CN114094950A - Radio frequency power amplifier - Google Patents
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- CN114094950A CN114094950A CN202111351557.6A CN202111351557A CN114094950A CN 114094950 A CN114094950 A CN 114094950A CN 202111351557 A CN202111351557 A CN 202111351557A CN 114094950 A CN114094950 A CN 114094950A
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- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
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- 238000004891 communication Methods 0.000 description 4
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45484—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention provides a radio frequency power amplifier, which comprises a bias circuit, wherein the base electrode of a third transistor is connected to the collector electrode of the third transistor, the collector electrode of the third transistor is connected to a reference voltage source, and the emitter electrode of the third transistor is connected to the collector electrode of a second transistor; the base electrode of the second transistor is connected to the collector electrode of the second transistor, and the emitter electrode of the second transistor is grounded; the base electrode of the fourth transistor is connected to the base electrode of the third transistor, the collector electrode of the fourth transistor is connected to a power supply voltage source, and the emitter electrode of the fourth transistor is connected to the base electrode of the first transistor after being connected with the thermal effect suppression resistor in series; the first end of the first capacitor is connected to the emitter of the fourth transistor, and the second end of the first capacitor is connected to the ground; the first end of the second capacitor is connected to the base of the fourth transistor, and the second end of the second capacitor is connected to the collector of the first transistor. Compared with the prior art, the bias circuit of the radio frequency power amplifier has good effect of inhibiting the thermal effect of the transistor, has better stability of providing the static current, and has high output power and good consistency.
Description
Technical Field
The present invention relates to the field of radio frequency identification technologies, and in particular, to a radio frequency power amplifier applied to a mobile communication device.
Background
Radio frequency identification technology (RFID) is the key technology of thing networking everything interconnection, and radio frequency front end module includes Low Noise Amplifier (LNA), Power Amplifier (PA), wave filter, switch, antenna etc. and power amplifier is the very important module of radio frequency front end, and its effect does: the output signal is amplified, and the amplified signal is transmitted by the antenna. The key module of the 5G wireless communication system is a Power Amplifier (RF) located at the last stage of the transmitter, and the PA of the 5G wireless communication system directly affects and determines various performance indexes of the transmitter system, such as output Power, efficiency, gain, linearity, working bandwidth, reflection coefficient, and the like, thereby affecting and determining various performance indexes of the whole 5G wireless communication system. The 5G frequency band is divided into two large ranges, namely 450 MHz-6 GHz (Sub 6G for short) and 24.25 GHz-52.6 GHz (millimeter wave frequency band). The higher the frequency is, the shorter the signal propagation distance is, so that the coverage radius of the base station is smaller, and the problems of the number of the base stations, the energy dissipation caused by the propagation of high-frequency signals and the like are solved, and the millimeter wave frequency band is not easy to realize the wide application of a 5G communication system temporarily; the N41, N77, N78, and N79 bands are relatively low in millimeter wave frequency and wide in bandwidth, so that it is particularly important to provide a radio frequency power amplifier operating in the Sub6G band N77 band.
The prior art radio frequency power amplifier includes a bias circuit, an input-output matching network, a transistor, and the like. When the GaAs HBT technology is used for designing the radio frequency power amplifier, the requirement on a bias circuit is higher. As shown in fig. 1, it is the prior art of rf powerSchematic diagram of a rate amplifier circuit, bias circuit module thereof, RFinFor signal input port, RFoutIs a signal output port, Vbat、VccFor the power supply, I1Is a bias current of a bias circuit, Q0Are transistors. The bias circuit is an important component of the radio frequency power amplifier and provides a direct current bias point for the amplifier, the bias point directly influences the power gain, the efficiency and the linearity of the output power of the radio frequency power amplifier, and the stability of the bias circuit directly determines the stability of the functional module. That is, the bias circuit functions to provide a stable and suitable quiescent operating point for the rf power amplifier under a given condition and ensure stability of its operating state while suppressing the influence of the transistor parameters with temperature variation. In the radio frequency power amplifier supporting 5G mobile communication, a 5G network needs the power amplifier to provide larger power, and the thermal effect of a transistor will be increased greatly. The N77 frequency band in 5G mobile communication is 3.3GHz-4.2GHz, and because the frequency is higher, the requirement on the output power of a radio frequency power amplifier is higher, under the condition of outputting higher power, the self-heating effect of a transistor is more remarkable, and the biasing circuit in the prior art is not applicable to the radio frequency power amplifier any more.
Therefore, there is a need to provide a new rf power amplifier to solve the above problems.
Disclosure of Invention
In view of the above deficiencies of the prior art, the present invention provides a radio frequency power amplifier for 5G mobile communication, which has a good effect of suppressing the thermal effect of the transistor, provides a more stable quiescent current, and has high output power and good consistency.
In order to solve the above technical problem, the present invention provides a radio frequency power amplifier, which includes an input terminal, an output terminal, a first transistor and a bias circuit; the base electrode of the first transistor is connected to the input end, the emitter electrode of the first transistor is grounded, the collector electrode of the first transistor is connected to the output end, and the bias circuit is lapped between the base electrode of the first transistor and the input end;
the bias circuit includes: the second transistor, the third transistor, the fourth transistor, the first capacitor, the second capacitor and the heat effect suppression resistor;
a base electrode of the third transistor is connected to a collector electrode of the third transistor, a collector electrode of the third transistor is connected to a reference voltage source, and an emitter electrode of the third transistor is connected to a collector electrode of the second transistor;
the base of the second transistor is connected to the collector of the second transistor, and the emitter of the second transistor is grounded;
the base electrode of the fourth transistor is connected to the base electrode of the third transistor, the collector electrode of the fourth transistor is connected to a power supply voltage source, and the emitter electrode of the fourth transistor is connected to the base electrode of the first transistor after being connected with the thermal effect suppression resistor in series;
a first end of the first capacitor is connected to an emitter of the fourth transistor, and a second end of the first capacitor is connected to the ground;
the first end of the second capacitor is connected to the base of the fourth transistor, and the second end of the second capacitor is connected to the collector of the first transistor.
Preferably, the bias circuit further includes a first resistor and a second resistor, a collector of the third transistor is connected in series with the second resistor and then connected to the reference voltage source, and an emitter of the second transistor is connected in series with the first resistor and then connected to ground.
Preferably, the bias circuit further comprises a third resistor, and the third resistor is connected in series between the base of the fourth transistor and the first end of the second capacitor.
Preferably, the radio frequency power amplifier further comprises an input matching network connected in series between the input terminal and the base of the first transistor.
Preferably, the input matching network is formed by a capacitor.
Preferably, the radio frequency power amplifier further comprises an output matching network, and the output matching network is connected between the collector of the first transistor and the output terminal.
Preferably, the output matching network is composed of an inductor and a third capacitor; one end of the inductor is connected to the collector of the first transistor, and the other end of the inductor is connected to a circuit voltage source; the third capacitor is connected in series between the collector of the first transistor and the output terminal.
Compared with the prior art, the radio frequency power amplifier of the invention designs the bias circuit, has simple structure and supports the working frequency band (namely high-frequency signals) of the 5G network, in the 5G working frequency band, the bias circuit filters a part of high-frequency signals with lower frequency in the working frequency band to the ground through the first capacitor due to the existence of the designed first capacitor and the second capacitor so as to filter the high-frequency signals with lower frequency in the working frequency band, and the high-frequency signals with higher frequency in the other part of working frequency band sequentially pass through the emitter of the fourth transistor, the base of the fourth transistor and the collector of the first transistor so as to form a feedback structure which can supplement the high-frequency signals with higher frequency in the leaked working frequency band to the output signals, thereby effectively improving the high-frequency output power of the radio frequency power amplifier in the working frequency band, and the base electrode potential of the fourth transistor is kept unchanged, so that the linearity of the radio frequency power amplifier is effectively improved. The bias resistor can effectively inhibit the self-heating effect of the transistor, effectively improve the stability of the bias circuit, namely provide stable static current, thereby keeping the transistor always working at a stable static working point, and ensuring the stability of the gain, the output power and the output power linearity of the power amplifier.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings:
fig. 1 is a circuit schematic of a prior art rf power amplifier;
fig. 2 is a circuit diagram of a prior art rf power amplifier;
FIG. 3 is a schematic diagram of the bias point shift of FIG. 2;
FIG. 4 is a circuit diagram of an RF power amplifier according to an embodiment of the present invention;
FIG. 5 is a circuit diagram of a second RF power amplifier according to the second embodiment of the present invention;
fig. 6 is a graph illustrating the simulation effect of the output power and the power added efficiency obtained by the bias circuit of the rf power amplifier in fig. 2;
fig. 7 is a diagram illustrating simulation effects of output power and power added efficiency obtained by the bias circuit of the rf power amplifier according to the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. Directional phrases used herein, such as, for example, upper, lower, front, rear, left, right, inner, outer, lateral, and the like, refer only to the orientation of the appended drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Please refer to fig. 2-3, wherein fig. 2 is a circuit diagram of a prior art rf power amplifier and a schematic diagram of a bias point shift thereof; fig. 3 is a schematic diagram of the movement of the bias point of fig. 2. In fig. 2, in a bias circuit module of a related art radio frequency power amplifier, RFinFor signal input port, RFoutIs a signal output port, Q0R1 and R2 are voltage dividing resistors. I.e. nowA bias circuit of a radio frequency power amplifier of the technology is composed of two divider resistors which are connected in series. As shown in FIGS. 2-3, when a large signal is inputted, Q is determined by the clamping characteristics of the diode0The forward voltage and reverse current on the base-emitter diode are limited. Average direct current I rectified by a base-emitter dioderecWill increase with increasing input power due to self-heating effect of the transistor, the voltage V across the base-emitter junctionbeReduce delta VbeThe bias point is shifted from S to L1This will result in a reduction of transconductance, gain and distortion of phase. To compensate for gain compression and phase distortion under large signal conditions, the large signal transconductance and the small signal transconductance must be kept the same. Therefore, the bias point L should be set1Move to L2To (3). In the design of Power Amplifiers (PA) with frequency bands of N77(3.3GHz-4.2GHz) and N79(4.5GHz-5GHz), the problem that the high-frequency output power is lower than the low-frequency output power exists inevitably. The present invention therefore overcomes the above-mentioned problems by improving the bias circuit.
Fig. 4 is a circuit diagram of an rf power amplifier according to an embodiment of the invention. An embodiment of the invention provides a radio frequency power amplifier 100, which includes an input terminal RFinAn output terminal RFoutA first transistor Q0And a bias circuit 10.
The first transistor Q0Is connected to the input terminal RFinThe first transistor Q0The emitter of the first transistor Q is grounded, the first transistor Q0Is connected to the output terminal RFoutThe bias circuit 10 is connected to the first transistor Q in a lap joint mode0And said input terminal RFinIn the meantime.
Specifically, in the present embodiment, the bias circuit 10 includes: second transistor Q1A third transistor Q2A fourth transistor Q3A first capacitor CL1A second capacitor CL2Thermal effect suppression resistor Rbias. Wherein the first capacitor CL1And a second capacitor CL2Are all filter capacitors.
The third transistor Q2Is connected to the third transistor Q2The third transistor Q2Is connected to a reference voltage source VregThe third transistor Q2Is connected to the second transistor Q1The collector electrode of (1).
The second transistor Q1Is connected to the second transistor Q1The second transistor Q1The emitter of (2) is grounded.
The fourth transistor Q3Is connected to the third transistor Q2Said fourth transistor Q3Is connected to a supply voltage source VbatSaid fourth transistor Q3By connecting in series said thermal effect suppressing resistor RbiasIs connected to the first transistor Q0The base of (1).
The first capacitor CL1Is connected to the fourth transistor Q3Said first capacitor CL1The second terminal of which is connected to ground.
The second capacitor CL2Is connected to the fourth transistor Q3The base of, the second capacitor CL2Is connected to the first transistor Q0The collector electrode of (1).
In this embodiment, preferably, the bias circuit 10 further includes a first resistor R for improving reliability1And a second resistor R2The third transistor Q2Is connected in series with the second resistor R2Is connected to the reference voltage source VregThe second transistor Q1Is connected in series with the first resistor R1And then grounded.
To better match the impedance of the circuit, the RF power amplifier 100 further comprises an RF amplifier connected in series to the input terminalinAnd the first transistor Q0Is provided in the input matching network between the bases of (1). In this embodiment, specifically, the input matching network is formed by a capacitor C.
In a similar way, the radio frequencyThe power amplifier 100 further comprises an output matching network connected to the first transistor Q0And said output terminal RFoutIn the meantime. In this embodiment, specifically, the output matching network includes an inductor L and a third capacitor C3Forming; one end of the inductor L is connected to the first transistor Q0The other end of the inductor L is connected to a circuit voltage source Vcc(ii) a The third capacitor C3Is connected in series to the first transistor Q0And the collector of (2) and the output terminal RFoutIn the meantime.
Continuing with FIG. 4, a second transistor Q1And a third transistor Q2The clamping voltage is formed so that the current I2For stabilizing the current, the first resistor R is adjusted1And a second resistor R2Current I with adjustable magnitude2The size of (2). Third transistor Q2And a fourth transistor Q3Form a current mirror due to the third transistor Q3The amplifying function of, the third transistor Q3Is mirror amplified by the current I2To stabilize the current, so the current I1＝βI2Wherein β is the amplification factor. When the input power is increased and the radio frequency power amplifier 100 is in a high-power working state, the first transistor Q0The first transistor Q increases due to transistor self-heating effect and diode rectification characteristics0Base level potential V ofb0Will drop and the signal on the rf line leaks into the bias circuit 10. Due to the first capacitance CL1And a second capacitor CL2In the presence of a first capacitor C through which a part of the high-frequency signal passesL1To ground, another part of the high frequency signal passes through the fourth transistor Q in turn3Emitter stage, fourth transistor Q3Base stage of, second capacitor CL2To the first transistor Q0The feedback structure may supplement a leaked signal to an output signal, and thus the first transistor Q may be implemented0The high frequency output power of the rf power amplifier 100 is improved and the linearity of the rf power amplifier 100 is effectively maintained. Fourth transistor Q3Due to rectification, the base and emitter stagesVoltage between stages Vbe3Is reduced because of the four transistor Q3So that the first transistor Q is controlled0Base voltage V ofb0The reduction is effectively compensated for so that the first transistor Q0Under the high input and output power state, the static operating point is kept unchanged, so that the gain compression is effectively suppressed. At the same time, bias resistor RbiasThe first transistor Q can be effectively suppressed0Thereby effectively improving the stability of the bias circuit 10, i.e. providing a stable quiescent current, and thus maintaining the first transistor Q0The power amplifier is always operated at a stable static operating point, so that the stability of the gain, the output power and the linearity of the output power of the power amplifier is ensured.
The bias circuit 10 of the above structure of the present invention forms an active bias circuit with temperature compensation. The output power in the working frequency band is basically kept consistent, and the method has a better improvement effect on the technical problem provided by the invention.
In addition, the bias resistance R is increased within a certain rangebiasThe stability of the quiescent point of the rf power amplifier 100 can be effectively improved, but beyond this range, if the bias resistance R is continuously increasedbiasNon-linearity at the large signal input of the rf power amplifier 100 is increased. Increasing the bias resistance RbiasThe magnitude of (1) is shown as rising first and then falling for the linearity improvement of the output power, and when the bias circuit 10 is designed, the bias resistor R is selectedbiasIs sized to combine the operating requirements of the rf power amplifier 100, the bias resistor RbiasIs generally a compromise chosen between natural effects and linearity.
Referring to fig. 6-7, fig. 6 is a graph illustrating the simulation effect of the output power and the power added efficiency obtained by the bias circuit of the rf power amplifier of fig. 2; fig. 7 is a diagram illustrating simulation effects of output power and power added efficiency obtained by the bias circuit of the rf power amplifier according to the present invention. As can be seen from fig. 6, the 1dB power compression point of the circuit of the prior art radio frequency power amplifier is 36.5 dBm. As can be seen in fig. 7, the 1dB power compression point of the circuit of the rf power amplifier of the present invention is 38 dBm. Compared with simulation results, the bias circuit provided by the invention has the advantage that the high-frequency output power of the radio-frequency power amplifier is obviously improved.
In the invention, the traditional biasing circuit in the prior art is improved, and the structure is simple and easy to realize; the bias circuit of the invention has good improvement on the thermal effect of the transistor in the radio frequency power amplifier, can provide stable current, and simultaneously can compensate the high frequency output power of the radio frequency power amplifier, thereby achieving the purpose of consistent low frequency, medium frequency and high frequency output power.
Fig. 5 is a circuit diagram of a second rf power amplifier according to an embodiment of the invention, and fig. 5 is a schematic diagram of the second rf power amplifier according to the invention. This embodiment is substantially the same as the embodiment shown in fig. 4, except that the bias circuit 100 further includes a third resistor R3Said third resistance R3Is connected in series to the fourth transistor Q3Base and said second capacitor CL2Between the first ends of the first and second ends.
Third resistor R3The feedback depth can be adjusted, and the third resistor R can be adjusted3And a first capacitor CL1The value of (b) is adjustable, the stability (stability factor K value) of the circuit is increased, and the base potential Vb3 of the fourth transistor Q3 is kept unchanged, so that the linearity of the radio frequency power amplifier 100 is further effectively improved.
Apart from the above differences, the same technical problems are solved and the same technical effects are achieved as in the embodiment shown in fig. 4.
Compared with the prior art, the radio frequency power amplifier of the invention designs the bias circuit, has simple structure, supports the working frequency band (namely high-frequency signals) of the 5G network, in the 5G working frequency band, the bias circuit filters a part of high-frequency signals with lower frequency in the working frequency band to the ground through the first capacitor due to the existence of the first capacitor and the second capacitor so as to filter the high-frequency signals with lower frequency in the working frequency band, while the high-frequency signal with higher frequency in the other part of the working frequency band sequentially passes through the emitter of the fourth transistor, the base of the fourth transistor and the second capacitor to the collector of the first transistor to form a feedback structure, the feedback structure can supplement a high-frequency signal with higher frequency in a leaked working frequency band into an output signal, so that the high-frequency output power of the radio frequency power amplifier in the working frequency band is effectively improved; and the base electrode potential of the fourth transistor is kept unchanged, so that the linearity of the radio frequency power amplifier is effectively improved. The bias resistor can effectively inhibit the self-heating effect of the transistor, effectively improve the stability of the bias circuit, namely provide stable static current, thereby keeping the transistor always working at a stable static working point, and ensuring the stability of the gain, the output power and the output power linearity of the power amplifier.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (7)
1. A radio frequency power amplifier comprises an input end, an output end, a first transistor and a bias circuit; a base of the first transistor is connected to the input terminal, an emitter of the first transistor is grounded, a collector of the first transistor is connected to the output terminal, and the bias circuit is bridged between the base of the first transistor and the input terminal, wherein the bias circuit comprises:
the second transistor, the third transistor, the fourth transistor, the first capacitor, the second capacitor and the heat effect suppression resistor;
a base electrode of the third transistor is connected to a collector electrode of the third transistor, a collector electrode of the third transistor is connected to a reference voltage source, and an emitter electrode of the third transistor is connected to a collector electrode of the second transistor;
the base of the second transistor is connected to the collector of the second transistor, and the emitter of the second transistor is grounded;
the base electrode of the fourth transistor is connected to the base electrode of the third transistor, the collector electrode of the fourth transistor is connected to a power supply voltage source, and the emitter electrode of the fourth transistor is connected to the base electrode of the first transistor after being connected with the thermal effect suppression resistor in series;
a first end of the first capacitor is connected to an emitter of the fourth transistor, and a second end of the first capacitor is connected to the ground;
the first end of the second capacitor is connected to the base of the fourth transistor, and the second end of the second capacitor is connected to the collector of the first transistor.
2. The RF power amplifier of claim 1, wherein the bias circuit further comprises a first resistor and a second resistor, wherein a collector of the third transistor is connected to the reference voltage source in series with the second resistor, and an emitter of the second transistor is connected to ground in series with the first resistor.
3. The rf power amplifier of claim 1, wherein the bias circuit further comprises a third resistor connected in series between the base of the fourth transistor and the first terminal of the second capacitor.
4. The radio frequency power amplifier of claim 1, further comprising an input matching network connected in series between the input and the base of the first transistor.
5. The RF power amplifier of claim 4, wherein the input matching network is formed by a capacitor.
6. The radio frequency power amplifier of claim 1, further comprising an output matching network connected between the collector of the first transistor and the output terminal.
7. The radio frequency power amplifier of claim 6, wherein the output matching network is comprised of an inductor and a third capacitor; one end of the inductor is connected to the collector of the first transistor, and the other end of the inductor is connected to a circuit voltage source; the third capacitor is connected in series between the collector of the first transistor and the output terminal.
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| PCT/CN2022/125267 WO2023082933A1 (en) | 2021-09-26 | 2022-10-14 | Radio frequency power amplifier |
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| CN202111134561 | 2021-09-26 | ||
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023082933A1 (en) * | 2021-09-26 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier |
| CN116260400A (en) * | 2022-12-31 | 2023-06-13 | 广州慧智微电子股份有限公司 | Bias circuit, power amplifier and electronic device |
| CN117277977A (en) * | 2023-11-22 | 2023-12-22 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip module |
| CN117439549A (en) * | 2023-12-13 | 2024-01-23 | 深圳飞骧科技股份有限公司 | Gain-adjustable linear low noise amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117353673B (en) * | 2023-12-04 | 2024-03-15 | 上海安其威微电子科技有限公司 | Radio frequency amplifying circuit, control method, control module and electronic equipment |
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| CN101924522A (en) * | 2010-09-07 | 2010-12-22 | 沈阳中科微电子有限公司 | Radio-frequency power amplifier with adaptive linear biasing circuit |
| CN106230391A (en) * | 2016-07-13 | 2016-12-14 | 锐迪科微电子（上海）有限公司 | A kind of linearisation current biasing circuit of power amplifier |
| US10389307B2 (en) * | 2016-11-25 | 2019-08-20 | Murata Manufacturing Co., Ltd. | Power amplifier circuit |
| CN110120788B (en) * | 2019-06-06 | 2024-02-20 | 广东工业大学 | Bias circuit for power amplifier and power amplifier |
| CN110311632B (en) * | 2019-06-13 | 2024-05-14 | 广东工业大学 | Self-adaptive bias circuit with high-temperature drift inhibition capability |
| CN114094950A (en) * | 2021-09-26 | 2022-02-25 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier |
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2021
- 2021-11-15 CN CN202111351557.6A patent/CN114094950A/en active Pending
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2022
- 2022-10-14 WO PCT/CN2022/125267 patent/WO2023082933A1/en unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023082933A1 (en) * | 2021-09-26 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier |
| CN116260400A (en) * | 2022-12-31 | 2023-06-13 | 广州慧智微电子股份有限公司 | Bias circuit, power amplifier and electronic device |
| CN117277977A (en) * | 2023-11-22 | 2023-12-22 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip module |
| CN117277977B (en) * | 2023-11-22 | 2024-03-12 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip module |
| CN117439549A (en) * | 2023-12-13 | 2024-01-23 | 深圳飞骧科技股份有限公司 | Gain-adjustable linear low noise amplifier |
| CN117439549B (en) * | 2023-12-13 | 2024-03-15 | 深圳飞骧科技股份有限公司 | Gain-adjustable linear low noise amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023082933A1 (en) | 2023-05-19 |
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