CN111193477A - Composite amplifier - Google Patents
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- CN111193477A CN111193477A CN202010273460.7A CN202010273460A CN111193477A CN 111193477 A CN111193477 A CN 111193477A CN 202010273460 A CN202010273460 A CN 202010273460A CN 111193477 A CN111193477 A CN 111193477A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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Abstract
The invention discloses a composite amplifier, which respectively amplifies the voltage of a direct current signal, a low frequency signal and a high frequency signal of an input signal through a direct current amplification module and a broadband amplification module, wherein the direct current amplification module adopts a high-precision operational amplifier, and adjusts the amplification factor of the direct current signal and the low frequency signal through a first feedback module, and has the characteristic of high direct current precision, the broadband amplification module adopts amplification devices such as a transistor and the like to amplify the high frequency signal and the output signal of the direct current amplification module, and has the characteristic of high bandwidth, and the transistor has good heat dissipation performance, can bear higher voltage and has the characteristic of high voltage, the impedance of the output signal is reduced through an output driving module after the amplified signal, the output driving capability of the composite amplifier is improved, and the amplification factor of the high frequency signal is adjusted through a second feedback module, so that the composite amplifier simultaneously has high bandwidth, High precision, high driving capability and high DC precision.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a composite amplifier.
Background
Amplifiers are devices that amplify the voltage or power of an input signal and are important components in the processing of signals in electronic technology tools. Amplifiers are generally classified into different types according to their characteristics to highlight some characteristics of the amplifiers, such as high-precision amplifiers, which have small offset voltage, small temperature drift, and high gain and common mode rejection ratio; also, for example, wide band amplifiers are those that are wide in frequency band.
However, the various performances of the amplifier are mutually restrictive, such as a high-precision amplifier not having a high bandwidth characteristic and such as a wide-band amplifier not having a high voltage characteristic. Therefore, a composite amplifier having high bandwidth, high precision, high output driving capability and high dc precision is needed.
The composite amplifier is composed of two or more independent amplifiers and has voltage or power amplifying devices with various characteristics, such as high bandwidth, high precision, high driving capability and the like, and the configuration mode can improve the overall performance of the amplifier. However, the amplitude of the output signal of the existing integrated broadband high-voltage amplifier is limited by the signal frequency. When the integrated broadband high-voltage amplifier outputs high-frequency and large-amplitude signals, the internal temperature of the amplifier can be increased sharply, so that the performance is deteriorated sharply, and meanwhile, the slew rate of the integrated broadband high-voltage amplifier is limited, so that the capability of the integrated broadband high-voltage amplifier for outputting high-frequency and large-amplitude signals is not ideal. For example, currently integrated wideband high voltage amplifiers can output a signal with a peak-to-peak value of 20Vpp at low frequencies, but their maximum output signal has a peak-to-peak value of no more than 5Vpp when the frequency reaches 300 MHz.
Disclosure of Invention
The invention mainly solves the technical problem of providing a composite amplifier with high bandwidth and high output driving capability.
In one embodiment there is provided a composite amplifier comprising: the device comprises a signal input end, a high-frequency coupling module, a direct current amplification module, a broadband amplification module, an output driving module and a signal output end;
the input end of the high-frequency coupling module is connected with the signal input end and is used for isolating direct current signals and low-frequency signals in signals input by the signal input end and outputting high-frequency signals in the input signals;
the input end of the direct current amplification module is connected with the signal input end and is used for amplifying direct current signals and low frequency signals in signals input by the signal input end;
the input end of the broadband amplification module is connected with the output end of the high-frequency coupling module and the output end of the direct current amplification module and is used for amplifying a high-frequency signal in an input signal and an output signal of the direct current amplification module;
the input end of the output driving module is connected with the output end of the broadband amplification module and is used for providing a load with high input impedance for the broadband amplification module and providing low output impedance for an output signal;
and the output end of the output driving module is connected with the signal output end.
The direct current amplification module is connected with the output end of the output driving module, the output end of the first feedback module is connected with the feedback end of the direct current amplification module, the first feedback module provides negative feedback for the direct current amplification module, and the amplification times of the direct current amplification module to direct current and low-frequency signals are adjusted.
The broadband amplification module is connected with the output end of the output driving module, the output end of the output driving module is connected with the output end of the output driving module, and the output driving module is used for providing high-frequency negative feedback for the broadband amplification module and adjusting the amplification factor of the broadband amplification module on high-frequency signals.
Further, the high-frequency coupling module is a first capacitor.
Furthermore, the direct current amplification module comprises a second capacitor and a high-precision operational amplifier, wherein the non-inverting input end of the high-precision operational amplifier is connected with the signal input end, the inverting input end of the high-precision operational amplifier is connected with the output end of the first feedback module, the output end of the high-precision operational amplifier is connected with the input end of the broadband amplification module, and the second capacitor is connected between the inverting input end and the output end of the high-precision operational amplifier.
Further, the broadband amplification module includes:
the input end of the first broadband amplification module is connected with the output end of the high-frequency coupling module and the output end of the direct current amplification module and is used for amplifying a high-frequency signal in an input signal and an output signal of the direct current amplification module for the first time;
and the input end of the second broadband amplification module is connected with the output end of the first broadband amplification module and is used for carrying out secondary amplification on the signal after primary amplification.
Further, the first broadband amplification module comprises a first amplification unit and a second amplification unit, and the second amplification unit is connected in parallel at two ends of the first amplification unit; the first amplifying unit and the second amplifying unit have the same structure;
the input end of the first amplifying unit is connected with the output end of the high-frequency coupling module and the output end of the direct current amplifying module, and the first amplifying unit is used for amplifying the high-frequency signal output by the output end of the high-frequency coupling module and the voltage of the output signal of the direct current amplifying module and outputting a first primary amplifying signal; the input end of the second amplifying unit is connected with the output end of the high-frequency coupling module and the output end of the direct current amplifying module, and the second amplifying unit is used for amplifying the high-frequency signal output by the output end of the high-frequency coupling module and the voltage of the output signal of the direct current amplifying module and outputting a second primary amplifying signal;
the first amplifying unit comprises a first amplifier and a third amplifier, the first amplifier is a common emitter transistor amplifier or a common source transistor amplifier, and the third amplifier is a common base transistor amplifier or a common grid transistor amplifier; the control electrode of the first amplifier is connected with the output end of the high-frequency coupling module and the output end of the direct current amplification module, the first electrode of the first amplifier is connected with the first output end of the second feedback module, the second electrode of the first amplifier is connected with the first electrode of the third amplifier, the control electrode of the third amplifier is connected with a negative voltage source, and the second electrode of the third amplifier outputs a first primary amplification signal;
the second amplifying unit comprises a second amplifier and a fourth amplifier, the second amplifier is a common emitter transistor amplifier or a common source transistor amplifier, and the fourth amplifier is a common base transistor amplifier or a common grid transistor amplifier; the control electrode of the second amplifier is connected with the output end of the high-frequency coupling module and the output end of the direct current amplification module, the first electrode of the second amplifier is connected with the second output end of the second feedback module, the second electrode of the second amplifier is connected with the first electrode of the fourth amplifier, the control electrode of the fourth amplifier is connected with a negative voltage source, and the second electrode of the fourth amplifier outputs a second primary amplification signal.
Further, the second broadband amplification module comprises a third amplification unit and a fourth amplification unit, and the fourth amplification unit is connected in parallel at two ends of the third amplification unit; the third amplifying unit and the fourth amplifying unit have the same structure;
the input end of the third amplification unit is connected with the output end of the first amplification unit, and the third amplification unit is used for amplifying the voltage of the first primary amplification signal and outputting a first secondary amplification signal; the input end of the fourth amplifying unit is connected with the output end of the second amplifying unit, and the fourth amplifying unit is used for amplifying the voltage of the second primary amplified signal and outputting a second secondary amplified signal.
Further, the output driving module comprises a fifth amplifying unit and a sixth amplifying unit, the sixth amplifying unit is connected in parallel at two ends of the fifth amplifying unit, and the fifth amplifying unit and the sixth amplifying unit have the same structure;
the input end of the fifth amplification unit is connected with the output end of the third amplification unit, and the fifth amplification unit provides a load with high input impedance for the second broadband amplification module, outputs a first amplification signal and provides low output impedance; the output end of the fifth amplifying unit is connected with the signal output end;
the input end of the sixth amplifying unit is connected with the output end of the fourth amplifying unit, and the sixth amplifying unit is used for providing a load with high input impedance for the second broadband amplifying module, outputting a second amplifying signal and providing low output impedance; and the output end of the fifth amplifying unit is connected with the signal output end.
Furthermore, the first feedback module comprises a first feedback resistor and a second feedback resistor, the output end of the sixth amplifying unit is connected with one end of the first feedback resistor, the other end of the first feedback resistor is connected with the inverting input end of the high-precision operational amplifier, the other end of the first feedback resistor is also connected with one end of the second feedback resistor, and the other end of the second feedback resistor is connected with the ground;
the second feedback module comprises a first feedback capacitor, a third feedback resistor and a fourth feedback resistor, the output end of the sixth amplification unit is connected with one end of the first feedback capacitor, the other end of the first feedback capacitor is connected with one end of the third feedback resistor, the other end of the third feedback resistor is connected with the first pole of the first amplifier, the other end of the first feedback capacitor is connected with one end of the fourth feedback resistor, and the other end of the fourth feedback resistor is connected with the first pole of the second amplifier.
According to the composite amplifier of the embodiment, the direct current, the low frequency signal and the high frequency signal of the signal input end are respectively subjected to voltage amplification through the direct current amplification module and the broadband amplification module, wherein the broadband amplification module has a very high signal bandwidth when amplifying the signal, so that the composite amplifier has the characteristic of high bandwidth, the output impedance of the output signal is reduced by the amplified high frequency signal, the direct current and the low frequency signal through the output driving module, the output driving capability of the composite amplifier is improved, and the composite amplifier has the characteristics of high bandwidth and high output driving capability.
Drawings
FIG. 1 is a block diagram of a composite amplifier of an embodiment;
fig. 2 is a circuit diagram of a composite amplifier of an embodiment.
Detailed Description
The present invention will be described in further detail with reference to the following detailed description and accompanying drawings. Wherein like elements in different embodiments are numbered with like associated elements. In the following description, numerous details are set forth in order to provide a better understanding of the present application. However, those skilled in the art will readily recognize that some of the features may be omitted or replaced with other elements, materials, methods in different instances. In some instances, certain operations related to the present application have not been shown or described in detail in order to avoid obscuring the core of the present application from excessive description, and it is not necessary for those skilled in the art to describe these operations in detail, so that they may be fully understood from the description in the specification and the general knowledge in the art.
Furthermore, the features, operations, or characteristics described in the specification may be combined in any suitable manner to form various embodiments. Also, the various steps or actions in the method descriptions may be transposed or transposed in order, as will be apparent to one of ordinary skill in the art. Thus, the various sequences in the specification and drawings are for the purpose of describing certain embodiments only and are not intended to imply a required sequence unless otherwise indicated where such sequence must be followed.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings).
In the embodiment of the invention, the composite amplifier comprises a direct current amplification module and a broadband amplification module, wherein a high-frequency coupling module is used for isolating direct current and low-frequency signals from high-frequency signals in input signals and inputting the direct current and low-frequency signals into the direct current amplification module for amplification, and the direct current amplification module consists of a high-precision operational amplifier, so that the composite amplifier has the same high-direct-current precision amplification characteristic as that of a single operational amplifier; meanwhile, a high-frequency signal is input into a broadband amplification module for amplification, the broadband amplification module consists of a plurality of discrete transistors and other amplification devices and has good frequency characteristics and heat dissipation performance, so that the composite amplifier has high bandwidth and can bear higher voltage, the output impedance of a signal output end is reduced by the amplified high-frequency signal through an output driving module, and the composite amplifier has high output driving capability; in addition, the composite amplifier in this embodiment adjusts the amplification factor of the direct current signal, the low frequency signal and the high frequency signal through the first feedback module and the second feedback module, respectively, and thus the amplification precision of the composite amplifier is improved.
Example (b):
referring to fig. 1, fig. 1 is a structural diagram of a composite amplifier according to an embodiment, including: the device comprises a signal input end 1, a high-frequency coupling module 2, a direct current amplification module 6, a broadband amplification module 3, an output driving module 4 and a signal output end 5.
The input end of the high-frequency coupling module 2 is connected with the signal input end 1 and is used for isolating a direct current signal and a low-frequency signal in signals input by the signal input end 1 and outputting a high-frequency signal in the input signals; the high frequency coupling module 2 in this embodiment is a first capacitor C1, which isolates the dc signal of the signal input from the signal input terminal from the low frequency signal through a first capacitor C1.
The input end of the direct current amplification module 6 is connected with the signal input end 1 and is used for amplifying direct current signals and low frequency signals in signals input by the signal input end 1; the output end of the direct current amplification module 6 is connected with the input end of the broadband amplification module 3.
As shown in fig. 2, the dc amplifying module 6 includes a second capacitor C2 and a high-precision operational amplifier U1, the high-precision operational amplifier U1 is a high-precision operational amplifier, such as an operational amplifier of model AD8510, the present embodiment separates the dc signal and the low-frequency signal from the input signal, and amplifies the dc signal and the low-frequency signal separately by the high-precision operational amplifier, so that the composite amplifier has the same high-precision characteristics as the single operational amplifier in terms of amplification of the dc signal and the low-frequency signal, the non-inverting input terminal of the high-precision operational amplifier U1 is connected to the signal input terminal 1, the output terminal of the high-precision operational amplifier U1 is connected to the input terminal of the broadband amplifying module 3, and the second capacitor C2 is connected between the inverting input terminal and the output terminal of the high-precision operational amplifier U1. Specifically, the dc amplification module 6 further includes a resistor R1 and a resistor R2, the resistor R1 is connected between the non-inverting input terminal of the high-precision operational amplifier U1 and the signal input terminal 1, and the resistor R2 is connected between the output terminal of the high-precision operational amplifier U1 and the input terminal of the broadband amplification module 3.
The input end of the broadband amplification module 3 is connected with the output end of the high-frequency coupling module 2 and the output end of the direct current amplification module, and is used for amplifying a high-frequency signal in the input signal and an output signal of the direct current amplification module. The amplifier device used in the broadband amplification module 3 in this embodiment is a transistor or a field effect transistor amplifier device, which has good heat dissipation performance, and if the power of the input signal is high, the problem of performance degradation of the composite amplifier due to poor heat dissipation performance is avoided. Meanwhile, the high-precision operational amplifier U1 amplifies the dc signal and the low-frequency signal in the signal input from the signal input terminal 1, and provides the static operating voltage and the static operating current for the transistor amplifying circuits in the broadband amplifying module 3 and the output driving module 4, because the slew rate of the composite amplifier is positively correlated with the static operating current, that is, the larger static operating current corresponds to the larger slew rate, the conventional integrated amplifier is limited by power consumption and heat dissipation performance, and cannot operate under the high static operating current, and the amplifying devices such as the transistor and the like adopted in the embodiment have good heat dissipation performance, so that the composite amplifier provided in the embodiment can operate under the high static operating current, and thus the composite amplifier has the high slew rate.
The broadband amplification module 3 comprises a first broadband amplification module 301 and a second broadband amplification module 302, wherein the input end of the first broadband amplification module 301 is connected with the output end of the high-frequency coupling module 2 and the output end of the direct current amplification module, and is used for performing primary amplification on a high-frequency signal in an input signal and an output signal of the direct current amplification module; the first broadband amplification module 301 in this embodiment includes a first amplification unit and a second amplification unit, where the second amplification unit is connected in parallel to two ends of the first amplification unit; the first amplifying unit and the second amplifying unit have the same structure. The input end of the first amplifying unit is connected with the output end of the high-frequency coupling module and the output end of the direct current amplifying module, and the first amplifying unit is used for amplifying a high-frequency signal output by the output end of the high-frequency coupling module and an output signal of the direct current amplifying module and outputting a first primary amplifying signal; the second amplifying unit is connected in parallel with the first amplifying unit, and is also used for amplifying the high-frequency signal output by the output end of the high-frequency coupling module and the output signal of the direct-current amplifying module and outputting a second primary amplified signal. In this embodiment, the first amplifying unit and the second amplifying unit have the same structure and are both transistor amplifying circuits, so that the first primary amplifying signal output by the first amplifying unit and the second primary amplifying signal output by the second amplifying unit are the same amplifying signals, which both amplify the high-frequency signal in the signal input by the signal input terminal 1 and the output signal of the dc amplifying module, and simultaneously input the signals to the two parallel amplifying structures in the second broadband amplifying module 302.
As shown in fig. 2, the first amplifying unit includes a first amplifier Q1 and a third amplifier Q3, the first amplifier Q1 is a common emitter transistor amplifier or a common source transistor amplifier, and the third amplifier Q3 is a common base transistor amplifier or a common gate transistor amplifier; a control electrode of the first amplifier Q1 is connected to the output end of the high-frequency coupling module 2 and the output end of the dc amplification module 6, a first electrode of the first amplifier Q1 is connected to a first output end of the second feedback module 7, a second electrode of the first amplifier Q1 is connected to a first electrode of the third amplifier Q3, a control electrode of the third amplifier Q3 is connected to a negative voltage source VEE1, and a second electrode of the third amplifier Q3 outputs a first primary amplification signal. The second amplifying unit comprises a second amplifier Q2 and a fourth amplifier Q4, the second amplifier Q2 is a common emitter transistor amplifier or a common source transistor amplifier, and the fourth amplifier Q4 is a common base transistor amplifier or a common gate transistor amplifier; a control electrode of the second amplifier Q2 is connected to the output end of the high-frequency coupling module 2 and the output end of the dc amplification module 6, a first electrode of the second amplifier Q2 is connected to the second output end of the second feedback module 7, a second electrode of the second amplifier Q2 is connected to the first electrode of the fourth amplifier Q4, a control electrode of the fourth amplifier Q4 is connected to a negative voltage source VEE1, and a second electrode of the fourth amplifier Q4 outputs a second primary amplified signal.
Specifically, the first broadband amplification module 301 further includes a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, and an inductor L1, in the first amplification unit, the resistor R3 is connected between the control electrode of the first amplifier Q1 and the output end of the high-frequency coupling module 2, the first electrode of the first amplifier Q1 is further connected to a negative voltage source VEE2, the resistor R4 is connected between the first electrode of the first amplifier Q1 and the negative voltage source VEE2, the second electrode of the third amplifier Q3 is further connected to one end of the resistor R5, the other end of the resistor R5 is connected to one end of the inductor L1, and the other end of the inductor L1 is connected to a voltage source VCC 1; similarly, in the second amplifying unit, the resistor R6 is connected between the control electrode of the second amplifier Q2 and the output terminal of the high-frequency coupling module 2, the first electrode of the second amplifier Q2 is further connected to a negative voltage source VEE2, the resistor R7 is connected between the first electrode of the second amplifier Q2 and the negative voltage source VEE2, and the second electrode of the fourth amplifier Q4 is connected to the second electrode of the third amplifier Q3. Because the first amplifying unit and the second amplifying unit have the same structure, the resistance of the resistor R3 is the same as that of the resistor R6, the resistance of the resistor R4 is the same as that of the resistor R7, the models of the first amplifier Q1 and the second amplifier Q2 are the same, the models of the third amplifier Q3 and the fourth amplifier Q4 are the same, and both are transistor amplifying devices, if the transistors are triodes, the control electrodes of the first amplifier Q1, the second amplifier Q2, the third amplifier Q3 and the fourth amplifier Q4 are base electrodes, the first electrode is an emitter electrode, and the second electrode is a collector electrode, and the triode in this embodiment is a low-power radio frequency triode, for example, a triode with a model of BFU 690F; in the case of the fet, the control electrodes of the first amplifier Q1, the second amplifier Q2, the third amplifier Q3, and the fourth amplifier Q4 are gates, the first electrode is a source, and the second electrode is a drain.
In the present embodiment, the first amplifying unit is a cascode circuit, that is, an amplifying circuit composed of a common emitter amplifying circuit and a common base amplifying circuit, and in the present embodiment, the first amplifier Q1 is a common emitter transistor amplifier, and the third amplifier Q3 is a common base transistor amplifier, and since the common base transistor amplifier has good frequency characteristics, that is, has a high bandwidth, but its input impedance is low, which causes the voltage of the input amplifier to decrease, so that it cannot effectively amplify the voltage of the input signal. The common-emitter transistor amplifier is added on the basis of the common-base transistor amplifier, so that the input impedance of the first amplifying unit is higher, and the first amplifying unit can have a larger amplification voltage factor while having a high bandwidth. The second amplifying unit has the same structure as the first amplifying unit, and thus has the same high bandwidth and larger amplification factor.
The input end of the second broadband amplifying module 302 is connected to the output end of the first broadband amplifying module 301, and is configured to amplify the signal after the first amplification for the second time. In this embodiment, a high-frequency signal in an input signal and an output signal of the dc amplification module are amplified twice, so that the signal after primary amplification is amplified twice, so that the output signal has a higher voltage, and the composite amplifier can ensure a high bandwidth and a higher output amplitude, and because the second broadband amplification module 302 employs a transistor or a field effect transistor as an amplification device, the composite amplifier has good heat dissipation performance and can bear a higher input voltage and an output voltage, the composite amplifier provided in this embodiment can amplify the input signal with a higher voltage, and has a characteristic of a high voltage.
As shown in fig. 2, the second broadband amplifying module includes a third amplifying unit and a fourth amplifying unit, and the fourth amplifying unit is connected in parallel to two ends of the third amplifying unit; the third amplifying unit and the fourth amplifying unit have the same structure; the input end of the third amplification unit is connected with the output end of the first amplification unit, and the third amplification unit is used for amplifying the voltage of the first primary amplification signal and outputting a first secondary amplification signal; the input end of the fourth amplifying unit is connected with the output end of the second amplifying unit, and the fourth amplifying unit is used for amplifying the voltage of the second primary amplified signal and outputting a second secondary amplified signal. In this embodiment, the third amplifying unit and the fourth amplifying unit may be formed by connecting two cascode transistor amplifiers in parallel, and may bear a higher voltage and have good heat dissipation performance.
Specifically, the second broadband amplification module further includes a first resistor R8, a second resistor R9, a third resistor R10, a fourth resistor R11, a fifth resistor R12, a sixth resistor R13, a seventh resistor R14, an eighth resistor R15, a ninth resistor R16, a tenth resistor R17, a third capacitor C3, a fourth capacitor C4, a first inductor L2, a first negative voltage source VEE3, and a first voltage source VCC 2.
The third amplification unit includes a fifth amplifier Q5 and a seventh amplifier Q7, the fourth amplification unit includes a sixth amplifier Q6 and an eighth amplifier Q8, and the fifth amplifier Q5, the sixth amplifier Q6, the seventh amplifier Q7, and the eighth amplifier Q8 are all transistors.
The output end of the first amplifying unit in the third amplifying unit is connected with one end of a first resistor R8, the other end of the first resistor R8 is connected with the control electrode of a fifth amplifier Q5, the first electrode of the fifth amplifier Q5 is connected with one end of a second resistor Q9, the other end of the second resistor Q9 is connected with a first negative voltage source VEE3, the second electrode of a fifth amplifier Q5 is connected with one end of a third resistor R10, the other end of the third resistor R10 is connected with one end of a fourth resistor R11, the other end of the fourth resistor R11 is connected with a first voltage source VCC2, a first inductor L2 is connected in parallel with the two ends of a fourth resistor R11, the first electrode of the fifth amplifier Q5 is also connected with one end of a fifth resistor R12, the other end of the fifth resistor R12 is connected with the control electrode of a seventh amplifier Q7, the first electrode of the seventh amplifier Q7 is connected with the sixth terminal R6342, the other end of the sixth resistor R5928 is connected with the negative voltage source VEE3, the third capacitor C3 is connected in parallel to two ends of the sixth resistor R13, the second pole of the fifth amplifier Q5 is further connected to the second pole of the seventh amplifier Q7, and the second pole of the seventh amplifier Q7 outputs the first secondary amplified signal.
Similarly, the output terminal of the first amplifying unit in the fourth amplifying unit is further connected to one terminal of a seventh resistor R14, the other terminal of the seventh resistor R14 is connected to the control terminal of a sixth amplifier Q6, the first terminal of the sixth amplifier Q6 is connected to one terminal of an eighth resistor R15, the other terminal of the eighth resistor R15 is connected to a first negative voltage source VEE3, the second terminal of the sixth amplifier Q6 is connected to the second terminal of the fifth amplifier Q5, the first terminal of the sixth amplifier Q6 is further connected to a ninth resistor R16, the other terminal of the ninth resistor R16 is connected to the control terminal of the eighth amplifier Q8, the first terminal of the eighth amplifier Q8 is connected to one terminal of a tenth resistor R17, the other terminal of the tenth resistor R17 is connected to a first negative voltage source VEE3, the fourth capacitor C4 is connected in parallel to both terminals of the tenth resistor R17, and the second terminal of the eighth amplifier Q8 outputs a second amplified signal. Since the third amplifying unit and the fourth amplifying unit have the same structure, the first resistor R8 and the seventh resistor R14 have the same resistance, the second resistor Q9 and the eighth resistor R15 have the same resistance, the sixth resistor R13 and the tenth resistor R17 have the same resistance, the fifth amplifier Q5 and the sixth amplifier Q6 have the same model, the seventh amplifier Q7 and the eighth amplifier Q8 have the same model, and are both transistor amplification advances, if the third amplifying unit and the fourth amplifying unit are triodes, the control bases of the fifth amplifier Q5, the sixth amplifier Q6, the seventh amplifier Q7 and the eighth amplifier Q8 are emitters, the first electrode is an emitter, and the second electrode is a collector; in the case of the fet, the control electrodes of the fifth, sixth, seventh and eighth amplifiers Q5, Q6, Q7 and Q8 are gates, the first electrode is a source, and the second electrode is a drain.
The input terminal of the output driver module 4 is connected to the output terminal of the second broadband amplifying module 302, and is configured to provide a load with a high output impedance for the output of the second broadband amplifying module 302. The output end of the output driving module 4 is connected with the signal output end 5, so that very low output impedance is provided for the signal output end, and the load driving capability of the output driving module is improved.
As shown in fig. 2, the output driving module 4 includes a fifth amplifying unit and a sixth amplifying unit, the sixth amplifying unit is connected in parallel to two ends of the fifth amplifying unit, and the fifth amplifying unit and the sixth amplifying unit have the same structure. The input end of the fifth amplifying unit is connected with the second pole of the seventh amplifier Q7, provides a load with high input impedance for the seventh amplifier, and outputs a first amplified signal; and the output end of the fifth amplifying unit is connected with the signal output end. The input end of the sixth amplifying unit is connected to the second pole of the eighth amplifier Q8, provides a load with high input impedance for the eighth amplifier, and outputs a second amplified signal; and the output end of the sixth amplifying unit is connected with the signal output end.
In this embodiment, the fifth amplification unit and the sixth amplification unit in the output driving module 4 are respectively formed by two parallel emitter followers, and have the characteristics of high input impedance and low output impedance, so that the load capacity of the output end of the composite amplifier is improved.
Specifically, the output driving module 4 includes a resistor R18, a ninth amplifier Q9, a resistor R19, a tenth amplifier Q10 and a constant current source I1, wherein the second pole of the seventh amplifier Q7 in the fifth amplifying unit is connected to one end of a resistor R18, the other end of the resistor R18 is connected to the control pole of the ninth amplifier Q9, the second pole of the ninth amplifier Q9 is connected to the first voltage source VCC2, the first pole of the ninth amplifier Q9 is connected to the constant current source I1, and the first pole of the ninth amplifier Q9 is further connected to the signal output terminal 5; similarly, the second pole of the eighth amplifier Q8 in the sixth amplifying unit is connected to one end of a resistor R19, the other end of the resistor R19 is connected to the control pole of a tenth amplifier Q10, the second pole of the tenth amplifier Q10 is connected to the first voltage source VCC2, the first pole of the tenth amplifier Q10 is connected to the constant current source I1, and the tenth amplifier is further connected to the first pole of the ninth amplifier and the signal output terminal 5, and is connected to the input terminals of the first feedback module 8 and the second feedback module 7, respectively. The resistance values of the resistor R18 and the resistor 19 are the same, the models of the ninth amplifier Q9 and the tenth amplifier Q10 are the same, the ninth amplifier Q9 and the tenth amplifier Q10 are both transistor amplification devices, if the transistors are triodes, the control electrodes of the ninth amplifier Q9 and the tenth amplifier Q10 are base electrodes, the first electrode is an emitter electrode, and the second electrode is a collector electrode; in the case of the field effect transistor, the control electrodes of the ninth amplifier Q9 and the tenth amplifier Q10 are gates, the first electrode is a source, and the second electrode is a drain.
The output end of the output driving module 4 is further connected with the input end of a first feedback module 8, the output end of the first feedback module 8 is connected with the feedback end of the direct current amplification module 6, and the first feedback module 8 is used for adjusting the amplification factor of the direct current signal and the low frequency signal in the signal input by the signal input end; the output end of the sixth amplifying unit is also connected with the input end of the second feedback module 7; as shown in fig. 2, the first feedback module 8 includes a first feedback resistor R20 and a second feedback resistor R21, an output terminal of the sixth amplifying unit is connected to one end of the first feedback resistor R20, the other end of the first feedback resistor R20 is connected to an inverting input terminal of the high-precision operational amplifier U1, the other end of the first feedback resistor R20 is further connected to one end of the second feedback resistor R21, and the other end of the second feedback resistor R21 is connected to ground, where the second feedback resistor R21 is a resistor with an adjustable resistance value in this embodiment. In this way, the static operating voltage and current of the dc amplification module 6, the first broadband amplification module 301, the second broadband amplification module 302 and the output driving module 4 are stabilized by the first feedback module, and the amplification factor of the dc signal and the low frequency signal of the whole composite amplifier is determined by the second feedback resistor R21 and the first feedback resistor R20, wherein the amplification factor of the dc signal and the low frequency signal in the input signal is 1+ R20/R21, and since the second feedback resistor R21 is an adjustable resistor, the amplification factor of the dc signal and the low frequency signal can be adjusted by adjusting the resistance value of the second feedback resistor R21, so that the composite amplifier has high dc precision.
The output end of the output driving module 4 is further connected with the input end of a second feedback module 7, the output end of the second feedback module 7 is connected with the feedback end of the first broadband amplification module 301, and the second feedback module 7 is used for adjusting the amplification factor of a high-frequency signal in signals input by the signal input end; the output end of the sixth amplifying unit is connected with the input end of the first feedback module; as shown in fig. 2, the second feedback module 7 includes a first feedback capacitor C5, a third feedback resistor R22, and a fourth feedback resistor R23, an output end of the sixth amplifying unit is further connected to one end of the first feedback capacitor C5, the other end of the first feedback capacitor C5 is connected to one end of the third feedback resistor R22, the other end of the third feedback resistor R22 is connected to the first pole of the first amplifier Q1, the other end of the first feedback capacitor C5 is further connected to one end of the fourth feedback resistor R23, and the other end of the fourth feedback resistor R23 is connected to the first pole of the second amplifier Q2. Thus, the first feedback capacitor C5 couples the high frequency feedback signal from the output terminal of the output driver module, and isolates the dc signal and the low frequency signal output by the output driver module, the first feedback capacitor C5 feeds the coupled high frequency feedback signal to the feedback terminal of the first broadband amplifier module 301 (the first pole of the first amplifier Q1, the first pole of the second amplifier Q2) through the third feedback resistor R22 and the fourth feedback resistor R23, respectively, to form a high frequency negative feedback loop of the composite amplifier, wherein the third feedback resistor R22 and the fourth feedback resistor R23 have the same resistance, and the amplification factor of the high frequency signal in the input signal is 1+ R22/R4. The amplification factor of the high-frequency signal in the embodiment is certain, and the amplification factor of the direct-current signal and the low-frequency signal can be adjusted by adjusting the resistance value of the second feedback resistor R21, so that the amplification factor of the direct-current signal and the low-frequency signal is the same as that of the high-frequency signal, the problem that the direct-current amplification factor and the low-frequency amplification factor have deviation due to temperature drift and other reasons in the use process of the composite amplifier is avoided, and the amplification precision of the composite amplifier on the input signal is improved.
The present invention has been described in terms of specific examples, which are provided to aid understanding of the invention and are not intended to be limiting. For a person skilled in the art to which the invention pertains, several simple deductions, modifications or substitutions may be made according to the idea of the invention.
Claims (8)
1. A composite amplifier, comprising: the device comprises a signal input end, a high-frequency coupling module, a direct current amplification module, a broadband amplification module, an output driving module and a signal output end;
the input end of the high-frequency coupling module is connected with the signal input end and is used for isolating direct current signals and low-frequency signals in signals input by the signal input end and outputting high-frequency signals in the input signals;
the input end of the direct current amplification module is connected with the signal input end and is used for amplifying direct current signals and low frequency signals in signals input by the signal input end; the output end of the direct current amplification module is connected with the input end of the broadband amplification module;
the input end of the broadband amplification module is connected with the output end of the high-frequency coupling module and the output end of the direct current amplification module and is used for amplifying a high-frequency signal in an input signal and an output signal of the direct current amplification module;
the broadband amplification module includes:
the input end of the first broadband amplification module is connected with the output end of the high-frequency coupling module and the output end of the direct current amplification module and is used for amplifying a high-frequency signal in an input signal and an output signal of the direct current amplification module for the first time;
the input end of the second broadband amplification module is connected with the output end of the first broadband amplification module and is used for carrying out secondary amplification on the signal after primary amplification;
the first broadband amplification module comprises a first amplification unit and a second amplification unit, and the second amplification unit is connected to two ends of the first amplification unit in parallel; the first amplifying unit and the second amplifying unit have the same structure;
the input end of the first amplifying unit is connected with the output end of the high-frequency coupling module and the output end of the direct current amplifying module, and the first amplifying unit is used for amplifying the high-frequency signal output by the output end of the high-frequency coupling module and the voltage of the output signal of the direct current amplifying module and outputting a first primary amplifying signal; the input end of the second amplifying unit is connected with the output end of the high-frequency coupling module and the output end of the direct current amplifying module, and the second amplifying unit is used for amplifying the high-frequency signal output by the output end of the high-frequency coupling module and the voltage of the output signal of the direct current amplifying module and outputting a second primary amplifying signal;
the first amplifying unit comprises a first amplifier and a third amplifier, the first amplifier is a common emitter transistor amplifier or a common source transistor amplifier, and the third amplifier is a common base transistor amplifier or a common grid transistor amplifier; the control electrode of the first amplifier is connected with the output end of the high-frequency coupling module and the output end of the direct current amplification module, the first electrode of the first amplifier is connected with the first output end of the second feedback module, the second electrode of the first amplifier is connected with the first electrode of the third amplifier, the control electrode of the third amplifier is connected with a negative voltage source, and the second electrode of the third amplifier outputs a first primary amplification signal;
the second amplifying unit comprises a second amplifier and a fourth amplifier, the second amplifier is a common emitter transistor amplifier or a common source transistor amplifier, and the fourth amplifier is a common base transistor amplifier or a common grid transistor amplifier; the control electrode of the second amplifier is connected with the output end of the high-frequency coupling module and the output end of the direct current amplification module, the first electrode of the second amplifier is connected with the second output end of the second feedback module, the second electrode of the second amplifier is connected with the first electrode of the fourth amplifier, the control electrode of the fourth amplifier is connected with a negative voltage source, and the second electrode of the fourth amplifier outputs a second primary amplification signal;
the input end of the output driving module is connected with the output end of the broadband amplification module and is used for providing a load with high input impedance for the broadband amplification module and providing low output impedance for an output signal;
and the output end of the output driving module is connected with the signal output end.
2. The composite amplifier of claim 1, further comprising a first feedback module, an input of the first feedback module being coupled to an output of the output driver module, an output of the first feedback module being coupled to a feedback of the dc amplifier module, the first feedback module providing negative feedback to the dc amplifier module for adjusting the amplification of the dc amplifier module for the dc and low frequency signals.
3. The composite amplifier according to claim 1 or 2, further comprising a second feedback module, wherein an input terminal of the second feedback module is connected to an output terminal of the output driving module, and an output terminal of the second feedback module is connected to a feedback terminal of the broadband amplification module, and the second feedback module provides high-frequency negative feedback for the broadband amplification module to adjust the amplification factor of the broadband amplification module on the high-frequency signal.
4. The composite amplifier of claim 1, wherein said high frequency coupling module is a first capacitor.
5. The composite amplifier of claim 1, wherein the dc amplification block comprises a second capacitor and a high precision operational amplifier, the high precision operational amplifier having a non-inverting input coupled to the signal input, the high precision operational amplifier having an inverting input coupled to the output of the first feedback block, the high precision operational amplifier having an output coupled to the input of the wide band amplification block, the second capacitor coupled between the inverting input and the output of the high precision operational amplifier.
6. The composite amplifier of claim 1, wherein the second broadband amplification module comprises a third amplification unit and a fourth amplification unit, the fourth amplification unit being connected in parallel across the third amplification unit; the third amplifying unit and the fourth amplifying unit have the same structure;
the input end of the third amplification unit is connected with the output end of the first amplification unit, and the third amplification unit is used for amplifying the voltage of the first primary amplification signal and outputting a first secondary amplification signal; the input end of the fourth amplifying unit is connected with the output end of the second amplifying unit, and the fourth amplifying unit is used for amplifying the voltage of the second primary amplified signal and outputting a second secondary amplified signal.
7. The composite amplifier of claim 6, wherein the output driving module comprises a fifth amplifying unit and a sixth amplifying unit, the sixth amplifying unit is connected in parallel to two ends of the fifth amplifying unit, and the fifth amplifying unit and the sixth amplifying unit have the same structure;
the input end of the fifth amplification unit is connected with the output end of the third amplification unit, and the fifth amplification unit provides a load with high input impedance for the second broadband amplification module, outputs a first amplification signal and provides low output impedance; the output end of the fifth amplifying unit is connected with the signal output end;
the input end of the sixth amplifying unit is connected with the output end of the fourth amplifying unit, and the sixth amplifying unit is used for providing a load with high input impedance for the second broadband amplifying module, outputting a second amplifying signal and providing low output impedance;
and the output end of the fifth amplifying unit is connected with the signal output end.
8. The composite amplifier of claim 7, wherein the first feedback module comprises a first feedback resistor and a second feedback resistor, the output terminal of the sixth amplifying unit is connected to one end of the first feedback resistor, the other end of the first feedback resistor is connected to the inverting input terminal of the high-precision operational amplifier, the other end of the first feedback resistor is further connected to one end of the second feedback resistor, and the other end of the second feedback resistor is connected to ground;
the second feedback module comprises a first feedback capacitor, a third feedback resistor and a fourth feedback resistor, the output end of the sixth amplification unit is connected with one end of the first feedback capacitor, the other end of the first feedback capacitor is connected with one end of the third feedback resistor, the other end of the third feedback resistor is connected with the first pole of the first amplifier, the other end of the first feedback capacitor is connected with one end of the fourth feedback resistor, and the other end of the fourth feedback resistor is connected with the first pole of the second amplifier.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112511115A (en) * | 2021-02-02 | 2021-03-16 | 深圳市鼎阳科技股份有限公司 | Composite signal amplifying circuit and signal generator |
| CN117240258A (en) * | 2023-11-16 | 2023-12-15 | 苏州联讯仪器股份有限公司 | Pulse signal regulating circuit and high-voltage pulse source |
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| CN204654930U (en) * | 2015-04-13 | 2015-09-23 | 深圳市飞马与星月科技研究有限公司 | The superelevation common mode rejection circuit of ecg signal acquiring and electrocardiogram acquisition equipment |
| CN105356879A (en) * | 2015-09-29 | 2016-02-24 | 北京航天长征飞行器研究所 | Signal conditioning circuit for acceleration sensor with high g value |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN204654930U (en) * | 2015-04-13 | 2015-09-23 | 深圳市飞马与星月科技研究有限公司 | The superelevation common mode rejection circuit of ecg signal acquiring and electrocardiogram acquisition equipment |
| CN105356879A (en) * | 2015-09-29 | 2016-02-24 | 北京航天长征飞行器研究所 | Signal conditioning circuit for acceleration sensor with high g value |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112511115A (en) * | 2021-02-02 | 2021-03-16 | 深圳市鼎阳科技股份有限公司 | Composite signal amplifying circuit and signal generator |
| CN112511115B (en) * | 2021-02-02 | 2021-05-04 | 深圳市鼎阳科技股份有限公司 | Composite signal amplifying circuit and signal generator |
| CN117240258A (en) * | 2023-11-16 | 2023-12-15 | 苏州联讯仪器股份有限公司 | Pulse signal regulating circuit and high-voltage pulse source |
| CN117240258B (en) * | 2023-11-16 | 2024-03-15 | 苏州联讯仪器股份有限公司 | Pulse signal regulating circuit and high-voltage pulse source |
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