CN216162676U - Low-noise amplifier based on high-bandwidth millimeter wave tube core - Google Patents
Low-noise amplifier based on high-bandwidth millimeter wave tube core Download PDFInfo
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- CN216162676U CN216162676U CN202122014779.0U CN202122014779U CN216162676U CN 216162676 U CN216162676 U CN 216162676U CN 202122014779 U CN202122014779 U CN 202122014779U CN 216162676 U CN216162676 U CN 216162676U
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Abstract
The utility model discloses a low-noise amplifier based on a high-bandwidth millimeter wave tube core, which belongs to the technical field of low-noise amplifiers and comprises a signal input end, a TDK high-pass filter, an input matching circuit, an inter-stage matching circuit, an output matching circuit, a bias circuit, a Beidou band-pass filter, a signal output end, a linear voltage stabilizer and a power supply module; the low-noise amplifier is designed on the basis of a millimeter wave radio frequency transistor ABS655 capable of realizing high-bandwidth transmission, the static working point of a bias circuit is improved, a linear voltage stabilizing circuit is adopted to reduce power supply noise interference, an L-C matching network is used for realizing port impedance matching, and a Beidou acoustic meter filter is used for frequency selection so as to stabilize circuit parameters and reduce noise signal interference.
Description
Technical Field
The utility model belongs to the technical field of low-noise amplifiers, and particularly relates to a low-noise amplifier based on a high-bandwidth millimeter wave tube core.
Background
A Low Noise Amplifier (LNA) is positioned at the front end of a receiver and is a key unit module of a radio frequency receiver of a wireless communication system. With the continuous and rapid development of wireless communication, the noise performance requirements of industrial applications on radio frequency receivers are increasing day by day. A design scheme of a low-noise amplifier for receiving S-band signals by using 1 GHz-3 GHz radio-frequency transistors at the front end of an existing Beidou user receiver[2]Under the condition of meeting the power gain, the actual test noise performance is between 1.5 dB and 1.7 dB, and the feasibility is improved compared with the optimal noise performance.
The Beidou active positioning satellite system (RDSS) and short message communication in China are mainly applied to the S frequency band, when Beidou third satellite signals reach the ground, the minimum power level is-163 dBW, the maximum signal bandwidth is 20.46 MHz, and the signal center frequency is 2491.75 MHz. In order to capture the Beidou III main signal, the low noise amplifier is required to have large working bandwidth, working frequency is 2492 MHz, in-band gain is required to be more than 30 dB, noise coefficient is less than 1.3 dB, IIP3@2.49 GHz is more than 15 dBm, and input-output standing wave ratio is less than 1.5 dB.
The existing Beidou signal receiver adopts a low-noise amplification scheme on an S frequency band, the noise coefficient is 1.5 dB-1.7 dB under the condition of meeting the gain, and the noise performance can be further optimized.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the utility model is to provide a low noise amplifier based on a high-bandwidth millimeter wave tube core aiming at the defects of the background art, wherein the low noise amplifier is designed based on a millimeter wave radio frequency transistor ABS655 capable of realizing high-bandwidth transmission, the static working point of a bias circuit is improved, a linear voltage stabilizing circuit is adopted to reduce the noise interference of a power supply, an L-C matching network is utilized to realize port impedance matching, and a Beidou acoustic meter filter is utilized to select frequency so as to stabilize the circuit parameters and reduce the noise signal interference.
The utility model adopts the following technical scheme for solving the technical problems:
a low-noise amplifier based on a high-bandwidth millimeter wave tube core comprises a signal input end, a TDK high-pass filter, an input matching circuit, an inter-stage matching circuit, an output matching circuit, a bias circuit, a Beidou band-pass filter, a signal output end, a linear voltage regulator and a power supply module; the signal input end is connected with the input end of a TDK high-pass filter, the output end of the TDK high-pass filter is connected with the input end of an input matching circuit, the output end of the input matching circuit is connected with the input end of an interstage matching circuit, the output end of the output matching circuit is connected with the input end of a Beidou band-pass filter, the output end of the Beidou band-pass filter is connected with the signal output end, the output end of a bias circuit is respectively connected with the input matching circuit and the interstage matching circuit, and the power supply module is respectively connected with the TDK high-pass filter, the input matching circuit, the interstage matching circuit, the output matching circuit, the bias circuit and the Beidou band-pass filter through a linear voltage stabilizer and used for supplying required electric energy;
the linear voltage regulator comprises a 3.6V voltage input end, a 3V voltage output end, a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5 and a chip TPS79301, wherein the 3.6V voltage input end is respectively connected with one end of a first capacitor C1, one end of a second capacitor C2, a pin 1 of the chip TPS79301 and a pin 3 of the chip TPS79301, the other end of the first capacitor C1 and the other end of the second capacitor C2 are connected and grounded, a pin 6 of the chip TPS79301 is respectively connected with one end of a first resistor R1, one end of a fourth capacitor C4, one end of a fifth capacitor C5 and the 3V voltage output end, the other end of the fourth capacitor C4 and the other end of the fifth capacitor C5 are connected and grounded, the other end of the first resistor R1 and the other end of the pin 465 of the second resistor R795 and the other end of the chip TPS79301 are respectively connected with the resistor 3, the other end of the third resistor R3 is grounded, pin 4 of the chip TPS79301 is connected to one end of the third capacitor C3, and the other end of the third capacitor C3 is grounded.
As a further preferable solution of the low noise amplifier based on the high bandwidth millimeter wave die of the present invention, the chip model of the TDK high pass filter is DEA162300 HT.
As a further preferable scheme of the low-noise amplifier based on the high-bandwidth millimeter wave tube core, the chip model of the Beidou band-pass filter is NDF 9200.
As a further preferable scheme of the low noise amplifier based on the high-bandwidth millimeter wave die, the bias circuit includes a resistor RA, a resistor RB, a resistor RC, an NPN transistor, and a voltage VCC terminal, the voltage VCC terminal is connected to one end of the resistor RA, the other end of the resistor RA is respectively connected to one end of the resistor RB and one end of the resistor RC, the other end of the resistor RB is connected to a base of the NPN transistor, the other end of the resistor RC is connected to a collector of the NPN transistor, and an emitter of the NPN transistor is grounded.
As a further preferable scheme of the low noise amplifier based on the high-bandwidth millimeter wave tube core, the NPN triode employs an NPN broadband silicon germanium radio frequency transistor ABS 655.
As a further preferable solution of the low noise amplifier based on the high bandwidth millimeter wave die of the present invention, the input circuit employs a two-element L-shaped matching network for reducing return loss and improving gain and stability in frequency band.
Compared with the prior art, the utility model adopting the technical scheme has the following technical effects:
1. the utility model carries out low-noise amplifier design based on a millimeter wave radio frequency transistor ABS655 capable of high-bandwidth transmission, reduces power supply noise interference by improving the static working point of a bias circuit and adopting a linear voltage stabilizing circuit, realizes port impedance matching by utilizing an L-C matching network, and carries out frequency selection by utilizing a Beidou acoustic meter filter so as to stabilize circuit parameters and reduce noise signal interference.
2. The TPS79301 low-voltage-drop linear voltage regulator is additionally arranged in the circuit, the noise is low, the power supply voltage rejection ratio is high, the interference of an external power supply to the circuit can be effectively reduced, and the power supply is protected from reverse damage of radio frequency signals to a certain extent.
3. The matching circuit network of the utility model is divided into three parts of input matching, interstage matching and output matching, wherein the input matching adopts the best source reflection coefficient noise matching to obtain the minimum noise, and the input circuit adopts a double-element L-shaped matching network, which can effectively reduce the return loss and improve the stability in gain and frequency band.
Drawings
FIG. 1 is a schematic diagram of a low noise amplifier based on a high bandwidth millimeter wave die according to the present invention;
FIG. 2 is a circuit diagram of the bias circuit of the present invention;
fig. 3 is a circuit diagram of the linear regulator of the present invention.
Detailed Description
The technical scheme of the utility model is further explained in detail by combining the attached drawings:
the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention
A low-noise amplifier based on a high-bandwidth millimeter wave tube core comprises a signal input end, a TDK high-pass filter, an input matching circuit, an inter-stage matching circuit, an output matching circuit, a bias circuit, a Beidou band-pass filter, a signal output end, a linear voltage regulator and a power supply module; the signal input end is connected with the input end of a TDK high-pass filter, the output end of the TDK high-pass filter is connected with the input end of an input matching circuit, the output end of the input matching circuit is connected with the input end of an interstage matching circuit, the output end of the output matching circuit is connected with the input end of a Beidou band-pass filter, the output end of the Beidou band-pass filter is connected with the signal output end, the output end of a bias circuit is respectively connected with the input matching circuit and the interstage matching circuit, and the power supply module is respectively connected with the TDK high-pass filter, the input matching circuit, the interstage matching circuit, the output matching circuit, the bias circuit and the Beidou band-pass filter through a linear voltage stabilizer and used for supplying required electric energy. The utility model carries out low-noise amplifier design based on a millimeter wave radio frequency transistor ABS655 capable of high-bandwidth transmission, reduces power supply noise interference by improving the static working point of a bias circuit and adopting a linear voltage stabilizing circuit, realizes port impedance matching by utilizing an L-C matching network, and carries out frequency selection by utilizing a Beidou acoustic meter filter so as to stabilize circuit parameters and reduce noise signal interference. The Gain is more than 30 dB, the noise coefficient NF is less than 1.3 dB, and the IIP3 is more than 15 dBm under the broadband, so that the index design requirement of the front end of the Beidou third satellite navigation receiver is obviously optimized, and the method has a wide application prospect.
The chip model of the TDK high-pass filter is DEA162300 HT. And controlling the frequency insertion loss of more than 2.3 GHz to be less than 0.4 dB, basically inhibiting signals below a 2.3 GHz frequency band, and reserving a Beidou signal main frequency band.
The chip model of the Beidou band-pass filter is NDF9200, the maximum insertion loss between 2487 MHz and 2497 MHz is only 3 dB by adopting the Beidou band-pass filter NDF9200, and the interference is further reduced.
As shown in fig. 2, the bias circuit includes a resistor RA, a resistor RB, a resistor RC, an NPN transistor, and a voltage VCC terminal, the voltage VCC terminal is connected to one end of the resistor RA, the other end of the resistor RA is respectively connected to one end of the resistor RB and one end of the resistor RC, the other end of the resistor RB is connected to a base of the NPN transistor, the other end of the resistor RC is connected to a collector of the NPN transistor, and an emitter of the NPN transistor is grounded.
As shown in fig. 3, the linear regulator includes a 3.6V voltage input terminal, a 3V voltage output terminal, a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, and a chip TPS79301, wherein the 3.6V voltage input terminal is connected to one end of a first capacitor C1, one end of a second capacitor C1, a pin 1 of the chip TPS79301 and a pin 3 of the chip TPS79301, the other end of the first capacitor C1 and the other end of the second capacitor C2 are connected and grounded, the pin 6 of the chip TPS79301 is connected to one end of a first resistor R1, one end of a fourth capacitor C4, one end of a fifth capacitor C5 and the 3V voltage output terminal, the other end of a fourth capacitor C4 and the other end of the fifth capacitor C5 are connected and grounded, the other end of the first resistor R1 and the pin R6865 of the chip TPS79301 are connected, the other end of the second resistor R2 is connected to one end of the third resistor R3, the other end of the third resistor R3 is grounded, the pin 4 of the chip TPS79301 is connected to one end of the third capacitor C3, and the other end of the third capacitor C3 is grounded.
The NPN triode adopts an NPN broadband silicon germanium radio frequency transistor ABS 655. The NPN broadband silicon germanium radio frequency transistor ABS655 is adopted, the millimeter wave tube core covers 0-12 GHz, the gain is high, the noise is low, the linearity is good, and the NPN broadband silicon germanium radio frequency transistor ABS655 can be used for high-speed and low-noise application.
The input circuit adopts a double-element L-shaped matching network for reducing return loss and improving the stability in gain and frequency band.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the protection scope of the present invention. While the embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art.
Claims (6)
1. A low noise amplifier based on a high bandwidth millimeter wave die, characterized by: the high-pass filter circuit comprises a signal input end, a TDK high-pass filter, an input matching circuit, an interstage matching circuit, an output matching circuit, a bias circuit, a Beidou band-pass filter, a signal output end, a linear voltage stabilizer and a power supply module; the signal input end is connected with the input end of a TDK high-pass filter, the output end of the TDK high-pass filter is connected with the input end of an input matching circuit, the output end of the input matching circuit is connected with the input end of an interstage matching circuit, the output end of the output matching circuit is connected with the input end of a Beidou band-pass filter, the output end of the Beidou band-pass filter is connected with the signal output end, the output end of a bias circuit is respectively connected with the input matching circuit and the interstage matching circuit, and the power supply module is respectively connected with the TDK high-pass filter, the input matching circuit, the interstage matching circuit, the output matching circuit, the bias circuit and the Beidou band-pass filter through a linear voltage stabilizer and used for supplying required electric energy;
the linear voltage regulator comprises a 3.6V voltage input end, a 3V voltage output end, a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5 and a chip TPS79301, wherein the 3.6V voltage input end is respectively connected with one end of a first capacitor C1, one end of a second capacitor C2, a pin 1 of the chip TPS79301 and a pin 3 of the chip TPS79301, the other end of the first capacitor C1 and the other end of the second capacitor C2 are connected and grounded, a pin 6 of the chip TPS79301 is respectively connected with one end of a first resistor R1, one end of a fourth capacitor C4, one end of a fifth capacitor C5 and the 3V voltage output end, the other end of the fourth capacitor C4 and the other end of the fifth capacitor C5 are connected and grounded, the other end of the first resistor R1 and the other end of the pin 465 of the second resistor R795 and the other end of the chip TPS79301 are respectively connected with the resistor 3, the other end of the third resistor R3 is grounded, pin 4 of the chip TPS79301 is connected to one end of the third capacitor C3, and the other end of the third capacitor C3 is grounded.
2. A high bandwidth millimeter wave die based low noise amplifier according to claim 1, wherein: the chip model of the TDK high-pass filter is DEA162300 HT.
3. A high bandwidth millimeter wave die based low noise amplifier according to claim 1, wherein: the chip model of the Beidou band-pass filter is NDF 9200.
4. A high bandwidth millimeter wave die based low noise amplifier according to claim 1, wherein: the bias circuit comprises a resistor RA, a resistor RB, a resistor RC, an NPN triode and a voltage VCC end, wherein the voltage VCC end is connected with one end of the resistor RA, the other end of the resistor RA is respectively connected with one end of the resistor RB and one end of the resistor RC, the other end of the resistor RB is connected with a base electrode of the NPN triode, the other end of the resistor RC is connected with a collector electrode of the NPN triode, and an emitter electrode of the NPN triode is grounded.
5. The high-bandwidth millimeter wave die based low noise amplifier of claim 4, wherein: the NPN triode adopts an NPN broadband silicon germanium radio frequency transistor ABS 655.
6. A high bandwidth millimeter wave die based low noise amplifier according to claim 1, wherein: the input matching circuit adopts a double-element L-shaped matching network for reducing return loss and improving the stability in gain and frequency band.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122014779.0U CN216162676U (en) | 2021-08-25 | 2021-08-25 | Low-noise amplifier based on high-bandwidth millimeter wave tube core |
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| CN202122014779.0U CN216162676U (en) | 2021-08-25 | 2021-08-25 | Low-noise amplifier based on high-bandwidth millimeter wave tube core |
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