CN202663389U - Multi-standard fully-compatible fourth-generation mobile radio-frequency front-end broadband low-noise amplification device and application system thereof - Google Patents

Abstract

The utility model discloses a multi-standard fully-compatible fourth-generation mobile radio-frequency front-end broadband low-noise amplification device. The device comprises a single-ended input differential output noise cancellation type low-noise amplifier, a tracking filter quality factor enhancement circuit and a class AB module, wherein the single-ended input differential output noise cancellation type low-noise amplifier is used for enabling noises to cancel and signals to complement and add together by using the phase contrary of the signals and noises; the tracking filter quality factor enhancement circuit is used for increasing the quality factor of an output cavity through adjusting negative transconductance so as to obtain the best out-of-band interference filtering effect; and the class AB module is used for enabling a current mode amplifier to be unsaturated so as to respond to stronger out-of-band interference. According to the device disclosed by the utility model, the single-ended input is adopted, a single inductor is utilized, and the noise performance is met; meanwhile, the amplification device can filter out out-of-band large signals and cover the broad bands of TD-LTE (Time Division Long Term Evolution), TD-SCDMA (Time Division-Synchronous Code Division Multiple Access) and a quad-band GSM (Global System for Mobile Communication); and the device has the advantages of low cost, more applicable standards, high data rate, high sensitivity, low noise and little space occupation.

Description

Multi-standard full-compatible four-generation mobile radio frequency front-end broadband low-noise amplification device and application system thereof

Technical Field

The utility model relates to a fourth generation mobile communication field specifically relates to multistandard full compatible fourth generation mobile radio frequency front end broadband low noise amplification device and application system thereof.

Background

With the rapid development of mobile communication technology, in order to cover all frequency bands of Time Division Long Term Evolution (TD-LTE for short), the fourth generation commonly developed by alcatel-lucent, nokia siemens communication, down telecommunications, hua-shi technology, zhongxing communication, chinese mobile and other enterprises, i.e. 4G mobile communication technology and standard), Time Division Synchronous Code Division Multiple Access (TD-SCDMA for short), the third generation mobile communication standard proposed in china, 3G for short, one of three ITU-approved 3G standards, international standards for wireless communication which are widely accepted and recognized internationally and mainly based on the intellectual property of China, and Quad-frequency GSM (Quad-GSM), in the conventional power amplifier as shown in fig. 2, a Receiver (Receiver) front end must use a surface acoustic wave filter (SAW filter) to reduce mutual interference between frequency bands.

For example, a 34 wave Band (Band 34: 2010-2025 MHz (TD-SCDMA)), a 38 wave Band (Band 38: 2570-2620 MHz (TD-LTE)), a 39 wave Band (Band 39F: 1880-1900 MHz (TD-LTE)), a Band 39S: 1900-1920 MHz (TD-SCDMA) and a 40 wave Band (Band 40: 2300-2400 MHz (TD-SCDMA)), and four wave bands need four sound surface filters; the LTE receiver requires diversity (diversity) to improve data rate and sensitivity, so three more surface acoustic filters feed three LTE bands, namely 38 band, 39 band and 40 band.

The TD-LTE/TD-SCDMA/2G compatible mobile phone shown in fig. 1 includes a power management unit, a memory, a baseband processor, an application processor, a 2G/3G/4G radio frequency transceiver module and a power amplifier respectively connected to the power management unit, a subscriber identity module (SIM card) connected to the baseband processor, an antenna connected to the power amplifier, a navigation module, a camera module, a bluetooth module and a wireless internet module respectively connected to the application processor; the application processor and the baseband processor are respectively connected with the memory.

In order to be compatible with 2-generation handsets (see fig. 1), 2 bands supporting the PCS standard, 3 bands supporting the DCS standard, 5 bands supporting the EGSM standard, and 8 bands supporting the GSM standard are required; the receiver requires 11 saw filters for a total of 11 receive inputs.

In addition, in the conventional low noise amplifier shown in fig. 7, two inductors Lg and Ls are used for input impedance matching, the current steering of an output stage grid ground (Cascode) device M3-M6 realizes gain control of a current domain, and an output end inductor Ld is used for completing output impedance matching; to suppress common mode noise and interference and to interface with the mixer, two input ports for differential inputs INP and INN are used.

In the traditional low noise amplifier, the number of input pins is multiplied by differential input, and the multi-standard and multi-band design is a pin-limited design; the three inductors of Lg, Ls and Ld make the chip area occupied by the module quite large; the two inductors of Lg and Ls are adopted to complete input matching, and the output inductor is added, so that the system becomes a narrow-band receiver and cannot meet the requirements of a multi-band system of 869-2620 MHz. In addition, the amplifier must be used in conjunction with an off-chip saw filter, otherwise large out-of-band signals will saturate it, reducing the acceptance sensitivity of the system.

In the process of implementing the present invention, the inventor finds that there are at least the defects of high cost, few applicable standards, low data rate, low sensitivity, large noise, large occupied space, etc. in the prior art.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to the above-mentioned problem, provide the full compatible four generations of mobile radio frequency front end broadband low noise amplification device of multistandard to realize with low costs, be suitable for the advantage that the standard is many, the data rate is high, sensitivity is high, small in noise and occupation space are little.

Another object of the present invention is to provide an application system based on the above multi-standard fully compatible four-generation mobile rf front end wideband low noise amplifier, that is, at least includes a multi-standard fully compatible four-generation mobile rf front end transceiver system.

In order to achieve the above object, the utility model adopts the following technical scheme: the multi-standard full-compatible four-generation mobile radio frequency front-end broadband low-noise amplification device comprises a single-ended input differential output noise cancellation type low-noise amplifier, a tracking filter quality factor enhancement circuit and an AB type module, wherein the tracking filter quality factor enhancement circuit and the AB type module are respectively connected with the single-ended input differential output noise cancellation type low-noise amplifier in a matched mode; wherein:

the single-ended input differential output noise cancellation type low noise amplifier is used for cancelling noise by using two opposite phases of a signal and noise so as to complementarily add the signals;

the tracking filter quality factor enhancement circuit is used for improving the quality factor of the output cavity by adjusting the negative transconductance to obtain the optimal out-of-band interference filtering effect;

and the AB module is used for enabling the current mode amplifier to be unsaturated so as to deal with stronger out-of-band interference.

Further, the single-ended input differential output noise cancellation type low noise amplifier at least comprises a variable gain low noise amplifier LNA/VGA;

and the tracking filter is matched with the tracking filter quality factor enhancement circuit and is also provided.

Furthermore, a noise cancellation type class A amplifying unit (Main) is arranged in the variable gain low noise amplifier LNA/VGA;

the noise phases of the output end OUTP and the output end OUTn of the noise cancellation type class A amplifying unit are the same and cancel each other, and the noise cancellation formula of the LNA is as follows:

；

wherein,

and

for the transconductance values of input devices M1 and M2,

and

for inductors L1 and L2 at the operating frequency

The effective impedance of (a); the noise figure of the low noise amplifier can be expressed as:

；

wherein,

for thermal noise figure of device channel, for reducing

Influence on NF, design

>

At the same time>

。

Furthermore, a class A amplifying unit (Main) with single-ended input and differential output is arranged in the variable gain low noise amplifier LNA/VGA; the class A amplifying unit has the advantages that the phase of the signal of the main channel through M1 and the phase of the auxiliary signal through M2 at the output ends OUTp and OUTn are opposite, and complementary enhancement is realized; and/or the presence of a gas in the gas,

a class AB mode amplification unit connected with the class A amplification unit is further arranged inside the variable gain low noise amplifier LNA/VGA, and the class AB amplification unit and the class A amplification unit are sequentially connected with the tracking filter in a matched manner; the class AB amplifying unit is matched with the peak detector for use and coping with out-of-band interference, and when the peak detector senses out-of-band large signals, the current mode AB amplifier is turned on so that the amplifier is not saturated; and/or the presence of a gas in the gas,

a Gain control unit (VGA for short) is arranged in the variable Gain low noise Amplifier LNA/VGA; the VGA, by receiving the signals GC and GCB from the baseband processor BBIC, controls the switching on and off of the cascaded devices M3, M4, M5 and M6 of the low noise amplifier to accomplish the gain control.

Furthermore, an on-chip Q value correction unit is arranged in the tracking filter;

the on-chip Q value correction unit comprises an LNA, a filtering module, a local oscillator generator, a comparator and a digital correction central controller; wherein:

when in the correcting state, the output end of the LNA is respectively connected with the input end of the filtering module and the first input end of the comparator; the output end of the local oscillator generator is connected with the second input end of the comparator, the output end of the comparator is connected with the input end of the digital correction central controller, and the output end of the digital correction central controller is connected with the control end of the filtering module.

Furthermore, a Q enhancement quantity adjusting unit which is matched and connected with the in-chip Q value correcting unit is also arranged in the tracking filter;

the Q enhancement amount adjusting unit includes a word programming control unit

A module; pass through-

The module sets different auxiliary materials according to different frequency ranges

Value, make Q enhance by an amount

The regulation formula of (2) is:

；

wherein,

effective impedance of output cavity for transconductance value of input device Mn

，

Is the effective value of the Q, and the Q is the effective value,

，

in order to be able to adjust the frequency,

is the parasitic resistance of the inductor, and n is a natural number.

And simultaneously, the utility model discloses an another technical scheme be: the application system based on the multi-standard fully compatible four-generation mobile radio frequency front end broadband low noise amplification device at least comprises a radio frequency front end receiving and transmitting system of a multi-standard fully compatible mobile user terminal chip; the radio frequency front end receiving and transmitting system of the multi-standard full-compatible mobile user terminal chip comprises:

the LTE diversity receiver based on the multi-standard fully-compatible fourth-generation mobile radio frequency front-end broadband low-noise amplification device is configured to perform front-end processing on radio frequency signals of a preset frequency spectrum (for example, the single-ended receiving frequency from an antenna is 869-2620 MHz), the front-end processing including at least any one of tracking filtering, frequency mixing, variable gain intermediate frequency and/or low noise amplification, power detection and AD conversion, and then send the obtained front-end processing result to a single frequency synthesizer;

the single frequency synthesizer is used for performing any frequency synthesis processing at least comprising multiple analog-to-digital frequency division, phase discrimination, oscillation, low-pass filtering and modulation operation based on a front-end processing result sent by the LTE diversified receiver, and sending an obtained frequency synthesis result to the transmitter;

the transmitter is configured to perform any frequency conversion processing at least including radio frequency DA conversion, signal attenuation, and frequency conversion operations based on the frequency synthesis result sent by the single frequency synthesizer, and output the frequency conversion results obtained by the frequency conversion processing (e.g., the high-frequency signal with the frequency of 2300-2620MHz, the intermediate-frequency signal with the frequency of 1880-2025MHz, and the low-frequency signal with the frequency of 824-915 MHz) from the high-frequency output terminal, the intermediate-frequency output terminal, and the low-frequency output terminal through three terminals, respectively.

Further, the LTE diversity receiver includes two signal processing channels disposed in parallel, and a Power Detector (Power Detector) disposed between the two signal processing channels in a matching manner;

each signal processing channel comprises a variable gain Low Noise Amplifier (LNA)/VGA, a mixer, a Programmable Gain Amplifier (PGA)/Low Pass Filter (LPF) and two analog-to-digital converters (ADC) which are arranged in parallel and are sequentially in signal connection, and a Tracking Filter (Tracking Filter) which is at least of Q enhancement type and/or Q adjustable type and is in signal connection with the output end of the LNA/VGA;

the first output ends of the two ADCs are respectively used as a diversified orthogonal I output end RXI _ diversity and a diversified orthogonal Q output end RXQ _ diversity of the LTE diversified receiver, or used as an orthogonal I output end RXI and a receiver orthogonal Q output end RXQ of the LTE receiver; second output ends of the two ADCs are connected, and the two ADCs are used for receiving signals from the frequency synthesizer as sampling frequencies;

the power detector is connected between the LNA/VGA output ends in the two signal processing channels; and the output end of the power detector is used for outputting a power detection result.

Furthermore, an on-chip Q value correction unit is arranged in the tracking filter;

the on-chip Q value correction unit comprises an LNA (low-noise amplifier), a filtering module, a Local oscillator generator (Local oscillator), a comparator and a Digital correction central controller (Digital Calibration Engine); wherein:

when in the correcting state, the output end of the LNA is respectively connected with the input end of the filtering module and the first input end of the comparator; the output end of the local oscillator generator is connected with the second input end of the comparator, the output end of the comparator is connected with the input end of the digital correction central controller, and the output end of the digital correction central controller is connected with the control end of the filtering module; and the number of the first and second groups,

a Q enhancement quantity adjusting unit which is matched and connected with the in-chip Q value correcting unit is also arranged in the tracking filter;

the Q enhancement amount adjusting unit includes a word programming control unit

A module; pass through-

The module sets different auxiliary materials according to different frequency ranges

Value, make Q enhance by an amount

The regulation formula of (2) is:

；

wherein,

effective impedance of output cavity for transconductance value of input device Mn

，

Is the effective value of the Q, and the Q is the effective value,

，in order to be able to adjust the frequency,

is the parasitic resistance of the inductor, and n is a natural number.

Furthermore, a noise cancellation type class A amplifying unit (Main) is arranged in the variable gain low noise amplifier LNA/VGA;

the noise phases of the output end OUTP and the output end OUTn of the noise cancellation type class A amplifying unit are the same and cancel each other, and the noise cancellation formula of the LNA is as follows:

；

wherein,

and

for the transconductance values of input devices M1 and M2,

and

for inductors L1 and L2 at the operating frequencyThe effective impedance of (a); the noise figure of the low noise amplifier can be expressed as:

；

wherein,

for thermal noise figure of device channel, for reducing

Influence on NF, design

>

At the same time

>(ii) a Or,

a class A amplifying unit (Main) with single-ended input and differential output is arranged in the variable gain low noise amplifier LNA/VGA;

the signal via the M1 primary channel and the auxiliary signal via M2 are in opposite phase at output OUTp and output OUTn, with complementary enhancement; and/or the presence of a gas in the gas,

a class AB mode amplification unit connected with the class A amplification unit is further arranged inside the variable gain low noise amplifier LNA/VGA, and the class AB amplification unit and the class A amplification unit are sequentially connected with the tracking filter in a matched manner;

the class AB amplifying unit is matched with the peak detector for use and coping with out-of-band interference, and when the peak detector senses out-of-band large signals, the current mode AB amplifier is turned on so that the amplifier is not saturated; and/or the presence of a gas in the gas,

a gain control unit VGA is arranged in the variable gain low noise amplifier LNA/VGA;

the VGA, by receiving the signals GC and GCB from the baseband processor BBIC, controls the switching on and off of the cascaded devices M3, M4, M5 and M6 of the low noise amplifier to accomplish the gain control.

In the above multi-standard full-compatible four-generation mobile rf front end transceiving system, the frequency synthesizer includes a multi-modulus frequency divider (MMD) connected to two ADCs in each signal processing channel, a receiving local oscillator generator (RX LO Gen) connected to the mixer in each signal processing channel, a transmitting local oscillator generator (TX LO Gen) connected to the MMD and the receiving local oscillator generator, respectively, an Automatic Frequency Controller (AFC), a phase discriminator (PFD)/voltage pump (CP), and a digital control crystal oscillator (DCXO) connected to the transmitting local oscillator generator in sequence, and a modulator (DSM) connected to the automatic frequency controller and the PFD/CP, respectively.

In the above-mentioned multi-standard full-compatible fourth-generation mobile radio frequency front end transceiving system, the transmitter includes a medium frequency transmitting unit connected with the 1880-plus-2025 MHz radio frequency signal output terminal of the transmit local oscillator generator, a high frequency transmitting unit connected with the 2300-plus-2620 MHz radio frequency signal output terminal of the transmit local oscillator generator, and a low frequency transmitting unit connected with the low frequency radio frequency signal output terminal of the transmit local oscillator generator;

the first input end of the high-frequency transmitting unit and the first input end of the intermediate-frequency transmitting unit are orthogonal input ends TXI of the transmitter; and the second input end of the high-frequency transmitting unit and the second input end of the intermediate-frequency transmitting unit are orthogonal input ends TXQ of the transmitter.

In the above multi-standard full-compatible four-generation mobile radio frequency front end transceiving system, the high frequency transmitting unit includes two parallel RFDACs and a high band transformer whose primary side is cross-connected with the output terminals of the two RFDACs

；

The intermediate frequency transmitting unit comprises two parallel RFDACs and a middle-band transformer with the primary side cross-connected with the output ends of the two RFDACs

；

The low-frequency transmitting unit comprises a Power Amplifier Driver (PAD) and a low-band transformer connected with the output end of the PAD

。

In the above multi-standard full-compatible four-generation mobile rf front-end transceiver system, each RFDAC is configured to receive data clocked by ClockBB provided by the BBIC, and includes a DAC and a Mixer (Mixer) sequentially connected to BBIC signals.

In the above multi-standard full-compatible four-generation mobile radio frequency front end transceiving system, each RFDAC unit further includes a digital control unit, and the digital control unit is respectively in signal connection with a digital-to-analog converter (DAC) and a mixer;

in the Quad-GSM mode, the digital control unit is configured to disconnect data lines of the TD-LTD mode and the TD-SCDMA mode in a programming manner, suspend a frequency mixing and DA conversion function of a radio frequency digital-to-analog converter (RFDAC), and only implement a buffering and amplifying function on signals Lop and Lon coming from LOGEN.

The utility model discloses multi-standard is compatible entirely and is taken the place of four to remove radio frequency front end broadband low noise amplification device and application system thereof of each embodiment because the device includes: the single-ended input differential output noise cancellation type low noise amplifier is used for cancelling noise by utilizing two opposite phases of a signal and the noise so as to complementarily add the signal; the tracking filter quality factor enhancement circuit is used for improving the quality factor of the output cavity by adjusting the negative transconductance to obtain the optimal out-of-band interference filtering effect; the AB module is used for enabling the current mode amplifier to be unsaturated so as to deal with stronger out-of-band interference; the mode of single-end input and three-end output can be adopted, the single inductor is used for meeting the low noise performance, large out-of-band signals are filtered out at the same time, and the broadband signals of TD-LTE, TD-SCDMA and four-band GSM are covered; therefore, the defects of high cost, few applicable standards, low data rate, low sensitivity, large noise and large occupied space in the prior art can be overcome, and the advantages of low cost, more applicable standards, high data rate, high sensitivity, small noise and small occupied space are realized.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

The technical solution of the present invention is further described in detail by the accompanying drawings and examples.

Drawings

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:

FIG. 1 is a block diagram of the working principle of a conventional TD-LTE/TD-SCDMA/2G compatible mobile phone;

fig. 2 is a schematic diagram of the operating principle of a conventional power amplifier;

fig. 3 is a schematic diagram of the working principle of the multi-standard fully-compatible fourth-generation mobile radio frequency front-end system of the present invention;

fig. 4 is a schematic diagram of the working principle of the front-end part (i.e. the multi-standard fully compatible four-generation mobile rf front-end transceiver system) of the TD-LTE/TD-SCDMA Radio Frequency Integrated Circuit (RFIC) according to the present invention;

fig. 5 is a calibration block diagram of the middle rf filter of the present invention;

FIG. 6a is a filtered waveform of FIG. 5 for different Q values;

FIG. 6b is a block diagram of the operation of the on-chip Q-factor correction unit in the tracking filter;

fig. 6c is an electrical schematic diagram of a radio frequency digital-to-analog converter (RFDAC) according to the present invention;

fig. 6d is an electrical schematic diagram of the buffer formed by the RFDAC according to the present invention;

FIG. 7 is an electrical schematic of a conventional low noise amplifier;

fig. 8 is an electrical schematic block diagram of the multi-standard fully compatible fourth generation mobile radio frequency front end wideband low noise amplifier of the present invention;

FIG. 9 is an electrical schematic diagram of a low noise amplifier with adjustable Q-boost based on FIG. 8;

FIG. 10 is an electrical schematic diagram of a low noise amplifier that can handle out-of-band interference based on the Q-enhanced of FIG. 8;

fig. 11 is a schematic diagram of an electrical principle of a detailed implementation of the Q-enhanced low noise amplifier capable of handling out-of-band interference based on fig. 8.

Detailed Description

The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are presented herein only to illustrate and explain the present invention, and not to limit the present invention.

Radio frequency front end broadband low noise amplification device embodiment

According to the embodiment of the present invention, as shown in fig. 5-6 d and fig. 8-10, a multi-standard full-compatible fourth-generation mobile rf front-end wideband low-noise amplifier device is provided, which comprises a single-ended input differential output noise cancellation type low-noise amplifier, and a tracking filter quality factor enhancement circuit and an AB-type module respectively connected to the single-ended input differential output noise cancellation type low-noise amplifier in a matching manner; wherein:

the single-ended input differential output noise cancellation type low noise amplifier is used for cancelling noise by utilizing two opposite phases of a signal and the noise so as to complementarily add the signal;

the tracking filter quality factor enhancement circuit is used for improving the quality factor of the output cavity by adjusting the negative transconductance to obtain the optimal out-of-band interference filtering effect;

and the AB module is used for enabling the current mode amplifier to be unsaturated so as to deal with stronger out-of-band interference.

The single-ended input differential output noise cancellation type low noise amplifier at least comprises a variable gain low noise amplifier LNA/VGA; and the tracking filter is matched with the tracking filter quality factor enhancement circuit and is also provided.

A noise cancellation type class A amplifying unit (Main) is arranged in the variable gain low noise amplifier LNA/VGA; the noise phases of the output end OUTP and the output end OUTn of the noise cancellation type class A amplifying unit are the same and cancel each other, and the noise cancellation formula of the LNA is as follows:

；

wherein,

and

for the transconductance values of input devices M1 and M2,

and

for inductors L1 and L2 at the operating frequency

The effective impedance of (a); the noise figure of the low noise amplifier can be expressed as:

；

wherein,

for thermal noise figure of device channel, for reducing

Influence on NF, design

>At the same time

>。

A class A amplifying unit (Main) with single-ended input and differential output is arranged in the LNA/VGA; the class A amplifying unit has the advantages that the phase of the signal of the main channel through M1 and the phase of the auxiliary signal through M2 at the output ends OUTp and OUTn are opposite, and complementary enhancement is realized; and/or the presence of a gas in the gas,

a class AB mode amplification unit connected with the class A amplification unit is further arranged inside the variable gain low noise amplifier LNA/VGA, and the class AB amplification unit and the class A amplification unit are sequentially connected with the tracking filter in a matched manner; the class AB amplifying unit is matched with the peak detector for use and coping with out-of-band interference, and when the peak detector senses out-of-band large signals, the current mode AB amplifier is turned on so that the amplifier is not saturated; and/or the presence of a gas in the gas,

a gain control unit VGA is arranged in the variable gain low noise amplifier LNA/VGA; the VGA, by receiving the signals GC and GCB from the baseband processor BBIC, controls the on and off of the cascode devices M3, M4, M5 and M6 of the low noise amplifier to accomplish the gain control.

An on-chip Q value correction unit is arranged in the tracking filter; the on-chip Q value correction unit comprises an LNA, a filtering module, a local oscillator generator, a comparator and a digital correction central controller; wherein:

when in the correcting state, the output end of the LNA is respectively connected with the input end of the filtering module and the first input end of the comparator; the output end of the local oscillator generator is connected with the second input end of the comparator, the output end of the comparator is connected with the input end of the digital correction central controller, and the output end of the digital correction central controller is connected with the control end of the filtering module.

A Q enhancement quantity adjusting unit which is matched and connected with the in-chip Q value correcting unit is also arranged in the tracking filter; q enhancement amount adjustment unit including a word program control circuit

A module; pass through-

The module sets different auxiliary materials according to different frequency ranges

Value, make Q enhance by an amount

The regulation formula of (2) is:

；

wherein,

effective impedance of output cavity for transconductance value of input device Mn

，

Is the effective value of the Q, and the Q is the effective value,

，

in order to be able to adjust the frequency,

is the parasitic resistance of the inductor, and n is a natural number.

Embodiments of a radio frequency front end transceiver system

According to the embodiment of the present invention, as shown in fig. 3-6 d and fig. 8-10, an application system of the broadband low noise amplifier of the fourth generation mobile rf front end based on the above-mentioned multi-standard full compatibility is provided, which at least includes a receiving and transmitting system of the fourth generation mobile rf front end based on the multi-standard full compatibility.

As shown in fig. 3, when the multi-standard full-compatible four-generation mobile RF front-end transceiver system of the present embodiment is applied to a multi-standard full-compatible four-generation mobile RF front-end system, the multi-standard full-compatible four-generation mobile RF front-end system includes a BBIC, a RF integrated circuit RFIC signal-connected to the BBIC and used for implementing single-input three-output multi-band signal transceiving, multi-band power amplifiers PA respectively signal-connected to the RFIC, high-power RF switches respectively signal-connected to the RFIC and the multi-band PA, and antennas respectively signal-connected to the RFIC and the high-power RF switches.

Here, the high power RF switch includes at least a high power single pole 5 throw switch SP 5T; the multi-band PA comprises 34 and 49 band PAs, 38 and 40 band PAs and 800-900MHz high linearity PA with parallel signals connected between RFIC and SP 5T.

In fig. 3, a frequency synthesizer is used to optimize the front-end part of the multi-standard full-compatible four-generation mobile rf front-end wideband low noise amplifier; for example, the TD-LTE standard, the TD-SCDMA standard and the Quad-GSM standard can be compatible.

Wherein, the receiver uses a tracking filter which can be corrected and reconstructed in the chip, so that the wave bands 2, 3, 5, 8, 34, 38, 39 and 40 are the same, the frequency signals share the same input end from 869MHz to 2620MHz, and the signals are selected according to the receiving frequency band by the Q-enhanced filter in the chip, compared with the prior art shown in FIG. 2, 11 surface acoustic filters are reduced, thereby reducing the cost; the chip package reduces 10 receiver input ends, thereby reducing the complexity of the system and improving the feasibility of the system; however, such a receiver needs to face the problems of the design of the high-linearity low-noise front-end device and the on-chip filtering process.

In fig. 3, the device names and models used include:

34. a 49-band power amplifier (B34, B39 PA; Skyworks SKY 77712);

38. a 40 band power amplifier (B38, B40 PA; Skyworks SKY 77441);

800-900MHz high linearity power amplifier (B5, B8 PA; Skyworks SKY 65126-21);

high Power Single Pole 5-Throw (High-Power Single polar Five Throw, SP 5T; Skyworks, SKY13415-485 LF);

an LTE Baseband chip (BBIC, TD-LTE/TD-SCDMA/GSM Baseband Modem, Spreadtrum, SC 9610);

Band 2: 1930~1990MHz RX, 1850-1910MHz TX (PCS)；

Band 3: 1805~1880MHz RX, 1710-1785MHz TX (DCS)；

Band 5: 869~894MHz RX, 824~849MHz TX (EGSM)；

Band 8: 925~960MHz RX, 880~915MHz TX (GSM)；

Band 34: 2010~2025MHz (TD-SCDMA)；

Band 38: 2570~2620MHz (TD-LTE)；

Band 39 F: 1880~1900MHz (TD-LTE)；

Band 39 S: 1900~1920MHz (TD-SCDMA)；

Band 40: 2300~2400MHz (TD-SCDMA)。

as shown in fig. 4 and 5, the multi-standard full-compatible four-generation mobile rf front end transceiving system includes: the system comprises an LTE diversified receiver, a single frequency synthesizer and a transmitter which are sequentially connected through signals, wherein the LTE diversified receiver is arranged on the basis of the multi-standard full-compatible four-generation mobile radio frequency front-end broadband low-noise amplification device.

The LTE diversified receiver based on the multi-standard full-compatible four-generation mobile radio frequency front-end broadband low-noise amplification device is used for carrying out front-end processing at least comprising any multiple of tracking filtering, frequency mixing, variable gain intermediate frequency and/or low noise amplification, power detection and AD conversion on radio frequency signals with preset frequency spectrum (such as the single-end receiving frequency of an antenna is 869-2620 MHz), and then sending the obtained front-end processing result to a single frequency synthesizer; the Receiver (Receiver) comprises two paths, the two paths have the same structure, the Receiver is marked with diversified (diversity) marks, and the Receiver is specially used for realizing the standard requirement of LTE and utilizes diversification and multiple channels to improve the data rate and the sensitivity. The first module of the receiver part is a Low Noise Amplifier (LNA for short), and the Noise of the rear-end module is consistent through the gain of the LNA while the Low Noise of the receiver part is ensured. The subsequent Gain control unit (VGA) is used to control the Gain of the low noise Amplifier to meet the requirement of the dynamic range of the receiver, that is, the receiver can adjust the Gain according to the size of the input signal. And a Tracking Filter (Tracking Filter) adjusts the center frequency of the Filter according to the received channel information, filters out-of-band interference and protects the subsequent mixer to work in the linearity range. The power detector senses the magnitude of the filtered signal power and provides signal power information to the baseband processor to configure the receiver. The mixer mixes the frequency signal of the local oscillator generator with the receiving frequency, converts the received frequency signal into a low-frequency signal, and the intermediate frequency Programmable Gain Amplifier (PGA) further amplifies the small signal to an amplitude that can be processed by the analog-to-digital converter, and controls the Gain to adapt to different input signal amplitudes. The Low Pass Filter (LPF) further filters out the out-of-band interference signal at the intermediate frequency, so as to ensure that the signal is within a dynamic range of the signal that can be processed by a Digital-to-Analog Converter (ADC). The digital-to-analog converter converts the analog signal into a digital signal for processing by a digital Baseband processor (Baseband, BB for short). The frequency synthesizer is used for generating local oscillation signals required by frequency mixing of the transmitter and the receiver, performing frequency synthesis processing at least comprising any multiple of multi-modulus frequency division, phase discrimination, oscillation, low-pass filtering and modulation operation, and then sending the obtained frequency synthesis result to the transmitter and the receiver;

a Digital controlled Crystal oscillator (DCXO) utilizes a relatively precise off-chip Crystal oscillator, which is combined with an on-chip oscillation circuit to generate a precise 26MHz frequency signal as a reference source of a frequency synthesizer, a Voltage Controlled Oscillator (VCO) generates a frequency signal of 26MHz frequency after being divided by 2 through an analog Divider and then is divided by a Multi-mode Divider (MMD) to generate a frequency signal of 26MHz frequency, compared with a reference source generated by a numerical control crystal oscillator, a Phase Frequency Detector (PFD) and a reference source generated by the numerical control crystal oscillator have the difference of Frequency and Phase converted into voltage through a voltage Pump (CP) to feed back and adjust the voltage of the voltage-controlled oscillator, therefore, a stable and accurate frequency signal is output, and a Loop Filter (LP for short) is added between the voltage pump and the voltage-controlled oscillator in order to inhibit the noise introduced by the digital multi-grinding frequency divider. Automatic Frequency Control (AFC) coarsely adjusts the Frequency of a voltage controlled oscillator before locking. A Delata-Sigma Modulator (DSM) introduces a modulation signal by adjusting the frequency division multiple of a multi-modulus frequency divider, and is used in a direct modulation mode of a frequency synthesizer of GMSK.

The single frequency synthesizer is used for performing any frequency synthesis processing at least including multiple analog-to-digital frequency division, phase discrimination, oscillation, low-pass filtering and modulation operations based on a front-end processing result sent by the LTE diversified receiver, and sending an obtained frequency synthesis result to the transmitter.

The transmitter is configured to perform any frequency conversion processing at least including radio frequency DA conversion, signal attenuation, and frequency conversion operations based on a frequency synthesis result sent by a single frequency synthesizer, and output frequency conversion results (e.g., a high-frequency signal with a frequency of 2300-.

The transmitter is divided into a high band (TX _ HB) and a low band (TX _ LB) according to output frequency, the high band covers the frequency band from 1880MHz to 2025MHz, the low band covers the frequency band from 2300MHz to 2620MHz, and corresponding high band transformers and low band transformers are respectively arranged for obtaining the optimal peak value. The quadrature I output and Q output of the high band are added at the high band transformer, the mirror signal is cancelled, and the local oscillator leakage is cancelled here due to the differential design. The quadrature I and Q outputs of the low band are summed at the low band transformer, eliminating the image signal, and local oscillator leakage is also eliminated here due to the differential design. The low band local oscillator quadrature I and Q input signal frequencies are 1880MHz to 2025MHz, the high band local oscillator quadrature I and Q input signal frequencies are 23000MHz to 2620MHz. The RFDAC is a radio frequency digital-to-analog converter, which is described in detail later.

Specifically, the LTE diversity receiver includes two signal processing channels arranged in parallel, and a power detector cooperatively arranged between the two signal processing channels; each signal processing channel comprises an LNA/VGA, a mixer, a PGA/LPF and two ADCs which are arranged in parallel and are sequentially in signal connection, and a tracking filter which is at least of Q enhancement type and/or Q adjustable type and is in signal connection with the output end of the LNA/VGA;

first output ends of the two ADCs are respectively used as a diversified orthogonal I output end RXI _ diversity and a diversified orthogonal Q output end RXQ _ diversity of the LTE diversified receiver or used as an orthogonal I output end RXI and a receiver orthogonal Q output end RXQ of the LTE receiver; second output ends of the two ADCs are connected, and the two ADCs are used for receiving signals from the frequency synthesizer as sampling frequencies; the power detector is connected between the LNA/VGA output ends in the two signal processing channels; and the output end of the power detector is used for outputting a power detection result.

In the implementation process of using the LTE diversity receiver as a single-ended multiband receiver, because there is no front-end filter, the front-end transconductance stage (Gm) of the low-noise receiver LNA can not only amplify a weak signal, but also cannot distort when facing out-of-band interference signals (Blocker) with power as high as 0 dBm. Therefore, an AB-class and A-class composite transconductance stage can be adopted, when an out-of-band interference signal comes, the AB-class provides more current to ensure no distortion, and the A-class transconductance stage ensures small-signal linearity and sensitivity.

A Variable Gain Amplifier (VGA) is used to guarantee the dynamic range of the receiver. The radio frequency filter is located at the output end of the LNA and comprises an output inductor, a capacitor bank and a negative transconductance, a 1880-2620 MHz target frequency band is favorable for realizing an on-chip inductor with a higher Q value, the frequency is not very high, the inductance value is not too large so as to need a very large chip area, the capacitor bank is used for adjusting the target frequency band, and the negative transconductance can improve the whole Q value to be more than 20. Meanwhile, by combining a passive mixer of local oscillator signals with duty ratio of 25% and intermediate frequency filtering, the overall 20MHz out-of-band signal rejection capability of 20dBc can be achieved, and the system index requirement can be met.

As shown in fig. 6b, an on-Chip Q value correction unit is disposed Inside the tracking filter (i.e., Inside the Chip of the tracking filter); the on-chip Q value correction unit comprises a Low Noise Amplifier (LNA), a filter module, a Local Oscillator generator (Local Oscillator), a comparator and a Digital correction central controller (Digital Calibration Engine); wherein: when in the correcting state, the output end of the LNA is respectively connected with the input end of the filtering module and the first input end of the comparator; the output end of the local oscillator generator is connected with the second input end of the comparator, the output end of the comparator is connected with the input end of the digital correction central controller, and the output end of the digital correction central controller is connected with the control end of the filtering module.

In fig. 6b, the Q value of the tracking filter is corrected, and the digitally corrected engine controls the entire correction process and timing, the correction process including:

the method comprises the steps of disconnecting an input end of an LNA from an antenna, and programming a filter into an oscillator by increasing a negative transconductance;

programming a local oscillator (namely a local oscillator generator) to the center frequency of a desired frequency band;

thirdly, detecting the oscillation starting of the oscillator through DC (direct current) bias of a medium-frequency output end of the frequency mixer;

reducing the negative transconductance value until the front end oscillation disappears, and recording the setting of the negative transconductance value;

and fifthly, a fixed negative transconductance value is added to ensure that the front-end amplification filtering is stable. The Q value is optimal.

As shown in fig. 4 and 5, the frequency synthesizer includes an MMD connected to two ADCs in each signal processing channel, a receiving local oscillator generator connected to a mixer in each signal processing channel, a transmitting local oscillator generator connected to the MMD and the receiving local oscillator generator, an automatic frequency controller, a PFD/CP, and a digitally controlled crystal oscillator connected to the transmitting local oscillator generator in sequence, and a modulator connected to the automatic frequency controller and the PFD/CP, respectively.

In the process of using the frequency synthesizer as a single frequency synthesizer, because TD-LTE and TD-SCDMA are both time division duplex (time division duplex TDD) systems, and receive and transmit are performed in time division (not simultaneously), the receiver and transmitter can use the same frequency synthesizer, which reduces the complexity of the system compared to a dual frequency synthesizer system, and reduces the cost due to the reduction of chip area.

As shown in fig. 4 and fig. 5, the transmitter includes an intermediate frequency transmitting unit connected to the 1880-plus 2025MHz radio frequency signal output terminal of the transmit local oscillator generator, a high frequency transmitting unit connected to the 2300-plus 2620MHz radio frequency signal output terminal of the transmit local oscillator generator, and a low frequency transmitting unit connected to the 824-plus 915MHz radio frequency signal output terminal of the transmit local oscillator generator;

the first input end of the high-frequency transmitting unit and the first input end of the intermediate-frequency transmitting unit are orthogonal input ends TXI of the transmitter; and the second input end of the high-frequency transmitting unit and the second input end of the intermediate-frequency transmitting unit are orthogonal input ends TXQ of the transmitter.

The high-frequency transmitting unit comprises two parallel RFDACs and a high-band transformer, wherein the primary side of the high-band transformer is in cross connection with the output ends of the two RFDACs; the intermediate frequency transmitting unit comprises two parallel RFDACs and an intermediate band transformer of which the primary side is in cross connection with the output ends of the two RFDACs; and the low-frequency transmitting unit comprises a Power Amplifier Driver (PAD) and a low-band transformer connected with the output end of the PAD.

Here, the transmitter can be used as a three-output transmitter, as shown in fig. 5, and the transmitter output spectrum purity, efficiency and linearity are required to be separated into three parts, i.e., a high-frequency part B38 and a low-frequency part B40, a medium-frequency part B2, a medium-frequency part B3, a medium-frequency part B34 and a medium-frequency part B5 and a low-frequency part B8, from the outside of the chip. Similarly, the signal channels in the chip are also divided into three paths of independent high frequency, intermediate frequency and low frequency, so that the design can be optimized independently.

Fig. 5 can show the calibration process of the rf filter in the chip, in which the dark module is a functional module activated during the calibration process, and at this time, the front-end module is programmed into an oscillator by increasing the negative transconductance value, the frequency of the oscillator is mixed with the frequency synthesizer signal to output a baseband intermediate frequency signal, the frequency is detected by the baseband circuit, the rf filter is set by adjusting the capacitor bank of the front end, and the front-end device leaves the oscillation state and enters the amplification state by decreasing the negative transconductance after the setting. At this time, the Q value of the rf filter is the highest, and the selectivity of the filter is the best, and as shown in fig. 6a, the Q value of the filter can be increased from 3 to about 100.

As shown in fig. 6c, each RFDAC, for receiving data clocked ClockBB provided by the BBIC, comprises a DAC and a mixer in turn connected to the BBIC signal.

FIG. 6c may show an RF-DAC type transmitter circuit used in the above embodiment, using

The frequency is used as the sampling frequency of the DAC, so that the sampling frequency of the DAC is multiplied by 2The output signal is not required to be filtered, and can be directly superposed with the output signal of the transmitter and then output, so that the power of the output signal is enhanced, andthe DAC repetition frequency spectrum above 3 frequency multiplication can be selectively filtered by an output end radio frequency transformer due to high frequency, so that the system does not need a low-pass filter and a current-voltage conversion interface module, and power consumption and noise are reduced compared with a traditional transmitter. Due to the adoption of a digital unit design, the weighting of multiple units can drive off-chip power amplification, and a Power Amplification Driver (PAD) module is not required in the system.

As shown in fig. 6d, each RFDAC cell further includes a digital control unit, and the digital control unit is respectively connected to the DAC and the mixer by signals; in the Quad-GSM mode, the digital control unit is used for disconnecting the data lines of the TD-LTD mode and the TD-SCDMA mode in a programming mode, so that the frequency mixing and DA conversion functions of the RFDAC are suspended, and only the buffer amplification functions of signals Lop and Lon coming from the LOGEN are realized.

In the Quad-GSM mode, in order to meet the requirement of strict system noise, the mode signal bandwidth is narrower than 200KHz, which is more suitable for the mode of directly modulating the frequency synthesizer by baseband signals, so the mode transmitter does not need a digital-to-analog converter, and in order to share the output module of the middle frequency band (MB) and the on-chip transformer with other modes, the digital-to-analog converter can be programmed into an output buffer by a digital control unit in a programmable mode. As shown in fig. 6d, the data lines used in other modes are disconnected, and the devices of the DAC unit are switched to a fixed level, such as a high level, and are put into an NMOS state, so that the device is in a conducting state.

Fig. 8 is a schematic block diagram of the low noise amplifier of the present invention. The low noise amplifier receives a single-ended input signal IN, is impedance-matched to a class A mode Main amplifier (Main) for amplification IN a broadband mode, and is subjected to Gain Control (GC), and differential output OUTP and OUTN are output through a Tracking Filter before output. The class AB mode start-up assist (Aux) amplifier when the Peak Detector senses out-of-band large signal interference. To maintain the linearity of the output signal.

In fig. 9, the tracking filter includes an on-chip Q-factor correction unit. In fig. 10, a Q enhancement amount adjusting unit cooperatively connected to the on-chip Q value correcting unit is further provided inside the tracking filter; q enhancement amount adjustment unit including a word program control circuit

A module; pass through-

The module sets different auxiliary materials according to different frequency ranges

Value, make Q enhance by an amount

The regulation formula of (2) is:

；

wherein,

effective impedance of output cavity for transconductance value of input device Mn，Is the effective value of the Q, and the Q is the effective value,

，for adjusted frequencyThe ratio of the total weight of the particles,

is the parasitic resistance of the inductor, and n is a natural number.

In fig. 10, an AB mode clock unit and a Q enhancement mode broadband unit respectively connected to the on-chip Q value correction unit in a matching manner are further provided in the tracking filter, and the AB mode clock unit, the on-chip Q value correction unit and the Q enhancement mode broadband unit are sequentially connected in a matching manner; the AB mode clock unit comprises a peak detector and an AB mode current domain design module, wherein the peak detector is used for preventing the amplifier from being saturated; and the Q enhanced broadband unit comprises a Q enhanced output LC cavity which is used for selecting a receiving signal and filtering an interference signal.

In fig. 9 and 10, a single-ended input common-drop amplifier design is used, with the input added from the source and the drain output of device M1, whose input impedance matching is broadband, as long as it is satisfactory

，

Is the transconductance of M1. However, the disadvantage of the common-gate design is that the Noise Figure (Noise Figure) is greater than 3dB, so we adopt the design of thermal Noise cancellation, and add the common-source device M2, where the signal enters from the gate of M2 and the drain outputs, so that the gate thermal Noise Vn1 of M1 via the source of M1 is unchanged in phase at the gate of M2, whereas the drain phase at M2 is opposite, and via the cascade device is unchanged in phase, the output OUTn is opposite in phase to Vn1, and at the same time Vn1 via the drain of M1 is opposite in phase, and via the cascade device, the output OUTp is also opposite in phase to Vn1, so that the gate thermal Noise Vn1 of M1 appears as common-mode Noise at the differential outputs OUTp and OUTn, thereby suppressing cancellation.

A noise cancellation type class A amplifying unit (Main) is arranged in the variable gain low noise amplifier LNA/VGA; the noise phases of the output end OUTP and the output end OUTn of the noise cancellation type class A amplifying unit are the same and are cancelled; in order to cancel the noise, the noise cancellation formula of the LNA must satisfy:

；

and

for the transconductance values of input devices M1 and M2,

and

for inductors L1 and L2 at the operating frequency

The effective impedance of. Thus, the noise figure of the low noise amplifier can be expressed as:

；

wherein,

is the device channel thermal noise figure. To reduce

Influence on NF, design

>

At the same time

>

. This achieves both noise rejection and conversion of a single-ended input to a differential output.

Or, a class A amplifying unit (Main) with single-ended input and differential output is arranged in the variable gain low noise amplifier LNA/VGA; the signal via the M1 primary channel and the auxiliary signal via M2 are in opposite phase at output OUTp and output OUTn, with complementary enhancement; and/or the presence of a gas in the gas,

a class AB mode amplification unit connected with the class A amplification unit is further arranged inside the variable gain low noise amplifier LNA/VGA, and the class AB amplification unit and the class A amplification unit are sequentially connected with the tracking filter in a matched manner; the class AB amplifying unit is matched with the peak detector for use and coping with out-of-band interference, and when the peak detector senses out-of-band large signals, the current mode AB amplifier is turned on so that the amplifier is not saturated; and/or the presence of a gas in the gas,

a gain control unit VGA is arranged in the variable gain low noise amplifier LNA/VGA; the VGA, by receiving the signals GC and GCB from the baseband processor BBIC, controls the on and off of the cascode devices M3, M4, M5 and M6 of the low noise amplifier to accomplish the gain control.

The Peak Detector (Peak Detector) is used for detecting the magnitude of an input signal, and since the Peak Detector is connected to an input end without frequency selectivity, a large signal out of a band can be sensed, when an interference signal exceeds a threshold value, more input devices M1 and M2 (shown by a dotted line) are connected, the direct current bias of the input devices is reduced, and the input devices work in a class AB mode instead of a normal class A mode, the AB mode is a current mode, and when the signal is too large, a voltage domain has no space limited by a power supply voltage, the signal is not saturated by the current mode.

In addition, the output inductor is connected with the capacitor bank in parallel, and is adjusted by a control signal Band according to different frequency bands, so that the output end has frequency selectivity, and out-of-Band interference is filtered out

Wherein

In order to be able to adjust the frequency,is the parasitic resistance of the inductor. Q value is close to 3, and the interference out of band is not much inhibited, all the applications of the method

Value enhancement technique, as shown on the right of FIG. 8, using negative transconductance generation

And the effective impedance of the output cavity

In parallel, because:

；

when in use

Value increased to

When the temperature of the water is higher than the set temperature,

the theoretical value of (a) is infinite, causing the amplifier to start oscillating.

Because, different frequency bands are required

All of which are different in value, as shown in FIG. 10, are controlled by designing a digital program

The module sets different auxiliary materials according to different frequency ranges

Value, maximizing the Q value without oscillation. Because of this, it is possible to reduce the number of the,

；

so that of the lowest frequency band

The minimum value, so the maximum is required

The value is obtained.

In fig. 11, two measures are taken to cope with out-of-band large signal interference, and the peak detector and class AB current domain design are first adopted to prevent the amplifier from saturating, as shown in the right part, and the class AB mode is set by the control signals Bias _ BLK and BLK after the peak detector alarms. At this time, the current is large due to the large signal mode, and the impedance matching of the input is not important any more. Secondly, select the received signal through the output LC chamber of Q enhancement mode, the filtering interference signal makes it can not get into next module, down conversion mixer:

。

in view of the problems and the defects of the traditional low noise amplifier, the multi-standard full-compatible four-generation mobile radio frequency front end broadband low noise amplifying device adopts a single-ended input, uses a single inductor, meets the noise performance, can filter out large out-of-band signals, and covers broadband amplifiers of TD-LTE, TD-SCDMA and four-band GSM.

Above-mentioned embodiment the utility model discloses multi-standard is compatible entirely four generations and is removed radio frequency front end broadband low noise amplification device can reach following beneficial effect at least:

the method has the advantages that single-end input is achieved, and pin count is saved;

broadband matching is adopted, and the method is suitable for multi-standard and multi-frequency-band systems;

the noise is low, and a noise cancellation technology is applied;

internal high-frequency filtering is achieved, and an external sound surface filter is not needed, so that system cost is saved;

and the design of the inductor in the single chip is achieved, so that the area of the chip is saved.

Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The multi-standard full-compatible four-generation mobile radio frequency front-end broadband low-noise amplification device is characterized by comprising a single-ended input differential output noise cancellation type low-noise amplifier, a tracking filter quality factor enhancement circuit and an AB type module, wherein the tracking filter quality factor enhancement circuit and the AB type module are respectively connected with the single-ended input differential output noise cancellation type low-noise amplifier in a matching way; wherein:

the single-ended input differential output noise cancellation type low noise amplifier is used for cancelling noise by using two opposite phases of a signal and noise so as to complementarily add the signals;

the tracking filter quality factor enhancement circuit is used for improving the quality factor of the output cavity by adjusting the negative transconductance to obtain the optimal out-of-band interference filtering effect;

and the AB module is used for enabling the current mode amplifier to be unsaturated so as to deal with stronger out-of-band interference.

2. The multi-standard fully compatible four-generation mobile radio frequency front end wideband low noise amplification device according to claim 1, wherein the single-ended input differential output noise cancellation type low noise amplifier comprises at least a variable gain low noise amplifier LNA/VGA;

and the tracking filter is matched with the tracking filter quality factor enhancement circuit and is also provided.

3. The multi-standard full-compatible four-generation mobile radio frequency front end wideband low noise amplifier device according to claim 2, wherein a noise cancellation type class A amplifying unit (Main) is arranged inside the variable gain low noise amplifier LNA/VGA;

the noise phases of the output end OUTP and the output end OUTn of the noise cancellation type class A amplifying unit are the same and cancel each other, and the noise cancellation formula of the LNA is as follows:

；

wherein,

and

for the transconductance values of input devices M1 and M2,

and

for inductors L1 and L2 at the operating frequency

The effective impedance of (a); the noise figure of the low noise amplifier can be expressed as:

；

wherein,

for thermal noise figure of device channel, for reducing

Influence on NF, design

>

At the same time

>

。

4. The multi-standard full-compatible four-generation mobile radio frequency front-end wideband low-noise amplification device according to claim 2, wherein a single-ended input differential output class A amplification unit (Main) is arranged inside the variable gain low-noise amplifier LNA/VGA; the class A amplifying unit has the advantages that the phase of the signal of the main channel through M1 and the phase of the auxiliary signal through M2 at the output ends OUTp and OUTn are opposite, and complementary enhancement is realized; and/or the presence of a gas in the gas,

a class AB mode amplification unit connected with the class A amplification unit is further arranged inside the variable gain low noise amplifier LNA/VGA, and the class AB amplification unit and the class A amplification unit are sequentially connected with the tracking filter in a matched manner; the class AB amplifying unit is matched with the peak detector for use and coping with out-of-band interference, and when the peak detector senses out-of-band large signals, the current mode AB amplifier is turned on so that the amplifier is not saturated; and/or the presence of a gas in the gas,

a gain control unit VGA is arranged in the variable gain low noise amplifier LNA/VGA; the VGA, by receiving the signals GC and GCB from the baseband processor BBIC, controls the switching on and off of the cascaded devices M3, M4, M5 and M6 of the low noise amplifier to accomplish the gain control.

5. The multi-standard full-compatible four-generation mobile radio frequency front end broadband low noise amplification device according to claim 2, wherein an on-chip Q-value correction unit is arranged inside the tracking filter;

the on-chip Q value correction unit comprises an LNA, a filtering module, a local oscillator generator, a comparator and a digital correction central controller; wherein:

when in the correcting state, the output end of the LNA is respectively connected with the input end of the filtering module and the first input end of the comparator; the output end of the local oscillator generator is connected with the second input end of the comparator, the output end of the comparator is connected with the input end of the digital correction central controller, and the output end of the digital correction central controller is connected with the control end of the filtering module.

6. The multi-standard full-compatible four-generation mobile radio frequency front end broadband low noise amplification device according to claim 5, wherein a Q enhancement amount adjusting unit cooperatively connected with the on-chip Q value correcting unit is further provided inside the tracking filter;

the Q is increasedRobust adjustment unit including for word programming control

A module; pass through-

The module sets different auxiliary materials according to different frequency rangesValue, make Q enhance by an amount

The regulation formula of (2) is:

；

wherein,

effective impedance of output cavity for transconductance value of input device Mn，

Is the effective value of the Q, and the Q is the effective value,，

in order to be able to adjust the frequency,

parasitic electricity being inductanceAnd n is a natural number.

7. The application system of the multi-standard fully compatible quad-generation mobile radio frequency front end broadband low noise amplification device according to claim 1, wherein the application system at least comprises a radio frequency front end transceiver system of a multi-standard fully compatible mobile user terminal chip;

the radio frequency front end receiving and transmitting system of the multi-standard full-compatible mobile user terminal chip comprises:

the LTE diversified receiver based on the multi-standard full-compatible four-generation mobile radio frequency front-end broadband low-noise amplification device is used for carrying out any front-end processing on radio frequency signals of a preset frequency spectrum, wherein the front-end processing at least comprises tracking filtering, frequency mixing, variable gain intermediate frequency and/or low noise amplification, power detection and AD conversion operation;

a single frequency synthesizer, configured to perform any multiple frequency synthesis processing at least including multiple analog-to-digital frequency division, phase discrimination, oscillation, low-pass filtering, and modulation operation based on a front-end processing result obtained by performing front-end processing by the LTE diversity receiver;

and the transmitter is used for performing any frequency conversion processing at least comprising radio frequency DA conversion, signal attenuation and frequency conversion operation on the basis of a frequency synthesis result obtained by performing frequency synthesis processing on the single frequency synthesizer, and outputting the frequency conversion result obtained by the frequency conversion processing from a high-frequency output end, a medium-frequency output end and a low-frequency output end respectively.

8. The application system of the multi-standard full-compatible quad-generation mobile radio frequency front end broadband low noise amplification device according to claim 7, wherein the LTE diversity receiver comprises two signal processing channels arranged in parallel and a power detector cooperatively arranged between the two signal processing channels;

each signal processing channel comprises a variable gain low noise amplifier LNA/VGA, a mixer, a PGA/LPF and two ADCs arranged in parallel which are sequentially in signal connection, and a tracking filter which is at least of Q enhancement type and/or Q adjustable type and is in signal connection with the output end of the LNA/VGA;

the first output ends of the two ADCs are respectively used as a diversified orthogonal I output end RXI _ diversity and a diversified orthogonal Q output end RXQ _ diversity of the LTE diversified receiver, or used as an orthogonal I output end RXI and a receiver orthogonal Q output end RXQ of the LTE receiver; second output ends of the two ADCs are connected, and the two ADCs are used for receiving signals from the frequency synthesizer as sampling frequencies;

the power detector is connected between the LNA/VGA output ends in the two signal processing channels; and the output end of the power detector is used for outputting a power detection result.

9. The application system of the multi-standard full-compatible quad-generation mobile radio frequency front end broadband low noise amplification device according to claim 8, wherein an on-chip Q-value correction unit is arranged inside the tracking filter;

the on-chip Q value correction unit comprises an LNA, a filtering module, a local oscillator generator, a comparator and a digital correction central controller; wherein:

when in the correcting state, the output end of the LNA is respectively connected with the input end of the filtering module and the first input end of the comparator; the output end of the local oscillator generator is connected with the second input end of the comparator, the output end of the comparator is connected with the input end of the digital correction central controller, and the output end of the digital correction central controller is connected with the control end of the filtering module; and the number of the first and second groups,

a Q enhancement quantity adjusting unit which is matched and connected with the in-chip Q value correcting unit is also arranged in the tracking filter;

the Q enhancement amount adjusting unit includes a word programming control unit

A module; pass through-

The module sets different auxiliary materials according to different frequency ranges

Value, make Q enhance by an amount

The regulation formula of (2) is:

；

wherein,effective impedance of output cavity for transconductance value of input device Mn

，

Is the effective value of the Q, and the Q is the effective value,

，

in order to be able to adjust the frequency,

is the parasitic resistance of the inductor, and n is a natural number.

10. The application system of the multi-standard full-compatible quad-generation mobile radio frequency front end wideband low noise amplifier according to claim 8, wherein a noise cancellation type class A amplifying unit (Main) is disposed inside the variable gain low noise amplifier LNA/VGA;

the noise phases of the output end OUTP and the output end OUTn of the noise cancellation type class A amplifying unit are the same and cancel each other, and the noise cancellation formula of the LNA is as follows:

；

wherein,

and

for the transconductance values of input devices M1 and M2,andfor inductors L1 and L2 at the operating frequency

The effective impedance of (a); the noise figure of the low noise amplifier can be expressed as:

；

wherein,

for thermal noise figure of device channel, for reducing

Influence on NF, design

>

At the same time

>

(ii) a Or,

a class A amplifying unit (Main) with single-ended input and differential output is arranged in the variable gain low noise amplifier LNA/VGA;

the signal via the M1 primary channel and the auxiliary signal via M2 are in opposite phase at output OUTp and output OUTn, with complementary enhancement; and/or the presence of a gas in the gas,

a class AB mode amplification unit connected with the class A amplification unit is further arranged inside the variable gain low noise amplifier LNA/VGA, and the class AB amplification unit and the class A amplification unit are sequentially connected with the tracking filter in a matched manner;

the class AB amplifying unit is matched with the peak detector for use and coping with out-of-band interference, and when the peak detector senses out-of-band large signals, the current mode AB amplifier is turned on so that the amplifier is not saturated; and/or the presence of a gas in the gas,

a gain control unit VGA is arranged in the variable gain low noise amplifier LNA/VGA;

the VGA, by receiving the signals GC and GCB from the baseband processor BBIC, controls the switching on and off of the cascaded devices M3, M4, M5 and M6 of the low noise amplifier to accomplish the gain control.

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