CN116449306B - Transmit-receive circuit for realizing high-speed switching - Google Patents

Transmit-receive circuit for realizing high-speed switching Download PDF

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Publication number
CN116449306B
CN116449306B CN202310686812.5A CN202310686812A CN116449306B CN 116449306 B CN116449306 B CN 116449306B CN 202310686812 A CN202310686812 A CN 202310686812A CN 116449306 B CN116449306 B CN 116449306B
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transistor
circuit
power supply
grid
modulation
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CN116449306A (en
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杨洲
黄华
陈普锋
全金海
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Zhongke Haigao Chengdu Electronic Technology Co ltd
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Zhongke Haigao Chengdu Electronic Technology Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The application provides a receiving and transmitting circuit for realizing high-speed switching, wherein a grid modulation circuit is arranged on a grid power supply path of an amplifier in the receiving and transmitting circuit, and the grid modulation circuit is provided with a modulation module which can rapidly switch on or off the working voltage of the grid of the amplifier; the transceiver circuit also includes a transistorAnd a drain bias circuit; one end of the grid modulation circuit and the transistorThe other end is connected to an external power supply; transistor with a high-voltage power supplyThe source electrode of the transistor is grounded; transistor with a high-voltage power supplyAnd the other end of the drain bias circuit is connected to a drain power supply. The application solves the problem of longer time for the grid electrode or drain electrode modulation scheme of the conventional amplifier; the high-speed modulation of the amplifier in the phased array radar transceiver circuit is realized, and the switching speed of the phased array radar transceiver circuit is obviously improved; the resolution ratio of the phased array radar for detecting the target is effectively improved; the circuit structure is relatively simple, and the practicability is good.

Description

Transmit-receive circuit for realizing high-speed switching
Technical Field
The application relates to the technical field of radars, in particular to a transceiving circuit for realizing high-speed switching.
Background
The transmitting and receiving circuit in the phased array radar generally adopts a time-sharing system, and when the transmitting and receiving circuit receives signals, the power supply of the transmitting channel amplifier is turned off; when the receiving and transmitting circuit transmits signals, the power supply of the receiving channel amplifier is turned off, so that the isolation between the receiving channel and the transmitting channel is improved; otherwise, loop self-excitation of the transceiver circuit is easily caused, so that the transceiver circuit and even the radar system cannot work normally.
The power supply of the amplifier in the transceiver circuit is turned off, and the drain electrode or the grid electrode of the amplifier needs to be modulated to realize the on and off of the working voltage of the drain electrode or the grid electrode of the amplifier. In general, the drain modulation scheme is to introduce a power PMOS modulation switching circuit on the drain power supply path, and the gate modulation scheme is to introduce a TTL driving circuit on the gate power supply path. Here, PMOS refers to an n-type substrate and a p-channel, and is a MOS transistor that carries current by the flow of holes. The TTL (Transistor-Logic) driving circuit is a Transistor-Transistor Logic circuit, belongs to a category of digital integrated circuits, is manufactured by adopting bipolar technology, and has the characteristics of high speed, multiple varieties and the like.
At present, a common drain modulation scheme circuit in a transceiver circuit of a phased array radar is shown in figure 1,is the gate power supply of the amplifier during normal operation, < >>Is the drain power supply of the amplifier during normal operation, < >>Is an enabling power supply for controlling the power PMOS transistor; by switching->Voltage to control on and off of the power PMOS transistor, when the power PMOS transistor is turned off>Disconnecting the amplifier, and stopping the amplifier; when the power PMOS transistor is on, +.>The amplifier is connected with the amplifier, and the amplifier starts to work.
A common gate modulation scheme circuit in a transceiver circuit of a phased array radar is shown in figure 2,is the gate power supply of the amplifier during normal operation, < >>Is the drain power supply of the amplifier during normal operation, < >>Is the external power supply of TTL driving circuit, +.>Is a control power supply of the TTL drive circuit; by controlling->Voltage of>Switching between high and low levels when +.>At low level, the amplifier stops working, < >>At a high level, the amplifier starts to operate.
The amplifier topology in a conventional transceiver circuit is shown in fig. 3 and includes transistorsA gate bias circuit and a drain bias circuit; wherein the gate bias circuit is composed of a resistor +.>Inductance->And capacitance->Composition; one end of the grid bias circuit is connected with the transistor>Is connected to the gate connection of the radio frequency signal input terminal->The other end of the grid bias circuit is connected with a grid power supply +.>The method comprises the steps of carrying out a first treatment on the surface of the Drain bias circuit is by inductance->And capacitance->Composition; one end of the drain bias circuit is connected with the transistor>Is connected to the drain of the transistor>Is connected to the drain of the radio frequency signal output terminal->The other end of the drain bias circuit is connected with a drain power supply.
The comprehensive drain modulation scheme circuit, the grid modulation scheme circuit and the amplifier topology circuit can know that the receiving and transmitting switching time of the grid modulation scheme is mainly controlled by a TTL driving circuit and a resistorAnd capacitance->The transmit-receive switching time of the drain modulation scheme is mainly influenced by the power PMOS transistor and the capacitance +.>Is a function of (a) and (b). The time constant τ in the circuit represents the time course constant of the transient reaction, τ in the resistive, capacitive circuit is the product of resistance and capacitance: />. If the capacitance C is uF (microfarad), the resistance R is mΩ (milliohm), and the time constant τ is in seconds. To reduce the time constant τ, one can start with reducing the resistance R or the capacitance C.
The resistor R in the amplifier topology structure in the conventional transceiver circuit is between 100 and 1000 omega, the capacitor is between 1 and 10pF, and the time constant tau is between 100 and 10000 ns. Under certain application scenes of the phased array radar, which require the transceiving switching time to be less than or equal to 40ns, the prior conventional technology cannot meet the requirements.
Disclosure of Invention
In order to realize the high-speed switching of the receiving and transmitting circuits in the phased array radar, the application provides a receiving and transmitting circuit for realizing the high-speed switching.
The application provides a receiving and transmitting circuit for realizing high-speed switching, wherein a grid modulation circuit is arranged on a grid power supply path of an amplifier in the receiving and transmitting circuit; the structure of the transceiver circuit comprises a grid modulation circuit and a transistorAnd a drain bias circuit; the grid modulation circuit comprises a modulation module and a control module, wherein the modulation module is used for rapidly switching on or off the working voltage of the grid of the amplifier; one end of the grid modulation circuit is connected with a transistor +.>Is connected to the gate connection of the radio frequency signal input terminal->The other end of the grid modulation circuit is connected to an external power supply; transistor->The source electrode of the transistor is grounded; transistor->Is connected to one end of the drain bias circuit and is simultaneously connected to the radio frequency signal output terminal +.>The method comprises the steps of carrying out a first treatment on the surface of the The other end of the drain bias circuit is connected to a drain power supply.
Preferably, the gate modulation circuit further comprises a resistorAnd inductance->The method comprises the steps of carrying out a first treatment on the surface of the One end of the modulation module is connected to an external control power supply; the other end of the modulation module is connected with the resistor->One end is connected with the inductor->One end is connected with the resistorThe other end is connected to an external power supply; inductance->The other end is->Is connected to the gate connection of the radio frequency signal input terminal->。
Preferably, the structure of the modulation module in the gate modulation circuit comprises a transistorAnd resistance->The method comprises the steps of carrying out a first treatment on the surface of the In the gate modulation circuit, resistance->One end is connected to an external control power supply, a resistor +.>The other end is->Is connected with the grid electrode; transistor with a high-voltage power supplyThe source of (2) is grounded, transistor->Drain and resistance of->Connection, resistance->The other end is connected to an external power supply;
simultaneous transistorDrain and inductance of (2)>One end is connected; inductance->The other end is->Is connected to the gate connection of the radio frequency signal input terminal->。
Preferably, the structure of the drain bias circuit includes a capacitorAnd inductance->Inductance->One end is +.>Is connected with the drain electrode of the transistor; inductance->The other end is connected with a grid power supply and simultaneously connected with the capacitor>One end is connected; capacitance->The other end is grounded.
Preferably, one end of the gate modulation circuit is additionally provided with a TTL driving circuit, which is used for shortening the switching time of the transceiver circuit.
Preferably, the TTL driving circuit is connected to an external power supplyAnd an external control power supply->The method comprises the steps of carrying out a first treatment on the surface of the Output end and resistance of TTL drive circuit>One end is connected to the resistor->Providing control power +.>Resistance->One end is connected to an external power supply->。
Preferably, the external control power supplySwitching between high/low voltage, the output voltage phase of the TTL drive circuitShould switch between high/low levels.
Preferably, the output voltage of the TTL driving circuit is switched to a low level, and the transistor is cut off; external power supplyIs via a resistor->And inductance->Input to transistor->Is to result in a transistor->Cut-off, the amplifier is turned off at this time;
the output voltage of the TTL driving circuit is switched to high level, and the transistorConducting; transistor->Gate through inductance->And transistor->Grounding, resulting in a transistor +.>And conducting, and turning on the amplifier at the moment.
Preferably, the transistorAn amplification transistor of HEMT or MESFET type is employed.
Preferably, the transistorSwitching transistors of FET type are employed.
In summary, the transceiver circuit for implementing high-speed switching has the following advantages: the gate modulation circuit is arranged on the gate power supply path of the amplifier, and meanwhile, the TTL driving circuit is additionally arranged, so that the on-off of the working voltage of the gate of the amplifier can be quickly switched; the problem that the time for the grid electrode or drain electrode modulation scheme of the conventional amplifier is long is solved;
the response time of the grid modulation circuit of the amplifier can be controlled within 30ns, so that the technical problem which cannot be solved by the prior art is solved under the application scene that the switching time of a receiving and transmitting circuit is less than or equal to 40ns, the technical blank of the industry is filled, and the method has obvious progress;
the high-speed modulation of the amplifier in the phased array radar transceiver circuit is realized, and the switching speed of the phased array radar transceiver circuit is obviously improved; the resolution ratio of the phased array radar for detecting the target is effectively improved; the circuit has simple structural design, convenient realization and good practicability in industrial application.
Drawings
Fig. 1 is a circuit diagram of a common drain modulation scheme in a transceiver circuit.
Fig. 2 is a circuit diagram of a commonly used gate modulation scheme in transceiver circuits.
Fig. 3 is a schematic diagram of a conventional amplifier topology in a transceiver circuit.
Fig. 4 is a schematic diagram of the transceiver circuit of embodiment 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings 1 to 4 and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The application provides a transceiving circuit for realizing high-speed switching, which is characterized in that a grid electrode of an amplifier in the transceiving circuit is modulated, and a grid electrode modulation circuit is arranged on a grid electrode power supply path of the amplifier; the circuit structure comprises a grid modulation circuit and a transistorAnd a drain bias circuit; wherein, one end of the grid modulation circuit is connected with the transistor +.>Is connected to the gate connection of the radio frequency signal input terminal->The other end of the grid modulation circuit is connected to an external power supply; transistor->The source electrode of the transistor is grounded;
transistor with a high-voltage power supplyIs connected to one end of the drain bias circuit and is simultaneously connected to the radio frequency signal output terminal +.>The method comprises the steps of carrying out a first treatment on the surface of the The other end of the drain bias circuit is connected to a drain power supply.
Different from a conventional grid modulation scheme circuit, the grid modulation circuit in the transceiver circuit comprises a modulation module, and the on-off of the working voltage of the grid of the amplifier can be rapidly switched through the modulation module; the gate modulation circuit also includes a resistorAnd inductance->The method comprises the steps of carrying out a first treatment on the surface of the Wherein one end of the modulation module is connected to an external control power supply, and the other end of the modulation module is connected with the resistor +>One end is connected with the inductor->One end is connected; resistance->The other end is connected to an external power supply, inductance +.>Another end and transistorIs connected to the gate connection of the radio frequency signal input terminal->。
The receiving and transmitting circuit for realizing high-speed switching provided by the application realizes the on or off of the working voltage of the gate of the fast switching amplifier by improving the gate bias circuit of the amplifier transistor; the phased array radar transceiver circuit uses an improved grid modulation circuit to solve the problem that the conventional amplifier grid or drain modulation scheme is long in use.
Example 1
Embodiment 1 is a specific implementation of the transceiver circuit for implementing high-speed switching according to the present application, and a specific implementation of the modulation module in the gate modulation circuit is given, and the protection scope of the present application includes, but is not limited to, this specific implementation.
Embodiment 1A transceiver circuit for implementing high-speed switching, a modulation module in a gate modulation circuit includes a transistorAnd resistance->The method comprises the steps of carrying out a first treatment on the surface of the In the gate modulation circuit, resistance->One end is connected to an external control power supply, a resistor +.>Another end and transistorIs connected with the grid electrode; transistor->The source of (2) is grounded, transistor->Drain and resistance of->Connection, resistance->The other end is connected to an external power supply;
simultaneous transistorDrain and inductance of (2)>One end is connected; inductance->The other end is->Is connected to the gate connection of the radio frequency signal input terminal->。
In the transceiver circuit for realizing high-speed switching, the design structure of the drain bias circuit comprises a capacitorAnd inductance->Inductance->One end is +.>Is connected with the drain electrode of the transistor; inductance->The other end is connected with a grid power supply and simultaneously connected with the capacitor>One end is connected; capacitance->The other end is grounded.
The transceiver circuit for realizing high-speed switching in embodiment 1 only modulates the grid of the amplifier, can rapidly switch the on or off of the working voltage of the grid of the amplifier, and remarkably improves the switching speed of the phased array radar transceiver circuit; the circuit has simple structural design, convenient realization and good practicability in industrial application.
Example 2
Embodiment 2 is a specific embodiment of a transceiver circuit for implementing high-speed switching according to the present application, and another specific embodiment of a gate modulation circuit in the transceiver circuit is given, and the protection scope of the present application includes, but is not limited to, this specific embodiment.
The transceiver circuit for implementing high-speed switching in embodiment 2 is based on embodiment 1, and a TTL driving circuit is added at one end of the gate modulation circuit, so that the transceiver switching time of the transceiver circuit is further shortened, the transceiver circuit obtains a higher-speed transceiver switching effect, and the higher requirements on the phased array radar transceiver circuit in practical application are better met.
Embodiment 2A transceiver circuit for high-speed switching, as shown in FIG. 4, a TTL drive circuit is connected to an external power supplyAnd an external control power supply->，/>Providing a power supply voltage for the TTL driving circuit, +.>Providing a control voltage for the TTL driving circuit; resistance +.>One end is connected to the resistor->Providing control power +.>；
ResistorThe other end of (2) is connected with a transistor->Gate of (2), transistor->The source of (2) is grounded, transistor->Drain and resistance of->One end is connected with the resistor->The other end is connected to an external power supply->The method comprises the steps of carrying out a first treatment on the surface of the And, transistor->Drain electrode and inductance of (c)One end is connected; inductance->The other end and the crystalBody tube->Is connected to the gate connection of the radio frequency signal input terminal->；
Transistor with a high-voltage power supplyThe source electrode of the transistor is grounded; transistor->Drain and inductance of (2)>One end is connected with the radio frequency signal output end>The method comprises the steps of carrying out a first treatment on the surface of the Inductance->The other end is +.>One end is connected to the drain power supply at the same time>The method comprises the steps of carrying out a first treatment on the surface of the Capacitance->The other end is connected.
Embodiment 2 the operation principle of the transceiver circuit for realizing high-speed switching is as follows:
external power supplySupply power supply voltage to TTL drive circuit, external control power supply +.>Providing a control voltage to a TTL drive circuit which provides a resistor +.>Outputting a control voltage; when the external control power supply +>When switching between high and low voltages, the output voltage of the TTL drive circuit can correspondingly switch between high and low levels;
when the output voltage of the TTL drive circuit is switched to low level, the transistorCut-off; external power supply->Is via a resistor->And inductance->Later input to transistor->Is to result in a transistor->Cut-off, the amplifier is turned off at this time;
when the output voltage of the TTL driving circuit is switched to a high level, the transistorConducting; transistor->Gate through inductance->And transistor->Grounding, resulting in a transistor +.>And conducting, and turning on the amplifier at the moment.
The transceiver circuit for realizing high-speed switching in embodiment 2 is adopted, a TTL driving circuit is added on the basis of embodiment 1, the switching time of switching on or off the working voltage of the grid electrode of the amplifier is further shortened, and the high-speed modulation of the amplifier in the phased array radar transceiver circuit is realized, so that the phased array radar transceiver circuit obtains higher-speed transceiver switching, and the resolution of the phased array radar detection target is effectively improved.
Example 3
Embodiment 3 is a specific embodiment of a transceiver circuit for implementing high-speed switching of the present application, and a transistor is providedAnd transistor->Including but not limited to a particular implementation.
Embodiment 3A transceiver circuit for high speed switching is a preferred implementation of embodiment 2, in which the transistors areAmplifying transistors of the HEMT or MESFET type and/or transistors in the gate modulation circuit>Switching transistors of FET type are employed.
The MESFET (Metal-Semiconductor Field Effect Transistor) amplifying transistor is a field effect transistor formed by a Schottky barrier grid, has excellent microwave, high-speed, high-power, low-noise and other performances, and has high frequency, low noise, high saturation level and high reliability; the HEMT (High Electron Mobility Transistor) amplifying transistor is a high electron mobility transistor, works by utilizing two-dimensional electron gas with very high mobility, and can work in the fields of ultrahigh frequency (millimeter wave) and ultrahigh speed; the grid electrode of the HEMT amplifying transistor is often a Schottky barrier grid, and can be also regarded as an ultra-high frequency and ultra-high speed MESFET transistor with better performance; the FET (Field Effect Transistor) field effect transistor is conductive by majority carriers, has the advantages of high input resistance, low noise, low power consumption, large dynamic range and the like, is easy to integrate, has low manufacturing cost, has no secondary breakdown phenomenon, and has higher safe working area. In summary, embodiment 3 proposes a transceiver circuit with excellent performances such as high switching frequency, stability and reliability.
As can be seen from fig. 4, the on/off switching time of the amplifier is controlled by the TTL driving circuit and the transistorIs driven by TTL and transistor +.>Is determined in conjunction with the response time of (a); the response time of the common TTL driving circuit is between 15 and 20 ns; resistance->The value is about 1000 omega, transistor +.>The gate-source equivalent capacitance of (2) is about 0.01pF, thereby the transistor is known>The response time of the gate modulation circuit of the amplifier in the embodiment 3 can be controlled within 30ns when the response time is about 10ns, so that the technical problem which cannot be solved by the conventional technology is solved under the application scene that the switching time of the transceiver circuit is less than or equal to 40ns, the technical blank of the industry is filled, and the method has obvious progress.
The foregoing description of the preferred embodiments of the application is not intended to limit the scope of the application in any way, including the abstract and drawings, in which case any feature disclosed in this specification (including abstract and drawings) may be replaced by alternative features serving the same, equivalent purpose, unless expressly stated otherwise. That is, each feature is one example only of a generic series of equivalent or similar features, unless expressly stated otherwise.

Claims (5)

1. A receiving and transmitting circuit for realizing high-speed switching is characterized in that a grid modulation circuit is arranged on a grid power supply path of an amplifier of the receiving and transmitting circuit, and the receiving and transmitting circuit is characterized in that: the structure of the transceiver circuit comprises a grid modulation circuit and a transistor M 2 And a drain bias circuit; the grid modulation circuit comprises a modulation module and a control module, wherein the modulation module is used for rapidly switching on or off the working voltage of the grid of the amplifier; one end of the grid modulation circuit is connected with the transistor M 2 Is connected to the gate connection of the RF signal input terminal IN The other end of the grid modulation circuit is connected to an external power supply; the transistor M 2 The source electrode of the transistor is grounded; the transistor M 2 Is connected to one end of the drain bias circuit and is simultaneously connected to the RF signal output end OUT The method comprises the steps of carrying out a first treatment on the surface of the The other end of the drain bias circuit is connected to a drain power supply;
the structure of the drain bias circuit comprises a capacitor C 3 And inductance L 4 The method comprises the steps of carrying out a first treatment on the surface of the The inductance L 4 One end is connected with the transistor M 2 Is connected with the drain electrode of the transistor; the inductance L 4 The other end is connected with the grid power supply and simultaneously connected with the capacitor C 3 One end is connected; the capacitor C 3 The other end is grounded; the gate modulation circuit also comprises a resistor R 2 And inductance L 3 The method comprises the steps of carrying out a first treatment on the surface of the One end of the modulation module is connected to an external control power supply; the other end of the modulation module is provided with a resistor R 2 One end is connected with the inductor L 3 One end is connected with the resistor R 2 The other end is connected to an external power supply; the inductance L 3 Another end is connected with the transistor M 2 Is connected to the gate connection of the RF signal input terminal IN ；
The structure of the modulation module in the grid modulation circuit comprises a transistor M 3 And resistance R 3 The method comprises the steps of carrying out a first treatment on the surface of the The resistor R 3 One end is connected to an external control power supply, and the resistor R 3 Another end and transistor M 3 Is connected with the grid electrode; the transistor M 3 The source of the transistor M is grounded 3 Drain of (d) and resistor R 2 Connected with the resistor R 2 The other end is connected to an external power supply;
at the same time, the transistor M 3 Drain electrode of (d) and inductance L 3 One end is connected; the inductance L 3 Another end and transistor M 2 Is connected to the gate connection of the RF signal input terminal IN ；
One end of the grid modulation circuit is additionally provided with a TTL driving circuit which is used for reducing the receiving and transmitting switching time of the receiving and transmitting circuit; the TTL drive circuit is connected to an external power supply V E And an external control power supply V C The method comprises the steps of carrying out a first treatment on the surface of the The output end of the TTL driving circuit and the resistor R 3 One end is connected to the resistor R 3 Providing control power V SW The resistance R 2 One end is connected to the external power supply V E 。
2. The transceiver circuit of claim 1, wherein: the external control power supply V c When switching between high and low, the output voltage of the TTL drive circuit correspondingly switches between high and low levels.
3. The transceiver circuit of claim 2, wherein: the output voltage of the TTL driving circuit is switched to a low level, the transistor M 3 Cut-off; the external power supply V E Through resistor R 2 And inductance L 3 Input to transistor M 2 Resulting in the gate of the transistor M 2 Cut-off, the amplifier is turned off;
the output voltage of the TTL driving circuit is switched to a high level, the transistor M 3 Conducting; the transistor M 2 Through the gate of inductance L 3 And transistor M 3 Grounded, resulting in the transistor M 2 And when the power supply is turned on, the amplifier is turned on.
4. A transceiver circuit according to any one of claims 1 to 3, wherein: the transistor M 2 An amplification transistor of HEMT or MESFET type is employed.
5. A transceiver circuit according to any one of claims 1 to 3, wherein: transistor M in the gate modulation circuit 3 Switching transistors of FET type are employed.
CN202310686812.5A 2023-06-12 2023-06-12 Transmit-receive circuit for realizing high-speed switching Active CN116449306B (en)

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