CN111711466A - Three-channel UWB radio frequency front end module - Google Patents
Three-channel UWB radio frequency front end module Download PDFInfo
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- CN111711466A CN111711466A CN202010704206.8A CN202010704206A CN111711466A CN 111711466 A CN111711466 A CN 111711466A CN 202010704206 A CN202010704206 A CN 202010704206A CN 111711466 A CN111711466 A CN 111711466A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
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Abstract
The invention discloses a three-channel UWB radio frequency front-end module, which comprises a low noise amplifier of a receiving channel (RX), a power amplifier of a transmitting channel (TX), a bypass channel which can be selected as the transmitting/receiving channel according to actual needs, a high-speed radio frequency switch and a control circuit, wherein the low noise amplifier of the receiving channel (RX) is connected with the power amplifier of the transmitting channel (TX); the invention can realize miniaturization by fully integrating the receiving and transmitting low noise amplifier on the chip; the introduction of the bypass channel can increase the dynamic range of the system receiving channel; ensuring that the low noise amplifier (power amplifier) is in an off state in the transmit (receive) state and ensuring that both the low noise amplifier and the power amplifier are in an off state in the bypass operation can achieve low power consumption.
Description
Technical Field
The invention relates to the technical field of wireless radio frequency communication, in particular to a three-channel UWB radio frequency front-end module which can be applied to the fields of UWB ranging, communication, positioning and the like.
Background
UWB is known as Ultra Wide Band (UWB). UWB technology is a wireless carrier communication technology using a frequency bandwidth of 1GHz or more. It does not adopt sinusoidal carrier, but uses nanosecond non-sinusoidal wave narrow pulse to transmit data, so the occupied frequency spectrum range is large, although wireless communication is used, the data transmission rate can reach several hundred megabits per second or more. Signals can be transmitted over a very wide bandwidth using UWB technology, which is specified by the Federal Communications Commission (FCC) in the united states as: and the bandwidth of more than 500MHz is occupied in the frequency band of 3.1-10.6 GHz.
In UWB applications, it is necessary to transmit and receive an echo signal, and for example, in UWB positioning and ranging applications, the current UWB chip has both a baseband signal processing capability and a modulated signal output function. The distance measurement and positioning application system is basically a TDD working mode, in order to measure or position a longer distance, an output carrier signal of a UWB chip needs to be amplified by a power amplifier and then transmitted out through an antenna, and a transmitted signal meets a signal reflected by a target, is received by the antenna, is amplified by low noise and then is input into a UWB baseband chip; when the echo signal is strong, the low noise amplifier of the receiving channel may generate signal distortion due to low linearity, and it is desirable that the echo signal is directly received without low noise amplification, i.e. the receiving channel is expected to have a high dynamic range. In order to achieve the above functions, it is conventional to mix and integrate two separate switches, a low noise amplifier and a power amplifier, which results in a large volume of the device, and the power consumption of the device is large because the low noise amplifier and the power amplifier are always in an operating state. And the low-noise amplifier has low linearity, so that the dynamic range of a receiving channel of the system is poor.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention provides a three-channel UWB radio frequency front-end module, which solves the problems of large volume, large power consumption or poor dynamic range of the current UWB system.
The invention is realized by the following technical scheme:
a three-channel UWB radio frequency front-end module comprises a low noise amplifier of a receiving channel RX, a power amplifier of a transmitting channel TX, a bypass channel, a high-speed radio frequency switch and a control circuit;
the high-speed radio frequency switch comprises two groups of single-pole three-throw switches, wherein the first group of single-pole three-throw switches are connected with a transmitting/receiving antenna, a first port of the first group of single-pole three-throw switches is connected with an input port of a low noise amplifier of a receiving channel RX, a second port of the first group of single-pole three-throw switches is connected with a bypass channel, and a third port of the first group of single-pole three-throw switches is connected with an output port of a power amplifier of a transmitting; the second group of single-pole three-throw switches are connected with a baseband circuit, a first port of each second group of single-pole three-throw switches is connected with a low-noise amplifier output port of a receiving channel RX, a second port of each second group of single-pole three-throw switches is connected with a bypass channel, and a third port of each second group of single-pole three-throw switches is connected with an input port of a power amplifier of a transmitting channel TX;
the bypass channel is selected as a transmitting channel or a receiving channel according to actual needs;
the control circuit is respectively connected with the control ports of the first group of single-pole three-throw switches, the second group of single-pole three-throw switches, the low-noise amplifier and the power amplifier.
The invention realizes miniaturization by fully integrating the receiving channel RX and the transmitting channel TX on a chip, introduces the bypass channel to increase the dynamic range of a system, controls two groups of single-pole triple-throw switches by the control circuit to realize the rapid switching among the transmitting channel, the receiving channel and the bypass channel, simultaneously ensures that a low-noise amplifier (power amplifier) is in a closed state in a transmitting (receiving) state, and ensures that the low-noise amplifier and the power amplifier are both in a closed state during bypass operation to realize low power consumption.
Preferably, the control circuit of the present invention controls the operating states of the two sets of single-pole-three-throw switches simultaneously to realize the selection of the channels, and controls the operating states of the power amplifier of the transmit channel TX and the low noise amplifier of the receive channel RX simultaneously to realize the fast switching of the front-end module among the transmit channel, the receive channel and the bypass channel.
Preferably, the low noise amplifier of the receive channel RX of the present invention has a turn-off function, and the low noise amplifier of the receive channel RX is in a turn-off state when the power amplifier or the bypass channel of the transmit channel TX is in operation.
Preferably, the power amplifier of the transmit channel TX of the present invention has a turn-off function, and is in a turn-off state when the low noise amplifier or the bypass channel of the receive channel RX is in operation.
Preferably, the power amplifier of the transmit channel TX and the low noise amplifier of the receive channel RX of the present invention both use gate bias circuits to implement the turn-off function.
The invention has the following advantages and beneficial effects:
1. the invention directly integrates the receiving channel, the transmitting channel and two groups of single-pole three-throw switches on the chip, ensures that the front-end module is quickly switched among the transmitting channel, the receiving channel and the bypass channel by the control of the control circuit, and controls the working states of the receiving channel, the transmitting channel and the bypass channel so as to realize miniaturization and increase the dynamic range of the system.
2. The invention also arranges a switch-off function circuit in the low noise amplifier of the receiving channel and the power amplifier of the transmitting channel, and ensures that the low noise amplifier (power amplifier) is in a switch-off state in a transmitting (receiving) state through the control of the control circuit, and ensures that the low noise amplifier and the power amplifier are both in a switch-off state during bypass operation, thereby realizing low power consumption.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
fig. 1 is a schematic diagram of an rf front end structure according to the present invention.
Fig. 2 is a schematic diagram of a circuit structure of the single-pole-three-throw switch of the present invention.
Fig. 3 is a schematic diagram of the control principle of the present invention.
Fig. 4 is a schematic diagram of the amplifier with gate turn-off function according to the present invention.
Fig. 5 is a graph of the gain of the three channel UWB rf front end module receive channel of the present invention.
Fig. 6 is a gain of the three channel UWB rf front end module transmit channel of the present invention.
Fig. 7 is a graph of the insertion loss of a bypass channel of a three-channel UWB rf front-end module of the present invention.
Detailed Description
Hereinafter, the term "comprising" or "may include" used in various embodiments of the present invention indicates the presence of the invented function, operation or element, and does not limit the addition of one or more functions, operations or elements. Furthermore, as used in various embodiments of the present invention, the terms "comprises," "comprising," "includes," "including," "has," "having" and their derivatives are intended to mean that the specified features, numbers, steps, operations, elements, components, or combinations of the foregoing, are only meant to indicate that a particular feature, number, step, operation, element, component, or combination of the foregoing, and should not be construed as first excluding the existence of, or adding to the possibility of, one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
In various embodiments of the invention, the expression "or" at least one of a or/and B "includes any or all combinations of the words listed simultaneously. For example, the expression "a or B" or "at least one of a or/and B" may include a, may include B, or may include both a and B.
Expressions (such as "first", "second", and the like) used in various embodiments of the present invention may modify various constituent elements in various embodiments, but may not limit the respective constituent elements. For example, the above description does not limit the order and/or importance of the elements described. The foregoing description is for the purpose of distinguishing one element from another. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of various embodiments of the present invention.
It should be noted that: if it is described that one constituent element is "connected" to another constituent element, the first constituent element may be directly connected to the second constituent element, and a third constituent element may be "connected" between the first constituent element and the second constituent element. In contrast, when one constituent element is "directly connected" to another constituent element, it is understood that there is no third constituent element between the first constituent element and the second constituent element.
The terminology used in the various embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the various embodiments of the invention. As used herein, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the present invention belong. The terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning that is consistent with their contextual meaning in the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein in various embodiments of the present invention.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
The embodiment provides a three-channel UWB radio frequency front-end module.
As shown in fig. 1, the three-channel UWB rf front-end module of the present embodiment includes: (FEM, Front-end module). The low-noise amplifier comprises a low-noise amplifier of a receiving channel (RX), a power amplifier of a transmitting channel (TX), a bypass channel which can be selected as the transmitting channel or the receiving channel according to actual needs, a high-speed radio frequency switch and a control circuit.
The high-speed change-over switch is composed of two groups of single-pole three-throw switches, the first group of single-pole three-throw switches is connected with a transmitting (receiving) antenna, a first port of the first group of single-pole three-throw switches is connected with an input port of a low noise amplifier of a receiving channel, a second port of the first group of single-pole three-throw switches is connected with a bypass channel, and a third port of the first group of single-pole three-; the second group of single-pole three-throw switches is connected with a baseband circuit, a first port of the second group of single-pole three-throw switches is connected with an output port of a low noise amplifier of a receiving channel, a second port of the second group of single-pole three-throw switches is connected with a bypass channel, and a third port of the second group of single-pole three-throw switches is connected with an input port of a power.
The control signal output end of the control circuit is respectively connected with each group of single-pole double-throw switch circuits, the low-noise amplifier and the power amplifier.
In the circuit of the single-pole-three-throw switch of this embodiment, as shown in fig. 2, RFin of the single-pole-three-throw switch is a signalThe input terminal RFout1-3 is 3 signal output terminals, when the control circuit outputs a control signal for controlling M01-M03The channel gating of the single-pole three-throw switch can be realized.
As shown in fig. 3, the control circuit controls the switch control circuit and the amplifier turn-off circuit simultaneously, the synchronous control circuit controls the switch to realize the selection of the channel, and the synchronous control circuit is connected to the control circuit of the amplifier simultaneously for the purpose of realizing low power consumption, so as to ensure that the low noise amplifier (power amplifier) of the receiving (transmitting) channel is in a turn-off state when the power amplifier (low noise amplifier) of the transmitting (receiving) channel works; when the bypass channel works, the power amplifier of the transmitting channel and the low-noise amplifier of the receiving channel are both in a turn-off state, so that low power consumption is realized, and the method specifically comprises the following steps:
1) when the three-channel UWB radio frequency front-end circuit works in a receiving mode, the power amplifier of a transmitting channel is ensured to be in a turn-off state;
2) when the three-channel UWB radio frequency front-end circuit works in a transmitting mode, the low-noise amplifier of a receiving channel is ensured to be in a turn-off state;
3) when the three-channel UWB radio frequency front-end circuit works in a bypass state, the power amplifier of the transmitting channel and the low-noise amplifier of the receiving channel are both ensured to be in a turn-off state.
The embodiment provides a module circuit with multiple channels, small volume, low power consumption and fast switching speed for the UWB radio frequency front end.
Example 2
This embodiment further optimizes the power amplifier of the transmission channel TX and the low noise amplifier of the reception channel RX proposed in embodiment 1 above.
The power amplifier of the transmission channel TX and the low noise amplifier of the reception channel RX in this embodiment may be implemented by an amplifier with a gate turn-off function circuit as shown in fig. 4, and the on/off of the amplifier is implemented by controlling the on/off of the gate bias voltage.
As shown in fig. 4, the amplifier of the present embodiment includes a capacitor C1Capacitor C2Capacitor C3Inductor LD1Inductor LD2Inductor L1Inductor L2Inductor L3Inductor LG1Inductor LG2Inductor LS1Inductor LS2Transistor M0Transistor M1And a transistor M2。
Wherein, the signal input end of the amplifier passes through the capacitor C in turn1And an inductance L1And transistor M1Is connected to the gate of the amplifier, and the control voltage V of the amplifier on/offENInput to transistor M0Of the transistor M0Is grounded, transistor M0Drain electrode and inductor L ofG1Is connected to one terminal of a transistor M0And the gate voltage V of the amplifierGConnection, inductance LG1And the other end of (1) and a transistor M1Is connected to the gate of transistor M1Source electrode of (1) through inductor LS1Grounded, transistor M1Drain electrode and inductor L ofD1Is connected to an inductor LD1And the other end of the amplifier and the drain voltage V of the amplifierDDConnection, inductance L2And a terminal of the transistor M1Is connected to the drain of the inductor L2Another terminal of (1) and a capacitor C2Is connected to a capacitor C2And the other end of (1) and a transistor M2Is connected to the gate of, an inductor LG2And a terminal of the transistor M2Is connected to the gate of, an inductor LG2And the other end of the amplifier and the gate voltage V of the amplifierGConnected, transistor M2Source electrode of (1) through inductor LS2Grounded, transistor M2Drain electrode and inductor L ofD2Is connected to an inductor LD2And the other end of the amplifier and the drain voltage V of the amplifierDDConnection, inductance L3And a terminal of the transistor M2Is connected to the drain of the inductor L3Another terminal of (1) and a capacitor C3Is connected to a capacitor C3The other end of the second switch is connected with the signal output end of the amplifier.
When V isENAt high, the bias voltage at the gate of the amplifier is 0V and the amplifier is turned off.
When V isENAt low level, the bias voltage of the amplifier gate is VGThe amplifier is operated.
Example 3
In this embodiment, a performance simulation test is performed on the three-channel UWB rf front-end module proposed in the above embodiment, so as to obtain gain diagrams of the receiving channel and the transmitting channel and an insertion loss diagram of the bypass channel as shown in fig. 5 to 7.
As shown in fig. 5, the gain of the receiving channel RX is greater than 14dB in the 4.5 to 7.5GHz band. At this time, the power amplifier of the transmit channel TX is in an off state, and no current is consumed.
As shown in fig. 6, the gain of the transmit channel TX is greater than 6.5dB in the 4.5 to 7.5GHz band. At this time, the low noise amplifier of the receiving channel RX is in an off state, and no current is consumed;
as shown in fig. 7, the bypass path is less than 2.5dB in the 4.5 to 7.5GHz band. At this time, the power amplifier of the transmission channel TX and the low noise amplifier of the reception channel RX are in an off state, and there is no current consumption.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (5)
1. A three-channel UWB radio frequency front end module is characterized by comprising a low noise amplifier of a receiving channel RX, a power amplifier of a transmitting channel TX, a bypass channel, a high-speed radio frequency switch and a control circuit;
the high-speed radio frequency switch comprises two groups of single-pole three-throw switches, wherein the first group of single-pole three-throw switches are connected with a transmitting/receiving antenna, a first port of the first group of single-pole three-throw switches is connected with an input port of a low noise amplifier of a receiving channel RX, a second port of the first group of single-pole three-throw switches is connected with a bypass channel, and a third port of the first group of single-pole three-throw switches is connected with an output port of a power amplifier of a transmitting; the second group of single-pole three-throw switches are connected with a baseband circuit, a first port of each second group of single-pole three-throw switches is connected with a low-noise amplifier output port of a receiving channel RX, a second port of each second group of single-pole three-throw switches is connected with a bypass channel, and a third port of each second group of single-pole three-throw switches is connected with an input port of a power amplifier of a transmitting channel TX;
the bypass channel is selected as a transmitting channel or a receiving channel according to actual needs;
the control circuit is respectively connected with the control ports of the first group of single-pole three-throw switches, the second group of single-pole three-throw switches, the low-noise amplifier and the power amplifier.
2. The three-channel UWB rf front-end module of claim 1 wherein the control circuit controls the operation of two sets of single-pole-three-throw switches simultaneously to realize the channel selection, and controls the operation of the power amplifier of the TX channel and the low-noise amplifier of the RX channel simultaneously to realize the fast switching of the front-end module among the TX channel, the RX channel and the bypass channel.
3. The three-channel UWB rf front-end module according to claim 2, characterized in that the low noise amplifier of the receiving channel RX has a turn-off function, and the low noise amplifier of the receiving channel RX is in a turn-off state when the power amplifier or the bypass channel of the transmitting channel TX is in operation.
4. The three-channel UWB rf front-end module according to claim 2, characterized in that the power amplifier of the transmit channel TX has a turn-off function, and is in a turn-off state when the low noise amplifier or the bypass channel of the receive channel RX is in operation.
5. The three-channel UWB radio frequency front-end module according to any of claims 1-4, wherein the power amplifier of the transmitting channel TX and the low noise amplifier of the receiving channel RX both use gate bias circuit to realize the switch-off function.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010704206.8A CN111711466A (en) | 2020-07-21 | 2020-07-21 | Three-channel UWB radio frequency front end module |
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| CN202010704206.8A CN111711466A (en) | 2020-07-21 | 2020-07-21 | Three-channel UWB radio frequency front end module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114614772A (en) * | 2022-03-18 | 2022-06-10 | 无锡华睿芯微电子科技有限公司 | Single-power supply pulse control high-frequency bidirectional amplifying circuit |
| EP4057639A1 (en) * | 2021-03-10 | 2022-09-14 | GN Hearing 2 A/S | Hearing device comprising a module |
| CN116449306A (en) * | 2023-06-12 | 2023-07-18 | 中科海高(成都)电子技术有限公司 | Transmit-receive circuit for realizing high-speed switching |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090207764A1 (en) * | 2006-05-08 | 2009-08-20 | Hitachi Metals, Ltd. | High-frequency circuit, high-frequency device and communications apparatus |
| CN101714878A (en) * | 2002-08-30 | 2010-05-26 | 高通股份有限公司 | Power amplifier bypass in a half-duplex ic |
| CN103516379A (en) * | 2012-06-28 | 2014-01-15 | 国基电子（上海）有限公司 | Wireless communication module |
| US20140185502A1 (en) * | 2012-12-29 | 2014-07-03 | Thomas J. Kenney | Methods and arrangements for a low power device in wireless networks |
| US20140256271A1 (en) * | 2013-03-06 | 2014-09-11 | Microchip Technology Incorporated | Reducing Insertion Loss in LNA Bypass Mode by Using a Single-Pole-Triple-Throw Switch in a RF Front End Module |
| CN105680803A (en) * | 2014-12-05 | 2016-06-15 | 英飞凌科技股份有限公司 | System and method for low noise amplifier module |
| CN108270453A (en) * | 2018-04-03 | 2018-07-10 | 杭州臻镭微波技术有限公司 | The RF front end structure that a kind of single antenna is received and dispatched parallel |
| US20180226932A1 (en) * | 2017-02-03 | 2018-08-09 | Qualcomm Incorporated | Radio frequency front end transmit and receive path switch gain |
| US20200169285A1 (en) * | 2018-11-27 | 2020-05-28 | Skyworks Solutions, Inc. | Radio front end module with reduced loss and increased linearity |
| CN212163332U (en) * | 2020-07-21 | 2020-12-15 | 成都智芯测控科技有限公司 | Three-channel UWB radio frequency front end module |
-
2020
- 2020-07-21 CN CN202010704206.8A patent/CN111711466A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101714878A (en) * | 2002-08-30 | 2010-05-26 | 高通股份有限公司 | Power amplifier bypass in a half-duplex ic |
| US20090207764A1 (en) * | 2006-05-08 | 2009-08-20 | Hitachi Metals, Ltd. | High-frequency circuit, high-frequency device and communications apparatus |
| CN103516379A (en) * | 2012-06-28 | 2014-01-15 | 国基电子（上海）有限公司 | Wireless communication module |
| US20140185502A1 (en) * | 2012-12-29 | 2014-07-03 | Thomas J. Kenney | Methods and arrangements for a low power device in wireless networks |
| US20140256271A1 (en) * | 2013-03-06 | 2014-09-11 | Microchip Technology Incorporated | Reducing Insertion Loss in LNA Bypass Mode by Using a Single-Pole-Triple-Throw Switch in a RF Front End Module |
| CN105680803A (en) * | 2014-12-05 | 2016-06-15 | 英飞凌科技股份有限公司 | System and method for low noise amplifier module |
| US20180226932A1 (en) * | 2017-02-03 | 2018-08-09 | Qualcomm Incorporated | Radio frequency front end transmit and receive path switch gain |
| CN108270453A (en) * | 2018-04-03 | 2018-07-10 | 杭州臻镭微波技术有限公司 | The RF front end structure that a kind of single antenna is received and dispatched parallel |
| US20200169285A1 (en) * | 2018-11-27 | 2020-05-28 | Skyworks Solutions, Inc. | Radio front end module with reduced loss and increased linearity |
| CN212163332U (en) * | 2020-07-21 | 2020-12-15 | 成都智芯测控科技有限公司 | Three-channel UWB radio frequency front end module |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4057639A1 (en) * | 2021-03-10 | 2022-09-14 | GN Hearing 2 A/S | Hearing device comprising a module |
| US11937049B2 (en) | 2021-03-10 | 2024-03-19 | GN Hearing 2 A/S | Hearing device comprising a module |
| CN114614772A (en) * | 2022-03-18 | 2022-06-10 | 无锡华睿芯微电子科技有限公司 | Single-power supply pulse control high-frequency bidirectional amplifying circuit |
| CN116449306A (en) * | 2023-06-12 | 2023-07-18 | 中科海高(成都)电子技术有限公司 | Transmit-receive circuit for realizing high-speed switching |
| CN116449306B (en) * | 2023-06-12 | 2023-09-19 | 中科海高(成都)电子技术有限公司 | Transmit-receive circuit for realizing high-speed switching |
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