CN209844918U - High-octave ultra-wideband input matching circuit for low-noise amplifier - Google Patents

Abstract

The utility model relates to a high octave ultra wide band input matching circuit for low noise amplifier belongs to radio frequency integrated circuit technical field. The input matching circuit comprises a current multiplexing amplification unit, a first inductor, a second inductor and a resistor, wherein the current multiplexing amplification unit comprises an NMOS transistor and a PMOS transistor which are connected with each other through a grid electrode and a drain electrode, an input end of the matching circuit is connected to the grid electrode of the NMOS (PMOS) transistor through the first inductor, the drain electrode of the NMOS (PMOS) transistor is used as an output end of the matching circuit, a source electrode of the NMOS transistor is connected to the ground through the second inductor, the source electrode of the PMOS transistor in the current multiplexing amplification unit is connected to a power supply, and a feedback resistor is connected between the input end and the output end of the matching circuit in a. The utility model discloses can be applied to and realize high octave ultra wide band input matching in the design of high octave ultra wide band low noise amplifier chip.

Description

High-octave ultra-wideband input matching circuit for low-noise amplifier

Technical Field

The utility model belongs to the technical field of Low Noise Amplifier (Low Noise Amplifier, LNA for short) among the radio frequency integrated circuit, especially indicate a high octave ultra wide band input matching circuit for Low Noise Amplifier.

Background

A series of scientific and technological achievements promoted by continuous progress of modern wireless communication technology have widely penetrated into the fields of social economy, military affairs, culture and the like. Currently, the frequency spectrum range below the Ka band covers civilian wireless communication and wireless internet access frequency bands such as 2G/3G mobile communication, 4G-LTE mobile communication, 5 th generation mobile communication, navigation, satellite communication, IEEE 802.11a/b/G, High Data Rate (HDR) ultra wide band, and military communication frequency bands such as communication countermeasure and radar reconnaissance. With the continuous upgrade of civil mobile communication services, 2G/3G/4G-LET is integrated on hardware, and besides, other applications still exist independently. However, with the further development of wireless communication technology, the concept of multi-sideband and multi-standard has attracted considerable attention, and particularly, the concept of multi-functional integration of wireless communication electronic systems is gradually keen by the push of the strong demand of software radio design on reusable hardware platforms. In order for a single device to support multiple communication standards and a variety of different applications, the expansion of the operating band becomes a necessary route for transceiver design. The front end of the high octave ultra-wideband receiver adopting the single-channel design is comprehensively superior to the design scheme of the multi-channel parallel in the aspects of manufacturing cost, chip size and power consumption.

Due to the first stage active circuit as a front end of the radio receiver, the LNA plays a very important role in the radio receiving system: by means of which the input signal can be amplified sufficiently and the desired signal-to-noise ratio is achieved at the output. For the LNA applied to multimode multistandard, the high octave ultra-wideband input matching is one of the most critical design techniques, because the high octave ultra-wideband input matching circuit not only determines the port standing wave performance of the LNA, but also has a great influence on the noise figure. S is usually used in the design process₁₁To measure the input matching of the LNA, the noise figure is generally expressed by nf (noise figure).

In the field of ultra-wideband LNA design, engineering technicians at home and abroad provide effective technical schemes.

Jonathan Borrowans, Piet Wambacq, Charlotte Sonns et al propose an Active Feedback LNA in "Low-Area Active-Feedback Low-Noise Amplifier Design in scaled digital CMOS" at pages 2422 and 2433 of IEEE JSSC 2008. The LNA only adopts a Cascode unit and is matched with an active feedback technology, so that the broadband input matching performance of 0-6.5 GHz is shown at lower power consumption. However, the active feedback circuit limits the high frequency matching and noise of the LNA, and it is difficult to realize a high octave LNA design to the millimeter wave band.

A Dual RLC Branch input Matching Network for LNA Design is proposed by Yo-Sheng Lin, Chang-Zhi Chen, Hong-Yu Yang et al in IEEE TMTT 2010, pp 287-296, "Analysis and Design of a CMOS UWB LNA With Dual-RLC-branched input Matching Network", and the input Matching bandwidth of the LNA can reach 2.6-11.9 GHz, but the Design scheme can not realize the input Matching of 1GHz and can deteriorate the high-frequency noise coefficient.

Hsien-Ku Chen, Yo-sheng Lin, Shey-Shi Lu in IEEE TMTT 2010, 2092 and 2104 of "Analysis and Design of a 1.6-28GHz Compact Wideband LNA in 90-nm CMOS Using a pi-Match Input Network" proposes a pi-type Input matching Network for LNA Design, the Input matching bandwidth of the LNA can reach 1.6-28GHz, but the Design scheme needs to be realized by a capacitor connected with the Input end in parallel, and the introduction of the capacitor can deteriorate the noise coefficient of the LNA.

An improved pi-type input matching Network for LNA design is provided in IEEE MWCL 2014, page 200-202, by Yo-shade Lin, Chien-Chin Wang, Guan-Lin Lee and the like, the input matching bandwidth of the LNA can reach 0-12 GHz, the problem of Low-frequency mismatch is overcome, and the Noise coefficient of the LNA can still be deteriorated by the parasitic resistance of an input stage inductor.

The utility model discloses a self-biased ultra wide band low power consumption low noise amplifier (ZL201510220400.8) of Yangguang, xu Shilong, Du Keming et al in utility model patent proposes the input matching circuit based on active device is as load and resistance negative feedback, and the input stage inductance is replaced with the bonding wire and can not only realize ultra wide band matching but also avoid the worsening of noise figure, but the value of inductance of bonding wire is difficult to control, and the input matching performance of different circuits may produce great difference.

SUMMERY OF THE UTILITY MODEL

In view of this, the utility model provides a high octave ultra wide band input matching circuit for low noise amplifier, it can solve the monolithic high octave ultra wide band matching problem of LNA, does not have great influence to noise figure again simultaneously.

In order to realize the purpose, the utility model discloses a technical scheme be:

a high octave ultra-wideband input matching circuit for a low noise amplifier comprises a current multiplexing amplification unit, a first inductor, a second inductor, a resistor, a power supply end, a grounding end, an input end and an output end;

the current multiplexing amplification unit comprises an NMOS transistor and a PMOS transistor, wherein the grid electrode of the NMOS transistor is connected with the grid electrode of the PMOS transistor, the drain electrode of the NMOS transistor is connected with the drain electrode of the PMOS transistor and is connected to the output end together, and the source electrode of the PMOS transistor is connected with the power supply end;

the grid electrode of the NMOS transistor and/or the PMOS transistor is connected to one end of a first inductor, the other end of the first inductor is connected with the input end, the source electrode of the NMOS transistor is connected to one end of a second inductor, the other end of the second inductor is connected with the grounding end, and the resistor is connected between the input end and the output end in a bridging mode.

Compared with the prior art, the utility model, following beneficial effect has:

1) the utility model is used for can realize during the LNA design that DC matches to the high octave ultra wide band input of millimeter wave frequency channel.

2) The utility model provides a feedback point that the structure will match in the network is leading, has weakened parasitic resistance in the grid series inductance to LNA noise figure's influence.

Drawings

Fig. 1 is a schematic diagram of a high octave ultra-wideband input matching circuit for a low noise amplifier according to an embodiment of the present invention.

Fig. 2(a) and 2(b) are a small-signal equivalent circuit and a decomposition circuit thereof of fig. 1, respectively.

FIG. 3 is an embodiment of the present invention, which is an input matching parameter S for a high octave UWB input matching circuit of a LNA₁₁The simulation curve of (1).

Fig. 4 is a NF simulation curve of the LNA design using the high octave ultra-wideband input matching circuit for the LNA according to an embodiment of the present invention.

Detailed Description

The present invention will be described in detail with reference to the accompanying drawings and specific embodiments.

A high octave ultra-wideband input matching circuit for a low noise amplifier comprises a current multiplexing amplification unit, a first inductor, a second inductor and a feedback resistor. The current multiplexing amplification unit is composed of an NMOS transistor and a PMOS transistor which are connected in a stacking mode, and the specific connection relationship is as follows: the grid of the NMOS transistor is connected with the grid of the PMOS transistor, the drain of the NMOS transistor is connected with the drain of the PMOS transistor and then connected with the output end of the input matching circuit, one end of a first inductor of the grid is used as the input end of the input matching circuit, and the other end of the first inductor is connected with the grid of the NMOS (PMOS) transistor. The source of the NMOS transistor is connected to one end of a second inductor, the other end of the second inductor is grounded, and the source of the PMOS transistor is connected to a power supply. One end of the feedback resistor is connected with the input end of the matching circuit, and the other end of the feedback resistor is connected with the output end of the matching circuit.

Specifically, as shown in fig. 1, a high octave ultra-wideband input matching circuit for a low noise amplifier comprises: an NMOS transistor M₁A PMOS transistor M₂A resistor R_fAnd two inductors L₁、L₂，M₁And M₂The pin meaning of (a) is shown in the pin diagram of the figure.

Wherein, the NMOS transistor M₁And a PMOS transistor M₂Are connected together, an NMOS transistor M₁And a PMOS transistor M₂Are also connected together and serve as the output of the input matching circuit. Input terminal of matching circuit and inductor L₁Is connected to one end of an inductor L₁Is connected to the NMOS transistor M at the other end₁And a PMOS transistor M₂A gate electrode of (1). NMOS transistor M₁Is connected to the inductance L₂One terminal of (1), inductance L₂And the other end of the same is grounded. PMOS transistor M₂Is connected to a power supply V_DC. Resistance R_fAcross the input and output terminals.

The inductance L needs to be considered when designing the matching circuit₁Including the parasitic resistance R₁. In addition, the input parasitic C of the subsequent stage circuit_LIt also has some effect on the input matching of the LNA, and also needs to be considered in the design of the matching circuit.

FIG. 2(a) is the small signal equivalent circuit of FIG. 1, including R as described above₁And C_LFIG. 2(b) is a further exploded view of FIG. 2(a), showing the resistance R_fDecomposed into resistances R_f1And a resistance R_f2. Defining ω as the angular frequency of the signal, ω in FIGS. 2(a) and (b)_T1≈g_m1/C_gs1Is a feature of the transistor M1Characteristic angular frequency, g_m1Is the transconductance of transistor M1, C_gs1Is the gate-source parasitic capacitance of the transistor M1, and, in addition, C_gd1Is the gate-drain parasitic capacitance, C, of transistor M1_gs2、C_gd2And the same is true. R in FIGS. 2(a) (b)_TIs the characteristic resistance of transistor M1.

When the operating frequency of the input matching circuit is relatively low, the input impedance Z_inSatisfies the following formula

In formula (1), G_vThe voltage gain of point B to point a.

When the input matching circuit works at a certain high frequency, the source degeneration inductance L₂And a capacitor C_gs1At resonance, then the input impedance Z_inIs expressed as

Z_in＝R_f1//Z′_in (2)

In the formula (2)//' is a parallel symbol, wherein

In the formula (3), j is an imaginary unit, and C is C_gs2、C_gdAnd C_LThe equivalent capacitance together is as shown in equation (4) due to C_LHigh frequency impedance and R_f2Is relatively small, so R_f2Are omitted in equation (3).

As can be seen from the formula (3)

When in useNamely, it isTime of flight

In the formula (5)//' is a parallel symbol, and an inductor L₁Parasitic resistance R of₁And R_f1Demonstrate the parallelly connected relation the utility model provides a matching circuit not only can realize that the ultra wide band of input matches and can also weaken high frequency department inductance parasitic resistance to noise figure's influence, optimizes low noise amplifier's noise performance.

FIG. 3 is an input matching parameter S of LNA of the high octave ultra-wideband matching circuit provided by the present invention₁₁And (5) simulating a curve. From the simulation results, the S of the LNA can be seen₁₁Less than-13 dB within DC-30 GHz, minimum value up to-19.6 dB, and excellent matching performance.

Fig. 4 is a NF simulation curve of LNA to which the present invention is applied. The simulation result shows that the NF of the LNA is less than 4.8dB within DC-30 GHz, the minimum value of the NF is less than 2.5dB, and the LNA presents good noise performance.

The above simulation results prove that the high octave ultra-wideband input matching circuit for the low noise amplifier provided by the utility model is effective.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

Claims (1)

1. A high octave ultra-wideband input matching circuit for a low noise amplifier is characterized by comprising a current multiplexing amplification unit, a first inductor, a second inductor, a resistor, a power supply end, a grounding end, an input end and an output end;

the current multiplexing amplification unit comprises an NMOS transistor and a PMOS transistor, wherein the grid electrode of the NMOS transistor is connected with the grid electrode of the PMOS transistor, the drain electrode of the NMOS transistor is connected with the drain electrode of the PMOS transistor and is connected to the output end together, and the source electrode of the PMOS transistor is connected with the power supply end;

the grid electrode of the NMOS transistor and/or the PMOS transistor is connected to one end of a first inductor, the other end of the first inductor is connected with the input end, the source electrode of the NMOS transistor is connected to one end of a second inductor, the other end of the second inductor is connected with the grounding end, and the resistor is connected between the input end and the output end in a bridging mode.