CN102946230A - Ultra-wide band low-noise single-ended input and differential output amplifier - Google Patents
Ultra-wide band low-noise single-ended input and differential output amplifier Download PDFInfo
- Publication number
- CN102946230A CN102946230A CN2012104282489A CN201210428248A CN102946230A CN 102946230 A CN102946230 A CN 102946230A CN 2012104282489 A CN2012104282489 A CN 2012104282489A CN 201210428248 A CN201210428248 A CN 201210428248A CN 102946230 A CN102946230 A CN 102946230A
- Authority
- CN
- China
- Prior art keywords
- ended
- stage
- output
- amplifier
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
Landscapes
- Amplifiers (AREA)
Abstract
The invention provides an ultra-wide band low-noise single-ended input and differential output amplifier, which is characterized in that the amplifier comprises a common-gage amplification stage (1), a single-ended-to-differential stage (2) and a capacitor cross-coupling output buffer (3), wherein an output end of the common-gate amplification stage (1) is connected with an input end of the single-ended-to-differential stage (2); and an output end of the single-ended-to-differential stage (2) is connected with an input end of the capacitor cross-coupling output buffer (3). According to amplifier, a pre-amplification stage and the single-ended-to-differential stage adopt a current reuse technology, so that one stage of current consumption can generate two stages of amplification; the common-gate amplification stage provides wide band input matching and avoids a no-source matching network; load impedances of the pre-amplification stage and the single-ended-to-differential stage are resonated at different frequencies respectively; functions of signal amplification of the wide band and single-ended-to-differential are realized by gain complementation of the pre-amplification stage and the single-ended-to-differential stage; a capacitor cross-coupling technology is applied in the output buffer additionally; amplitude and phase of an output differential signal are compensated to reach the balance between the amplitude and the phase of the differential signal; and the gain of the output buffer is increased.
Description
Technical field
The present invention relates to the single-ended input difference output low noise of a kind of ultra broadband amplifier, belong to technical field of radio frequency integrated circuits.
Background technology
Low noise amplifier is the key modules of receiver in the wireless transmitting system, and it generally links to each other with antenna, amplifies the small-signal that receives, and reduces the deterioration to signal as far as possible.Port match, gain, noise factor, power consumption and the linearity are the important technological parameters of low noise amplifier.
The amplification of the general settling signal of receiver and frequency down-conversion function, low noise amplifier amplifies the radiofrequency signal that receives, and rear class connects frequency mixer and converts radiofrequency signal to intermediate-freuqncy signal.Double balanced mixer local oscillator input and rf inputs all adopt the differential pair form, and double balanced mixer provides very high LO, RF, and the isolation between the IF, this is the major advantage of double balanced mixer.Therefore, double balanced mixer has obtained using widely in radio-frequency transmitter.Low noise amplifier need to provide the signal of difference form, so low noise amplifier often adopts the fully differential form.And antenna is single-ended often, need to carry out the conversion of single-ended transfer difference at the passive Ba Lun of sheet external application.The use of passive Ba Lun can reduce the integrated level of system, increases cost and the area of system, and the insertion loss of passive Ba Lun can directly worsen the noise factor of receiver.And the insertion loss of the passive Ba Lun of high-frequency wideband is generally all larger, in order to obtain using the cheaply receiver of double balanced mixer, and keeps lower noise factor, needs a kind of low noise amplifier with single-ended transfer difference function.
In order to realize the function of single-ended transfer difference, input signal must be transformed into homophase and two kinds of anti-phase signals.The three kinds of typical methods that have that usage comparison is general are in the prior art finished the single-ended transfer difference function.
First method is to obtain in-phase signal with common grid level to obtain inversion signal with common-source stage.The circuit of this single-ended transfer difference can be directly used in the first order of circuit, it is 201010141720.1 patent such as application number, its circuit structure can provide Input matching with the input Low ESR that is total to the grid level as shown in Figure 1, and can be total to by suitable parameter designing deletion the noise of grid level.This circuit is applicable to broadband application, but common-source amplifier and cathode-input amplifier consume one road electric current separately, has only realized one pass gain with the two-way electric current.
Second method is to obtain inversion signal with the single-stage common-source stage to obtain in-phase signal with the two-stage common-source stage.If the circuit of this single-ended transfer difference is as the first order, certain matching network need to be added and Input matching could be realized, it is 201210103136.6 patent such as application number, its circuit structure as shown in Figure 2, utilize the inductance of grid and source class to carry out Input matching, these passive devices have increased the area of device, and the common source structure of amplifying and be not suitable for broadband application.
The third method is to obtain in-phase signal with the source class follower, obtains inversion signal with common-source amplifier.The circuit of this single-ended transfer difference is not owing to providing gain, often as the afterbody of circuit, be 201210103136.6 patent such as application number, its circuit structure is as shown in Figure 3, after cascode stage was amplified, the single-ended signal after will amplifying with active Ba Lun was converted into differential signal.Because pre-amplifying stage provides certain gain before single-ended transfer difference, the noise of active Ba Lun can be suppressed.But the source class follower has broadband performance, and the common-source amplifier bandwidth is narrower, and the method for this single-ended transfer difference is difficult to be applied to the broadband.
Summary of the invention
The present invention is for solving that the gain effect that exists in the existing single-ended input difference export technique is relatively poor, power consumption is higher and can't be applied in problem in the super-broadband tech, and then the single-ended input difference output low noise of a kind of ultra broadband amplifier is provided.For this reason, the invention provides following technical scheme:
The single-ended input difference output low noise of a kind of ultra broadband amplifier, comprise common grid amplifying stage (1), single-ended transfer difference level (2) and capacitive cross coupling output buffer (3), the output of grid amplifying stage (1) is connected with the input of single-ended transfer difference level (2) altogether, and the output of single-ended transfer difference level (2) is connected with the input of capacitive cross coupling output buffer (3).
The present invention's advantage compared with prior art is:
1, pre-amplifying stage is arranged before the single-ended transfer difference circuit of the present invention, and pre-amplifying stage and single-ended transfer difference level adopts current multiplexing technology common DC electric current, can carry out the two-stage amplification with the current drain of one-level;
2, altogether grid amplifying stage of the present invention can provide the broadband Input matching, has avoided complicated passive matching network, and provides certain gain can suppress the rear class noise.The grid amplifying stage also adds volume resistance to reduce noise in traditional cathode-input amplifier altogether;
3, the present invention designs respectively resonance in different frequencies with the load impedance of pre-amplifying stage and single-ended transfer difference level, and the gain by two-stage compensates mutually to realize that wide band signal amplifies and the single-ended transfer difference function;
4, the circuit structure of design of the present invention, single-ended transfer difference level and capacitive cross coupling output buffer are combined, in the single-ended transfer difference level, use the amplitude of capacitive cross coupling technique correction output signal and the balance of phase place, again the amplitude of output difference sub-signal and the balance of phase place are compensated with electric capacity cross-couplings output buffer afterwards, can promote the single-ended transfer difference performance.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is by adopting common grid level to obtain in-phase signal obtains inversion signal with common-source stage electrical block diagram in the prior art;
Fig. 2 is by adopting the single-stage common-source stage to obtain inversion signal obtains in-phase signal with the two-stage common-source stage electrical block diagram in the prior art;
Fig. 3 is by adopting the source class follower to obtain in-phase signal obtains inversion signal with common-source amplifier electrical block diagram in the prior art;
Fig. 4 is the electrical block diagram of the single-ended input difference output low noise of the ultra broadband amplifier that provides of the specific embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
The specific embodiment of the present invention provides the single-ended input difference output low noise of a kind of ultra broadband amplifier, as shown in Figure 1, comprise common grid amplifying stage (1), single-ended transfer difference level (2) and capacitive cross coupling output buffer (3), the output of grid amplifying stage (1) is connected with the input of single-ended transfer difference level (2) altogether, and the output of single-ended transfer difference level (2) is connected with the input of capacitive cross coupling output buffer (3).
Concrete, grid amplifying stage (1) can adopt cathode-input amplifier M1 altogether, the resistance R 1 that adds can reduce noise, the source class of cathode-input amplifier M1 adopts inductance L 1 ground connection so that the source class biasing to be provided, the drain electrode of cathode-input amplifier M1 adopts inductance L 2 as load, and the Low ESR of source class input can provide the broadband Input matching;
Single-ended transfer difference level (2) adopts one-level common-source amplifier M2 to obtain anti-phase output, and adopts two-stage common-source amplifier M2 and M3 to obtain homophase output; The source class of two-stage common-source amplifier M2 and M3 by capacitor C 3 ground connection as exchanging ground, so that M2 and M3 can realize the function of common-source amplifier, the grid of NMOS pipe M5 is received in the anti-phase output of two-stage common-source amplifier M2 and M3 by capacitor C 4, the grid of NMOS pipe M4 is received in the homophase output of two-stage common-source amplifier M2 and M3 by capacitor C 5 couplings, use inductance L3 and L4 as load in the drain electrode of NMOS pipe M4 and M5, obtain differential signal Vout-and Vout+, the capacitive cross coupling technique can be proofreaied and correct the amplitude of output difference sub-signal and the balance of phase place;
Capacitive cross coupling output buffer (3) is used for in-phase signal Vout+ is received the grid of NMOS pipe M7, and receive the grid of NMOS pipe M8 by capacitor C 7 coupling, and the grid of inversion signal Vout-being received NMOS pipe M6, and receive the grid of NMOS pipe M9 by capacitor C 6 couplings.Capacitive cross coupling output buffer (3) is by changing the NMOS current source in traditional source class follower in radio frequency NMOS pipe amplifier, utilize the capacitive cross coupling technique, increased the gain of buffer, and amplitude and the phase place of output difference sub-signal compensated, can promote the balance quality of amplitude and the phase place of differential signal.
Preferably, the output of grid amplifying stage (1) is capacitively coupled to single-ended transfer difference level (2) altogether, grid amplifying stage (1) and single-ended transfer difference level (2) are by current multiplexing technology common DC electric current altogether, therefore can reduce power consumption, under identical current drain, carry out the two-stage amplification, improved simultaneously gain.
Preferably, the load impedance of grid amplifying stage (1) and single-ended transfer difference level (2) difference resonance is in different frequencies altogether, grid amplifying stage (1) can provide high-gain at the low frequency place altogether, and single-ended transfer difference level (2) then provides high-gain at high frequency treatment; Grid amplifying stage (1) and single-ended transfer difference level (2) are associated in by level high-gain are provided in the broadband altogether.
Preferably, with single-ended transfer difference level (2) and the combination of capacitive cross coupling output buffer (3), in single-ended transfer difference level (2), use the amplitude of electric capacity cross-couplings correction of typist's errors output difference sub-signal and the balance of phase place, and again the amplitude of output difference sub-signal and the balance of phase place are compensated by capacitive cross coupling output buffer (3), to promote the single-ended transfer difference performance.The circuit that this technical scheme provides improves does not increase current drain, only by having increased some capacitors, has just obtained higher buffer level gain and the Amplitude balance and phase balance performance of better differential signal.
Take 0.13um CMOS technique as example, transistor is used metal-oxide-semiconductor entirely, supply voltage 1.3V, and main body circuitry consumes electric current 3.5mA, buffer depletion electric current 2mA, the Simulation results of specific embodiment of the invention is as shown in the table:
| Index | Numerical value | Unit |
| Bandwidth | >2 | GHz |
| Power consumption | 9 | mW |
| S11 | <-10 | dB |
| Noise factor | <3 | dB |
| Power gain | >20 | dB |
| The amplitude balance error | <0.1 | dB |
| The phase equilibrium error | <0.1 | Degree |
The technical scheme that adopts this embodiment to provide, can realize following technique effect:
1, pre-amplifying stage is arranged before the single-ended transfer difference circuit of the present invention, and pre-amplifying stage and single-ended transfer difference level adopts current multiplexing technology common DC electric current, can carry out the two-stage amplification with the current drain of one-level;
2, altogether grid amplifying stage of the present invention can provide the broadband Input matching, has avoided complicated passive matching network, and provides certain gain can suppress the rear class noise.The grid amplifying stage also adds volume resistance to reduce noise in traditional cathode-input amplifier altogether;
3, the present invention designs respectively resonance in different frequencies with the load impedance of pre-amplifying stage and single-ended transfer difference level, and the gain by two-stage compensates mutually to realize that wide band signal amplifies and the single-ended transfer difference function;
4, the circuit structure of design of the present invention, single-ended transfer difference level and capacitive cross coupling output buffer are combined, in the single-ended transfer difference level, use the amplitude of capacitive cross coupling technique correction output signal and the balance of phase place, again the amplitude of output difference sub-signal and the balance of phase place are compensated with electric capacity cross-couplings output buffer afterwards, can promote the single-ended transfer difference performance.
The above; only be the better embodiment of the present invention; but protection scope of the present invention is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the embodiment of the invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (5)
1. the single-ended input difference output low noise of ultra broadband amplifier, it is characterized in that, comprise common grid amplifying stage (1), single-ended transfer difference level (2) and capacitive cross coupling output buffer (3), the output of grid amplifying stage (1) is connected with the input of single-ended transfer difference level (2) altogether, and the output of single-ended transfer difference level (2) is connected with the input of capacitive cross coupling output buffer (3).
2. the single-ended input difference output low noise of ultra broadband according to claim 1 amplifier is characterized in that:
Grid amplifying stage (1) adopts cathode-input amplifier M1 altogether, and the source class of cathode-input amplifier M1 adopts inductance L 1 ground connection so that the source class biasing to be provided, and the drain electrode of cathode-input amplifier M1 adopts inductance L 2 as load;
Single-ended transfer difference level (2) adopts one-level common-source amplifier M2 to obtain anti-phase output, and adopts two-stage common-source amplifier M2 and M3 to obtain homophase output; The source class of two-stage common-source amplifier M2 and M3 is by capacitor C 3 ground connection, the grid of NMOS pipe M5 is received in the anti-phase output of two-stage common-source amplifier M2 and M3 by capacitor C 4, the grid of NMOS pipe M4 is received in the homophase output of two-stage common-source amplifier M2 and M3 by capacitor C 5 couplings, use inductance L3 and L4 as load in the drain electrode of NMOS pipe M4 and M5, obtain differential signal Vout-and Vout+;
Capacitive cross coupling output buffer (3) is used for in-phase signal Vout+ is received the grid of NMOS pipe M7, and receive the grid of NMOS pipe M8 by capacitor C 7 coupling, and the grid of inversion signal Vout-being received NMOS pipe M6, and receive the grid of NMOS pipe M9 by capacitor C 6 couplings.
3. the single-ended input difference output low noise of ultra broadband according to claim 1 amplifier, it is characterized in that, the output of grid amplifying stage (1) is capacitively coupled to single-ended transfer difference level (2) altogether, and grid amplifying stage (1) and single-ended transfer difference level (2) are by current multiplexing technology common DC electric current altogether.
4. the single-ended input difference output low noise of ultra broadband according to claim 1 amplifier, it is characterized in that, resonance is in different frequencies respectively for the load impedance of grid amplifying stage (1) and single-ended transfer difference level (2) altogether, and grid amplifying stage (1) and single-ended transfer difference level (2) are associated in by level high-gain is provided in the broadband altogether.
5. the single-ended input difference output low noise of ultra broadband according to claim 1 amplifier, it is characterized in that, with single-ended transfer difference level (2) and the combination of capacitive cross coupling output buffer (3), in single-ended transfer difference level (2), use the amplitude of electric capacity cross-couplings correction of typist's errors output difference sub-signal and the balance of phase place, and again the amplitude of output difference sub-signal and the balance of phase place are compensated by capacitive cross coupling output buffer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210428248.9A CN102946230B (en) | 2012-10-31 | 2012-10-31 | A kind of ultra broadband single ended input difference output low noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210428248.9A CN102946230B (en) | 2012-10-31 | 2012-10-31 | A kind of ultra broadband single ended input difference output low noise amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102946230A true CN102946230A (en) | 2013-02-27 |
| CN102946230B CN102946230B (en) | 2015-08-12 |
Family
ID=47729146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210428248.9A Expired - Fee Related CN102946230B (en) | 2012-10-31 | 2012-10-31 | A kind of ultra broadband single ended input difference output low noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102946230B (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103095222A (en) * | 2012-12-11 | 2013-05-08 | 中国科学技术大学 | Active Balun with mismatch compensation technology |
| CN103746660A (en) * | 2013-12-23 | 2014-04-23 | 中国电子科技集团公司第三十八研究所 | Broadband CMOS (Complementary Metal-Oxide-Semiconductor Transistor) balun low noise amplifier |
| CN104158504A (en) * | 2014-08-19 | 2014-11-19 | 上海集成电路研发中心有限公司 | Broadband low-noise amplifier |
| CN104539242A (en) * | 2014-04-21 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | Current multiplexing low noise amplifier |
| CN104779919A (en) * | 2015-05-04 | 2015-07-15 | 中国电子科技集团公司第五十四研究所 | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) |
| CN104883136A (en) * | 2015-05-05 | 2015-09-02 | 电子科技大学 | Negative resistance single-end CMOS (commentary metal oxide semiconductor) low-nose amplifier |
| CN105245228A (en) * | 2015-09-28 | 2016-01-13 | 威海北洋光电信息技术股份公司 | Signal collection control circuit |
| CN105281681A (en) * | 2015-10-21 | 2016-01-27 | 上海集成电路研发中心有限公司 | Single-end to double-end conversion broadband amplifier |
| CN105720930A (en) * | 2016-04-14 | 2016-06-29 | 武汉芯泰科技有限公司 | Single-end input and double-end output gain adjustable low noise amplifier |
| CN107493078A (en) * | 2016-06-13 | 2017-12-19 | 英特尔Ip公司 | Amplifying circuit, low-noise amplifier, the apparatus and method for being amplified |
| CN107888184A (en) * | 2017-11-27 | 2018-04-06 | 上海华力微电子有限公司 | The buffer circuits and sampling hold circuit of single-ended transfer difference circuit and its composition |
| CN109379050A (en) * | 2014-02-28 | 2019-02-22 | 瑞典爱立信有限公司 | Amplifier circuit in low noise |
| CN110083562A (en) * | 2018-01-26 | 2019-08-02 | 辉达公司 | The system and method that reference noise for single ended serial link compensates |
| CN110113013A (en) * | 2019-06-27 | 2019-08-09 | 中国电子科技集团公司第五十四研究所 | A kind of high octave ultra wide band input matching circuit for low-noise amplifier |
| CN110784179A (en) * | 2019-10-22 | 2020-02-11 | 北京信芯科技有限公司 | Double-balance FET mixer |
| CN111903054A (en) * | 2018-06-30 | 2020-11-06 | 华为技术有限公司 | Single-ended to differential amplifier and radio frequency receiver |
| CN111934629A (en) * | 2020-07-24 | 2020-11-13 | 成都天锐星通科技有限公司 | Broadband high-linearity power amplifier |
| CN116505898A (en) * | 2023-06-30 | 2023-07-28 | 成都通量科技有限公司 | Ultra-wideband millimeter wave low-noise amplifier with single slip function |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1538624A (en) * | 2003-10-24 | 2004-10-20 | 清华大学 | Low converter possessing high symmetricity and linearity |
| US20070290754A1 (en) * | 2006-06-15 | 2007-12-20 | Samsung Electronics Co., Ltd. | Push-pull amplifier and method for low noise amplification |
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
-
2012
- 2012-10-31 CN CN201210428248.9A patent/CN102946230B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1538624A (en) * | 2003-10-24 | 2004-10-20 | 清华大学 | Low converter possessing high symmetricity and linearity |
| US20070290754A1 (en) * | 2006-06-15 | 2007-12-20 | Samsung Electronics Co., Ltd. | Push-pull amplifier and method for low noise amplification |
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
Cited By (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103095222B (en) * | 2012-12-11 | 2015-04-22 | 中国科学技术大学 | Active Balun with mismatch compensation technology |
| CN103095222A (en) * | 2012-12-11 | 2013-05-08 | 中国科学技术大学 | Active Balun with mismatch compensation technology |
| CN103746660A (en) * | 2013-12-23 | 2014-04-23 | 中国电子科技集团公司第三十八研究所 | Broadband CMOS (Complementary Metal-Oxide-Semiconductor Transistor) balun low noise amplifier |
| CN103746660B (en) * | 2013-12-23 | 2017-04-05 | 中国电子科技集团公司第三十八研究所 | A kind of broadband CMOS balun low-noise amplifiers |
| CN109379050A (en) * | 2014-02-28 | 2019-02-22 | 瑞典爱立信有限公司 | Amplifier circuit in low noise |
| CN109379050B (en) * | 2014-02-28 | 2022-08-09 | 瑞典爱立信有限公司 | Low noise amplifier circuit |
| CN104539242B (en) * | 2014-04-21 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | current multiplexing low-noise amplifier |
| CN104539242A (en) * | 2014-04-21 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | Current multiplexing low noise amplifier |
| CN104158504B (en) * | 2014-08-19 | 2018-01-02 | 上海集成电路研发中心有限公司 | A kind of wideband low noise amplifier |
| CN104158504A (en) * | 2014-08-19 | 2014-11-19 | 上海集成电路研发中心有限公司 | Broadband low-noise amplifier |
| CN104779919B (en) * | 2015-05-04 | 2018-03-02 | 中国电子科技集团公司第五十四研究所 | A kind of ultra wide band low-power consumption low-noise amplifier of automatic biasing |
| CN104779919A (en) * | 2015-05-04 | 2015-07-15 | 中国电子科技集团公司第五十四研究所 | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) |
| CN104883136B (en) * | 2015-05-05 | 2017-12-15 | 电子科技大学 | A kind of single-ended grid CMOS low-noise amplifiers altogether of negative resistance formula |
| CN104883136A (en) * | 2015-05-05 | 2015-09-02 | 电子科技大学 | Negative resistance single-end CMOS (commentary metal oxide semiconductor) low-nose amplifier |
| CN105245228B (en) * | 2015-09-28 | 2018-11-30 | 威海北洋光电信息技术股份公司 | A kind of signal acquisition control circuit |
| CN105245228A (en) * | 2015-09-28 | 2016-01-13 | 威海北洋光电信息技术股份公司 | Signal collection control circuit |
| CN105281681A (en) * | 2015-10-21 | 2016-01-27 | 上海集成电路研发中心有限公司 | Single-end to double-end conversion broadband amplifier |
| CN105281681B (en) * | 2015-10-21 | 2018-08-28 | 上海集成电路研发中心有限公司 | A kind of broadband single to differential amplifier |
| CN105720930B (en) * | 2016-04-14 | 2018-05-29 | 武汉芯泰科技有限公司 | A kind of low-noise amplifier of the adjustable gain of single ended input both-end output |
| CN105720930A (en) * | 2016-04-14 | 2016-06-29 | 武汉芯泰科技有限公司 | Single-end input and double-end output gain adjustable low noise amplifier |
| CN107493078A (en) * | 2016-06-13 | 2017-12-19 | 英特尔Ip公司 | Amplifying circuit, low-noise amplifier, the apparatus and method for being amplified |
| CN107888184A (en) * | 2017-11-27 | 2018-04-06 | 上海华力微电子有限公司 | The buffer circuits and sampling hold circuit of single-ended transfer difference circuit and its composition |
| CN107888184B (en) * | 2017-11-27 | 2021-08-13 | 上海华力微电子有限公司 | Single-end-to-differential circuit and buffer circuit and sample hold circuit formed by same |
| CN110083562A (en) * | 2018-01-26 | 2019-08-02 | 辉达公司 | The system and method that reference noise for single ended serial link compensates |
| CN110083562B (en) * | 2018-01-26 | 2023-05-09 | 辉达公司 | System and method for reference noise compensation for single ended serial links |
| US11606069B2 (en) | 2018-06-30 | 2023-03-14 | Huawei Technologies Co., Ltd. | Single-ended-to-differential amplifier and radio frequency receiver |
| CN111903054A (en) * | 2018-06-30 | 2020-11-06 | 华为技术有限公司 | Single-ended to differential amplifier and radio frequency receiver |
| CN111903054B (en) * | 2018-06-30 | 2022-07-12 | 华为技术有限公司 | Single-ended to differential amplifier and radio frequency receiver |
| CN110113013A (en) * | 2019-06-27 | 2019-08-09 | 中国电子科技集团公司第五十四研究所 | A kind of high octave ultra wide band input matching circuit for low-noise amplifier |
| CN110113013B (en) * | 2019-06-27 | 2024-03-22 | 中国电子科技集团公司第五十四研究所 | High octave ultra-wideband input matching circuit for low noise amplifier |
| CN110784179A (en) * | 2019-10-22 | 2020-02-11 | 北京信芯科技有限公司 | Double-balance FET mixer |
| CN110784179B (en) * | 2019-10-22 | 2022-01-25 | 北京信芯科技有限公司 | Double-balance FET mixer |
| CN111934629A (en) * | 2020-07-24 | 2020-11-13 | 成都天锐星通科技有限公司 | Broadband high-linearity power amplifier |
| CN116505898A (en) * | 2023-06-30 | 2023-07-28 | 成都通量科技有限公司 | Ultra-wideband millimeter wave low-noise amplifier with single slip function |
| CN116505898B (en) * | 2023-06-30 | 2023-10-10 | 成都通量科技有限公司 | Ultra-wideband millimeter wave low-noise amplifier with single slip function |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102946230B (en) | 2015-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102946230B (en) | A kind of ultra broadband single ended input difference output low noise amplifier | |
| CN103248324B (en) | A kind of high linearity low noise amplifier | |
| CN100596018C (en) | Wideband low noise amplifier | |
| CN103219951B (en) | A kind of low-power consumption low noise amplifier adopting noise cancellation technique | |
| CN103532497B (en) | A kind of ultra-wideband low-noise amplifier using inductance compensation technology | |
| CN102084589B (en) | Method of achieving high selectivity in receiver RF front-ends | |
| CN102163955B (en) | Low-noise amplifier adopting single-ended input and differential output | |
| CN101895265A (en) | Full differential CMOS multimode low-noise amplifier | |
| CN103117711A (en) | Monolithic integrated radio frequency high-gain low-noise amplifier | |
| CN102497167A (en) | Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation | |
| CN103219952B (en) | A kind of wideband low noise amplifier adopting noise cancellation technique | |
| CN106921346A (en) | High linearity wide band upper frequency mixer | |
| CN103236821B (en) | A kind of multimode multi-channel mixer based on adjustable negative resistance structure | |
| CN104167993A (en) | Differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted | |
| CN103117712A (en) | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier | |
| CN102801389A (en) | Ultra-low power consumption low-noise amplifier | |
| CN103595357A (en) | 0.1-1.2GHz CMOS (complementary metal oxide semiconductor) ultra-wideband radiofrequency power amplifier | |
| CN103746666A (en) | Differential power amplifier for CMOS with radio frequency of 0.1-1.2GHz | |
| CN204697010U (en) | Wideband low noise amplifier | |
| CN103684268A (en) | Low power consumption and high linearity gain controllable active orthogonal frequency mixer | |
| CN104065346A (en) | Broadband low noise amplifier circuit based on cross-coupled feedback | |
| CN102324896A (en) | Low-noise broadband amplifier with linearity compensation | |
| CN100559706C (en) | Radio-frequency differential-to-single-ended converter | |
| CN202772848U (en) | Fully third generation telecommunication (3G) complementary metal oxide semiconductor (CMOS) difference low noise amplifier based on controllable active inductor | |
| CN110708025A (en) | Power amplifier using diode compensation capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150812 Termination date: 20211031 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |