CN201039094Y - A high-gain RF low-noise amplifier - Google Patents
A high-gain RF low-noise amplifier Download PDFInfo
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- CN201039094Y CN201039094Y CNU2007201095767U CN200720109576U CN201039094Y CN 201039094 Y CN201039094 Y CN 201039094Y CN U2007201095767 U CNU2007201095767 U CN U2007201095767U CN 200720109576 U CN200720109576 U CN 200720109576U CN 201039094 Y CN201039094 Y CN 201039094Y
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
Abstract
The utility model discloses a high-gain low-noise RF amplifier, in particular to the low-noise amplifier used for the wireless communication receiver system front-end chip. To solve the faults of the prior art low-noise amplifier, the utility model adopts a shared source shared bar structure difference low noise amplifier constituted by an input matching circuit, a main amplifier circuit, a DC bias circuit and an output matching circuit; the amplifier adopts the capacitance feedback to increase the overall low-noise amplifier gain, and effectively reduces the influence of the Miller effect, the value of negative feedback inductance can be reduced, the parasitic effects are weakened, the amplifying tube bias voltage of the main amplifier circuit can be adjusted to optimize the working states, the noise performance and the input matching performance of the circuit are improved, and both the circuit map area and the flowing piece cost are saved; proved by experience, the power gain is improved by 12dB, the noise coefficient is reduced by 0.9dB, the economic benefit is remarkable.
Description
Technical field
The invention belongs to wireless communication technology field, relate to a kind of high-gain radio frequency low-noise amplifier, particularly be used for the low noise amplifier of wireless communication receiver system radio frequency front end chip.
Background technology
Now, develop rapidly along with various types of wireless communication systems that comprises mobile communication and WLAN (wireless local area network) and technology, formed a market that increases fast with the closely-related radio frequency integrated circuit of radio communication (RFIC), and the extremely concern of world communication related industry becomes the focus of research and development.Low noise amplifier in the wireless communication receiver system radio frequency front end chip also is one of bottleneck of wireless transceiver system design, and the market user is very harsh to the performance requirement of wireless product, has both required low-power consumption, small size, high-performance, requires low-cost again.The signal that antenna receives lies prostrate magnitude at sub-micro, even can be submerged in fully in the noise, and faint signal like this is amplified and do not worsen signal to noise ratio is the technical barrier that low noise amplifier designs.Low noise amplifier is the key modules in the wireless receiver system, and its noise factor has directly determined the lower limit of the noise factor of whole system, and the sensitivity of system is had decisive influence.In addition, also require low noise amplifier to have sufficiently high gain amplifier, present specific input impedance and antenna and realize impedance matching, and alap power consumption.
General low noise amplifier is the single-ended structure that inputs to single-ended output, the low noise amplifier of this type of single-ended export structure requires frequency mixer thereafter also to be necessary for single-ended input type, thereby has following important shortcoming: it can't reduce the common-mode noise of frequency mixer effectively and reduce the leakage of local oscillator to frequency mixer output.Secondly, it is very responsive for the stray inductance of ground connection.If adopt the low noise amplifier of differential configuration, can effectively address these problems.
Radio frequency low-noise amplifier in the past generally adopts GaAs, Bipolar or BiCMOS technology, cost height.Along with the development of radio-frequency (RF) CMOS technology, low cost, low-power consumption and high integration under the high frequency can have been realized.Traditional CMOS differential configuration amplifier circuit in low noise as shown in Figure 1.In this structure, M01～M04 is the active device that amplifies, inductance L 01 and L02 make 50 ohms impedance match of two inputs of differential signal and antenna, L03 and L04 with the resonance frequency of the input circuit of low noise amplifier be tuned on the carrier frequency of input radio frequency signal, the output loop of L05 and the tuning low noise amplifier of L06 and impedance matching, current source Iss then provides direct current biasing for the whole amplifier circuit.It adopts the negative feedback of inductive source end to realize noise optimization, but, because the overlap capacitance that the grid one of M01 and M02 leak can reduce from the grid of M011 and M02 and the impedance between leaking significantly, make noiseproof feature and input mate all variation, must strengthen the negative feedback inductor value compensates, simultaneously, this overlap capacitance also can reduce the power one current conversion efficient of low noise amplifier by Miller effect, reach the required voltage gain, must increase load impedance, the noise of formation difference cascode circuit transistor and the drain terminal current noise of amplifier tube also can be increased.To suppress the influence of Miller effect in addition, need be with the common gate device of large-size reducing the transistorized gain of common source, but incident source end parasitic capacitance can significantly be amplified the internal noise of gate device high frequency altogether.The defective of this type of low noise amplifier is apparent, assign to optimize noise with obtaining enough big negative feedback inductor value with enough resistance section of big input impedance, consequently total amplifying stage mutual conductance reduces, and the gain of whole amplifier is reduced, and then influences the system noise of whole receiver.
Summary of the invention
The objective of the invention is to propose a kind of high-gain radio frequency low-noise amplifier for overcoming the weak point of prior art, circuit improves gain under the prerequisite with good noiseproof feature, and can significantly improve the noiseproof feature of system.
Above-mentioned purpose of the present invention realizes by the following technical solutions: a kind of high-gain radio frequency low-noise amplifier, comprise input matching circuit, and main amplifier circuit, dc bias circuit and output matching circuit, as shown in Figure 2.
An input matching circuit, it has input 1 and input 2, output 1 and output 2, and input 1 is connected RF_INP and RF_INN radiofrequency signal two-way input respectively with input 2.
A main amplifier circuit is the differential amplifier of cascodes, and it has input 1 and input 2, output 1 and output 2 and constant-current source incoming end, and its input 1 is connected input matching circuit output 1 and output 2 respectively with input 2; Its output 1 and output 2 are connected in output OUT_P and the OUT_N that connects low noise amplifier respectively; Its constant-current source incoming end connects the output of dc bias circuit.
A dc bias circuit, it has an input and an output, and its input links to each other with reference voltage Vb, and its output links to each other with the constant-current source incoming end.
An output matching circuit, two-way lc circuit all are attempted by between power vd D and the ground, and it has output 1 and output 2, are attempted by the output OUT_P and the OUT_N of low noise amplifier.
Described input matching circuit is a two independent LC series filtering network, and it is by capacitor C 1 and C2, and inductance L 3 and L4 form.Input 1 and input 2 are connected the radiofrequency signal output RF_INP and the RF_INN of low noise amplifier prime respectively, and output 1 and output 2 are connected the input 1 and the input 2 of main amplifier circuit, the i.e. grid of metal-oxide-semiconductor M1 and M2 respectively.
Described main amplifier circuit is the differential amplifier of cascodes, and it is by metal-oxide-semiconductor M1, M2, M3 and M4, and inductance L 1 and L2, capacitor C 3 and C4 and resistance R 1 and R2 form.The two-way difference radio-frequency signal output of input matching circuit inserts the grid of metal-oxide-semiconductor M1 and M2 respectively, the source electrode of metal-oxide-semiconductor M1 and M2 connects the end of inductance L 1 and L2 respectively, the other end of inductance L 1 and L2 and contact are the constant-current source incoming end, are connected to the output of constant-current source; Metal-oxide-semiconductor M1 and M3, M2 and M4 are the drain-source series connection, M1 and M2 drain electrode connect the source electrode of metal-oxide-semiconductor M3 and M4 respectively, the drain electrode of metal-oxide-semiconductor M1 is connected to the grid of metal-oxide-semiconductor M4 by capacitor C 3, the drain electrode of metal-oxide-semiconductor M2 is connected to the grid of metal-oxide-semiconductor M3 by capacitor C 4, the grid of metal-oxide-semiconductor M3 and M4 directly is connected on the power vd D, the drain electrode of metal-oxide-semiconductor M3 and M4 is the output of main amplifier circuit, connects power vd D feeder ear by output matching circuit.The end of resistance R 1 and R2 connects the drain electrode of metal-oxide-semiconductor M1 and M2 respectively, and the other end connects the grid of metal-oxide-semiconductor M1 and M2 respectively, and fixedly gate bias voltage is provided.
Described dc bias circuit is a complementary type direct current biasing constant-current source, and it is made up of metal-oxide-semiconductor M5～M11, and wherein the M7 of the M5 of PMOS pipe and M6 and metal-oxide-semiconductor and M8 are common gate structure; The drain electrode of metal-oxide-semiconductor M10 connects inductance L 1 and L2's and connect end, and the source electrode of M10 connects the drain electrode of M11, the source ground of M11; The gate coupled of PMOS pipe M5 and M6 terminates on the input of reference voltage Vb, reference voltage Vb is provided by system, drain electrode connects the drain electrode of metal-oxide-semiconductor M7 and M8 respectively, their source electrode all is connected on the power vd D, and the gate coupled of M7 and M8 is connected on the grid of M10, the source electrode of M7 connects the drain electrode of M9, and the gate coupled of M9 and M11 is connected in the drain electrode of M7, and the source electrode of M8 and M9 is ground connection all; It has an input and an output, and its input links to each other with reference voltage Vb input, and its output links to each other with the constant-current source incoming end of main amplifier circuit.
The two-way direct current biasing grid voltage of described main amplifier circuit is adjustable partial pressure type bias voltage, it is by resistance R 3, R4, the two-way voltage divider that R5 and R6 form, resistance R 3 one terminates at power vd D feeder ear, resistance R 4 one end ground connection, the branch pressure side of resistance R 3 and R4 is connected resistance R 5 and R6, the other end of resistance R 5 and R6 is the output of partial pressure value Vb1 and Vb2, be connected on the grid of metal-oxide-semiconductor M1 and M2 respectively, resistance R 3 and R4 are variable resistor, adjust direct current grid voltage Vb1 and the Vb2 of metal-oxide-semiconductor M1 and M2 by the resistance that changes R3 or R4, optimize the operating state of amplifier.
The two-way direct current biasing grid voltage of described main amplifier circuit is active biased voltage, it is by metal-oxide-semiconductor M12, capacitor C 7, resistance R 7 and R8 and metal-oxide-semiconductor M13, capacitor C 8, the active biased circuit of two-way that resistance R 9 and R10 form, the drain electrode of metal-oxide-semiconductor M12 and M13 is connected on the power vd D by resistance R 7 and R9 respectively, their source ground, grid is in parallel with drain electrode also respectively by capacitor C 7 and C8 ground connection, the end of resistance R 8 and R10 is connected on the grid of metal-oxide-semiconductor M21 and M13 respectively, the other end of resistance R 8 and R10 is a two-way direct current biasing grid voltage output, connect the two-way metal-oxide-semiconductor M1 of main amplifier circuit and the grid of M2 respectively, the direct current biasing grid voltage is active biased formation.
Described output matching circuit is by capacitor C 5 and C6, and inductance L 5 and L6 form.L5 and C5, L6 and C6 are and are connected in series, and their series connection end is connected on the drain electrode of M3 and M4 respectively, i.e. the output OUT_P and the OUT_N of the output of low noise amplifier, the end of L5 and L6 is connected power end VCC, the end ground connection of C5 and C6; The value of L5 and C5 and L6 and C6 satisfies low noise amplifier output and is tuned in centre frequency.
Difference is amplified input radio frequency signal RF_INP and RF_INN, be input to the grid of metal-oxide-semiconductor M1 and M2 respectively by capacitor C 1 and C2 and inductance L 3 and L4, the source electrode of metal-oxide-semiconductor M1 and M2 meets inductance L 1 and L2 respectively, their drain electrode connects the source electrode of metal-oxide-semiconductor M3 and M4 respectively, signal after metal-oxide-semiconductor M1 amplifies is ac-coupled to the grid of metal-oxide-semiconductor M4 by capacitor C 3, signal after metal-oxide-semiconductor M2 amplifies is ac-coupled to the grid of metal-oxide-semiconductor M3 by capacitor C 4, and the grid of metal-oxide-semiconductor M3 and M4 directly is connected on the power vd D, their drain electrode is also received on the power vd D by inductance L 5 and L6 respectively, and their drain electrode simultaneously is respectively by capacitor C 5 and C6 ground connection.The other end of inductance L 1 and L2 is received the drain electrode of metal-oxide-semiconductor M10, and the source electrode of M10 connects the drain electrode of M11, the source ground of M11.The gate coupled of PMOS pipe M5 and M6 is connected on the reference voltage Vb, their source electrode is connected on the power vd D, drain electrode connects the drain electrode of metal-oxide-semiconductor M7 and M8 respectively, and the gate coupled of M7 and M8 is connected on the grid of M10, the source electrode of M7 connects the drain electrode of M9, the gate coupled of M9 and M11 is connected in the drain electrode of M7, and the source electrode of M8 and M9 is ground connection all.Signal after the amplification is exported from the drain electrode of M3 and M4 respectively.In this structure, capacitor C 1 and C2 are capacitances, inductance L 1 and L2 are respectively applied for and produce a real part resistance, make 50 ohms impedance match of two inputs of differential signal and antenna, L3 and L4 be respectively applied for the resonance frequency of the input circuit of low noise amplifier be tuned on the carrier frequency of input radio frequency signal, M1～M4 is the active device that is used to amplify, capacitor C 3 and C4 are ac-coupled to metal-oxide-semiconductor M1 and M2 amplifying signal the grid of metal-oxide-semiconductor M4 and M3 respectively, latter two pipe provides additional gain again, be total to the metal-oxide-semiconductor M3 of grid connection and the Cascode tube side formula of M4, can improve the output impedance of amplifier, make the load impedance of amplifier decide by laod network fully.Cascode transistor M3 and M4 provide a low-impedance load for again amplifier tube M1 and M2, make amplifier tube be in rational low gain, have reduced amplifier tube Miller effect pair amplifier Effect on Performance.The Cascode transistor has also improved the reverse isolation performance, can effectively weaken the leakage of local oscillated signal, makes the amplifier unilateralization and simplified design equation greatly, and has avoided stability problem.The Cascode transistor also makes amplifier tube drain terminal voltage reduce, and has weakened the saturated influence to amplifier tube of carrier velocity.C5 and C6 and L5 and L6 are respectively applied for the tuning and impedance matching of the output loop of low noise amplifier, form resonant tank respectively in total node capacitor of the drain electrode end of M3 and M4 and inductance L 5 and L6, both increased gain, improved the bandpass filtering ability simultaneously again at the centre frequency place.The current source Iss that is made of M5～M11 provides direct current biasing for the whole amplifier circuit.
The technical scheme of the improved CMOS radio frequency low-noise amplifier of the utility model has following tangible advantage:
1) respectively metal-oxide-semiconductor M1 and M2 amplifying signal are ac-coupled to the grid of metal-oxide-semiconductor M4 and M3 by capacitor C 3 and C4, provide additional amplification quantity by latter two pipe, increase the gain of whole low noise amplifier, empirical tests, power gain have the raising of 12dB;
2) gate leakage capacitance of metal-oxide-semiconductor M1 and M2 exchanges ground connection by C3 with C4 respectively, has reduced the influence of Miller effect effectively, and the noiseproof feature of circuit and input matching performance all are improved, empirical tests, and noise factor has reducing of 0.9dB;
3) existence of capacitor C 3 and C4, the value of the source end negative feedback inductor of compensating MOS pipe M1 and the influence of M2 gate leakage capacitance can reduce, and the ghost effect influence of negative feedback inductor is weakened, and has improved the circuit high frequency performance.
4) inductance occupies very big area in microelectronic circuit, and the value of source end negative feedback inductor reduces both to have saved the circuit layout area, has saved the flow cost again, remarkable in economical benefits.
Description of drawings
Fig. 1 is the CMOS radio frequency low-noise amplifier electricity principle schematic of prior art.
Fig. 2 is the CMOS radio frequency low-noise amplifier first embodiment electrical block diagram of the present invention.
Fig. 3 is the CMOS radio frequency low-noise amplifier second embodiment electrical block diagram of the present invention.
Fig. 4 is CMOS radio frequency low-noise amplifier the 3rd an embodiment electrical block diagram of the present invention.
Among the figure: the P road output of the P road input of RF_INP radiofrequency signal, the N input of RF_INN radiofrequency signal, OUT_P-low noise amplifier, the N road output of OUT_N-low noise amplifier, Vb-reference voltage, Vb1-direct current biasing grid voltage 1, Vb2-direct current biasing grid voltage 2.
Embodiment
A kind of high-gain radio frequency low-noise amplifier that the present invention proposes is described in detail as follows in conjunction with topological structure schematic diagram and example structure schematic diagram:
A kind of high-gain radio frequency low-noise amplifier that the present invention proposes comprises input matching circuit, main amplifier circuit, output matching circuit and dc bias circuit.As shown in Figure 2.
Input matching circuit mainly is by capacitor C 1 and C2, and inductance L 3 and L4 form, and its annexation is: the radiofrequency signal RF_INP and the RF_INN of difference input are input to main amplifier circuit by C1 and L3 and C2 and L4 respectively.
Main amplifier circuit mainly is the metal-oxide-semiconductor M1 by cascodes, M2, M3 and M4, inductance L 1 and L2 and capacitor C 3 and C4 form, its annexation is: the grid that is input to metal-oxide-semiconductor M1 and M2 through the difference radio-frequency signal of input matching circuit respectively, and the source electrode of metal-oxide-semiconductor M1 and M2 meets inductance L 1 and L2 respectively, their drain electrode connects the source electrode of metal-oxide-semiconductor M3 and M4 respectively, the drain electrode of metal-oxide-semiconductor M1 is connected to the grid of metal-oxide-semiconductor M4 by capacitor C 3, the drain electrode of metal-oxide-semiconductor M2 is connected to the grid of metal-oxide-semiconductor M3 by capacitor C 4, and the grid of metal-oxide-semiconductor M3 and M4 directly is connected on the power vd D, and the other end of inductance L 1 and L2 is received on the constant-current source output contact.
Output matching circuit is by capacitor C 5 and C6, and inductance L 5 and L6 form.Export from the drain electrode of metal-oxide-semiconductor M3 and M4 respectively through the signal after the main amplifier amplification, the end of inductance L 5 and L6 is connected to the drain electrode of metal-oxide-semiconductor M3 and M4, the other end is connected on the power vd D, and the end of capacitor C 5 and C6 also is connected to the drain electrode of metal-oxide-semiconductor M3 and M4, other end ground connection.
The constant-current source of dc bias circuit for being made of metal-oxide-semiconductor M5～M11, wherein M5 and M6 are the PMOS pipe.The drain electrode of metal-oxide-semiconductor M10 connects inductance L 1 and L2,, the source electrode of M10 connects the drain electrode of M11, the source ground of M11.The gate coupled of PMOS pipe M5 and M6 is connected on the reference voltage input terminal Vb, their source electrode all is connected on the power vd D, drain electrode connects the drain electrode of metal-oxide-semiconductor M7 and M8 respectively, and the gate coupled of M7 and M8 is connected on the grid of M10, the source electrode of M7 connects the drain electrode of M9, the gate coupled of M9 and M11 is connected in the drain electrode of M7, and the source electrode of M8 and M9 is ground connection all.
The difference radio-frequency signal that input matching circuit receives antenna by capacitor C 1 and C2 earlier every going flip-flop, again by inductance L 3 and L4 with the resonance frequency of the input circuit of low noise amplifier be tuned on the carrier frequency of input radio frequency signal.
The circuit structure of the differential low noise amplifier of main amplifier, inductance L 1 wherein and L2 are respectively applied for and produce a real part resistance, make 50 ohms impedance match of two inputs of differential signal and antenna, M1～M4 is the active device that is used to amplify, wherein M1 and M2 are amplifier tubes, capacitor C 3 and C4 are ac-coupled to metal-oxide-semiconductor M1 and M2 amplifying signal the grid of metal-oxide-semiconductor M4 and M3 respectively, provide additional gain by latter two pipe, simultaneously capacitor C 3 and C4 can reduce Miller effect and amplifier tube gate leakage capacitance to the Circuit Matching performance, the influence of power one current conversion efficient and noise factor.Metal-oxide-semiconductor M3 that common grid mode connects and M4 are the Cascode pipes, and they can improve the output impedance of amplifier, make the load impedance of amplifier be decided by laod network fully; The Cascode transistor provides a low-impedance load for amplifier tube M1 and M2, and the gain of amplifier tube is reduced to some extent, and Miller effect pair amplifier Effect on Performance then greatly reduces; The Cascode transistor has also improved the reverse isolation performance, has weakened the leakage of local oscillated signal, makes amplifier become a unilateralized amplifier simultaneously, and this can make design equation simplify greatly, and avoids stability problem; The Cascode transistor also makes amplifier tube drain terminal voltage reduce, and has weakened the saturated influence to amplifier tube of carrier velocity.
In the output matching circuit, C5 and C6 and L5 and L6 are respectively applied for the tuning and impedance matching of the output loop of low noise amplifier.Forming resonance respectively at the total node capacitor of the drain terminal of M3 and M4 and inductance L 5 and L6 had not only increased in the gain at centre frequency place simultaneously but also improved the bandpass filtering ability of wishing very much extraly.
Dc bias circuit provides direct current biasing for the whole amplifier circuit.
The second and the 3rd embodiment circuit structure of CMOS radio frequency low-noise amplifier of the present invention such as Fig. 3 and as shown in Figure 4, their basic circuit structure no longer is repeated in this description as the first embodiment circuit.Mainly partial pressure type and the active formula direct current grid voltage circuit that metal-oxide-semiconductor M1 and M2 are set up the direct current gate voltage is explained as follows.
It is 50 ohm that the source impedance of low noise amplifier generally immobilizes.If keep that transistorized characteristic frequency is constant promptly to keep transistorized overdrive voltage constant, there is an optimal value in the mutual conductance of amplifier tube, can be so that the noiseproof feature optimum of this amplifier.When the noiseproof feature of amplifier is optimum, can calculate the direct current gate voltage of amplifier tube.
In the embodiment shown in fig. 3, the foundation of this direct current gate voltage realizes by electric resistance partial pressure.The voltage of resistance R 3 and R4 junction is exactly the direct current gate voltage of metal-oxide-semiconductor M1 and M2.Resistance R 5 and R6 stop AC signal by bleeder circuit, avoid the signal path of low noise amplifier to be subjected to the influence of bleeder circuit.Resistance R 3 or R4 realize with variable resistor, can come the direct current grid voltage of tuning metal-oxide-semiconductor M1 and M2 by the resistance that changes R3 or R4, optimize the operating state of amplifier.
In the embodiment shown in fig. 4, the foundation of this direct current gate voltage is by active biased realization.As shown in Figure 4, the drain electrode of metal-oxide-semiconductor M12 and M13 is connected on the power vd D by resistance R 7 and R9 respectively, their source ground, their grid links to each other with drain electrode and passes through capacitor C 7 and C8 ground connection respectively simultaneously, and the grid of metal-oxide-semiconductor M12 and M13 also is connected on the grid of metal-oxide-semiconductor M1 and M2 by resistance R 8 and R10 respectively.Metal-oxide-semiconductor M12 and M1, M13 and M2 constitute current-mirror structure respectively, the feasible bias current and the proportional mirror of electric current that flows through M5 and M6 that flows through amplifier tube M1 and M2.Seemingly set up in order to guarantee that current mirror is close, metal-oxide-semiconductor M12 is the same with M1 and M2 with M13, adopts minimum channel length.Resistance R 8 and R10 stop AC signal by bleeder circuit, avoid the signal path of low noise amplifier to be subjected to the influence of biasing circuit.The thermal noise that resistance R 8 and R10 produce can be ignored the influence of circuit is approximate, but when chip is realized, can introduce parasitic capacitance at the input node of amplifier.The noise that capacitor C 7 and C8 filtering biasing circuit produce, the noise of eliminate bias circuit be to the influence of low noise amplifier noiseproof feature, and capacitor C 7 and C8 can also stable flow cross the electric current of metal-oxide-semiconductor M1, M2 and M12, M13, raising antijamming capability.
Claims (7)
1. a high-gain radio frequency low-noise amplifier is characterized in that being made of input matching circuit, main amplifier circuit, dc bias circuit and output matching circuit; Wherein:
An input matching circuit, it has input 1 and input 2, output 1 and output 2, and input 1 is connected RF_INP and RF_INN radiofrequency signal two-way input respectively with input 2;
A main amplifier circuit is the differential amplifier of cascodes, and it has input 1 and input 2, output 1 and output 2 and constant-current source incoming end, and its input 1 is connected input matching circuit output 1 and output 2 respectively with input 2; Its output 1 and output 2 are connected in output OUT_P and the OUT_N that connects low noise amplifier respectively; Its constant-current source incoming end connects the output of dc bias circuit;
A dc bias circuit, it has an input and an output, and its input links to each other with reference voltage Vb, and its output links to each other with the constant-current source incoming end;
An output matching circuit, two-way lc circuit all are attempted by between power vd D and the ground, and it has output 1 and output 2, are attempted by the output OUT_P and the OUT_N of low noise amplifier.
2. a kind of high-gain radio frequency low-noise amplifier according to claim 1, it is characterized in that input matching circuit is a two independent LC series filtering network, it is by capacitor C 1 and inductance L 3, C2 and L4 are composed in series, input 1 and input 2 are connected the radiofrequency signal output RF_INP and the RF_INN of low noise amplifier prime respectively, output 1 and output 2 are connected the input 1 and the input 2 of main amplifier circuit, the i.e. grid of metal-oxide-semiconductor M1 and M2 respectively.
3. a kind of high-gain radio frequency low-noise amplifier according to claim 1, it is characterized in that main amplifier circuit is the differential amplifier of cascodes, it is by metal-oxide-semiconductor M1, M2, M3 and M4, and inductance L 1 and L2, capacitor C 3 and C4 and resistance R 1 and R2 form; The two-way difference radio-frequency signal output of input matching circuit inserts the grid of metal-oxide-semiconductor M1 and M2 respectively, the source electrode of metal-oxide-semiconductor M1 and M2 connects the end of inductance L 1 and L2 respectively, the other end of inductance L 1 and L2 and contact are the constant-current source incoming end, are connected to the output of constant-current source; Metal-oxide-semiconductor M1 and M3, M2 and M4 are the drain-source series connection, M1 and M2 drain electrode connect the source electrode of metal-oxide-semiconductor M3 and M4 respectively, the drain electrode of metal-oxide-semiconductor M1 is connected to the grid of metal-oxide-semiconductor M4 by capacitor C 3, the drain electrode of metal-oxide-semiconductor M2 is connected to the grid of metal-oxide-semiconductor M3 by capacitor C 4, the grid of metal-oxide-semiconductor M3 and M4 directly is connected on the power vd D, the drain electrode of metal-oxide-semiconductor M3 and M4 is the output of main amplifier circuit, connects power vd D feeder ear by output matching circuit; The end of resistance R 1 and R2 connects the drain electrode of metal-oxide-semiconductor M1 and M2 respectively, and the other end connects the grid of metal-oxide-semiconductor M1 and M2 respectively, is fixing grid bias voltage circuit.
4. a kind of high-gain radio frequency low-noise amplifier according to claim 1, it is characterized in that dc bias circuit is a complementary type direct current biasing constant-current source, it is made up of metal-oxide-semiconductor M5～M11, and wherein the M7 of the M5 of PMOS pipe and M6 and metal-oxide-semiconductor and M8 are common gate structure; The drain electrode of metal-oxide-semiconductor M10 connects inductance L 1 and L2's and connect end, and the source electrode of M10 connects the drain electrode of M11, the source ground of M11; The gate coupled of PMOS pipe M5 and M6 terminates on the input of reference voltage Vb, and drain electrode connects the drain electrode of metal-oxide-semiconductor M7 and M8 respectively, and their source electrode all is connected on the power vd D; The gate coupled of M7 and M8 is connected on the grid of M10, and the source electrode of M7 connects the drain electrode of M9, and the gate coupled of M9 and M11 is connected in the drain electrode of M7, and the source electrode of M8 and M9 is ground connection all; It has an input and an output, and its input links to each other with the input of reference voltage Vb, and its output links to each other with the constant-current source incoming end of main amplifier circuit.
5. a kind of high-gain radio frequency low-noise amplifier according to claim 1 is characterized in that described output matching circuit is made up of inductance L 5 and L6, capacitor C 5 and C6; L5 and C5, L6 and C6 are and are connected in series, and their series connection end is connected on the drain electrode of M3 and M4 respectively, i.e. the output OUT_P and the OUT_N of the output of low noise amplifier, the end of L5 and L6 is connected power end VCC, the end ground connection of C5 and C6; L5 and C5 and L6 and C6 make low noise amplifier output be tuned in centre frequency.
6. a kind of high-gain radio frequency low-noise amplifier according to claim 1, the two-way direct current biasing grid voltage that it is characterized in that main amplifier circuit is adjustable partial pressure type bias voltage, it is made up of resistance R 3, R4, R5 and R6, resistance R 3 one terminates at power vd D feeder ear, resistance R 4 one end ground connection, the branch pressure side of resistance R 3 and R4 is connected resistance R 5 and R6, the other end of resistance R 5 and R6 is the output of partial pressure value Vb1 and Vb2, be connected on the grid of metal-oxide-semiconductor M1 and M2 respectively, resistance R 3 and R4 are variable resistor.
7. a kind of high-gain radio frequency low-noise amplifier according to claim 1, the two-way direct current biasing grid voltage that it is characterized in that main amplifier circuit is active biased voltage, it is by metal-oxide-semiconductor M12, capacitor C 7, resistance R 7 and R8 and metal-oxide-semiconductor M13, capacitor C 8, the active biased circuit of two-way that resistance R 9 and R10 form, the drain electrode of metal-oxide-semiconductor M12 and M13 is connected on the power vd D by resistance R 7 and R9 respectively, their source ground, grid is in parallel with drain electrode also respectively by capacitor C 7 and C8 ground connection, the end of resistance R 8 and R10 is connected on the grid of metal-oxide-semiconductor M12 and M13 respectively, the other end of resistance R 8 and R10 is a two-way direct current biasing grid voltage output, connect the two-way metal-oxide-semiconductor M1 of main amplifier circuit and the grid of M2 respectively, the direct current biasing grid voltage is active biased formation.
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