WO2023061089A1 - Radio frequency power amplifier applied to 5g-sub6g frequency band communication system - Google Patents

Radio frequency power amplifier applied to 5g-sub6g frequency band communication system Download PDF

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WO2023061089A1
WO2023061089A1 PCT/CN2022/116417 CN2022116417W WO2023061089A1 WO 2023061089 A1 WO2023061089 A1 WO 2023061089A1 CN 2022116417 W CN2022116417 W CN 2022116417W WO 2023061089 A1 WO2023061089 A1 WO 2023061089A1
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transistor
capacitor
resistor
base
inductor
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PCT/CN2022/116417
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French (fr)
Chinese (zh)
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谢志远
赵宇霆
郭嘉帅
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深圳飞骧科技股份有限公司
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Publication of WO2023061089A1 publication Critical patent/WO2023061089A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Definitions

  • the invention relates to the technical field of power amplifiers, in particular to a radio frequency power amplifier applied to a 5G-Sub6G frequency band communication system.
  • the key module is the RF Power Amplifier (RF Power Amplifier) located at the final stage of the transmitter. Its function is to amplify the output signal, and the amplified signal is sent by the antenna.
  • the RF power amplifier directly affects and determines various performance indicators such as output power, efficiency, gain, linearity, operating bandwidth, and reflection coefficient of the transmitter system, thereby affecting and determining various performance indicators of the entire wireless communication system.
  • the 5G wireless communication system puts forward more stringent requirements on the performance of RF power amplifiers, such as high power, high gain flatness, etc., and the existing power amplifiers need to cascade multi-stage amplifier circuits in order to obtain high gain, and due to different The gain frequency response of the amplifier circuit is different, resulting in poor flatness of the gain frequency response of the power amplifier.
  • An embodiment of the present invention provides a radio frequency power amplifier applied to a 5G-Sub6G frequency band communication system, which can improve gain flatness to a certain extent.
  • the present invention provides a radio frequency power amplifier applied to a 5G-Sub6G frequency band communication system, including a first-stage matching network connected in series, a first transistor Q1, a second-stage matching network, a second Transistor Q2, third-level matching network, third transistor Q3 and output matching network;
  • the input end of the first-stage matching network is used to connect the input signal RFin, the output end of the first-stage matching network is connected to the base of the first transistor Q1, and the emitter of the first transistor Q1 is grounded and the collector is grounded.
  • the output end of the second-stage matching network is connected to the base of the second transistor Q3, the emitter of the second-stage transistor Q2 is grounded and the collector is connected to the
  • the input terminal of the third-level matching network is connected, the output terminal of the third-level matching network is connected to the base of the third transistor Q3, the emitter of the third transistor Q3 is grounded and the collector is matched with the output
  • the input end of the network is connected, and the output end of the output matching network is used to output signal RFout;
  • the first stage matching network includes a resonant unit, the resonant unit includes a first capacitor C1, a first resistor R1 and a first inductor L1, one end of the first capacitor C1 is connected in parallel with the base of the first transistor Q1 And the connection node is used to input the input signal RFin, the other end of the first capacitor C1 is connected to one end of the first inductor L1, the other end of the first inductor L1 is grounded, and the first resistor R1 is connected in parallel at both ends of the first inductor L1.
  • the first stage matching network further includes a second capacitor C2, a third capacitor C3, and a second inductor L2, one end of the second capacitor C2 is connected to one end of the second inductor L2, the third capacitor One end of C3 is connected, one end of the second capacitor C2 is connected to the connection node, the other end of the third capacitor C3 is connected to the base of the first transistor Q1, and the other end of the second inductor L2 One end is grounded.
  • the second resistor R2 is connected in series between the third capacitor C3 and the base of the first transistor Q1, and the negative feedback network is connected to the Between the collector and the base of the first transistor Q1, and in parallel with the second resistor R2.
  • the negative feedback network includes a third resistor R3 and a fourth capacitor C4, wherein one end of the third resistor R3 is connected to the base of the first transistor Q1, and the other end of the third resistor R3 is connected to the base of the first transistor Q1. One end of the fourth capacitor C4 is connected, and the other end of the fourth capacitor C4 is connected to the collector of the first transistor Q1.
  • the second-level matching network includes a fifth capacitor C5, a sixth capacitor C6, a third inductor L3, and a fourth inductor L4;
  • the fifth capacitor C5 and the sixth capacitor C6 are connected in series between the collector of the first transistor Q1 and the base of the second transistor Q2, and one end of the third inductor L3 is connected to the first The collector of the transistor Q1 and the other end are connected to the voltage signal Vcc1, one end of the fourth inductor L4 is connected between the fifth capacitor C5 and the sixth capacitor C6, and the other end is grounded;
  • a fourth resistor R4 is connected in series between the sixth capacitor C6 and the base of the second transistor Q2.
  • the third-level matching network includes a seventh capacitor C7, an eighth capacitor C8, a fifth inductor L5, and a sixth inductor L6;
  • the seventh capacitor C7 and the eighth capacitor C8 are connected in series between the collector of the second transistor Q2 and the base of the third transistor Q3, and one end of the fifth inductor L5 is connected to the second The collector of the transistor Q2 and the other end are connected to the voltage signal Vcc2, one end of the sixth inductor L6 is connected between the seventh capacitor C7 and the eighth capacitor C8, and the other end is grounded;
  • a fifth resistor R5 is connected in series between the eighth capacitor C8 and the base of the third transistor Q3.
  • the output matching network includes a ninth capacitor C9, a tenth capacitor C10, a seventh inductor L7, and an eighth inductor L8;
  • the ninth capacitor C9 and the tenth capacitor C10 are connected in series, and one end of the series is connected to the collector of the third transistor Q3, and the other end of the series is used to output signal RFout, and one end of the seventh inductor L7 is connected to the The collector and the other end of the third transistor Q3 are connected to the voltage signal Vcc3, one end of the eighth inductor L8 is connected between the ninth capacitor C9 and the tenth capacitor C10, and the other end is grounded.
  • first bias circuit a second bias circuit, a second a bias circuit and a third bias circuit
  • the first bias circuit, the second bias circuit and the third bias circuit all have the same bias circuit structure.
  • the bias circuit structure includes a fourth transistor Q4 to an eighth transistor Q8, a sixth resistor R6 to a fifteenth resistor R15, and an eleventh capacitor C11 to a thirteenth capacitor C13;
  • the collector of the fourth transistor Q4 is connected to the base of the fifth transistor Q5 and one end of the sixth resistor, and the collector of the fifth transistor Q5 is connected to the base of the sixth transistor Q6 , one end of the eighth resistor R8 is connected, the collector of the sixth transistor Q6 is connected to the base of the seventh transistor Q7, and one end of the tenth resistor R10 is connected, and the other end of the sixth resistor R6
  • the other end of the eighth resistor R8 and the other end of the tenth resistor R10 are both connected to the voltage signal Vreg, the emitter of the fourth transistor Q4, the emitter of the fifth transistor Q4 and the emitter of the sixth transistor Q6
  • the seventh resistor R7, the ninth resistor R9 and the eleventh resistor R11 are respectively grounded; the base of the fourth transistor Q4 is connected to one end of the fourteenth resistor R14, and the fourteenth resistor R14 The other end is connected in parallel with one end of the twelfth resistor R12, one end of
  • the radio frequency power amplifier applied to the 5G-Sub6G frequency band communication system of the present invention includes a first-level matching network, a first transistor Q1, a second-level matching network, a second transistor Q2, and a third-level matching network connected in series in sequence.
  • the input end of the first-stage matching network is used to connect the input signal RFin, and the output end of the first-stage matching network is connected to the base of the first transistor Q1, so The emitter of the first transistor Q1 is grounded and the collector is connected to the input end of the second stage matching network, the output end of the second stage matching network is connected to the base electrode of the second transistor Q3, and the second stage The emitter of the transistor Q2 is grounded and the collector is connected to the input terminal of the third-level matching network, the output terminal of the third-level matching network is connected to the base of the third transistor Q3, and the third transistor Q3 The emitter is grounded and the collector is connected to the input end of the output matching network, the output end of the output matching network is used to output the signal RFout; the first stage matching network includes a resonant unit, and the resonant unit includes a first Capacitor C1, first resistor R1 and first inductor L1, one end of the first capacitor C1 is connected in
  • FIG. 1 is a schematic diagram of a radio frequency power amplifier provided by an embodiment of the present invention
  • FIG. 2 is a schematic circuit diagram of a bias single-circuit structure provided by an embodiment of the present invention.
  • Fig. 3 is the simulation waveform diagram of the gain trend of the first-stage amplifier when the first-stage matching network has a resonant unit and does not have a resonant unit;
  • Fig. 4 is a simulation waveform diagram of the input return loss and output return loss of the radio frequency power amplifier when the first stage matching network has a resonant unit and does not have a resonant unit.
  • the 5G frequency band is divided into two major ranges, namely 450MHz ⁇ 6GHz (referred to as Sub6G) and 24.25GHz ⁇ 52.6GHz (millimeter wave frequency band).
  • Sub6G 450MHz ⁇ 6GHz
  • 24.25GHz ⁇ 52.6GHz millimeter wave frequency band
  • the radio frequency power amplifier 100 applied to the 5G-Sub6G frequency band communication system in the embodiment of the present invention includes a first-stage matching network 11, a first transistor Q1, and a second-stage matching network 12 connected in series in sequence. , the second transistor Q2, the third stage matching network 13, the third transistor Q3 and the output matching network 14.
  • the input end of the first-stage matching network 11 is used to connect the input signal RFin
  • the output end of the first-stage matching network 11 is connected to the base of the first transistor Q1
  • the emitter of the first transistor Q1 Grounded and the collector is connected to the input end of the second-stage matching network 12
  • the output end of the second-stage matching network 12 is connected to the base of the second transistor Q3, and the emitter of the second-stage transistor Q2 is grounded
  • the collector is connected to the input terminal of the third-level matching network 13
  • the output terminal of the third-level matching network 13 is connected to the base of the third transistor Q3, and the emitter of the third transistor Q3 is grounded
  • the collector is connected to the input end of the output matching network 14, and the output end of the output matching network 14 is used to output the signal RFout.
  • the first transistor Q1, the second transistor Q2 and the third transistor Q3 are respectively used to realize the amplification functions of the first-stage amplifier, the second-stage amplifier and the third-stage amplifier, and are used to amplify the radio frequency input signal RFin, that is, the first One transistor Q1 corresponds to the realization circuit of the first-stage amplifier, the second transistor Q2 corresponds to the realization circuit of the second-stage amplifier, and the third transistor Q3 corresponds to the realization circuit of the third-stage amplifier, and the amplified signal passes through the output matching network 14 output.
  • the number of the first transistor Q1, the second transistor Q2 and the third transistor Q3 may be one or more, and when there are multiple transistors, for example, when there are multiple first transistors Q1, the number
  • the first transistor Q1 has a parallel connection structure, that is, the bases of multiple transistors Q1 are connected in parallel, the collectors are connected in parallel, and the emitters are connected in parallel.
  • the first stage matching network 11 is used as an input impedance matching, and it includes a resonant unit 11, and the resonant unit 11 includes a first capacitor C1, a first resistor R1 and a first inductor L1, and one end of the first capacitor C1 connected in parallel with the base of the first transistor Q1 and connected to a node for inputting the input signal RFin, the other end of the first capacitor C1 is connected to one end of the first inductor L1, and the first inductor L1 The other end is grounded, and the first resistor R1 is connected in parallel with both ends of the first inductor L1. Therefore, the first capacitor C1 and the first inductor L1 are connected in series to the ground to form a resonant unit, which can adjust the gain flatness of the radio frequency power amplifier.
  • the gain trend of each amplifier stage is that the gain decreases as the frequency increases, that is, the low-frequency gain is high and the high-frequency gain is low. If the gain trends of the three-stage amplifiers are all the same, then after the three-stage amplifiers are cascaded, the gains will be superimposed, and the gain trends will also superimpose, resulting in a situation where the low-frequency gain is much higher than the high-frequency gain.
  • the gain of the first-stage amplifier can be reversed, that is, the low-frequency gain is low and the high-frequency gain is high, that is, By setting the resonant unit 11, the gain trend of the first stage amplifier can be made to be low in low frequency gain and high in high frequency gain.
  • Figure 3 shows the gain trend simulation waveform of the first-stage amplifier when the resonant unit is added to the first-stage matching network
  • Figure b of Figure 3 shows that in the first stage
  • the gain trend simulation waveform diagram of the first-stage amplifier without a resonant unit in the matching network where the ordinate S(2, 1) represents the gain, and the abscissa represents the frequency. It can be seen from the figure that there is no resonant unit at 3.9GHz
  • the gain of the amplifier at the time is 39.347, while the gain of the first-stage amplifier with the resonance unit is 30.907.
  • the gain of the first-stage amplifier with the resonance unit is higher than that without resonance
  • the gain of the amplifier of the unit is low, that is, the low-frequency gain is achieved
  • the gain of the first-stage amplifier with the resonant unit is slightly higher than that of the amplifier without the resonant unit, that is, the high-frequency gain is achieved.
  • the gain trend of the second-stage amplifier is relatively flat, while the gain trend of the third-stage amplifier is still high in low-frequency gain and low in high-frequency gain. Therefore, in the embodiment of the present invention, after the gains of the three-stage amplifiers are superimposed and the gain trend of the third-stage amplifier make up or cancel each other, and because the gain trend of the second-stage amplifier is relatively flat, the final superposition result is a flat straight line. Therefore, through the function of the resonant unit 11, the gain flatness of the whole circuit can be improved.
  • the embodiment of the present invention uses ) increasing the resonant unit 11 can reduce this negative effect.
  • the diagram a of Figure 4 shows that in the first stage
  • the simulation waveform diagram of the input return loss and output return loss of the RF power amplifier 100 when the resonant unit is added in the matching network the b diagram of Fig.
  • FIG. 4 shows the input of the RF power amplifier 100 without the resonant unit in the first-stage matching network
  • the simulation waveform diagram of return loss and output return loss wherein, after adding the resonant unit 11, as shown in figure a of Figure 4, the minimum value of the input return loss S(1,1) is less than -20, and the circuit matches The result is better, so even if the resonant unit 11 is added, the influence on the overall circuit is small.
  • the first capacitor C1 has a greater influence on the low-frequency gain, and the first inductance L1 has a greater influence on the overall gain.
  • the first resistor R1 is connected in parallel with the first inductance L1. Different resonances can be obtained by setting the first resistor R1 of different sizes. bandwidth.
  • the first-stage matching network 11 further includes a second capacitor C2, a third capacitor C3 and a second inductor L2 for forming impedance matching of the input stage.
  • a second capacitor C2 is connected to one end of the second inductor L2 and one end of the third capacitor C3, one end of the second capacitor C2 is connected to the connection node, and the third The other end of the capacitor C3 is connected to the base of the first transistor Q1, and the other end of the second inductor L2 is grounded.
  • a second resistor R2 is connected in series at the base of the first transistor Q1, and the second resistor R2 is connected in series between the third capacitor C3 and the base of the first transistor Q1.
  • the RF power amplifier 100 further includes a feedback network 15, the negative feedback network 15 is connected between the collector and the base of the first transistor Q1, and connected in parallel with the second resistor R2.
  • the negative feedback network 15 can be implemented with an RC structure, for example, it can include a third resistor R3 and a fourth capacitor C4, wherein one end of the third resistor R3 is connected to the base of the first transistor Q1, and the The other end of the third resistor R3 is connected to one end of the fourth capacitor C4, and the other end of the fourth capacitor C4 is connected to the collector of the first transistor Q1.
  • the gain flatness of the first-stage amplifier can be adjusted and the stability of the first-stage amplifier and the overall power amplifier can be increased, and the feedback depth can be adjusted by setting the third resistor R3 with different resistance values.
  • the second stage matching network 12 includes a fifth capacitor C5, a sixth capacitor C6, a third inductor L3 and a fourth inductor L4.
  • the fifth capacitor C5 and the sixth capacitor C6 are connected in series between the collector of the first transistor Q1 and the base of the second transistor Q2, and one end of the third inductor L3 is connected to the first
  • the collector and the other end of the transistor Q1 are connected to the voltage signal Vcc1, one end of the fourth inductor L4 is connected between the fifth capacitor C5 and the sixth capacitor C6, and the other end is grounded.
  • a fourth resistor R4 is connected in series between the sixth capacitor C6 and the base of the second transistor Q2.
  • the third stage matching network 13 includes a seventh capacitor C7, an eighth capacitor C8, a fifth inductor L5 and a sixth inductor L6.
  • the seventh capacitor C7 and the eighth capacitor C8 are connected in series between the collector of the second transistor Q2 and the base of the third transistor Q3, and one end of the fifth inductor L5 is connected to the second
  • the collector and the other end of the transistor Q2 are connected to the voltage signal Vcc2, one end of the sixth inductor L6 is connected between the seventh capacitor C7 and the eighth capacitor C8, and the other end is grounded.
  • a fifth resistor R5 is connected in series between the eighth capacitor C8 and the base of the third transistor Q3.
  • the output matching network 14 includes a ninth capacitor C9, a tenth capacitor C10, a seventh inductor L7 and an eighth inductor L8.
  • the ninth capacitor C9 and the tenth capacitor C10 are connected in series, and one end of the series is connected to the collector of the third transistor Q3, and the other end of the series is used to output signal RFout, and one end of the seventh inductor L7 is connected to the The collector and the other end of the third transistor Q3 are connected to the voltage signal Vcc3, one end of the eighth inductor L8 is connected between the ninth capacitor C9 and the tenth capacitor C10, and the other end is grounded.
  • the matching networks in the embodiments of the present invention are all LC structures, and the second resistor R2, the fourth resistor R4, and the fifth resistor R5 are beneficial to increase the stability of each stage of amplifiers and reduce the matching of each stage of amplifiers. difficulty.
  • the radio frequency power amplifier 100 also includes a first bias voltage for respectively providing bias voltages for the base of the first transistor Q1, the base of the second transistor Q2, and the base of the third transistor Q3.
  • circuit 16 a second bias circuit 17 and a third bias circuit 18 .
  • the first bias circuit, the second bias circuit and the third bias circuit all have the same bias circuit structure.
  • each bias circuit may also be implemented by using a different circuit structure.
  • the first bias circuit 16, the second bias circuit 17, and the third bias circuit 18 can all be realized by using the same bias circuit structure, and the bias circuit structure includes a fourth transistor Q4 to an eighth transistor Q8, the sixth resistor R6 to the fifteenth resistor R15, the eleventh capacitor C11 to the thirteenth capacitor C13.
  • the collector of the fourth transistor Q4 is connected to the base of the fifth transistor Q5 and one end of the sixth resistor, and the collector of the fifth transistor Q5 is connected to the base of the sixth transistor Q6 , one end of the eighth resistor R8 is connected, the collector of the sixth transistor Q6 is connected to the base of the seventh transistor Q7, and one end of the tenth resistor R10 is connected, and the other end of the sixth resistor R6
  • the other end of the eighth resistor R8 and the other end of the tenth resistor R10 are both connected to the voltage signal Vreg, the emitter of the fourth transistor Q4, the emitter of the fifth transistor Q4 and the emitter of the sixth transistor Q6
  • the seventh resistor R7, the ninth resistor R9 and the eleventh resistor R11 are respectively grounded; the base of the fourth transistor Q4 is connected to one end of the fourteenth resistor R14, and the fourteenth resistor R14 The other end is connected in parallel with one end of the twelfth resistor R12, one end of
  • the base currents of the first to third transistors increase, causing the base potential to decrease, and at the same time, some dynamic signals on the main radio frequency line will leak to the bias circuit.
  • the signal flows to the transistor Q7 through the resistor R15, and then to the ground through the capacitors C11 and C12, or the signal flows to the transistor Q4 through the resistor 14, and then to the ground through the capacitor C13, so the bias circuit is not affected by the radio frequency signal.
  • the base potential drops, so the base quiescent current of the transistors Q1 to Q3 increases accordingly, and the base-emitter voltage of the transistors Q1 to Q3 is small, so , the base potential of the transistor Q4 decreases, the collector current of the transistor Q4 decreases, the resistor R6 is connected in series with the transistor Q4, the current on the resistor R6 decreases, that is, the voltage applied across the R6 decreases; and the base voltage of the transistor Q5 As it increases, the collector current of transistor Q5 increases, and the voltage applied across resistor R8 increases; the base voltage of transistor Q6 decreases accordingly, the collector current of transistor Q6 decreases, and the voltage applied across resistor R10 decreases The base voltage of the transistor Q7 increases, and the dynamic signal leaked into the transistor Q7 from the radio frequency main line makes the base voltage of the transistor Q7 decrease.
  • the bias circuit structure of this embodiment keeps the bias voltages of the transistors Q1 to Q3 on the main radio frequency line basically unchanged through the feedback structure.
  • the resistance values of the resistors R6 to R11 By adjusting the resistance values of the resistors R6 to R11, the base potentials of the transistors in the series circuit corresponding to each resistor can be adjusted, so as to control the current and voltage compensation value of the bias circuit.
  • the heat effect of the transistors Q1 to Q3 in the power amplifier can be better improved, and a stable current can be provided.

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Abstract

Disclosed in embodiments of the present invention is a radio frequency power amplifier applied to a 5G-Sub6G frequency band communication system, comprising a first-stage matching network, a first transistor Q1, a second-stage matching network, a second transistor Q2, a third-stage matching network, a third transistor Q3 and an output matching network which are sequentially connected in series. An input signal RFin is sequentially amplified by the first transistor Q1, the second transistor Q2 and the third transistor Q3 and then is output by the output matching network, wherein the first-stage matching network comprises a resonance unit, and the resonance unit comprises a first capacitor C1, a first resistor R1, and a first inductor L1. One end of the first capacitor C1 is connected in parallel to a base of the first transistor Q1, a connection node is used for inputting the input signal RFin, the other end of the first capacitor C1 is connected to one end of the first inductor L1, the other end of the first inductor L1 is grounded, and the first resistor R1 is connected in parallel to two ends of the first inductor L1, such that the gain flatness can be improved.

Description

应用于5G-Sub6G频段通信系统的射频功率放大器RF power amplifier applied to 5G-Sub6G frequency band communication system 技术领域technical field
本发明涉及功率放大器技术领域，尤其涉及一种应用于5G-Sub6G频段通信系统的射频功率放大器。The invention relates to the technical field of power amplifiers, in particular to a radio frequency power amplifier applied to a 5G-Sub6G frequency band communication system.
背景技术Background technique
在无线通信系统中，关键模块是位于发射机末级的射频功率放大器(RF Power Amplifier)，其作用为将输出信号进行放大，由天线将被放大的信号发出。射频功率放大器直接影响和决定发射机系统的输出功率、效率、增益、线性度、工作带宽、反射系数等各项性能指标，从而影响和决定整个无线通信系统的各项性能指标。而5G无线通信系统对射频功率放大器的性能提出了更加苛刻的要求，如高功率、高增益平坦度等，而现有的功率放大器为了获得高增益，需要级联多级放大电路，而由于不同的放大电路增益频响不同，从而导致功率放大器的增益频率响应平坦度较差。In the wireless communication system, the key module is the RF Power Amplifier (RF Power Amplifier) located at the final stage of the transmitter. Its function is to amplify the output signal, and the amplified signal is sent by the antenna. The RF power amplifier directly affects and determines various performance indicators such as output power, efficiency, gain, linearity, operating bandwidth, and reflection coefficient of the transmitter system, thereby affecting and determining various performance indicators of the entire wireless communication system. The 5G wireless communication system puts forward more stringent requirements on the performance of RF power amplifiers, such as high power, high gain flatness, etc., and the existing power amplifiers need to cascade multi-stage amplifier circuits in order to obtain high gain, and due to different The gain frequency response of the amplifier circuit is different, resulting in poor flatness of the gain frequency response of the power amplifier.
发明内容Contents of the invention
本发明实施例提供一种应用于5G-Sub6G频段通信系统的射频功率放大器，能够在一定程度上提高增益平坦度。An embodiment of the present invention provides a radio frequency power amplifier applied to a 5G-Sub6G frequency band communication system, which can improve gain flatness to a certain extent.
为了解决上述技术问题，本发明一方面提供一种应用于5G-Sub6G频段通信系统的射频功率放大器，包括依次串联连接的第一级匹配网络、第一晶体管Q1、第二级匹配网络、第二晶体管Q2、第三级匹配网络、第三晶体管Q3以及输出匹配网络；In order to solve the above technical problems, on the one hand, the present invention provides a radio frequency power amplifier applied to a 5G-Sub6G frequency band communication system, including a first-stage matching network connected in series, a first transistor Q1, a second-stage matching network, a second Transistor Q2, third-level matching network, third transistor Q3 and output matching network;
所述第一级匹配网络的输入端用于连接输入信号RFin，所述第一级匹配网络的输出端与第一晶体管Q1的基极连接，所述第一晶体管Q1的发射极接地且集电极与第二级匹配网络的输入端连接，所述第二级匹配网络的输出端与所述第二晶体管Q3的基极连接，所述第二级晶体管Q2的发射极接地且集电极与所述第三级匹配网络的输入端连接，所述第三级匹配网络的输出端与所述第三晶体管Q3的基极连接，所述第三晶体管Q3的发射极接地且集电极与所述输出匹配网络的输入端连接，所述输出匹配网络的输出端用于输出信号RFout；The input end of the first-stage matching network is used to connect the input signal RFin, the output end of the first-stage matching network is connected to the base of the first transistor Q1, and the emitter of the first transistor Q1 is grounded and the collector is grounded. connected to the input end of the second-stage matching network, the output end of the second-stage matching network is connected to the base of the second transistor Q3, the emitter of the second-stage transistor Q2 is grounded and the collector is connected to the The input terminal of the third-level matching network is connected, the output terminal of the third-level matching network is connected to the base of the third transistor Q3, the emitter of the third transistor Q3 is grounded and the collector is matched with the output The input end of the network is connected, and the output end of the output matching network is used to output signal RFout;
所述第一级匹配网络包括谐振单元，所述谐振单元包括第一电容C1、第一电阻R1和第一电感L1，所述第一电容C1的一端和所述第一晶体管Q1的基极并联且连接节点用于输入所述输入信号RFin，所述第一电容C1的另一端与所述第一电感L1的一端连接，所述第一电感L1的另一端接地，所述第一电阻R1并联在所述第一电感L1的两端。The first stage matching network includes a resonant unit, the resonant unit includes a first capacitor C1, a first resistor R1 and a first inductor L1, one end of the first capacitor C1 is connected in parallel with the base of the first transistor Q1 And the connection node is used to input the input signal RFin, the other end of the first capacitor C1 is connected to one end of the first inductor L1, the other end of the first inductor L1 is grounded, and the first resistor R1 is connected in parallel at both ends of the first inductor L1.
进一步地，所述第一级匹配网络还包括第二电容C2、第三电容C3以及第二电感L2，所述第二电容C2的一端与所述第二电感L2的一端、所述第三电容C3的一端相连接，所述第二电容C2的一端与所述连接节点连接，所述第三电容C3的另一端与所述第一晶体管Q1的基极连接，所述第二电感L2的另一端接地。Further, the first stage matching network further includes a second capacitor C2, a third capacitor C3, and a second inductor L2, one end of the second capacitor C2 is connected to one end of the second inductor L2, the third capacitor One end of C3 is connected, one end of the second capacitor C2 is connected to the connection node, the other end of the third capacitor C3 is connected to the base of the first transistor Q1, and the other end of the second inductor L2 One end is grounded.
进一步地，还包括第二电阻R2和负反馈网络，所述第二电阻R2串联在所述第三电容C3和所述第一晶体管Q1的基极之间，所述负反馈网络连接在所述第一晶体管Q1的集电极和基极之间，并与所述第二电阻R2并联。Further, it also includes a second resistor R2 and a negative feedback network, the second resistor R2 is connected in series between the third capacitor C3 and the base of the first transistor Q1, and the negative feedback network is connected to the Between the collector and the base of the first transistor Q1, and in parallel with the second resistor R2.
进一步地，所述负反馈网络包括第三电阻R3和第四电容C4，其中所述第三电阻R3的一端与所述第一晶体管Q1的基极连接，所述第三电阻R3的另一端与所述第四电容C4的一端连接，所述第四电容C4的另一端与所述第一晶体管Q1的集电极连接。Further, the negative feedback network includes a third resistor R3 and a fourth capacitor C4, wherein one end of the third resistor R3 is connected to the base of the first transistor Q1, and the other end of the third resistor R3 is connected to the base of the first transistor Q1. One end of the fourth capacitor C4 is connected, and the other end of the fourth capacitor C4 is connected to the collector of the first transistor Q1.
进一步地，所述第二级匹配网络包括第五电容C5、第六电容C6、第三电感L3以及第四电感L4；Further, the second-level matching network includes a fifth capacitor C5, a sixth capacitor C6, a third inductor L3, and a fourth inductor L4;
所述第五电容C5和所述第六电容C6串联在所述第一晶体管Q1的集电极和所述第二晶体管Q2的基极之间，所述第三电感L3的一端连接所述第一晶体管Q1的集电极且另一端连接电压信号Vcc1，所述第四电感L4的一端连接在所述第五电容C5和所述第六电容C6之间且另一端接地；The fifth capacitor C5 and the sixth capacitor C6 are connected in series between the collector of the first transistor Q1 and the base of the second transistor Q2, and one end of the third inductor L3 is connected to the first The collector of the transistor Q1 and the other end are connected to the voltage signal Vcc1, one end of the fourth inductor L4 is connected between the fifth capacitor C5 and the sixth capacitor C6, and the other end is grounded;
其中在所述第六电容C6和所述第二晶体管Q2的基极之间还串联有第四电阻R4。A fourth resistor R4 is connected in series between the sixth capacitor C6 and the base of the second transistor Q2.
进一步地，所述第三级匹配网络包括第七电容C7、第八电容C8、第五电感L5以及第六电感L6；Further, the third-level matching network includes a seventh capacitor C7, an eighth capacitor C8, a fifth inductor L5, and a sixth inductor L6;
所述第七电容C7和所述第八电容C8串联在所述第二晶体管Q2的集电极和所述第三晶体管Q3的基极之间，所述第五电感L5的一端连接所述第二晶体 管Q2的集电极且另一端连接电压信号Vcc2，所述第六电感L6的一端连接在所述第七电容C7和所述第八电容C8之间且另一端接地；The seventh capacitor C7 and the eighth capacitor C8 are connected in series between the collector of the second transistor Q2 and the base of the third transistor Q3, and one end of the fifth inductor L5 is connected to the second The collector of the transistor Q2 and the other end are connected to the voltage signal Vcc2, one end of the sixth inductor L6 is connected between the seventh capacitor C7 and the eighth capacitor C8, and the other end is grounded;
其中在所述第八电容C8和所述第三晶体管Q3的基极之间还串联有第五电阻R5。A fifth resistor R5 is connected in series between the eighth capacitor C8 and the base of the third transistor Q3.
进一步地，所述输出匹配网络包括第九电容C9、第十电容C10、第七电感L7以及第八电感L8；Further, the output matching network includes a ninth capacitor C9, a tenth capacitor C10, a seventh inductor L7, and an eighth inductor L8;
所述第九电容C9和所述第十电容C10串联且串联的一端与所述第三晶体管Q3的集电极，串联的另一端用于输出信号RFout，所述第七电感L7的一端连接所述第三晶体管Q3的集电极且另一端连接电压信号Vcc3，所述第八电感L8的一端连接在所述第九电容C9和所述第十电容C10之间且另一端接地。The ninth capacitor C9 and the tenth capacitor C10 are connected in series, and one end of the series is connected to the collector of the third transistor Q3, and the other end of the series is used to output signal RFout, and one end of the seventh inductor L7 is connected to the The collector and the other end of the third transistor Q3 are connected to the voltage signal Vcc3, one end of the eighth inductor L8 is connected between the ninth capacitor C9 and the tenth capacitor C10, and the other end is grounded.
进一步地，还包括分别为所述第一晶体管Q 1的基极、所述第二晶体管Q2的基极以及所述第三晶体管Q3的基极提供偏置电压的第一偏置电路、第二偏置电路以及第三偏置电路；Further, it also includes a first bias circuit, a second bias circuit, a second a bias circuit and a third bias circuit;
所述第一偏置电路、第二偏置电路以及第三偏置电路均为相同的偏置电路结构。The first bias circuit, the second bias circuit and the third bias circuit all have the same bias circuit structure.
进一步地，所述偏置电路结构包括第四晶体管Q4至第八晶体管Q8、第六电阻R6至第15电阻R15，第十一电容C11至第十三电容C13；Further, the bias circuit structure includes a fourth transistor Q4 to an eighth transistor Q8, a sixth resistor R6 to a fifteenth resistor R15, and an eleventh capacitor C11 to a thirteenth capacitor C13;
其中，所述第四晶体管Q4的集电极与所述第五晶体管Q5的基极、所述第六电阻的一端连接，所述第五晶体管Q5的集电极与所述第六晶体管Q6的基极、所述第八电阻R8的一端连接，所述第六晶体管Q6的集电极与所述第七晶体管Q7的基极、所述第十电阻R10的一端连接，所述第六电阻R6的另一端与所述第八电阻R8的另一端、第十电阻R10的另一端均连接至电压信号Vreg，所述第四晶体管Q4的发射极、第五晶体管Q4的发射极以及第六晶体管Q6的发射极分别通过所述第七电阻R7、第九电阻R9以及第十一电阻R11接地；所述第四晶体管Q4的基极与所述第十四电阻R14的一端连接，所述第十四电阻R14的另一端与所述第十二电阻R12的一端、所述第十三电容C13的一端、所述第七晶体管Q7的发射极并联，所述第七晶体管Q7的集电极连接电压信号Vbat，所述第十二电阻R12的另一端与所述第八晶体管Q8的集电极和基极连接，所述第八晶体管Q8的发射极通过所述第十三电阻R13接地，所述第十三电容C13 的另一端接地，所述第十一电容C11的一端与所述第七晶体管Q7的基极并联且另一端接地，所述第十二电容C12的一端与所述第七晶体管Q7的发射极并联且另一端接地，所述第十五电阻R15的一端连接所述第七晶体管Q7的发射极且另一端用于输出偏置电压。Wherein, the collector of the fourth transistor Q4 is connected to the base of the fifth transistor Q5 and one end of the sixth resistor, and the collector of the fifth transistor Q5 is connected to the base of the sixth transistor Q6 , one end of the eighth resistor R8 is connected, the collector of the sixth transistor Q6 is connected to the base of the seventh transistor Q7, and one end of the tenth resistor R10 is connected, and the other end of the sixth resistor R6 The other end of the eighth resistor R8 and the other end of the tenth resistor R10 are both connected to the voltage signal Vreg, the emitter of the fourth transistor Q4, the emitter of the fifth transistor Q4 and the emitter of the sixth transistor Q6 The seventh resistor R7, the ninth resistor R9 and the eleventh resistor R11 are respectively grounded; the base of the fourth transistor Q4 is connected to one end of the fourteenth resistor R14, and the fourteenth resistor R14 The other end is connected in parallel with one end of the twelfth resistor R12, one end of the thirteenth capacitor C13, and the emitter of the seventh transistor Q7, the collector of the seventh transistor Q7 is connected to the voltage signal Vbat, and the The other end of the twelfth resistor R12 is connected to the collector and base of the eighth transistor Q8, the emitter of the eighth transistor Q8 is grounded through the thirteenth resistor R13, and the thirteenth capacitor C13 The other end is grounded, one end of the eleventh capacitor C11 is connected in parallel with the base of the seventh transistor Q7 and the other end is grounded, one end of the twelfth capacitor C12 is connected in parallel with the emitter of the seventh transistor Q7 and The other end is grounded, one end of the fifteenth resistor R15 is connected to the emitter of the seventh transistor Q7 and the other end is used for outputting a bias voltage.
有益效果：本发明的应用于5G-Sub6G频段通信系统的射频功率放大器中，包括依次串联连接的第一级匹配网络、第一晶体管Q1、第二级匹配网络、第二晶体管Q2、第三级匹配网络、第三晶体管Q3以及输出匹配网络；所述第一级匹配网络的输入端用于连接输入信号RFin，所述第一级匹配网络的输出端与第一晶体管Q1的基极连接，所述第一晶体管Q1的发射极接地且集电极与第二级匹配网络的输入端连接，所述第二级匹配网络的输出端与所述第二晶体管Q3的基极连接，所述第二级晶体管Q2的发射极接地且集电极与所述第三级匹配网络的输入端连接，所述第三级匹配网络的输出端与所述第三晶体管Q3的基极连接，所述第三晶体管Q3的发射极接地且集电极与所述输出匹配网络的输入端连接，所述输出匹配网络的输出端用于输出信号RFout；所述第一级匹配网络包括谐振单元，所述谐振单元包括第一电容C1、第一电阻R1和第一电感L1，所述第一电容C1的一端和所述第一晶体管Q1的基极并联且连接节点用于输入所述输入信号RFin，所述第一电容C1的另一端与所述第一电感L1的一端连接，所述第一电感L1的另一端接地，所述第一电阻R1并联在所述第一电感L1的两端，由此通过谐振单元的作用，可以提高增益平坦度。Beneficial effects: The radio frequency power amplifier applied to the 5G-Sub6G frequency band communication system of the present invention includes a first-level matching network, a first transistor Q1, a second-level matching network, a second transistor Q2, and a third-level matching network connected in series in sequence. Matching network, third transistor Q3, and output matching network; the input end of the first-stage matching network is used to connect the input signal RFin, and the output end of the first-stage matching network is connected to the base of the first transistor Q1, so The emitter of the first transistor Q1 is grounded and the collector is connected to the input end of the second stage matching network, the output end of the second stage matching network is connected to the base electrode of the second transistor Q3, and the second stage The emitter of the transistor Q2 is grounded and the collector is connected to the input terminal of the third-level matching network, the output terminal of the third-level matching network is connected to the base of the third transistor Q3, and the third transistor Q3 The emitter is grounded and the collector is connected to the input end of the output matching network, the output end of the output matching network is used to output the signal RFout; the first stage matching network includes a resonant unit, and the resonant unit includes a first Capacitor C1, first resistor R1 and first inductor L1, one end of the first capacitor C1 is connected in parallel with the base of the first transistor Q1 and connected to a node for inputting the input signal RFin, the first capacitor C1 The other end of the first inductance L1 is connected to one end of the first inductance L1, the other end of the first inductance L1 is grounded, and the first resistor R1 is connected in parallel to both ends of the first inductance L1, thus through the function of the resonant unit , which can improve gain flatness.
附图说明Description of drawings
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。The technical solution and beneficial effects of the present invention will be apparent through the detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings.
图1是本发明实施例提供的射频功率放大器的原理图；FIG. 1 is a schematic diagram of a radio frequency power amplifier provided by an embodiment of the present invention;
图2是本发明实施例提供的偏置单路结构的电路示意图；FIG. 2 is a schematic circuit diagram of a bias single-circuit structure provided by an embodiment of the present invention;
图3是第一级匹配网络具有谐振单元和不具有谐振单元时第一级放大器的增益趋势仿真波形图；Fig. 3 is the simulation waveform diagram of the gain trend of the first-stage amplifier when the first-stage matching network has a resonant unit and does not have a resonant unit;
图4是第一级匹配网络具有谐振单元和不具有谐振单元时射频功率放大器的输入回波损耗和输出回波损耗的仿真波形图。Fig. 4 is a simulation waveform diagram of the input return loss and output return loss of the radio frequency power amplifier when the first stage matching network has a resonant unit and does not have a resonant unit.
具体实施方式Detailed ways
请参照图式，其中相同的组件符号代表相同的组件，本发明的原理是以实施在一适当的运算环境中来举例说明。以下的说明是基于所例示的本发明具体实施例，其不应被视为限制本发明未在此详述的其它具体实施例。Referring to the drawings, wherein like reference numerals represent like components, the principles of the present invention are exemplified when implemented in a suitable computing environment. The following description is based on illustrated specific embodiments of the invention, which should not be construed as limiting other specific embodiments of the invention not described in detail herein.
在5G通信技术中，5G频段划分为两大范围，分别为450MHz～6GHz(简称Sub6G)和24.25GHz～52.6GHz(毫米波频段)，本发明实施例的射频功率放大器主要应用于工作在Sub6G频段的5G无线通信系统。In 5G communication technology, the 5G frequency band is divided into two major ranges, namely 450MHz～6GHz (referred to as Sub6G) and 24.25GHz～52.6GHz (millimeter wave frequency band). 5G wireless communication system.
参阅图1和图2，本发明实施例中的应用于5G-Sub6G频段通信系统的射频功率放大器100，包括依次串联连接的第一级匹配网络11、第一晶体管Q1、第二级匹配网络12、第二晶体管Q2、第三级匹配网络13、第三晶体管Q3以及输出匹配网络14。Referring to FIG. 1 and FIG. 2, the radio frequency power amplifier 100 applied to the 5G-Sub6G frequency band communication system in the embodiment of the present invention includes a first-stage matching network 11, a first transistor Q1, and a second-stage matching network 12 connected in series in sequence. , the second transistor Q2, the third stage matching network 13, the third transistor Q3 and the output matching network 14.
其中，所述第一级匹配网络11的输入端用于连接输入信号RFin，所述第一级匹配网络11的输出端与第一晶体管Q1的基极连接，所述第一晶体管Q1的发射极接地且集电极与第二级匹配网络12的输入端连接，所述第二级匹配网络12的输出端与所述第二晶体管Q3的基极连接，所述第二级晶体管Q2的发射极接地且集电极与所述第三级匹配网络13的输入端连接，所述第三级匹配网络13的输出端与所述第三晶体管Q3的基极连接，所述第三晶体管Q3的发射极接地且集电极与所述输出匹配网络14的输入端连接，所述输出匹配网络14的输出端用于输出信号RFout。Wherein, the input end of the first-stage matching network 11 is used to connect the input signal RFin, the output end of the first-stage matching network 11 is connected to the base of the first transistor Q1, and the emitter of the first transistor Q1 Grounded and the collector is connected to the input end of the second-stage matching network 12, the output end of the second-stage matching network 12 is connected to the base of the second transistor Q3, and the emitter of the second-stage transistor Q2 is grounded And the collector is connected to the input terminal of the third-level matching network 13, the output terminal of the third-level matching network 13 is connected to the base of the third transistor Q3, and the emitter of the third transistor Q3 is grounded And the collector is connected to the input end of the output matching network 14, and the output end of the output matching network 14 is used to output the signal RFout.
其中，第一晶体管Q1、第二晶体管Q2以及第三晶体管Q3分别用于实现第一级放大器、第二级放大器和第三级放大器的放大功能，用于对射频输入信号RFin进行放大，即第一晶体管Q1对应为第一级放大器的实现电路，第二晶体管Q2对应为第二级放大器的实现电路，第三晶体管Q3对应为第三级放大器的实现电路，放大后的信号经由输出匹配网络14输出。可以理解的是，第一晶体管Q1、第二晶体管Q2以及第三晶体管Q3的数量可以是一个，也可以是多个，当具有多个时，比如，当具有多个第一晶体管Q1时，多个第一晶体管Q1为并联连接结构，即多个晶体管Q1的基极并联连接，集电极并联连接，发射极并联连接。Among them, the first transistor Q1, the second transistor Q2 and the third transistor Q3 are respectively used to realize the amplification functions of the first-stage amplifier, the second-stage amplifier and the third-stage amplifier, and are used to amplify the radio frequency input signal RFin, that is, the first One transistor Q1 corresponds to the realization circuit of the first-stage amplifier, the second transistor Q2 corresponds to the realization circuit of the second-stage amplifier, and the third transistor Q3 corresponds to the realization circuit of the third-stage amplifier, and the amplified signal passes through the output matching network 14 output. It can be understood that the number of the first transistor Q1, the second transistor Q2 and the third transistor Q3 may be one or more, and when there are multiple transistors, for example, when there are multiple first transistors Q1, the number The first transistor Q1 has a parallel connection structure, that is, the bases of multiple transistors Q1 are connected in parallel, the collectors are connected in parallel, and the emitters are connected in parallel.
其中，所述第一级匹配网络11作为输入阻抗匹配，其包括谐振单元11，所述谐振单元11包括第一电容C1、第一电阻R1和第一电感L1，所述第一电 容C1的一端和所述第一晶体管Q1的基极并联且连接节点用于输入所述输入信号RFin，所述第一电容C1的另一端与所述第一电感L1的一端连接，所述第一电感L1的另一端接地，所述第一电阻R1并联在所述第一电感L1的两端。由此，第一电容C1与第一电感L1串联到地组成一个谐振单元，可调节射频功率放大器的增益平坦度。Wherein, the first stage matching network 11 is used as an input impedance matching, and it includes a resonant unit 11, and the resonant unit 11 includes a first capacitor C1, a first resistor R1 and a first inductor L1, and one end of the first capacitor C1 connected in parallel with the base of the first transistor Q1 and connected to a node for inputting the input signal RFin, the other end of the first capacitor C1 is connected to one end of the first inductor L1, and the first inductor L1 The other end is grounded, and the first resistor R1 is connected in parallel with both ends of the first inductor L1. Therefore, the first capacitor C1 and the first inductor L1 are connected in series to the ground to form a resonant unit, which can adjust the gain flatness of the radio frequency power amplifier.
更具体而言，在没有谐振单元的情况下，每一级放大器的增益趋势都是增益随频率增大而降低，即低频增益高、高频增益低。若三级放大器的增益趋势都是如此，那么三级放大器级联之后，增益叠加在一起，增益趋势也会叠加，将产生低频增益比高频增益高出很多的情况。本发明实施例中，通过在第一晶体管Q1之前的输入阻抗匹配网络中增加谐振单元11，从而可以将第一级放大器的增益改为逆趋势，即低频增益低、高频增益高，也就是通过设置谐振单元11，可以使得第一级放大器的增益趋势为低频增益低、高频增益高。如图3所示的仿真图，其中，图3的a图表示在第一级匹配网络中增加谐振单元时的第一级放大器的增益趋势仿真波形图，图3的b图表示在第一级匹配网络中没有谐振单元的第一级放大器的增益趋势仿真波形图，其中纵坐标S(2，1)表示增益，横坐标表示频率，从图中可看出，在3.9GHz处，没有谐振单元时的放大器的增益为39.347，而具有谐振单元时的第一级放大器的增益为30.907，同理地，在4.4GHz、和4.7GHz处，具有谐振单元的第一级放大器的增益都比没有谐振单元的放大器的增益要低，即实现了低频增益低的目的，而在5.0GHz处，具有谐振单元的第一级放大器的增益比没有谐振单元的放大器增益稍高，即实现了高频增益高，从图中的仿真波形图也可以明显看出，与没有谐振单元的放大器的增益趋势相比，本发明实施例具有谐振单元的第一级放大器的增益趋势为低频增益低、高频增益高。More specifically, in the absence of a resonant unit, the gain trend of each amplifier stage is that the gain decreases as the frequency increases, that is, the low-frequency gain is high and the high-frequency gain is low. If the gain trends of the three-stage amplifiers are all the same, then after the three-stage amplifiers are cascaded, the gains will be superimposed, and the gain trends will also superimpose, resulting in a situation where the low-frequency gain is much higher than the high-frequency gain. In the embodiment of the present invention, by adding a resonant unit 11 to the input impedance matching network before the first transistor Q1, the gain of the first-stage amplifier can be reversed, that is, the low-frequency gain is low and the high-frequency gain is high, that is, By setting the resonant unit 11, the gain trend of the first stage amplifier can be made to be low in low frequency gain and high in high frequency gain. The simulation diagram shown in Figure 3, wherein, Figure a of Figure 3 shows the gain trend simulation waveform of the first-stage amplifier when the resonant unit is added to the first-stage matching network, and Figure b of Figure 3 shows that in the first stage The gain trend simulation waveform diagram of the first-stage amplifier without a resonant unit in the matching network, where the ordinate S(2, 1) represents the gain, and the abscissa represents the frequency. It can be seen from the figure that there is no resonant unit at 3.9GHz The gain of the amplifier at the time is 39.347, while the gain of the first-stage amplifier with the resonance unit is 30.907. Similarly, at 4.4GHz and 4.7GHz, the gain of the first-stage amplifier with the resonance unit is higher than that without resonance The gain of the amplifier of the unit is low, that is, the low-frequency gain is achieved, and at 5.0GHz, the gain of the first-stage amplifier with the resonant unit is slightly higher than that of the amplifier without the resonant unit, that is, the high-frequency gain is achieved. , it can also be clearly seen from the simulation waveform diagram in the figure that compared with the gain trend of the amplifier without the resonance unit, the gain trend of the first-stage amplifier with the resonance unit in the embodiment of the present invention is low in low frequency gain and high in high frequency gain .
另外，第二级放大器的增益趋势较为平坦，第三级放大器的增益趋势则仍为低频增益高、高频增益低，因此，本发明实施例中，三级放大器的增益叠加之后第一级放大器与第三级放大器的增益趋势相互弥补或者抵消，而由于第二级放大器的增益趋势较为平坦，从而最后的叠加结果则为一条平坦直线。因此，通过谐振单元11的作用，可以提高整体电路的增益平坦度。In addition, the gain trend of the second-stage amplifier is relatively flat, while the gain trend of the third-stage amplifier is still high in low-frequency gain and low in high-frequency gain. Therefore, in the embodiment of the present invention, after the gains of the three-stage amplifiers are superimposed and the gain trend of the third-stage amplifier make up or cancel each other, and because the gain trend of the second-stage amplifier is relatively flat, the final superposition result is a flat straight line. Therefore, through the function of the resonant unit 11, the gain flatness of the whole circuit can be improved.
此外，将增益趋势改为逆趋势会对整个电路带来的的负面影响，相比于在 其他级放大器前增加谐振单元，本发明实施例通过在第一级放大器之前(即第一级匹配网络)增加谐振单元11，可以降低此种负面影响。其中，以射频功率放大器的输入回波损耗S(1,1)和输出回波损耗S(2,1)两个参数为例，如图4所示，图4的a图表示在第一级匹配网络中增加谐振单元时的射频功率放大器100的输入回波损耗和输出回波损耗的仿真波形图，图4的b图表示在第一级匹配网络中没有谐振单元的射频功率放大器100的输入回波损耗和输出回波损耗的仿真波形图，其中，在增加谐振单元11之后，如图4的a图所示，输入回波损耗S(1,1)的最低值小于-20，电路匹配结果较好，因此即使增加谐振单元11，对整体的电路的影响较小。In addition, changing the gain trend to a reverse trend will have a negative impact on the entire circuit. Compared with adding a resonant unit before the other stage amplifiers, the embodiment of the present invention uses ) increasing the resonant unit 11 can reduce this negative effect. Among them, taking the two parameters of input return loss S(1,1) and output return loss S(2,1) of the RF power amplifier as an example, as shown in Figure 4, the diagram a of Figure 4 shows that in the first stage The simulation waveform diagram of the input return loss and output return loss of the RF power amplifier 100 when the resonant unit is added in the matching network, the b diagram of Fig. 4 shows the input of the RF power amplifier 100 without the resonant unit in the first-stage matching network The simulation waveform diagram of return loss and output return loss, wherein, after adding the resonant unit 11, as shown in figure a of Figure 4, the minimum value of the input return loss S(1,1) is less than -20, and the circuit matches The result is better, so even if the resonant unit 11 is added, the influence on the overall circuit is small.
其中第一电容C1对低频的增益影响较大，而第一电感L1对整体增益影响均较大，第一电阻R1与第一电感L1并联，通过设置不同大小的第一电阻R1可获得不同谐振的带宽。Among them, the first capacitor C1 has a greater influence on the low-frequency gain, and the first inductance L1 has a greater influence on the overall gain. The first resistor R1 is connected in parallel with the first inductance L1. Different resonances can be obtained by setting the first resistor R1 of different sizes. bandwidth.
进一步地，所述第一级匹配网络11还包括第二电容C2、第三电容C3以及第二电感L2，用于形成输入级的阻抗匹配。其中，所述第二电容C2的一端与所述第二电感L2的一端、所述第三电容C3的一端相连接，所述第二电容C2的一端与所述连接节点连接，所述第三电容C3的另一端与所述第一晶体管Q1的基极连接，所述第二电感L2的另一端接地。Further, the first-stage matching network 11 further includes a second capacitor C2, a third capacitor C3 and a second inductor L2 for forming impedance matching of the input stage. Wherein, one end of the second capacitor C2 is connected to one end of the second inductor L2 and one end of the third capacitor C3, one end of the second capacitor C2 is connected to the connection node, and the third The other end of the capacitor C3 is connected to the base of the first transistor Q1, and the other end of the second inductor L2 is grounded.
其中，在第一晶体管Q1的基极还串联有第二电阻R2，所述第二电阻R2串联在所述第三电容C3和所述第一晶体管Q1的基极之间。射频功率放大器100还包括反馈网络15，所述负反馈网络15连接在所述第一晶体管Q1的集电极和基极之间，并与所述第二电阻R2并联。可选地，负反馈网络15可以采用RC结构实现，例如可以包括第三电阻R3和第四电容C4，其中所述第三电阻R3的一端与所述第一晶体管Q1的基极连接，所述第三电阻R3的另一端与所述第四电容C4的一端连接，所述第四电容C4的另一端与所述第一晶体管Q1的集电极连接。Wherein, a second resistor R2 is connected in series at the base of the first transistor Q1, and the second resistor R2 is connected in series between the third capacitor C3 and the base of the first transistor Q1. The RF power amplifier 100 further includes a feedback network 15, the negative feedback network 15 is connected between the collector and the base of the first transistor Q1, and connected in parallel with the second resistor R2. Optionally, the negative feedback network 15 can be implemented with an RC structure, for example, it can include a third resistor R3 and a fourth capacitor C4, wherein one end of the third resistor R3 is connected to the base of the first transistor Q1, and the The other end of the third resistor R3 is connected to one end of the fourth capacitor C4, and the other end of the fourth capacitor C4 is connected to the collector of the first transistor Q1.
通过负反馈网络15，可以调节第一级放大器的增益平坦度并增加第一级放大器和整体功率放大器的稳定性，通过设置不同阻值的第三电阻R3可调节反馈深度。Through the negative feedback network 15, the gain flatness of the first-stage amplifier can be adjusted and the stability of the first-stage amplifier and the overall power amplifier can be increased, and the feedback depth can be adjusted by setting the third resistor R3 with different resistance values.
进一步地，所述第二级匹配网络12包括第五电容C5、第六电容C6、第三 电感L3以及第四电感L4。所述第五电容C5和所述第六电容C6串联在所述第一晶体管Q1的集电极和所述第二晶体管Q2的基极之间，所述第三电感L3的一端连接所述第一晶体管Q1的集电极且另一端连接电压信号Vcc1，所述第四电感L4的一端连接在所述第五电容C5和所述第六电容C6之间且另一端接地。其中在所述第六电容C6和所述第二晶体管Q2的基极之间还串联有第四电阻R4。Further, the second stage matching network 12 includes a fifth capacitor C5, a sixth capacitor C6, a third inductor L3 and a fourth inductor L4. The fifth capacitor C5 and the sixth capacitor C6 are connected in series between the collector of the first transistor Q1 and the base of the second transistor Q2, and one end of the third inductor L3 is connected to the first The collector and the other end of the transistor Q1 are connected to the voltage signal Vcc1, one end of the fourth inductor L4 is connected between the fifth capacitor C5 and the sixth capacitor C6, and the other end is grounded. A fourth resistor R4 is connected in series between the sixth capacitor C6 and the base of the second transistor Q2.
所述第三级匹配网络13包括第七电容C7、第八电容C8、第五电感L5以及第六电感L6。所述第七电容C7和所述第八电容C8串联在所述第二晶体管Q2的集电极和所述第三晶体管Q3的基极之间，所述第五电感L5的一端连接所述第二晶体管Q2的集电极且另一端连接电压信号Vcc2，所述第六电感L6的一端连接在所述第七电容C7和所述第八电容C8之间且另一端接地。其中在所述第八电容C8和所述第三晶体管Q3的基极之间还串联有第五电阻R5。The third stage matching network 13 includes a seventh capacitor C7, an eighth capacitor C8, a fifth inductor L5 and a sixth inductor L6. The seventh capacitor C7 and the eighth capacitor C8 are connected in series between the collector of the second transistor Q2 and the base of the third transistor Q3, and one end of the fifth inductor L5 is connected to the second The collector and the other end of the transistor Q2 are connected to the voltage signal Vcc2, one end of the sixth inductor L6 is connected between the seventh capacitor C7 and the eighth capacitor C8, and the other end is grounded. A fifth resistor R5 is connected in series between the eighth capacitor C8 and the base of the third transistor Q3.
所述输出匹配网络14包括第九电容C9、第十电容C10、第七电感L7以及第八电感L8。所述第九电容C9和所述第十电容C10串联且串联的一端与所述第三晶体管Q3的集电极，串联的另一端用于输出信号RFout，所述第七电感L7的一端连接所述第三晶体管Q3的集电极且另一端连接电压信号Vcc3，所述第八电感L8的一端连接在所述第九电容C9和所述第十电容C10之间且另一端接地。The output matching network 14 includes a ninth capacitor C9, a tenth capacitor C10, a seventh inductor L7 and an eighth inductor L8. The ninth capacitor C9 and the tenth capacitor C10 are connected in series, and one end of the series is connected to the collector of the third transistor Q3, and the other end of the series is used to output signal RFout, and one end of the seventh inductor L7 is connected to the The collector and the other end of the third transistor Q3 are connected to the voltage signal Vcc3, one end of the eighth inductor L8 is connected between the ninth capacitor C9 and the tenth capacitor C10, and the other end is grounded.
因此，本发明实施例中的匹配网络均为LC结构，且通过第二电阻R2、第四电阻R4以及第五电阻R5有利于增加每一级放大器的稳定性，并降低每一级放大器的匹配难度。Therefore, the matching networks in the embodiments of the present invention are all LC structures, and the second resistor R2, the fourth resistor R4, and the fifth resistor R5 are beneficial to increase the stability of each stage of amplifiers and reduce the matching of each stage of amplifiers. difficulty.
进一步地，射频功率放大器100还包括分别为所述第一晶体管Q 1的基极、所述第二晶体管Q2的基极以及所述第三晶体管Q3的基极提供偏置电压的第一偏置电路16、第二偏置电路17以及第三偏置电路18。所述第一偏置电路、第二偏置电路以及第三偏置电路均为相同的偏置电路结构，当然，在其他实施方式中，各偏置电路也可以采用不同的电路结构实现。Further, the radio frequency power amplifier 100 also includes a first bias voltage for respectively providing bias voltages for the base of the first transistor Q1, the base of the second transistor Q2, and the base of the third transistor Q3. circuit 16 , a second bias circuit 17 and a third bias circuit 18 . The first bias circuit, the second bias circuit and the third bias circuit all have the same bias circuit structure. Of course, in other implementation manners, each bias circuit may also be implemented by using a different circuit structure.
如图2所示，第一偏置电路16、第二偏置电路17以及第三偏置电路18可以均采用同一偏置电路结构实现，该偏置电路结构包括第四晶体管Q4至第八晶体管Q8、第六电阻R6至第15电阻R15，第十一电容C11至第十三电容C13。As shown in FIG. 2, the first bias circuit 16, the second bias circuit 17, and the third bias circuit 18 can all be realized by using the same bias circuit structure, and the bias circuit structure includes a fourth transistor Q4 to an eighth transistor Q8, the sixth resistor R6 to the fifteenth resistor R15, the eleventh capacitor C11 to the thirteenth capacitor C13.
其中，所述第四晶体管Q4的集电极与所述第五晶体管Q5的基极、所述第六电阻的一端连接，所述第五晶体管Q5的集电极与所述第六晶体管Q6的基极、所述第八电阻R8的一端连接，所述第六晶体管Q6的集电极与所述第七晶体管Q7的基极、所述第十电阻R10的一端连接，所述第六电阻R6的另一端与所述第八电阻R8的另一端、第十电阻R10的另一端均连接至电压信号Vreg，所述第四晶体管Q4的发射极、第五晶体管Q4的发射极以及第六晶体管Q6的发射极分别通过所述第七电阻R7、第九电阻R9以及第十一电阻R11接地；所述第四晶体管Q4的基极与所述第十四电阻R14的一端连接，所述第十四电阻R14的另一端与所述第十二电阻R12的一端、所述第十三电容C13的一端、所述第七晶体管Q7的发射极并联，所述第七晶体管Q7的集电极连接电压信号Vbat，所述第十二电阻R12的另一端与所述第八晶体管Q8的集电极和基极连接，所述第八晶体管Q8的发射极通过所述第十三电阻R13接地，所述第十三电容C13的另一端接地，所述第十一电容C11的一端与所述第七晶体管Q7的基极并联且另一端接地，所述第十二电容C12的一端与所述第七晶体管Q7的发射极并联且另一端接地，所述第十五电阻R15的一端连接所述第七晶体管Q7的发射极且另一端作为输出端用于对第一晶体管Q1、第二晶体管Q2或第三晶体管Q3输出偏置电压Vb。Wherein, the collector of the fourth transistor Q4 is connected to the base of the fifth transistor Q5 and one end of the sixth resistor, and the collector of the fifth transistor Q5 is connected to the base of the sixth transistor Q6 , one end of the eighth resistor R8 is connected, the collector of the sixth transistor Q6 is connected to the base of the seventh transistor Q7, and one end of the tenth resistor R10 is connected, and the other end of the sixth resistor R6 The other end of the eighth resistor R8 and the other end of the tenth resistor R10 are both connected to the voltage signal Vreg, the emitter of the fourth transistor Q4, the emitter of the fifth transistor Q4 and the emitter of the sixth transistor Q6 The seventh resistor R7, the ninth resistor R9 and the eleventh resistor R11 are respectively grounded; the base of the fourth transistor Q4 is connected to one end of the fourteenth resistor R14, and the fourteenth resistor R14 The other end is connected in parallel with one end of the twelfth resistor R12, one end of the thirteenth capacitor C13, and the emitter of the seventh transistor Q7, the collector of the seventh transistor Q7 is connected to the voltage signal Vbat, and the The other end of the twelfth resistor R12 is connected to the collector and base of the eighth transistor Q8, the emitter of the eighth transistor Q8 is grounded through the thirteenth resistor R13, and the thirteenth capacitor C13 The other end is grounded, one end of the eleventh capacitor C11 is connected in parallel with the base of the seventh transistor Q7 and the other end is grounded, one end of the twelfth capacitor C12 is connected in parallel with the emitter of the seventh transistor Q7 and The other end is grounded, one end of the fifteenth resistor R15 is connected to the emitter of the seventh transistor Q7 and the other end is used as an output end for outputting a bias voltage to the first transistor Q1, the second transistor Q2 or the third transistor Q3 Vb.
当射频功率放大器100的输入功率增大时，第一至第三晶体管的基极电流增大，导致基极电位降低，同时部分射频主路线上的动态信号会泄露至偏置电路，通过本实施例的偏置电路，信号经电阻R15流至晶体管Q7，通过电容C11、C12到地，或信号经电阻14流至晶体管Q4，通过电容C13到地，因此偏置电路不受射频信号影响。射频主线路上的晶体管Q1至Q3因其自热效应，使得基极电位下降，因此晶体管Q1至Q3的基极静态电流随之增大，晶体管Q1至Q3的基极-发射极间的电压小，因此，晶体管Q4的基极电位减小，晶体管Q4的集电极电流下降，电阻R6与晶体管Q4串联，电阻R6上的电流减小，即R6两端所加电压减小；而晶体管Q5的基极电压随之升高，晶体管Q5集电极电流增大，电阻R8两端所加电压增大；晶体管Q6的基极电压随之降低，晶体管Q6的集电极电流降低，电阻R10两端所加电压减小；晶体管Q7的基极电压增大，从射频主线路泄露进晶体管Q7的动态信号使得晶体管Q7的基极电压降低。 本实施例的偏置电路结构通过反馈结构，使得射频主线路上晶体管Q1至Q3的偏置电压基本保持不变。通过调节电阻R6至电阻R11的电阻值大小，可以调节各电阻对应串联电路上的晶体管的基极电位大小，达到控制偏置电路电流大小与电压补偿值。通过本发明实施例的偏置电路，可以对功率放大器中的晶体管Q1至Q3的热效应有较好的改善，并且可以提供稳定的电流。When the input power of the radio frequency power amplifier 100 increases, the base currents of the first to third transistors increase, causing the base potential to decrease, and at the same time, some dynamic signals on the main radio frequency line will leak to the bias circuit. Through this implementation In the example of the bias circuit, the signal flows to the transistor Q7 through the resistor R15, and then to the ground through the capacitors C11 and C12, or the signal flows to the transistor Q4 through the resistor 14, and then to the ground through the capacitor C13, so the bias circuit is not affected by the radio frequency signal. Due to the self-heating effect of the transistors Q1 to Q3 on the main radio frequency line, the base potential drops, so the base quiescent current of the transistors Q1 to Q3 increases accordingly, and the base-emitter voltage of the transistors Q1 to Q3 is small, so , the base potential of the transistor Q4 decreases, the collector current of the transistor Q4 decreases, the resistor R6 is connected in series with the transistor Q4, the current on the resistor R6 decreases, that is, the voltage applied across the R6 decreases; and the base voltage of the transistor Q5 As it increases, the collector current of transistor Q5 increases, and the voltage applied across resistor R8 increases; the base voltage of transistor Q6 decreases accordingly, the collector current of transistor Q6 decreases, and the voltage applied across resistor R10 decreases The base voltage of the transistor Q7 increases, and the dynamic signal leaked into the transistor Q7 from the radio frequency main line makes the base voltage of the transistor Q7 decrease. The bias circuit structure of this embodiment keeps the bias voltages of the transistors Q1 to Q3 on the main radio frequency line basically unchanged through the feedback structure. By adjusting the resistance values of the resistors R6 to R11, the base potentials of the transistors in the series circuit corresponding to each resistor can be adjusted, so as to control the current and voltage compensation value of the bias circuit. Through the bias circuit of the embodiment of the present invention, the heat effect of the transistors Q1 to Q3 in the power amplifier can be better improved, and a stable current can be provided.
以上对本发明实施例所提供的一种应用于5G-Sub6G频段通信系统的射频功率放大器进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。The radio frequency power amplifier applied to the 5G-Sub6G frequency band communication system provided by the embodiment of the present invention has been introduced in detail above. In this paper, specific examples are used to illustrate the principle and implementation of the present invention. The description of the above embodiments It is only used to help understand the method of the present invention and its core idea; at the same time, for those skilled in the art, according to the idea of the present invention, there will be changes in the specific implementation and scope of application. In summary, this The content of the description should not be construed as limiting the present invention.

Claims (9)

  1. 一种应用于5G-Sub6G频段通信系统的射频功率放大器，其特征在于，包括依次串联连接的第一级匹配网络、第一晶体管Q1、第二级匹配网络、第二晶体管Q2、第三级匹配网络、第三晶体管Q3以及输出匹配网络；A radio frequency power amplifier applied to a 5G-Sub6G frequency band communication system, characterized in that it includes a first-level matching network connected in series, a first transistor Q1, a second-level matching network, a second transistor Q2, and a third-level matching network network, the third transistor Q3 and an output matching network;
    所述第一级匹配网络的输入端用于连接输入信号RFin，所述第一级匹配网络的输出端与第一晶体管Q1的基极连接，所述第一晶体管Q1的发射极接地且集电极与第二级匹配网络的输入端连接，所述第二级匹配网络的输出端与所述第二晶体管Q3的基极连接，所述第二级晶体管Q2的发射极接地且集电极与所述第三级匹配网络的输入端连接，所述第三级匹配网络的输出端与所述第三晶体管Q3的基极连接，所述第三晶体管Q3的发射极接地且集电极与所述输出匹配网络的输入端连接，所述输出匹配网络的输出端用于输出信号RFout；The input end of the first-stage matching network is used to connect the input signal RFin, the output end of the first-stage matching network is connected to the base of the first transistor Q1, and the emitter of the first transistor Q1 is grounded and the collector is grounded. connected to the input end of the second-stage matching network, the output end of the second-stage matching network is connected to the base of the second transistor Q3, the emitter of the second-stage transistor Q2 is grounded and the collector is connected to the The input terminal of the third-level matching network is connected, the output terminal of the third-level matching network is connected to the base of the third transistor Q3, the emitter of the third transistor Q3 is grounded and the collector is matched with the output The input end of the network is connected, and the output end of the output matching network is used to output signal RFout;
    所述第一级匹配网络包括谐振单元，所述谐振单元包括第一电容C1、第一电阻R1和第一电感L1，所述第一电容C1的一端和所述第一晶体管Q1的基极并联且连接节点用于输入所述输入信号RFin，所述第一电容C1的另一端与所述第一电感L1的一端连接，所述第一电感L1的另一端接地，所述第一电阻R1并联在所述第一电感L1的两端。The first stage matching network includes a resonant unit, the resonant unit includes a first capacitor C1, a first resistor R1 and a first inductor L1, one end of the first capacitor C1 is connected in parallel with the base of the first transistor Q1 And the connection node is used to input the input signal RFin, the other end of the first capacitor C1 is connected to one end of the first inductor L1, the other end of the first inductor L1 is grounded, and the first resistor R1 is connected in parallel at both ends of the first inductor L1.
  2. 根据权利要求1所述的射频功率放大器，其特征在于，所述第一级匹配网络还包括第二电容C2、第三电容C3以及第二电感L2，所述第二电容C2的一端与所述第二电感L2的一端、所述第三电容C3的一端相连接，所述第二电容C2的一端与所述连接节点连接，所述第三电容C3的另一端与所述第一晶体管Q1的基极连接，所述第二电感L2的另一端接地。The radio frequency power amplifier according to claim 1, wherein the first stage matching network further comprises a second capacitor C2, a third capacitor C3 and a second inductor L2, one end of the second capacitor C2 is connected to the One end of the second inductor L2 is connected to one end of the third capacitor C3, one end of the second capacitor C2 is connected to the connection node, and the other end of the third capacitor C3 is connected to the first transistor Q1. The base is connected, and the other end of the second inductor L2 is grounded.
  3. 根据权利要求2所述的射频功率放大器，其特征在于，还包括第二电阻R2和负反馈网络，所述第二电阻R2串联在所述第三电容C3和所述第一晶体管Q1的基极之间，所述负反馈网络连接在所述第一晶体管Q1的集电极和基极之间，并与所述第二电阻R2并联。The radio frequency power amplifier according to claim 2, further comprising a second resistor R2 and a negative feedback network, the second resistor R2 is connected in series with the third capacitor C3 and the base of the first transistor Q1 Between, the negative feedback network is connected between the collector and the base of the first transistor Q1, and connected in parallel with the second resistor R2.
  4. 根据权利要求3所述的射频功率放大器，其特征在于，所述负反馈网络包括第三电阻R3和第四电容C4，其中所述第三电阻R3的一端与所述第一晶体管Q1的基极连接，所述第三电阻R3的另一端与所述第四电容C4的一端连接，所述第四电容C4的另一端与所述第一晶体管Q1的集电极连接。The radio frequency power amplifier according to claim 3, wherein the negative feedback network includes a third resistor R3 and a fourth capacitor C4, wherein one end of the third resistor R3 is connected to the base of the first transistor Q1 The other end of the third resistor R3 is connected to one end of the fourth capacitor C4, and the other end of the fourth capacitor C4 is connected to the collector of the first transistor Q1.
  5. 根据权利要求1所述的射频功率放大器，其特征在于，所述第二级匹配网络包括第五电容C5、第六电容C6、第三电感L3以及第四电感L4；The radio frequency power amplifier according to claim 1, wherein the second stage matching network comprises a fifth capacitor C5, a sixth capacitor C6, a third inductor L3, and a fourth inductor L4;
    所述第五电容C5和所述第六电容C6串联在所述第一晶体管Q1的集电极和所述第二晶体管Q2的基极之间，所述第三电感L3的一端连接所述第一晶体管Q1的集电极且另一端连接电压信号Vcc1，所述第四电感L4的一端连接在所述第五电容C5和所述第六电容C6之间且另一端接地；The fifth capacitor C5 and the sixth capacitor C6 are connected in series between the collector of the first transistor Q1 and the base of the second transistor Q2, and one end of the third inductor L3 is connected to the first The collector of the transistor Q1 and the other end are connected to the voltage signal Vcc1, one end of the fourth inductor L4 is connected between the fifth capacitor C5 and the sixth capacitor C6, and the other end is grounded;
    其中在所述第六电容C6和所述第二晶体管Q2的基极之间还串联有第四电阻R4。A fourth resistor R4 is connected in series between the sixth capacitor C6 and the base of the second transistor Q2.
  6. 根据权利要求1所述的射频功率放大器，其特征在于，所述第三级匹配网络包括第七电容C7、第八电容C8、第五电感L5以及第六电感L6；The radio frequency power amplifier according to claim 1, wherein the third-level matching network includes a seventh capacitor C7, an eighth capacitor C8, a fifth inductor L5, and a sixth inductor L6;
    所述第七电容C7和所述第八电容C8串联在所述第二晶体管Q2的集电极和所述第三晶体管Q3的基极之间，所述第五电感L5的一端连接所述第二晶体管Q2的集电极且另一端连接电压信号Vcc2，所述第六电感L6的一端连接在所述第七电容C7和所述第八电容C8之间且另一端接地；The seventh capacitor C7 and the eighth capacitor C8 are connected in series between the collector of the second transistor Q2 and the base of the third transistor Q3, and one end of the fifth inductor L5 is connected to the second The collector of the transistor Q2 and the other end are connected to the voltage signal Vcc2, one end of the sixth inductor L6 is connected between the seventh capacitor C7 and the eighth capacitor C8, and the other end is grounded;
    其中在所述第八电容C8和所述第三晶体管Q3的基极之间还串联有第五电阻R5。A fifth resistor R5 is connected in series between the eighth capacitor C8 and the base of the third transistor Q3.
  7. 根据权利要求1所述的射频功率放大器，其特征在于，所述输出匹配网络包括第九电容C9、第十电容C10、第七电感L7以及第八电感L8；The radio frequency power amplifier according to claim 1, wherein the output matching network comprises a ninth capacitor C9, a tenth capacitor C10, a seventh inductor L7, and an eighth inductor L8;
    所述第九电容C9和所述第十电容C10串联且串联的一端与所述第三晶体管Q3的集电极，串联的另一端用于输出信号RFout，所述第七电感L7的一端连接所述第三晶体管Q3的集电极且另一端连接电压信号Vcc3，所述第八电感L8的一端连接在所述第九电容C9和所述第十电容C10之间且另一端接地。The ninth capacitor C9 and the tenth capacitor C10 are connected in series, and one end of the series is connected to the collector of the third transistor Q3, and the other end of the series is used to output signal RFout, and one end of the seventh inductor L7 is connected to the The collector and the other end of the third transistor Q3 are connected to the voltage signal Vcc3, one end of the eighth inductor L8 is connected between the ninth capacitor C9 and the tenth capacitor C10, and the other end is grounded.
  8. 根据权利要求1所述的射频功率放大器，其特征在于，还包括分别为所述第一晶体管Q1的基极、所述第二晶体管Q2的基极以及所述第三晶体管Q3的基极提供偏置电压的第一偏置电路、第二偏置电路以及第三偏置电路；The radio frequency power amplifier according to claim 1, further comprising providing bias for the base of the first transistor Q1, the base of the second transistor Q2 and the base of the third transistor Q3 respectively. A first bias circuit, a second bias circuit, and a third bias circuit for setting a voltage;
    所述第一偏置电路、第二偏置电路以及第三偏置电路均为相同的偏置电路结构。The first bias circuit, the second bias circuit and the third bias circuit all have the same bias circuit structure.
  9. 根据权利要求8所述的射频功率放大器，其特征在于，所述偏置电路结构包括第四晶体管Q4至第八晶体管Q8、第六电阻R6至第15电阻R15，第十 一电容C11至第十三电容C13；The radio frequency power amplifier according to claim 8, wherein the bias circuit structure includes the fourth transistor Q4 to the eighth transistor Q8, the sixth resistor R6 to the fifteenth resistor R15, the eleventh capacitor C11 to the tenth Three capacitors C13;
    其中，所述第四晶体管Q4的集电极与所述第五晶体管Q5的基极、所述第六电阻的一端连接，所述第五晶体管Q5的集电极与所述第六晶体管Q6的基极、所述第八电阻R8的一端连接，所述第六晶体管Q6的集电极与所述第七晶体管Q7的基极、所述第十电阻R10的一端连接，所述第六电阻R6的另一端与所述第八电阻R8的另一端、第十电阻R10的另一端均连接至电压信号Vreg，所述第四晶体管Q4的发射极、第五晶体管Q4的发射极以及第六晶体管Q6的发射极分别通过所述第七电阻R7、第九电阻R9以及第十一电阻R11接地；所述第四晶体管Q4的基极与所述第十四电阻R14的一端连接，所述第十四电阻R14的另一端与所述第十二电阻R12的一端、所述第十三电容C13的一端、所述第七晶体管Q7的发射极并联，所述第七晶体管Q7的集电极连接电压信号Vbat，所述第十二电阻R12的另一端与所述第八晶体管Q8的集电极和基极连接，所述第八晶体管Q8的发射极通过所述第十三电阻R13接地，所述第十三电容C13的另一端接地，所述第十一电容C11的一端与所述第七晶体管Q7的基极并联且另一端接地，所述第十二电容C12的一端与所述第七晶体管Q7的发射极并联且另一端接地，所述第十五电阻R15的一端连接所述第七晶体管Q7的发射极且另一端用于输出偏置电压。Wherein, the collector of the fourth transistor Q4 is connected to the base of the fifth transistor Q5 and one end of the sixth resistor, and the collector of the fifth transistor Q5 is connected to the base of the sixth transistor Q6 , one end of the eighth resistor R8 is connected, the collector of the sixth transistor Q6 is connected to the base of the seventh transistor Q7, and one end of the tenth resistor R10 is connected, and the other end of the sixth resistor R6 The other end of the eighth resistor R8 and the other end of the tenth resistor R10 are both connected to the voltage signal Vreg, the emitter of the fourth transistor Q4, the emitter of the fifth transistor Q4 and the emitter of the sixth transistor Q6 The seventh resistor R7, the ninth resistor R9 and the eleventh resistor R11 are respectively grounded; the base of the fourth transistor Q4 is connected to one end of the fourteenth resistor R14, and the fourteenth resistor R14 The other end is connected in parallel with one end of the twelfth resistor R12, one end of the thirteenth capacitor C13, and the emitter of the seventh transistor Q7, the collector of the seventh transistor Q7 is connected to the voltage signal Vbat, and the The other end of the twelfth resistor R12 is connected to the collector and base of the eighth transistor Q8, the emitter of the eighth transistor Q8 is grounded through the thirteenth resistor R13, and the thirteenth capacitor C13 The other end is grounded, one end of the eleventh capacitor C11 is connected in parallel with the base of the seventh transistor Q7 and the other end is grounded, one end of the twelfth capacitor C12 is connected in parallel with the emitter of the seventh transistor Q7 and The other end is grounded, one end of the fifteenth resistor R15 is connected to the emitter of the seventh transistor Q7 and the other end is used for outputting a bias voltage.
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