CN103166581A - Radio frequency low noise amplifier with high linearity - Google Patents
Radio frequency low noise amplifier with high linearity Download PDFInfo
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- CN103166581A CN103166581A CN2013100332642A CN201310033264A CN103166581A CN 103166581 A CN103166581 A CN 103166581A CN 2013100332642 A CN2013100332642 A CN 2013100332642A CN 201310033264 A CN201310033264 A CN 201310033264A CN 103166581 A CN103166581 A CN 103166581A
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Abstract
The invention provides a radio frequency low amplifier with high linearity. The amplifier comprises an input common emitter gate, an output common bar gate, a load output matching network and a biasing circuit, wherein the biasing circuit comprises a charge pump feedback loop and a high linearity biasing circuit of a feed biasing circuit. The input common-emitter grade and the output common bar gate refer to hetero junction bipolar transistor (HBT)-metal-oxide-semiconductor field effect transistor (MOSFET) tubular structure in order to improve linearity and obtain good low noise performance. The biasing end of an input tube of the input common emitter gate is connected with the high linearity biasing circuit, the feed biasing circuit is a combination structure of a resistance feed biasing circuit and a diode feed biasing circuit. When a strong signal is inputted, the input tube provides a base current to compensate the decrease of voltage of a base electrode and an emitting electrode of the input tube. When a small signal is input, the charge pump feedback loop makes no contribution, the feed biasing circuit is in a regular work so that a constant biasing voltage is obtained, and therefore the linearity of the low noise amplifier is improved remarkably. The amplifier has the advantages of guaranteeing the performance of the low noise performance, improving greatly the linearity and achieving monolithic integration.
Description
Technical field
The invention belongs to the twireless radio-frequency communication technical field of integrated circuits, relate to there is low noise, the low noise amplifier of high linearity, relate in particular to a kind of radio frequency low-noise amplifier of high linearity, be applied in wireless communication receiver system radio frequency front end chip.
Background technology
In the wireless communication RF receiving chip, low noise amplifier is positioned at foremost, is the key modules of whole radio-frequency front-end, and its noise factor has directly determined the lower limit of the noise factor of whole receiver, affects the receiving sensitivity of system.Low noise amplifier should produce under the prerequisite of noise in lowland as far as possible, radiofrequency signal is amplified, to reduce the impact on signal of noise that the subsequent stages module produces.Low noise amplifier should also provide good input impedance coupling, to avoid or to reduce the power loss of signal in transmitting procedure.For fear of the non-linear impact on signal quality, also require low noise amplifier to there is the higher linearity.SiGe BiCMOS technique has the advantages that high frequency characteristics is good, noise is extremely low, and higher power gain and the linearity can be provided, and therefore is applicable to low noise amplifier.
Fast development along with wireless communication technology, in the application scenario of some communication technology, such as portable phone, mobile TV etc., receiver easily is subject to the interference of strong signal, have a strong impact on the quality of signal, therefore require the low noise amplifier of front end to there is the sufficiently high linearity.For obtaining high-isolation, common low noise amplifier all can adopt the cascode structure, in SiGe BiCMOS technique, is novel cascode circuit--the HBT structure.But, due to the restriction of HBT pipe self, the linearity is difficult to the higher demand that meets the demands usually.In order to improve the linearity of low noise amplifier, adopt the method that increases electric current as prior art, when improving the linearity, can cause noiseproof feature to worsen.
The amplifier formed for the HBT pipe, its 1dB compression point performance is relevant with the biasing circuit of HBT pipe.Practical bias mode mainly contains two kinds of the biasing of inductance feed, the biasings of resistance feed at present.The biasing of inductance feed can reach low noise and high linearity, but uses the sheet internal inductance, realizes bringing the defect that increases loss and strengthen chip area to circuit, if can increase peripheral cell and introduce parasitic defect with the sheet external inductance.The biasing of resistance feed is connected to the base stage of inputting amplifier tube by resistance, realize simply, and be easy to Embedded, but the biasing of resistance feed exists deterioration noiseproof feature and the poor defect of the linearity.
Document [1] the Pingxi Ma delivered at present, et al., " A novel bipolar-MOSFET low-noise amplifier (BiFET LNA); circuit configuration; design methodology, and chip implementation, "
iEEE Transactions on Microwave Theory and Techniques,vol.51, pp. 2175-2180,2003), as shown in Figure 1.Low noise amplifier comprises input stage, output stage, load output matching network and resistance feed biasing circuit.Resistance feed biasing circuit is by constant-current source IB01, HBT manages Q03, Q04, resistance R b01, Rb02 form, input stage Q01 pipe collector, output stage Q02 is connected with Q01 pipe utmost point electrode, constant-current source IB01 is poured into the tie point of Q03 pipe base stage and Q04 pipe collector by power vd D, cross-over connection resistance R b01 between Q04 pipe base stage and Q03 emitter, Q03 manages grounded emitter, the Q03 collector electrode meets power vd D, the end of resistance R b02 is connected to the Q03 emitter, and the other end of Rb02 is connected with input amplifier tube Q01 base stage, for the Q01 pipe provides base voltage.The Q01 pipe forms mirror current source with the Q02 pipe, constant-current source IB1 pours into Q02 and makes Q02 produce base-emitter voltage, Q03 makes the electric current that flows into Q02 approach more accurately the size of constant-current source IB1, Rb02 is for isolating biasing circuit and radio-frequency input signals, due to the existence of base current, Rb02 is upper can produce pressure drop, makes the base voltage of Q01, Q02 unequal, therefore Rb01 is used for the pressure drop on balance Rb02, makes Q01, Q02 have identical base voltage.For this bias circuit construction, when radio-frequency input signals is very large, need biasing circuit that extra base current is provided, the electric current increase of flowing through resistance R b02 causes the pressure drop on resistance R b02 to increase, and causes the base voltage V of input pipe Q01
breduce, can cause the linearity of severe exacerbation low noise amplifier.In addition, in order to reduce the deterioration of biasing circuit to the main amplifier noiseproof feature, resistance R b02 obtains larger usually.But the Rb02 of large resistance can the serious linearity that limits low noise amplifier.As can be seen here, in the prior art document, low noise amplifier adopts the biasing of traditional resistor feed to exist the raising linearity will inevitably cause the defect of noiseproof feature variation mostly.
Summary of the invention
The objective of the invention is to adopt in order to overcome prior art the low noise amplifier of resistance feed bias circuit construction to be difficult to realize the defect of low noise and high linearity simultaneously, the invention provides a kind of radio frequency low-noise amplifier that can simultaneously realize low noise high linearity, significantly improve again the linearity when obtaining low-noise performance.
The present invention seeks to realize by the following technical solutions:
A kind of radio frequency low-noise amplifier of high linearity, comprise input cascode level, output grid level, load output matching network and biasing circuit altogether, and it is that described biasing circuit is high linear bias circuit;
Described high linear bias circuit comprises a charge pump feedback control loop and a feed biasing circuit; The input of charge pump feedback control loop connects the output signal end RFout of load output matching network, controls two control ends that voltage output end connects the feed biasing circuit for two of the charge pump feedback control loop; The output VB of feed biasing circuit connects the biased electrical pressure side of input cascode level; High linear bias circuit is used to input cascode level HBT pipe base bias voltage end that bias voltage V is provided
b, the charge pump feedback control loop detects the watt level of load output matching network output signal end RFout output signal, and generates the dynamic output current source control voltage Vctl1 of two-way and V
ctl2, output current source is controlled voltage Vctl1 and V
ctl2the corresponding control end connected in two feed biasing circuits, for regulating the size of current of two current source IB1 of feed biasing circuit and B2, and then regulate the bias voltage V that the feed biasing circuit is exported separately
b, for input cascode level base stage provides dynamic, stable bias voltage V
b, realization improves the linearity of low noise amplifier, guarantees the low-noise performance of low noise amplifier simultaneously.
Input cascode level is total to the grid level with output and adopts the HBT-MOSFET tubular construction, and MOSFET pipeline degree is better, is conducive to improve the linearity; Output grid level altogether consists of two metal-oxide-semiconductors that grid connect altogether, and a metal-oxide-semiconductor is biased to operate in saturation region, and another metal-oxide-semiconductor is biased to operate in sub-threshold region; The source electrode of two metal-oxide-semiconductors is connected with the collector electrode of input HBT pipe in input cascode level, and the grid of two metal-oxide-semiconductors is connected respectively the fixed bias voltage V that sheet provides outward
b2, V
b3, the drain electrode of two metal-oxide-semiconductors connects respectively the load output matching network; The output current signal feed-in output matching network that altogether the grid level will flow into from input cascode level, the drain electrode that two metal-oxide-semiconductors are connected in parallel is voltage signal output end RFout.
Described radio frequency low-noise amplifier, it is that described charge pump feedback control loop consists of power-sensing circuit, charge pump and loop filter; Wherein
Described power-sensing circuit is saturation region root mean square RMS wave detector, its input connects radio frequency low-noise amplifier output RFout, its output connects the control end of charge pump, for detection of the average power size of radio frequency low-noise amplifier output signal, for charge pump provides logic control signal;
Described charge pump is two balanced balanced current charging-discharging structures, convert corresponding two-way error signal output to for the logic control voltage signal that power-sensing circuit is produced, the information of the watt level that this two-way error signal comprises the radio frequency output signal, the input of two low pass filters of the corresponding linkloop filter of the two-way output of charge pump;
Described loop filter is comprised of the first low pass filter LPF1 and the second low pass filter LPF2, the first low pass filter LPF1 and the second low pass filter LPF2 respectively have an input and an output, corresponding first current output terminal that connects charge pump of the input of the first low pass filter LPF1, corresponding second current output terminal that connects charge pump of the input of the second low pass filter LPF2, loop filter is for the high frequency clutter of the current signal of filtering charge pump output, the control voltage signal of two direct currents of corresponding generation, the output of the first low pass filter LPF1 is controlled voltage Vctl1 for the feed biasing circuit provides first via output current source, the output of the second low pass filter LPF2 is controlled voltage Vctl2 for the feed biasing circuit provides the second road output current source.
Described radio frequency low-noise amplifier, it is that described feed biasing circuit comprises feedback resistance feed biasing circuit and diode feed biasing circuit, the circuit structure of feed biasing circuit is for to be combined by two feed biasing circuits; Feedback resistance feed biasing circuit power end all is connected power vd D with diode feed biasing circuit power end, feedback resistance feed biasing circuit output and diode feed biasing circuit output tie point are the VB end, feedback resistance feed bias circuit controls end connects the first low pass filter output of charge pump feedback control loop, diode feed bias circuit controls end connects the second low pass filter output of charge pump feedback control loop, and the feed biasing circuit is used to input cascode level input HBT pipe base stage that constant bias voltage V is provided
b.
Described radio frequency low-noise amplifier, it is that described feedback resistance feed biasing circuit is comprised of the first current source IB1, a HBT pipe Q2, the 2nd HBT pipe Q3, the first feedback resistance Rb1, the second feedback resistance Rb2 and the 3rd feedback resistance Rbf, and the output of feedback resistance feed biasing circuit is the VB end; Wherein,
The first current source IB1 mono-end connects power vd D, also have a control end and an output, the control end of the first current source IB1 is connected with the first output of loop filter, and the output of the first current source IB1 connects the collector electrode of a HBT pipe Q2 and the base stage of the 2nd HBT pipe Q3;
The one HBT pipe Q2 base stage is connected by the first feedback resistance Rb1 with the 2nd HBT pipe Q3 emitter, the grounded emitter of the one HBT pipe Q2, the 2nd HBT pipe Q3 collector electrode meets power vd D, the 2nd HBT pipe Q3 emitter is connected with the base stage of input cascode level input HBT pipe Q1 by the second feedback resistance Rb2, and the 3rd feedback resistance Rbf is connected across between a HBT pipe Q2 base stage and input cascode level input HBT pipe Q1 base stage; The output of feedback resistance feed biasing circuit and diode feed biasing circuit output are attempted by the VB end; For reducing the equivalent input impedance of the VB of feed biasing circuit end, to reduce the input HBT pipe Q1 base voltage that strong signal input causes, reduce, make bias voltage V
bconstant.
Described radio frequency low-noise amplifier, it is that described diode feed biasing circuit is comprised of the second current source IB2, the 3rd HBT pipe Q4, the 4th HBT pipe Q5 and the 5th HBT pipe Q6, the 3rd HBT pipe Q4, the 4th HBT pipe Q5 and the 5th HBT pipe Q6 are the diode syndeton, collector electrode and base stage short circuit; The collector electrode of the emitter of the 4th HBT pipe Q5 and the 5th HBT pipe Q6 is connected in series; Wherein:
The second current source IB2 mono-end connects power vd D, also have a control end and an output, the control end of the second current source IB2 is connected with the second output of loop filter, the output of the second current source IB2 connects the 3rd HBT pipe Q4 collector electrode and the 4th HBT pipe Q5 collector electrode, the grounded emitter of the 5th HBT pipe Q6; The 3rd HBT pipe Q4 emitter connects the output VB of feed biasing circuit; For when strong signal is inputted, for input cascode level input HBT pipe Q1, providing needed large base current.
Described radio frequency low-noise amplifier, it is control end linkloop filter the first output of the first current source IB1 of described feed biasing circuit, the control voltage of the first output output is V
ctl1, control end linkloop filter the second output of the second current source IB2, the control voltage V of the second output output
ctl2; Feedback resistance feed biasing circuit and diode feed biasing circuit are connected in parallel, one and interface connection power vd D, another and interface connect the output VB of feed biasing circuit, the be connected in parallel output of feed biasing circuit of the 3rd HBT pipe Q4 emitter of the second resistance R b2 of feedback resistance feed biasing circuit and the parallel connection point of the 3rd resistance R bf and diode feed biasing circuit, output offset voltage is constant bias voltage V
b; For improving the linearity of feed biasing circuit.
Described radio frequency low-noise amplifier, it also is that described diode feed biasing circuit is comprised of the second current source IB2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 are the diode syndeton, grid and drain electrode short circuit; The drain electrode of the source electrode of the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 is connected in series, the source ground of the 5th metal-oxide-semiconductor M5; Wherein:
The second current source IB2 mono-end connects power vd D, also have a control end and an output, the control end of the second current source IB2 is connected with the second output of loop filter, the output of the second current source IB2 connects the 3rd metal-oxide-semiconductor M3 drain electrode and the 4th metal-oxide-semiconductor M4 drain electrode, the source ground of the 5th metal-oxide-semiconductor M5; The 3rd metal-oxide-semiconductor M3 source electrode connects the output VB of feed biasing circuit; For when strong signal is inputted, for input cascode level input HBT pipe Q1, providing needed large base current.
Described radio frequency low-noise amplifier, it also is in described feed biasing circuit, the Standard resistance range of the 3rd resistance R bf is 20K ~ 40K ohm; The bias current span of the 3rd HBT pipe Q4 is 2uA ~ 5uA; The 4th HBT pipe Q5, the 5th HBT pipe Q6 electric current are the twices of the electric current of the 3rd HBT pipe Q4, and their HBT pipe size is the twice of the 3rd HBT pipe Q4 size.
Described radio frequency low-noise amplifier, it also is in described feed biasing circuit, the Standard resistance range of the 3rd resistance R bf is 20K ~ 40K ohm; The On The Current Value scope of the 3rd metal-oxide-semiconductor M3 is 2uA ~ 5uA; The 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5 are the twices of the electric current of the 3rd metal-oxide-semiconductor M3, and their metal-oxide-semiconductor size is the twice of the 3rd metal-oxide-semiconductor M3 size.
The input cascode level of the radio frequency low-noise amplifier of high linearity is converted into current signal by the voltage signal of rf inputs RFin input, and low-noise performance is provided simultaneously; The current signal that the common grid level of output will be inputted the generation of cascode level is sent to the load output matching network and produces output voltage signal at output RFout; The load output matching network is that resonant load improves gain, guarantees the output impedance coupling simultaneously.
In the feed biasing circuit, increase a feedback resistance Rbf who is connected across between offset and input cascode level input pipe base stage than prior art resistance feed biasing circuit, reduce the low frequency input impedance of feed biasing circuit, thereby improve the linearity.Increase a diode feed biasing circuit, the feed path, when large-signal is inputted, for input cascode level input pipe provides required large base current, weakens the pressure drop effect on feedback resistance Rb2, thereby has guaranteed the constant of input pipe base voltage.
By the charge pump feedback control loop, dynamic base voltage biasing is provided to input cascode level input pipe.When radio-frequency input signals hour, the charge pump feedback control loop contribute, the feed biasing circuit works; When radio-frequency input signals is larger, the feedback regulation by the charge pump feedback control loop makes the current source in the feed biasing circuit become large, offset the impact that causes the input pipe base voltage to diminish due to large-signal, thereby it is constant to maintain the input pipe base voltage.The charge pump feedback control loop now detects the function of output signal power size, and charge pump produces and controls voltage according to the power detection result, and this control voltage is constant to maintain the input pipe base bias voltage by the size of regulating controllable current source.
Output is total to the metal-oxide-semiconductor and the metal-oxide-semiconductor parallel with one another connection that be operated in sub-threshold region of grid level work in saturation region, the metal-oxide-semiconductor that utilization is operated in sub-threshold region compensates the metal-oxide-semiconductor that is operated in saturation region, reduce its third order intermodulation amount, improve the output linearity of grid level altogether, and then improve the linearity of whole low noise amplifier.
The low noise amplifier of a kind of high linearity of the present invention, input cascode level and output grid level altogether adopt the HBT-MOSFET tubular construction, input pipe adopts the HBT pipe, take full advantage of MOSFET pipeline degree preferably characteristics improve the linearity, in order to obtain good low-noise performance, offset side at input pipe connects high linear bias circuit simultaneously, high linear bias circuit is comprised of charge pump loop and feed biasing circuit, the feed biasing circuit adopts resistance and diode feed bias combination structure, provide larger base current for input pipe when strong signal input, reducing of compensation input pipe base-emitter voltage, when small-signal is inputted, the normal operation of feed biasing circuit, thus obtain constant bias voltage V
b, significantly improve the linearity of low noise amplifier.Low noise amplifier of the present invention has been realized noise matching and power match in input stage, has greatly improved the linearity when guaranteeing low-noise performance, and has realized that monolithic is integrated.
The invention has the beneficial effects as follows:
1, the present invention is based on the resistance feed biasing circuit of prior art, adopt the charge pump feedback control loop to provide dynamic base bias voltage to input pipe, under the prerequisite that keeps noiseproof feature, the 1dB compression point can improve 6 ~ 8dB.
2, feed biasing circuit of the present invention adopts the biasing of feedback resistance feed and diode feed bias combination circuit structure, can effectively suppress the decline of input pipe base bias voltage when strong signal input, significantly improve linearity performance, the 1dB compression point improves 3 ~ 5dB, noiseproof feature is also had no significant effect simultaneously.
3, the radio frequency low-noise amplifier of high linearity of the present invention realizes that monolithic is integrated, and when keeping the prior art low-noise performance, the improvement of 1dB compression point reaches 11.27dBm, greatly improves the linearity of low noise amplifier.
The accompanying drawing explanation
Fig. 1 is the amplifier circuit in low noise schematic diagram that prior art adopts traditional resistance feed bias structure.
The low noise amplifier that Fig. 2 is high linearity of the present invention forms the schematic block circuit diagram of structure;
In Fig. 2,21-input cascode level, 22-output is the grid level altogether, 23-high linear bias circuit, 231-charge pump feedback control loop, 232-feed biasing circuit, 24-load output matching network, RFni-input signal end, RFout-output signal end, VB-bias voltage V
boutput.
The high linear bias circuit that Fig. 3 is the embodiment of the present invention forms electric theory diagram;
In Fig. 3,3-high linear bias circuit, 31-charge pump feedback control loop, 311-power-sensing circuit, 312-charge pump, the 313-the first low pass filter, the 314-the second low pass filter, 32-feed biasing circuit, 321-feedback resistance feed biasing circuit, 321-diode feed biasing circuit, Vctl1-first controls voltage, and Vctl2-second controls voltage.
The circuit diagram of the radio frequency low-noise amplifier of the high linearity that Fig. 4 a is first embodiment of the invention;
The circuit diagram of the radio frequency low-noise amplifier of the high linearity that Fig. 4 b is second embodiment of the invention;
In Fig. 4 a and Fig. 4 b, 41-input cascode level, 42-output is the grid level altogether, 43-load output matching network, 44-high linear bias circuit, 45-charge pump feedback control loop, the 451-the first low pass filter LPF1, the 452-the second low pass filter LPF2,46-feed biasing circuit, 461-feedback resistance feed biasing circuit, 462,463-diode feed biasing circuit, V
bthe bias voltage of-output, V
b2-outside input the first bias voltage, V
b3-outside input the second bias voltage, Vctl1-first exports direct-current control voltage, and Vctl2-second exports direct-current control voltage.
The linearity schematic diagram that Fig. 5 a is prior art tradition low noise amplifier;
The linearity contrast schematic diagram that Fig. 5 b is low noise of the present invention, high linearity low noise amplifier and traditional low noise amplifier.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, technical scheme of the present invention is described in further detail.
The circuit of radio frequency low-noise amplifier that Fig. 2 provides the high linearity of the embodiment of the present invention forms block diagram, and this low noise amplifier comprises: input cascode level 21, output is grid level 22, high linear bias circuit 23 and load output matching network 24 4 parts altogether.Form block diagram as shown in Figure 2, input signal enters the input RFin of input cascode level 21, input cascode level 21 outputs connect the output input of grid level 22 altogether, output is a be connected in parallel end of load output matching network 24 of grid level 22 outputs altogether, this output be connected in parallel output RFout that grid level 22 outputs are low noise amplifier altogether, the other end of load output matching network 24 connects power vd D.High linear bias circuit 23 is comprised of charge pump feedback control loop 231 and feed biasing circuit 232, and two control ends of charge pump feedback control loop 231 are connected respectively two current controling ends of feed biasing circuit 232.The input of charge pump feedback control loop 231 connects the output RFout of low noise amplifier, the output of feed biasing circuit 232 connects the offset side VB of input cascode level 21, and high linear bias circuit 23 provides the constant bias voltage V of high linearity for inputting cascode level 21
b.
Fig. 3 is that the high linear bias circuit in the low noise amplifier of embodiment of the present invention high linearity forms block diagram.As shown in Figure 3, high linear bias circuit 3 comprises charge pump feedback control loop 31 and feed biasing circuit 32, wherein charge pump feedback control loop 31 is comprised of power-sensing circuit 311, charge pump 312 and loop filter 313, and loop filter 313 comprises the first low pass filter 313a and the second low pass filter 313b.Feed biasing circuit 32 comprises feedback resistance feed biasing circuit 321 and diode feed biasing circuit 322.Power-sensing circuit 311 detects the average power size of radio frequency low-noise amplifier output signal, and output logic control signal, control injection and the extraction of electric current in charge pump 312, and produce two-way output direct-current control voltage after the first low pass filter 313a by loop filter 313 and the second low pass filter 313b filtering, first via output current source is controlled voltage Vctl1, and the second road output current source is controlled voltage Vctl2.The current source size in feedback resistance feed biasing circuit and diode feed biasing circuit is controlled respectively and regulated to this two-way direct-current control voltage, and then regulate the size of input pipe base bias voltage VB.
The first embodiment
Fig. 4 a and Fig. 4 b provide the circuit diagram of radio frequency low-noise amplifier of the high linearity of the first embodiment of the present invention and the second embodiment.As shown in Figure 4, the radio frequency low-noise amplifier of high linearity mainly comprises input cascode level 41, output four parts of grid level 42, load output matching network 43 and high linear bias circuit 44 altogether.Input cascode level 41 is converted into current signal by the radio frequency input voltage signal, and low-noise performance is provided simultaneously; The output current signal that altogether grid level 42 will input 41 outputs of cascode level is added to load output matching network 43, and in the output impedance coupling, resonant load obtains high-gain, and produces at output RFout the voltage signal of exporting through low noise amplification.High linear bias circuit 44 provides constant bias voltage V for the input pipe of input cascode level
b, greatly improve the linearity of whole low noise amplifier when guaranteeing to provide low-noise performance.
Described input cascode level 41 is comprised of input capacitance C1, input series connection inductance L b, input HBT pipe Q1 and emitter-base bandgap grading series inductance Le.Radio-frequency input signals is the end input through capacitance C1 by rf inputs RFin, capacitance C1 is connected in series with the input inductance L b that connects, the base stage of the connected HBT pipe of the other end Q1 of input series connection inductance L b, HBT pipe Q1 emitter is connected with the end of series inductance Le, HBT pipe Q1 collector electrode connects the source electrode that output is total to grid level M1 pipe and M2 pipe, the other end ground connection of series inductance Le.
Described output grid level 42 altogether consists of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2, source-source electrode of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 and leakage-connection parallel with one another drains, the first metal-oxide-semiconductor M1 is biased to operate in saturation region, and the second metal-oxide-semiconductor M2 is biased to operate in sub-threshold region.The source electrode of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 is connected with the collector electrode of input HBT pipe Q1 in input cascode level 41, forms the HBT-MOSFET tubular construction, obtains good low noise and linearity performance.The grid of the first metal-oxide-semiconductor M1 connects outside fixed bias voltage V
b2, the grid of the second metal-oxide-semiconductor M2 connects outside fixed bias voltage V
b3, the drain electrode of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 also meets the load output NZ that end is connected load output matching network 43.The output current signal feed-in load output matching network 43 that grid level 42 will flow into from input common emitter 41 altogether, and export the NZ end through output matching capacitor C 2 in load, output voltage signal is delivered to the output RFout of the low noise amplifier of high linearity.
Described load output matching network 43 comprises load inductance Ld, resonant capacitance C, load resistance R and output matching capacitor C 2.Load inductance Ld, resonant capacitance C and load resistance R are connected in parallel, a parallel end connection is to power vd D, another parallel connected end is connected with the M1 drain electrode, and output matching capacitor C 2 one ends connect load output NZ end, and the other end connects low noise amplifier signal output part RFout.Load inductance Ld and resonance capacitor C resonance are at the operating frequency point, and load resistance R, for reducing the Q value of resonant network, increases bandwidth.Output matching capacitor C 2 provides 50 ohmage outputs jointly with resonant network.
Described high linearity biasing circuit 44 comprises charge pump feedback control loop 45 and feed biasing circuit 46, is used to the input HBT pipe Q1 of input common emitter 41 that dynamic base bias voltage V is provided
b.The power-sensing circuit 311 of charge pump feedback control loop 45 detects the watt level of low noise amplifier output RFout output signal, and the control logic voltage signal of generation is delivered to the input of charge pump 312, charge pump 312 is converted to two by the control logic voltage signal of input and controls current signal, control the input that the current signal correspondence is delivered to the first low pass filter 451 and the second low pass filter 452 for two, first low-noise filter 451 output the first current sources are controlled voltage V
ctl1, second low-noise filter 452 output the second current sources are controlled voltage V
ctl2, two road current sources are controlled voltage V
ctl1and V
ctl2regulate respectively the size of the first current source IB1 and the second current source IB2 in feed biasing circuit 46, and then regulate the base bias voltage V that high linear bias circuit 44 output VB are added in input cascode level HBT pipe Q1
b.
Charge pump feedback control loop 45 is comprised of power-sensing circuit 311, charge pump 312, the first low pass filter 451 and the second low pass filter 452.Power-sensing circuit 311 is saturation region RMS wave detector, its input connects radio frequency low-noise amplifier output RFout, power-sensing circuit 311 detects the average power size of radio frequency low-noise amplifier output signal, and the formation logic control signal offers charge pump 312.Charge pump 312 changes logic control signal into the two-way voltage control signal, and two-way is controlled the information that comprises output RFout radio frequency output signal power size in voltage signal.Two-way current controling signal correspondence is sent the first low pass filter 451 and the logical acoustic filter 452 of the second low noise, filtering high frequency clutter, and output two-way current source control signal: first controls voltage V
ctl1with the second control voltage V
ctl2.The logic control signal that charge pump feedback control loop 45 produces according to power-sensing circuit 311, control voltage V through first of loop filter output
ctl1with the second control voltage V
ctl2control is to current source iunjected charge or the extraction electric charge of feed biasing circuit, and the size of control iunjected charge or extraction electric charge.Loop filter 45 is comprised of the first low pass filter LPF1 and the second low pass filter LPF2, and the high frequency clutter of the current signal produced for the filtering charge pump produces the corresponding voltage signal of controlling.The first low pass filter LPF1 and the second low pass filter LPF2 respectively have an output, and be used to feed biasing circuit 46 to provide two-way to control voltage: first controls voltage V
ctl1with the second control voltage V
ctl2.The output of the first low pass filter 451 connects the control end of current source IB1 in feedback resistance feed biasing circuit 461, and the output of the second low pass filter 452 connects the control end of current source IB2 in diode feed biasing circuit 462.
When the input signal of radiofrequency signal input RFin end hour, electricity input cascode level and output altogether the grid level work at linear zone, charge pump feedback control loop 45 and 46 normal operations of feed biasing circuit, contribution is for outstanding.When the input signal of radiofrequency signal input RFin end is larger, it is larger that power-sensing circuit 311 detects output RFout radio frequency output signal power, the logic control signal produced increases, and charge pump 312 changes electric current into and controls voltage V through low pass filter filtered first
ctl1with the second control voltage V
ctl2also increase, by the feedback regulation effect of charge pump feedback control loop 45, make the electric current of the first current source IB1, the second current source IB2 that flow through in feed biasing circuit 46 become large, at high linear bias circuit output end VB, contribute as higher bias voltage V
bthereby, offset the impact that causes input pipe Q1 base voltage to descend because of the large-signal input, make to be added in input pipe Q1 base voltage and remain unchanged.
Feed biasing circuit 46 comprises feedback resistance feed biasing circuit 461 and diode feed biasing circuit 462, is used to input HBT pipe Q1 that base bias voltage V is provided
b.Feedback resistance feed biasing circuit 461 is by the first current source IB1, and a HBT pipe Q2, the 2nd HBT manage Q3, and the first resistance R b1, the second resistance R b2 and the 3rd resistance R bf form.Wherein, the input of the first current source IB1 connects power vd D, the control end of the first current source IB1 connects the output of the first low pass filter, the output of the first current source IB1 connects the collector electrode of a HBT pipe Q2, the one HBT pipe Q2 collector electrode is connected with the 2nd HBT pipe Q3 base stage, access the first resistance R b1 between the one HBT pipe Q2 base stage and the 2nd HBT pipe Q3 emitter, a HBT pipe Q2 grounded emitter.The 2nd HBT pipe Q3 collector electrode meets power vd D, the 2nd HBT pipe Q3 emitter is connected with input HBT pipe Q1 base stage by the second resistance R b2, the 3rd resistance R bf is connected across between a HBT pipe Q2 base stage and feed biasing circuit 46 output VB, output VB is connected to the base stage of input cascode level HBT pipe Q1, manage the equivalent input impedance of the base bias circuit of Q1 for reducing input cascode level HBT, effectively suppress the reduction of input HBT pipe Q1 base voltage when strong signal input, thereby improve the linearity of low noise amplifier.
Diode feed biasing circuit 462 is by the second current source IB2, and the 3rd HBT pipe Q4, the 4th HBT pipe Q5, the 5th HBT pipe Q6 form.Wherein, the second current source IB2 input connects power vd D, and the control end of the second current source IB2 is connected with the output of the second low pass filter 452, and the output of the second current source IB2 connects the 3rd HBT pipe Q4 collector electrode and the 4th HBT pipe Q5 collector electrode; The base stage that Q4 pipe, Q5 and pipe Q6 pipe adopt diode to be connected-collector electrode Parallel connection structure, the 5th HBT pipe Q6 grounded emitter, the 4th HBT pipe Q5 emitter is connected with the 5th HBT pipe Q6 collector electrode, the 3rd HBT pipe Q4 collector electrode is connected with the 4th HBT pipe Q5 collector electrode, and the 3rd HBT pipe Q4 emitter connects input HBT pipe Q1 base stage; For when strong signal is inputted, for input HBT pipe Q1, providing needed large base current.At input RFin input signal hour, the electric current that flows through the 3rd HBT pipe Q4 branch road is less, hardly the noiseproof feature of impact input cascode level HBT pipe Q1; When input RFin input signal is very strong, the electric current that flows through the 3rd HBT pipe Q4 branch road also increases additionally to provide the required large base current of input cascode level HBT pipe Q1, make electric current and the voltage drop of flowing through the second resistance R b2 less, thereby the base voltage that has suppressed input HBT pipe Q1 descends, make the base voltage VB of input HBT pipe Q1 under large-signal keep constant.
Manage by size and the 3rd HBT pipe Q4, the 4th HBT that regulates the 3rd resistance R bf the size that Q5, the 5th HBT manage Q6, make whole low noise amplifier that the sufficiently high linearity is provided when thering is low-noise performance.The value of the 3rd resistance R bf is considered with the requirement compromise that takes into account noise factor according to improving the linearity, the resistance of the 3rd resistance R bf is the twice left and right of the second resistance R b2 normally, the span of the second resistance R b2 is 10K ~ 20K ohm, and the Standard resistance range of the 3rd resistance R bf is 20K ~ 40K ohm.The On The Current Value of the 3rd HBT pipe Q4 is related to the linearity and noise factor, and the 3rd HBT pipe Q4 On The Current Value is 2uA ~ 5uA; The 4th HBT pipe Q5, the 5th HBT pipe Q6 electric current are the twices of the electric current of the 3rd HBT pipe Q4, and their size is the twice of the 3rd HBT pipe Q4 size.
The second embodiment
The first embodiment circuit shown in the second embodiment circuit shown in Fig. 4 b and Fig. 4 a is basic identical, two embodiment differences are that described diode feed biasing circuit is comprised of the second current source IB2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 are the diode syndeton, i.e. their grid and drain electrode short circuit.The drain electrode of the source electrode of the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 is connected in series, the source ground of the 5th metal-oxide-semiconductor M5.
The output of the second current source IB2 connects the 3rd metal-oxide-semiconductor M3 drain electrode and the 4th metal-oxide-semiconductor M4 drain electrode, the source ground of the 5th metal-oxide-semiconductor M5; The output of diode feed biasing circuit 462 i.e. the output VB of the 3rd metal-oxide-semiconductor M3 source electrode connection feed biasing circuit, the output of feedback resistance feed biasing circuit 461 also is connected to the output VB of feed biasing circuit, the output VB of feed biasing circuit connects the base stage of input cascode level HBT pipe Q1, for when strong signal is inputted, for input cascode level input HBT pipe Q1, providing needed large base current.
The size of size by regulating the 3rd resistance R bf and the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, make whole low noise amplifier that the sufficiently high linearity is provided when having low-noise performance.The value of the 3rd resistance R bf is considered with the requirement compromise that takes into account noise factor according to improving the linearity, the resistance of the 3rd resistance R bf is the twice left and right of the second resistance R b2 normally, the span of the second resistance R b2 is 10K ~ 20K ohm, and the Standard resistance range of the 3rd resistance R bf is 20K ~ 40K ohm.The On The Current Value of the 3rd metal-oxide-semiconductor M3 is related to the linearity and noise factor, and the 3rd metal-oxide-semiconductor M3 On The Current Value is 2uA ~ 5uA; The 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5 electric current are the twices of the electric current of the 3rd metal-oxide-semiconductor M3, and their size is the twice of the 3rd metal-oxide-semiconductor M3 size.
Fig. 5 a and Fig. 5 b illustrate respectively the performance curve of the input 1dB compression point ICP1 of prior art low noise amplifier and high linearity radio frequency low-noise amplifier of the present invention.Power output while usually dropping to gain than the low 1dB of linear gain is defined as the 1dB compression point of power output.Input 1dB compression point ICP1 is the performance parameter of power output, and compression point is higher, means that power output is higher.Also by the 1dB compression point, describe the linear dynamic range of amplifier, in this scope, the power output of amplifier increases with input power is linear.The parameter that means linearity performance by the 1dB compression point, the ICP1 value is higher, means that the linearity is better, and distorted signals is less.By emulation experiment, data are depicted as to the performance curve of the input 1dB compression point ICP1 of the radio frequency low-noise amplifier of high linearity of the present invention and prior art low noise amplifier.Simulation comparison experiment shows: the present invention compares with the resistance feed biasing circuit of prior art, adopts the charge pump feedback control loop to provide dynamic base bias voltage to input pipe, and under the prerequisite that keeps noiseproof feature, the 1dB compression point can improve 6 ~ 8dB; Feed biasing circuit of the present invention adopts the biasing of feedback resistance feed and diode feed bias combination circuit structure, can effectively suppress the decline of input pipe base bias voltage when strong signal input, significantly improve linearity performance, the 1dB compression point improves 3 ~ 5dB, noiseproof feature is also had no significant effect simultaneously.Easily draw noise factor NF, input 1dB compression point ICP1 and three performance correction datas of current sinking of radio frequency low-noise amplifier and the prior art low noise amplifier of high linearity of the present invention according to Fig. 5 a and Fig. 5 b curve, correction data is listed in table 1.
Table 1
| Comparison Circuit comparative run | Noise factor NF | Input 1dB compression point ICP1 | Current sinking |
| Low noise amplifier of the present invention | 0.91dB | -9.33dBm | 3.70mA |
| The prior art low noise amplifier | 0.90dB | -20.60dBm | 3.70mA |
As can be seen from Table 1, the noise factor NF of the radio frequency low-noise amplifier of high linearity of the present invention is suitable with the prior art low noise amplifier for those skilled in the art, is the 0.9dB left and right; Current sinking is 3.7mA.And input 1dB compression point ICP1 performance from the prior art low noise amplifier-be increased to-9.33dBm of 20.6dBm, added value reaches 11.27dBm, it is considerable that low noise amplifier of the present invention improves the effect of the linearity.Above-mentioned comparative result has been verified under the prerequisite of technical scheme identical low-noise factor in assurance that the present invention takes, improve significantly the linearity of low noise amplifier, made radio frequency low-noise amplifier of the present invention there is low-noise performance and high linearity performance simultaneously.
It will be understood by those skilled in the art that, under the prerequisite that does not deviate from broad scope of the present invention, above-described embodiment is made to some changes.Thereby the present invention is not limited in disclosed specific embodiment.Its scope should contain core of the present invention and the interior all changes of protection range that appended claims limits.
Claims (10)
1. the radio frequency low-noise amplifier of a high linearity, comprise input cascode level, output grid level, load output matching network and biasing circuit altogether, and it is characterized in that: biasing circuit is high linear bias circuit;
Described high linear bias circuit comprises a charge pump feedback control loop and a feed biasing circuit; The input of charge pump feedback control loop connects the output signal end RFout of load output matching network, controls two control ends that voltage output end connects the feed biasing circuit for two of the charge pump feedback control loop; The output VB of feed biasing circuit connects the biased electrical pressure side of input cascode level; High linear bias circuit is used to input cascode level HBT pipe base bias voltage end that bias voltage V is provided
b, the charge pump feedback control loop detects the watt level of load output matching network output signal end RFout output signal, and generates the dynamic output current source control voltage Vctl1 of two-way and V
ctl2, output current source is controlled voltage Vctl1 and V
ctl2the corresponding control end connected in two feed biasing circuits, for regulating the size of current of two current source IB1 of feed biasing circuit and B2, and then regulate the bias voltage V that the feed biasing circuit is exported separately
b, for input cascode level base stage provides dynamic, stable bias voltage V
b, realization improves the linearity of low noise amplifier, guarantees the low-noise performance of low noise amplifier simultaneously.
2. radio frequency low-noise amplifier according to claim 1, it is characterized in that: described charge pump feedback control loop consists of power-sensing circuit, charge pump and loop filter; Wherein
Described power-sensing circuit is saturation region root mean square RMS wave detector, its input connects radio frequency low-noise amplifier output RFout, its output connects the control end of charge pump, for detection of the average power size of radio frequency low-noise amplifier output signal, for charge pump provides logic control signal;
Described charge pump is two balanced balanced current charging-discharging structures, convert corresponding two-way error signal output to for the logic control voltage signal that power-sensing circuit is produced, the information of the watt level that this two-way error signal comprises the radio frequency output signal, the input of two low pass filters of the corresponding linkloop filter of the two-way output of charge pump;
Described loop filter is comprised of the first low pass filter LPF1 and the second low pass filter LPF2, the first low pass filter LPF1 and the second low pass filter LPF2 respectively have an input and an output, corresponding first current output terminal that connects charge pump of the input of the first low pass filter LPF1, corresponding second current output terminal that connects charge pump of the input of the second low pass filter LPF2, loop filter is for the high frequency clutter of the current signal of filtering charge pump output, the control voltage signal of two direct currents of corresponding generation, the output of the first low pass filter LPF1 is controlled voltage Vctl1 for the feed biasing circuit provides first via output current source, the output of the second low pass filter LPF2 is controlled voltage Vctl2 for the feed biasing circuit provides the second road output current source.
3. radio frequency low-noise amplifier according to claim 1, it is characterized in that: described feed biasing circuit comprises feedback resistance feed biasing circuit and diode feed biasing circuit, and the circuit structure of feed biasing circuit is for to be combined by two feed biasing circuits; Feedback resistance feed biasing circuit power end all is connected power vd D with diode feed biasing circuit power end, feedback resistance feed biasing circuit output and diode feed biasing circuit output tie point are the VB end, feedback resistance feed bias circuit controls end connects the first low pass filter output of charge pump feedback control loop, diode feed bias circuit controls end connects the second low pass filter output of charge pump feedback control loop, and the feed biasing circuit is used to input cascode level input HBT pipe base stage that constant bias voltage V is provided
b.
4. radio frequency low-noise amplifier according to claim 3, it is characterized in that: described feedback resistance feed biasing circuit is comprised of the first current source IB1, a HBT pipe Q2, the 2nd HBT pipe Q3, the first feedback resistance Rb1, the second feedback resistance Rb2 and the 3rd feedback resistance Rbf, and the output of feedback resistance feed biasing circuit is the VB end; Wherein:
The first current source IB1 mono-end connects power vd D, also have a control end and an output, the control end of the first current source IB1 is connected with the first output of loop filter, and the output of the first current source IB1 connects the collector electrode of a HBT pipe Q2 and the base stage of the 2nd HBT pipe Q3;
The one HBT pipe Q2 base stage is connected by the first feedback resistance Rb1 with the 2nd HBT pipe Q3 emitter, the grounded emitter of the one HBT pipe Q2, the 2nd HBT pipe Q3 collector electrode meets power vd D, the 2nd HBT pipe Q3 emitter is connected with the base stage of input cascode level input HBT pipe Q1 by the second feedback resistance Rb2, and the 3rd feedback resistance Rbf is connected across between a HBT pipe Q2 base stage and input cascode level input HBT pipe Q1 base stage; The output of feedback resistance feed biasing circuit and diode feed biasing circuit output are attempted by the VB end; For reducing the equivalent input impedance of the VB of feed biasing circuit end, to reduce the input HBT pipe Q1 base voltage that strong signal input causes, reduce, make bias voltage V
bconstant.
5. radio frequency low-noise amplifier according to claim 3, it is characterized in that: described diode feed biasing circuit is comprised of the second current source IB2, the 3rd HBT pipe Q4, the 4th HBT pipe Q5 and the 5th HBT pipe Q6, and the output of diode feed biasing circuit is the VB end; The 3rd HBT pipe Q4, the 4th HBT pipe Q5 and the 5th HBT pipe Q6 are the diode syndeton, collector electrode and base stage short circuit; The collector electrode of the emitter of the 4th HBT pipe Q5 and the 5th HBT pipe Q6 is connected in series; Wherein:
The second current source IB2 mono-end connects power vd D, also have a control end and an output, the control end of the second current source IB2 is connected with the second output of loop filter, the output of the second current source IB2 connects the 3rd HBT pipe Q4 collector electrode and the 4th HBT pipe Q5 collector electrode, the grounded emitter of the 5th HBT pipe Q6; The 3rd HBT pipe Q4 emitter connects the output VB of feed biasing circuit; For when strong signal is inputted, for input cascode level input HBT pipe Q1, providing needed large base current.
6. radio frequency low-noise amplifier according to claim 3 is characterized in that: control end linkloop filter the first output of the first current source IB1 of described feed biasing circuit, first via output direct-current control voltage is V
ctl1, control end linkloop filter the second output of the second current source IB2, the second tunnel output direct-current control voltage is V
ctl2; Feedback resistance feed biasing circuit and diode feed biasing circuit are connected in parallel, one and interface connection power vd D, another and interface connect the output VB of feed biasing circuit, the be connected in parallel output of feed biasing circuit of the 3rd HBT pipe Q4 emitter of the second resistance R b2 of feedback resistance feed biasing circuit and the parallel connection point of the 3rd resistance R bf and diode feed biasing circuit, output offset voltage is constant bias voltage V
b; For improving the linearity of feed biasing circuit.
7. according to the described radio frequency low-noise amplifier of claim 4 or 5, it is characterized in that: control end linkloop filter the first output of the first current source IB1 of described feed biasing circuit, first via output direct-current control voltage is V
ctl1, control end linkloop filter the second output of the second current source IB2, the second tunnel output direct-current control voltage is V
ctl2; Feedback resistance feed biasing circuit and diode feed biasing circuit are connected in parallel, one and interface connection power vd D, another and interface connect the output VB of feed biasing circuit, the be connected in parallel output of feed biasing circuit of the 3rd HBT pipe Q4 emitter of the second resistance R b2 of feedback resistance feed biasing circuit and the parallel connection point of the 3rd resistance R bf and diode feed biasing circuit, output offset voltage is constant bias voltage V
b; For improving the linearity of feed biasing circuit.
8. according to claim 3 or 5 or 6 described radio frequency low-noise amplifiers, be further characterized in that: described diode feed biasing circuit is comprised of the second current source IB2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 are the diode syndeton, grid and drain electrode short circuit; The drain electrode of the source electrode of the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 is connected in series, the source ground of the 5th metal-oxide-semiconductor M5; Wherein:
The second current source IB2 mono-end connects power vd D, also have a control end and an output, the control end of the second current source IB2 is connected with the second output of loop filter, the output of the second current source IB2 connects the 3rd metal-oxide-semiconductor M3 drain electrode and the 4th metal-oxide-semiconductor M4 drain electrode, the source ground of the 5th metal-oxide-semiconductor M5; The 3rd metal-oxide-semiconductor M3 source electrode connects the output VB of feed biasing circuit; For when strong signal is inputted, for input cascode level input HBT pipe Q1, providing needed large base current.
9. according to claim 3 or 5 or 6 described radio frequency low-noise amplifiers, be further characterized in that: in described feed biasing circuit, the Standard resistance range of the 3rd resistance R bf is 20K ~ 40K ohm; The bias current span of the 3rd HBT pipe Q4 is 2uA ~ 5uA; The 4th HBT pipe Q5, the 5th HBT pipe Q6 electric current are the twices of the electric current of the 3rd HBT pipe Q4, and their HBT pipe size is the twice of the 3rd HBT pipe Q4 size.
10. radio frequency low-noise amplifier according to claim 8, be further characterized in that: in described feed biasing circuit, the Standard resistance range of the 3rd resistance R bf is 20K ~ 40K ohm; The On The Current Value scope of the 3rd metal-oxide-semiconductor M3 is 2uA ~ 5uA; The 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5 are the twices of the electric current of the 3rd metal-oxide-semiconductor M3, and their metal-oxide-semiconductor size is the twice of the 3rd metal-oxide-semiconductor M3 size.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5914634A (en) * | 1997-09-17 | 1999-06-22 | Northern Telecom Limited | Multiple switchable input LNA with input impedance control |
| CN102394572A (en) * | 2011-10-14 | 2012-03-28 | 苏州中科半导体集成技术研发中心有限公司 | High-linearity low noise amplifier and design method thereof |
-
2013
- 2013-01-25 CN CN2013100332642A patent/CN103166581A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5914634A (en) * | 1997-09-17 | 1999-06-22 | Northern Telecom Limited | Multiple switchable input LNA with input impedance control |
| CN102394572A (en) * | 2011-10-14 | 2012-03-28 | 苏州中科半导体集成技术研发中心有限公司 | High-linearity low noise amplifier and design method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 徐化等: ""一种新型的5GHz自适应偏置及可变增益低噪声放大器"", 《电子与信息学报》, vol. 28, no. 8, 31 August 2006 (2006-08-31), pages 1521 - 1525 * |
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Application publication date: 20130619 |