CN103219952B - A kind of wideband low noise amplifier adopting noise cancellation technique - Google Patents
A kind of wideband low noise amplifier adopting noise cancellation technique Download PDFInfo
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- CN103219952B CN103219952B CN201310095543.1A CN201310095543A CN103219952B CN 103219952 B CN103219952 B CN 103219952B CN 201310095543 A CN201310095543 A CN 201310095543A CN 103219952 B CN103219952 B CN 103219952B
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Abstract
The invention provides a kind of wideband low noise amplifier adopting noise cancellation technique, it is characterized in that, comprise alternative baluns (1), the common grid amplifying stage (2) of capacitive cross coupling and feed-forward noise cancellation stage (3), the input direct-coupling of the common grid amplifying stage (2) that two balance output ends of alternative baluns (1) are coupled with capacitive cross, be connected by capacitive coupling with the grid end of feed-forward noise cancellation stage (3) simultaneously, the drain terminal of feed-forward noise cancellation stage (3) is connected to the drain terminal of the common grid amplifying stage (2) of capacitive cross coupling.Feed-forward noise cancellation stage of the present invention is simultaneously as transistor load, and the common grid amplifying stage common DC electric current of capacitive cross coupling, reduces power consumption; And feed-forward noise cancellation stage provides extra noise cancellation path, the noise contribution of common bank tube can be reduced.The present invention, by the feed-forward noise cancellation stage of common DC electric current, achieves low-noise factor and low-power consumption.
Description
Technical field
The present invention relates to a kind of wideband low noise amplifier adopting noise cancellation technique, there is the feature of low-noise factor low-power consumption, belong to technical field of radio frequency integrated circuits.
Background technology
Low noise amplifier is the key modules of receiver in wireless transmitting system, and it is generally connected with antenna, amplifies the small-signal received, and reduces the deterioration to signal as far as possible.Port match, gain, noise factor, power consumption and the linearity are the important technological parameters of low noise amplifier.
Traditional low noise amplifier adopts source class inductive feedback technology, can provide arrowband Input matching and lower noise factor, but this structure needs on-chip inductor, and is not suitable for broadband system.Adopt the low noise amplifier of noise cancellation technique can at the lower noise factor of bandwidth realization, but power consumption be larger.Adopt the low noise amplifier of common gate structure to have the characteristic of broadband Input matching and lower power consumption, but noise factor is larger.
Fig. 1 is the common gate structure low noise amplifier after improving, and have employed differential capacitance cross-coupling technique.The common grid amplifying stage 2 that the common gate structure low noise amplifier improved is coupled by alternative baluns 1, capacitive cross and load stage 4 form.Single-ended signal is converted into differential signal and provides source class direct current biasing for NM1 and NM2 by alternative baluns 1.The common grid amplifying stage 2 of capacitive cross coupling is made up of common grid amplifier tube NM1 and NM2, differential input signal is coupled to the grid of relative transistor by cross-linked electric capacity C1 with C2, signal voltage between the grid source of common grid amplifier tube NM1 and NM2 is doubled, thus increase the equivalent transconductance of grid amplifier tube altogether, reduce noise factor and power consumption.Load stage 4 is by electric capacity, and resistance, one or more in the passive devices such as inductance form.Only consider the noise contribution of grid amplifier tube altogether, under the hypothesis that input impedance and source impedance are mated completely, the noise factor of this circuit is:
F=1+γ/2(1)
For long channel MOSFET, channel noise coefficient gamma approximates 2/3, and noise factor is lower; And for short-channel transistor, γ can be much larger, the noise factor of cathode-input amplifier can be made greatly to increase.In order to reduce the noise factor of cathode-input amplifier further, noise cancellation technique can be adopted, but the noise-cancellation circuit introduced can extra current sinking, causes the power consumption of integrated circuit to increase.
Summary of the invention
The technology of the present invention is dealt with problems: overcome the deficiencies in the prior art, a kind of wideband low noise amplifier adopting noise cancellation technique is provided, be total on the basis of grid low noise amplifier in capacitive cross coupling, introduce extra feed-forward noise err path, offset at difference output end the noise that common grid amplifier tube causes further.
The invention provides following technical scheme: a kind of wideband low noise amplifier adopting noise cancellation technique, comprise alternative baluns (1), capacitive cross coupling common grid amplifying stage (2) and feed-forward noise cancellation stage (3).
The input direct-coupling of the common grid amplifying stage (2) that two balance output ends of alternative baluns (1) are coupled with capacitive cross, source class can be provided to be biased for NM1 and NM2, without the need to source class resistance, inductance or transistor is biased as source class, avoids the noise contribution of these bias devices.
The common grid amplifying stage (2) of capacitive cross coupling is with two identical N-type transistor NM1 and NM2 as inputting amplifier tube, and the two ends of electric capacity C1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of electric capacity C2 connect the source class of NM2 and the grid of NM1 respectively;
Feed-forward noise cancellation stage (3) is made up of two identical P-type crystal pipe PM1 and PM2, and the source class of PM1 and PM2 receives power supply, and the drain electrode of PM1 is connected with the drain electrode of NM1, and the drain electrode of PM2 is connected with the drain electrode of NM2.Feed-forward noise cancellation stage (3) is stacked on the common grid amplifying stage (2) of capacitive cross coupling, not extra current sinking.
Two balance output ends of alternative baluns (1) are connected by capacitive coupling with the grid end of feed-forward noise cancellation stage (3) simultaneously, the two ends of C4 receive the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 receive the source class of NM2 and the grid of PM1 respectively.
The present invention's advantage is compared with prior art:
(1) feed-forward noise cancellation stage of the present invention is that the common grid amplifying stage that capacitive cross is coupled provides extra noise cancellation path, can reduce the noise contribution of common grid amplifier tube NM1 and NM2 at difference output end Vo;
(2) feed-forward noise cancellation stage of the present invention is stacked on the common grid amplifying stage of capacitive cross coupling, PM1 and PM2 is simultaneously as load transistor, and feed-forward noise cancellation stage and cross-linked grid amplifying stage common DC electric current altogether, reduce power consumption power consumption;
(3) feed-forward noise cancellation stage P-type crystal pipe PM1 and PM2 of the present invention realizes, on the N-type transistor NM1 being stacked in the common grid amplifying stage (2) of capacitive cross coupling and NM2, the drain electrode of PM1 connects with the drain electrode of NM1, the drain electrode of PM2 connects with the drain electrode of NM2, such connected mode required voltage nargin is less, can low voltage power supply be adopted, reduce power consumption;
(4) feed-forward noise cancellation stage P-type crystal pipe PM1 and PM2 of the present invention realizes, and the impedance of output is the drain terminal impedance parallel connection of transistor, and high output impedance contributes to realizing higher gain.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 adopts the cross-linked grid low noise amplifier altogether of differential capacitance in prior art;
Fig. 2 is the wideband low noise amplifier structural representation of employing noise cancellation technique provided by the invention;
Fig. 3 is the schematic diagram that alternative baluns offsets noise;
Fig. 4 is the schematic diagram of capacitive cross coupling counters noise;
Fig. 5 is the schematic diagram that feed-forward noise cancellation stage offsets noise.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The specific embodiment of the present invention provides a kind of wideband low noise amplifier adopting noise cancellation technique, as shown in Figure 2, comprise alternative baluns 1, capacitive cross coupling common grid amplifying stage (2) and feed-forward noise cancellation stage 3.
The single ended input 1 of alternative baluns 1 is connected to signal source, 4th end and the 5th end ground connection, balance output end 2 and 3 is directly coupled to the source class of input transistors NM1 and NM2 of common grid amplifying stage 2 respectively, source class can be provided to be biased for NM1 and NM2, without the need to source class resistance, inductance or transistor is biased as source class, avoids the noise contribution of these bias devices.
The common grid amplifying stage 2 of capacitive cross coupling is with two identical N-type transistor NM1 and NM2 as inputting amplifier tube, and the two ends of electric capacity C1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of electric capacity C2 connect the source class of NM2 and the grid of NM1 respectively;
Feed-forward noise cancellation stage 3 is made up of two identical P-type crystal pipe PM1 and PM2, and the source class of PM1 and PM2 receives power supply, and the drain electrode of PM1 is connected with the drain electrode of NM1, and the drain electrode of PM2 is connected with the drain electrode of NM2.Feed-forward noise cancellation stage 3 is stacked on the common grid amplifying stage 2 of capacitive cross coupling, not extra current sinking.
Two balance output ends of alternative baluns 1 are connected by capacitive coupling with the grid end of feed-forward noise cancellation stage 3 simultaneously, and the two ends of C4 receive the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 receive the source class of NM2 and the grid of PM1 respectively.
The Main Noise Sources of cathode-input amplifier is the channel noise of common grid amplifier transistor, can be equivalent to one flows to source class noise current from transistor drain.For the channel noise of NM1, noise current flows to source class from the drain electrode of NM1, produces the noise voltage of a positive at source class, at the noise voltage that drain electrode generation one is anti-phase.Except alternative baluns and capacitive cross are coupled two noise cancellation paths, the present invention devises extra noise forward path, produce relevant anti-phase noise voltage at the drain terminal of NM2, thus difference output end Vo can offset most NM1 noise contribution.
Three noise cancellation path that the present invention adopts, its principle is as follows:
1, alternative baluns
Alternative baluns offsets the principle of noise as shown in Figure 3.The source class noise voltage of transistor NM1 can be coupled to the source class of transistor NM2, and due to the effect of intercoupling of desirable balance balun transformer, the noise voltage of the source class generation of NM2 is identical with the noise voltage amplitude of NM1 source class and phase place is contrary.The source class noise voltage of NM2 is amplified to the drain terminal of NM2 through the common grid of NM2, and NM2 leaks the noise voltage of level and the noise voltage homophase of NM2 source class, the noise voltage homophase also drained with NM1.Such difference output end can offset the common-mode noise of a part, reduces the noise factor of circuit.
2, capacitive cross coupling
Capacitive cross coupled structure offsets the principle of noise as shown in Figure 4.The source class noise voltage of transistor NM1 is coupled to the grid of NM2 by electric capacity C1, NM2 grid noise voltage is identical with NM1 source class noise voltage amplitude same phase.NM2 grid noise voltage is amplified to the drain electrode of NM2 by the common source of NM2, the drain electrode noise voltage of NM2 and NM2 grid noise voltage inversion, to drain noise voltage homophase with NM1.Therefore, difference output end can offset the common-mode noise of a part, reduces the noise factor of circuit.
3, feed-forward noise cancellation stage
Feed-forward noise cancellation stage offsets the principle of noise as shown in Figure 5.The source class noise voltage of transistor NM1 is coupled to the grid of PM2 by electric capacity C4, PM2 grid noise voltage is identical with NM1 source class noise voltage amplitude same phase.PM2 grid noise voltage is amplified to the drain electrode (i.e. the drain electrode of NM2) of PM2 by the common source of PM2, the drain electrode noise voltage of NM2 and PM2 grid noise voltage inversion, to drain noise voltage homophase with NM1.Therefore, difference output end can offset the common-mode noise of a part, reduces the noise factor of circuit.
Under the effect of above-mentioned three noise cancellation path, create the noise voltage of the leakage level homophase of and NM1 in the drain electrode of NM2.Extra noise cancellation path, makes difference output end can offset the noise of more multiple transistor NM1.Due to the symmetry of full-differential circuits, difference output end can offset the noise of more transistor NM2 equally.
The present invention, by the design of additional noise err path, makes the noise of common grid amplifier tube obtain most counteracting at difference output end, reduces the noise factor of circuit.
Adopt the technical scheme that this embodiment provides, following technique effect can be realized:
1, feed-forward noise cancellation stage of the present invention is that the common grid amplifying stage that capacitive cross is coupled provides extra noise cancellation path, can reduce common grid amplifier tube NM1 and NM2 in the noise contribution of difference output end Vo, achieve low-noise factor;
2, feed-forward noise cancellation stage of the present invention is stacked on the common grid amplifying stage of capacitive cross coupling, PM1 and PM2 is simultaneously as load transistor, and feed-forward noise cancellation stage and cross-linked grid amplifying stage common DC electric current altogether, achieve low-power consumption;
3, feed-forward noise cancellation stage P-type crystal pipe PM1 and PM2 of the present invention realizes, be stacked in capacitive cross coupling common grid amplifying stage NM1 and NM2 on, the drain electrode of PM1 connects with the drain electrode of NM1, the drain electrode of PM2 connects with the drain electrode of NM2, such connected mode required voltage nargin is less, can low voltage power supply be adopted, reduce power consumption.
4, feed-forward noise cancellation stage P-type crystal pipe PM1 and PM2 of the present invention realizes, and the impedance of output is the drain terminal impedance parallel connection of transistor, and the output impedance of drain terminal is higher, contributes to realizing high-gain;
The invention provides a kind of wideband low noise amplifier adopting noise cancellation technique.Feed-forward noise cancellation stage is stacked in capacitive coupling and is total on grid amplifying stage by the present invention, and common DC electric current, reduces power consumption; Feed-forward noise cancellation stage provides extra noise cancellation path, reduces the noise contribution of common grid amplifier tube.
Non-elaborated part of the present invention belongs to techniques well known.
The above; be only the present invention's preferably embodiment; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the embodiment of the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (1)
1. adopt a wideband low noise amplifier for noise cancellation technique, it is characterized in that comprising: the common grid amplifying stage (2) of alternative baluns (1), capacitive cross coupling and feed-forward noise cancellation stage (3); The input direct-coupling of the common grid amplifying stage (2) that two balance output ends of alternative baluns (1) are coupled with capacitive cross, be connected by capacitive coupling with the grid end of feed-forward noise cancellation stage (3), the drain terminal of feed-forward noise cancellation stage (3) is connected to the drain terminal of the common grid amplifying stage (2) of capacitive cross coupling simultaneously;
First single ended input of alternative baluns (1) is connected to signal source, and balance output end 2 and 3 is directly coupled to the source class of input transistors NM1 and NM2 of common grid amplifying stage (2) respectively, the 4th end and the 5th end ground connection;
The common grid amplifying stage (2) of capacitive cross coupling with two identical N-type transistor NM1 and NM2 as inputting amplifier tube, the grid end of NM1 and NM2 receives bias voltage vb1 respectively by large resistance R1 and R2, the grid of another termination NM2 of source class of the one termination NM1 of electric capacity C1, the grid of another termination NM1 of source class of a termination NM2 of electric capacity C2;
Feed-forward noise cancellation stage (3) is made up of two identical P-type crystal pipe PM1 and PM2, the source class of PM1 and PM2 receives power supply, the drain electrode of PM1 is connected with the drain electrode of NM1, the drain electrode of PM2 is connected with the drain electrode of NM2, and the grid of PM1 and PM2 receives bias voltage vb2 respectively by large resistance R3 and R4;
The common grid amplifying stage (2) of capacitive cross coupling and feed-forward noise cancellation stage (3) are by capacitive coupling, and the two ends of C4 receive the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 receive the source class of NM2 and the grid of PM1 respectively.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103633947A (en) * | 2013-12-03 | 2014-03-12 | 天津大学 | Noninductive and high-gain CMOS (Complementary Metal Oxide Semiconductor) broadband low-noise amplifier |
| CN103746660B (en) * | 2013-12-23 | 2017-04-05 | 中国电子科技集团公司第三十八研究所 | A kind of broadband CMOS balun low-noise amplifiers |
| CN104270100B (en) * | 2014-08-28 | 2018-03-27 | 中国科学技术大学 | A kind of low-power consumption low-noise amplifier for strengthening technology using positive feedback technique and active transconductance |
| US9628031B2 (en) * | 2014-10-29 | 2017-04-18 | Qualcomm Incorporated | Transformer feedback amplifier |
| CN107276547B (en) * | 2017-06-06 | 2020-06-26 | 江苏微远芯微系统技术有限公司 | Monolithic integrated millimeter wave switch mode power amplifier circuit |
| CN111510108B (en) * | 2020-05-13 | 2023-08-01 | 电子科技大学 | Quasi-circulator with broadband low noise and high power margin |
| US11211909B2 (en) * | 2020-06-02 | 2021-12-28 | Globalfoundries U.S. Inc. | Adjustable capacitors to improve linearity of low noise amplifier |
| CN114513176B (en) * | 2021-12-30 | 2024-03-22 | 电子科技大学 | Capacitive cross-coupling transconductance enhanced low-noise amplifier based on cascode structure |
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|---|---|---|---|---|
| CN101110573A (en) * | 2007-06-28 | 2008-01-23 | 复旦大学 | Ultra-broadband low-noise amplifier circuit adopting noise cancellation technology |
| CN101951230A (en) * | 2010-09-03 | 2011-01-19 | 华东师范大学 | Broadband low noise amplifier |
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| KR101105379B1 (en) * | 2010-08-17 | 2012-01-16 | 한국과학기술원 | Low noise amplifier and radio receiver |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101110573A (en) * | 2007-06-28 | 2008-01-23 | 复旦大学 | Ultra-broadband low-noise amplifier circuit adopting noise cancellation technology |
| CN101951230A (en) * | 2010-09-03 | 2011-01-19 | 华东师范大学 | Broadband low noise amplifier |
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