CN102324896A - Low-noise broadband amplifier with linearity compensation - Google Patents
Low-noise broadband amplifier with linearity compensation Download PDFInfo
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- CN102324896A CN102324896A CN201110192379A CN201110192379A CN102324896A CN 102324896 A CN102324896 A CN 102324896A CN 201110192379 A CN201110192379 A CN 201110192379A CN 201110192379 A CN201110192379 A CN 201110192379A CN 102324896 A CN102324896 A CN 102324896A
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Abstract
The invention belongs to the design field of radio frequency integrated circuits, which in particular discloses a low-noise broadband amplifier with linearity compensation. The circuit comprises an active feedback unit, a current multiplexing transconductance unit, a direct-current feedback unit and a low-power supply voltage offset unit with the linearity compensation, wherein the direct-current feedback unit is used for stabilizing working points; the active feedback unit realizes broadband input impendence matching; the current multiplexing transconductance unit uses one transistor complementary with a main transconductance unit to serve as the other transconductance unit to improve gain under the condition of the same power consumption; a direct-current feedback loop is used for stabilizing the working points of the circuit; and the low-power supply voltage offset unit with the linearity compensation has the function of linearity compensation under the condition of providing offset to the circuit. According to the low-noise broadband amplifier, the low-noise amplifier with high linearity can be obtained by costing lower power consumption by the CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology.
Description
Technical field
The invention belongs to technical field of radio frequency integrated circuits, be specifically related to a kind of low noise amplifier.
Background technology
The receiver front end of communication system generally includes low noise amplifier (LNA), frequency mixer (Mixer), variable gain amplifier (VGA) and some filters.As the first order of active circuit in the receiver, LNA need amplify input signal, reduces the noise of whole system, accomplishes the impedance matching with input terminal simultaneously, its performance usually give whole receiver performance setting the limit.
Traditional narrow-band receiver processing bandwidth is merely tens KHzs to the signal of several megahertzes, is with outer mirror image, spuious and noise can be by the good filtering of filter.Yet the development of current multi-mode communication has but proposed different system requirements.Handle in the system of multimode signal at needs, receiver must all have disposal ability to the signal that works in different frequency range, different bandwidth, and handles with respect to single mode signal, and its performance requirement is almost constant.A lot of systems use a plurality of submodules to each self mode, are utilized in to switch between submodule and realize multimode, have increased area of chip greatly like this, thereby have reduced output, increased cost.A kind of solution of high integration just is to use the framework of broadband receiver.This at first just requires LNA must have the characteristic of broadband signal amplification, wideband low noise and wideband impedance match.In addition, the development of high-speed data communication has proposed increasingly high requirement to the signal bandwidth of transmission data.According to Shannon-Hart example theorem, channel capacity is directly proportional with bandwidth.Use today that density is increasing, channel disturbance is serious at frequency spectrum, the method that improves transmission rate through the bandwidth that improves signal is by extensive reception and put into practice, like spread spectrum communication, and ultra broadband (UWB) communication or the like.Receiver front end with disposal ability of broadband signal is the basis that guarantees that these technology are achieved.A bandwidth reach 100,000,000 in addition the LNA of several GHzs in, the consideration that need be different with arrowband LNA except above-mentioned gain, noise and designing impedance matching, the linearity also becomes the key factor that influences broadband LNA performance.When bandwidth greatly to making secondary, three times even when more the harmonic wave of high order all is within the signal bandwidth, filter also becomes very limited to the improvement effect of the raising linearity.At this moment, need LNA self to have higher linearity, perhaps use the method for extra linearity compensation.
The instance of shown in Figure 1 is a traditional low noise amplifier based on active feedback.In this example, active feedback unit 110 has been forced a pressure drop greater than the gate source voltage of transistor M2 between the input and output node of amplifier, make this circuit be difficult to be applied to the low supply voltage occasion.And the active feedback that this circuit adopts belongs to nonlinear feedback, though the use of feedback resistance 102 can this circuit of partial linearization, the further raising of the linearity also need be by other method.
Summary of the invention
The object of the present invention is to provide a kind ofly self to have low noise amplifier linearity compensate function, that be fit to broadband application, and keep the gain and the noise characteristic of traditional low noise amplifier.
Wideband low noise amplifier provided by the invention comprises:
(1) main span is led the unit, converts input voltage to electric current;
(2) current multiplexing type transconductance cell, multiplexing main span is led the electric current of branch road, and the voltage-to-current conversion gain is provided;
(3) active feedback unit is used to feed back to said amplifier in, and the wideband impedance match function is provided;
(4) dc feedback unit is used for the stabilizing amplifier working point;
(5) the low supply voltage bias unit of band linearity compensation improves the linearity of said amplifier.
In the wideband low noise amplifier of the present invention, further comprise:
First end is connected to the capacitance of amplifier in;
First end is connected to first inductor of input capacitance second end;
With current multiplexing type transconductance cell parallel resistor device;
Be connected in second inductor between power supply and the current multiplexing type transconductance cell.
Among the present invention, described main span is led the unit, comprises that grid is connected to the first transistor of first inductor, second end, with the transistor seconds that source electrode is continuous with the first transistor drain electrode, grid is connected bias voltage source.
Among the present invention; Described active feedback unit; Comprise that the 4th transistor and one one end are connected to the resistor of its source electrode; This feedback adopts source follower structure, and the 4th transistorized grid links to each other with the output of amplifier, and the grid that its source electrode is led the first transistor of unit through source-electrode degradation resistance and main span links to each other.
Among the present invention, described current multiplexing type transconductance cell is used with main span and is led the 3rd complementary transistor of transistor types in the unit, and its grid is connected to the grid of the first transistor, and source electrode is connected to first end of second inductor.
Among the present invention, described dc feedback unit comprises at least one low pass filter and a comparator.
Among the present invention, the low supply voltage bias unit of described band linearity compensation when for low noise amplifier proper operation point being provided, comprises that at least one can the injecting voltage harmonic wave or the node of current harmonics.
Among the present invention, the low supply voltage bias unit of described band linearity compensation further is included as its voltage source that bias voltage is provided and injects the unit with the harmonic wave that produces harmonic wave.
Be connected input capacitance and main span lead first inductor between the unit and be connected power supply and current multiplexing type transconductance cell between second inductor, their participate in to accomplish the optimization of noise-frequency response characteristic; With current multiplexing type mutual conductance parallel resistor device,, and lead the load of unit as main span simultaneously for the mutual conductance of current multiplexing type is provided with rational working point.
The invention provides a kind of wideband impedance match and noise optimization method; Comprise: use active feedback technique to realize wideband impedance match; Utilize the transconductance cell that has the source-electrode degradation inductance to realize narrow band matching again, thereby the optimization of noise-frequency response characteristic is accomplished in the two combination.
Wherein, narrow band matching comprises first inductor, second inductor and is connected the electric capacity between the 3rd transistorized grid and the source electrode that this electric capacity can be capacitor or parasitic capacitance.
The present invention also provides a kind of linearity compensation method of using harmonic wave to inject, comprising: use to have biasing circuit and the corresponding harmonic wave generation circuit that harmonic wave injects node.
Harmonic wave wherein produces circuit and comprises that the input signal that utilizes low noise amplifier produces required harmonic wave and utilizes the output signal feedback of low noise amplifier to produce two kinds of methods of required harmonic wave.
The invention has the advantages that and kept arrowband LNA low noise, advantage that impedance matching property is good; Extra power consumption with minimum is a cost; Obtained a LNA who is suitable for broadband application; And provided the method for its corresponding noise optimization and linearity compensation, improved the integrated level of communication system receiver front end.
Description of drawings
Fig. 1 is for being depicted as traditional active feedback LNA circuit diagram.
Fig. 2 is a broadband according to an embodiment of the invention LNA circuit diagram.
Fig. 3 is a kind of embodiment sketch map that adopts input signal to produce the method for injecting harmonic wave according to the present invention.
Fig. 4 is a kind of embodiment sketch map that adopts the output signal feedback to produce the method for injecting harmonic wave according to the present invention.
Embodiment
Now will be with reference to the more concrete description the present invention of accompanying drawing.In order to help to understand the present invention, will be referred to the details of a lot of circuit in the following description, yet the present invention can realize, be not limited to details described herein and accompanying drawing according to multiple different form.
Be illustrated in figure 2 as sketch map according to an exemplary wideband low noise amplifier 200 of the present invention.Low noise amplifier 200 comprises low supply voltage bias unit 250, harmonic wave injection unit 260 and the input block capacitor C that main span is led unit 210, current multiplexing type transconductance cell 220, active feedback unit 230, dc feedback unit 240, is with the linearity to compensate
0, the first inductor L
0, the second inductor L
1And resistor R
LWherein main span is led nmos pass transistor M1 and the M2 that unit 210 comprises that cascade connects, and current multiplexing type transconductance cell 220 comprises PMOS transistor M3, and active feedback unit 230 comprises transistor M4 and resistor R
F, dc feedback unit 240 comprises the reference voltage source V of low pass filter 204, comparator 205 and comparator
Ref, the low supply voltage bias unit 250 of band linearity compensation comprises transistor M5 and M6, feedback resistance R
F, and block capacitor C
1
Input signal (V
In) through block capacitor C
0With inductor L
0The grid (nodes X) that is added to transistor M1 and M3 afterwards amplifies, the output signal (V after being exaggerated
Out) pass through transistor M4 and resistor R again
FFeed back to nodes X.This electric current-current feedback has reduced the input resistance that X is ordered, and makes it carry out impedance matching with the signal source internal resistance.The input resistance R of nodes X
XCan be expressed as:
Yet from the consideration of aspects such as noise and gain, the size of transistor M1 and M3 is all bigger usually, and this makes nodes X have very big parasitic capacitance over the ground, and impedance diminishes when high frequency.Inductor L
0The bandwidth of impedance matching has been expanded in the reduction of input impedance when just in time having compensated this high frequency.Except the wideband impedance match that active feedback is introduced, L
0-M3-L
1The utilization that has constituted normal use among the traditional narrow LNA has the matching network of the transconductance cell generation resonance of source-electrode degradation inductance; The contribution for impedance matching in the LNA of broadband of this matching network is little; But its existence can change the noise transfer function of broadband LNA, for the frequency response characteristic of optimizing noise factor provides the more freedom degree.About optimizing the noise factor of arrowband LNA; D. Shadffer and T. Lee are at JSSC 1997; Provided detailed elaboration in " A 1.5-V; 1.5-GHz CMOS Low Noise Amplifier " in the 745-759 page or leaf, can use here similar method obtain its to broadband LNA The noise.
Except the noise optimization function is provided, inductor L
1As the load of cascode stage M1-M2, the bandwidth expanded function is provided simultaneously, at this moment, R
LAlso load provides the function that current conversion is become voltage as M1-M2.R
LThe another one effect be the flow through electric current of M3 of splitter section, make M3 that rational mutual conductance arranged, guarantee that the working point is correct.
Active feedback scheme shown in Figure 1 is not suitable for the application of low supply voltage; Adopted the bias unit 250 that is applicable to the low supply voltage occasion among Fig. 2, this method use from nodes X and Y respectively the mode of injection current reduced the voltage margin of active feedback circuit consumption.In order to stablize the voltage of X node, make circuit have suitable working point, current source M6 uses the automatic biasing mode, utilizes dc feedback unit 240 that its grid voltage is provided.Dc feedback unit 240 carries out the quiescent voltage value that filtering obtains output through pair amplifier output signal, makes it and reference level (V
Ref) relatively,, accomplish FEEDBACK CONTROL with the output control M6 grid level of comparator.In addition, the grid of M6 also is connected to a harmonic wave through capacitance and injects the unit, and this harmonic wave injects the unit plays linearity compensation through the mode of injecting a harmonic wave effect.Carry out linearity compensation about using harmonic wave to inject; S. Lou and H. Luong are at JSSC 2008; " A Linearization Technique for RF Receiver Front-End Using Second-Order-Intermodulation Injection " in the 2404-2412 page or leaf had comparatively detailed elaboration, and used herein is identical principle.
Harmonic wave injects among the present invention can have dual mode to carry out, and first kind is the input signal that directly uses LNA, when producing input, also produces required harmonic signal, as shown in Figure 3.From the consideration of succinct and readability, only having drawn here produces the circuit part relevant with injection with harmonic wave, and other part physical circuit is same as shown in Figure 2.In Fig. 3, signal source 310 is unit that input signal is provided to LNA, can be equipment such as tester or antenna.Signal source is except directly being added to input capacitance C with signal
0Outside going up, also make signal pass through a filter 320 harmonious wave generation circuits 330, pass through capacitance C then
1Be added to the grid of M6, accomplish harmonic wave and inject.Second kind of method that produces harmonic wave is as shown in Figure 4.Here, the output signal (V of low noise amplifier
Out) after wave filter 420 harmonious wave generation circuits 430, through capacitance C
1Feed back to the grid of M6, accomplish the injection of harmonic wave.These two kinds of methods are different for the requirement that harmonic wave produces circuit, but have identical effect for the parameters such as third order intermodulation point that improve circuit.
Although the present invention that combined case description of the present invention those skilled in the art will recognize that the present invention is not limited to described instance, can make amendment and change in spirit that does not break away from accompanying claims and scope.Therefore, this specification should be regarded as indicative and nonrestrictive.
Claims (8)
1. wideband low noise amplifier is characterized in that comprising:
(1) main span is led the unit, converts input voltage to electric current;
(2) current multiplexing type transconductance cell, multiplexing main span is led the electric current of branch road, and the voltage-to-current conversion gain is provided;
(3) active feedback unit is used to feed back to said amplifier in, and the wideband impedance match function is provided;
(4) dc feedback unit is used for the stabilizing amplifier working point;
(5) the low supply voltage bias unit of band linearity compensation improves the linearity of said amplifier.
2. wideband low noise amplifier as claimed in claim 1 is characterized in that further comprising:
First end is connected to the capacitance of amplifier in;
First end is connected to first inductor of input capacitance second end;
With current multiplexing type transconductance cell parallel resistor device;
Be connected in second inductor between power supply and the current multiplexing type transconductance cell.
3. according to claim 1 or claim 2 wideband low noise amplifier; It is characterized in that described main span leads the unit; Comprise that grid is connected to the first transistor of first inductor, second end, with the transistor seconds that source electrode is continuous with the first transistor drain electrode, grid is connected bias voltage source.
4. like the described wideband low noise amplifier of one of claim 1-3; It is characterized in that described active feedback unit; Comprise that the 4th transistor and one one end are connected to the resistor of its source electrode; This feedback adopts source follower structure, and the 4th transistorized grid links to each other with the output of amplifier, and the grid that its source electrode is led the first transistor of unit through source-electrode degradation resistance and main span links to each other.
5. like the described wideband low noise amplifier of one of claim 1-4; It is characterized in that described current multiplexing type transconductance cell; Use with main span and lead the 3rd complementary transistor of transistor types in the unit; Its grid is connected to the grid of the first transistor, and source electrode is connected to first end of second inductor.
6. like the described wideband low noise amplifier of one of claim 1-5, it is characterized in that described dc feedback unit, comprise at least one low pass filter and a comparator.
7. like the described wideband low noise amplifier of one of claim 1-6; The low supply voltage bias unit that it is characterized in that described band linearity compensation; When proper operation point being provided, comprise that at least one can the injecting voltage harmonic wave or the node of current harmonics for low noise amplifier.
8. wideband low noise amplifier as claimed in claim 7 is characterized in that the low supply voltage bias unit that the described band linearity compensates, and further is included as its voltage source that bias voltage is provided and injects the unit with the harmonic wave that produces harmonic wave.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110192379.7A CN102324896B (en) | 2011-07-11 | 2011-07-11 | Low-noise broadband amplifier with linearity compensation |
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| CN201110192379.7A CN102324896B (en) | 2011-07-11 | 2011-07-11 | Low-noise broadband amplifier with linearity compensation |
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| CN102324896A true CN102324896A (en) | 2012-01-18 |
| CN102324896B CN102324896B (en) | 2014-07-09 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104617905A (en) * | 2013-11-01 | 2015-05-13 | 恩智浦有限公司 | RF amplifier and RF amplification method |
| CN105305981A (en) * | 2015-11-30 | 2016-02-03 | 电子科技大学 | Linear broadband low noise amplifier |
| CN106788324A (en) * | 2016-12-28 | 2017-05-31 | 上海集成电路研发中心有限公司 | A kind of loop feedback active pull-up |
| CN110212870A (en) * | 2018-10-31 | 2019-09-06 | 西安电子科技大学 | A kind of integrated circuit of current multiplexing type gm-boost low-noise amplifier |
| CN114793093A (en) * | 2022-04-28 | 2022-07-26 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
| CN114844473A (en) * | 2022-04-11 | 2022-08-02 | 电子科技大学 | Double-control-position variable gain amplifier adopting compensation capacitor technology |
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| CN1524340A (en) * | 2001-05-25 | 2004-08-25 | �����ɷ� | High-bandwidth low-voltage gain cell and voltage follower having an enhanced transconductance |
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2011
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| CN1524340A (en) * | 2001-05-25 | 2004-08-25 | �����ɷ� | High-bandwidth low-voltage gain cell and voltage follower having an enhanced transconductance |
| US20050001687A1 (en) * | 2001-11-07 | 2005-01-06 | Versteegen Marius Gerardus Jacobus | Power amplifier module with distortion compensation |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617905A (en) * | 2013-11-01 | 2015-05-13 | 恩智浦有限公司 | RF amplifier and RF amplification method |
| CN105305981A (en) * | 2015-11-30 | 2016-02-03 | 电子科技大学 | Linear broadband low noise amplifier |
| CN105305981B (en) * | 2015-11-30 | 2017-12-01 | 电子科技大学 | One kind linearisation wideband low noise amplifier |
| CN106788324A (en) * | 2016-12-28 | 2017-05-31 | 上海集成电路研发中心有限公司 | A kind of loop feedback active pull-up |
| CN106788324B (en) * | 2016-12-28 | 2020-05-15 | 上海集成电路研发中心有限公司 | Loop feedback active resistor |
| CN110212870A (en) * | 2018-10-31 | 2019-09-06 | 西安电子科技大学 | A kind of integrated circuit of current multiplexing type gm-boost low-noise amplifier |
| CN114844473A (en) * | 2022-04-11 | 2022-08-02 | 电子科技大学 | Double-control-position variable gain amplifier adopting compensation capacitor technology |
| CN114844473B (en) * | 2022-04-11 | 2023-06-02 | 电子科技大学 | Double-control-bit type variable gain amplifier adopting compensation capacitance technology |
| CN114793093A (en) * | 2022-04-28 | 2022-07-26 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
| CN114793093B (en) * | 2022-04-28 | 2024-04-12 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
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| CN102324896B (en) | 2014-07-09 |
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