WO2023082938A1

WO2023082938A1 - Radio frequency amplifier, radio frequency chip, and wireless communication device

Info

Publication number: WO2023082938A1
Application number: PCT/CN2022/125451
Authority: WO
Inventors: 祁威; 郭嘉帅
Original assignee: 深圳飞骧科技股份有限公司
Priority date: 2021-11-09
Filing date: 2022-10-14
Publication date: 2023-05-19
Also published as: CN216390923U

Abstract

Embodiments of the present application provide a radio frequency power amplifier, comprising a first-stage power amplifier, a first transformer, a second-stage power amplifier, a second transformer, and a capacitor that are connected in sequence. A first end of the capacitor is connected between a first end of a secondary coil of the first transformer and a second end of the secondary coil of the first transformer; the second end of the capacitor is connected to the ground; and the capacitor and the first transformer resonate at a double frequency. The embodiments of the present application provide a radio frequency chip and a wireless communication device. The radio frequency power amplifier, radio frequency chip, and wireless communication device of the present application have a good harmonic rejection effect.

Description

RF power amplifier, RF chip and wireless communication equipment

technical field

The utility model relates to the technical field of circuits, in particular to a radio frequency power amplifier, a radio frequency chip and wireless communication equipment.

Background technique

At present, the development of wireless communication technology, especially the application of 5G, is becoming more and more widespread. 5G NR is a global 5G standard based on a new OFDM air interface design, and it is also a very important foundation for the next generation of cellular mobile technology. 5G technology will achieve ultra-low latency and high reliability. Due to faster data transmission and high linearity requirements, the RF power amplifier in the RF front-end module becomes an important component.

A radio frequency power amplifier in the related art generally includes a first stage power amplifier, a second power amplifier and an output matching network connected in sequence. Please refer to FIG. 1 , which is a schematic diagram of a circuit structure of a related art radio frequency power amplifier. The output matching network includes an inductor L1, a capacitor C1, an inductor L2 and a capacitor C2. The radio frequency signal is input from the radio frequency signal input terminal RFin, is amplified by the first stage power amplifier and the second power amplifier, passes through the output matching network, and is fed from the radio frequency signal output terminal RFout to the external antenna for emission.

However, the radio frequency power amplifier of the related art is 4G technology. The main advantage of the 5G network is that the data transmission rate is much higher than the previous cellular network, up to 10Gbit/s, which is faster than the current wired Internet and 100 times faster than the previous 4G LTE cellular network. Another advantage is lower network latency (faster response time), below 1 millisecond compared to 30-70 milliseconds for 4G. The RF power amplifier of the 4G LTE RF front-end module has been unable to meet the linearity requirements of 5G-NR.

Therefore, it is necessary to provide a new radio frequency power amplifier and related chips and devices to solve the above problems.

Utility model content

Aiming at the above deficiencies in the prior art, the utility model proposes a radio frequency power amplifier, a radio frequency chip and a wireless communication device with good harmonic suppression effect.

In order to solve the above technical problems, in the first aspect, embodiments of the present invention provide a radio frequency power amplifier, the radio frequency power amplifier includes a first stage power amplifier connected in sequence, a first transformer, a second stage power amplifier, a second stage power amplifier, Two transformers and capacitors;

The second-stage power amplifier includes a first power amplifier and a second power amplifier;

The input terminal of the first stage power amplifier is used as the input terminal of the radio frequency power amplifier;

The output end of the first stage power amplifier is connected to the first end of the primary coil of the first transformer;

The second terminal of the primary coil of the first transformer is connected to ground; the first terminal of the secondary coil of the first transformer is connected to the input terminal of the first power amplifier; the secondary coil of the first transformer The second end is connected to the input end of the second power amplifier;

The output terminal of the first power amplifier is connected to the first terminal of the primary coil of the second transformer;

The output end of the second power amplifier is connected to the second end of the primary coil of the second transformer;

The second end of the secondary coil of the second transformer is connected to ground; the first end of the secondary coil of the second transformer is used as the output end of the radio frequency power amplifier;

The first end of the capacitor is connected between the first end of the secondary coil of the first transformer and the second end of the secondary coil of the first transformer; the second end of the capacitor is connected to ground;

The capacitor resonates with the first transformer at double frequency.

Preferably, the capacitor is a parameter adjustable capacitor.

Preferably, the position between the first end of the capacitor connected to the first end of the secondary coil of the first transformer and the second end of the secondary coil of the first transformer is adjustable.

Preferably, both the first-stage power amplifier and the second-stage power amplifier are implemented by transistors.

In a second aspect, an embodiment of the present invention provides a radio frequency chip, and the radio frequency chip includes the radio frequency power amplifier described in any one of the above.

In a third aspect, an embodiment of the present invention provides a wireless communication device, and the radio frequency chip includes the radio frequency power amplifier described in any one of the above.

Compared with related technologies, the radio frequency power amplifier, radio frequency chip and wireless communication equipment of the utility model are split into two parts of the first power amplifier and the second power amplifier through the second stage power amplifier; The transformer splits and couples the output signal of the first stage power amplifier to the first power amplifier and the second power amplifier, and then outputs it through the second transformer. The circuit structure enables the radio frequency power amplifier of the utility model to meet the requirements of high power and high linearity. Wherein, the capacitor and the first transformer resonate at the double frequency, that is, the second-order harmonic 2F0. This circuit structure makes the harmonic suppression effect of the radio frequency power amplifier, radio frequency chip and wireless communication equipment good.

Description of drawings

Below in conjunction with accompanying drawing, describe the utility model in detail. Through the detailed description in conjunction with the following drawings, the content of the above or other aspects of the present invention will become clearer and easier to understand. In the attached picture,

Fig. 1 is the schematic diagram of the circuit structure of the radio frequency power amplifier of related art;

FIG. 2 is a schematic diagram of the circuit structure of the radio frequency power amplifier of the present invention.

Detailed ways

The specific embodiment of the utility model will be described in detail below in conjunction with the accompanying drawings.

The specific implementations/embodiments described here are specific specific implementations of the present utility model, and are used to illustrate the concept of the present utility model. Limitations on the scope of utility models. In addition to the embodiments described here, those skilled in the art can also adopt other obvious technical solutions based on the claims of the application and the contents disclosed in the description, and these technical solutions include adopting any obvious changes made to the embodiments described here. The replacement and modified technical solutions are all within the protection scope of the present utility model.

The embodiment of the utility model provides a radio frequency power amplifier 100 .

Please refer to FIG. 2 at the same time, wherein FIG. 2 is a schematic diagram of the circuit structure of the radio frequency power amplifier 100 of the present invention.

The radio frequency power amplifier 100 of the present invention includes a first stage power amplifier 1 , a first transformer 2 , a second stage power amplifier 3 , a second transformer 4 and a capacitor C connected in sequence. Wherein, the second stage power amplifier 3 includes a first power amplifier 31 and a second power amplifier 32 .

In this implementation manner, both the first-stage power amplifier 1 and the second-stage power amplifier 3 are implemented by transistors. , the first-stage power amplifier 1 and the second-stage power amplifier 3 are composed of transistors, which is conducive to the integration of the radio frequency power amplifier 100 of the present invention into the chip, and meets the 5G technical indicators, and has excellent performance in the N40/N41 frequency band good.

Specifically, the specific circuit structure of the radio frequency power amplifier 100 of the present invention is:

The input terminal of the first stage power amplifier 1 is used as the input terminal RFin of the radio frequency power amplifier 100 .

The output end of the first stage power amplifier 1 is connected to the first end of the primary coil of the first transformer 2 .

The second end of the primary coil of the first transformer 2 is connected to the ground GND. The first end of the secondary coil of the first transformer 2 is connected to the input end of the first power amplifier 31 . The second end of the secondary coil of the first transformer 2 is connected to the input end of the second power amplifier 32 .

The output end of the first power amplifier 31 is connected to the first end of the primary coil of the second transformer 4 .

The output end of the second power amplifier 32 is connected to the second end of the primary coil of the second transformer 4 .

The second terminal of the secondary coil of the second transformer 4 is connected to the ground GND. The first terminal of the secondary coil of the second transformer 4 serves as the output terminal RFout of the RF power amplifier 100 .

The first terminal of the capacitor C is connected between the first terminal of the secondary coil of the first transformer 2 and the second terminal of the secondary coil of the first transformer 2 . The second end of the capacitor C is connected to the ground GND.

The working principle of the radio frequency power amplifier is:

The radio frequency power amplifier 100 is split into two parts of the first power amplifier 31 and the second power amplifier 32 by the second stage power amplifier 3; the output of the first stage power amplifier 1 is then passed through the first transformer 2 The signal splitting is coupled to the first power amplifier 31 and the second power amplifier 32, and then through the second transformer 4, the radio frequency signals output by the two parts of the second stage power amplifier 3 are synthesized into one signal and output. The radio frequency signal is input from the input terminal RFin of the radio frequency power amplifier 100, amplified through the first stage power amplifier 1, then coupled to the second stage power amplifier 3 through the first transformer 2, and finally the second stage power is transferred through the second transformer 4. The radio frequency signals output by the two parts of the amplifier 3 are synthesized into one signal to the output terminal RFout of the radio frequency power amplifier 100 and fed to an external antenna for emission. This structure enables the radio frequency power amplifier 100 of the present invention to meet the requirements of high power and high linearity.

The capacitor C resonates with the first transformer 2 at double frequency. That is, the second-order harmonic 2F0, that is, or , the circuit structure suppresses the second-order harmonic, and the circuit structure makes the radio frequency power amplifier 100 have a good harmonic suppression effect.

In this implementation manner, the capacitor C is a parameter adjustable capacitor. The user can accurately suppress the second-order harmonic of the RF power amplifier 100 by adjusting the parameter of the capacitor C according to actual needs, so that the harmonic suppression effect of the RF power amplifier 100 is good.

More preferably, the position between the first end of the capacitor C connected to the first end of the secondary coil of the first transformer 2 and the second end of the secondary coil of the first transformer 2 is adjustable. This circuit structure makes the second order harmonic 2F0 formed by the capacitor C and the first transformer 2 more effective. Therefore, the harmonic suppression effect of the radio frequency power amplifier 100 is good.

In order to verify that the harmonic suppression effect of radio frequency power amplifier 100 of the present utility model is good, under the condition of Vcc=4.5v and N40/N41 frequency band, the simulation result of table 1 and table 2 is obtained to radio frequency power amplifier 100 simulation:

Please refer to Table 1 below:

Table 1. Simulation results of 1db compression point power

Please refer to Table 2 below:

Table 2. Simulation results of 35.5dBm gain output power

From the data in Table 1 and Table 2 above, it can be obtained that the RF power amplifier 100 can achieve a 1db compression point power of about 35.5dBm, which is about 2.5dB higher than the traditional architecture, and can obtain better second-order harmonic performance.

In the above structure, the carrier input matching network 2 is arranged in front of the input end of the carrier power amplifier 3 , and the peak input matching network 4 is arranged in front of the input end of the peak power amplifier 5 . This setting enables uniform or non-uniform power distribution of the input power through the impedance value of the carrier input matching network 2 and the impedance value of the peak input matching network 4, thereby replacing the larger power divider in the related art, Therefore, the layout area of the radio frequency power amplifier 100 is small, and it is easy to be integrated on a GaAs HBT process chip.

The utility model also provides a radio frequency chip. The radio frequency chip includes the radio frequency power amplifier 100 .

The utility model also provides a wireless communication device. The radio frequency chip includes the radio frequency power amplifier 100 .

It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the utility model rather than limit the scope of the utility model, those of ordinary skill in the art should understand that without departing from the spirit and scope of the utility model Any modifications or equivalent replacements made to the present utility model under the premise of the present utility model shall be covered within the scope of the present utility model. Further, words appearing in the singular include the plural and vice versa unless the context otherwise requires. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.

Claims

A radio frequency power amplifier, characterized in that the radio frequency power amplifier includes a first stage power amplifier, a first transformer, a second stage power amplifier, a second transformer and a capacitor connected in sequence;

The second-stage power amplifier includes a first power amplifier and a second power amplifier;

The input terminal of the first stage power amplifier is used as the input terminal of the radio frequency power amplifier;

The output end of the first stage power amplifier is connected to the first end of the primary coil of the first transformer;

The second terminal of the primary coil of the first transformer is connected to ground; the first terminal of the secondary coil of the first transformer is connected to the input terminal of the first power amplifier; the secondary coil of the first transformer The second end is connected to the input end of the second power amplifier;

The output terminal of the first power amplifier is connected to the first terminal of the primary coil of the second transformer;

The output end of the second power amplifier is connected to the second end of the primary coil of the second transformer;

The second end of the secondary coil of the second transformer is connected to ground; the first end of the secondary coil of the second transformer is used as the output end of the radio frequency power amplifier;

The first end of the capacitor is connected between the first end of the secondary coil of the first transformer and the second end of the secondary coil of the first transformer; the second end of the capacitor is connected to ground;

The capacitor resonates with the first transformer at double frequency.
The radio frequency power amplifier according to claim 1, wherein the capacitor is a parameter adjustable capacitor.
The radio frequency power amplifier according to claim 1, wherein the first end of the capacitor is connected to the first end of the secondary coil of the first transformer and the second end of the secondary coil of the first transformer. The position between the ends is adjustable.
The radio frequency power amplifier according to claim 1, characterized in that, both the first stage power amplifier and the second stage power amplifier are implemented by transistors.
A radio frequency chip, characterized in that the radio frequency chip comprises a radio frequency power amplifier according to any one of claims 1-4.
A wireless communication device, characterized in that the radio frequency chip includes a radio frequency power amplifier according to any one of claims 1-4.