CN216390930U - Radio frequency power amplifier, chip and electronic equipment - Google Patents
Radio frequency power amplifier, chip and electronic equipment Download PDFInfo
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- CN216390930U CN216390930U CN202122739262.8U CN202122739262U CN216390930U CN 216390930 U CN216390930 U CN 216390930U CN 202122739262 U CN202122739262 U CN 202122739262U CN 216390930 U CN216390930 U CN 216390930U
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- 230000001939 inductive effect Effects 0.000 claims abstract description 3
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- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 230000001629 suppression Effects 0.000 abstract description 10
- 238000004804 winding Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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Abstract
The embodiment of the utility model provides a radio frequency power amplifier, which comprises a first transformer, a first-stage power amplifier, a second transformer, a second-stage power amplifier, a third transformer, a first capacitor and a second capacitor which are connected in sequence; the first capacitor is used for forming a resonator structure with the primary coil inductor of the first transformer; the second capacitor is used for being in inductive resonance with the secondary coil of the second transformer at double frequency. The embodiment of the utility model provides a chip and electronic equipment. The radio frequency power amplifier, the chip and the electronic equipment have good harmonic suppression effect.
Description
Technical Field
The utility model relates to the technical field of circuits, in particular to a radio frequency power amplifier, a chip and electronic equipment.
Background
At present, the development of wireless communication technology, especially the application of 5G, is wider and wider. The 5GNR is a global 5G standard based on a brand-new air interface design of OFDM, and is also a very important cellular mobile technology foundation of the next generation, and the 5G technology can realize ultra-low time delay and high reliability. Due to the requirements of faster data transmission and high linearity, the rf power amplifier in the rf front-end module becomes an important component.
A related art radio frequency power amplifier generally includes a first stage power amplifier, a second power amplifier, and an output matching network, which are connected in sequence. Referring to fig. 1, fig. 1 is a schematic circuit diagram of a related art rf power amplifier. The output matching network comprises an inductor L1, a capacitor C1, an inductor L2 and a capacitor C2. The radio frequency signal is input from a radio frequency signal input end RFin, passes through two-stage power amplification of a first-stage power amplifier and a second-stage power amplifier, passes through an output matching network, and is fed from a radio frequency signal output end RFout to an external antenna to be transmitted.
However, the related art radio frequency power amplifier is a 4G technology. The main advantage of the 5G network is that the data transmission rate is much higher than that of the previous cellular network, up to 10Gbit/s, faster than that of the current wired internet, and 100 times faster than that of the previous 4G LTE cellular network. Another advantage is lower network delay (faster response time), below 1 millisecond, and 30-70 milliseconds for 4G. The rf power amplifier of the 4G LTE rf front-end module has not been able to meet the linearity requirement of 5G-NR.
Therefore, there is a need to provide a new rf power amplifier and related chip and device to solve the above problems.
SUMMERY OF THE UTILITY MODEL
In view of the above deficiencies of the prior art, the utility model provides a radio frequency power amplifier, a chip and an electronic device with good harmonic suppression effect.
In order to solve the above technical problem, in a first aspect, an embodiment of the present invention provides a radio frequency power amplifier, which includes a first transformer, a first stage power amplifier, a second transformer, a second stage power amplifier, a third transformer, a first capacitor, and a second capacitor, which are connected in sequence;
the first transformer is used for converting an input single-ended signal into two paths of differential signals and coupling the two paths of differential signals to the first-stage power amplifier;
the first-stage power amplifier is used for amplifying the two coupled differential signals and outputting two amplified differential signals;
the second transformer is used for coupling the two paths of amplified differential signals to the second-stage power amplifier;
the second-stage power amplifier is used for amplifying the two coupled amplified differential signals;
the third transformer is used for synthesizing the two amplified differential signals amplified by the second-stage power amplifier into a signal and outputting the signal;
the first capacitor is used for forming a resonator structure with the primary coil inductance of the first transformer;
the second capacitor is used for being in inductive resonance with a secondary coil of the second transformer at double frequency.
Preferably, the first stage power amplifier comprises a first power amplifier and a second power amplifier; the second stage power amplifier comprises a third power amplifier and a fourth power amplifier;
a first end of a primary coil of the first transformer is used as an input end of the radio frequency power amplifier, and the first end of the primary coil of the first transformer is connected to the ground after being connected with the first capacitor in series;
a second end of the primary coil of the first transformer is connected to ground; a first end of a secondary coil of the first transformer is connected to an input end of the first power amplifier; a second end of the secondary coil of the first transformer is connected to an input end of the second power amplifier;
the output end of the first power amplifier is connected to the first end of the primary coil of the second transformer;
the output end of the second power amplifier is connected to the second end of the primary coil of the second transformer;
a first end of a secondary coil of the second transformer is connected to an input end of the third power amplifier; a second end of the secondary coil of the second transformer is connected to an input end of the fourth power amplifier;
an output terminal of the third power amplifier is connected to a first terminal of a primary coil of the third transformer;
an output end of the fourth power amplifier is connected to a second end of the primary coil of the third transformer;
a second end of the secondary coil of the third transformer is connected to ground; a first end of a secondary coil of the third transformer is used as an output end of the radio frequency power amplifier;
a first end of the second capacitor is connected to a central tap end of a secondary coil of the second transformer; the second end of the second capacitor is connected to the ground;
the second capacitor and the second transformer resonate at double frequency.
Preferably, the first capacitor and the second capacitor are both parameter-adjustable capacitors.
Preferably, the first-stage power amplifier and the second-stage power amplifier are both implemented by transistors.
In a second aspect, an embodiment of the present invention provides a chip including the radio frequency power amplifier.
In a third aspect, embodiments of the present invention provide an electronic device including the radio frequency power amplifier.
Compared with the related art, the radio frequency power amplifier, the chip and the electronic equipment are divided into two parts of a first power amplifier and a second power amplifier through the first-stage power amplifier; simultaneously splitting the second-stage power amplifier into a third power amplifier and a fourth power amplifier; the output signal of the first-stage power amplifier is split and coupled to the first power amplifier and the second power amplifier through the first transformer, then the output signal of the first-stage power amplifier is coupled to the third power amplifier and the fourth power amplifier through the second transformer, and then the two paths of signals are combined into one path of signal to be output through the third transformer. The circuit structure enables the radio frequency power amplifier to meet the requirements of high power and high linearity. The first end of the primary coil of the first transformer is connected to the ground after being connected in series with the first capacitor, and the circuit structure enables the first capacitor and the primary coil inductor of the first transformer to form a resonator structure, so that a signal input to the first-stage power amplifier resonates in a working frequency band, the radio frequency power amplifier is favorable for meeting requirements of high power and high linearity, clutter is also favorably inhibited, and the harmonic suppression effect of the radio frequency power amplifier is good. Meanwhile, the second capacitor and the second transformer resonate at double frequency, namely second-order harmonic 2F0, and the circuit structure enables harmonic suppression effects of the radio frequency power amplifier, the chip and the electronic equipment to be good.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the utility model will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings, there is shown in the drawings,
fig. 1 is a schematic circuit diagram of a related art rf power amplifier;
fig. 2 is a schematic circuit diagram of the rf power amplifier of the present invention.
Detailed Description
The following detailed description of embodiments of the utility model refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the utility model. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
The embodiment of the utility model provides a radio frequency power amplifier 100.
Referring to fig. 2, fig. 2 is a schematic circuit diagram of the rf power amplifier 100 according to the present invention.
The radio frequency power amplifier 100 of the utility model comprises a first transformer 1, a first-stage power amplifier 2, a second transformer 3, a second-stage power amplifier 4, a third transformer 5, a first capacitor CT1 and a second capacitor CT2 which are connected in sequence.
The first transformer 1 is configured to convert an input single-ended signal into two differential signals, and couple the two differential signals to the first-stage power amplifier 2.
The first-stage power amplifier 2 is configured to amplify the two coupled differential signals and output two amplified differential signals. Specifically, the first stage power amplifier 2 includes a first power amplifier 21 and a second power amplifier 22.
The second transformer 3 is used for coupling the two paths of amplified differential signals to the second-stage power amplifier 4.
The second-stage power amplifier 4 is configured to amplify the two coupled amplified differential signals. The second stage power amplifier 4 includes a third power amplifier 41 and a fourth power amplifier 42.
The third transformer 5 is configured to combine the two amplified differential signals amplified by the second-stage power amplifier 4 into one signal and output the signal.
The first capacitor CT1 is used to form a resonator structure with the primary coil inductance of the first transformer 1.
The second capacitor CT2 is used to resonate with the secondary coil of the second transformer 3 at double frequency.
In this embodiment, the first-stage power amplifier 2 and the second-stage power amplifier 4 are implemented by transistors, which is beneficial for the radio frequency power amplifier 100 of the present invention to be integrated in a chip, and meet 5G technical indexes, and have good performance in the N40/N41 frequency band.
Specifically, the specific circuit structure of the rf power amplifier 100 of the present invention is:
a first end of the primary coil of the first transformer 1 is used as the input end RFin of the rf power amplifier 100, and the first end of the primary coil of the first transformer 1 is connected to the ground GND by being connected in series with the first capacitor CT 1.
The second end of the primary coil of the first transformer 1 is connected to ground GND. A first end of the secondary winding of the first transformer 1 is connected to an input of the first power amplifier 21. A second terminal of the secondary winding of the first transformer 1 is connected to an input terminal of the second power amplifier 22.
The output terminal of the first power amplifier 21 is connected to a first terminal of the primary coil of the second transformer 3.
The output terminal of the second power amplifier 22 is connected to the second terminal of the primary coil of the second transformer 3.
A first terminal of the secondary winding of the second transformer 3 is connected to an input terminal of the third power amplifier 41. A second terminal of the secondary winding of the second transformer 3 is connected to an input terminal of the fourth power amplifier 42.
An output terminal of the third power amplifier 41 is connected to a first terminal of the primary coil of the third transformer 5.
An output terminal of the fourth power amplifier 42 is connected to a second terminal of the primary coil of the third transformer 5.
A second end of the secondary winding of the third transformer 5 is connected to ground GND. A first end of the secondary winding of the third transformer 5 is used as an output terminal RFout of the rf power amplifier 100.
A first terminal of the second capacitor CT2 is connected to the center tap terminal of the second transformer 3. A second terminal of the second capacitor CT2 is connected to ground GND.
The working principle of the radio frequency power amplifier is as follows:
the radio frequency power amplifier 100 is split into two parts, namely a first power amplifier 21 and a second power amplifier 22, by the first stage power amplifier 2; the second stage power amplifier 4 is also split into a third power amplifier 41 and a third power amplifier 42. The radio frequency signal is input from the input end RFin of the radio frequency power amplifier 100, split and coupled to the first power amplifier 21 and the second power amplifier 22 through the first transformer 1, coupled to the third power amplifier 41 and the fourth power amplifier 42 through the second transformer 3, and combined into one signal through the third transformer 5, and the one signal is fed from the output end RFout of the radio frequency power amplifier 100 to the external antenna for transmission. This structure allows the rf power amplifier 100 of the present invention to meet the requirements of high power and high linearity.
The input end of the primary coil of the first transformer 1 is connected to the ground GND after being connected in series with the first capacitor CT1, and the circuit structure enables the first capacitor CT1 and the primary coil of the first transformer 1 to form a resonator structure, so that a signal input to the first-stage power amplifier 2 resonates in a working frequency band, and therefore the radio frequency power amplifier 100 can meet the requirements of high power and high linearity, clutter can be suppressed, and the harmonic suppression effect of the radio frequency power amplifier 100 is good. Meanwhile, the second capacitor CT2 and the second transformer 3 resonate at a second-order frequency, i.e., a second-order harmonic 2F0, and the circuit structure enables the harmonic suppression effect of the radio frequency power amplifier 100 to be good.
In this embodiment, the first capacitor CT1 and the second capacitor CT2 are both parameter-adjustable capacitors. A user can accurately suppress the second order harmonic of the radio frequency power amplifier 100 by adjusting the parameters of the first capacitor CT1 and the parameters of the second capacitor CT2 according to actual needs, so that the harmonic suppression effect of the radio frequency power amplifier 100 is good.
Preferably, the first terminal of the second capacitor CT2 is connected to the position between the input terminal of the secondary winding of the second transformer 3 and the output terminal of the secondary winding of the second transformer 3. In this embodiment, the plurality of central tap ends of the secondary winding of the second transformer 3 are included, and the first end of the second capacitor CT2 is connected to one of the central tap ends. The circuit structure enables the second capacitor CT2 and the second transformer 3 to form a second-order harmonic 2F0 more effectively. Thereby making the harmonic suppression effect of the rf power amplifier 100 good.
The utility model also provides a chip. The chip includes the radio frequency power amplifier 100.
The utility model also provides electronic equipment. The electronic device comprises the radio frequency power amplifier 100.
Compared with the related art, the radio frequency power amplifier, the chip and the electronic equipment are divided into two parts of a first power amplifier and a second power amplifier through the first-stage power amplifier; simultaneously splitting the second-stage power amplifier into a third power amplifier and a fourth power amplifier; the output signal of the first-stage power amplifier is split and coupled to the first power amplifier and the second power amplifier through the first transformer, then the output signal of the first-stage power amplifier is coupled to the third power amplifier and the fourth power amplifier through the second transformer, and then the two paths of signals are combined into one path of signal to be output through the third transformer. The circuit structure enables the radio frequency power amplifier to meet the requirements of high power and high linearity. The first end of the primary coil of the first transformer is connected to the ground after being connected in series with the first capacitor, and the circuit structure enables the first capacitor and the primary coil inductor of the first transformer to form a resonator structure, so that a signal input to the first-stage power amplifier resonates in a working frequency band, the radio frequency power amplifier is favorable for meeting requirements of high power and high linearity, clutter is also favorably inhibited, and the harmonic suppression effect of the radio frequency power amplifier is good. Meanwhile, the second capacitor and the second transformer resonate at double frequency, namely second-order harmonic 2F0, and the circuit structure enables harmonic suppression effects of the radio frequency power amplifier, the chip and the electronic equipment to be good.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (6)
1. A radio frequency power amplifier is characterized by comprising a first transformer, a first-stage power amplifier, a second transformer, a second-stage power amplifier, a third transformer, a first capacitor and a second capacitor which are sequentially connected;
the first transformer is used for converting an input single-ended signal into two paths of differential signals and coupling the two paths of differential signals to the first-stage power amplifier;
the first-stage power amplifier is used for amplifying the two coupled differential signals and outputting two amplified differential signals;
the second transformer is used for coupling the two paths of amplified differential signals to the second-stage power amplifier;
the second-stage power amplifier is used for amplifying the two coupled amplified differential signals;
the third transformer is used for synthesizing the two amplified differential signals amplified by the second-stage power amplifier into a signal and outputting the signal;
the first capacitor is used for forming a resonator structure with the primary coil inductance of the first transformer;
the second capacitor is used for being in inductive resonance with a secondary coil of the second transformer at double frequency.
2. The radio frequency power amplifier of claim 1, wherein the first stage power amplifier comprises a first power amplifier and a second power amplifier; the second stage power amplifier comprises a third power amplifier and a fourth power amplifier;
a first end of a primary coil of the first transformer is used as an input end of the radio frequency power amplifier, and the first end of the primary coil of the first transformer is connected to the ground after being connected with the first capacitor in series;
a second end of the primary coil of the first transformer is connected to ground; a first end of a secondary coil of the first transformer is connected to an input end of the first power amplifier; a second end of the secondary coil of the first transformer is connected to an input end of the second power amplifier;
the output end of the first power amplifier is connected to the first end of the primary coil of the second transformer;
the output end of the second power amplifier is connected to the second end of the primary coil of the second transformer;
a first end of a secondary coil of the second transformer is connected to an input end of the third power amplifier; a second end of the secondary coil of the second transformer is connected to an input end of the fourth power amplifier;
an output terminal of the third power amplifier is connected to a first terminal of a primary coil of the third transformer;
an output end of the fourth power amplifier is connected to a second end of the primary coil of the third transformer;
a second end of the secondary coil of the third transformer is connected to ground; a first end of a secondary coil of the third transformer is used as an output end of the radio frequency power amplifier;
a first end of the second capacitor is connected to a central tap end of a secondary coil of the second transformer; the second end of the second capacitor is connected to the ground;
the second capacitor and the second transformer resonate at double frequency.
3. The radio frequency power amplifier of claim 2, wherein the first capacitor and the second capacitor are both parameter tunable capacitors.
4. The rf power amplifier of claim 2, wherein the first stage power amplifier and the second stage power amplifier are implemented using transistors.
5. A chip comprising the radio frequency power amplifier of any one of claims 1-4.
6. An electronic device, characterized in that the electronic device comprises the radio frequency power amplifier according to any of claims 1-4.
Priority Applications (2)
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CN202122739262.8U CN216390930U (en) | 2021-11-09 | 2021-11-09 | Radio frequency power amplifier, chip and electronic equipment |
PCT/CN2022/125455 WO2023082940A1 (en) | 2021-11-09 | 2022-10-14 | Radio frequency power amplifier, chip, and electronic device |
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CN202122739262.8U CN216390930U (en) | 2021-11-09 | 2021-11-09 | Radio frequency power amplifier, chip and electronic equipment |
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CN216390930U true CN216390930U (en) | 2022-04-26 |
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CN202122739262.8U Active CN216390930U (en) | 2021-11-09 | 2021-11-09 | Radio frequency power amplifier, chip and electronic equipment |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023082938A1 (en) * | 2021-11-09 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier, radio frequency chip, and wireless communication device |
WO2023082940A1 (en) * | 2021-11-09 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, chip, and electronic device |
WO2024051381A1 (en) * | 2022-09-05 | 2024-03-14 | 深圳飞骧科技股份有限公司 | Power amplifier with reconfigurable matching network and communication device |
WO2024060832A1 (en) * | 2022-09-20 | 2024-03-28 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, radio frequency chip, and wireless communication apparatus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117856749B (en) * | 2024-02-08 | 2024-06-28 | 北京巨束科技有限公司 | Power synthesis module and power amplifier |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN206332649U (en) * | 2016-12-23 | 2017-07-14 | 陕西烽火实业有限公司 | A kind of low pressure radio-frequency power amplifier |
US11005433B2 (en) * | 2018-02-12 | 2021-05-11 | Georgia Tech Research Corporation | Continuous-mode harmonically tuned power amplifier output networks and systems including same |
CN111431488B (en) * | 2020-05-13 | 2022-07-15 | 展讯通信(上海)有限公司 | Radio frequency power amplifier and communication equipment |
CN216390930U (en) * | 2021-11-09 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, chip and electronic equipment |
-
2021
- 2021-11-09 CN CN202122739262.8U patent/CN216390930U/en active Active
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2022
- 2022-10-14 WO PCT/CN2022/125455 patent/WO2023082940A1/en unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023082938A1 (en) * | 2021-11-09 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier, radio frequency chip, and wireless communication device |
WO2023082940A1 (en) * | 2021-11-09 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, chip, and electronic device |
WO2024051381A1 (en) * | 2022-09-05 | 2024-03-14 | 深圳飞骧科技股份有限公司 | Power amplifier with reconfigurable matching network and communication device |
WO2024060832A1 (en) * | 2022-09-20 | 2024-03-28 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, radio frequency chip, and wireless communication apparatus |
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