CN216390996U - 2.4GHz radio frequency switch circuit and radio frequency front end module - Google Patents
2.4GHz radio frequency switch circuit and radio frequency front end module Download PDFInfo
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- CN216390996U CN216390996U CN202122339096.2U CN202122339096U CN216390996U CN 216390996 U CN216390996 U CN 216390996U CN 202122339096 U CN202122339096 U CN 202122339096U CN 216390996 U CN216390996 U CN 216390996U
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Abstract
The utility model discloses a 2.4GHz radio frequency switch circuit, which comprises an input node for receiving radio frequency signals in an antenna, an output node for outputting the radio frequency signals, and a first single-pole single-throw switch unit and a second single-pole single-throw switch unit which are connected in series between the input node and the output node; the first single-pole single-throw switch unit is connected between the input end of the low noise amplifier and the antenna; and the second single-pole single-throw switch unit is connected between the pi-type frequency-selecting filtering module at the output end of the radio-frequency power amplifier and the antenna. The utility model can make the input amplifier tube of a Low Noise Amplifier (LNA) not be broken down by the influence of high-power signals at the antenna end, and fully reduce the insertion loss of the switch so as to improve the signal dynamic range of the radio frequency front-end module chip in a receiving mode.
Description
Technical Field
The utility model relates to the technical field of radio frequency integrated circuits, in particular to a 2.4GHz radio frequency switch circuit and a radio frequency front-end module.
Background
In order to improve the integration level of a radio frequency front-end module in a wireless communication terminal, reduce the implementation cost of the terminal, and save a large amount of radio frequency module debugging time and PCB wiring space in practical application of a module chip, a plurality of modules such as a radio frequency power amplifier, a low noise amplifier, a radio frequency switch, a bias circuit, a filter circuit and the like need to be integrated in a single chip. The radio frequency switch module is indispensable for preventing mutual interference of two processes due to the common antenna for transmitting and receiving, and is used for realizing time division multiplexing of a radio frequency Power Amplifier (PA) and a Low Noise Amplifier (LNA) under two modes of transmitting and receiving of the radio frequency front end module.
Signals transmitted between the input end of a radio frequency Power Amplifier (PA) and a TX/RX port and between the output end of a Low Noise Amplifier (LNA) and the TX/RX port are all low-power signals, and a symmetrical single-pole double-throw switch with a series-parallel mixed structure is generally adopted. A high-power signal is transmitted between the output end of a radio frequency Power Amplifier (PA) and an Antenna (Antenna) port, and a radio frequency switch needs to have good power processing capacity; the weak signal received by the Antenna is transmitted between the input end of the Low Noise Amplifier (LNA) and the port of the Antenna (Antenna), and the radio frequency switch needs smaller insertion loss. Here, if the LNA and PA are connected by a symmetrical single-pole double-throw switch, the above requirements cannot be satisfied at the same time.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects in the prior art, the utility model provides a 2.4GHz radio frequency switch circuit and a radio frequency front-end module, which can ensure that an input amplifier tube of a Low Noise Amplifier (LNA) is not influenced by a high-power signal at an antenna end to be broken down, and sufficiently reduce the insertion loss of a switch, so as to improve the signal dynamic range of a radio frequency front-end module chip in a receiving mode.
In order to achieve the purpose, the utility model adopts the following technical scheme:
in a first aspect, an embodiment of the present invention provides a 2.4GHz radio frequency switch circuit, where the radio frequency switch circuit includes an input node for receiving a radio frequency signal in an antenna, an output node for outputting the radio frequency signal, and a first single-pole single-throw switch unit and a second single-pole single-throw switch unit connected in series between the input node and the output node;
the first single-pole single-throw switch unit is connected between the input end of the low noise amplifier and the antenna; and the second single-pole single-throw switch unit is connected between the pi-type frequency-selecting filtering module at the output end of the radio-frequency power amplifier and the antenna.
Further, the first single-pole single-throw switch unit comprises a switch tube M5, a capacitor C3, a capacitor C4, an inductor L1, a resistor R11 and a resistor R13;
the source electrode of the switch tube M5 is connected to an output node for outputting radio frequency signals through a capacitor C3, the drain electrode is connected to an input node for receiving radio frequency signals in the antenna through a capacitor C4, and an inductor L1 is connected between the source electrode and the drain electrode in series; the substrate of the switch tube M5 is connected in series to the ground through a resistor R11; the base of the switch tube M5 is connected to the control signal RX _ EN of the rf switch through a resistor R13.
Further, the second single-pole single-throw switch unit comprises a switch tube M6, a capacitor C5, a resistor R9, a resistor R10, a resistor R12 and a resistor R14;
the source electrode of the switching tube M6 is directly connected with the pi-type frequency-selecting network, the substrate is connected to the ground through a resistor R12, and the drain electrode is connected to an input node for receiving radio-frequency signals in the antenna through a capacitor C5; a resistor R9 and a resistor R10 are connected between the source and the drain in series; the base of the switch tube M6 is connected to the control signal RX _ EN of the rf switch through a resistor R14.
Further, the switch tube M5 and the switch tube M6 are DNW MOSFETs.
In a second aspect, an embodiment of the present invention provides a radio frequency front end module, where the radio frequency front end module includes a radio frequency power amplifier, a low noise amplifier, a symmetric single-pole double-throw switch module, and the radio frequency switch circuit;
the output end of the low noise amplifier, the symmetrical single-pole double-throw switch module and the input end of the radio frequency power amplifier are sequentially connected.
Further, the rf front-end module further includes a logic control module, and the logic control module is configured to generate control signals RX _ EN and TX _ EN of the rf switch and inverted signals RX _ ENN and TX _ ENN thereof.
The utility model has the beneficial effects that:
the 2.4GHz radio frequency switch circuit and the radio frequency front-end module can ensure that an input amplifier tube of a Low Noise Amplifier (LNA) is not broken down by the influence of a high-power signal at an antenna end, and the insertion loss of the switch is fully reduced, so that the signal dynamic range of a radio frequency front-end module chip in a receiving mode is improved.
Drawings
Fig. 1 is a schematic diagram of an rf front-end module architecture integrated with an rf switch according to an embodiment of the present invention.
Fig. 2 is a schematic circuit diagram of an rf front-end module integrated with an rf switch according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a first single pole single throw switch unit according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a second single pole single throw switch unit according to an embodiment of the present invention.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings.
It should be noted that the terms "upper", "lower", "left", "right", "front", "back", etc. used in the present invention are for clarity of description only, and are not intended to limit the scope of the utility model, and the relative relationship between the terms and the terms is not limited by the scope of the utility model.
Example one
Fig. 2 is a schematic circuit diagram of an rf front-end module integrated with an rf switch according to an embodiment of the present invention. Referring to fig. 2, the rf switching circuit includes an input node for receiving an rf signal in an antenna, an output node for outputting the rf signal, and a first single pole single throw switch unit and a second single pole single throw switch unit connected in series between the input node and the output node.
The first single-pole single-throw switch unit is connected between the input end of the low-noise amplifier and the antenna; the second single-pole single-throw switch unit is connected between the pi-type frequency-selecting filtering module at the output end of the radio-frequency power amplifier and the antenna.
The radio frequency switch circuit consists of the following parts: an input node for receiving radio frequency signals in an antenna, an output node for outputting the radio frequency signals, and two switch units connected in series between the input node and the output node, namely a first single-pole single-throw switch unit and a second single-pole single-throw switch unit, wherein the two switch units are respectively connected with a pi-type frequency selection network at an LNA input end and a PA output end
Referring to fig. 3, the switching unit connected to the input terminal of the LNA is composed of a MOSFET, two resistors, an inductor, and two capacitors. The source of the MOSFET is connected to an output node for outputting radio frequency signals through a capacitor, the drain of the MOSFET is connected to an input node for receiving radio frequency signals in the antenna through a capacitor, and an inductor is connected between the source and the drain in series. Specifically, the first single-pole single-throw switch unit comprises a switch tube M5, a capacitor C3, a capacitor C4, an inductor L1, a resistor R11 and a resistor R13.
The source of the switch tube M5 is connected to the output node for outputting the radio frequency signal through the capacitor C3, the drain is connected to the input node for receiving the radio frequency signal in the antenna through the capacitor C4, and the inductor L1 is connected between the source and the drain in series; the substrate of the switch tube M5 is connected in series to the ground through a resistor R11; the base of the switch tube M5 is connected to the control signal RX _ EN of the rf switch through a resistor R13.
Referring to fig. 4, that is, the switch unit connected to the pi-type frequency-selecting network at the output end of PA consists of a MOSFET, four resistors and a capacitor. The source of the MOSFET is directly connected with the pi-type frequency-selecting network and is connected to GND through a resistor, and the drain of the MOSFET is connected to an input node for receiving radio-frequency signals in the antenna through a capacitor. Specifically, the second single-pole single-throw switch unit comprises a switch tube M6, a capacitor C5, a resistor R9, a resistor R10, a resistor R12 and a resistor R14.
The source electrode of the switching tube M6 is directly connected with the pi-type frequency-selecting network, the substrate is connected to the ground through a resistor R12, and the drain electrode is connected to an input node for receiving radio-frequency signals in the antenna through a capacitor C5; a resistor R9 and a resistor R10 are connected between the source and the drain in series; the base of the switch tube M6 is connected to the control signal RX _ EN of the rf switch through a resistor R14.
For example, the switch M5 and the switch M6 are DNW MOSFETs. Optionally, all the switch tubes in the radio frequency front-end module can be selected from DNW MOSFETs, the gate of each MOSFET is connected in series with a resistor, and the on-off of the gate of each MOSFET is controlled by RX _ EN or TX _ EN, and the substrate of each MOSFET is connected in series to GND through a resistor to eliminate the substrate bias effect.
The control signals RX _ EN and TX _ EN of the radio frequency switch and the inverted signals RX _ ENN and TX _ ENN thereof are generated by the logic control module.
Example two
On the basis of the foregoing radio frequency switch circuit, the present embodiment also provides a radio frequency front end module, where the radio frequency front end module includes a radio frequency power amplifier, a low noise amplifier, a symmetric single-pole double-throw switch module, and the radio frequency switch circuit. The output end of the low noise amplifier, the symmetrical single-pole double-throw switch module and the input end of the radio frequency power amplifier are sequentially connected. Referring to fig. 1, the rf front-end module switches the transmitting mode and the receiving mode of the module chip through RX _ EN and TX _ EN, so that the PA and the LNA realize time division multiplexing in the transmitting and receiving modes.
Referring to fig. 2, a symmetrical single-pole double-throw switch is connected in series between the PA input node, the LNA output node, and the TX/RX node. When the switch is in the receiving mode, M1 is in a conducting state, and the RF signal is from the antenna to the RX end, and at the same time, M4 is also in a conducting state, so that the RF signal coupled from the antenna to the TX end via the coupling capacitor is shorted to ground. Therefore, the existence of the parallel transistors M3 and M4 effectively improves the isolation of the switch. But as a compromise, due to the presence of the parallel tubes M3 and M4, the signal from the TX transmitting end or the RX receiving end is also terminated to ground through the parasitic coupling capacitance of M3 and M4, which in turn sacrifices the insertion loss index to some extent. On the other hand, if a high power signal is passed through TX, its gate coupled to M4 causes M4 to turn on, and similarly, the gate coupled to M1 causes M1 to turn on, which seriously affects the linearity of the switch. Because the signals input by the PA input and the LNA of the radio frequency front-end module circuit provided by the utility model are all low-power signals, the symmetrical single-pole double-throw switch is used here to basically ensure that each index of the radio frequency switch is relatively good.
Referring to fig. 3, when the chip is in the receiving mode, RX _ EN is set to high, the M5 transistor is turned on, the single-pole single-throw switch connected in series between the LNA input node and the antenna node is turned on, and the inductor L1 and the capacitor C3 function as a series resonant frequency-selective network. When the chip enters a transmitting mode, RX _ EN is set to zero, the M5 tube is cut off, the single-pole single-throw switch is cut off, and the LNA stops working.
Referring to fig. 4, when the chip is in a transmitting mode, TX _ EN is set, the M6 transistor is turned on, and the single-pole single-throw switch between the pi-type frequency-selecting network connected in series to the PA output terminal and the antenna node is turned on. Wherein, the M6 tube adopts a parallel structure with 20 multipliers to ensure that it can pass larger current. When the chip enters a receiving mode, the TX _ EN is set to be zero, the M6 tube is cut off, the single-pole single-throw switch is cut off, and the PA stops working.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the utility model may be made by those skilled in the art without departing from the principle of the utility model.
Claims (6)
1. A2.4 GHz radio frequency switch circuit is characterized by comprising an input node for receiving radio frequency signals in an antenna, an output node for outputting the radio frequency signals, and a first single-pole single-throw switch unit and a second single-pole single-throw switch unit which are connected between the input node and the output node in series;
the first single-pole single-throw switch unit is connected between the input end of the low noise amplifier and the antenna; and the second single-pole single-throw switch unit is connected between the pi-type frequency-selecting filtering module at the output end of the radio-frequency power amplifier and the antenna.
2. The 2.4GHz radio frequency switch circuit according to claim 1, characterized in that the first single-pole single-throw switch unit comprises a first switch tube (M5), a first capacitor (C3), a second capacitor (C4), an inductor (L1), a third resistor (R11) and a fifth resistor (R13);
the source electrode of the first switch tube (M5) is connected to an output node for outputting a radio frequency signal through a first capacitor (C3), the drain electrode of the first switch tube is connected to an input node for receiving the radio frequency signal in the antenna through a second capacitor (C4), and an inductor (L1) is connected between the source electrode and the drain electrode in series; the substrate of the first switch tube (M5) is connected to the ground in series through a third resistor (R11); the base of the first switch tube (M5) is connected to the control signal RX _ EN of the radio frequency switch through a fifth resistor (R13).
3. The 2.4GHz radio frequency switch circuit according to claim 2, characterized in that the second single-pole single-throw switch unit comprises a second switch tube (M6), a third capacitor (C5), a first resistor (R9), a second resistor (R10), a fourth resistor (R12) and a sixth resistor (R14);
the source electrode of the second switch tube (M6) is directly connected with the pi-type frequency selection network, the substrate is connected to the ground through a fourth resistor (R12), and the drain electrode is connected to an input node for receiving radio-frequency signals in the antenna through a third capacitor (C5); a first resistor (R9) and a second resistor (R10) are connected between the source and the drain in series; the base of the second switch tube (M6) is connected to the control signal RX _ EN of the radio frequency switch through a sixth resistor (R14).
4. The 2.4GHz radio frequency switch circuit according to claim 3, characterized in that the first switch tube (M5) and the second switch tube (M6) are DNW MOSFETs.
5. A radio frequency front end module, wherein the radio frequency front end module comprises a radio frequency power amplifier, a low noise amplifier, a symmetric single pole double throw switch module, and a radio frequency switch circuit as claimed in any one of claims 1-4;
the output end of the low noise amplifier, the symmetrical single-pole double-throw switch module and the input end of the radio frequency power amplifier are sequentially connected.
6. The RF front-end module of claim 5, further comprising a logic control module for generating the control signals RX _ EN, TX _ EN and their inverse signals RX _ ENN, TX _ ENN of the RF switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122339096.2U CN216390996U (en) | 2021-09-26 | 2021-09-26 | 2.4GHz radio frequency switch circuit and radio frequency front end module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122339096.2U CN216390996U (en) | 2021-09-26 | 2021-09-26 | 2.4GHz radio frequency switch circuit and radio frequency front end module |
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| CN216390996U true CN216390996U (en) | 2022-04-26 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116112033A (en) * | 2022-12-29 | 2023-05-12 | 南京惠华电子技术有限公司 | Multifunctional circuit and chip capable of automatically switching between receiving and transmitting |
| CN116707556A (en) * | 2023-08-02 | 2023-09-05 | 深圳飞骧科技股份有限公司 | Module for adjusting transmitting power, radio frequency front end module and wireless transmitting equipment |
| WO2023216785A1 (en) * | 2022-05-10 | 2023-11-16 | 华为技术有限公司 | Radio frequency front-end module, control method therefor, control circuit, and communication device |
-
2021
- 2021-09-26 CN CN202122339096.2U patent/CN216390996U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023216785A1 (en) * | 2022-05-10 | 2023-11-16 | 华为技术有限公司 | Radio frequency front-end module, control method therefor, control circuit, and communication device |
| CN116112033A (en) * | 2022-12-29 | 2023-05-12 | 南京惠华电子技术有限公司 | Multifunctional circuit and chip capable of automatically switching between receiving and transmitting |
| CN116112033B (en) * | 2022-12-29 | 2023-12-26 | 南京惠华电子技术有限公司 | Multifunctional circuit and chip capable of automatically switching between receiving and transmitting |
| CN116707556A (en) * | 2023-08-02 | 2023-09-05 | 深圳飞骧科技股份有限公司 | Module for adjusting transmitting power, radio frequency front end module and wireless transmitting equipment |
| CN116707556B (en) * | 2023-08-02 | 2023-10-10 | 深圳飞骧科技股份有限公司 | Module for adjusting transmitting power, radio frequency front end module and wireless transmitting equipment |
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