CN211063579U - X-waveband low-noise amplifier - Google Patents
X-waveband low-noise amplifier Download PDFInfo
- Publication number
- CN211063579U CN211063579U CN202021078831.8U CN202021078831U CN211063579U CN 211063579 U CN211063579 U CN 211063579U CN 202021078831 U CN202021078831 U CN 202021078831U CN 211063579 U CN211063579 U CN 211063579U
- Authority
- CN
- China
- Prior art keywords
- stage
- capacitor
- resistor
- inductor
- amplifying circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses an X-waveband low-noise amplifier, which carries out impedance matching of radio frequency input signals through an input impedance matching network and reduces input return loss; the amplification stage is divided into three stages, and the system noise is determined by the first stage, so that the first stage amplification circuit amplifies under the condition of optimal noise impedance matching, and the noise of the whole machine is minimized; the second-stage amplifying circuit works under the condition of optimal conjugate impedance matching, so that the power gain is maximum; and the third-stage amplifying circuit works under the condition of optimal output impedance matching, so that the return loss of the output end is minimized, and the amplification of the X-band radio-frequency signal with high gain and low noise coefficient is realized.
Description
Technical Field
The utility model relates to a radio frequency integrated circuit field, concretely relates to X wave band low noise amplifier.
Background
According to the IEEE 521-2002 standard, the X band is a radio band with a frequency of 8-12GHz, which belongs to the microwave spectrum and is commonly used as an operating band for airborne radar and satellite communication.
Because the frequency of the X wave band is extremely high, the wavelength is only 25mm-37.5mm, and the size is often smaller than that of a common circuit board. When the signal wavelength is close to or smaller than the circuit size, the conventional lumped parameter circuit design method basically fails, and the conventional electronic components also fail.
For such radio frequency microwave circuits, not only the influence of noise but also the return loss on the transmission line need to be considered in the design process; in the basic component type selection, conventional BJTs and MOSFETs fail due to the factors such as the mobility of charged particles, parasitic capacitance and parasitic inductance; it is obvious that the normal printed circuit board process also fails completely. Therefore, the design of the key components of the X-band must depend on the heterojunction doping type semiconductor device with good radio frequency characteristics, and the devices such as the resistor and the capacitor must also be monocrystalline integrated on-chip resistors and capacitors, that is, the microelectronic process must be used, and the key components of the X-band are designed in the category of the integrated circuit field.
Because the related research of the radio frequency integrated circuit is not popularized at present, the performance of the low noise amplifier of the X wave band can not be obviously improved all the time, and the low noise amplifier is mainly limited by three major influence factors of input end return loss, output end return loss and noise coefficient.
SUMMERY OF THE UTILITY MODEL
Not enough to the above-mentioned among the prior art, the utility model provides a pair of X wave band low noise amplifier has solved the problem that traditional technique can't effectively restrain input return loss, output return loss and noise figure.
In order to achieve the above object, the utility model discloses a technical scheme be: an X-band low noise amplifier comprising: the circuit comprises an input impedance matching network, a first-stage amplifying circuit, a first inter-stage matching network, a second-stage amplifying circuit, a second inter-stage matching network and a third-stage amplifying circuit;
the power supply end of the first-stage amplifying circuit is respectively connected with the power supply end of the second-stage amplifying circuit and the power supply end of the third-stage amplifying circuit and serves as a VDD end of the X-band low-noise amplifier; the output end of the input impedance matching network is connected with the input end of the first-stage amplifying circuit, and the input end of the input impedance matching network is used as the input end Vin of the X-band low-noise amplifier and is used for performing impedance matching on a radio-frequency input signal; the output end of the first-stage amplifying circuit is connected with the input end of the first inter-stage matching network and is used for carrying out optimal noise impedance matching amplification; the bias voltage output end VB2 of the first-stage amplifying circuit is respectively connected with the bias voltage input end VB2 of the second-stage amplifying circuit and the bias voltage input end VB2 of the third-stage amplifying circuit; the output end of the first-stage matching network is connected with the input end of the second-stage amplifying circuit and is used for performing impedance matching between the output end of the first-stage amplifying circuit and the input end of the second-stage amplifying circuit; the output end of the second-stage amplifying circuit is connected with the input end of the second-stage matching network and used for carrying out optimal conjugate impedance matching amplification so as to realize maximum power gain; the output end of the second-stage matching network is connected with the input end of the third-stage amplifying circuit and is used for performing impedance matching between the output end of the second-stage amplifying circuit and the input end of the third-stage amplifying circuit; the output end of the third-stage amplification circuit is used as the output end Vout of the X-band low-noise amplifier and used for carrying out optimal output impedance matching amplification so as to reduce the reflection coefficient of the output end and realize optimal power output.
Further, the input impedance matching network comprises a capacitor C1, an inductor L1 and a grounding capacitor C2;
one end of the capacitor C1 is used as the input end of the input impedance matching network, the other end of the capacitor C1 is connected with one end of the inductor L1, and the other end of the inductor L1 is connected with the grounding capacitor C2 and is used as the output end of the input impedance matching network.
The first-stage amplifying circuit further comprises a current mirror I1, an n-HEMT tube M1, a grounded capacitor C4, an n-HEMT tube M2, a grounded capacitor C3, a resistor R1, an inductor L2, a capacitor C5, a resistor R1, an n-HEMT tube M3, an n-HEMT tube M4, a grounded capacitor C6 and a grounded resistor R2;
one end of the current mirror I1 is connected with one end of an inductor L, one end of a capacitor C5 and one end of a resistor R1 and serves as a power supply end of the first-stage amplification circuit, the other end of the current mirror I1 is connected with a drain electrode of an n-HEMT tube M1, a grid electrode of the n-HEMT tube M1, a grounding capacitor C4 and a grid electrode of an n-HEMT tube M3, a drain electrode of the n-HEMT tube M2 is connected with a grid electrode of an n-HEMT tube M2, a grounding capacitor C3, one end of a resistor R1 and a source electrode of the n-HEMT tube M1 and serves as a bias voltage output end VB2 of the first-stage amplification circuit, a source electrode of the n-HEMT tube M3 is grounded, a drain electrode of the n-HEMT tube M3 is connected with the other end of the inductor L2, the other end of the capacitor C375 and the other end of the resistor R1 and serves as an output end of the first-stage amplification circuit, a gate electrode of the n-HEMT tube M4 is connected with a gate electrode of the resistor R1 and the first-stage amplification circuit.
Further, the first inter-stage matching network comprises a capacitor C7, an inductor L3 and a grounding capacitor C8;
one end of the capacitor C7 is used as an input end of the first inter-stage matching network, the other end of the capacitor C7 is connected with one end of the inductor L3, and the other end of the inductor L3 is connected with the grounding capacitor C8 and is used as an output end of the first inter-stage matching network.
The second stage amplifying circuit comprises a resistor R3, an n-HEMT tube M5, a grounded capacitor C9, a grounded resistor R4, an inductor L4, a capacitor C10 and a resistor R5;
one end of the inductor L is connected to one end of the capacitor C10 and one end of the resistor R5 respectively and serves as a power supply end of the second-stage amplification circuit, one end of the resistor R3 serves as a bias voltage input end VB2 of the second-stage amplification circuit, the gate of the n-HEMT tube M5 is connected to the other end of the resistor R3 and serves as an input end of the second-stage amplification circuit, the drain of the n-HEMT tube M5 is connected to the other end of the inductor L, the other end of the capacitor C10 and the other end of the resistor R5 respectively and serves as an output end of the second-stage amplification circuit, and the source of the n-HEMT tube M493 is connected to the ground capacitor C.
Further, the second inter-stage matching network comprises a capacitor C11, an inductor L5 and a grounding capacitor C12;
one end of the capacitor C11 is used as the input end of the second inter-stage matching network, the other end of the capacitor C11 is connected with one end of the inductor L5, and the other end of the inductor L5 is connected with the grounding capacitor C12 and is used as the output end of the second inter-stage matching network.
Further, the third-stage amplifying circuit comprises a resistor R6, an n-HEMT tube M7, a grounding inductor L6, an n-HEMT tube M6, an inductor L7, a capacitor C13 and a resistor R7;
one end of the resistor R6 serves as a bias voltage input end VB2 of the third-stage amplification circuit, the grid electrode of the n-HEMT tube M7 is connected with the other end of the resistor R6 and serves as an input end of the third-stage amplification circuit, the source electrode of the n-HEMT tube M7 is connected with the grounding inductor L6, the drain electrode of the n-HEMT tube M6 is connected with one end of the inductor L, one end of the capacitor C13 and one end of the resistor R7 respectively and serves as an output end of the third-stage amplification circuit, and the grid electrode of the n-HEMT tube M6 is connected with the other end of the inductor L, the other end of the capacitor C13 and the other end of the resistor R7 respectively and serves as a power supply end of the third-stage.
The utility model has the advantages that: the impedance matching of the radio frequency input signal is carried out through the input impedance matching network, and the input return loss is reduced; the amplification stage is divided into three stages, and the system noise is determined by the first stage, so that the first stage amplification circuit amplifies under the condition of optimal noise impedance matching, and the noise of the whole machine is minimized; the second-stage amplifying circuit works under the condition of optimal conjugate impedance matching, so that the power gain is maximum; and the third-stage amplifying circuit works under the condition of optimal output impedance matching, so that the return loss of the output end is minimized, and the amplification of the X-band radio-frequency signal with high gain and low noise coefficient is realized.
Drawings
Fig. 1 is a circuit diagram of an X-band low noise amplifier.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and various changes will be apparent to those skilled in the art as long as they are within the spirit and scope of the present invention as defined and defined by the appended claims, and all inventions contemplated by the present invention are protected.
As shown in fig. 1, in an embodiment of the present invention, an X-band low noise amplifier includes: the circuit comprises an input impedance matching network, a first-stage amplifying circuit, a first inter-stage matching network, a second-stage amplifying circuit, a second inter-stage matching network and a third-stage amplifying circuit;
the power supply end of the first-stage amplifying circuit is respectively connected with the power supply end of the second-stage amplifying circuit and the power supply end of the third-stage amplifying circuit and serves as a VDD end of the X-band low-noise amplifier; the output end of the input impedance matching network is connected with the input end of the first-stage amplifying circuit, and the input end of the input impedance matching network is used as the input end Vin of the X-band low-noise amplifier and is used for performing impedance matching on a radio-frequency input signal; the output end of the first-stage amplifying circuit is connected with the input end of the first inter-stage matching network and is used for carrying out optimal noise impedance matching amplification; the bias voltage output end VB2 of the first-stage amplifying circuit is respectively connected with the bias voltage input end VB2 of the second-stage amplifying circuit and the bias voltage input end VB2 of the third-stage amplifying circuit; the output end of the first-stage matching network is connected with the input end of the second-stage amplifying circuit and is used for performing impedance matching between the output end of the first-stage amplifying circuit and the input end of the second-stage amplifying circuit; the output end of the second-stage amplifying circuit is connected with the input end of the second-stage matching network and used for carrying out optimal conjugate impedance matching amplification so as to realize maximum power gain; the output end of the second-stage matching network is connected with the input end of the third-stage amplifying circuit and is used for performing impedance matching between the output end of the second-stage amplifying circuit and the input end of the third-stage amplifying circuit; the output end of the third-stage amplification circuit is used as the output end Vout of the X-band low-noise amplifier and used for carrying out optimal output impedance matching amplification so as to reduce the reflection coefficient of the output end and realize optimal power output.
The input impedance matching network comprises a capacitor C1, an inductor L1 and a grounding capacitor C2;
one end of the capacitor C1 is used as the input end of the input impedance matching network, the other end of the capacitor C1 is connected with one end of the inductor L1, and the other end of the inductor L1 is connected with the grounding capacitor C2 and is used as the output end of the input impedance matching network.
The first-stage amplifying circuit comprises a current mirror I1, an n-HEMT tube M1, a grounded capacitor C4, an n-HEMT tube M2, a grounded capacitor C3, a resistor R1, an inductor L2, a capacitor C5, a resistor R1, an n-HEMT tube M3, an n-HEMT tube M4, a grounded capacitor C6 and a grounded resistor R2;
one end of the current mirror I1 is connected with one end of an inductor L, one end of a capacitor C5 and one end of a resistor R1 and serves as a power supply end of the first-stage amplification circuit, the other end of the current mirror I1 is connected with a drain electrode of an n-HEMT tube M1, a grid electrode of the n-HEMT tube M1, a grounding capacitor C4 and a grid electrode of an n-HEMT tube M3, a drain electrode of the n-HEMT tube M2 is connected with a grid electrode of an n-HEMT tube M2, a grounding capacitor C3, one end of a resistor R1 and a source electrode of the n-HEMT tube M1 and serves as a bias voltage output end VB2 of the first-stage amplification circuit, a source electrode of the n-HEMT tube M3 is grounded, a drain electrode of the n-HEMT tube M3 is connected with the other end of the inductor L2, the other end of the capacitor C375 and the other end of the resistor R1 and serves as an output end of the first-stage amplification circuit, a gate electrode of the n-HEMT tube M4 is connected with a gate electrode of the resistor R1 and the first-stage amplification circuit.
The first inter-stage matching network comprises a capacitor C7, an inductor L3 and a grounding capacitor C8;
one end of the capacitor C7 is used as an input end of the first inter-stage matching network, the other end of the capacitor C7 is connected with one end of the inductor L3, and the other end of the inductor L3 is connected with the grounding capacitor C8 and is used as an output end of the first inter-stage matching network.
The second stage amplifying circuit comprises a resistor R3, an n-HEMT tube M5, a grounded capacitor C9, a grounded resistor R4, an inductor L4, a capacitor C10 and a resistor R5;
one end of the inductor L is connected to one end of the capacitor C10 and one end of the resistor R5 respectively and serves as a power supply end of the second-stage amplification circuit, one end of the resistor R3 serves as a bias voltage input end VB2 of the second-stage amplification circuit, the gate of the n-HEMT tube M5 is connected to the other end of the resistor R3 and serves as an input end of the second-stage amplification circuit, the drain of the n-HEMT tube M5 is connected to the other end of the inductor L, the other end of the capacitor C10 and the other end of the resistor R5 respectively and serves as an output end of the second-stage amplification circuit, and the source of the n-HEMT tube M493 is connected to the ground capacitor C.
The second inter-stage matching network comprises a capacitor C11, an inductor L5 and a grounding capacitor C12;
one end of the capacitor C11 is used as the input end of the second inter-stage matching network, the other end of the capacitor C11 is connected with one end of the inductor L5, and the other end of the inductor L5 is connected with the grounding capacitor C12 and is used as the output end of the second inter-stage matching network.
The third stage of amplifying circuit comprises a resistor R6, an n-HEMT tube M7, a grounding inductor L6, an n-HEMT tube M6, an inductor L7, a capacitor C13 and a resistor R7;
one end of the resistor R6 serves as a bias voltage input end VB2 of the third-stage amplification circuit, the grid electrode of the n-HEMT tube M7 is connected with the other end of the resistor R6 and serves as an input end of the third-stage amplification circuit, the source electrode of the n-HEMT tube M7 is connected with the grounding inductor L6, the drain electrode of the n-HEMT tube M6 is connected with one end of the inductor L, one end of the capacitor C13 and one end of the resistor R7 respectively and serves as an output end of the third-stage amplification circuit, and the grid electrode of the n-HEMT tube M6 is connected with the other end of the inductor L, the other end of the capacitor C13 and the other end of the resistor R7 respectively and serves as a power supply end of the third-stage.
The X-band low-noise amplifier is a radio frequency integrated circuit based on a TSMC0.18umRF process.
The gate-drain interconnected n-HEMT tube M1 obtains a bias voltage VB1 under the drive of a current source I1; the gate-drain interconnected n-HEMT tube M2 obtains a bias voltage VB2 under the drive of a current source I1;
the first stage of the amplifier circuit comprises an n-HEMT tube M3 and an n-HEMT tube M4 which form a cascode configuration, an inductor L2, a capacitor C5 and a resistor R1 are used as loads, a resistor R2 and a capacitor C6 are used as source terminals for negative feedback, a bias voltage VB1 provides a driving voltage for an n-HEMT tube M3, and a bias voltage VB2 provides a direct current bias for an n-HEMT tube M4, wherein the n-HEMT tube M3/n-HEMT tube M4 is provided with a smaller width-length ratio, so that parasitic parameters are smaller, and a lower noise coefficient is realized;
the n-HEMT tube M5 works in a common source amplification configuration, an inductor L4, a capacitor C10 and a resistor R5 are used as loads, the capacitor C9 and the resistor R4 are used as source end negative feedback, a bias voltage VB2 provides direct current bias for the n-HEMT tube M5, a larger width-length ratio is set, a larger transconductance is obtained, and high gain is realized;
in the third stage of the amplifying circuit, an n-HEMT tube M6/M7 works in a cascode amplifying configuration, an inductor L7, a capacitor C13 and a resistor R7 are used as loads, a bias voltage VB2 provides direct current bias for an n-HEMT tube M7, and an n-HEMT tube M6 uses VDD of a power supply end as a driving voltage to obtain optimal output impedance and realize optimal power output.
The negative feedback function of the source end: frequency compensation is provided, the gain bandwidth product is enlarged, and the amplifier obtains good flatness.
To sum up, the utility model carries out impedance matching of the radio frequency input signal through the input impedance matching network, and reduces the input return loss; the amplification stage is divided into three stages, and the system noise is determined by the first stage, so that the first stage amplification circuit amplifies under the condition of optimal noise impedance matching, and the noise of the whole machine is minimized; the second-stage amplifying circuit works under the condition of optimal conjugate impedance matching, so that the power gain is maximum; and the third-stage amplifying circuit works under the condition of optimal output impedance matching, so that the return loss of the output end is minimized, and the amplification of the X-band radio-frequency signal with high gain and low noise coefficient is realized.
Claims (7)
1. An X-band low noise amplifier, comprising: the circuit comprises an input impedance matching network, a first-stage amplifying circuit, a first inter-stage matching network, a second-stage amplifying circuit, a second inter-stage matching network and a third-stage amplifying circuit;
the power supply end of the first-stage amplifying circuit is respectively connected with the power supply end of the second-stage amplifying circuit and the power supply end of the third-stage amplifying circuit and serves as a VDD end of the X-band low-noise amplifier; the output end of the input impedance matching network is connected with the input end of the first-stage amplifying circuit, and the input end of the input impedance matching network is used as the input end Vin of the X-band low-noise amplifier and is used for performing impedance matching on a radio-frequency input signal; the output end of the first-stage amplifying circuit is connected with the input end of the first inter-stage matching network and is used for carrying out optimal noise impedance matching amplification; the bias voltage output end VB2 of the first-stage amplifying circuit is respectively connected with the bias voltage input end VB2 of the second-stage amplifying circuit and the bias voltage input end VB2 of the third-stage amplifying circuit; the output end of the first-stage matching network is connected with the input end of the second-stage amplifying circuit and is used for performing impedance matching between the output end of the first-stage amplifying circuit and the input end of the second-stage amplifying circuit; the output end of the second-stage amplifying circuit is connected with the input end of the second-stage matching network and is used for carrying out optimal conjugate impedance matching amplification; the output end of the second-stage matching network is connected with the input end of the third-stage amplifying circuit and is used for performing impedance matching between the output end of the second-stage amplifying circuit and the input end of the third-stage amplifying circuit; and the output end of the third-stage amplification circuit is used as the output end Vout of the X-band low-noise amplifier and is used for carrying out optimal output impedance matching amplification.
2. The X-band low noise amplifier according to claim 1, wherein the input impedance matching network comprises a capacitor C1, an inductor L1, and a ground capacitor C2;
one end of the capacitor C1 is used as the input end of the input impedance matching network, the other end of the capacitor C1 is connected with one end of the inductor L1, and the other end of the inductor L1 is connected with the grounding capacitor C2 and is used as the output end of the input impedance matching network.
3. The X-band low noise amplifier according to claim 1, wherein the first stage amplifier circuit comprises a current mirror I1, an n-HEMT transistor M1, a grounded capacitor C4, an n-HEMT transistor M2, a grounded capacitor C3, a resistor R1, an inductor L2, a capacitor C5, a resistor R1, an n-HEMT transistor M3, an n-HEMT transistor M4, a grounded capacitor C6, and a grounded resistor R2;
one end of the current mirror I1 is connected with one end of an inductor L, one end of a capacitor C5 and one end of a resistor R1 and serves as a power supply end of the first-stage amplification circuit, the other end of the current mirror I1 is connected with a drain electrode of an n-HEMT tube M1, a grid electrode of the n-HEMT tube M1, a grounding capacitor C4 and a grid electrode of an n-HEMT tube M3, a drain electrode of the n-HEMT tube M2 is connected with a grid electrode of an n-HEMT tube M2, a grounding capacitor C3, one end of a resistor R1 and a source electrode of the n-HEMT tube M1 and serves as a bias voltage output end VB2 of the first-stage amplification circuit, a source electrode of the n-HEMT tube M3 is grounded, a drain electrode of the n-HEMT tube M3 is connected with the other end of the inductor L2, the other end of the capacitor C375 and the other end of the resistor R1 and serves as an output end of the first-stage amplification circuit, a gate electrode of the n-HEMT tube M4 is connected with a gate electrode of the resistor R1 and the first-stage amplification circuit.
4. The X-band low noise amplifier according to claim 1, wherein the first inter-stage matching network comprises a capacitor C7, an inductor L3, and a ground capacitor C8;
one end of the capacitor C7 is used as an input end of the first inter-stage matching network, the other end of the capacitor C7 is connected with one end of the inductor L3, and the other end of the inductor L3 is connected with the grounding capacitor C8 and is used as an output end of the first inter-stage matching network.
5. The X-band low noise amplifier according to claim 1, wherein the second stage amplifier circuit comprises a resistor R3, an n-HEMT transistor M5, a grounded capacitor C9, a grounded resistor R4, an inductor L4, a capacitor C10 and a resistor R5;
one end of the inductor L is connected to one end of the capacitor C10 and one end of the resistor R5 respectively and serves as a power supply end of the second-stage amplification circuit, one end of the resistor R3 serves as a bias voltage input end VB2 of the second-stage amplification circuit, the gate of the n-HEMT tube M5 is connected to the other end of the resistor R3 and serves as an input end of the second-stage amplification circuit, the drain of the n-HEMT tube M5 is connected to the other end of the inductor L, the other end of the capacitor C10 and the other end of the resistor R5 respectively and serves as an output end of the second-stage amplification circuit, and the source of the n-HEMT tube M493 is connected to the ground capacitor C.
6. The X-band low noise amplifier according to claim 1, wherein the second inter-stage matching network comprises a capacitor C11, an inductor L5, and a ground capacitor C12;
one end of the capacitor C11 is used as the input end of the second inter-stage matching network, the other end of the capacitor C11 is connected with one end of the inductor L5, and the other end of the inductor L5 is connected with the grounding capacitor C12 and is used as the output end of the second inter-stage matching network.
7. The X-band low noise amplifier according to claim 1, wherein the third stage amplifier circuit comprises a resistor R6, an n-HEMT transistor M7, a grounding inductor L6, an n-HEMT transistor M6, an inductor L7, a capacitor C13 and a resistor R7;
one end of the resistor R6 serves as a bias voltage input end VB2 of the third-stage amplification circuit, the grid electrode of the n-HEMT tube M7 is connected with the other end of the resistor R6 and serves as an input end of the third-stage amplification circuit, the source electrode of the n-HEMT tube M7 is connected with the grounding inductor L6, the drain electrode of the n-HEMT tube M6 is connected with one end of the inductor L, one end of the capacitor C13 and one end of the resistor R7 respectively and serves as an output end of the third-stage amplification circuit, and the grid electrode of the n-HEMT tube M6 is connected with the other end of the inductor L, the other end of the capacitor C13 and the other end of the resistor R7 respectively and serves as a power supply end of the third-stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021078831.8U CN211063579U (en) | 2020-06-12 | 2020-06-12 | X-waveband low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021078831.8U CN211063579U (en) | 2020-06-12 | 2020-06-12 | X-waveband low-noise amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211063579U true CN211063579U (en) | 2020-07-21 |
Family
ID=71596931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021078831.8U Active CN211063579U (en) | 2020-06-12 | 2020-06-12 | X-waveband low-noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211063579U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023040238A1 (en) * | 2021-09-16 | 2023-03-23 | 深圳飞骧科技股份有限公司 | Differential power amplifier |
-
2020
- 2020-06-12 CN CN202021078831.8U patent/CN211063579U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023040238A1 (en) * | 2021-09-16 | 2023-03-23 | 深圳飞骧科技股份有限公司 | Differential power amplifier |
| US11848650B2 (en) | 2021-09-16 | 2023-12-19 | Lansus Technologies Inc. | Differential power amplifier |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107332517B (en) | High-linearity broadband stacked low-noise amplifier based on gain compensation technology | |
| CN106712725A (en) | Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit | |
| CN216390924U (en) | Low-noise amplifier and radio frequency chip of ultra-wideband communication standard | |
| CN110034738B (en) | Ultra-wideband low-noise amplifier based on improved impedance matching network | |
| CN112019168A (en) | Power amplifier based on slow wave microstrip line matching network | |
| CN115765634A (en) | Power amplifying circuit | |
| CN112202408A (en) | Cascode radio frequency amplifier of GaN technology | |
| CN206195723U (en) | Ultra wide band high -gain low -noise amplifier based on monolithic microwave integrated circuit | |
| CN115208329A (en) | Passive transconductance-enhanced differential amplification circuit | |
| CN109391236B (en) | Signal amplification circuit and millimeter wave signal amplification circuit | |
| CN110708025A (en) | Power amplifier using diode compensation capacitor | |
| CN114362690A (en) | High-linearity ultra-wideband amplifier | |
| CN211063579U (en) | X-waveband low-noise amplifier | |
| CN112865717B (en) | High-gain power amplifier based on self-adaptive linearization technology | |
| CN111525894B (en) | Radio frequency low noise amplifier with broadband and high interference elimination capability | |
| KR101590605B1 (en) | Linear power amplifier for wireless transmitter | |
| CN109474243B (en) | Ultra-wideband low-noise amplifier | |
| CN114531121B (en) | Linear power amplifier insensitive to temperature | |
| CN113904635B (en) | High third-order intermodulation point field effect transistor radio frequency amplifier | |
| CN112003574B (en) | K-band CMOS efficient radio frequency power amplifier circuit | |
| CN209844918U (en) | High-octave ultra-wideband input matching circuit for low-noise amplifier | |
| CN114710127A (en) | W-waveband high-gain power amplifier circuit | |
| CN110113013B (en) | High octave ultra-wideband input matching circuit for low noise amplifier | |
| CN113346848A (en) | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit | |
| CN116996029B (en) | 6GHz to 18GHz ultra-wideband high-performance low-noise amplifier chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |