CN216390923U - Radio frequency power amplifier, radio frequency chip and wireless communication equipment - Google Patents
Radio frequency power amplifier, radio frequency chip and wireless communication equipment Download PDFInfo
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- CN216390923U CN216390923U CN202122734245.5U CN202122734245U CN216390923U CN 216390923 U CN216390923 U CN 216390923U CN 202122734245 U CN202122734245 U CN 202122734245U CN 216390923 U CN216390923 U CN 216390923U
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- power amplifier
- transformer
- radio frequency
- capacitor
- frequency power
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
Abstract
The embodiment of the utility model provides a radio frequency power amplifier, which comprises a first-stage power amplifier, a first transformer, a second-stage power amplifier, a second transformer and a capacitor, wherein the first-stage power amplifier, the first transformer, the second-stage power amplifier, the second transformer and the capacitor are sequentially connected; a first end of the capacitor is connected between a first end of the secondary winding of the first transformer and a second end of the secondary winding of the first transformer; the second end of the capacitor is connected to the ground; the capacitor and the first transformer resonate at double frequency. The embodiment of the utility model provides a radio frequency chip and wireless communication equipment.
Description
Technical Field
The utility model relates to the technical field of circuits, in particular to a radio frequency power amplifier, a radio frequency chip and wireless communication equipment.
Background
At present, the development of wireless communication technology, especially the application of 5G, is wider and wider. The 5GNR is a global 5G standard based on a brand-new air interface design of OFDM, and is also a very important cellular mobile technology foundation of the next generation, and the 5G technology can realize ultra-low time delay and high reliability. Due to the requirements of faster data transmission and high linearity, the rf power amplifier in the rf front-end module becomes an important component.
A related art radio frequency power amplifier generally includes a first stage power amplifier, a second power amplifier, and an output matching network, which are connected in sequence. Referring to fig. 1, fig. 1 is a schematic circuit diagram of a related art rf power amplifier. The output matching network comprises an inductor L1, a capacitor C1, an inductor L2 and a capacitor C2. The radio frequency signal is input from a radio frequency signal input end RFin, passes through two-stage power amplification of a first-stage power amplifier and a second-stage power amplifier, passes through an output matching network, and is fed from a radio frequency signal output end RFout to an external antenna to be transmitted.
However, the related art radio frequency power amplifier is a 4G technology. The main advantage of the 5G network is that the data transmission rate is much higher than that of the previous cellular network, up to 10Gbit/s, faster than that of the current wired internet, and 100 times faster than that of the previous 4G LTE cellular network. Another advantage is lower network delay (faster response time), below 1 millisecond, and 30-70 milliseconds for 4G. The rf power amplifier of the 4G LTE rf front-end module has not been able to meet the linearity requirement of 5G-NR.
Therefore, there is a need to provide a new rf power amplifier and related chip and device to solve the above problems.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the prior art, the utility model provides a radio frequency power amplifier, a radio frequency chip and wireless communication equipment with good harmonic suppression effect.
In order to solve the above technical problem, in a first aspect, an embodiment of the present invention provides a radio frequency power amplifier, where the radio frequency power amplifier includes a first-stage power amplifier, a first transformer, a second-stage power amplifier, a second transformer, and a capacitor, which are connected in sequence;
the second stage power amplifier comprises a first power amplifier and a second power amplifier;
the input end of the first-stage power amplifier is used as the input end of the radio frequency power amplifier;
the output end of the first stage power amplifier is connected to the first end of the primary coil of the first transformer;
a second end of the primary coil of the first transformer is connected to ground; a first end of a secondary coil of the first transformer is connected to an input end of the first power amplifier; a second end of the secondary coil of the first transformer is connected to an input end of the second power amplifier;
the output end of the first power amplifier is connected to the first end of the primary coil of the second transformer;
the output end of the second power amplifier is connected to the second end of the primary coil of the second transformer;
a second end of the secondary coil of the second transformer is connected to ground; a first end of a secondary coil of the second transformer is used as an output end of the radio frequency power amplifier;
a first end of the capacitor is connected between a first end of the secondary winding of the first transformer and a second end of the secondary winding of the first transformer; the second end of the capacitor is connected to the ground;
the capacitor and the first transformer resonate at double frequency.
Preferably, the capacitor is a parameter-adjustable capacitor.
Preferably, the first end of the capacitor is connected to the first end of the secondary coil of the first transformer and the second end of the secondary coil of the first transformer are adjustable in position.
Preferably, the first-stage power amplifier and the second-stage power amplifier are both implemented by transistors.
In a second aspect, an embodiment of the present invention provides a radio frequency chip, where the radio frequency chip includes the radio frequency power amplifier as described in any one of the above.
In a third aspect, embodiments of the present invention provide a wireless communication device, which includes the radio frequency power amplifier as described in any one of the above.
Compared with the prior art, the radio frequency power amplifier, the radio frequency chip and the wireless communication equipment are divided into two parts of a first power amplifier and a second power amplifier through the second-stage power amplifier; and splitting and coupling the output signal of the first-stage power amplifier to the first power amplifier and the second power amplifier through the first transformer, and outputting the output signal through the second transformer. The circuit structure enables the radio frequency power amplifier to meet the requirements of high power and high linearity. The capacitor and the first transformer resonate at double frequency, namely second harmonic 2F0, and the circuit structure enables harmonic suppression effects of the radio frequency power amplifier, the radio frequency chip and the wireless communication equipment to be good.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the utility model will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings, there is shown in the drawings,
fig. 1 is a schematic circuit diagram of a related art rf power amplifier;
fig. 2 is a schematic circuit diagram of the rf power amplifier of the present invention.
Detailed Description
The following detailed description of embodiments of the utility model refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the utility model. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
The embodiment of the utility model provides a radio frequency power amplifier 100.
Referring to fig. 2, fig. 2 is a schematic circuit diagram of the rf power amplifier 100 according to the present invention.
The radio frequency power amplifier 100 of the utility model comprises a first-stage power amplifier 1, a first transformer 2, a second-stage power amplifier 3, a second transformer 4 and a capacitor C which are connected in sequence. Wherein the second stage power amplifier 3 comprises a first power amplifier 31 and a second power amplifier 32.
In this embodiment, the first stage power amplifier 1 and the second stage power amplifier 3 are both implemented by transistors. The first-stage power amplifier 1 and the second-stage power amplifier 3 are formed by transistors, which is beneficial for integrating the radio-frequency power amplifier 100 in a chip, meets the 5G technical index and has good performance in the N40/N41 frequency band.
Specifically, the specific circuit structure of the rf power amplifier 100 of the present invention is:
the input terminal of the first stage power amplifier 1 is used as the input terminal RFin of the rf power amplifier 100.
The output terminal of the first stage power amplifier 1 is connected to the first terminal of the primary coil of the first transformer 2.
The second terminal of the primary coil of the first transformer 2 is connected to ground GND. A first end of the secondary winding of the first transformer 2 is connected to an input of the first power amplifier 31. A second terminal of the secondary winding of the first transformer 2 is connected to an input terminal of the second power amplifier 32.
The output terminal of the first power amplifier 31 is connected to a first terminal of the primary winding of the second transformer 4.
The output terminal of the second power amplifier 32 is connected to the second terminal of the primary coil of the second transformer 4.
A second terminal of the secondary winding of the second transformer 4 is connected to ground GND. A first end of the secondary winding of the second transformer 4 is used as an output terminal RFout of the rf power amplifier 100.
A first end of the capacitor C is connected between a first end of the secondary winding of the first transformer 2 and a second end of the secondary winding of the first transformer 2. The second end of the capacitor C is connected to ground GND.
The working principle of the radio frequency power amplifier is as follows:
the radio frequency power amplifier 100 is split into two parts, namely a first power amplifier 31 and a second power amplifier 32, by the second stage power amplifier 3; the output signal of the first stage power amplifier 1 is split and coupled to the first power amplifier 31 and the second power amplifier 32 by the first transformer 2, and the radio frequency signals output by the two parts of the second stage power amplifier 3 are combined into one signal by the second transformer 4 and output. The radio frequency signal is input from the input end RFin of the radio frequency power amplifier 100, amplified by the first stage power amplifier 1, coupled to the second stage power amplifier 3 by the first transformer 2, and finally combined into a single signal by the second transformer 4, the single signal is output from the two parts of the second stage power amplifier 3, and is sent to the output end RFout of the radio frequency power amplifier 100 and is fed to an external antenna for transmission. This structure allows the rf power amplifier 100 of the present invention to meet the requirements of high power and high linearity.
The capacitor C resonates with the first transformer 2 at a double frequency. Namely, the second-order harmonic 2F0, that is, the or circuit structure has a suppression effect on the second-order harmonic, and the circuit structure makes the harmonic suppression effect of the radio frequency power amplifier 100 good.
In this embodiment, the capacitor C is a parameter-adjustable capacitor. The user can be according to actual need, through adjusting the parameter of electric capacity C, right the second order harmonic of radio frequency power amplifier 100 carries out accurate suppression to make radio frequency power amplifier 100's harmonic suppression effectual.
Preferably, the first end of the capacitor C is connected to the first end of the secondary winding of the first transformer 2, and the position between the first end of the secondary winding of the first transformer 2 and the second end of the secondary winding of the first transformer is adjustable. The circuit structure enables the capacitor C and the first transformer 2 to form the second-order harmonic 2F0 better. Thereby making the harmonic suppression effect of the rf power amplifier 100 good.
In order to verify that the harmonic suppression effect of the radio frequency power amplifier 100 of the present invention is good, the simulation results of tables 1 and 2 are obtained by simulating the radio frequency power amplifier 100 under the conditions of Vcc 4.5v and N40/N41 frequency band:
please refer to table 1 below:
table 1, simulation results of 1db compression point power please refer to table 2 below:
table 2, simulation results of 35.5dBm gain output power
From the data of tables 1 and 2 above, one can see: the rf power amplifier 100 may achieve a compression point power of about 1dB of about 35.5dBm, which is about 2.5dB greater than conventional architectures, and may achieve better second-order harmonic performance.
The structure is characterized in that a carrier input matching network 2 is arranged in front of an input end of a carrier power amplifier 3, and a peak input matching network 4 is arranged in front of an input end of a peak power amplifier 5. The arrangement enables uniform or non-uniform power distribution of input power to be realized through the impedance value of the carrier input matching network 2 and the impedance value of the peak input matching network 4, so that a power divider with a large size in the related art can be replaced, and the layout area of the radio-frequency power amplifier 100 is small and is easy to integrate on a chip of a GaAs HBT process.
The utility model also provides a radio frequency chip. The radio frequency chip includes the radio frequency power amplifier 100.
The utility model also provides wireless communication equipment. The wireless communication device includes the radio frequency power amplifier 100.
Compared with the prior art, the radio frequency power amplifier, the radio frequency chip and the wireless communication equipment are divided into two parts of a first power amplifier and a second power amplifier through the second-stage power amplifier; and splitting and coupling the output signal of the first-stage power amplifier to the first power amplifier and the second power amplifier through the first transformer, and outputting the output signal through the second transformer. The circuit structure enables the radio frequency power amplifier to meet the requirements of high power and high linearity. The capacitor and the first transformer resonate at double frequency, namely second harmonic 2F0, and the circuit structure enables harmonic suppression effects of the radio frequency power amplifier, the radio frequency chip and the wireless communication equipment to be good.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (6)
1. A radio frequency power amplifier is characterized by comprising a first-stage power amplifier, a first transformer, a second-stage power amplifier, a second transformer and a capacitor which are sequentially connected;
the second stage power amplifier comprises a first power amplifier and a second power amplifier;
the input end of the first-stage power amplifier is used as the input end of the radio frequency power amplifier;
the output end of the first stage power amplifier is connected to the first end of the primary coil of the first transformer;
a second end of the primary coil of the first transformer is connected to ground; a first end of a secondary coil of the first transformer is connected to an input end of the first power amplifier; a second end of the secondary coil of the first transformer is connected to an input end of the second power amplifier;
the output end of the first power amplifier is connected to the first end of the primary coil of the second transformer;
the output end of the second power amplifier is connected to the second end of the primary coil of the second transformer;
a second end of the secondary coil of the second transformer is connected to ground; a first end of a secondary coil of the second transformer is used as an output end of the radio frequency power amplifier;
a first end of the capacitor is connected between a first end of the secondary winding of the first transformer and a second end of the secondary winding of the first transformer; the second end of the capacitor is connected to the ground;
the capacitor and the first transformer resonate at double frequency.
2. The radio frequency power amplifier of claim 1, wherein the capacitance is a parametrically tunable capacitance.
3. The radio frequency power amplifier of claim 1, wherein a position between a first end of the capacitor connected to the secondary winding of the first transformer and a second end of the secondary winding of the first transformer is adjustable.
4. The rf power amplifier of claim 1, wherein the first stage power amplifier and the second stage power amplifier are implemented using transistors.
5. A radio-frequency chip, characterized in that the radio-frequency chip comprises the radio-frequency power amplifier according to any one of claims 1 to 4.
6. A wireless communication device, characterized in that it comprises a radio frequency power amplifier according to any of claims 1-4.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122734245.5U CN216390923U (en) | 2021-11-09 | 2021-11-09 | Radio frequency power amplifier, radio frequency chip and wireless communication equipment |
| PCT/CN2022/125451 WO2023082938A1 (en) | 2021-11-09 | 2022-10-14 | Radio frequency amplifier, radio frequency chip, and wireless communication device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122734245.5U CN216390923U (en) | 2021-11-09 | 2021-11-09 | Radio frequency power amplifier, radio frequency chip and wireless communication equipment |
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| Publication Number | Publication Date |
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| CN216390923U true CN216390923U (en) | 2022-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122734245.5U Active CN216390923U (en) | 2021-11-09 | 2021-11-09 | Radio frequency power amplifier, radio frequency chip and wireless communication equipment |
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| Country | Link |
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| CN (1) | CN216390923U (en) |
| WO (1) | WO2023082938A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023082938A1 (en) * | 2021-11-09 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier, radio frequency chip, and wireless communication device |
| WO2024060832A1 (en) * | 2022-09-20 | 2024-03-28 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, radio frequency chip, and wireless communication apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015212220A1 (en) * | 2015-06-30 | 2017-01-05 | TRUMPF Hüttinger GmbH + Co. KG | RF amplifier arrangement |
| US11005433B2 (en) * | 2018-02-12 | 2021-05-11 | Georgia Tech Research Corporation | Continuous-mode harmonically tuned power amplifier output networks and systems including same |
| JP7275624B2 (en) * | 2019-02-13 | 2023-05-18 | 株式会社デンソー | Frequency band variable high frequency amplifier |
| CN110233599A (en) * | 2019-04-29 | 2019-09-13 | 深圳市中微半导体有限公司 | E-Band microwave F power-like amplifier based on CMOS |
| CN110401420B (en) * | 2019-07-04 | 2022-12-13 | 东南大学 | Millimeter wave frequency multiplier circuit based on active millimeter wave frequency multiplier base bias voltage and fundamental wave input signal power amplitude relation |
| CN216390918U (en) * | 2021-11-05 | 2022-04-26 | 深圳飞骧科技股份有限公司 | HBT high-efficiency radio frequency power amplifier |
| CN216390930U (en) * | 2021-11-09 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, chip and electronic equipment |
| CN216390923U (en) * | 2021-11-09 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, radio frequency chip and wireless communication equipment |
-
2021
- 2021-11-09 CN CN202122734245.5U patent/CN216390923U/en active Active
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2022
- 2022-10-14 WO PCT/CN2022/125451 patent/WO2023082938A1/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023082938A1 (en) * | 2021-11-09 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier, radio frequency chip, and wireless communication device |
| WO2024060832A1 (en) * | 2022-09-20 | 2024-03-28 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, radio frequency chip, and wireless communication apparatus |
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| Publication number | Publication date |
|---|---|
| WO2023082938A1 (en) | 2023-05-19 |
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