CN111934629A - Broadband high-linearity power amplifier - Google Patents
Broadband high-linearity power amplifier Download PDFInfo
- Publication number
- CN111934629A CN111934629A CN202010721281.5A CN202010721281A CN111934629A CN 111934629 A CN111934629 A CN 111934629A CN 202010721281 A CN202010721281 A CN 202010721281A CN 111934629 A CN111934629 A CN 111934629A
- Authority
- CN
- China
- Prior art keywords
- stage
- amplifier
- power amplifier
- capacitor
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
Abstract
The invention discloses a broadband high-linearity power amplifier which comprises an input matching network, a first-stage driving amplifier 100, a first inter-stage matching network, a second-stage driving amplifier 200, a second inter-stage matching network, an output-stage power amplifier 300 and an output matching network which are sequentially connected, wherein the first-stage driving amplifier 100, the second-stage driving amplifier 200 and the output-stage power amplifier 300 respectively comprise differential capacitance neutralizing amplifiers and second harmonic short-circuit circuits which are symmetrically arranged from side to side. Through the mode, the amplitude linearity and the phase linearity of the power amplifier can be improved, the third-order intermodulation is restrained, the capability of the power amplifier for transmitting high-power broadband high-order modulation signals is enhanced, on the other hand, the influence caused by common-mode interference signals is restrained, the reliability of the power amplifier is enhanced, and the working capability of the power amplifier at high frequency is integrally improved.
Description
Technical Field
The invention relates to the technical field of electronic circuit design, in particular to a broadband high-linearity power amplifier.
Background
In recent years, new-generation communication technologies have been developed rapidly, and communication based on the sub-6GHz band has not been able to meet the increasing bandwidth requirement, so communication based on high frequency above 6GHz, such as millimeter wave 5G communication, broadband satellite communication, etc., has become a development direction of great interest. The small-sized devices used for high-frequency communication enable a large-scale phased array technology, which can effectively compensate for high loss of the high-frequency communication and improve the coverage capability of the high-frequency communication, and thus, the phased array technology is widely used in high-frequency communication systems. By the multi-antenna array and the beam forming technology, the large-scale phased array system can realize higher output power to overcome the propagation loss; meanwhile, the direction of the wave beam can be adjusted according to the real-time requirement of the user, and flexible signal coverage is provided. The large-scale phased array system can realize ultra-high-speed and low-delay wireless communication by matching with broadband high-order modulation signals (such as 64-QAM and 256-QAM). However, with respect to a constant envelope signal (e.g., QPSK), a wideband high order modulation signal has higher requirements on amplitude linearity and phase linearity of the system; meanwhile, the extremely high peak-to-average ratio of the broadband high-order modulation signal also provides a challenge for the linearity of a large-scale phased array system.
The power amplifier is positioned at the antenna end of each array element of the large-scale phased array system, is a main source of nonlinear characteristics of the whole system, and is also a bottleneck for the whole system to transmit broadband high-order modulation signals. The existing power amplifier generally adopts a differential capacitor neutralizing amplifier structure with AB bias. Class AB power amplifiers provide higher efficiency and a 1dB compression point near saturation output power compared to class a power amplifiers; while differential capacitor neutralizing amplifiers provide high gain and good stability at high frequencies (e.g., millimeter wave bands), class AB biased differential capacitor neutralizing amplifiers are widely used to transmit constant envelope signals. However, the differential capacitor neutralization amplifier under class AB bias generates a large amount of second harmonics, which deteriorates the amplitude linearity, phase linearity and third-order intermodulation quality of the power amplifier, and seriously affects the transmission of broadband high-order modulation signals. Therefore, the class AB biased differential capacitor neutralizing amplifier needs to be improved to be suitable for a large-scale phased array system for transmitting broadband high-order modulation signals. According to the invention, a second harmonic short circuit is introduced on the basis of the AB-type bias differential medium capacitor and the amplifier, so that a large amount of second harmonics generated by the AB-type bias low differential capacitor medium amplifier are inhibited, the amplitude linearity and the phase linearity of the power amplifier are improved, the third-order intermodulation is inhibited, and the power amplifier is suitable for transmitting broadband high-order modulation signals.
Disclosure of Invention
The invention aims to provide a broadband high-linearity power amplifier, which can improve the amplitude linearity and the phase linearity of the power amplifier, inhibit the third-order intermodulation quantity, enhance the capability of the power amplifier for transmitting high-power broadband high-order modulation signals, inhibit the influence caused by common-mode interference signals, enhance the reliability of the power amplifier and integrally improve the working capability of the power amplifier at high frequency.
In order to solve the technical problems, the invention adopts a technical scheme that: the broadband high-linearity power amplifier is characterized by comprising an input matching network, a first-stage driving amplifier, a first inter-stage matching network, a second-stage driving amplifier, a second inter-stage matching network, an output-stage power amplifier and an output matching network which are sequentially connected, wherein the first-stage driving amplifier, the second-stage driving amplifier and the output-stage power amplifier respectively comprise a differential capacitor neutralizing amplifier and a second harmonic short circuit, and the differential capacitor neutralizing amplifier and the second harmonic short circuit are symmetrically arranged left and right.
Further, the input matching network, the first inter-stage matching network, the second inter-stage matching network and the output matching network are respectively realized on the basis of an input matching transformer, a first inter-stage matching transformer, a second inter-stage matching transformer and an output matching transformer; the transformers are all integrated transformers on a chip and are realized by overlapping inductive coils formed by different metal layers.
Further, the input matching transformer, the first inter-stage matching transformer and the second inter-stage matching transformer are implemented in the form of a weak coupling transformer, and the output matching transformer is implemented in the form of a strong coupling transformer, wherein: the first inter-stage matching transformer, the second inter-stage matching transformer and the output matching transformer respectively provide direct current power supplies for the first driving stage amplifier, the second driving stage amplifier and the output stage power amplifier.
Further, the first stage driver amplifier, the second stage driver amplifier and the output stage power amplifier have the same structure.
Further, the differential capacitor neutralization amplifier of the first-stage drive amplifier is composed of a first transistor, a second transistor, a first capacitor and a second capacitor, the device sizes of the first transistor and the second transistor are the same, and the first capacitor and the second capacitor are the same; the grid electrode of the first transistor is connected with a first capacitor in series and then connected to the drain electrode of the second transistor, the grid electrode of the second transistor is connected with a second capacitor in series and then connected to the drain electrode of the first transistor, and the grid electrodes and the drain electrodes of the first transistor and the second transistor are respectively connected to the differential signal path; the differential capacitor neutralization amplifier of the second stage drive amplifier comprises third to fourth transistors and fifth to sixth capacitors; the differential capacitor neutralization amplifier of the output stage power amplifier comprises fifth to sixth transistors and ninth to tenth capacitors.
Furthermore, the second harmonic short circuit of the first-stage drive amplifier is composed of a first inductor, a second inductor, a third capacitor and a fourth capacitor, wherein the first inductor is the same as the second inductor, and the third capacitor is the same as the fourth capacitor; one end of a first inductor is connected with the source electrode of the first transistor, the other end of the first inductor is connected with the source electrode of the second transistor after being connected with the second inductor in series, one end of a third capacitor is connected with the drain electrode of the first transistor, the other end of the third capacitor is connected with the drain electrode of the second transistor after being connected with a fourth capacitor in series, and the joint of the third capacitor and the fourth capacitor is connected with the joint of the first inductor and the second inductor; the second harmonic short circuit of the second-stage drive amplifier comprises seventh to eighth capacitors and third to fourth inductors; the second harmonic short circuit of the output stage power amplifier comprises eleventh to twelfth capacitors and fifth to sixth inductors.
Further, the device size of the differential capacitance neutralization amplifier in the first stage driver amplifier, the second stage driver amplifier and the output stage power amplifier is increased in proportion, wherein: the device size ratio of the first to second transistors, the third to fourth transistors, and the fifth to sixth transistors is 2: 3: 4; the capacitance value ratio of the first to second capacitors, the fifth to sixth capacitors and the ninth to tenth capacitors is 2: 3: 4.
further, the sizes of the second harmonic short circuit devices in the first-stage drive amplifier, the second-stage drive amplifier and the output-stage power amplifier are the same, and the inductance values of the first inductor, the second inductor and the sixth inductor are the same; the capacitance values of the third to fourth capacitors, the seventh to eighth capacitors and the eleventh to twelfth capacitors are the same.
Further, the input matching transformer forms an input matching network, the first inter-stage matching transformer and the third to fourth capacitors form a first inter-stage matching network, the second inter-stage matching transformer and the seventh to eighth capacitors form a second inter-stage matching network, and the output matching transformer and the eleventh to twelfth capacitors form an output inter-stage matching network.
The invention has the beneficial effects that: the broadband high-linearity power amplifier has the following advantages:
firstly, the invention provides a differential capacitor neutralizing amplifier structure with a second harmonic short circuit, on one hand, the amplitude linearity and the phase linearity of a power amplifier are improved, the third-order intermodulation quantity is inhibited, the capability of the power amplifier for transmitting high-power broadband high-order modulation signals is enhanced, on the other hand, the influence caused by common-mode interference signals is inhibited, the reliability of the power amplifier is enhanced, and the working capability of the power amplifier at high frequency is integrally improved;
secondly, the influence of the second harmonic on the modulation signal is inhibited by combining the differential capacitor neutralizing amplifier and the second harmonic short circuit, so that the amplitude linearity and the phase linearity of the power amplifier at high frequency are improved;
and thirdly, the capacitor in the second harmonic short circuit is absorbed in the matching network, and the influence of the second harmonic short circuit on fundamental wave signals is eliminated on the premise of not influencing the amplitude linearity and the phase linearity of the power amplifier at high frequency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1A is a schematic circuit diagram of a wideband high linearity power amplifier of the present invention;
FIG. 1B is a schematic circuit diagram of the first stage driver amplifier in the common mode;
FIG. 1C is a schematic diagram of the circuit configuration of the first stage driver amplifier of the present invention in differential mode;
FIG. 2 is a result of the gain and input-output reflection coefficient of a broadband high linearity power amplifier of the present invention;
FIG. 3 is the result of outputting a 1dB compression point and outputting a 3dB compression point for a wideband high linearity power amplifier of the present invention;
FIG. 4 is a result of the amplitude linearity of a wideband high linearity power amplifier of the present invention;
FIG. 5 is a result of the phase linearity of a wideband high linearity power amplifier of the present invention;
fig. 6 is the result of third order intermodulation (IMD3) of a broadband high linearity power amplifier of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
Also, in the description of the present invention, the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1 to 6, an embodiment of the present invention includes: as shown in fig. 1, the present invention provides a broadband high linearity power amplifier, which includes an input matching transformer 400, a first stage driving amplifier 100, a first inter-stage matching transformer 401, a second stage driving amplifier 200, a second inter-stage matching transformer 402, an output stage power amplifier 300, and an output matching transformer 403, which are connected in sequence, wherein each stage of amplifier adopts a differential capacitor neutralization structure and is provided with a second harmonic short circuit. Compared with the existing power amplifier based on the differential capacitor neutralizing amplifier, the broadband high-linearity power amplifier provided by the invention improves the amplitude linearity and the phase linearity, inhibits the third-order intermodulation quantity, and enhances the performance of the power amplifier for transmitting broadband high-order modulation signals.
Based on the structure of a differential capacitor neutralization amplifier, the invention provides a structure suitable for improving the amplitude linearity and the phase linearity of a differential power amplifier and simultaneously inhibiting the third-order intermodulation quantity, fig. 1A is a schematic circuit structure diagram of a broadband high-linearity power amplifier, fig. 1B is a schematic circuit structure diagram of a first-stage drive amplifier in fig. 1A in a common-mode signal mode, and fig. 1C is a schematic circuit structure diagram of the first-stage drive amplifier in fig. 1A in a differential-mode signal mode. Specifically, the method comprises the following steps:
the first stage driver amplifier 100, the second stage driver amplifier 200, and the output stage driver amplifier 300 have the same structure. Taking the first stage driver amplifier 100 as an example, the structure is composed of a differential capacitance neutralization amplifier and a second harmonic short circuit. The differential capacitor neutralization amplifier is composed of a transistor 101, a transistor 102, a capacitor 103 and a capacitor 104, the device size of the transistor 101 is the same as that of the transistor 102, and the capacitor 103 is the same as that of the second capacitor 104. When the power amplifier operates, the capacitor 103 and the capacitor 104 can improve the gain and stability of the power amplifier. The second harmonic short circuit is composed of an inductor 105, an inductor 106, a capacitor 107 and a capacitor 108, wherein the inductor 105 is the same as the inductor 106, and the capacitor 107 is the same as the fourth capacitor 108. When the power amplifier is in operation, the circuit structure is shown in fig. 1B for common mode signals and even harmonics; the transistor 101 is connected with the transistor 102 in parallel, a grid electrode, a source electrode and a drain electrode are sequentially connected with each other, and two ends of the capacitor 103 are respectively connected with the grid electrode and the drain electrode of the transistor 101 and the drain electrode of the transistor 102 after the capacitor 103 is connected with the capacitor 104 in parallel; the inductor 105, the inductor 106, the capacitor 107 and the capacitor 108 form a series resonant circuit which resonates at the second harmonic frequency, so that the second harmonic load of the power amplifier is close to a short circuit, the second harmonic is restrained, and the amplitude linearity, the phase linearity and the third-order intermodulation quantity of the power amplifier are improved; for the differential mode fundamental wave signal and the odd harmonics, the circuit structure is as shown in fig. 1C; the transistor 101, the transistor 102, the capacitor 103 and the capacitor 104 form a differential capacitor neutralization amplifier; the inductance 105 and the inductance 106 are virtually shorted to the ground without affecting the differential mode fundamental wave signal and odd harmonics, and the capacitor 107 and the capacitor 108 are connected in series and then connected in parallel to the drains of the transistor 101 and the transistor 102 to be absorbed in the matching network. The second stage driver amplifier 200, the output stage driver amplifier 300 and the first stage driver amplifier differ only in the specific values of transistor size and capacitance, and the device size ratio of the transistor 101, the transistor 201 and the transistor 301 is 2: 3: 4; the sizes of the transistors 101 and 102, the transistors 201 and 202, and the transistors 301 and 302 are the same, respectively; the capacitance value ratio of the capacitor 103, the capacitor 203 and the capacitor 303 is 2: 3: 4; the capacitance values of the capacitors 103 and 104, the capacitors 203 and 204, and the capacitors 303 and 304 are the same, respectively.
The input matching transformer 400, the first inter-stage matching transformer 401, and the second inter-stage matching transformer 402 are implemented in the form of weak coupling transformers, and the output matching transformer 403 is implemented in the form of strong coupling transformers. First inter-stage matching transformer 401, second inter-stage matching transformer 402, and output matching transformer 403 respectively provide dc power to first driver stage amplifier 100, second driver stage amplifier 200, and output stage power amplifier 300. Meanwhile, the input matching transformer 400 forms an input matching network, the first inter-stage matching transformer 401, the capacitor 107 and the capacitor 108 form a first inter-stage matching network, the second inter-stage matching transformer 402, the capacitor 207 and the capacitor 208 form a second inter-stage matching network, and the output matching transformer 403, the capacitor 307 and the capacitor 308 form an output inter-stage matching network.
Fig. 2 is a result of the gain and input-output reflection coefficient of a broadband high linearity power amplifier. In the frequency range of 21-28 GHz, the power amplifiers can achieve the maximum small signal gain of 22.5dB, and the in-band gain jitter is less than 1dB, which means that the invention achieves the broadband and flat signal amplification function. Meanwhile, the power amplifier realizes good matching, and the input reflection coefficient is less than-10 dB and the output reflection coefficient is less than-5 dB at 24-28 GHz.
Fig. 3 is the result of the output 1dB compression point and the output 3dB compression point of a wideband high linearity power amplifier. In the frequency range of 24-27 GHz, the output 1dB compression point of the power amplifier is larger than 15dBm, and the output 3dB compression point of the power amplifier is larger than 15.5dBm, which means that the invention realizes broadband high-power output.
Fig. 4 is a result of amplitude linearity of a broadband high linearity power amplifier. The gain upwarp is less than 1dB before the 1dB compression point is reached, meaning that the invention achieves better amplitude linearity.
Fig. 5 is a result of phase linearity of a broadband high linearity power amplifier. The phase shift is less than 6 deg. before the 1dB compression point is reached, meaning that the invention achieves better phase linearity.
Fig. 6 is the result of third order intermodulation (IMD3) for a broadband high linearity power amplifier. In a wide output power range, a third-order intermodulation below-30 dBc is realized at the upper and lower sidebands simultaneously.
The broadband high-linearity power amplifier has the following advantages:
firstly, the invention provides a differential capacitor neutralizing amplifier structure with a second harmonic short circuit, on one hand, the amplitude linearity and the phase linearity of a power amplifier are improved, the third-order intermodulation quantity is inhibited, the capability of the power amplifier for transmitting high-power broadband high-order modulation signals is enhanced, on the other hand, the influence caused by common-mode interference signals is inhibited, the reliability of the power amplifier is enhanced, and the working capability of the power amplifier at high frequency is integrally improved;
secondly, the influence of the second harmonic on the modulation signal is inhibited by combining the differential capacitor neutralizing amplifier and the second harmonic short circuit, so that the amplitude linearity and the phase linearity of the power amplifier at high frequency are improved;
and thirdly, the capacitor in the second harmonic short circuit is absorbed in the matching network, and the influence of the second harmonic short circuit on fundamental wave signals is eliminated on the premise of not influencing the amplitude linearity and the phase linearity of the power amplifier at high frequency.
Furthermore, it should be noted that in the present specification, "include" or any other variation thereof is intended to cover a non-exclusive inclusion, so that a process, a method, an article or an apparatus including a series of elements includes not only those elements but also other elements not explicitly listed, or further includes elements inherent to such process, method, article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should take the description as a whole, and the technical solutions in the embodiments may be appropriately combined to form other embodiments understood by those skilled in the art.
Claims (9)
1. The broadband high-linearity power amplifier is characterized by comprising an input matching network, a first-stage driving amplifier (100), a first-stage matching network, a second-stage driving amplifier (200), a second-stage matching network, an output-stage power amplifier (300) and an output matching network which are sequentially connected, wherein the first-stage driving amplifier (100), the second-stage driving amplifier (200) and the output-stage power amplifier (300) respectively comprise differential capacitance neutralizing amplifiers (110, 210 and 310) and second-harmonic short circuits (120, 220 and 320) which are arranged in bilateral symmetry.
2. A wideband high linearity power amplifier according to claim 1, characterized in that: the input matching network, the first inter-stage matching network, the second inter-stage matching network and the output matching network are respectively realized on the basis of an input matching transformer (400), a first inter-stage matching transformer (401), a second inter-stage matching transformer (402) and an output matching transformer (403); the transformers (400, 401, 402, 403) are all integrated transformers on chip, and are realized by overlapping inductive coils formed by different metal layers.
3. A wideband high linearity power amplifier according to claim 3, characterized in that: the input matching transformer (400), the first inter-stage matching transformer (401) and the second inter-stage matching transformer (402) are implemented in the form of a weakly coupled transformer, and the output matching transformer (403) is implemented in the form of a strongly coupled transformer, wherein: the first inter-stage matching transformer (401), the second inter-stage matching transformer (402) and the output matching transformer (403) respectively provide direct current power for the first drive stage amplifier (100), the second drive stage amplifier (200) and the output stage power amplifier (300).
4. A wideband high linearity power amplifier according to claim 1, characterized in that: the first-stage driver amplifier (100), the second-stage driver amplifier (200) and the output-stage power amplifier (300) have the same structure.
5. A wideband high linearity power amplifier according to claim 4, characterized in that: the differential capacitance neutralization amplifier (110) of the first-stage drive amplifier (100) is composed of a first transistor (101), a second transistor (102), a first capacitor (103) and a second capacitor (104), the device sizes of the first transistor (101) and the second transistor (102) are the same, and the first capacitor (103) and the second capacitor (104) are the same; the grid electrode of the first transistor is connected with a first capacitor (103) in series and then connected to the drain electrode of a second transistor (102), the grid electrode of the second transistor is connected with a second capacitor (104) in series and then connected to the drain electrode of the first transistor (101), and the grid electrodes and the drain electrodes of the first transistor (101) and the second transistor (102) are respectively connected to a differential signal path; the differential capacitance neutralization amplifier (210) of the second stage drive amplifier (200) comprises third to fourth transistors (201, 202) and fifth to sixth capacitors (203, 204); the differential capacitance neutralization amplifier (310) of the output stage power amplifier (300) comprises fifth to sixth transistors (301, 302) and ninth to tenth capacitors (303, 304).
6. A wideband high linearity power amplifier according to claim 4, characterized in that: the second harmonic short circuit (120) of the first-stage drive amplifier (100) is composed of a first inductor (105), a second inductor (106), a third capacitor (107) and a fourth capacitor (108), wherein the first inductor (105) is the same as the second inductor (106), and the third capacitor (107) is the same as the fourth capacitor (108); one end of a first inductor (105) is connected with the source electrode of the first transistor (101), the other end of the first inductor is connected with the source electrode of the second transistor (102) after being connected with a second inductor (106) in series, one end of a third capacitor (107) is connected with the drain electrode of the first transistor (101), the other end of the third capacitor is connected with the drain electrode of the second transistor (102) after being connected with a fourth capacitor (108) in series, and the joint of the third capacitor (107) and the fourth capacitor (108) is connected with the joint of the first inductor (105) and the second inductor (106); a second harmonic short circuit (220) of the second stage driver amplifier (200) comprises seventh to eighth capacitors (207, 208) and third to fourth inductors (205, 206); the second harmonic short circuit (320) of the output stage power amplifier (300) includes eleventh to twelfth capacitors (307, 308) and fifth to sixth inductors (305, 306).
7. A wideband high linearity power amplifier according to claim 4, characterized in that: the device size of the differential capacitance neutralization amplifier (110, 210, 310) in the first stage driver amplifier (100), the second stage driver amplifier (200) and the output stage power amplifier (300) is increased proportionally, wherein: the device size ratio of the first to second transistors (101, 102), the third to fourth transistors (201, 202), and the fifth to sixth transistors (301, 302) is 2: 3: 4; the capacitance value ratio of the first to second capacitors (103, 104), the fifth to sixth capacitors (203, 204) and the ninth to tenth capacitors (303, 304) is 2: 3: 4.
8. a wideband high linearity power amplifier according to claim 4, characterized in that: the device sizes of second harmonic short-circuit circuits (120, 220, 320) in the first-stage driver amplifier (100), the second-stage driver amplifier (200) and the output-stage power amplifier (300) are the same, and the inductance values of the first-sixth inductors (105, 106, 205, 206, 305, 306) are the same; the capacitance values of the third to fourth capacitors (107, 108), the seventh to eighth capacitors (207, 208) and the eleventh to twelfth capacitors (307, 308) are the same.
9. A wideband high linearity power amplifier according to claim 3, characterized in that: the input matching transformer (400) forms an input matching network, the first inter-stage matching transformer (401) and the third to fourth capacitors (107 and 108) form a first inter-stage matching network, the second inter-stage matching transformer (402) and the seventh to eighth capacitors (207 and 208) form a second inter-stage matching network, and the output matching transformer (403) and the eleventh to twelfth capacitors (307 and 308) form an output inter-stage matching network.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010721281.5A CN111934629B (en) | 2020-07-24 | 2020-07-24 | Broadband high-linearity power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010721281.5A CN111934629B (en) | 2020-07-24 | 2020-07-24 | Broadband high-linearity power amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111934629A true CN111934629A (en) | 2020-11-13 |
| CN111934629B CN111934629B (en) | 2021-06-11 |
Family
ID=73315147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010721281.5A Active CN111934629B (en) | 2020-07-24 | 2020-07-24 | Broadband high-linearity power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111934629B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023040238A1 (en) * | 2021-09-16 | 2023-03-23 | 深圳飞骧科技股份有限公司 | Differential power amplifier |
| WO2023045543A1 (en) * | 2021-09-27 | 2023-03-30 | 深圳飞骧科技股份有限公司 | Three-stage power amplifier based on transformer matching, and radio frequency front-end architecture |
| US11750230B1 (en) | 2022-04-21 | 2023-09-05 | Deco Semiconductor (Shenzhen) Co., Limited | Differential millimeter wave communication architecture and electronic device |
| WO2023201831A1 (en) * | 2022-04-21 | 2023-10-26 | 德氪微电子(深圳)有限公司 | Differential millimeter wave communication architecture and electronic device |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656514A (en) * | 2009-09-07 | 2010-02-24 | 东南大学 | Gain controllable parallel radio-frequency power amplifier based on matching share |
| CN202663389U (en) * | 2012-06-11 | 2013-01-09 | 天津里外科技有限公司 | Multi-standard fully-compatible fourth-generation mobile radio-frequency front-end broadband low-noise amplification device and application system thereof |
| CN102946230A (en) * | 2012-10-31 | 2013-02-27 | 中国科学技术大学 | Ultra-wide band low-noise single-ended input and differential output amplifier |
| EP2854288A2 (en) * | 2011-08-03 | 2015-04-01 | Ericsson Modems SA | A high efficiency power amplifier |
| CN104753476A (en) * | 2013-12-30 | 2015-07-01 | 国民技术股份有限公司 | Multimode multi-frequency power amplifier |
| US9219596B2 (en) * | 2010-06-03 | 2015-12-22 | Broadcom Corporation | Front end module with active tuning of a balancing network |
| CN105515541A (en) * | 2016-01-26 | 2016-04-20 | 广东工业大学 | Radio frequency power amplifier in two-stage stack structure |
| US9515560B1 (en) * | 2014-08-08 | 2016-12-06 | Flextronics Ap, Llc | Current controlled resonant tank circuit |
| CN107681986A (en) * | 2017-10-09 | 2018-02-09 | 东南大学 | Suitable for the neutralization bootstrapping common source and common grid amplifier of millimeter wave power amplification application |
| US20180091104A1 (en) * | 2013-04-24 | 2018-03-29 | Maxlinear, Inc. | Method And System For A Pseudo-Differential Low-Noise Amplifier At Ku-Band |
| CN109728785A (en) * | 2016-03-11 | 2019-05-07 | 英特尔公司 | The ultra-compact multifrequency tape sender from suppression technology is distorted using strong AM-PM |
| CN109787569A (en) * | 2017-11-14 | 2019-05-21 | 锐迪科微电子科技（上海）有限公司 | A kind of multimode multi-frequency radio frequency power amplifier |
| WO2019152326A1 (en) * | 2018-02-02 | 2019-08-08 | Psemi Corporation | Drain sharing split lna |
| CN110729974A (en) * | 2019-09-30 | 2020-01-24 | 西安电子科技大学 | Ultra-wideband high-gain low-noise amplifier |
| CN210958284U (en) * | 2019-12-30 | 2020-07-07 | 深圳开阳电子股份有限公司 | Millimeter wave receiving low-noise amplifier and millimeter wave receiver |
-
2020
- 2020-07-24 CN CN202010721281.5A patent/CN111934629B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656514A (en) * | 2009-09-07 | 2010-02-24 | 东南大学 | Gain controllable parallel radio-frequency power amplifier based on matching share |
| US9219596B2 (en) * | 2010-06-03 | 2015-12-22 | Broadcom Corporation | Front end module with active tuning of a balancing network |
| EP2854288A2 (en) * | 2011-08-03 | 2015-04-01 | Ericsson Modems SA | A high efficiency power amplifier |
| CN202663389U (en) * | 2012-06-11 | 2013-01-09 | 天津里外科技有限公司 | Multi-standard fully-compatible fourth-generation mobile radio-frequency front-end broadband low-noise amplification device and application system thereof |
| CN102946230A (en) * | 2012-10-31 | 2013-02-27 | 中国科学技术大学 | Ultra-wide band low-noise single-ended input and differential output amplifier |
| US20180091104A1 (en) * | 2013-04-24 | 2018-03-29 | Maxlinear, Inc. | Method And System For A Pseudo-Differential Low-Noise Amplifier At Ku-Band |
| CN104753476A (en) * | 2013-12-30 | 2015-07-01 | 国民技术股份有限公司 | Multimode multi-frequency power amplifier |
| US9515560B1 (en) * | 2014-08-08 | 2016-12-06 | Flextronics Ap, Llc | Current controlled resonant tank circuit |
| CN105515541A (en) * | 2016-01-26 | 2016-04-20 | 广东工业大学 | Radio frequency power amplifier in two-stage stack structure |
| CN109728785A (en) * | 2016-03-11 | 2019-05-07 | 英特尔公司 | The ultra-compact multifrequency tape sender from suppression technology is distorted using strong AM-PM |
| CN107681986A (en) * | 2017-10-09 | 2018-02-09 | 东南大学 | Suitable for the neutralization bootstrapping common source and common grid amplifier of millimeter wave power amplification application |
| CN109787569A (en) * | 2017-11-14 | 2019-05-21 | 锐迪科微电子科技（上海）有限公司 | A kind of multimode multi-frequency radio frequency power amplifier |
| WO2019152326A1 (en) * | 2018-02-02 | 2019-08-08 | Psemi Corporation | Drain sharing split lna |
| CN110729974A (en) * | 2019-09-30 | 2020-01-24 | 西安电子科技大学 | Ultra-wideband high-gain low-noise amplifier |
| CN210958284U (en) * | 2019-12-30 | 2020-07-07 | 深圳开阳电子股份有限公司 | Millimeter wave receiving low-noise amplifier and millimeter wave receiver |
Non-Patent Citations (2)
| Title |
|---|
| HWISEOB LEE: "2.65 GHz 340 W dual internally matched FETs for compact doherty power amplifiers", 《2018 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR)》 * |
| 陈金虎: "宽带高效率连续型功率放大器的研究", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023040238A1 (en) * | 2021-09-16 | 2023-03-23 | 深圳飞骧科技股份有限公司 | Differential power amplifier |
| US11848650B2 (en) | 2021-09-16 | 2023-12-19 | Lansus Technologies Inc. | Differential power amplifier |
| WO2023045543A1 (en) * | 2021-09-27 | 2023-03-30 | 深圳飞骧科技股份有限公司 | Three-stage power amplifier based on transformer matching, and radio frequency front-end architecture |
| US11750230B1 (en) | 2022-04-21 | 2023-09-05 | Deco Semiconductor (Shenzhen) Co., Limited | Differential millimeter wave communication architecture and electronic device |
| WO2023201831A1 (en) * | 2022-04-21 | 2023-10-26 | 德氪微电子(深圳)有限公司 | Differential millimeter wave communication architecture and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111934629B (en) | 2021-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111934629B (en) | Broadband high-linearity power amplifier | |
| CN100542011C (en) | Integrated doherty type amplifier installation with high effect | |
| US8487703B2 (en) | Radiofrequency amplifier | |
| CN106411268B (en) | Power amplifier of distributed two-stack structure considering Miller effect | |
| US20050231286A1 (en) | Power amplifier | |
| EP2814113A1 (en) | Marchand balun and power amplifier using the same | |
| US11533028B2 (en) | Radio frequency power amplifier with harmonic control circuit as well as method for manufacturing the same | |
| CN216390930U (en) | Radio frequency power amplifier, chip and electronic equipment | |
| CN216390932U (en) | MMIC radio frequency power amplifier | |
| Babaie et al. | A wideband 60 GHz class-E/F 2 power amplifier in 40nm CMOS | |
| WO2020219534A1 (en) | Power amplifiers and transmission systems and methods of broadband and efficient operations | |
| CN109274342A (en) | Power synthesis amplifier suitable for millimeter-wave communication system power application | |
| CN111884606A (en) | Broadband matching circuit and millimeter wave power amplification circuit based on millimeter wave transformer | |
| CN110808716A (en) | Doherty radio frequency power amplifier and output matching network structure thereof | |
| EP2393112B1 (en) | Inductive circuit arrangement | |
| Zhu et al. | A 1V 32.1 dBm 92-to-102GHz power amplifier with a scalable 128-to-1 power combiner achieving 15% peak PAE in a 65nm bulk CMOS process | |
| CN110086439A (en) | It is applicable in the F class out-phase power amplification circuit and RF power combiner of 5G network | |
| CN114978045A (en) | Dual-frequency Doherty power amplifier and radio frequency discrete device | |
| Yang et al. | A Ku-band CMOS Balanced Driver Amplifier with Transformer-based Notch Filter for SATCOM Phased Arrays | |
| CN113067554A (en) | Ka frequency band low noise amplifier realized based on CMOS | |
| Hu et al. | A 30 MHz–3 GHz watt-level stacked-FET linear power amplifier | |
| US11973474B2 (en) | Power amplifiers and transmission systems and methods of broadband and efficient operations | |
| Itoh et al. | A 4 to 25 GHz 0.5 W monolithic lossy match amplifier | |
| CN220732735U (en) | Power amplification module, antenna unit and phased array system | |
| CN115955202A (en) | Cascode power amplifier, transmitter and communication equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |