CN106571780B - A kind of adaptive-biased radio-frequency power amplifier - Google Patents
A kind of adaptive-biased radio-frequency power amplifier Download PDFInfo
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- CN106571780B CN106571780B CN201611020276.1A CN201611020276A CN106571780B CN 106571780 B CN106571780 B CN 106571780B CN 201611020276 A CN201611020276 A CN 201611020276A CN 106571780 B CN106571780 B CN 106571780B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
This application discloses a kind of adaptive-biased radio-frequency power amplifiers, including biasing circuit and power stage amplifying circuit.The biasing circuit is used to provide dynamic bias voltage for the transistor two in power stage amplifying circuit；Operating voltage one connects one end of resistance one, output end of the other end of resistance one as biasing circuit；Operating voltage two connects the anode of diode one, the output end of the cathode connection biasing circuit of diode one；The value of operating voltage two makes diode one be defaulted as critical conduction mode.The power stage amplifying circuit includes transistor one and transistor two, using cascode structure；Transistor one uses common source connection, and grid receives radio-frequency input signals；Transistor two uses common gate connection, drain electrode output drain voltage two.This application provides adaptive bias voltages, delay gain compression, reduce the phase distortion generated due to nonlinear capacitance.
Description
Technical field
This application involves a kind of radio-frequency power amplifiers.
Background technique
Radio-frequency power amplifier (RF power amplifier) is a kind of electron-amplifier, for penetrating lower-wattage
Frequency signal is converted to higher-wattage.The typical case of radio-frequency power amplifier is for driving in transmitter (transmitter)
Antenna, i.e., brewed radiofrequency signal is amplified to antennas after required performance number and emitted.The design of radio-frequency power amplifier refers to
Mark generally include gain (gain), output power, bandwidth, efficiency (efficiency), the linearity (linearity), input and
Output impedance matches (impedance matching), calorific value etc..
The efficiency of radio-frequency power amplifier refers to that the dc power of power supply is converted to the energy of radio-frequency signal output power by it
Power.The power for not being converted to radio-frequency signal output power just becomes heat and comes out, therefore inefficient radio-frequency power
Amplifier is with regard to calorific value with higher.
The linearity of radio-frequency power amplifier refers to the linear relationship between its output power and input power.Ideal situation
Under, radio-frequency power amplifier only improves content of the power of input signal without changing signal, this requires radio-frequency power amplifier
Identical gain is kept in its working frequency range.However the gain of most of power amplification elements is all reduced as frequency increases,
Therefore it is unable to reach the ideal linearity.Using complex modulation mode radiofrequency signal for radio-frequency power amplifier the linearity
It is required that higher.
Modern radio-frequency power amplifier can use GaAs (GaAs) HBT (heterojunction bipolar
Transistor, heterojunction bipolar transistor), LDMOS (laterally diffused metal oxide
Semiconductor, lateral diffusion metal oxide semiconductor), CMOS (complementary metal-oxide-
Semiconductor, complementary metal oxide semiconductor) etc. be used as power amplification element.Wherein realized using cmos device
Radio-frequency power amplifier have the advantages that good compatibility, integrated level are high, at low cost, that there is also the linearities is low, pressure voltage is low
Disadvantage.Therefore how to realize that the radio-frequency power amplifier of high power, high efficiency and high linearity just becomes using cmos device
One is worth the project of research and development, and research and development difficult point essentially consists in the following aspects.
First, metal-oxide-semiconductor (metal-oxide-semiconductor field-effect transistor, metal oxidation
Object semiconductor field effect transistor) it is a kind of nonlinear device.Radio-frequency power amplifier, max line are realized using metal-oxide-semiconductor
Property output power (maximum linear output power) is smaller.
Referring to Fig. 1, this is gain-output power curve schematic diagram of single metal-oxide-semiconductor power amplifier.When single metal-oxide-semiconductor function
Rate amplifier works in A quasi-mode, and quiescent bias current is big, first generally remains stabilization with output power increase gain and then subtracts
It is small, as shown in curve A.The leading portion gain of curve A is substantially constant, referred to as small-signal gain (small-signal gain).Curve
The back segment gain of A increases with output power and is reduced, that is, gain compression (gain compression) has occurred.When single metal-oxide-semiconductor
Power amplifier works in AB quasi-mode, and quiescent bias current is small, may be as shown in curve A, it is also possible to as curveb.
Curve B indicates first to generally remain to stablize then to increase with output power increase gain to reduce afterwards again.The leading portion gain of curve B is substantially
Stablize, referred to as small-signal gain.The midrange gain of curve B increases with output power and is increased, that is, gain extension (gain has occurred
expansion).The back segment gain of curve B increases with output power and is reduced, that is, gain compression has occurred.It is higher in order to realize
The linearity and efficiency, AB quasi-mode, either curve A are usually operated at when metal-oxide-semiconductor is used as power amplification element still
The relationship of gain shown in curve B and output power always will appear gain compression when close to saturation output power, which has limited
The maximum linear output power of metal-oxide-semiconductor.
Second, single metal-oxide-semiconductor power amplifier has the shortcomings that the low linearity, low efficiency, maximum linear output power are small.For
These disadvantages are made up, cascade (cascode, also referred to as cascode are generallyd use using the radio-frequency power amplifier that metal-oxide-semiconductor is constituted
Cobasis) structure, as shown in Fig. 2, being divided into two-stage.First order metal-oxide-semiconductor uses common source (common source) connection, i.e. grid
Pole is used as signal input part as signal input part, drain electrode.Second level metal-oxide-semiconductor uses common gate (common gate) connection, i.e.,
Source electrode is used as signal output end as signal input part, drain electrode.The source electrode of the drain electrode connection second level metal-oxide-semiconductor of first order metal-oxide-semiconductor.
The radio-frequency power amplifier of this cascode structure can be improved operating voltage and then improve output power.There is provided input and it is defeated
Isolation between out, but efficiency is still relatively low, the linearity is also poor.
IEEE Microwave Magazine magazine (Volume) the 5th phase (issue) of volume 11 that in August, 2010 is published
There is an article " The Linearity-Efficiency Compromise ", author is Pedro M.Lavrador etc..This piece
The target that article is difficult to obtain high efficiency and high linearity simultaneously to radio-frequency power amplifier is analyzed, and to existing line
Property technology is described and analyzes.
The Chinese invention patent application that application publication number is CN104716905A, data of publication of application is on June 17th, 2015
In " a kind of cascade radio-frequency power amplifier that efficiency improves ", a kind of biasing of the amplifier of cascode structure is disclosed
Circuit.The biasing circuit is mainly by HEMT (High-electron-mobility transistor, high electron mobility crystal
Pipe) composition, output can be adjusted by control voltage to the bias voltage of transistor.The program is by introducing additional control electricity
Road adjusts the bias voltage of transistor, increases the complexity of circuit, improves power consumption.
The Chinese invention patent application that application publication number is CN104716910A, data of publication of application is on June 17th, 2015
In " cascode amplifier ", a kind of biasing circuit of the amplifier of cascode structure is disclosed.The biasing circuit is according to can
The supply voltage of change provides variable bias voltage into transistor.The program by from by way of supply voltage function representation to
Transistor provides bias voltage, similar adaptive bias mode, but the biasing circuit being related to is considerably complicated, thus greatly increases
The complexity of circuit.
The Chinese invention patent application that application publication number is CN105765858A, data of publication of application is on July 13rd, 2016
In " broadband biasing circuit and method ", a kind of biasing circuit of the amplifier of cascode structure is disclosed.Biasing circuit master
It to be made of resistance and capacitor, constant bias voltage can only be provided.The program, which focuses on, solves bias supply in certain bandwidth
In range when variation, transistor can still follow the variation of power supply to obtain suitable biasing, be not related to improve linear
The content of degree and efficiency.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of radio-frequency power amplifier, have high power, high efficiency with
The characteristics of high linearity.
In order to solve the above technical problems, this application provides a kind of adaptive-biased radio-frequency power amplifier, including it is inclined
Circuits and power stage amplifying circuit.
The biasing circuit includes diode one, resistance one and capacitor one, for for the crystal in power stage amplifying circuit
Pipe two provides dynamic bias voltage；Operating voltage one connects one end of resistance one, and the other end of resistance one is as biasing circuit
Output end；Operating voltage two connects the anode of diode one, the output end of the cathode connection biasing circuit of diode one；Biased electrical
The output end on road also passes through capacitor one and is grounded；The value of operating voltage two makes diode one be defaulted as critical conduction mode.
The power stage amplifying circuit includes transistor one and transistor two, using cascode structure；Transistor one is adopted
With common source connection, grid receives radio-frequency input signals；Transistor two uses common gate connection, drain electrode output drain voltage
Two.
Alternatively, the diode one in the biasing circuit is changed to transistor three.The grid of transistor three and drain electrode are shorted, phase
When in the anode of diode；The source electrode of transistor three is equivalent to the cathode of diode.Alternatively, operating voltage four connects transistor three
Grid, operating voltage five connect the drain electrode of transistor three, the output end of the source electrode connection biasing circuit of transistor three.Operating voltage two
Value or the value of operating voltage four and operating voltage five make transistor three be defaulted as critical conduction mode.
Further, described adaptive-biased to refer to: as the power of radio-frequency input signals increases, power stage amplifying circuit
The output signal voltage amplitude of oscillation increase with it, the coupled voltages amplitude of oscillation for being coupled to the grid of transistor two also increases with it；Straight
When stream biasing, diode one or transistor three are critical conduction mode；When the cathode of diode one or the source electrode of transistor three are folded
After adding coupled voltages, when diode one or transistor three switch to and the when of conducting and the state ended, diode one or transistor three
The DC component of electric current when conducting flows through resistance one, and it is folded to flow through pressure drop of the DC component of the electric current of resistance one on resistance one
Add operating voltage once constituting dynamic bias voltage provided by biasing circuit；Electricity when diode one or transistor three are connected
Levelling mean value increases as input power increases, and the average value of the dynamic bias voltage increases with it.
Radio-frequency power amplifier main innovation provided by the present application is biasing circuit, the biasing circuit and cascade knot
The power stage amplifying circuit of structure matches, and provides adaptive dynamic bias voltage for the transistor two of common gate connection.Crystal
The grid voltage of pipe two mainly consists of three parts: first is that the DC offset voltage i.e. operating voltage one that biasing circuit provides, two
It is the dynamic electric voltage for flowing through the dynamic current of resistance one and generating, third is that the drain voltage of transistor two is coupled to the exchange coupling of grid
Close voltage.It is adaptively embodied in: when the power of radio-frequency input signals is smaller, passing through diode one or the average electricity of transistor three
Stream is smaller, and the dynamic current for flowing through resistance one is also smaller, therefore the dynamic electric voltage formed on resistance one is smaller, and biasing circuit mentions
The dynamic bias voltage of confession is also smaller.When the power of radio-frequency input signals is larger, pass through the flat of diode one or transistor three
Equal electric current is larger, and the dynamic current for flowing through resistance one is also larger, therefore the dynamic electric voltage formed on resistance one is larger, biased electrical
The dynamic bias voltage that road provides is also larger, reduces the conducting resistance and conduction voltage drop of transistor two.The application provides as a result,
Radio-frequency power amplifier delay mainly serve power amplification transistor one gain compression, improve 1dB compression point
Corresponding output power, additionally it is possible to reduce the phase distortion that generates due to nonlinear capacitance, be finally reached high power, efficiently
The design object of rate and high linearity.
Detailed description of the invention
Fig. 1 is gain-output power curve schematic diagram of single metal-oxide-semiconductor power amplifier.
Fig. 2 is the structural schematic diagram of the radio-frequency power amplifier of cascode structure.
Fig. 3 is the structural schematic diagram of the embodiment one of radio-frequency power amplifier provided by the present application.
Fig. 3 a is a kind of distressed structure schematic diagram of embodiments herein one.
Fig. 4 is the operation principle schematic diagram of embodiments herein one.
Fig. 5 a, Fig. 5 b are the grid voltage of transistor two, gain and output power in embodiments herein one respectively
Curve synoptic diagram.
Fig. 6 is the structural schematic diagram of the embodiment two of radio-frequency power amplifier provided by the present application.
Fig. 7 is the structural schematic diagram of the embodiment three of radio-frequency power amplifier provided by the present application.
Fig. 8 is the structural schematic diagram of the example IV of radio-frequency power amplifier provided by the present application.
Description of symbols in figure: VB2 is operating voltage one；VB22 is operating voltage two；VDD is operating voltage three；
VBM3 is operating voltage four；VD3 is operating voltage five；RFin is radio-frequency input signals；RFout is radio frequency output signal；R is electricity
Resistance；C is capacitor；L is inductance；D is diode；M is transistor；VG is grid voltage；VD is drain voltage.
Specific embodiment
Referring to Fig. 3, this is the embodiment one of radio-frequency power amplifier provided by the present application.The radio-frequency power amplifier
Including biasing circuit and power stage amplifying circuit.To clearly describe, match circuit is also schematically shown in Fig. 3.
The biasing circuit includes one C1 of one R1 of resistance, one D1 of diode and capacitor, is used to as in power stage amplifying circuit
Two M2 of transistor provide dynamic bias voltage.One end of one VB2 connection resistance of operating voltage, one R1, the other end of one R1 of resistance
Output end as biasing circuit provides dynamic bias voltage for two M2 of transistor.The dynamic bias voltage includes static work
One VB2 of voltage and the dynamic electric voltage of the dynamic current generation by one R1 of resistance, the dynamic current, which refers to, flows through resistance one
The DC component of the electric current of R1.The grid voltage VG2 of two M2 of transistor is then the dynamic bias voltage provided in biasing circuit
On the basis of increase by two M2 of transistor grid from drain electrode coupling come coupled voltages.Two VB22 connection diode of operating voltage, one D1
Anode, one D1 of diode cathode connection biasing circuit output end.The output end of biasing circuit also passes through one C1 of capacitor and connects
Ground.One VB2 of operating voltage and two VB22 of operating voltage are kept constant, and it is defeated that the value of two VB22 of operating voltage is approximately equal to no radio frequency
The sum of the threshold voltage of the grid voltage VG2 of two M2 of transistor and one D1 of diode when entering signal RFin.Therefore in no radio frequency
When input signal RFin, one D1 of diode is in critical conduction mode, the i.e. critical state in cut-off with conducting.
The power stage amplifying circuit includes two M2 of one M1 of transistor and transistor, using cascode structure.Transistor
One M1 uses common source connection, source electrode ground connection, and grid receives radio frequency input letter as the input terminal of power stage amplifying circuit
Number RFin, drain electrode export one VD1 of drain voltage to the source electrode of two M2 of transistor.Two M2 of transistor uses common gate connection,
Grid receives the dynamic bias voltage of biasing circuit output, the drain voltage one of the drain electrode output of one M1 of source electrode receiving crystal pipe
VD1 drains and externally exports two VD2 of drain voltage as the output end of power stage amplifying circuit.The transistor can use
The devices such as field effect transistor (FET), bipolar junction transistor (BJT).One M1 of transistor work in AB quasi-mode, rise it is main across
Lead amplification.The output loading of two M2 of transistor and radio-frequency power amplifier integrally can be regarded as being superimposed upon transistor one
A load on M1, for sharing the operating voltage of one M1 of transistor under the high-power amplitude of oscillation, avoids each transistor breakdown.
Two M2 of transistor has the function of voltage amplification simultaneously, improves the power gain of radio-frequency power amplifier.In DC static biased electrical
Under pressure effect, one M1 of transistor and two M2 of transistor are biased in saturation region if it is field effect transistor, if it is ambipolar
Transistor is biased in linear zone, and the saturation region of field effect transistor or the linear zone of bipolar junction transistor may be collectively referred to as high increasing
Beneficial magnifying state.
The match circuit is output matching network, and two VD2 of drain voltage that power stage amplifying circuit exports is hindered
Anti- matching obtains radio frequency output signal RFout.Three VDD of operating voltage is loaded into radio-frequency power amplifier by output matching network
On.
In the embodiment one of radio-frequency power amplifier shown in Fig. 3, as radio-frequency input signals RFin is gradually increased, crystal
The drain voltage VD2 of two M2 of pipe is also radio-frequency voltage, and the amplitude of oscillation is gradually increased.The radio-frequency voltage coupling of the drain electrode of two M2 of transistor
Grid is closed, therefore the radio-frequency voltage amplitude of oscillation that the coupling of the grid of two M2 of transistor comes also is gradually increased.The grid of two M2 of transistor
On the one hand the radio-frequency voltage that pole coupling comes generates radio-frequency current in the grid of two M2 of transistor, on the other hand on one D1 of diode
Generate pulse current.The radio-frequency current of the grid of two M2 of transistor largely passes through one C1 of capacitor and flows to ground.One D1's of diode
Pulse current has DC component and AC compounent, and DC component therein is flowed out by one R1 of resistance.Flow through one R1's of resistance
Electric current also has DC component and AC compounent, the direct current point for the pulse current that one D1 of DC component, that is, diode therein is generated
Amount increases with the increase with radio-frequency input signals RFin.The DC component for flowing through the electric current of one R1 of resistance is exactly with input
The dynamic current of power dynamics, the dynamic current flow through one R1 of resistance and form dynamic electric voltage.Dynamic electric voltage superposition is static
One VB2 of DC voltage, that is, operating voltage just constitutes the dynamic bias voltage of entire biasing circuit output.Therefore, two M2 of transistor
Grid voltage VG2 consist of three parts: first part is quiescent direct current voltage, and second part is dynamic electric voltage above-mentioned,
Three parts are the radio-frequency voltages that the grid of two M2 of transistor comes from drain electrode coupling.
Fig. 3 a is please referred to, this is the distressed structure of the embodiment one of radio-frequency power amplifier provided by the present application.The deformation
One D1 of diode in biasing circuit has mainly been changed to three M3 of transistor by structure.The first mode of texturing (not shown) is:
The grid of three M3 of transistor and drain electrode are shorted, and are equivalent to the anode of diode；The source electrode of three M3 of transistor is equivalent to diode
Cathode.Second of mode of texturing is: the grid of three M3 of transistor meets four VBM3 of operating voltage, and drain electrode connects five VD3 of operating voltage, source
Pole connects the output end of biasing circuit.Dynamic bias voltage provided by biasing circuit also includes static operating voltage one at this time
VB2 and the dynamic electric voltage of the dynamic current generation by one R1 of resistance.The dynamic current refers to the electricity for flowing through one R1 of resistance
The DC component of stream, that is, three M3 of transistor generate pulse current DC component.The grid voltage VG2 of two M2 of transistor
It is then the coupling for increasing by the grid of two M2 of transistor on the basis of the dynamic bias voltage that biasing circuit provides and coming from drain electrode coupling
Close voltage.Three M3 of transistor in both the above mode of texturing works in critical conduction mode, that is, is in cut-off and leads
Logical intermediate state.The grid of three M3 of transistor is separately connected different operating voltages from drain electrode by second of mode of texturing, can
To reduce influence of the drain current to grid voltage.
Referring to Fig. 4, the working principle of the embodiment one of radio-frequency power amplifier provided by the present application is as follows.Radio frequency input
Input of the signal RFin as power stage amplifying circuit enters from the grid of one M1 of transistor.The output of power stage amplifying circuit
It is exactly the drain voltage VD2 of two M2 of transistor, drain voltage VD2 is coupled to transistor by the grid capacitance of two M2 of transistor
The grid of two M2.When not having radio-frequency input signals RFin, the drain voltage VD2 of two M2 of transistor does not just have radiofrequency signal yet,
Also there will be no the grids that radiofrequency signal is coupled to two M2 of transistor, and the grid voltage VG2 of two M2 of transistor makes diode at this time
One D1 or three M3 of transistor is the state of critical conduction.When there is radio-frequency input signals RFin, the drain voltage of two M2 of transistor
VD2 also has radiofrequency signal, and radiofrequency signal will be coupled to the grid of two M2 of transistor by the grid capacitance of two M2 of transistor.In
The wave trough position of the coupled voltages of the grid of two M2 of transistor, grid voltage VG2 (the i.e. yin of one D1 of diode of two M2 of transistor
The source voltage of three M3 of pole tension or transistor) become smaller, therefore one D1 of diode or three M3 of transistor conducting.In two M2 of transistor
Grid coupled voltages crest location, the grid voltage VG2 of two M2 of transistor becomes larger, therefore one D1 of diode or transistor
Three M3 cut-off.Therefore when there is radio-frequency input signals RFin, when one D1 of diode or three M3 of transistor in biasing circuit are in
And the state ended when being connected.When one D1 of diode or three M3 of transistor is connected, one D1 of diode or transistor three are flowed through
The DC component of the electric current of M3 is flowed out by one R1 of resistance.The DC component of the electric current of one R1 of resistance is flowed through due to following input work
Rate changes and changes, because of referred to herein as dynamic current.The dynamic current forms dynamic electric voltage in one R1 of resistance.Dynamic electric voltage superposition
One VB2 of operating voltage is the dynamic bias voltage for the grid that biasing circuit is supplied to two M2 of transistor.In general, radio frequency is defeated
The power for entering signal RFin is bigger, and the voltage swing of the drain voltage VD2 of two M2 of transistor is also bigger, is coupled to transistor two
The amplitude of oscillation of the coupled voltages of the grid of M2 is also bigger, is also got over by the average current of three M3 of one D1 of diode or transistor
Greatly, the average value of the grid voltage VG2 of two M2 of transistor is also bigger.
As the power of radio-frequency input signals RFin increases, the drain electrode output electric current of one M1 of transistor is also increased with it.It is brilliant
Two M2 of body pipe is in order to guarantee to export bigger drain current, and overdrive voltage (overdrive voltage) increases, therefore crystal
One VD1 of drain voltage of one M1 of pipe is gradually reduced.One VD1 of drain voltage of one M1 of transistor reduces, and is equivalent to one M1 of transistor
Supply voltage reduce, therefore will lead to one M1 of transistor drain electrode output electric current the amplitude of oscillation reduce, this results in transistor one
There is gain compression in M1.
It is equally as the power of radio-frequency input signals RFin continues to increase, the grid voltage VG2's of two M2 of transistor is flat
Mean value increases with it, and the conducting resistance of two M2 of transistor is made to become smaller, and then the conduction voltage drop of two M2 of transistor is made to become smaller, thus
As soon as so that one M1 of transistor drain voltage VD1 postpone decline, also delayed the gain compression area of one M1 of transistor, i.e., so that
The corresponding output power of the 1dB compression point of one M1 of transistor increases.This also increases the linearities of power amplifier.
The embodiment one of radio-frequency power amplifier shown in Fig. 3 can also improve amplitude modulation-phase modulation (AM-PM) to a certain extent
Performance realizes gain extension, further increases the corresponding output power value of 1dB compression point.Firstly, one C1 of capacitor and transistor two
The grid capacitance of M2 constitutes the capacitive branch for being connected in series to ground, one R1 isolated working voltage of resistance one VB2 and two M2 of transistor
Between radiofrequency signal.Wherein, the grid capacitance of two M2 of transistor is nonlinear capacitance, always equivalent with connecting for one C1 of capacitor
Capacitor is also nonlinear capacitance.But the non-linear grid capacitance less than two M2 of transistor for total capacitance of connecting is non-linear, and
As soon as capacitor C1 is smaller, the linearity for total capacitance of connecting is smaller, and the amplitude modulation being induced by it-phase modulation distortion is just smaller.Secondly, capacitor
The partial pressure effect of one C1 reduces the radio frequency gate source voltage of two M2 of transistor, thus two M2 of transistor in small signal from transistor
Two M2 source electrodes make the source electrode under the small signal of two M2 of transistor to the voltage gain of drain to the gain reduction of two M2 drain of transistor
Gain when close to big signal, improve two M2 source electrode of transistor to drain voltage gain the linearity.Radio-frequency power amplification
It is Linear Amplifer that device, which is input to output, therefore the linearity of gain of one M1 grid of transistor to drain also improves.Transistor one
To drain there are Miller capacitance, the linearity of this Miller capacitance also improves and improves because of the linearity of gain the grid of M1,
And then reduce amplitude modulation-phase modulation distortion of radio-frequency power amplifier.Again, the grid capacitance partial pressure of two M2 of one C1 of capacitor and transistor
The grid voltage VG2 of two M2 of transistor is formed, it is dynamic that grid voltage VG2 drives one D1 of diode or three M3 of transistor to generate
Diode current or source transistor leakage current.One R1 of resistance also provides static one VB2 of operating voltage, and makes diode one electric
Stream or three source-drain current of transistor generate pressure drop, the superimposed dynamic bias voltage for just generating two M2 of transistor of the two.Transistor
The grid voltage VG2 of two M2 is divided into three parts: first is that the static bias voltage from one VB2 of operating voltage, second is that flowing through resistance
The pressure drop that the dynamic current of one R1 generates on one R1 of resistance, this part be dynamic bias voltage only calculate due to diode one or
The average voltage variation that three monocycle of transistor average current dynamic change generates, third is that the drain electrode by two M2 of transistor couples
To the RF coupling voltage of grid.
Fig. 5 a is please referred to, this is the grid of two M2 of transistor in the embodiment one of radio-frequency power amplifier provided by the present application
The average value of voltage VG2 and the curve synoptic diagram of output power.Feelings when dotted line therein is indicated using traditional biasing circuit
Condition, traditional biasing circuit provide substantially invariable bias voltage, are not coupled to crystalline substance by the output signal of power stage amplifying circuit
The influence of the coupled voltages of body pipe M2 grid.Solid line indicate use the application biasing circuit when the case where, as radio frequency inputs
The power of signal RFin increases, and the amplitude of oscillation of the output signal of power stage amplifying circuit also increases, and is coupled to transistor M2 grid
The amplitude of oscillation of coupled voltages also increases, and the average current of one D1 of diode or three M3 of transistor in conducting also increases, one R1 of resistance
Average current and then increase so that the average value of the grid voltage VG2 of two M2 of transistor also increases.
Fig. 5 b is please referred to, this is gain and output power in the embodiment one of radio-frequency power amplifier provided by the present application
Curve synoptic diagram.Gain when dotted line therein is indicated using traditional biasing circuit, it is similar with the curve B in Fig. 1.Solid line table
Show the gain when biasing circuit using the application, it is clear that so that the corresponding output power of 1dB compression point becomes larger, that is, delay
1dB compression point also just improves maximum linear output power.One M1 of transistor works in AB quasi-mode, it is also possible to be in Fig. 1
Curve A there is no gain extension area like that, the application can equally make the corresponding output power of 1dB compression point become larger at this time.
Referring to Fig. 6, this is the embodiment two of radio-frequency power amplifier provided by the present application.Embodiment two and embodiment one
Compare, difference be only power stage amplifying circuit has been changed to three-level cascode structure by second level cascode structure, that is,
Four M4 of transistor of a common gate connection is reconnected in the drain electrode of two M2 of transistor.Three VDD of operating voltage can be improved in this way
And then output power is improved, four M4 of transistor newly increased mainly shares voltage swing as two M2 of transistor.It is newly-increased
The biasing circuit two of four M4 of transistor setting can be identical as biasing circuit one, also can be omitted diode and only comprising resistance
Capacitor.Based on the same principle, power stage amplifying circuit can also be changed to more stages cascode structure, the common gate connection newly increased
Transistor be more suitable for using the biasing circuit for omitting diode or transistor.
Referring to Fig. 7, this is the embodiment three of radio-frequency power amplifier provided by the present application.Embodiment three and embodiment one
Compare, difference be only between biasing circuit and power stage amplifying circuit, and/or power stage amplifying circuit and match circuit it
Between increase a LC series resonance branch.Every LC series resonance branch routes a tunable capacitor VC1 (or VC2) and an electricity
Sense L1 (or L2) is composed in series, and is grounded.It, can be by LC series resonance branch by adjusting the capacitance of tunable capacitor VC1, VC2
Resonance frequency be set as radio-frequency power amplifier working frequency order harmonic frequencies, such as it is second harmonic frequency, humorous three times
Wave frequency rate, to play the role of inhibiting harmonic wave.
Referring to Fig. 8, this is the example IV of radio-frequency power amplifier provided by the present application.Example IV and embodiment one
It compares, difference is only that power stage amplifying circuit has been changed to differential configuration.Differential configuration is conducive to inhibit the generation of even-order harmonic
With the differential signal for reducing common-mode node.
The technical characteristic of above each embodiment can be combined with each other.Such as by the LC series resonance branch of embodiment three with
The differential configuration power stage amplifying circuit of example IV is combined, and the resonance frequency of two LC series resonance branches is set respectively
For third harmonic frequencies, quintuple harmonics frequency, ideal harmonic suppression effect can be obtained.
The purpose of the application is to provide the radio-frequency power amplifier of a kind of high power, high efficiency and high linearity.Firstly, this
The radio-frequency power amplifier that application provides uses the power stage amplifying circuit of cascode common gate structure, improves operating voltage, because
And improve output power and pressure-resistant performance.Secondly, radio-frequency power amplifier provided by the present application uses adaptive-biased electricity
The corresponding output power value of 1dB compression point has been delayed on road, thus improves the linearity and maximum linear output power.When 1dB is pressed
After the corresponding output power of point reduction improves, identical linear power can be obtained by improving load impedance, to improve effect
Rate.Again, biasing circuit is connected and is turned up the linearity of Miller capacitance by capacitor, reduces the amplitude modulation and phase modulation distortion of amplifier,
Further increase the linearity of amplifier.
The above is only preferred embodiment of the present application, it is not used to limit the application.Come for those skilled in the art
It says, various changes and changes are possible in this application.Within the spirit and principles of this application, made any modification, equivalent
Replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of adaptive-biased radio-frequency power amplifier, characterized in that including biasing circuit and power stage amplifying circuit；
The biasing circuit includes diode one, resistance one and capacitor one, for for the transistor two in power stage amplifying circuit
Dynamic bias voltage is provided；Operating voltage one connects one end of resistance one, output of the other end of resistance one as biasing circuit
End；Operating voltage two connects the anode of diode one, the output end of the cathode connection biasing circuit of diode one；Biasing circuit
Output end also passes through capacitor one and is grounded；The value of operating voltage two makes diode one be defaulted as critical conduction mode；
The power stage amplifying circuit includes transistor one and transistor two, using cascode structure；Transistor one is using altogether
Source electrode connection, grid receive radio-frequency input signals；Transistor two uses common gate connection, drain electrode output drain voltage two.
2. adaptive-biased radio-frequency power amplifier according to claim 1, characterized in that in the biasing circuit
Diode one is changed to transistor three；The grid of transistor three and drain electrode are shorted, and are equivalent to the anode of diode；The source of transistor three
Pole is equivalent to the cathode of diode；
Alternatively, operating voltage four connects the grid of transistor three, operating voltage five connects the drain electrode of transistor three, the source electrode of transistor three
Connect the output end of biasing circuit；
It is critical that the value or operating voltage four of operating voltage two and the value of operating voltage five are defaulted as transistor three
On state.
3. adaptive-biased radio-frequency power amplifier according to claim 1 or 2, characterized in that described adaptive inclined
Set and refer to: as the power of radio-frequency input signals increases, the output signal voltage amplitude of oscillation of power stage amplifying circuit is increased with it, coupling
The coupled voltages amplitude of oscillation for closing the grid of transistor two also increases with it；In direct current biasing, diode one or transistor three are
Critical conduction mode；After the cathode of diode one or the source electrode of transistor three are superimposed coupled voltages, diode one or transistor
Three when switching to and the when of conducting and the state ended, the DC component of electric current when diode one or transistor three are connected flow through resistance
One, flow through resistance once electric current DC component on resistance one pressure drop superposition operating voltage one constitute biasing circuit institute
The dynamic bias voltage of offer；Current average when diode one or transistor three are connected increases as input power increases
Greatly, the average value of the dynamic bias voltage increases with it.
4. adaptive-biased radio-frequency power amplifier according to claim 3, characterized in that with radio-frequency input signals
Power continue to increase, conducting resistance and the conduction voltage drop of transistor two become smaller, so that the drain voltage of transistor one
As soon as delay decline, has also delayed the gain compression of transistor one.
5. adaptive-biased radio-frequency power amplifier according to claim 1 or 2, characterized in that capacitor one and crystal
Pipe two constitutes the capacitive branch for being connected in series to ground, and the grid non-linear capacitor that this capacitive branch reduces transistor two introduces
Phase distortion.
6. adaptive-biased radio-frequency power amplifier according to claim 1 or 2, characterized in that in direct current biasing electricity
Under pressure effect, transistor one and the equal quiescent biasing of transistor two are in plus and blowup state；The plus and blowup state is to field
Refer to saturation region for effect transistor, linear zone is referred to for bipolar junction transistor.
7. adaptive-biased radio-frequency power amplifier according to claim 1 or 2, characterized in that the power stage is put
Big circuit has been changed to the multistage cascode structure of three-level or more, that is, reconnects one or more in the drain electrode of transistor two
The transistor of common gate connection omits diode or transistor in the biasing circuit of the transistor of the common gate connection newly increased.
8. adaptive-biased radio-frequency power amplifier according to claim 1 or 2, characterized in that biasing circuit with
LC series resonance branch is increased between power stage amplifying circuit, and/or between power stage amplifying circuit and match circuit；Institute
State the drain electrode of the transistor two in match circuit connection power stage amplifying circuit；Every LC series resonance branch route a capacitor and
One inductance is composed in series, and is grounded.
9. adaptive-biased radio-frequency power amplifier according to claim 1, characterized in that the power stage amplification electricity
Road is changed to differential configuration.
10. adaptive-biased radio-frequency power amplifier according to claim 1 or 2, characterized in that the transistor is adopted
With one of field-effect tube, bipolar transistor or a variety of.
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| CN201611020276.1A CN106571780B (en) | 2016-11-17 | 2016-11-17 | A kind of adaptive-biased radio-frequency power amplifier |
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| CN201611020276.1A CN106571780B (en) | 2016-11-17 | 2016-11-17 | A kind of adaptive-biased radio-frequency power amplifier |
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