e. nmos pass transistor MBGrid voltage increase,
So that MBDrain-source current increase, by resistance RBAfter make M1Grid voltage decline so that M1Drain-source current reduce,
The effect of negative-feedback is realized, the stability of circuit is increased.
The input resistance of RGC trans-impedance amplifiers can be expressed as：
As can be seen that the input resistance of RGC form trans-impedance amplifiers is 1/ (1+ of electric current modular form trans-impedance amplifier
gmBRB) times, gm1It is nmos pass transistor M1Mutual conductance, gmBIt is nmos pass transistor MBMutual conductance, input resistance greatly reduced, and bandwidth is obtained
To effective broadening；And RGC trans-impedance amplifiers can provide a virtual earth input impedance, therefore to the isolation effect of parasitic capacitance more
It is good.Therefore can more suppress than the trans-impedance amplifier of other structures by the use of RGC trans-impedance amplifiers as the trans-impedance amplifier of input stage
Influence of the photodetector parasitic capacitance to preamplifier bandwidth.
The present invention provides a kind of high-gain low-noise difference trans-impedance amplifier.Small-signal to receiving carries out increasing high
Benefit, low noise ground amplify, and bandwidth is larger, it is adaptable to high-speed communication system, is rationally provided with the dynamic range of input current signal,
Circuit has the characteristics of designing simple and single-chip integration simultaneously.
High-gain low-noise difference trans-impedance amplifier described in the embodiment of the present invention, including current mirror, adjustment type common emitter
Common base trans-impedance amplifier and output common-source amplifier, wherein,
The adjustment type common emitter common base trans-impedance amplifier includes that common base amplifying unit and negative-feedback common emitter amplify
Unit；
The emitter-base bandgap grading and the common base that the negative-feedback common emitter amplifying unit is arranged at the common base amplifying unit are put
Between the base stage of big unit, as negative feedback path；
The current mirror, replicates input current, and be the common base amplifying unit and the negative-feedback for equal proportion
Common emitter amplifying unit provides bias voltage；
The output common-source amplifier, is connected to output end and the institute of the adjustment type common emitter common base trans-impedance amplifier
State between the output end of high-gain low-noise difference trans-impedance amplifier, transimpedance gain is increased for further.
High-gain low-noise difference trans-impedance amplifier described in the embodiment of the present invention, using dual-stage amplifier, the first order is put
Big device is adjustment type common emitter common base trans-impedance amplifier, and second level amplifier is output common-source amplifier；Wherein, the adjustment
Formula common emitter common base trans-impedance amplifier includes common base amplifying unit and negative-feedback common emitter amplifying unit, therefore increases with height
Benefit；And because the input resistance of adjustment type common emitter common base trans-impedance amplifier is minimum, bandwidth has been expanded significantly, and adjust
Formula common emitter common base trans-impedance amplifier can provide a virtual earth input impedance, therefore more preferable to the isolation effect of parasitic capacitance；
Therefore put across resistance than other structures as the trans-impedance amplifier of input stage by the use of adjustment type common emitter common base trans-impedance amplifier
Big device can more suppress influence of the photodetector parasitic capacitance to preamplifier bandwidth, meanwhile, by CMOS transistor and ambipolar
Transistor is integrated on same chip, substantially increases the transmission rate of signal；High-gain described in the embodiment of the present invention is low
Noise differential trans-impedance amplifier is simple, and pipe number is less, and does not need extra feedback resistance, reduces power consumption and chip face
Product.
Preferably, the common base amplifying unit, the negative-feedback common emitter amplifying unit and the output common source amplify
Device is differential configuration, reduces power-supply fluctuation and the interference of methods of parasitic feedback path, while inhibiting Substrate Coupling Noise and temperature
Drift.
Specifically, as shown in figure 3, the current mirror includes input current source Iin, first resistor R1And the first NMOS it is brilliant
Body pipe M1；
The input current source Iin, positive pole accesses supply voltage Vdd, negative pole and the first resistor R1One end connects；
The first resistor R1The other end and the first nmos pass transistor M1Drain electrode connection；
The first nmos pass transistor M1Source electrode and substrate equal earth terminal gnd, the first nmos pass transistor M1Grid
Linked together with drain electrode.
In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, the common base amplifying unit includes first
PMOS transistor P1, the second PMOS transistor P2, the first NPN transistor Q1, the second NPN transistor Q2, the second nmos pass transistor M2
And the 3rd nmos pass transistor M3；The negative-feedback common-source amplifier includes second resistance R2, 3rd resistor R3, the 3rd NPN crystal
Pipe Q3, the 4th NPN transistor Q4And the 4th nmos pass transistor M4；
The first PMOS transistor P1With the second PMOS transistor P2Source electrode and substrate access power supply electricity
Pressure Vdd, the first PMOS transistor P1With the second PMOS transistor P2The equal Access Control voltage V of gridC；Described
One PMOS transistor P1Drain electrode and the first NPN transistor Q1Colelctor electrode connection；
Second nmos pass transistor M2, drain and the first NPN transistor Q1Emitter-base bandgap grading connection, grid and described first
Nmos pass transistor M1Grid connection, source electrode and the equal earth terminal gnd of substrate；
The first NPN transistor Q1Base stage connection and the second resistance R2One end and the 3rd NPN transistor
Q3Colelctor electrode connection, the second resistance R2The other end access the supply voltage Vdd；
The 3rd NPN transistor Q3Base stage respectively with the first NPN transistor Q1Emitter-base bandgap grading and the 2nd NMOS
Transistor M2Drain electrode connection, source electrode and the 4th nmos pass transistor M4Drain electrode connection；
The 3rd nmos pass transistor M3, grid and the first nmos pass transistor M1Grid connection, source electrode and substrate are equal
Earth terminal gnd；
The second PMOS transistor P2Drain electrode and the second NPN transistor Q2Colelctor electrode connection；
4th nmos pass transistor M4, drain and the second NPN transistor Q2Emitter-base bandgap grading connection, a NMOS described in grid
Transistor M1Grid connection, source electrode and the equal earth terminal gnd of substrate；
The second NPN transistor Q2Base stage respectively with the 3rd resistor R3One end and the 4th NPN transistor
Q4Colelctor electrode connection, the 3rd resistor R3The other end access the supply voltage Vdd；
The 4th NPN transistor Q4Base stage, respectively with the second NPN transistor Q2Emitter-base bandgap grading and the described 4th
Nmos pass transistor M4Drain electrode connection, source electrode and the 3rd NPN transistor Q3Emitter-base bandgap grading connection.
In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, the output common-source amplifier includes R4, the 5th
Resistance R5, the 5th nmos pass transistor M5And the 6th nmos pass transistor M6；
Wherein, the 4th resistance R4One end and the 5th resistance R5One end access the supply voltage Vdd,
The 4th resistance R4The other end and the 5th nmos pass transistor M5Drain electrode connection, the 5th nmos pass transistor M5's
Grid respectively with the first PMOS transistor P1Drain electrode and the first NPN transistor Q1Colelctor electrode connection, the 5th NMOS
Transistor M5Source electrode and substrate be grounded, the 5th resistance R5The other end connect the 6th nmos pass transistor M6Drain electrode, institute
State the 6th nmos pass transistor M6Grid respectively with the second PMOS transistor P2Drain electrode and the second NPN transistor Q2Collection
Electrode is connected, the 6th nmos pass transistor M6Source electrode and the equal earth terminal gnd of substrate.
In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, the first PMOS transistor P1Breadth length ratio
With the second PMOS transistor P2Breadth length ratio it is identical；The first NPN transistor Q1Breadth length ratio and the 2nd NPN it is brilliant
Body pipe Q2Breadth length ratio it is identical；The 3rd NPN transistor Q3Breadth length ratio and the 4th NPN transistor Q4Breadth length ratio phase
Together；The 5th nmos pass transistor M5Breadth length ratio and the 6th nmos pass transistor M6Breadth length ratio is identical.
In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, the breadth length ratio of the second nmos pass transistor M2,
The breadth length ratio of the 4th nmos pass transistor M4, the breadth length ratio of the 3rd nmos pass transistor M3 and first nmos pass transistor
The breadth length ratio of M1 is proportional.In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, the second resistance R2Resistance
Value, the 3rd resistor R3Resistance, the 4th resistance R4Resistance and the 5th resistance R5Resistance it is identical.
Compared with Fig. 2, the embodiment of the present invention uses nmos pass transistor M in Fig. 32And M3To replace traditional RGC to amplify across resistance
Source series resistance R in device cathode-input amplifierS, by adjusting M2And M3Breadth length ratio realize different conducting resistances, it is more sharp
In integrated chip；Corresponding nmos pass transistor is replaced using NPN transistor Q1, Q2, Q3 and Q4, the speed of circuit is improve；
Using differential configuration, power-supply fluctuation and the interference of methods of parasitic feedback path are reduced, while inhibiting Substrate Coupling Noise and temperature drift.
The present invention can amplify with carrying out high-gain, low noise to the small-signal for receiving, and bandwidth is larger, it is adaptable to high
Fast communication system, is rationally provided with the dynamic range of input current signal, while circuit has design simple and single chip integrated
Feature.
The solution of the present invention can amplify with carrying out high-gain, low noise to the small-signal for receiving, and bandwidth is larger, fit
For high-speed communication system, the dynamic range of input current signal is rationally provided with, while circuit has design simple and monolithic
Integrated the characteristics of.
High-gain low-noise difference trans-impedance amplifier described in the embodiment of the present invention has the following advantages that：
High-gain：Amplified using two-stage, first order amplifier is adjustment type common emitter common base trans-impedance amplifier, the second level
Amplifier is output common-source amplifier；Wherein, adjustment type common emitter cobasis polar form trans-impedance amplifier includes that common base amplifies list
Unit and negative-feedback common source amplifying unit；First PMOS transistor, the second PMOS transistor, the first NPN transistor, the 2nd NPN are brilliant
Body pipe, the second nmos pass transistor and the 3rd nmos pass transistor constitute common base amplifying unit, input current signal are carried out just
Step is amplified and changes into voltage signal；Second resistance, 3rd resistor, the 3rd NPN transistor, the 4th NPN transistor and the 4th
Nmos pass transistor constitutes negative-feedback common emitter amplifying unit, as negative feedback path, improves the stability of circuit；4th electricity
Resistance, the 5th resistance, the 5th nmos pass transistor and the 6th nmos pass transistor constitute common-source amplifier, and the voltage signal to converting enters
Row further amplifies, it is achieved thereby that high-gain；
Low noise：Using differential configuration, intrinsic high cmrr can reduce power-supply fluctuation and methods of parasitic feedback path
Interference, and Substrate Coupling Noise and temperature drift can be suppressed.Additionally, differential configuration is easy to and differential configuration main amplifier below is cascaded
Without single-ended-both-end change-over circuit, it is easy to accomplish single-chip integration；
Big bandwidth：The input resistance of adjustment type common emitter common base trans-impedance amplifier is minimum, and bandwidth has been expanded significantly, and
Adjustment type common emitter common base trans-impedance amplifier can provide a virtual earth input impedance, therefore to the isolation effect of parasitic capacitance more
It is good.Therefore by the use of adjustment type common emitter common base trans-impedance amplifier as the trans-impedance amplifier of input stage than other structures across resistance
Amplifier can more suppress influence of the photodetector parasitic capacitance to preamplifier bandwidth, meanwhile, by CMOS
（Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductors (CMOS)）Transistor and ambipolar
Transistor is integrated on same chip, substantially increases the transmission rate of signal；
Simple structure：The adjustment type common emitter common base trans-impedance amplifier simple structure that the present invention is used, pipe number is less,
And extra feedback resistance is not needed, reduce power consumption and chip area.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (6)
1. a kind of high-gain low-noise difference trans-impedance amplifier, it is characterised in that including current mirror, adjustment type common emitter common base
Trans-impedance amplifier and output common-source amplifier, wherein,
The adjustment type common emitter common base trans-impedance amplifier includes common base amplifying unit and negative-feedback common emitter amplifying unit；
The emitter-base bandgap grading and the common base that the negative-feedback common emitter amplifying unit is arranged at the common base amplifying unit amplify single
Between the base stage of unit, as negative feedback path；
The current mirror, replicates input current, and be the common base amplifying unit and the negative-feedback cascode for equal proportion
Pole amplifying unit provides bias voltage；
The output common-source amplifier, is connected to the output end and the height of the adjustment type common emitter common base trans-impedance amplifier
Between the output end of grain low noise difference trans-impedance amplifier, for further increasing transimpedance gain；
The common base amplifying unit includes the first PMOS transistor, the second PMOS transistor, the first NPN transistor, the 2nd NPN
Transistor, the second nmos pass transistor and the 3rd nmos pass transistor；The negative-feedback common emitter amplifying unit include second resistance,
3rd resistor, the 3rd NPN transistor, the 4th NPN transistor and the 4th nmos pass transistor；
The source electrode and substrate of first PMOS transistor and second PMOS transistor access supply voltage, described first
The equal Access Control voltage of grid of PMOS transistor and second PMOS transistor；The drain electrode of first PMOS transistor with
The colelctor electrode connection of first NPN transistor；
Second nmos pass transistor, drain electrode is connected with the emitter-base bandgap grading of first NPN transistor, grid and first nmos pass transistor
Grid connection, source electrode and substrate are grounded；
The base stage of first NPN transistor connects the one end and the current collection of the 3rd NPN transistor with the second resistance
Pole connects, and the other end of the second resistance accesses the supply voltage；
The base stage of the 3rd NPN transistor respectively with the emitter-base bandgap grading and second nmos pass transistor of first NPN transistor
Drain electrode connection, emitter-base bandgap grading is connected with the drain electrode of the 4th nmos pass transistor；
3rd nmos pass transistor, grid is connected with the grid of first nmos pass transistor, and source electrode and substrate are grounded；
The drain electrode of second PMOS transistor is connected with the colelctor electrode of second NPN transistor；
4th nmos pass transistor, drain electrode is connected with the emitter-base bandgap grading of second NPN transistor, grid and first nmos pass transistor
Grid connection, source electrode and substrate are grounded；
The base stage of second NPN transistor one end respectively with the 3rd resistor and the current collection of the 4th NPN transistor
Pole connects, and the other end of the 3rd resistor accesses the supply voltage；
The base stage of the 4th NPN transistor, respectively with the emitter-base bandgap grading and the 4th nmos pass transistor of second NPN transistor
Drain electrode connection, emitter-base bandgap grading is connected with the emitter-base bandgap grading of the 3rd NPN transistor；
The output common-source amplifier includes：4th resistance, the 5th resistance, the 5th nmos pass transistor and the 6th NMOS crystal
Pipe；
Wherein, the supply voltage, the 4th electricity are accessed in one end of the 4th resistance and one end of the 5th resistance
The other end of resistance is connected with the drain electrode of the 5th nmos pass transistor, and the grid of the 5th nmos pass transistor is respectively with described
The drain electrode of one PMOS transistor and the colelctor electrode of the first NPN transistor are connected, the source electrode and substrate of the 5th nmos pass transistor
It is grounded, the other end of the 5th resistance connects the drain electrode of the 6th nmos pass transistor, the grid of the 6th nmos pass transistor
It is connected with the drain electrode of second PMOS transistor and the colelctor electrode of the second NPN transistor respectively, the 6th nmos pass transistor
Source electrode and substrate be grounded.
2. high-gain low-noise difference trans-impedance amplifier as claimed in claim 1, it is characterised in that
The common base amplifying unit, the negative-feedback common emitter amplifying unit and the output common-source amplifier are difference knot
Structure.
3. high-gain low-noise difference trans-impedance amplifier as claimed in claim 2, it is characterised in that
The current mirror includes input current source, first resistor and the first nmos pass transistor；
The input current source, positive pole accesses supply voltage, and negative pole is connected with described first resistor one end；
The other end of the first resistor is connected with the drain electrode of first nmos pass transistor；
The source electrode and substrate of first nmos pass transistor are grounded, and the grid of first nmos pass transistor and drain electrode are connected to
Together.
4. high-gain low-noise difference trans-impedance amplifier according to claim 3, it is characterised in that
The breadth length ratio of first PMOS transistor is identical with the breadth length ratio of second PMOS transistor；First NPN is brilliant
The breadth length ratio of body pipe is identical with the breadth length ratio of second NPN transistor；The breadth length ratio of the 3rd NPN transistor and described
The breadth length ratio of four NPN transistors is identical；The breadth length ratio and the 6th nmos pass transistor breadth length ratio of the 5th nmos pass transistor
It is identical.
5. high-gain low-noise difference trans-impedance amplifier according to claim 4, it is characterised in that the 2nd NMOS is brilliant
The breadth length ratio of body pipe, the breadth length ratio of the 4th nmos pass transistor, the breadth length ratio and described first of the 3rd nmos pass transistor
The breadth length ratio of nmos pass transistor is proportional.
6. high-gain low-noise difference trans-impedance amplifier according to claim 5, it is characterised in that the second resistance
Resistance, the resistance of the 3rd resistor, the resistance of the 4th resistance are identical with the resistance of the 5th resistance.
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| CN201310500689.XA CN104113293B (en) | 2013-10-22 | 2013-10-22 | A kind of high-gain low-noise difference trans-impedance amplifier |
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| US9843297B2 (en) * | 2015-04-03 | 2017-12-12 | Cosemi Technologies, Inc. | Balanced differential transimpedance amplifier with single ended input and balancing method |
| CN105099372A (en) * | 2015-08-07 | 2015-11-25 | 罗旭 | Fully-differential trans-impedance amplifier |
| CN106253870B (en) * | 2016-07-19 | 2018-09-21 | 电子科技大学 | A kind of high-gain trans-impedance amplifier with automatic growth control |
| CN106301240B (en) * | 2016-08-03 | 2019-01-25 | 电子科技大学 | A kind of trans-impedance amplifier |
| CN106208993B (en) * | 2016-08-16 | 2020-04-24 | 深圳市蓝狮微电子有限公司 | Trans-impedance amplifier |
| DE102016115286A1 (en) * | 2016-08-17 | 2018-02-22 | Infineon Technologies Ag | Integrated circuit with amplifier MOSFET |
| CN106656061B (en) * | 2016-12-30 | 2022-09-16 | 光梓信息科技（上海）有限公司 | Transimpedance amplifier |
| DE102017111197A1 (en) * | 2017-05-23 | 2018-11-29 | Sicoya Gmbh | Transimpedance amplifier circuit |
| CN108199694A (en) * | 2018-01-19 | 2018-06-22 | 厦门优迅高速芯片有限公司 | A kind of auto gain control method and circuit that can be applied to burst trans-impedance amplifier |
| US10804859B2 (en) | 2018-12-10 | 2020-10-13 | Analog Devices, Inc. | Transimpedance amplifiers with feedforward current |
| CN113316895A (en) * | 2019-11-25 | 2021-08-27 | 深圳市汇顶科技股份有限公司 | Amplifying circuit |
| CN112073012B (en) * | 2020-03-10 | 2022-11-22 | 东南大学 | Pseudo-differential structure low-noise high-linearity trans-impedance amplifier circuit and chip |
| CN112039452B (en) * | 2020-09-07 | 2022-08-23 | 电子科技大学 | Broadband trans-impedance amplifier |
| WO2023019557A1 (en) * | 2021-08-20 | 2023-02-23 | 华为技术有限公司 | Amplification circuit, radio-frequency receiver, communication module, and electronic device |
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| US7135932B2 (en) * | 2003-07-08 | 2006-11-14 | Sires Labs Sdn. Bhd. | Transimpedance amplifier |
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