CN102946230B - A kind of ultra broadband single ended input difference output low noise amplifier - Google Patents
A kind of ultra broadband single ended input difference output low noise amplifier Download PDFInfo
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- CN102946230B CN102946230B CN201210428248.9A CN201210428248A CN102946230B CN 102946230 B CN102946230 B CN 102946230B CN 201210428248 A CN201210428248 A CN 201210428248A CN 102946230 B CN102946230 B CN 102946230B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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Abstract
The invention provides a kind of ultra broadband single ended input difference output low noise amplifier, it is characterized in that, comprise common grid amplifying stage (1), single-ended transfer difference level (2) and capacitive cross coupling output buffer (3), the output of grid amplifying stage (1) is connected with the input of single-ended transfer difference level (2) altogether, and the output of single-ended transfer difference level (2) is connected with the input of capacitive cross coupling output buffer (3).Pre-amplification stage of the present invention and single-ended transfer difference level adopt current multiplexing technology, can carry out two-stage amplification with the current drain of one-level; Grid amplifying stage provides broadband Input matching altogether, avoids passive matching network; The load impedance of pre-amplification stage and single-ended transfer difference level is distinguished resonance at different frequency, realizes wide band signal by the gain complementation of two-stage and amplify and single-ended transfer difference function; In output buffer, add capacitive cross coupling technique, the Amplitude balance and phase balance reaching differential signal is compensated to the amplitude of output difference sub-signal and phase place, and adds the gain of buffer.
Description
Technical field
The present invention relates to a kind of ultra broadband single ended input difference output low noise amplifier, belong to technical field of radio frequency integrated circuits.
Background technology
Low noise amplifier is the key modules of receiver in wireless transmitting system, and it is generally connected with antenna, amplifies the small-signal received, and reduces the deterioration to signal as far as possible.Port match, gain, noise factor, power consumption and the linearity are the important technological parameters of low noise amplifier.
The amplification of the general settling signal of receiver and frequency down-conversion function, the radiofrequency signal received is amplified by low noise amplifier, and rear class connects frequency mixer and converts radiofrequency signal to intermediate-freuqncy signal.Double balanced mixer local oscillator input and rf inputs all adopt differential pair form, and double balanced mixer provides very high LO, the isolation between RF, IF, and this is the major advantage of double balanced mixer.Therefore, in radio-frequency transmitter, double balanced mixer obtains and uses widely.Low noise amplifier needs the signal providing difference form, and therefore low noise amplifier often adopts fully differential form.And antenna is single-ended often, need at the passive Ba Lun of sheet external application to carry out the conversion of single-ended transfer difference.The use of passive Ba Lun can reduce the integrated level of system, increases the cost of system and area, and the insertion loss of passive Ba Lun can the noise factor of direct deteriorates reception machine.And the insertion loss of the passive Ba Lun of high-frequency wideband is general all comparatively large, in order to obtain the receiver of the low cost using double balanced mixer, and keeps lower noise factor, needing a kind of low noise amplifier with single-ended transfer difference function.
In order to realize the function of single-ended transfer difference, input signal must be transformed into homophase and anti-phase two kinds of signals.Using in the prior art commonplace has three kinds of typical methods to complete single-ended transfer difference function.
First method obtains in-phase signal common-source stage by common grid level to obtain inversion signal.The circuit of this single-ended transfer difference can be directly used in the first order of circuit, if application number is the patent of 201010141720.1, its circuit structure as shown in Figure 1, can provide Input matching with the input Low ESR being total to grid level, and can be deleted the noise of grid level altogether by suitable parameter designing.This circuit is applicable to broadband application, but common-source amplifier and cathode-input amplifier consume a road electric current separately, only achieve one pass gain with two-way electric current.
Second method obtains inversion signal two-stage common-source stage with single-stage common-source stage to obtain in-phase signal.If the circuit of this single-ended transfer difference is as the first order, need to add certain matching network and could realize Input matching, if application number is the patent of 201210103136.6, its circuit structure as shown in Figure 2, the inductance of grid and source class is utilized to carry out Input matching, these passive devices add the area of device, and common source amplify structure and be not suitable for broadband application.
The third method obtains in-phase signal with source class follower, obtains inversion signal with common-source amplifier.The circuit of this single-ended transfer difference is not owing to providing gain, often as the afterbody of circuit, if application number is the patent of 201210103136.6, its circuit structure as shown in Figure 3, after cascode stage is amplified, with active Ba Lun, the single-ended signal after amplification is converted into differential signal.Because before single-ended transfer difference, pre-amplification stage provides certain gain, the noise of active Ba Lun can be suppressed.But source class follower has broadband performance, and common-source amplifier bandwidth is narrower, and the method for this single-ended transfer difference is difficult to be applied to broadband.
Summary of the invention
The present invention solves the problem that the gain effect existed in existing single ended input difference output technology is poor, power consumption is higher and cannot be applied in super-broadband tech, and then provides a kind of ultra broadband single ended input difference output low noise amplifier.For this reason, the invention provides following technical scheme:
A kind of ultra broadband single ended input difference output low noise amplifier, comprise common grid amplifying stage (1), single-ended transfer difference level (2) and capacitive cross coupling output buffer (3), the output of grid amplifying stage (1) is connected with the input of single-ended transfer difference level (2) altogether, and the output of single-ended transfer difference level (2) is connected with the input of capacitive cross coupling output buffer (3).
The present invention's advantage is compared with prior art:
1, have pre-amplification stage before single-ended transfer difference circuit of the present invention, and pre-amplification stage and single-ended transfer difference level adopt current multiplexing technology common DC electric current, can carry out two-stage amplification with the current drain of one-level;
2, grid amplifying stage altogether of the present invention can provide broadband Input matching, avoids complicated passive matching network, and provides certain gain can suppress rear class noise.Grid amplifying stage also adds volume resistance to reduce noise in traditional cathode-input amplifier altogether;
3, the load impedance of pre-amplification stage and single-ended transfer difference level is designed resonance in different frequencies by the present invention respectively, is mutually compensated realize the amplification of wide band signal and single-ended transfer difference function by the gain of two-stage;
4, the circuit structure of design of the present invention, single-ended transfer difference level and capacitive cross coupling output buffer are combined, the amplitude of capacitive cross coupling technique correction output signal and the balance of phase place is used in single-ended transfer difference level, again the amplitude of output difference sub-signal and the balance of phase place are compensated with electric capacity cross-couplings output buffer afterwards, single-ended transfer difference performance can be promoted.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is by adopting grid level altogether to obtain the electrical block diagram that in-phase signal common-source stage obtains inversion signal in prior art;
Fig. 2 is by adopting single-stage common-source stage to obtain the electrical block diagram that inversion signal two-stage common-source stage obtains in-phase signal in prior art;
Fig. 3 is by adopting source class follower to obtain the electrical block diagram that in-phase signal common-source amplifier obtains inversion signal in prior art;
Fig. 4 is the electrical block diagram of the ultra broadband single ended input difference output low noise amplifier that the specific embodiment of the present invention provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The specific embodiment of the present invention provides a kind of ultra broadband single ended input difference output low noise amplifier, as shown in Figure 1, comprise common grid amplifying stage (1), single-ended transfer difference level (2) and capacitive cross coupling output buffer (3), the output of grid amplifying stage (1) is connected with the input of single-ended transfer difference level (2) altogether, and the output of single-ended transfer difference level (2) is connected with the input of capacitive cross coupling output buffer (3).
Concrete, grid amplifying stage (1) can adopt cathode-input amplifier M1 altogether, the resistance R1 added can reduce noise, the source class of cathode-input amplifier M1 adopts inductance L 1 ground connection to be biased to provide source class, the drain electrode of cathode-input amplifier M1 adopts inductance L 2 as load, and the Low ESR of source class input can provide broadband Input matching;
Single-ended transfer difference level (2) adopts one-level common-source amplifier M2 to obtain anti-phase output, and adopts two-stage common-source amplifier M2 and M3 to obtain homophase output; The source class of two-stage common-source amplifier M2 and M3 passes through electric capacity C3 ground connection as AC deposition, make M2 and M3 can realize the function of common-source amplifier, the grid of NMOS tube M5 is received in the anti-phase output of two-stage common-source amplifier M2 and M3 by electric capacity C4, the homophase of two-stage common-source amplifier M2 and M3 exports the grid being received NMOS tube M4 by electric capacity C5 coupling, in the drain electrode of NMOS tube M4 and M5 with inductance L3 and L4 as load, obtain differential signal Vout-and Vout+, capacitive cross coupling technique can correct the amplitude of output difference sub-signal and the balance of phase place;
Capacitive cross coupling output buffer (3) is for receiving the grid of NMOS tube M7 by in-phase signal Vout+, and the grid of NMOS tube M8 is received by electric capacity C7 coupling, and inversion signal Vout-is received the grid of NMOS tube M6, and receive the grid of NMOS tube M9 by electric capacity C6 coupling.Capacitive cross coupling output buffer (3) is by changing the NMOS current source in traditional source class follower into radio frequency NMOS tube amplifier, utilize capacitive cross coupling technique, add the gain of buffer, and the amplitude of output difference sub-signal and phase place are compensated, the amplitude of differential signal and the balance quality of phase place can be promoted.
Preferably, the output of grid amplifying stage (1) is capacitively coupled to single-ended transfer difference level (2) altogether, grid amplifying stage (1) and single-ended transfer difference level (2) are by current multiplexing technology common DC electric current altogether, therefore power consumption can be reduced, under identical current drain, carry out two-stage amplification, improve gain simultaneously.
Preferably, the load impedance difference resonance of grid amplifying stage (1) and single-ended transfer difference level (2) is in different frequencies altogether, grid amplifying stage (1) can provide high-gain at low frequency place altogether, and single-ended transfer difference level (2) then provides high-gain at high frequency treatment; Grid amplifying stage (1) and single-ended transfer difference level (2) are associated in broadband by level and provide high-gain altogether.
Preferably, single-ended transfer difference level (2) and capacitive cross coupling output buffer (3) are combined, the amplitude of output difference sub-signal and the balance of phase place is corrected with electric capacity cross-coupling technique in single-ended transfer difference level (2), and again the amplitude of output difference sub-signal and the balance of phase place are compensated by capacitive cross coupling output buffer (3), to promote single-ended transfer difference performance.The circuits improvement that this technical scheme provides does not increase current drain, only by adding some capacitors, just obtains higher buffer level gain and the Amplitude balance and phase balance performance of better differential signal.
For 0.13um CMOS technology, transistor uses metal-oxide-semiconductor entirely, supply voltage 1.3V, main body circuit current sinking 3.5mA, buffer depletion electric current 2mA, and the Simulation results of specific embodiment of the invention is as shown in the table:
| Index | Numerical value | Unit |
| Bandwidth | >2 | GHz |
| Power consumption | 9 | mW |
| S11 | <-10 | dB |
| Noise factor | <3 | dB |
| Power gain | >20 | dB |
| Amplitude balance error | <0.1 | dB |
| Phase equilibrium error | <0.1 | Degree |
Adopt the technical scheme that this embodiment provides, following technique effect can be realized:
1, have pre-amplification stage before single-ended transfer difference circuit of the present invention, and pre-amplification stage and single-ended transfer difference level adopt current multiplexing technology common DC electric current, can carry out two-stage amplification with the current drain of one-level;
2, grid amplifying stage altogether of the present invention can provide broadband Input matching, avoids complicated passive matching network, and provides certain gain can suppress rear class noise.Grid amplifying stage also adds volume resistance to reduce noise in traditional cathode-input amplifier altogether;
3, the load impedance of pre-amplification stage and single-ended transfer difference level is designed resonance in different frequencies by the present invention respectively, is mutually compensated realize the amplification of wide band signal and single-ended transfer difference function by the gain of two-stage;
4, the circuit structure of design of the present invention, single-ended transfer difference level and capacitive cross coupling output buffer are combined, the amplitude of capacitive cross coupling technique correction output signal and the balance of phase place is used in single-ended transfer difference level, again the amplitude of output difference sub-signal and the balance of phase place are compensated with electric capacity cross-couplings output buffer afterwards, single-ended transfer difference performance can be promoted.
The above; be only the present invention's preferably embodiment; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the embodiment of the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (4)
1. a ultra broadband single ended input difference output low noise amplifier, it is characterized in that, comprise common grid amplifying stage (1), single-ended transfer difference level (2) and capacitive cross coupling output buffer (3), the output of grid amplifying stage (1) is connected with the input of single-ended transfer difference level (2) altogether, and the output of single-ended transfer difference level (2) is connected with the input of capacitive cross coupling output buffer (3);
Wherein, grid amplifying stage (1) adopts cathode-input amplifier M1 altogether, and the source electrode of cathode-input amplifier M1 adopts inductance L 1 ground connection to provide source-biased, and the drain electrode of cathode-input amplifier M1 adopts inductance L 2 as load;
Single-ended transfer difference level (2) adopts one-level common-source amplifier M2 to obtain anti-phase output, and adopts two-stage common-source amplifier M2 and M3 to obtain homophase output; The source electrode of two-stage common-source amplifier M2 and M3 is by electric capacity C3 ground connection, the grid of NMOS tube M5 is received in the anti-phase output of two-stage common-source amplifier M2 and M3 by electric capacity C4, the homophase of two-stage common-source amplifier M2 and M3 exports the grid being received NMOS tube M4 by electric capacity C5 coupling, in the drain electrode of NMOS tube M4 and M5 with inductance L3 and L4 as load, obtain differential signal Vout-and Vout+;
Capacitive cross coupling output buffer (3) is for receiving the grid of NMOS tube M7 by in-phase signal Vout+, and the grid of NMOS tube M8 is received by electric capacity C7 coupling, and inversion signal Vout-is received the grid of NMOS tube M6, and receive the grid of NMOS tube M9 by electric capacity C6 coupling.
2. ultra broadband single ended input difference output low noise amplifier according to claim 1, it is characterized in that, the output of grid amplifying stage (1) is capacitively coupled to single-ended transfer difference level (2) altogether, and grid amplifying stage (1) and single-ended transfer difference level (2) are by current multiplexing technology common DC electric current altogether.
3. ultra broadband single ended input difference output low noise amplifier according to claim 1, it is characterized in that, resonance is in different frequencies respectively for the load impedance of grid amplifying stage (1) and single-ended transfer difference level (2) altogether, and grid amplifying stage (1) and single-ended transfer difference level (2) are associated in broadband by level and provide high-gain altogether.
4. ultra broadband single ended input difference output low noise amplifier according to claim 1, it is characterized in that, single-ended transfer difference level (2) and capacitive cross coupling output buffer (3) are combined, in single-ended transfer difference level (2), correct the amplitude of output difference sub-signal and the balance of phase place with electric capacity cross-coupling technique, and again the amplitude of output difference sub-signal and the balance of phase place are compensated by capacitive cross coupling output buffer (3).
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| CN201210428248.9A CN102946230B (en) | 2012-10-31 | 2012-10-31 | A kind of ultra broadband single ended input difference output low noise amplifier |
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| CN201210428248.9A CN102946230B (en) | 2012-10-31 | 2012-10-31 | A kind of ultra broadband single ended input difference output low noise amplifier |
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| CN102946230A CN102946230A (en) | 2013-02-27 |
| CN102946230B true CN102946230B (en) | 2015-08-12 |
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| CN103095222B (en) * | 2012-12-11 | 2015-04-22 | 中国科学技术大学 | Active Balun with mismatch compensation technology |
| CN103746660B (en) * | 2013-12-23 | 2017-04-05 | 中国电子科技集团公司第三十八研究所 | A kind of broadband CMOS balun low-noise amplifiers |
| EP2913922A1 (en) * | 2014-02-28 | 2015-09-02 | Telefonaktiebolaget L M Ericsson (publ) | A low noise amplifier circuit |
| CN104539242B (en) * | 2014-04-21 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | current multiplexing low-noise amplifier |
| CN104158504B (en) * | 2014-08-19 | 2018-01-02 | 上海集成电路研发中心有限公司 | A kind of wideband low noise amplifier |
| CN104779919B (en) * | 2015-05-04 | 2018-03-02 | 中国电子科技集团公司第五十四研究所 | A kind of ultra wide band low-power consumption low-noise amplifier of automatic biasing |
| CN104883136B (en) * | 2015-05-05 | 2017-12-15 | 电子科技大学 | A kind of single-ended grid CMOS low-noise amplifiers altogether of negative resistance formula |
| CN105245228B (en) * | 2015-09-28 | 2018-11-30 | 威海北洋光电信息技术股份公司 | A kind of signal acquisition control circuit |
| CN105281681B (en) * | 2015-10-21 | 2018-08-28 | 上海集成电路研发中心有限公司 | A kind of broadband single to differential amplifier |
| CN105720930B (en) * | 2016-04-14 | 2018-05-29 | 武汉芯泰科技有限公司 | A kind of low-noise amplifier of the adjustable gain of single ended input both-end output |
| EP3258597B1 (en) * | 2016-06-13 | 2020-07-29 | Intel IP Corporation | Amplification circuit, apparatus for amplifying, low noise amplifier, radio receiver, mobile terminal, base station, and method for amplifying |
| CN107888184B (en) * | 2017-11-27 | 2021-08-13 | 上海华力微电子有限公司 | Single-end-to-differential circuit and buffer circuit and sample hold circuit formed by same |
| US10187094B1 (en) * | 2018-01-26 | 2019-01-22 | Nvidia Corporation | System and method for reference noise compensation for single-ended serial links |
| EP3790189A4 (en) * | 2018-06-30 | 2021-05-05 | Huawei Technologies Co., Ltd. | Single end slip differential amplifier and radio frequency receiver |
| CN110896300A (en) * | 2018-09-12 | 2020-03-20 | 武汉芯泰科技有限公司 | Broadband low-noise amplifier |
| CN110113013B (en) * | 2019-06-27 | 2024-03-22 | 中国电子科技集团公司第五十四研究所 | High octave ultra-wideband input matching circuit for low noise amplifier |
| CN110784179B (en) * | 2019-10-22 | 2022-01-25 | 北京信芯科技有限公司 | Double-balance FET mixer |
| CN111934629B (en) * | 2020-07-24 | 2021-06-11 | 成都天锐星通科技有限公司 | Broadband high-linearity power amplifier |
| CN116505898B (en) * | 2023-06-30 | 2023-10-10 | 成都通量科技有限公司 | Ultra-wideband millimeter wave low-noise amplifier with single slip function |
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| KR100748721B1 (en) * | 2006-06-15 | 2007-08-13 | 삼성전자주식회사 | Push-pull amplifier and method for low noise amplification |
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| CN1538624A (en) * | 2003-10-24 | 2004-10-20 | 清华大学 | Low converter possessing high symmetricity and linearity |
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
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