CN203368404U - High-gain low noise amplifier - Google Patents
High-gain low noise amplifier Download PDFInfo
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- CN203368404U CN203368404U CN 201320147072 CN201320147072U CN203368404U CN 203368404 U CN203368404 U CN 203368404U CN 201320147072 CN201320147072 CN 201320147072 CN 201320147072 U CN201320147072 U CN 201320147072U CN 203368404 U CN203368404 U CN 203368404U
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Abstract
The utility model relates to a high-gain low noise amplifier, which comprises a differential voltage preamplifier, a band-pass filter, a middle amplification circuit, a load step and a feedback step which are cascade coupled in sequence, wherein a differential capacitive feedback network structure is used in the differential voltage preamplifier, so a common mode rejection ratio of a circuit is increased and capacitance is decreased at the same time; frequency in the filter can be easily adjusted by positioning an adjustable capacitor in a band-pass filtration circuit; a common-source PMOS pipe and a NMOS pipe with reused current are used at an amplification step; only resistance is used at the load step as a load, so the area of occupied chip is decreased; and a parallel-type structure in capacitance and inductance is used in a negative feedback, thus noise deterioration generated from parasitic resistance of on-chip elements on a traditional source-step inductance negative feedback amplifier especially source-step feedback inductance and grid-step matching inductance is overcome.
Description
Technical field
The present invention is field of radio frequency integrated circuits, and the particularly design of the low noise amplifier of integrated a kind of high-gain, good output matching, particularly for the design of the low noise amplifier of radio receiver radio frequency front end chip.
Background technology
Now, along with the fast development that comprises all kinds of wireless communication technologys such as WLAN (wireless local area network) and mobile communication, radio frequency integrated circuit has had the market of a rapid growth, and the industry relevant to communication receives much concern, and becomes the focus of research and development.The low noise amplifier of wireless communication receiver front end is one of crucial module, and its effect is that the small-signal that antenna reception is arrived is amplified the also noise of suppression receiver late-class circuit.This just requires amplifier that sufficiently high gain must be provided, and guarantees that the rear class noise can not cause on the performance of system excessive impact simultaneously.
Feedback fraction in the difference preamplifier of traditional low noise amplifier front end adopts the feedback method of T-shaped network mostly, and capacitance is larger, suppresses the common mode ability relatively poor.
In the tradition sheet, the realization of CMOS low noise amplifier adopts following several matching ways usually:
1) resistance negative feedback LNA in parallel: this structure realizes matching feature by resistive degeneration, expands the gain bandwidth of amplifier; This structure can meet Input matching and relative good noiseproof feature, can realize higher gain.Due in order to compensate the impact of output node parasitic capacitance on high-frequency gain, the high-frequency gain that the load meeting improves circuit with the inductance resonant network usually responds, and load inductance is usually larger, has taken the larger area of chip.In addition, the gain of this structure is directly proportional with the transistorized mutual conductance of input common-source stage, so the requirement of high-gain can cause higher power consumption.
2) common gate input structure LNA: this structure matching Performance Ratio is better, and only needs very little electric current just can meet the needs of input mutual conductance, can realize lower power consumption design.But the noiseproof feature of this structure is poor, the LNA of single-stage can only provide limited gain, noiseproof feature that can further deterioration system, if adopt two-layer configuration area can be larger, therefore application is also limited.
To sum up analyze, for the design of CMOS low noise amplifier, realize that the optimization of the performances such as gain, Input matching, noise, area improves, have very important significance.
Summary of the invention
The present invention seeks to overcome the deficiencies in the prior art, a kind of high-gain low-noise amplifier circuit is provided, this circuit has higher gain, the performance index such as input-output adapt ation, and the chip area that reduces to take, the noise that significantly improves system is energy.
In order to achieve the above object, technical scheme of the present invention is as follows:
A kind of high-gain low-noise amplifier, be comprised of difference preamplifier, band pass filter, intergrade amplifier, load stage and five parts of feedback stage, wherein:
Difference preamplifier: input signal is amplified to nominal level.
Band pass filter: the signal to input carries out filtering.
Amplifier, be connected between described band pass filter and output, completes the mutual conductance of filtered signal is amplified; Load stage, be connected between power supply and described output, in order to export amplifying signal, current signal converted to voltage signal again;
Feedback stage, be connected between described output and input matching circuit, obtains certain input impedance together with amplifier; Guarantee the stable of gain simultaneously together with amplifier, load.
A difference preamplifier, it is by input 1, input 2 and output, and input 1 is connected respectively RF-INP and RF-INN radiofrequency signal two-way input with input 2.Output end vo ut is connected with band pass filter input Vin, and inverse output terminal is by resistance R 3 ground connection.
A band pass filter, it mainly is comprised of operational amplifier N21 and N22, the negative input end of operational amplifier N21 is connected with input Vin by resistance R 5, the capacitor C 9 of series connection, the negative input end of operational amplifier N21 is connected with series resistance R6, capacitor C 8, capacitor C 8 ground connection, the negative input end of operational amplifier N21 is connected with output; The negative input end of operational amplifier N22 is connected with the output of operational amplifier N21, the positive input terminal of operational amplifier N21 is connected with the positive input terminal of operational amplifier N22, the positive input terminal of operational amplifier N21 is connected with ground by series connection tunable capacitor C10, resistance R 7, and the negative input end of operational amplifier N22 is connected with output end vo by resistance R 8.
An input matching circuit, it is comprised of two-way LC parallel circuits, and it has input 1 and input 2, output 1 and output 2, input 1 connects the input 1 of main amplifier circuit, and input 2 is by capacitor C 12 ground connection.
A main amplifier circuit is for being total to the grid single-input double-output differential amplifier of drain structure altogether, and it has input 1 and output 1 and output 2, the output end vo of its input 1 connecting band bandpass filter; Its output 1 is connected respectively load and feedback stage with output 2.
Described preamplifier mainly adopts the topological structure of the single output of dual input difference, ac capacitor coupling and differential capacitance feedback, comprises amplifier N1, the first feedback network and the second feedback network.The first feedback network comprises the first transistor M1, transistor seconds M2, the 3rd capacitor C 3 and the 4th capacitor C 4; One end of described capacitor C 3 is connected with the positive input of differential transconductance operational amplifier, and the other end of capacitor C 3 is connected with an end of capacitor C 4, and the other end of capacitor C 4 is connected with the inverse output terminal of differential transconductance operational amplifier; The first transistor M1 is connected with the drain electrode of transistor seconds M2; The source electrode of the first transistor M1 and transistor seconds M2 is connected to substrate separately; The source electrode of the first transistor M1 is connected with the positive input of differential transconductance operational amplifier, and the source electrode of transistor seconds M2 also is connected with the inverse output terminal of fully differential operational transconductance amplifier; Described the second feedback network comprises the 3rd transistor M3, the 4th transistor M4, the 5th capacitor C 5 and the 6th capacitor C 6; One end of described capacitor C 5 is connected with the reverse input end of differential transconductance operational amplifier, and the other end of capacitor C 5 is connected with an end of the 6th capacitor C 6, and the other end of capacitor C 6 is connected with the forward output of differential transconductance operational amplifier; The 3rd transistor M3 is connected with the drain electrode of the 4th transistor M4; The source electrode of the 3rd transistor M3 and the 4th transistor M4 is connected to substrate separately; The source electrode of the 3rd transistor M3 is connected with the reverse input end of differential transconductance operational amplifier, and the source electrode of the 4th transistor M4 also is connected with the forward output of differential transconductance operational amplifier; M1, M2, M3, the grid of M4 all links together, and with external power source, VCC is connected.Capacitor C 7, resistance R 4 that between the tie point of the tie point of C3 and C4 and C5 and C6, cross-over connection is connected.
The difference preamplifier adopts the form of AC coupled difference, M1, M2, M3, M4 is biased in sub-threshold region and forms pseudo-resistance, on the one hand to operational transconductance amplifier, provide direct current biasing, on the other hand with feedback loop on the feedback capacity network form a high pass low frequency cut-off points, effectively suppress the low-frequency noise in circuit.Capacitor C 7 in the difference preamplifier can be regarded disconnection as for common mode input signal, and can be equivalent to the 7th electric capacity of two two times of values to differential input signal, between interface point and common mode reference level that one is connected across the 3rd electric capacity and the 4th electric capacity, another is connected across between the 5th electric capacity and the 6th electric capacity interface point and common mode reference level, form T-shaped the first feedback network and second feedback network of two symmetries, when this structure improves the common-mode rejection ratio of preamplifier, more former T-shaped capacitive feedback network has further reduced the capability value of electric capacity.
Described double operational N21 and N22, as the core component of band pass filter, are equipped with resistance and electric capacity simultaneously and realize peripheral supplementing, and make gain and input impedance all higher, and output impedance is lower, like this, filter is being realized on the basis of stationary filtering, also has concurrently and amplifies and cushioning effect.By capacitor C 10 is set, make the frequency of filter be easy to realize regulating, can also avoid filter simultaneously because the normal operation of the cause influence of parameter.
Described intergrade amplifier is total to the single-input double-output differential amplifier of drain structure for being total to grid,, it has input, output 1 and output 2, the output end vo of its input 1 connecting band bandpass filter; Its output 1 and output 2 are connected respectively output end vo ut1 and the Vout2 of high-gain low-noise amplifier.Leak altogether with common grid the PMOS pipe M5 and the NMOS that are connected and manage M6 to pipe, it is the source class amplifier, its grid is connected with input matching circuit, and the source class of wherein said M5 is connected with current source I2, is connected to the first current source I1 together with the source class of the source class of M6 and another symmetrical branch road NMOS pipe M8.Further, the source electrode of PMOS pipe M9 is connected the drain electrode of pipe with described PMOS pipe M5, as the common gate current follower, on the one hand, PMOS pipe M9 can Isolation input and output stage, makes circuit that good isolation be arranged, simultaneously, it can reduce input impact on circuit on pipe Miller equivalent capacity, and its grid is connected with power supply, and its drain electrode is connected with described output VOUT1.Load stage has only been used resistance R L, has reduced the area of shared chip.Capacitor C 13 and C14 are ac-coupled to the grid of managing metal-oxide-semiconductor M9 and M10 by metal-oxide-semiconductor M6 and M8 amplifying signal respectively, provide additional gain by latter two pipe, capacitor C 13 and C14 have reduced the impact of power-current conversion efficiency and noise factor and Miller effect simultaneously.Metal-oxide-semiconductor M9 and M10 are common grid connected modes, and it can improve the output impedance of amplifier, and the load of amplifier is mainly determined by laod network; M9 and M10 provide a low ohmic load to M6 and M8 simultaneously, have reduced the impact of Miller effect on amplifier performance.
Described feedback circuit mainly is comprised of two-way lc circuit in parallel, two-way LC parallel circuits is attempted by between load resistance RL and input matching circuit, the noise main source of low noise amplifier does not lie in amplifier tube itself, but various ghost effects, especially source class feedback inductance and grid series connection coupling inductance itself with the series connection dead resistance.Can remove the source class of traditional source class inductor degeneration low noise amplifier and the inductance of grid by parallel feedback, make circuit performance insensitive to the Q value of inductance.
The outstanding improvement major embodiment that the present utility model is made is in the following areas:
1) this difference preamplifier adopts " ac capacitor coupling-differential capacitance feedback " formula differential input and output structure, effectively removed noise, in the differential signal input process, the 7th capacitor C 7 can be equivalent to the C7 of two twices, one is connected across between the 3rd capacitor C 3 and the 4th capacitor C 4 interface points and common-mode reference level, another is connected across between the 5th capacitor C 5 and the 6th capacitor C 6 interface points and common-mode reference level, the T-shaped capacitive feedback network that forms two symmetries, i.e. the first feedback network in literary composition and the second feedback network.In input process for common-mode signal, the 7th capacitor C 7 two ends can be regarded disconnection as.The first feedback network and the second feedback network can reduce the electric capacity gross area of difference preamplifier, and common-mode rejection ratio is also improved.
2) band pass filter, by capacitor C 10 is set, makes the frequency of filter be easy to realize regulating, and can also avoid filter simultaneously because the normal operation of the cause influence of parameter.
3) the intergrade amplifier has adopted the current multiplexing technology, as shown in Figure 4, at the source electrode of M5, injects certain direct current I2, can reduce the direct current pressure drop on load resistance and not affect the small signal gain of circuit.The M5 pipe has formed the common-source stage amplification with the M6 pipe, and certain mutual conductance is provided, in the situation that do not increase electric current, has improved the gain of circuit.The M6 pipe has been shunted the direct current of load resistance simultaneously, has improved the direct voltage remaining of output.
4) capacitance of drain of metal-oxide-semiconductor M6 and M8 exchanges ground connection by C13 with C14 respectively, has effectively reduced the impact of Miller effect, has reduced the noise factor of circuit.
5) capacitor C 13 and C14 are ac-coupled to the grid of managing metal-oxide-semiconductor M9 and M10 by metal-oxide-semiconductor M6 and M8 amplifying signal respectively, by latter two pipe, provide additional gain, have increased the gain of whole amplifier.
6) negative feedback adopts parallel structure to overcome the noise penalty that particularly dead resistance of source feedback inductance and grid coupling inductance is brought of element on the sheet of traditional source inductance negative feedback amplifier.
The accompanying drawing explanation
The electrical block diagram that Fig. 1 is preamplifier of the present invention.
The electrical block diagram that Fig. 2 is band pass filter of the present invention.
The electrical block diagram that Fig. 3 is intergrade amplifier of the present invention.
Fig. 4 is PMOS.NMOS current multiplexing schematic diagram of the present invention.
The small-signal simplified model schematic diagram that Fig. 5 is the intergrade amplifier.
Embodiment
A kind of high-gain low-noise amplifier that the present invention proposes is described in detail as follows in conjunction with topological structure schematic diagram and example structure schematic diagram:
A kind of high-gain low-noise amplifier low noise amplifier that the present invention proposes, comprise difference preamplifier (1), bandwidth-limited circuit (2), intergrade amplifier (3), load stage (4), feedback stage (5).
Fig. 1 is difference preamplifier (1) electrical block diagram.Described difference preamplifier (1) adopts the topological structure of the single output of dual input difference, comprises the first differential operational amplifier N1, forward coupling capacitance C1, reverse coupled capacitor C 2, the first feedback network (6) and the second feedback network (7) and capacitor C 7; The positive input of described the first differential operational amplifier is connected with resistance R 1 and forward coupling capacitance series connection C1's, and the reverse input end of the first differential operational amplifier is connected with resistance R 2 and 2 series connection of reverse coupled capacitor C; The input of described the first feedback network is connected with the positive input of the first differential operational amplifier, and the output of the first feedback network is connected with the inverse output terminal of the first differential operational amplifier; The input of described the second feedback network is connected with the reverse input end of the first differential transconductance operational amplifier, and the output of the second feedback network is connected with the forward output of the first differential operational amplifier; Be provided with capacitor C 7, the resistance R 4 of connecting between the first feedback network and the second feedback network.
Band pass filter (2) is mainly by operational amplifier N21(8) and N22(9) form, operational amplifier N21(8) negative input end is connected with input Vin by resistance R 5, the capacitor C 9 of series connection, operational amplifier N21(8) negative input end is connected with series resistance R6, capacitor C 8, capacitor C 8 ground connection, operational amplifier N21(8) negative input end is connected with output; Operational amplifier N22(9) negative input end and operational amplifier N21(8) output be connected, operational amplifier N21(8) positive input terminal and operational amplifier N22(9) positive input terminal be connected, operational amplifier N21(8) positive input terminal is connected with ground by series connection tunable capacitor C10, resistance R 7, operational amplifier N22(9) negative input end pass through resistance R 8 and be connected with output end vo.
Main amplifier (3) main circuit will be by the common grid metal-oxide-semiconductor M5(10 of drain structure altogether), M6(11), M7 and M8, inductance L 1, capacitor C 11, C12, C13, C14 forms, its annexation is: leak altogether the PMOS pipe M5(10 be connected with common grid) manage M6(11 with NMOS) to pipe, it is source amplifier, its grid is connected with input matching circuit, metal-oxide-semiconductor M5(10) source electrode and current source I2(12) be connected, be connected to the first current source I1 together with the source electrode of the source electrode of metal-oxide-semiconductor M6 and another symmetrical branch road NMOS pipe M8.Further, the source electrode of PMOS pipe M9 is connected the drain electrode of pipe with described NMOS pipe M6, and as the common gate current follower, its grid is connected with power supply, and drain electrode is connected with described output end vo ut1.Capacitor C 13 and C14 are ac-coupled to the grid of managing metal-oxide-semiconductor M9 and M10 by metal-oxide-semiconductor M6 and M8 amplifying signal respectively.
Feedback circuit (5) mainly comprises feedback resistance Rf(13), two-way LC(14 in parallel) circuit, and capacitor C 15(15), C15
(15) for the isolated DC signal, inoperative to signal.Its inductance L f is in parallel with capacitor C f, one end of resistance R _ f (13) is connected with load resistance RL, one end and LC(14 in parallel) end of circuit is connected, capacitor C 15(15) an end and LC(14 in parallel) other end of circuit is connected, the other end is connected with input matching circuit.
Shown in Fig. 4, analyzed the current multiplexing of amplifying stage and high-frequency gain compensation, for the application of high-gain and low-power consumption, improve.Can be at M5(10) source electrode inject certain direct current I2(12), can reduce the direct current pressure drop on load resistance and not affect the small signal gain of circuit.M5(10) pipe and M6(11) pipe formed the common-source stage amplification, and certain mutual conductance is provided, in the situation that do not increase electric current, improved the gain of circuit.While M6(11) pipe has been shunted the direct current of load resistance, has improved the direct voltage remaining of output.
Shown in Fig. 5, Zin1 is the equivalent input impedance of seeing into from feedback network, and Cin is input mutual conductance pipe equivalent input capacitance, means that input reaches all parasitic capacitances for ground, comprises Cg and the part Miller electric capacity of mutual conductance pipe.According to the circuit small-signal model shown in Fig. 5, in principle, insert the decline that the inductance be in series with Cin can improve high-frequency gain, obtain voltage gain:
Above-described embodiment is only preferred embodiment of the present invention, not is used for limiting practical range of the present invention.Be that all equalizations of doing according to content of the present invention change and modify, all contained by the claims in the present invention scope required for protection.
Claims (5)
1. a high-gain low-noise amplifier, is characterized in that consisting of difference preamplifier, band pass filter, intergrade amplifying circuit, load stage, feedback stage; Wherein:
A difference preamplifier, it has input 1, input 2 and operational amplifier N1, and input 1 is connected respectively RF-INP and RF-INN radiofrequency signal two-way input with input 2;
A band pass filter, it has an input Vin, dual operational amplifier and signal output part Vo, and described dual operational amplifier comprises operational amplifier N21 and N22, and the output end vo of described band pass filter is connected with the input of intergrade amplifying circuit;
An input matching circuit, it is comprised of two-way LC parallel circuits, and it has input 1 and input 2, output 1 and output 2, input 1 connects the input of intergrade amplifying circuit, and input 2 is by capacitor C 12 ground connection;
An intergrade amplifying circuit is for being total to the grid single-input double-output differential amplifier of drain structure altogether, and it has input, output 1 and output 2, the output end vo of its input 1 connecting band bandpass filter; Its output 1 is connected with Vout2 with the output end vo ut1 of high-gain low-noise amplifier respectively with output 2;
A feedback circuit, two-way LC parallel circuits is attempted by between load resistance RL and input matching circuit.
2. high-gain low-noise amplifier according to claim 1, it is characterized in that: described band pass filter mainly is comprised of operational amplifier N21 and N22, the negative input end of described operational amplifier N21 is by the resistance R 5 of series connection, capacitor C 9 is connected with input Vin, the negative input end of described operational amplifier N21 and series resistance R6, capacitor C 8 connects, described capacitor C 8 ground connection, the negative input end of described operational amplifier N21 is connected with operational amplifier N21 output, the negative input end of described operational amplifier N22 is connected with the output of operational amplifier N21, the positive input terminal of described operational amplifier N21 is connected with the positive input terminal of operational amplifier N22, the positive input terminal of operational amplifier N21 is by series connection tunable capacitor C10, resistance R 7 is connected with ground, the negative input end of described operational amplifier N22 is connected with output end vo by resistance R 8.
3. high-gain low-noise amplifier according to claim 1, it is characterized in that: described difference preamplifier adopts the topological structure of the single output of dual input difference, ac capacitor coupling and differential capacitance feedback, comprises the first differential operational amplifier N1, forward coupling capacitance C1, reverse coupled capacitor C 2, the first feedback network and the second feedback network and the 7th capacitor C 7.
4. high-gain low-noise amplifier according to claim 2 is characterized in that: band pass filter, by capacitor C 10 is set, makes the frequency of filter be easy to realize regulating, and can also avoid filter simultaneously because the cause influence of parameter.
5. high-gain low-noise amplifier according to claim 1 is characterized in that: described feedback circuit mainly is comprised of two-way lc circuit in parallel; Can remove the source class of traditional source class inductor degeneration low noise amplifier and the inductance of grid by parallel feedback, make circuit performance insensitive to the Q value of inductance.
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| CN 201320147072 CN203368404U (en) | 2013-03-28 | 2013-03-28 | High-gain low noise amplifier |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009723A (en) * | 2014-05-30 | 2014-08-27 | 深圳贝特莱电子科技有限公司 | Integrated fully differential amplifier |
| CN104506144A (en) * | 2014-11-18 | 2015-04-08 | 华中科技大学 | Low-noise differential preamplifier circuit and amplifier |
| CN104779919A (en) * | 2015-05-04 | 2015-07-15 | 中国电子科技集团公司第五十四研究所 | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) |
| CN106160672A (en) * | 2015-04-17 | 2016-11-23 | 展讯通信（上海）有限公司 | Amplifying circuit |
| CN109831181A (en) * | 2019-03-28 | 2019-05-31 | 华峰测控技术(天津)有限责任公司 | A kind of noise suppression circuit and the test circuit including the noise suppression circuit |
| CN111478671A (en) * | 2020-04-13 | 2020-07-31 | 电子科技大学 | Novel low-noise amplifier applied to Sub-GHz frequency band |
| CN115603669A (en) * | 2022-09-27 | 2023-01-13 | 中船重工安谱（湖北）仪器有限公司（Cn） | Differential amplifier circuit |
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2013
- 2013-03-28 CN CN 201320147072 patent/CN203368404U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009723A (en) * | 2014-05-30 | 2014-08-27 | 深圳贝特莱电子科技有限公司 | Integrated fully differential amplifier |
| CN104506144A (en) * | 2014-11-18 | 2015-04-08 | 华中科技大学 | Low-noise differential preamplifier circuit and amplifier |
| CN104506144B (en) * | 2014-11-18 | 2017-08-01 | 华中科技大学 | A kind of low noise difference pre-amplification circuit and amplifier |
| CN106160672A (en) * | 2015-04-17 | 2016-11-23 | 展讯通信（上海）有限公司 | Amplifying circuit |
| CN106160672B (en) * | 2015-04-17 | 2019-03-05 | 展讯通信（上海）有限公司 | Amplifying circuit |
| CN104779919A (en) * | 2015-05-04 | 2015-07-15 | 中国电子科技集团公司第五十四研究所 | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) |
| CN104779919B (en) * | 2015-05-04 | 2018-03-02 | 中国电子科技集团公司第五十四研究所 | A kind of ultra wide band low-power consumption low-noise amplifier of automatic biasing |
| CN109831181A (en) * | 2019-03-28 | 2019-05-31 | 华峰测控技术(天津)有限责任公司 | A kind of noise suppression circuit and the test circuit including the noise suppression circuit |
| CN111478671A (en) * | 2020-04-13 | 2020-07-31 | 电子科技大学 | Novel low-noise amplifier applied to Sub-GHz frequency band |
| CN115603669A (en) * | 2022-09-27 | 2023-01-13 | 中船重工安谱（湖北）仪器有限公司（Cn） | Differential amplifier circuit |
| CN115603669B (en) * | 2022-09-27 | 2024-03-19 | 中船重工安谱（湖北）仪器有限公司 | Differential amplifying circuit |
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