CN110113013A - A kind of high octave ultra wide band input matching circuit for low-noise amplifier - Google Patents
A kind of high octave ultra wide band input matching circuit for low-noise amplifier Download PDFInfo
- Publication number
- CN110113013A CN110113013A CN201910564675.1A CN201910564675A CN110113013A CN 110113013 A CN110113013 A CN 110113013A CN 201910564675 A CN201910564675 A CN 201910564675A CN 110113013 A CN110113013 A CN 110113013A
- Authority
- CN
- China
- Prior art keywords
- transistor
- wide band
- input matching
- ultra wide
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004891 communication Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- CWLVBFJCJXHUCF-RNPYNJAESA-N 4,8,12-trimethyltrideca 1,3,7,11-tetraene Chemical compound CC(C)=CCC\C(C)=C\CC\C(C)=C\C=C CWLVBFJCJXHUCF-RNPYNJAESA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000024241 parasitism Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The present invention relates to a kind of high octave ultra wide band input matching circuits for low-noise amplifier, belong to technical field of radio frequency integrated circuits.The input matching circuit includes current multiplexing amplifying unit, first inductance, second inductance and resistance, wherein current multiplexing amplifying unit includes the NMOS transistor and PMOS transistor that grid is connected with drain electrode, the grid that the input terminal of match circuit passes through the first inductance connection to NMOS(PMOS) transistor, NMOS(PMOS) output end of the drain electrode of transistor as match circuit, the source electrode of NMOS transistor passes through the second inductance connection to ground, the source electrode of PMOS transistor is connected to power supply in current multiplexing amplifying unit, feedback resistance is connected across between the input and output side of match circuit.Present invention can apply to high octave ultra wide band input matching is realized in the design of high octave ultra-wideband low-noise amplifier chip.
Description
Technical field
The invention belongs to low-noise amplifier (Low Noise Amplifier, abbreviation LNA) skills in RF IC
Art field particularly relates to a kind of high octave ultra wide band input matching circuit for low-noise amplifier.
Background technique
Modern wireless communication technology is constantly progressive a series of scientific and technological achievements expedited the emergence of and has widely penetrated into society
In the fields such as economy, military affairs, culture.Currently, Ka wave band spectral range below covers 2G/3G mobile communication, 4G-LTE is moved
Dynamic communication, the 5th third-generation mobile communication, navigation, satellite communication, IEEE 802.11a/b/g, high data rate (High-Data
Rate, HDR) the civilian wireless communication, Wi-Fi (Wireless Internet Access) frequency range such as ultra wide band, additionally it contained communication countermeasure, radar are detectd
Look into equal military communications frequency range.With the continuous upgrading of civilian mobile communication business, 2G/3G/4G-LET has been carried out on hardware
It is integrated, in addition to this, presence is still independent from each other between other application.But as wireless communication technique is into one
Step development, the polygon concept with multi-standard has caused the considerable concern of people, especially in Software Radio Design pair
Under the promotion of reusable hardware platform tight demand, the integrated concept of wireless communication electronics system multifunctional gradually gos deep into people
The heart.In order to allow single device that a variety of communication standards and a variety of different applications, working band is supported to be expanded into transceiver design
Only way.Because using single channel design high octave ultra wideband receiver front end manufacturing cost, chip size and
Power consumption is all better than the design scheme of multi-channel parallel comprehensively.
Due to the first order active circuit as radio receiver front end, LNA plays very in wireless receiving system
Important role: can be sufficiently amplified by its input signal and required signal-to-noise ratio is realized in output end.And opposite
For the LNA applied to multimode multi-standard, high octave ultra wide band input matching is one of the designing technique of wherein most critical, because
Not only determine that the port standing wave performance of LNA also has very big shadow to noise coefficient for high octave ultra wide band input matching circuit
It rings.S is usually used in design process11It is matched to measure the input of LNA, noise coefficient is generally with NF (Noise Figure) come table
Show.
In ultra wide band LNA design field, domestic and international project technical staff proposes some effective technical solutions.
Jonathan Borremans, Piet Wambacq, Charlotte Soens et al. in IEEE JSSC 2008,
The 2422-2433 pages of " Low-Area Active-Feedback Low-Noise Amplifer Design in Scaled
A kind of active feedback formula LNA is proposed in Digital CMOS ".Since to use only a Cascode mono- by the LNA proposed
Member cooperates active feedback technique, and the broadband input matching performance of 0~6.5GHz is shown under lower power consumption.But have
Source feed circuit limits high frequency matching and the noise of the LNA, it is difficult to realize that the high octave LNA to millimeter wave frequency band is designed.
Yo-Sheng Lin, Chang-Zhi Chen, Hong-Yu Yang et al. is in IEEE TMTT 2010,287-
" the Analysis and Design of a CMOS UWB LNA With Dual-RLC-Branch Wideband of page 296
A kind of double RLC branch input matching networks for LNA design are proposed in Input Matching Network ", the LNA's is defeated
Entering coupling bandwidth can achieve 2.6~11.9GHz, but this design scheme can not achieve the input matching of 1GHz and can deteriorate height
Frequency noise coefficient.
Hsien-Ku Chen, Yo-sheng Lin, Shey-Shi Lu are in IEEE TMTT 2010, and the 2092-2104 pages
" Analysis and Design of a 1.6-28GHz Compact Wideband LNA in 90-nm CMOS
A kind of π-type input matching network for LNA design is proposed in Using a π-Match Input Network ", the LNA's
Input coupling bandwidth can achieve 1.6~28GHz, but this design scheme is needed by means of a capacitor in parallel with input terminal
It realizes, the introducing of the capacitor can deteriorate the noise coefficient of LNA.
Yo-sheng Lin, Chien-Chin Wang, Guan-Lin Lee et al. is in IEEE MWCL 2014,200-
" the High-Performance Wideband Low-Noise Amplifer Using Enhanced π-Match of page 202
A kind of improvement π-type input matching network for LNA design, the input coupling bandwidth of the LNA are proposed in Input Network "
It can achieve 0~12GHz, overcome the unmatched problem of low frequency, the dead resistance of input stage inductance can still deteriorate the noise of LNA
Coefficient.
Yang Geliang, Xu Shilong, Du Keming et al. are in a kind of patent of invention " ultra wide band low-power consumption low noise amplification of automatic biasing
The input matching circuit that load and resistive degeneration are done based on active device is proposed in device " (ZL201510220400.8), it is defeated
Enter grade inductance and replaces can either realizing that ultra wide band matching in turn avoids the deterioration of noise coefficient with bonding line, but bond-wire inductor
Inductance value is not easy to control, and the input matching performance of different circuits may generate larger difference.
Summary of the invention
In view of this, the present invention proposes a kind of high octave ultra wide band input matching circuit for low-noise amplifier,
Its high octave ultra wide band matching problem for being able to solve LNA monolithic, while not having larger impact to noise coefficient again.
To achieve the goals above, the technical solution adopted by the present invention are as follows:
A kind of high octave ultra wide band input matching circuit for low-noise amplifier, including current multiplexing amplification are single
Member, the first inductor, the second inductor, resistor, power end, ground terminal, input terminal and output end；
The current multiplexing amplifying unit includes a NMOS transistor and a PMOS transistor, wherein NMOS crystal
The grid of pipe is connected with the grid of PMOS transistor, and the drain electrode of NMOS transistor is connected with the drain electrode of PMOS transistor and connects jointly
It is connected to the output end, the source electrode of PMOS transistor is connect with the power end；
NMOS transistor and/or the grid of PMOS transistor are connected to one end of the first inductor, the first inductor it is another
One end is connect with the input terminal, and the source electrode of NMOS transistor is connected to one end of the second inductor, the second inductor it is another
End is connect with the ground terminal, and the resistor is connected across between the input terminal and the output end.
The present invention compared with prior art, has the following beneficial effects:
1) present invention is for can be realized the high octave ultra wide band input matching of DC to millimeter wave frequency band when LNA design.
2) structure proposed by the invention is preposition by the feedback point in matching network, weakens parasitic in gate series inductance
Influence of the resistance to LNA noise coefficient.
Detailed description of the invention
Fig. 1 is a kind of high octave ultra wide band input matching circuit for low-noise amplifier in the embodiment of the present invention
Schematic diagram.
Fig. 2 (a) and Fig. 2 (b) is the small-signal equivalent circuit and its decomposition circuit of Fig. 1 respectively.
Fig. 3 is a kind of high octave ultra wide band input matching circuit for low-noise amplifier in the embodiment of the present invention
Input match parameter S11Simulation curve.
Fig. 4 is a kind of high octave ultra wide band input matching circuit use for low-noise amplifier in the embodiment of the present invention
NF simulation curve when LNA design.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
A kind of high octave ultra wide band input matching circuit for low-noise amplifier, including current multiplexing amplification are single
Member, the first inductor, the second inductor and feedback resistance.Wherein, current multiplexing amplifying unit is by stacking the NMOS crystal connected
Pipe and PMOS transistor composition, specific connection relationship are as follows: the grid of NMOS transistor is connected with the grid of PMOS transistor, NMOS
The drain electrode of transistor is connected to the output end of input matching circuit, the first inductor of grid after being connected with the drain electrode of PMOS transistor
Input terminal of the one end as input matching circuit, the other end of the first inductor is connected to above-mentioned NMOS (PMOS) transistor
Grid.The source electrode of NMOS transistor is connected with one end of the second inductor, the other end ground connection of the second inductor, PMOS transistor
Source electrode be connected to power supply.One end of feedback resistance is connected with the input terminal of match circuit, the output of the other end and match circuit
End is connected.
Specifically, as shown in Figure 1, a kind of high octave ultra wide band input matching circuit for low-noise amplifier,
It include: a NMOS transistor M1, a PMOS transistor M2, a resistance RfWith two inductance L1、L2, M1And M2Pin contain
Justice is as shown in the pin schematic diagram in figure.
Wherein, NMOS transistor M1With PMOS transistor M2Grid link together, NMOS transistor M1With PMOS crystal
Pipe M2Drain electrode also link together and the output end as input matching circuit.The input terminal and inductance L of match circuit1One
End is connected, inductance L1The other end be connected to NMOS transistor M1With PMOS transistor M2Grid.NMOS transistor M1Source electrode
It is connected to inductance L2One end, inductance L2The other end ground connection.PMOS transistor M2Source electrode be connected to power supply VDC.Resistance RfAcross
It connects between input and output end.
It is needed when carrying out Match circuits in view of inductance L1Non-ideal characteristic, it comprises dead resistance R1.This
Outside, the input parasitism C of late-class circuitLAlso the input of LNA can be matched and generates certain influence, it is also desirable in Match circuits
It accounts for.
Fig. 2 (a) is the small-signal equivalent circuit of Fig. 1, wherein containing above-mentioned R1And CL, Fig. 2 (b) is to Fig. 2's (a)
It further decomposes, resistance RfIt is decomposed into resistance Rf1With resistance Rf2.ω is defined as signal angular frequency, then in Fig. 2 (a) and (b)
ωT1≈gm1/Cgs1It is the characteristic angular frequency of transistor M1, gm1It is the mutual conductance of transistor M1, Cgs1It is the grid source parasitism of transistor M1
Capacitor, in addition, Cgd1It is the gate-drain parasitic capacitances of transistor M1, Cgs2、Cgd2Deng similarly.R in Fig. 2 (a) (b)TFor transistor M1
Featured resistance.
When the working frequency of input matching circuit is relatively low, input impedance ZinMeet following formula
G in formula (1)vIt is B point to the voltage gain of A point.
When input matching circuit work in certain higher frequency, source degeneracy inductance L2With capacitor Cgs1Resonance, then input impedance
ZinExpression formula be
Zin=Rf1//Z′in (2)
" // " is symbol in parallel in formula (2), wherein
J is imaginary unit, C C in formula (3)gs2、CgdWith CLEquivalent capacity together, as shown in formula (4), due to CL's
High-frequency resistance and Rf2Compared to very little, so Rf2It is ignored in formula (3).
It can be seen that by formula (3)
WhenI.e.When
" // " is symbol in parallel, inductance L in formula (5)1Dead resistance R1With Rf1Relationship in parallel is showed, shows this hair
The ultra wide band matching that input not only may be implemented in the match circuit of bright proposition can also weaken high frequency treatment inductance parasitic resistance to noise
The influence of coefficient optimizes the noiseproof feature of low-noise amplifier.
Fig. 3 is the input match parameter S for applying the LNA of high octave ultra wide band match circuit proposed by the invention11
Simulation curve.From simulation result it can be seen that the S of the LNA11It is less than -13dB within DC~30GHz, minimum value reaches -
19.6dB shows good matching performance.
Fig. 4 is the NF simulation curve for applying the LNA of high octave ultra wide band match circuit proposed by the invention.From imitative
True result can be seen that the NF of the LNA is less than 4.8dB within DC~30GHz, and minimum value is less than 2.5dB, shows good
Noiseproof feature.
Above-mentioned simulation result confirms a kind of high octave ultra-wide for low-noise amplifier provided by the present invention
Band input matching circuit is effective.
Although the present invention is shown and has been described by reference to its certain preferred embodiment, those skilled in the art
Member is it should be understood that without departing from the spirit and scope of the present invention, form being carried out to it and the various of details being repaired
Change.
Claims (1)
1. a kind of high octave ultra wide band input matching circuit for low-noise amplifier, which is characterized in that multiple including electric current
With amplifying unit, the first inductor, the second inductor, resistor, power end, ground terminal, input terminal and output end；
The current multiplexing amplifying unit includes a NMOS transistor and a PMOS transistor, wherein NMOS transistor
Grid is connected with the grid of PMOS transistor, and the drain electrode of NMOS transistor is connected and is commonly connected to the drain electrode of PMOS transistor
The output end, the source electrode of PMOS transistor are connect with the power end；
NMOS transistor and/or the grid of PMOS transistor are connected to one end of the first inductor, the other end of the first inductor
Connect with the input terminal, the source electrode of NMOS transistor is connected to one end of the second inductor, the other end of the second inductor with
The ground terminal connection, the resistor are connected across between the input terminal and the output end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910564675.1A CN110113013B (en) | 2019-06-27 | 2019-06-27 | High octave ultra-wideband input matching circuit for low noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910564675.1A CN110113013B (en) | 2019-06-27 | 2019-06-27 | High octave ultra-wideband input matching circuit for low noise amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110113013A true CN110113013A (en) | 2019-08-09 |
| CN110113013B CN110113013B (en) | 2024-03-22 |
Family
ID=67495810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910564675.1A Active CN110113013B (en) | 2019-06-27 | 2019-06-27 | High octave ultra-wideband input matching circuit for low noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110113013B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114679137A (en) * | 2022-03-03 | 2022-06-28 | 天津大学 | Ultra-wideband noise cancellation low-noise amplifier |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080048591A (en) * | 2006-11-29 | 2008-06-03 | 엘지전자 주식회사 | Wide-band low noise amplifier using current mirror |
| CN101494441A (en) * | 2008-01-24 | 2009-07-29 | 三星电子株式会社 | Wideband low noise amplifier |
| CN101656516A (en) * | 2009-07-23 | 2010-02-24 | 复旦大学 | Full-difference CMOS ultra wide band low-noise amplifier |
| CN101895265A (en) * | 2010-08-24 | 2010-11-24 | 复旦大学 | Full differential CMOS multimode low-noise amplifier |
| KR101105380B1 (en) * | 2010-08-31 | 2012-01-16 | 한국과학기술원 | Cmos low noise amplifier simultaneously achieving minimized noise and input power matching, and radio receiver |
| CN102946230A (en) * | 2012-10-31 | 2013-02-27 | 中国科学技术大学 | Ultra-wide band low-noise single-ended input and differential output amplifier |
| CN104779919A (en) * | 2015-05-04 | 2015-07-15 | 中国电子科技集团公司第五十四研究所 | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) |
| CN107592082A (en) * | 2017-09-26 | 2018-01-16 | 上海华虹宏力半导体制造有限公司 | A kind of bimodulus double frequency secondary current is multiplexed low-noise amplifier |
| CN107612305A (en) * | 2017-11-10 | 2018-01-19 | 王子豪 | The method of preposition quasi- Z sources lifting switch power supply electric work efficiency |
| CN209844918U (en) * | 2019-06-27 | 2019-12-24 | 中国电子科技集团公司第五十四研究所 | High-octave ultra-wideband input matching circuit for low-noise amplifier |
-
2019
- 2019-06-27 CN CN201910564675.1A patent/CN110113013B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080048591A (en) * | 2006-11-29 | 2008-06-03 | 엘지전자 주식회사 | Wide-band low noise amplifier using current mirror |
| CN101494441A (en) * | 2008-01-24 | 2009-07-29 | 三星电子株式会社 | Wideband low noise amplifier |
| CN101656516A (en) * | 2009-07-23 | 2010-02-24 | 复旦大学 | Full-difference CMOS ultra wide band low-noise amplifier |
| CN101895265A (en) * | 2010-08-24 | 2010-11-24 | 复旦大学 | Full differential CMOS multimode low-noise amplifier |
| KR101105380B1 (en) * | 2010-08-31 | 2012-01-16 | 한국과학기술원 | Cmos low noise amplifier simultaneously achieving minimized noise and input power matching, and radio receiver |
| CN102946230A (en) * | 2012-10-31 | 2013-02-27 | 中国科学技术大学 | Ultra-wide band low-noise single-ended input and differential output amplifier |
| CN104779919A (en) * | 2015-05-04 | 2015-07-15 | 中国电子科技集团公司第五十四研究所 | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) |
| CN107592082A (en) * | 2017-09-26 | 2018-01-16 | 上海华虹宏力半导体制造有限公司 | A kind of bimodulus double frequency secondary current is multiplexed low-noise amplifier |
| CN107612305A (en) * | 2017-11-10 | 2018-01-19 | 王子豪 | The method of preposition quasi- Z sources lifting switch power supply electric work efficiency |
| CN209844918U (en) * | 2019-06-27 | 2019-12-24 | 中国电子科技集团公司第五十四研究所 | High-octave ultra-wideband input matching circuit for low-noise amplifier |
Non-Patent Citations (1)
| Title |
|---|
| MEYSAM AZIMI ROEIN: "Design and analysis of a 3.1–10.6 GHz UWB low noise amplifier with current reused technique", 2019 5TH CONFERENCE ON KNOWLEDGE BASED ENGINEERING AND INNOVATION (KBEI), pages 30 - 35 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114679137A (en) * | 2022-03-03 | 2022-06-28 | 天津大学 | Ultra-wideband noise cancellation low-noise amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110113013B (en) | 2024-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107332517B (en) | High-linearity broadband stacked low-noise amplifier based on gain compensation technology | |
| CN106712725A (en) | Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit | |
| CN113114116B (en) | Radio frequency low noise amplifier | |
| CN110034738B (en) | Ultra-wideband low-noise amplifier based on improved impedance matching network | |
| CN216390924U (en) | Low-noise amplifier and radio frequency chip of ultra-wideband communication standard | |
| CN113067552A (en) | Low-noise amplifier and radio frequency front-end circuit | |
| CN206195723U (en) | Ultra wide band high -gain low -noise amplifier based on monolithic microwave integrated circuit | |
| CN109167578A (en) | A kind of ultra-wideband low-noise amplifier with active inductance | |
| Chen et al. | A wideband LNA based on current-reused CS-CS topology and gm-boosting technique for 5G application | |
| CN109525203B (en) | Intermediate frequency amplifier based on GaAs pHEMT process | |
| CN117639683A (en) | Balun-based high-OIP 2 balance amplifier | |
| CN116094468B (en) | Low noise amplifier and ultra-wideband receiver | |
| CN116865691A (en) | Ultra-wideband low noise amplifier with bandwidth reconfigurable technology | |
| CN110113013A (en) | A kind of high octave ultra wide band input matching circuit for low-noise amplifier | |
| Li et al. | A novel design approach for GHz CMOS low noise amplifiers | |
| Bhuiyan et al. | CMOS low noise amplifier design trends towards millimeter-wave IoT sensors | |
| CN209844918U (en) | High-octave ultra-wideband input matching circuit for low-noise amplifier | |
| CN211063579U (en) | X-waveband low-noise amplifier | |
| Datta et al. | A gain boosted fully concurrent dual-band interstage matched LNA operating in 900 MHz/2.4 GHz with sub-2dB Noise Figure | |
| CN113067554A (en) | Ka frequency band low noise amplifier realized based on CMOS | |
| Luo et al. | A 21-41 GHz Compact Wideband Low-Noise Amplifier Based on Transformer-Feedback Technique in 65-nm CMOS | |
| CN212163278U (en) | Ultra-wideband low-noise amplifier and feedback pre-input stage circuit thereof | |
| CN218387444U (en) | Broadband high-gain low-noise amplifier | |
| CN115149911B (en) | Ultra-wideband front-end chip, control method and design method | |
| CN116996029B (en) | 6GHz to 18GHz ultra-wideband high-performance low-noise amplifier chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |