CN216390918U - HBT high-efficiency radio frequency power amplifier - Google Patents
HBT high-efficiency radio frequency power amplifier Download PDFInfo
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- CN216390918U CN216390918U CN202122706263.2U CN202122706263U CN216390918U CN 216390918 U CN216390918 U CN 216390918U CN 202122706263 U CN202122706263 U CN 202122706263U CN 216390918 U CN216390918 U CN 216390918U
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
Abstract
The utility model provides an HBT (heterojunction bipolar transistor) high-efficiency radio frequency power amplifier, which comprises an input end, a driving power tube and a first spiral line balun, wherein the first spiral line balun is used for converting a single-ended signal of the driving power tube into a differential signal; the output power tube unit comprises at least two push-pull power tubes which are connected in parallel to form a push-pull mode and used for outputting the differential signals, and a second spiral balun which is of a center tap structure and used for converting the differential signals of the output power tube unit into single-ended signals; a parallel resonant circuit having an input connected to a first end of the secondary winding of the second helical balun; an output connected to an output of the parallel resonant circuit. Compared with the prior art, the HBT high-efficiency radio frequency power amplifier has high output efficiency and good harmonic suppression effect.
Description
Technical Field
The utility model relates to the technical field of wireless communication radio frequency chip design, in particular to a high-efficiency HBT radio frequency power amplifier.
Background
The radio frequency power amplifier is located at the final stage of the wireless communication transmitter and is the most important radio frequency device in the wireless communication system. The radio frequency power amplifier is used for driving the antenna so as to improve the radiation power factor of the antenna and transmit the wireless communication signals for a certain distance. The performance of the rf power amplifier greatly affects the performance of the entire mobile wireless communication device, which not only determines the quality and propagation distance of the communication signal, but also directly affects the talk time of the mobile terminal, especially for battery-powered mobile wireless communication systems, because the energy consumed by the rf power amplifier accounts for a considerable proportion of the energy consumed by the entire wireless communication device. Therefore, it is important to design a high efficiency rf power amplifier.
On the other hand, when the radio frequency power amplifier works in a large signal mode, the output signal of the radio frequency power tube contains a large output harmonic component, and particularly the amplitude of a second-order third-order harmonic component is the largest. Harmonic components in the output signal may interfere with signals of other channels. The radio frequency power amplifier must be designed to effectively suppress harmonic components in the output signal.
A Heterojunction Bipolar Transistor (HBT) common emitter amplifier circuit with a single-ended structure is a common way to design a radio frequency power amplifier in the related art. The circuit has the advantages of simple structure, easy design, convenient debugging and the like. However, when viewed from the collector end of the output power tube to the load end, both the bond wire inductance and the parasitic parameters of the interconnection wires become part of the second harmonic trap circuit, and the second harmonic trap circuit is effective only for a specific load to realize a short circuit for a specific operating frequency. When the load impedance changes, the second harmonic trap circuit is no longer short-circuited at the second harmonic frequency, and a certain impedance value is presented, which affects the improvement of the efficiency. On the other hand, the second harmonic trap circuit has a large influence on the fundamental wave impedance, and cannot independently adjust the second harmonic impedance, and often the second harmonic impedance is adjusted to the minimum impedance value, and the fundamental wave impedance also deviates from the optimal value, so that the fundamental wave output power is reduced, and the linearity is deteriorated.
Therefore, there is a need to provide a new HBT high efficiency rf power amplifier to solve the above technical problems.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the related technologies, the utility model provides the HBT high-efficiency radio frequency power amplifier with high output efficiency and good harmonic suppression effect.
In order to solve the above technical problem, an embodiment of the present invention provides an HBT high efficiency rf power amplifier, including:
an input end;
the base electrode of the driving power tube is connected to the input end, and the emitter electrode of the driving power tube is connected to the ground;
the first spiral balun is of a center tap structure and is used for converting a single-ended signal of the driving power tube into a differential signal; a first end of a primary coil of the first spiral balun is connected to a power supply voltage, and a second end of the primary coil of the first spiral balun is connected to a collector electrode of the driving power tube;
the output power tube unit comprises at least two push-pull power tubes which are mutually connected in parallel to form a push-pull mode, is used for outputting the differential signal and comprises a first push-pull power tube and a second push-pull power tube; the base electrode of the first push-pull power tube is connected to the first end of the secondary coil of the first spiral balun, and the emitter electrode of the first push-pull power tube is connected to the ground; the base electrode of the second push-pull power tube is connected to the second end of the secondary coil of the first spiral balun, and the emitter electrode of the second push-pull power tube is connected to the ground;
the second spiral balun is of a center tap structure and is used for converting the differential signal of the output power tube unit into a single-ended signal; a first end of a primary coil of the second spiral balun is connected to a collector of the first push-pull power tube, and a second end of the primary coil of the second spiral balun is connected to a collector of the second push-pull power tube; a first end of the secondary coil of the second spiral balun is used as an output, and a second end of the secondary coil of the second spiral balun is connected to the ground;
a parallel resonant circuit having an input connected to a first end of the secondary winding of the second helical balun;
an output connected to an output of the parallel resonant circuit.
Preferably, the driving power transistor, the first push-pull power transistor, and the second push-pull power transistor are all HBT transistors with a single-ended common-emitter amplification structure.
Preferably, the HBT high-efficiency radio frequency power amplifier further comprises a second capacitor, a first end of the second capacitor is connected to a center tap end of the secondary coil of the first spiral balun, and a second end of the second capacitor is connected to ground; the second capacitor is in series resonance with the primary coil of the first helical balun at a second harmonic frequency.
Preferably, the HBT high-efficiency radio frequency power amplifier further comprises a first capacitor connected in parallel with the primary coil of the first helical balun, and a third capacitor connected in parallel with the secondary coil of the first helical balun; the first capacitor is resonant with the primary coil of the first helical balun at a fundamental frequency, and the third capacitor is resonant with the secondary coil of the first helical balun at a fundamental frequency.
Preferably, the second helical balun is arranged on the substrate.
Preferably, the HBT high-efficiency radio-frequency power amplifier further includes a fifth capacitor, a first end of the fifth capacitor is connected to the central tap end of the primary coil of the second spiral balun and the power supply voltage, respectively, and a second end of the fifth capacitor is connected to ground; the fifth capacitor is in series resonance with the primary coil of the second helical balun at a second harmonic frequency.
Preferably, the HBT high-efficiency radio frequency power amplifier further comprises a fourth capacitor and a sixth capacitor, the fourth capacitor is connected in parallel with the primary coil of the second spiral balun, and the sixth capacitor is connected in parallel with the secondary coil of the second spiral balun; the fourth capacitor is resonant with the primary coil of the second helical balun at a fundamental frequency, and the sixth capacitor is resonant with the secondary coil of the second helical balun at a fundamental frequency.
Preferably, the parallel resonant circuit includes a resonant inductor and a resonant capacitor connected in parallel with each other, and the parallel resonant circuit resonates at a third harmonic frequency.
Preferably, the HBT high-efficiency radio frequency power amplifier further comprises a first ballast resistor, a first ballast capacitor, a second ballast resistor, and a second ballast capacitor; a first end of the first ballast resistor is connected to a bias voltage, and a second end of the first ballast resistor is connected to a base electrode of the first push-pull power tube; a first end of the first ballast capacitor is connected to a first end of a secondary coil of the first spiral balun, and a second end of the first ballast capacitor is connected to a base electrode of the first push-pull power tube; a first end of the second ballast resistor is connected to the bias voltage, and a second end of the second ballast resistor is connected to a base electrode of the second push-pull power tube; the first end of the second ballast capacitor is connected to the second end of the secondary coil of the first spiral balun, and the second end of the second ballast capacitor is connected to the base of the second push-pull power tube.
Preferably, the first ballasting capacitor, the second ballasting capacitor, the third capacitor, and the secondary coil of the first spiral balun are all resonant at a fundamental frequency.
Compared with the prior art, the HBT high-efficiency radio frequency power amplifier comprises a driving power tube and a first spiral line balun, wherein the first spiral line balun is used for converting a single-ended signal of the driving power tube into a differential signal; the output power tube unit comprises at least two push-pull power tubes which are mutually connected in parallel to form a push-pull mode and is used for outputting the differential signal; the second spiral balun is used for converting the differential signal of the output power tube unit into a single-ended signal; a parallel resonant circuit having an input connected to a first end of the secondary winding of the second helical balun. Therefore, the driving power tube still adopts a single-end common emitter amplification structure, and the output power tube unit adopts a push-pull type power tube. The conversion from single end to difference is completed between the driving power tube and the output power tube unit by adopting the first spiral line balun with the center tap, the resonance frequency is easy to adjust through the capacitor, the second harmonic impedance is ensured to be kept constant under the condition of load impedance change, the transmission capability of fundamental wave signals is enhanced, and the second harmonic impedance to the ground is reduced; the output end of the output power tube unit also adopts a second spiral line balun with a center tap to complete the conversion from difference to single end, the converted single-end signal passes through the parallel resonance circuit and then outputs a power signal, and impedance is open-circuit in terms of third harmonic, so that the optimal power transmission of fundamental wave signals is realized, and the efficiency is higher.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the utility model will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings:
fig. 1 is a circuit configuration diagram of a HBT radio frequency power amplifier of the related art;
fig. 2 is a simplified equivalent circuit diagram of a common-emitter HBT transistor of an HBT radio-frequency power amplifier according to an embodiment of the present invention;
fig. 3 is a circuit diagram of an implementation of an HBT high-efficiency rf power amplifier according to an embodiment of the present invention;
fig. 4 is a circuit diagram of another push-pull power transistor unit of the HBT high-efficiency rf power amplifier according to the embodiment of the present invention;
fig. 5 is a circuit structure diagram of a second implementation manner of the HBT high-efficiency rf power amplifier according to the embodiment of the present invention;
fig. 6 is a three-circuit structure diagram of an implementation manner of the HBT high-efficiency rf power amplifier according to the embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the utility model refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the utility model. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the utility model may be practiced. Directional phrases used herein, such as, for example, upper, lower, front, rear, left, right, inner, outer, lateral, and the like, refer only to the orientation of the appended drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Referring to fig. 1, the HBT radio frequency power amplifier with high efficiency requires low turn-on voltage and high breakdown voltage of the adopted power tube, and has high efficiency and linearity when operating in a state close to saturation. Due to the characteristics of high efficiency, large gain, good linear characteristic, high power density, small leakage current, power supply by only a single power supply and the like of a Heterojunction Bipolar Transistor (HBT) device, the HBT is very suitable for the design of a radio frequency power amplifier. In engineering application, the GaAs HBT and the SiGe HBT are two most widely used power devices, and the manufacturing cost advantage is obvious. As shown in fig. 1, the HBT common-emitter amplifier circuit with single-ended structure is a common way to design HBT radio-frequency power amplifiers. The circuit has the advantages of simple structure, easy design, convenient debugging and the like. In order to improve the efficiency of the HBT radio frequency power amplifier, a common way is to connect a second-order harmonic trap circuit (Cs1, Ls1, Cs2, Ls2) in parallel at the input and output ends of the radio frequency power tube, and shape the output voltage and current waveforms by adjusting the second harmonic impedance of the collector end and the base end of the output power tube, so that the overlapping part of the output voltage wave and the output current wave is reduced as much as possible, thereby improving the efficiency. However, when viewed from the collector end of the output power tube to the load end, both the bond wire inductance lparastic and the parasitic parameters of the interconnection line become part of the second harmonic trap circuit, and the second harmonic trap circuit is effective only for a specific load to realize a short circuit for a specific operating frequency. When the load impedance changes, the second harmonic trap circuit is no longer short-circuited at the second harmonic frequency, and a certain impedance value is presented, which affects the improvement of the efficiency. On the other hand, the second harmonic trap circuit has a large influence on the fundamental wave impedance, and cannot independently adjust the second harmonic impedance, and often the second harmonic impedance is adjusted to the minimum impedance value, and the fundamental wave impedance also deviates from the optimal value, so that the fundamental wave output power is reduced, and the linearity is deteriorated.
The HBT rf power amplifier is designed by first performing impedance matching at the fundamental frequency, but optimizing the impedance matching of the harmonics is critical to obtain the best performance of the power tube. The adjustment of the harmonic component has a great influence on the operating state of the power amplifier. Without harmonic regulation, the designed HBT radio frequency power amplifier often does not achieve the expected performance, and especially the operating efficiency generates large fluctuation. The data of harmonic regulation is critical to designing an HBT radio frequency power amplifier which meets the expected performance. When designing a radio frequency power amplifier using the HBT process, a common emitter circuit structure is often used, which simplifies an equivalent circuit model as shown in fig. 2, and the nonlinearity of the HBT output power is caused by the nonlinear resistance of the base and the emitter. Optimizing current I in HBT input equivalent diode for improving efficiencybedIs very effective in terms of the amplitude and phase of the second harmonic component. Since in most applications the input and output of the HBT radio frequency power amplifier are required to be single ended.
In order to solve the above problems, the present invention provides an HBT high efficiency rf power amplifier, whose design circuit principle is shown in fig. 3, the driving power transistor (Q0) of the embodiment of the present invention still adopts a single-ended common emitter amplifying structure, and the output power transistor units (Q1, Q2) adopt push-pull type push-pull power transistors. The drive power tube (Q0) and the output power tube units (Q1, Q2) adopt the center-tapped spiral balun to complete the conversion from single end to difference, the output end of the output power tube also adopts the center-tapped spiral balun to complete the conversion from difference to single end, and the converted single-end signal passes through the LC parallel resonant circuit and then outputs a power signal to drive the load antenna.
Specifically, the HBT high efficiency rf power amplifier 100 includes: the high-voltage power supply comprises an input end RFin, a driving power tube Q0, a first spiral Balun1, an output power tube unit 1, a second spiral Balun2, a parallel resonant circuit and an output end RFout.
The base of the driving power tube Q0 is connected to the input terminal RFin, and the emitter of the driving power tube Q0 is connected to the ground. Preferably, an input matching circuit, such as the input matching circuit Cb0, is connected in series between the base of the driving power transistor Q0 and the input terminal RFin, so as to implement input impedance matching.
The first spiral Balun1 is in a center-tapped structure and is used for converting a single-ended signal of the driving power tube Q0 into a differential signal. A first end of the primary coil Lp1 of the first spiral Balun1 is connected to a power supply voltage Vcc, and a second end of the primary coil Lp1 of the first spiral Balun1 is connected to a collector of the driving power tube Q0.
The output power tube unit 1 includes at least two push-pull power tubes connected in parallel to form a push-pull form, and is configured to output the differential signal. In the present embodiment, the output power transistor unit 1 includes a first push-pull power transistor Q1 and a second push-pull power transistor Q2 that are connected in parallel to each other to form a push-pull type. Of course, more push-pull power tubes can be connected in parallel to form the power amplifier.
The base of the first push-pull power tube Q1 is connected to the first end of the secondary coil Ls1 of the first spiral Balun1, and the emitter of the first push-pull power tube Q1 is connected to the ground.
The base of the second push-pull power tube Q2 is connected to the second end of the secondary coil Ls1 of the first spiral Balun1, and the emitter of the second push-pull power tube Q2 is connected to the ground.
The second spiral Balun2 is in a center-tapped structure and is used for converting the differential signal of the output power tube unit into a single-ended signal. A first end of a primary coil Lp2 of the second spiral Balun2 is connected to a collector of the first push-pull power tube Q1, and a second end of a primary coil Lp2 of the second spiral Balun2 is connected to a collector of the second push-pull power tube Q2; a first end of the secondary coil Ls2 of the second helical Balun2 is used as an output, and a second end of the secondary coil Ls2 of the second helical Balun2 is connected to ground.
The input of the parallel resonant circuit is connected to a first end of a secondary coil Ls2 of the second helical Balun 2; the output terminal RFout is connected to the output of the parallel resonant circuit.
In this embodiment, the driving power transistor Q0, the first push-pull power transistor Q1, and the second push-pull power transistor Q2 are all HBT transistors having a single-ended common emitter amplifier structure.
The push-pull type output power tube unit 1 generates the same-phase even order harmonic (common mode signal) and the opposite-phase odd order harmonic (differential mode signal), and the input end and the output end of the output power tube unit 1 both adopt the spiral balun with a central tap. The fundamental wave and the second harmonic are in an orthogonal relation and are independent of each other, and ideally, after the impedance of the fundamental wave is adjusted to an optimal value, the impedance of the second harmonic is adjusted, and the impedance of the fundamental wave cannot be influenced.
Preferably, the HBT high-efficiency radio frequency power amplifier 100 further comprises a second capacitor C2, a first terminal of the second capacitor C2 is connected to a central tap terminal of the secondary coil Ls1 of the first helical Balun1, and a second terminal of the second capacitor C2 is connected to ground; the second capacitor C2 is in series resonance with the primary coil Lp1 of the first helical Balun1 at the second harmonic frequency.
The push-pull type output power tube unit 1 generates the same-phase even order harmonic (common mode signal) and the opposite-phase odd order harmonic (differential mode signal), and the input end and the output end of the output power tube unit 1 both adopt the spiral balun with a central tap. The fundamental wave and the second harmonic are in an orthogonal relation and are independent of each other, and ideally, after the impedance of the fundamental wave is adjusted to an optimal value, the impedance of the second harmonic is adjusted, and the impedance of the fundamental wave cannot be influenced.
The embodiment adopts the on-chip first spiral Balun1 in the form of a center tap, and the Balun in the form has the characteristics of small occupied chip area and easiness in adjusting the resonant frequency through capacitance. The primary coil Lp1 and the secondary coil Ls1 of the first spiral Balun1 realize signal transmission through magnetic field coupling. The common mode signal cannot be coupled from the primary coil Lp1 to the secondary coil Ls1, while the differential mode signal can be coupled from the primary coil Lp1 to the secondary coil Ls 1. Ideally, the first spiral Balun1 at the center tap would have all the signal coupled to secondary Ls1 under differential signal excitation conditions, and the center tap end would have no signal. This ensures that the second harmonic impedance remains constant under varying load impedance conditions. In practical application, the primary coil Lp1 and the secondary coil Ls1 are not completely coupled (the coupling coefficient K is less than 1), the inductance value of the coil is also a finite value, the conductivity of the spiral line is a finite value, a parasitic resistance and a parasitic capacitance exist, and the coils are coupled with each other through the substrate. This results in a common mode signal at the center tap. The method for eliminating the second harmonic common mode signal is to form series resonance with the common mode inductance at the center tap end series capacitor C2 of the secondary coil Ls1, so as to reduce the second harmonic impedance to the ground.
In this embodiment, the HBT high efficiency rf power amplifier 100 further includes a first capacitor C1 and a third capacitor C3. The first capacitor C1 is connected in parallel with the primary coil Lp1 of the first spiral Balun1, and the third capacitor C2 is connected in parallel with the secondary coil Ls1 of the first spiral Balun 1. The first capacitor C1 resonates with the primary coil Lp1 of the first helical Balun1 at a fundamental frequency, and the third capacitor C3 resonates with the secondary coil Ls1 of the first helical Balun1 at the fundamental frequency.
The coupling from the primary coil Lp1 to the secondary coil Ls1 of the first spiral Balun1 is also non-ideal for differential mode signals, which will increase the transmission loss of the differential mode signal. The coupling from the primary coil Lp1 to the secondary coil Ls1 of the first spiral Balun1 is also non-ideal for differential mode signals, which will increase the transmission loss of the differential mode signal. In order to compensate for the loss of the differential mode signal, a first capacitor C1 and a third capacitor C3 are respectively connected in parallel to the end from the primary coil Lp1 to the end from the secondary coil Ls1 of the first spiral Balun 1. The first capacitor C1 and the primary coil Lp1, and the third capacitor C3 and the secondary coil Ls1 are all in parallel resonance at the fundamental frequency, and the transmission capacity of the fundamental wave signal is enhanced.
In this embodiment, the second spiral Balun2 is formed on the substrate. This is because the metal trace on the substrate has a higher thickness, so that an inductor with a higher Q value can be obtained, and signal transmission insertion loss is reduced.
The HBT high-efficiency radio frequency power amplifier 100 further comprises a fourth capacitor C4 and a sixth capacitor C6, wherein the fourth capacitor C4 is connected in parallel with the primary coil Lp2 of the second helical Balun2, and the sixth capacitor C6 is connected in parallel with the secondary coil Ls2 of the second helical Balun 2.
The fourth capacitor C4 resonates with the primary coil Lp2 of the second helical Balun2 at the fundamental frequency, and the sixth capacitor C6 resonates with the secondary coil Ls2 of the second helical Balun2 at the fundamental frequency, so as to realize the optimal power transfer of the fundamental signal.
The HBT high-efficiency radio frequency power amplifier 100 further comprises a fifth capacitor C5, a first terminal of the fifth capacitor C5 is connected to the central tap terminal of the primary coil Lp2 of the second helical Balun2 and the power supply voltage Vcc, respectively, and a second terminal of the fifth capacitor C5 is connected to ground. The fifth capacitor C5 is in series resonance with the primary coil Lp2 of the second helical Balun2 at the second harmonic frequency. Thus, the collector terminals of the first push-pull power transistor Q1 and the second push-pull power transistor Q2 see a lower second harmonic impedance.
The parallel resonant circuit comprises a resonant inductor Ltk and a resonant capacitor Ctk which are mutually connected in parallel, and the parallel resonant circuit resonates at the third harmonic frequency. The secondary coil Ls2 of the second spiral Balun2 is connected with a parallel resonant circuit (Tank circuit) composed of a resonant capacitor Ctk and a resonant inductor Ltk, and then drives an antenna load. The resonant frequency of the Tank circuit is third harmonic, and ideally, the impedance is open circuit for the third harmonic. The wave forms of the shaped voltage and the shaped current are closer to those of an F-type power amplifier, and the efficiency is higher.
In order to achieve higher power output, the first push-pull power transistor Q1 and the second push-pull power transistor Q2 are usually formed by connecting a plurality of HBT transistors in parallel. Since the HBT has the characteristic that the current increases with the temperature, when a plurality of HBT transistors are connected in parallel, in order to prevent a certain transistor from thermal collapse, in this embodiment, a Ballast Resistor (Ballast Resistor) is connected to each HBT transistor base bias circuit, and a capacitor is connected in series to the base rf signal path, so as to implement the isolation of the dc signal. An output power unit formed by connecting a plurality of HBT tubes including ballast resistors in parallel is shown in FIG. 4.
When the first push-pull power transistor Q1 and the second push-pull power transistor Q2 in the HBT high-efficiency rf power amplifier 100 of the present invention adopt the output power unit with such a structure, as shown in fig. 5: the HBT high efficiency rf power amplifier 100 further comprises a first ballast resistor Rb1, a first ballast capacitor Cb1, a second ballast resistor Rb2 and a second ballast capacitor Cb 2. A first terminal of the first ballast resistor Rb1 is connected to the bias voltage Vbias, and a second terminal of the first ballast resistor Rb1 is connected to the base of the first push-pull power transistor Q1. A first terminal of the first ballast capacitor Cb1 is connected to a first terminal of the secondary coil Ls1 of the first spiral Balun1, and a second terminal of the first ballast capacitor Cb1 is connected to the base of the first push-pull power transistor Q1.
A first terminal of the second ballast resistor Rb2 is connected to the bias voltage Vbias, and a second terminal of the second ballast resistor Rb2 is connected to the base of the second push-pull power tube Q2; a first terminal of the second ballast capacitor Cb2 is connected to the second terminal of the secondary coil Ls1 of the first spiral Balun1, and a second terminal of the second ballast capacitor Cb2 is connected to the base of the second push-pull power transistor Q2.
In this embodiment, the first ballast capacitor Cb1, the second ballast capacitor Cb2, the third capacitor C3, and the secondary coil Ls1 of the first spiral Balun1 all resonate at a fundamental frequency, so as to achieve good transmission of a fundamental signal.
Of course, in other embodiments, the third capacitor C3 may not be used by properly designing the first helical Balun1 in some operating frequency bands, and the embodiment is shown in fig. 6, which is basically the same as the embodiment shown in fig. 5, and the third capacitor C3 is omitted only by properly designing the first helical Balun 1.
Compared with the prior art, the HBT high-efficiency radio frequency power amplifier comprises a driving power tube and a first spiral line balun, wherein the first spiral line balun is used for converting a single-ended signal of the driving power tube into a differential signal; the output power tube unit comprises at least two push-pull power tubes which are mutually connected in parallel to form a push-pull mode and is used for outputting the differential signal; the second spiral balun is used for converting the differential signal of the output power tube unit into a single-ended signal; a parallel resonant circuit having an input connected to a first end of the secondary winding of the second helical balun. Therefore, the driving power tube still adopts a single-end common emitter amplification structure, and the output power tube unit adopts a push-pull type power tube. The conversion from single end to difference is completed between the driving power tube and the output power tube unit by adopting the first spiral line balun with the center tap, the resonance frequency is easy to adjust through the capacitor, the second harmonic impedance is ensured to be kept constant under the condition of load impedance change, the transmission capability of fundamental wave signals is enhanced, and the second harmonic impedance to the ground is reduced; the output end of the output power tube unit also adopts a second spiral line balun with a center tap to complete the conversion from difference to single end, the converted single-end signal passes through the parallel resonance circuit and then outputs a power signal, and impedance is open-circuit in terms of third harmonic, so that the optimal power transmission of fundamental wave signals is realized, and the efficiency is higher.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (10)
1. An HBT high efficiency radio frequency power amplifier, comprising,
an input end;
the base electrode of the driving power tube is connected to the input end, and the emitter electrode of the driving power tube is connected to the ground;
the first spiral balun is of a center tap structure and is used for converting a single-ended signal of the driving power tube into a differential signal; a first end of a primary coil of the first spiral balun is connected to a power supply voltage, and a second end of the primary coil of the first spiral balun is connected to a collector electrode of the driving power tube;
the output power tube unit comprises at least two push-pull power tubes which are mutually connected in parallel to form a push-pull mode, is used for outputting the differential signal and comprises a first push-pull power tube and a second push-pull power tube; the base electrode of the first push-pull power tube is connected to the first end of the secondary coil of the first spiral balun, and the emitter electrode of the first push-pull power tube is connected to the ground; the base electrode of the second push-pull power tube is connected to the second end of the secondary coil of the first spiral balun, and the emitter electrode of the second push-pull power tube is connected to the ground;
the second spiral balun is of a center tap structure and is used for converting the differential signal of the output power tube unit into a single-ended signal; a first end of a primary coil of the second spiral balun is connected to a collector of the first push-pull power tube, and a second end of the primary coil of the second spiral balun is connected to a collector of the second push-pull power tube; a first end of the secondary coil of the second spiral balun is used as an output, and a second end of the secondary coil of the second spiral balun is connected to the ground;
a parallel resonant circuit having an input connected to a first end of the secondary winding of the second helical balun;
an output connected to an output of the parallel resonant circuit.
2. The HBT high efficiency radio frequency power amplifier according to claim 1, wherein said drive power transistor, said first push-pull power transistor and said second push-pull power transistor are HBT transistors of single-ended common emitter amplification structure.
3. The HBT high efficiency radio frequency power amplifier according to claim 1, further comprising a second capacitor having a first terminal connected to a center tap of the secondary of said first helical balun and a second terminal connected to ground; the second capacitor is in series resonance with the primary coil of the first helical balun at a second harmonic frequency.
4. The HBT high efficiency radio frequency power amplifier of claim 3, further comprising a first capacitor connected in parallel with the primary winding of the first helical balun and a third capacitor connected in parallel with the secondary winding of the first helical balun; the first capacitor is resonant with the primary coil of the first helical balun at a fundamental frequency, and the third capacitor is resonant with the secondary coil of the first helical balun at a fundamental frequency.
5. An HBT high efficiency radio frequency power amplifier according to claim 1, wherein said second helical balun design is on a substrate.
6. The HBT high efficiency radio frequency power amplifier according to claim 5, further comprising a fifth capacitor having a first terminal connected to the power supply voltage and the center tap terminal of the primary winding of the second helical balun, respectively, and a second terminal connected to ground; the fifth capacitor is in series resonance with the primary coil of the second helical balun at a second harmonic frequency.
7. The HBT high efficiency radio frequency power amplifier according to claim 6, further comprising a fourth capacitance in parallel with the primary winding of said second helical balun and a sixth capacitance in parallel with the secondary winding of said second helical balun; the fourth capacitor is resonant with the primary coil of the second helical balun at a fundamental frequency, and the sixth capacitor is resonant with the secondary coil of the second helical balun at a fundamental frequency.
8. An HBT high efficiency radio frequency power amplifier according to claim 1 wherein said parallel resonant circuit comprises a resonant inductor and a resonant capacitor connected in parallel with each other, said parallel resonant circuit being resonant at a third harmonic frequency.
9. The HBT high efficiency radio frequency power amplifier of claim 4, further comprising a first ballast resistor, a first ballast capacitor, a second ballast resistor, and a second ballast capacitor; a first end of the first ballast resistor is connected to a bias voltage, and a second end of the first ballast resistor is connected to a base electrode of the first push-pull power tube; a first end of the first ballast capacitor is connected to a first end of a secondary coil of the first spiral balun, and a second end of the first ballast capacitor is connected to a base electrode of the first push-pull power tube; a first end of the second ballast resistor is connected to the bias voltage, and a second end of the second ballast resistor is connected to a base electrode of the second push-pull power tube; the first end of the second ballast capacitor is connected to the second end of the secondary coil of the first spiral balun, and the second end of the second ballast capacitor is connected to the base of the second push-pull power tube.
10. The HBT high efficiency radio frequency power amplifier of claim 9, wherein said first ballast capacitor, said second ballast capacitor, said third capacitor, and said first helical balun secondary winding are all resonant at the fundamental frequency.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122706263.2U CN216390918U (en) | 2021-11-05 | 2021-11-05 | HBT high-efficiency radio frequency power amplifier |
| PCT/CN2022/125272 WO2023078057A1 (en) | 2021-11-05 | 2022-10-14 | Hbt high-efficiency radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122706263.2U CN216390918U (en) | 2021-11-05 | 2021-11-05 | HBT high-efficiency radio frequency power amplifier |
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| Publication Number | Publication Date |
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| CN216390918U true CN216390918U (en) | 2022-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202122706263.2U Active CN216390918U (en) | 2021-11-05 | 2021-11-05 | HBT high-efficiency radio frequency power amplifier |
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| Country | Link |
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| CN (1) | CN216390918U (en) |
| WO (1) | WO2023078057A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115882798A (en) * | 2023-02-08 | 2023-03-31 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip with push-pull structure |
| WO2023078057A1 (en) * | 2021-11-05 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Hbt high-efficiency radio frequency power amplifier |
| WO2023082938A1 (en) * | 2021-11-09 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier, radio frequency chip, and wireless communication device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106066462A (en) * | 2016-06-24 | 2016-11-02 | 浙江纺织服装职业技术学院 | Push-pull power amplifier phase compensating circuit in magnetic resonance system and compensation method |
| CN106533374A (en) * | 2016-09-20 | 2017-03-22 | 锐迪科微电子（上海）有限公司 | Multiband GSM radio-frequency power amplifier |
| CN109462411A (en) * | 2018-11-26 | 2019-03-12 | 锐石创芯（深圳）科技有限公司 | RF Amplifier Module and communication terminal |
| CN112448683B (en) * | 2021-01-29 | 2021-06-11 | 广州慧智微电子有限公司 | Push-pull type radio frequency power amplifier and circuit control method |
| CN216390918U (en) * | 2021-11-05 | 2022-04-26 | 深圳飞骧科技股份有限公司 | HBT high-efficiency radio frequency power amplifier |
-
2021
- 2021-11-05 CN CN202122706263.2U patent/CN216390918U/en active Active
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2022
- 2022-10-14 WO PCT/CN2022/125272 patent/WO2023078057A1/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023078057A1 (en) * | 2021-11-05 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Hbt high-efficiency radio frequency power amplifier |
| WO2023082938A1 (en) * | 2021-11-09 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier, radio frequency chip, and wireless communication device |
| CN115882798A (en) * | 2023-02-08 | 2023-03-31 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip with push-pull structure |
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| Publication number | Publication date |
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| WO2023078057A1 (en) | 2023-05-11 |
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