CN111525894B - Radio frequency low noise amplifier with broadband and high interference elimination capability - Google Patents
Radio frequency low noise amplifier with broadband and high interference elimination capability Download PDFInfo
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- CN111525894B CN111525894B CN202010510788.6A CN202010510788A CN111525894B CN 111525894 B CN111525894 B CN 111525894B CN 202010510788 A CN202010510788 A CN 202010510788A CN 111525894 B CN111525894 B CN 111525894B
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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Abstract
The invention relates to a broadband radio frequency low noise amplifier with high interference elimination capability, which solves the technical problem of performance deterioration of the existing radio frequency integrated circuit when working in a strong electromagnetic interference environment. The drain electrode of the second MOS tube is in short circuit with the drain electrode of the fourth MOS tube, the loss of the fourth inductor is eliminated by utilizing the negative resistance generated by loop feedback, meanwhile, the second MOS tube works in a low power consumption state of a subthreshold region, and then the third capacitor is used as a source degeneration capacitor of the second MOS tube, so that the quality factor of the interference suppression notch filter is improved, and the interference suppression performance of the circuit is greatly enhanced. The invention can be widely applied to the field of low-power-consumption radio frequency front-end circuit design with strong anti-jamming capability.
Description
Technical Field
The invention relates to the technical field of radio frequency amplification circuit design, in particular to a radio frequency low noise amplifier with broadband and high interference elimination capability.
Background
With the development of radio frequency integrated circuit technology and technology, wireless technology is developing towards large data capacity and high speed, and Ultra Wide Band (UWB) technology is the most promising wireless communication technology for solving the application problem of short-distance high-speed communication at present. The method has the advantages of good confidentiality, low power consumption, high data rate, strong multipath resistance and the like. Under the FCC standard, the emission power spectral density of the UWB frequency band of 3.1-10.6GHz is below-41.3 dBm/MHz, and a large number of interference signals with different frequency points exist in the UWB frequency band, so that the sensitivity performance of a broadband receiver is greatly reduced.
The low noise amplifier, which is the most important part of the radio frequency receiver, needs to amplify a weak signal without distortion, and for a wideband low noise amplifier, a strong interference signal exists in a passband, and the interference signal needs to be sufficiently suppressed to prevent distortion of a useful signal and saturation of a subsequent stage circuit caused by the interference signal.
The planar spiral inductor in the radio frequency integrated circuit generally has a very low quality factor (approximately equal to 10), and the trap suppression of the on-chip inductor on an interference frequency point cannot obtain a high suppression rate and cannot meet the design requirement of a system.
Disclosure of Invention
The invention provides a radio frequency low noise amplifier with excellent broadband and high interference elimination capability in the operation of strong electromagnetic interference environment, aiming at solving the technical problem of performance deterioration of the existing radio frequency integrated circuit in the operation of the strong electromagnetic interference environment.
The invention provides a broadband radio frequency low noise amplifier with high interference elimination capability, which is provided with a broadband input matching module, a double-resonance load module, a high-interference rejection rate notch filter module and a gain peaking module;
the broadband input matching module is used for realizing broadband matching and maximum power transmission and converting the alternating small signal voltage into alternating small signal current;
the double-resonance load module is used for realizing broadband gain and amplifying broadband signals with low noise;
the high-interference rejection rate notch filter module improves the quality factor and enhances the interference rejection performance of the circuit;
the gain peaking module is used for realizing high-frequency gain expansion and realizing wider bandwidth;
the broadband input matching module is connected with the double-resonance load module, the gain peaking module is simultaneously connected with the broadband input matching module and the double-resonance load module, the gain peaking module is further connected with the high-interference rejection rate notch filter module, the broadband input matching module is connected with the RFin, and the gain peaking module is connected with the RFout.
Preferably, the broadband input matching module comprises a first capacitor, a first inductor and a first MOS transistor;
the double-resonance load module comprises a second inductor, a third inductor and a second capacitor;
the high interference rejection rate notch filter module comprises a third capacitor, a fourth inductor, a second MOS (metal oxide semiconductor) tube and a third MOS tube;
the gain peaking module comprises a fourth MOS tube, a fifth inductor, a first resistor and a second resistor;
wherein:
the first end of the first capacitor is used as the input end of the low noise amplifier, and the other end of the first capacitor is connected with the first end of the first inductor and the source electrode of the first MOS tube;
the other end of the first inductor is directly connected to the ground, the first end of the second inductor is connected with the drain electrode of the first MOS transistor and the first end of the third inductor, and the other end of the second inductor is connected with the first power supply;
the grid electrode of the first MOS tube is connected with a first bias voltage, and the other end of the third inductor is connected with the first end of the second capacitor;
the other end of the second capacitor is connected with the first end of the first resistor and the grid electrode of the fourth MOS tube, and the other end of the first resistor is connected with a second bias voltage;
the source electrode of the fourth MOS tube is directly connected to the ground, and the drain electrode of the fourth MOS tube is connected with the drain electrode of the second MOS tube, the first end of the fourth inductor and the source electrode of the fifth MOS tube;
the grid electrode of the second MOS tube is connected with the other end of the fourth inductor, and the source electrode of the second MOS tube is connected with the drain electrode of the third MOS tube and the first end of the third capacitor;
the other end of the third capacitor is directly connected to the ground, the grid electrode of the third MOS tube is connected with a third bias voltage, and the source electrode of the third MOS tube is directly connected to the ground;
the grid electrode of the fifth MOS tube is connected to the second power supply voltage, the drain electrode of the fifth MOS tube is connected to the first end of the fifth inductor and serves as the output end of the low-noise amplifier, the other end of the fifth inductor is connected with the first end of the second resistor, and the other end of the second resistor is connected to the second power supply voltage.
Preferably, in the dual-resonant load module and the gain peaking module, the second inductor, the third inductor and the fifth inductor together determine a bandwidth of the low noise amplifier, and the second resistor determines a gain flatness of the low noise amplifier.
Preferably, in the high interference rejection rate notch filter module, the second MOS transistor operates at a sub-threshold to efficiently generate a negative resistance and eliminate an internal resistance loss of the fourth inductor, the third capacitor is used to improve a quality factor of the notch filter, and an interference rejection effect can be adjusted by changing the third bias voltage.
The invention also provides a radio frequency front end integrated circuit which comprises the broadband radio frequency low noise amplifier with high interference elimination capability.
The invention has the beneficial effects that:
the low-noise amplifier comprises a broadband input matching module, a matching resistor which is close to 50 omega in a broadband is obtained by virtue of the inherent impedance characteristic of a common grid structure of a first MOS tube, the influence of input parasitic capacitance on input impedance in high frequency is eliminated by connecting a first inductor ground in series with a source electrode of the first MOS tube, the input matching bandwidth is expanded to a great extent, and the low-noise amplifier can work in a very wide frequency band.
The low-noise amplifier comprises a double-resonance load module, wherein the second inductor and the third inductor are used as drain electrode loads of the first MOS tube, and the gain resonance peak is pushed to high frequency and low frequency by using a double-resonance technology, so that the gain of a broadband is realized without introducing extra power consumption.
According to the low-noise amplifier, through the high-interference rejection rate notch filter module, the drain electrode of the second MOS tube is in short circuit with the drain electrode of the fourth MOS tube, the loss of the fourth inductor is eliminated through negative resistance generated by loop feedback, meanwhile, the second MOS tube works in a low-power consumption state in a subthreshold region, and then the third capacitor is used as a source degeneration capacitor of the second MOS tube, so that the quality factor of the interference rejection notch filter is improved, and the interference rejection performance of a circuit is greatly enhanced.
Drawings
FIG. 1 is a diagram of an integrated circuit module connection according to the present invention;
FIG. 2 is a schematic diagram of an integrated circuit of the present invention;
fig. 3 is a figure of merit for a high rejection rate notch filter module of the present invention at a different third capacitance Cn;
FIG. 4 is a schematic diagram of the gain effect of each stage and the overall gain superposition according to the present invention;
fig. 5 is a graph of simulation results of voltage gain of the present invention.
Description of the symbols of the drawings:
1. a broadband input matching module; 2. a dual resonant load module; 3. a high interference rejection rate notch filter module; 4. and a gain peaking module.
Detailed Description
The present invention is further described below with reference to the drawings and examples so that those skilled in the art can easily practice the present invention.
As shown in fig. 1, a connection diagram of a wideband rf low noise amplifier integrated circuit module with high interference cancellation capability provided by the present invention is shown, where the rf low noise amplifier integrated circuit module includes:
the device comprises a broadband input matching module 1, a double-resonance load module 2, a high-interference rejection rate notch filter module 3 and a gain peaking module 4.
The broadband input matching module 1 is used for realizing broadband 50 omega matching from an antenna end to a low-noise amplifier, realizing maximum power transmission and simultaneously converting alternating small-signal voltage into alternating small-signal current.
The dual-resonance load module 2 is used to realize a broadband gain, so that the low-noise amplifier shown in the embodiment can perform low-noise amplification on a broadband signal.
The high interference rejection rate notch filter module 3 utilizes the short circuit of the drain electrode of the second MOS transistor and the drain electrode of the fourth MOS transistor, utilizes the loop feedback to generate a negative resistance, eliminates the loss of the fourth inductor, simultaneously, the second MOS transistor works in a low power consumption state of a subthreshold region, and the third capacitor is used as a source degeneration capacitor of the second MOS transistor, so that the quality factor of the interference rejection notch filter is improved, and the interference rejection performance of the circuit is greatly enhanced.
The gain peaking module 4 is used for realizing high-frequency gain expansion and realizing wider bandwidth;
the broadband input matching module 1 is connected with the double-resonance load module 2, the gain peaking module 4 is simultaneously connected with the broadband input matching module 1 and the double-resonance load module 2, the gain peaking module 4 is also connected with the high-interference rejection rate notch filter module 3, the broadband input matching module 1 is connected with RFin, and the gain peaking module 4 is connected with RFout.
Specifically, as shown in fig. 2, in this embodiment: the broadband input matching module 1 comprises a first capacitor Cb, a first MOS (metal oxide semiconductor) tube M1 and a first inductor Lb; the double-resonance load module 2 comprises a second capacitor Cs1, a second inductor Lp1 and a third inductor Ls1; the high interference rejection rate notch filter module 3 comprises a third capacitor Cn, a fourth inductor Ln, a second MOS transistor M4, and a third MOS transistor M5; the gain peaking module 4 comprises a fifth inductor Lp2, a fourth MOS tube M2, a fifth MOS tube M3, a first resistor Rb and a second resistor Rs1; the power supply is also provided with an input port Vin, an output port Vout, a first power supply voltage VDD1, a second power supply voltage VDD2, a first bias voltage Vb1, a second bias voltage Vb2 and a third bias voltage Vb3; wherein:
a first end of the first capacitor Cb serves as an input terminal Vin of the low noise amplifier in the embodiment, and the other end of the first capacitor Cb is connected to a first end of the first inductor Lb and a source of the first MOS transistor M1.
The other end of the first inductor Lb is directly connected to ground, a first end of the second inductor Lp1 is connected to the drain of the first MOS transistor M1 and a first end of the third inductor Ls1, and the other end of the second inductor Lp1 is connected to the first power supply VDD 1.
The grid electrode of the first MOS transistor M1 is connected to the first bias voltage Vb1, and the other end of the third inductor Ls1 is connected to the first end of the second capacitor Cs 1.
The other end of the second capacitor Cs1 is connected to the first end of the first resistor Rb and the gate of the fourth MOS transistor M2, and the other end of the first resistor Rb is connected to the second bias voltage Vb 2.
The source electrode of the fourth MOS transistor M2 is directly connected to the ground, and the drain electrode of the fourth MOS transistor M2 is connected to the drain electrode of the second MOS transistor M4, the first end of the fourth inductor Ln, and the source electrode of the fifth MOS transistor M3.
The grid electrode of the second MOS transistor M4 is connected to the other end of the fourth inductor Ln, and the source electrode of the second MOS transistor M4 is connected to the drain electrode of the third MOS transistor M5 and the first end of the third capacitor Cn.
The other end of the third capacitor Cn is directly connected to ground, the gate of the third MOS transistor M5 is connected to the third bias voltage Vb3, and the source of the third MOS transistor M5 is directly connected to ground.
The gate of the fifth MOS transistor M3 is connected to the second power supply voltage VDD2, the drain of the fifth MOS transistor M3 is connected to the first end of the fifth inductor Lp2 as the output terminal Vout of the low noise amplifier of the embodiment, the other end of the fifth inductor Lp2 is connected to the first end of the second resistor Rs1, and the other end of the second resistor Rs1 is connected to the second power supply voltage VDD2.
The specific operation principle of the integrated circuit schematic diagram of the broadband radio frequency low noise amplifier with high interference cancellation capability provided by the invention in fig. 2 is as follows:
the specific embodiment is a low-noise amplifier with high interference elimination capability working at 3.1-10.6GHz, and the broadband input matching module 1 realizes broadband matching with a broadband antenna at 3.1-10.6GHz so as to realize maximum power transmission and better noise performance.
The transconductance of the first MOS transistor M1 directly provides the real part impedance of the input matching module, and meanwhile, the real part impedance is only related to the magnitude of the transconductance under the ideal condition, and the transconductance can be set to be 20mS by changing the first bias voltage Vb1, so that the generation of the real part impedance of 50 omega is realized.
The first inductor Lb is used for resonating with a source electrode capacitor of the first MOS tube M1, so that broadband input matching is achieved.
In the dual-resonance load module 2, a drain capacitance of the first MOS transistor M1 and the second inductance Lp1 form parallel resonance, a resonance center frequency is w _0 and is located at a center frequency of 3.1-10.6GHz, a gate capacitance of the third inductance Ls1 and the fourth MOS transistor M2 form series resonance, a resonance frequency is also w _0 and is located at a center frequency of 3.1-10.6GHz, the two resonance networks form a parallel-series dual-resonance load network to form two resonance peaks of a high frequency and a low frequency, and therefore high gain in a wide band is achieved.
In the high interference rejection rate notch filter module 3, the drain of the second MOS transistor M4 is shorted with the drain of the fourth MOS transistor M2, and the formed loop generates a negative resistance, so that the real part of the input impedance Z _ in looking into the high interference rejection rate notch filter module 3 from the drain of the fourth MOS transistor M2 is 0 at the frequency w _ n, thereby eliminating the loss of the fourth inductor Ln as a notch filter. Further, the third capacitor Cn serves as a source degeneration capacitor of the second MOS transistor M4 to pull up the notch frequency of the high-interference-rejection-rate notch filter module 3 to w _ n, so as to obtain that Z _ in is equal to 0 at w _ n, thereby improving the quality factor of the notch filter, and completely attenuating the interference with frequency w _ n by the high-interference-rejection-rate notch filter module 3.
Referring to the quality factors of the high-rejection-rate notch filter module 3 provided in fig. 3 under different third capacitances Cn, the larger the quality factor is, the better the rejection effect of the interference is. The abscissa of fig. 3 is frequency (GHz), the ordinate is quality factor, different curves represent quality factors under different third capacitances Cn, and the quality factor of the original fourth inductance Ln is 10, and simulation results prove that the high interference rejection rate notch filter module 3 can improve the quality factor of the notch filter, and meanwhile, the third capacitance Cn can be adjusted to conveniently adjust the quality factor.
Referring to fig. 4, a schematic diagram of superposition of gain effects and overall gains of a broadband and high interference cancellation capability rf low noise amplifier integrated circuit is provided, where the dual resonant load module 2 has two high-gain points at high and low frequencies, the high interference rejection notch filter module 3 suppresses gains at interference frequencies, and the gain peaking module 4 is used to compensate gains at high frequencies, so that the broadband gain effect is flat.
Referring to fig. 5, where the abscissa of fig. 5 is frequency (GHz) and the ordinate is power gain (dB), fig. 5 is a simulation result of the circuit of fig. 2, and under the broadband and high-linearity radio frequency low noise amplifier provided in the embodiment of fig. 2, the maximum power gain of 16.05dB is achieved, the bandwidths of the high and low frequency bands 3dB are 6.2-10.1GHz and 3.3-4.6GHz, the interference rejection ratio to 5.8GHz is 40.9dB, and the high interference rejection notch filter module 3 only consumes 0.456mA of current.
The above description is only for the purpose of illustrating preferred embodiments of the present invention and is not to be construed as limiting the present invention, and it is apparent to those skilled in the art that various modifications and variations can be made in the present invention. All modifications, equivalents, improvements and the like which come within the scope of the invention as defined by the claims should be understood as falling within the scope of the invention.
Claims (4)
1. A radio frequency low noise amplifier with broadband and high interference elimination capability is characterized by being provided with a broadband input matching module, a double-resonance load module, a high interference rejection rate notch filter module and a gain peaking module;
the broadband input matching module is used for realizing broadband matching and maximum power transmission and converting the alternating small signal voltage into alternating small signal current;
the double-resonance load module is used for realizing broadband gain and amplifying broadband signals with low noise;
the high-interference rejection rate notch filter module improves the quality factor and enhances the interference rejection performance of the circuit;
the gain peaking module is used for realizing high-frequency gain expansion and realizing wider bandwidth;
the broadband input matching module is connected with the double-resonance load module, the gain peaking module is simultaneously connected with the broadband input matching module and the double-resonance load module, the gain peaking module is also connected with the high-interference rejection rate notch filter module, the broadband input matching module is connected with RFin, and the gain peaking module is connected with RFout;
the broadband input matching module comprises a first capacitor, a first inductor and a first MOS (metal oxide semiconductor) tube;
the double-resonance load module comprises a second inductor, a third inductor and a second capacitor;
the high interference rejection rate notch filter module comprises a third capacitor, a fourth inductor, a second MOS (metal oxide semiconductor) tube and a third MOS tube;
the gain peaking module comprises a fourth MOS tube, a fifth inductor, a first resistor and a second resistor;
wherein:
the first end of the first capacitor is used as the input end of the low noise amplifier, and the other end of the first capacitor is connected with the first end of the first inductor and the source electrode of the first MOS tube;
the other end of the first inductor is directly connected to the ground, the first end of the second inductor is connected with the drain electrode of the first MOS transistor and the first end of the third inductor, and the other end of the second inductor is connected with a first power supply;
the grid electrode of the first MOS tube is connected with a first bias voltage, and the other end of the third inductor is connected with the first end of the second capacitor;
the other end of the second capacitor is connected with the first end of the first resistor and the grid electrode of the fourth MOS transistor, and the other end of the first resistor is connected with a second bias voltage;
the source electrode of the fourth MOS tube is directly connected to the ground, and the drain electrode of the fourth MOS tube is connected with the drain electrode of the second MOS tube, the first end of the fourth inductor and the source electrode of the fifth MOS tube;
the grid electrode of the second MOS tube is connected with the other end of the fourth inductor, and the source electrode of the second MOS tube is connected with the drain electrode of the third MOS tube and the first end of the third capacitor;
the other end of the third capacitor is directly connected to the ground, the gate of the third MOS transistor is connected with a third bias voltage, and the source of the third MOS transistor is directly connected to the ground;
the grid electrode of the fifth MOS tube is connected to a second power supply voltage, the drain electrode of the fifth MOS tube is connected to the first end of the fifth inductor and serves as the output end of the low noise amplifier, the other end of the fifth inductor is connected with the first end of the second resistor, and the other end of the second resistor is connected to the second power supply voltage.
2. The wideband, high interference cancellation capability rf low noise amplifier according to claim 1, wherein in the dual resonant load module and the gain peaking module, the second inductor, the third inductor and the fifth inductor together determine a bandwidth of the low noise amplifier, and the second resistor determines a gain flatness of the low noise amplifier.
3. The wideband high-interference-rejection radio frequency low-noise amplifier according to claim 1, wherein in the high-interference-rejection notch filter module, the second MOS transistor operates at a sub-threshold for efficiently generating a negative resistance to eliminate an intrinsic resistance loss of the fourth inductor, the third capacitor is used to increase a quality factor of the notch filter, and changing a third bias voltage can adjust an interference-rejection effect.
4. A radio frequency front end integrated circuit comprising a wideband, high interference cancellation radio frequency low noise amplifier according to any of claims 1-3.
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| CN112769440B (en) * | 2020-11-04 | 2022-03-18 | 山东科技大学 | Low-power-consumption digital intelligent USBL receiver |
| CN114793093B (en) * | 2022-04-28 | 2024-04-12 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
| CN117713706B (en) * | 2024-02-06 | 2024-06-07 | 深圳飞骧科技股份有限公司 | Low-noise amplifier and radio frequency chip |
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