CN102655404B - Differential radio frequency switch circuit - Google Patents
Differential radio frequency switch circuit Download PDFInfo
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- CN102655404B CN102655404B CN201110052219.2A CN201110052219A CN102655404B CN 102655404 B CN102655404 B CN 102655404B CN 201110052219 A CN201110052219 A CN 201110052219A CN 102655404 B CN102655404 B CN 102655404B
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- nmos tube
- nmos pipe
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- nmos
- interface
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- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Abstract
The invention discloses a differential radio frequency switch circuit which comprises a first NMOS (N-channel Mental-oxide-semiconductor) pipe, a second NMOS pipe, a third NMOS pipe and a fourth NMOS pipe, wherein a drain electrode of the first NMOS pipe is connected with a source electrode of a second NMOS pipe, and a drain electrode of the third NMOS pipe is connected with a source electrode of the fourth NMOS pipe; a grid electrode of the first NMOS pipe is connected with a grid electrode of the third NMOS pipe, and a grid electrode of the second NMOS pipe is connected with a grid electrode of the fourth NMOS pipe; a pinch-off point of the first NMOS pipe, a pinch-off point of the second NMOS pipe, a pinch-off point of the third NMOS pipe and a pinch-off point of the fourth NMOS pipe are all connected with the ground; a source electrode of the first NMOS pipe is connected with an LNA (low-noise amplifier) interface, and a drain electrode of the second NMOS pipe is connected with a PA (power amplifier) interface; and the grid electrode the first NMOS pipe and the grid electrode of the third NMOS pipe are connected with a resistor R1, and the grid electrode of the second NMOS pipe and the grid electrode of the fourth NMOS pipe are connected with a resistor R2. The differential radio frequency switch circuit provided by the invention adopts a full NMOS design, a gate is connected in series with the resistors, the influence of capacitance on each MOS pipe on a radio-frequency signal can be effectively reduced, meanwhile, the series resistors isolates noises, and the integral radio frequency loss of the circuit is within 0.5dB.
Description
Technical field
The invention belongs to electronic circuit technology field, relate to a kind of radio-frequency switch circuit of difference.
Background technology
In wireless or mobile communication system, usually can use radio-frequency (RF) switch (RF switch) carry out radio-frequency channel selection.Such as select to receive and transmission channel by radio-frequency (RF) switch, thus realize reception and the transmission of wireless signal when common antenna; In order to increase interference free performance in military wide band station, radio-frequency (RF) switch is used to select the filter of different frequency range.Generally all require that radio-frequency (RF) switch has alap differential loss and high isolation in such systems.Due to the imperfection of switching device, cause radio-frequency switch circuit to have certain Insertion Loss, isolation is also limited.Be difficult to be issued to high isolation characteristic at filter with low insertion loss.Traditional method uses the parasitic capacitance of inductance resonance swap switch device in parallel in circuit, and isolation can reach more than 40dB, and Insertion Loss is generally at 0.5 ~ 1dB.Similar method also has parallel resistance-capacitance-resistance method.The shortcoming of these two kinds of methods is that working band is narrower.
In addition, also has the radio-frequency switch circuit by the field-effect transistor connecting into multiple grades, as shown in Figure 1, this circuit comprises basic switch part, and it comprises multiple field-effect transistor of being connected in series and is arranged on between the input/output terminal of input and output radiofrequency signal and ground; With multiple resistor element, one end of each resistor element is connected to the drain electrode of the respective fields effect transistor in multiple long effect transistor, and the other end is connected to the source electrode of respective fields effect transistor.In the middle of multiple resistor, the resistance value being connected to the resistor between the source electrode of a field-effect transistor and drain electrode is less than the resistance value of the resistor be connected between the drain electrode of all the other each field-effect transistors and source electrode, and wherein said field-effect transistor is the field-effect transistor being connected to input/output terminal in the middle of multiple field-effect transistor.Although this switching circuit can improve I/O power characteristic on the basis of conventional RF switching circuit, its circuit loss is still at more than 0.5dB.
In addition, also have distributed field effect tube method in parallel, this method is comparatively complicated, needs to carry out particular design to semiconductor switch device.
Summary of the invention
Technical problem to be solved by this invention is: the radio-frequency switch circuit providing a kind of difference, and radio frequency delivery outlet can switch by this switching circuit between PA and LNA interface, and radio frequency loss is within 0.5dB.
For solving the problems of the technologies described above, the present invention adopts following technical scheme.
A radio-frequency switch circuit for difference, comprises the first NMOS tube, the second NMOS tube, the 3rd NMOS tube, the 4th NMOS tube; Wherein, the drain electrode of the first NMOS tube is connected with the source electrode of the second NMOS tube, and the drain electrode of the 3rd NMOS tube is connected with the source electrode of the 4th NMOS tube; The grid of the first NMOS tube is connected with the grid of the 3rd NMOS tube, and the grid of the second NMOS tube is connected with the grid of the 4th NMOS tube; The pinch-off point of the pinch-off point of the first NMOS tube, the pinch-off point of the second NMOS tube, the 3rd NMOS tube and the equal ground connection of pinch-off point of the 4th NMOS tube; The source electrode of the first NMOS tube connects LNA interface; The drain electrode of the second NMOS tube connects PA interface; The source electrode of the 3rd NMOS tube connects LNAB interface; The drain electrode of the 4th NMOS tube connects PAB interface; The drain electrode of the first NMOS tube and the source electrode of the second NMOS tube connect ANT interface; The drain electrode of the 3rd NMOS tube and the source electrode of the 4th NMOS tube connect ANTB interface; The grid connecting resistance R1 of the first NMOS tube and the 3rd NMOS tube, the grid connecting resistance R2 of the second NMOS tube and the 4th NMOS tube.The grid of the first NMOS tube and the 3rd NMOS tube connects the output of the first inverting amplifier by resistance R1, the output of input termination second inverting amplifier of the first inverting amplifier; The grid of the second NMOS tube and the 4th NMOS tube connects the output of the second inverting amplifier by resistance R2, the input termination TR-control interface of the second inverting amplifier.
Beneficial effect of the present invention is: have employed full NMOS and design, gate to connect resistance, effectively can reduce the impact that on metal-oxide-semiconductor, electric capacity radio frequency signal produces, series resistance has isolated noise simultaneously, makes the radio frequency loss of circuit integrity within 0.5dB; In addition, radio frequency delivery outlet can switch by the present invention between PA and LNA interface, facilitates client's pcb board to design.
Description of the invention and application are illustrative, not want by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or substantive characteristics, and the present invention with other forms, structure, layout, ratio, and can realize with other elements, material and parts.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing radio-frequency switch circuit;
Fig. 2 is the structure principle chart of the radio-frequency switch circuit of difference of the present invention.
Primary clustering symbol description:
1, the first NMOS tube; 2, the second NMOS tube;
3, the 3rd NMOS tube; 4, the 4th NMOS tube;
5, the first inverting amplifier; 6, the second inverting amplifier.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Embodiment one
The present embodiment provides a kind of radio-frequency switch circuit of the difference be integrated on chip, and as shown in Figure 2, the radio-frequency switch circuit of this difference is formed primarily of 4 NMOS tube, is respectively the first NMOS tube 1, second NMOS tube 2, the 3rd NMOS tube 3, the 4th NMOS tube 4; Wherein, the drain electrode of the first NMOS tube 1 is connected with the source electrode of the second NMOS tube 2, and the drain electrode of the 3rd NMOS tube 3 is connected with the source electrode of the 4th NMOS tube 4; The grid of the first NMOS tube 1 is connected with the grid of the 3rd NMOS tube 3, and the grid of the second NMOS tube 2 is connected with the grid of the 4th NMOS tube 4; The pinch-off point of the first NMOS tube 1, the pinch-off point of the second NMOS tube 2, the pinch-off point of the 3rd NMOS tube 3 and the equal ground connection of pinch-off point of the 4th NMOS tube 4; The source electrode of the first NMOS tube 1 connects LNA interface; The drain electrode of the second NMOS tube 2 connects PA interface; The source electrode of the 3rd NMOS tube 3 connects LNAB interface; The drain electrode of the 4th NMOS tube 4 connects PAB interface; The drain electrode of the first NMOS tube 1 and the source electrode of the second NMOS tube 2 connect ANT interface; The drain electrode of the 3rd NMOS tube 3 and the source electrode of the 4th NMOS tube 4 connect ANTB interface; The grid of the first NMOS tube 1 and the 3rd NMOS tube 3 connects the output of the first inverting amplifier 5 by resistance R1, the output of input termination second inverting amplifier 6 of the first inverting amplifier 5; The grid of the second NMOS tube 2 and the 4th NMOS tube 4 connects the output of the second inverting amplifier 6 by resistance R2, the input termination TR-control interface of the second inverting amplifier 6.
The radio-frequency switch circuit of difference of the present invention have employed full NMOS and designs, and use resistance being biased as gate, structure is simple, effectively can reduce the impact that on metal-oxide-semiconductor, electric capacity radio frequency signal produces; Radio frequency delivery outlet can be switched between PA and LNA interface, facilitate client's pcb board to design, radio frequency loss is reduced to below 0.5dB simultaneously.
Claims (1)
1. a radio-frequency switch circuit for difference, is characterized in that: comprise the first NMOS tube, the second NMOS tube, the 3rd NMOS tube, the 4th NMOS tube; Wherein, the drain electrode of the first NMOS tube is connected with the source electrode of the second NMOS tube, and the drain electrode of the 3rd NMOS tube is connected with the source electrode of the 4th NMOS tube; The grid of the first NMOS tube is connected with the grid of the 3rd NMOS tube, and the grid of the second NMOS tube is connected with the grid of the 4th NMOS tube; The pinch-off point of the pinch-off point of the first NMOS tube, the pinch-off point of the second NMOS tube, the 3rd NMOS tube and the equal ground connection of pinch-off point of the 4th NMOS tube; The source electrode of the first NMOS tube connects LNA interface; The drain electrode of the second NMOS tube connects PA interface; The source electrode of the 3rd NMOS tube connects LNAB interface; The drain electrode of the 4th NMOS tube connects PAB interface; The drain electrode of the first NMOS tube and the source electrode of the second NMOS tube connect ANT interface; The drain electrode of the 3rd NMOS tube and the source electrode of the 4th NMOS tube connect ANTB interface; The grid connecting resistance R1 of the first NMOS tube and the 3rd NMOS tube, the grid connecting resistance R2 of the second NMOS tube and the 4th NMOS tube; The radio frequency loss of the radio-frequency switch circuit of described difference is low to moderate below 0.5dB;
The grid of the first NMOS tube and the 3rd NMOS tube connects the output of the first inverting amplifier by resistance R1, the output of input termination second inverting amplifier of the first inverting amplifier; The grid of the second NMOS tube and the 4th NMOS tube connects the output of the second inverting amplifier by resistance R2, the input termination TR-control interface of the second inverting amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110052219.2A CN102655404B (en) | 2011-03-04 | 2011-03-04 | Differential radio frequency switch circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110052219.2A CN102655404B (en) | 2011-03-04 | 2011-03-04 | Differential radio frequency switch circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102655404A CN102655404A (en) | 2012-09-05 |
| CN102655404B true CN102655404B (en) | 2015-06-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110052219.2A Active CN102655404B (en) | 2011-03-04 | 2011-03-04 | Differential radio frequency switch circuit |
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| CN (1) | CN102655404B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227629B (en) * | 2013-03-12 | 2016-01-13 | 络达科技股份有限公司 | RF switch device |
| CN105515561A (en) * | 2015-12-01 | 2016-04-20 | 唯捷创芯(天津)电子技术股份有限公司 | Multipath switching circuit, chip and communication terminal |
| CN106911327B (en) * | 2017-02-14 | 2020-01-17 | 上海华虹宏力半导体制造有限公司 | Differential transceiving radio frequency switch and radio frequency terminal |
| CN106888009B (en) * | 2017-02-14 | 2021-03-23 | 上海华虹宏力半导体制造有限公司 | Differential transceiving radio frequency switch and radio frequency terminal |
| CN111224621B (en) * | 2020-01-22 | 2023-07-07 | 重庆芯龙科技有限公司 | Automatic amplitude control oscillating circuit and crystal-free high-precision clock generator |
| CN111490763B (en) * | 2020-06-24 | 2021-03-02 | 浙江铖昌科技股份有限公司 | Power-resistant field-effect tube switch, switch amplitude limiting chip and radio frequency front-end system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201726380U (en) * | 2010-07-16 | 2011-01-26 | 灿瑞半导体(上海)有限公司 | Hall-switch circuit with temperature compensation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008109535A (en) * | 2006-10-27 | 2008-05-08 | Hitachi Media Electoronics Co Ltd | Switch circuit, frontend module having the same, and radio terminal |
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2011
- 2011-03-04 CN CN201110052219.2A patent/CN102655404B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201726380U (en) * | 2010-07-16 | 2011-01-26 | 灿瑞半导体(上海)有限公司 | Hall-switch circuit with temperature compensation |
Non-Patent Citations (1)
| Title |
|---|
| CMOS T/R Switch Design: Towards Ultra-Wideband and Higher Frequency;Qiang Li,etc;《IEEE JOURNAL OF SOLID-STATE CIRCUITS》;20070331;第42卷(第3期);正文第563-570页，图9 * |
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| Publication number | Publication date |
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| CN102655404A (en) | 2012-09-05 |
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Effective date of registration: 20160628 Address after: Building A, No. 18 Jiangsu 214135 Wuxi province cancer Taihu International Science Park Road Zhenze Patentee after: Limited by Share Ltd Jiangsu huge core technology of integrated circuit Address before: Suzhou City, Jiangsu province 215123 Industrial Park Suzhou Xinghu Street No. 328 unit 3-B603 Patentee before: Suzhou Lianke Shengshi Technology Co., Ltd. |
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Correction item: Patentee|Address Correct: Jiangsu Juxin integrated circuit technology Limited by Share Ltd|Building A, No. 18 Jiangsu 214135 Wuxi province cancer Taihu International Science Park Road Zhenze False: Limited by Share Ltd Jiangsu huge core technology of integrated circuit|Building A, No. 18 Jiangsu 214135 Wuxi province cancer Taihu International Science Park Road Zhenze Number: 29 Volume: 32 |
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Effective date of registration: 20181016 Address after: 518101 Guangdong Shenzhen Baoan District Xin'an Street elegant community, Po min road 215, Bao Tong Building 2308 Patentee after: Shenzhen Kuxin integrated circuit technology Co., Ltd. Address before: 214135 A building, cancer 18, Zhen Ze Road, Taihu international science and Technology Park, Wuxi, Jiangsu. Patentee before: Jiangsu Juxin integrated circuit technology Limited by Share Ltd |
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Effective date of registration: 20190507 Address after: 518000 Baotong Building 2307, 215 Baomin Road, Wenya Community, Xin'an Street, Baoan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Xinrui Intelligence Co., Ltd. Address before: 518101 Guangdong Shenzhen Baoan District Xin'an Street elegant community, Po min road 215, Bao Tong Building 2308 Patentee before: Shenzhen Kuxin integrated circuit technology Co., Ltd. |
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Effective date of registration: 20220318 Address after: 214125 1st floor, building C, cancer, Wuxi Software Park, No. 18, Zhenze Road, New District, Wuxi City, Jiangsu Province Patentee after: NST TECHNOLOGY LIMITED Co.,Ltd. Address before: 518000 Baotong Building 2307, 215 Baomin Road, Wenya Community, Xin'an Street, Baoan District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Xinrui Intelligence Co.,Ltd. |
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